JP2010132992A - Apparatus for forming film with sheet plasma - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a technology of further uniformizing the distribution of film thickness in an apparatus for forming a film with a sheet plasma even though the substrate to be film-formed has a steric shape such as a hole and a groove formed on the surface, by enhancing the step coatability for the hole and the groove. <P>SOLUTION: A sheet plasma SP is introduced into a film-forming space between a target electrode 37 and a substrate-supporting electrode 36 which oppose to each other, and the film-forming process is conducted. Then, a magnetic member 46 which is made from a soft magnetic material and is smaller than the target electrode 37 is arranged in the rear side face of the target electrode 37, and is moved within the rear side face by a magnetic-member-moving mechanism 60. Thereby, a convex portion Pc at which a sputtering amount increases is generated in the sheet plasma SP. Accordingly, by moving the convex portion Pc in the film-forming process, the variation of the sputtering amount can be reduced, and the film-thickness distribution, the step coatability and the like can be enhanced. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a sheet plasma film forming apparatus, and in particular, a uniform film thickness distribution and step coverage when a film is formed on a substrate (film forming target) having a three-dimensional shape (grooves, holes, etc.). The present invention relates to a sheet plasma film forming apparatus capable of improving the symmetry of coverage.

  In a sputtering apparatus, a target is disposed in a decompression chamber, and a magnet that forms a magnetic field near the surface of the target is disposed behind the target. When a discharge voltage is applied using the target as one electrode in the presence of the discharge gas, plasma is generated by the occurrence of glow discharge. The plasma is confined by the magnetic field of the magnet, so that a high-density plasma region is formed near the surface of the target, and high-energy ion particles jump out of the high-density plasma region and collide with the surface of the target. By this collision, atoms of the material forming the target are ejected. This phenomenon of atom popping out is sputtering.

  The sputtering apparatus is widely used as a film forming apparatus. When a target for film formation such as a substrate is placed facing the target in the reduced pressure chamber of the sputtering apparatus, and the target is formed of a material to be formed and spatter is generated, the sputtered atoms adhere to the substrate surface, A film is formed.

  The magnetron sputtering film forming apparatus is one of the film forming apparatuses using the sputtering, and a high-density plasma is formed in the vicinity of the back surface of the target by applying a magnetic field orthogonal to the electric field. Can be formed at high speed. Therefore, various applied technologies have been developed in this field. For example, various technologies for moving a magnet that generates a magnetic field during sputtering have been proposed. By moving the magnet in this way, the magnetic field applied to the back surface of the target is made uniform, so that erosion is uniformly generated on the entire surface of the target and the film thickness distribution of the formed film is improved. . As a specific technique, for example, a planar magnetron cathode disclosed in Patent Document 1 can be cited.

  In this technique, in the planar magnetron cathode, at the time of sputtering, the central permanent magnet and the peripheral permanent magnet are moved in two adjacent sides of the planar target in a plane parallel to the planar target. Is done. Thereby, since the surface of the planar target is scanned squarely by the magnetic field lines, the utilization efficiency of the planar target is increased, and the running cost can be reduced. In addition, since one planar target can be used for a long time, the number of target replacements is reduced, the operating rate of the sputtering apparatus is increased, and the cost can be reduced.

  By the way, as another film forming apparatus using the sputtering, a sheet plasma film forming apparatus is known. In a sheet plasma film forming apparatus, cylindrical plasma is sandwiched between a pair of permanent magnets that generate a strong repulsive magnetic field with the same magnetic poles (for example, N poles) facing each other. The sheet-like plasma (sheet plasma) formed thereby is uniform and high density. The sheet plasma film forming apparatus introduces such a sheet plasma into a film forming chamber between the target and the substrate, and forms a film of the target material on the substrate by sputtering using ions in the sheet plasma. Thereby, a film having a large area can be formed at high speed. As a specific technique, for example, a sheet plasma film forming apparatus disclosed in Patent Document 2 is cited.

In this technique, a sheet plasma film forming apparatus is provided with a pair of second magnetic field generating means arranged so as to face each other with opposite polarities and sandwich the film forming space. While moving in the film formation space, the second magnetic field generating means is biased in a convex shape from the main surface by the pair of magnetic fields. According to this configuration, since the sheet-like plasma is curved from the main surface, the atoms of the target knocked out by the charged particles in the sheet-like plasma can reach the wiring groove in a more desirable direction. As a result, the film characteristics of the wiring film formed in the wiring groove on the substrate can be improved.
Japanese Patent No. 3766703 JP 2007-154265 A

  In the sheet plasma film forming apparatus, various techniques as disclosed in Patent Document 2 have been proposed in order to improve the quality of a film to be formed, and there are significant effects as disclosed in the same document. There are many techniques available. However, according to the study by the present inventors, it has been clarified that there is a new problem in the sheet plasma film forming apparatus. This new problem will be described with reference to FIGS. 5 (a) and 5 (b). FIG. 5A is a schematic diagram showing a state of sheet plasma in a film forming chamber of a general sheet plasma film forming apparatus, and FIG. 5B is a diagram illustrating the film forming chamber shown in FIG. It is a schematic diagram explaining the state where the atoms sputtered on the target surface reach the substrate surface when holes are formed on the substrate surface.

  In the conventional sheet plasma film forming apparatus, electromagnetic coils are respectively provided on the inlet side and the outlet side of the sheet plasma in the film forming chamber. These electromagnetic coils form a weak magnetic field for sheet plasma shaping. Therefore, the magnetic fields at the entrance side and the exit side of the film formation chamber are stronger than the magnetic field at the center of the film formation chamber. Note that the inlet side of the film forming chamber is the upstream side in the plasma traveling direction, and the outlet side is the downstream side.

  As shown in FIG. 5A, in the film formation chamber, a substrate 151 and a target 152 to be formed are supported by a substrate support electrode 136 and a target electrode 137, respectively, facing each other, and the sheet plasma SP is generated therebetween. To position. Therefore, the thickness of the sheet plasma SP is relatively small in the peripheral portion of the target 152 corresponding to the upstream side and the downstream side. On the other hand, since the shaping magnetic field is not sufficiently strong in the central portion of the target 152, the thickness of the sheet plasma SP is larger than that on the upstream side and the downstream side. The substrate 151 is supported by the substrate support electrode 136, and the target 152 is supported by the target electrode 137.

Here, the amount of sputtering on the target surface depends not only on the density of the plasma facing the target surface but also on the distance from the target surface to the plasma. Therefore, as shown in FIG. 5B, if the distance D ₀ between the sheet plasma SP and the surface of the target 152 in the peripheral portion is used as a reference, the distance D between the sheet plasma SP and the surface of the target 152 in the central portion. ₁ is smaller than the distance D ₀ . In FIG. 5B, the description of the target electrode 137 and the substrate support electrode 136 shown in FIG.

  When the sputtering process is performed in this correspondence, the amount of spatter increases in the central portion of the target 152 and the degree of erosion increases, but the amount of spatter decreases relatively in the peripheral portion of the target 152 and the degree of erosion. Decreases. As a result, the amount of sputtering is not uniform over the entire target surface.

  Furthermore, as shown in FIG. 5B, since the atoms (exactly ion particles) sputtered on the surface of the target 152 are ejected at various angles, the ion particles generated by passing through the sheet plasma. Reaches the surface of the substrate 151 at various incident angles. In the central region of the surface of the substrate 151, ion particles are incident from the entire surface of the target 152 (arrow in the figure), but in the peripheral region of the surface of the substrate 151, the incident ion particles are in the peripheral portion of the opposing target 152. Only the surface and the surface of the part close to the peripheral part. Therefore, the peripheral area of the substrate 51 has a smaller incident amount of ion particles in the first place than the central area.

  As described above, if the amount of sputtering is uneven on the surface of the target 152 or if the amount of ion particles incident on the surface of the substrate 151 is different, the distribution of the film thickness of the formed film is not uniform. Arise. However, if the surface of the substrate 151 is flat, such non-uniformity of the film thickness hardly causes a problem. However, in particular, if a three-dimensional shape such as a groove or a hole is formed on the surface of the substrate 151, the non-uniformity of the film thickness becomes remarkable in the three-dimensional portion.

  In other words, since the grooves and the holes are steps with respect to the surface, this step prevents the arrival of some ion particles. Therefore, as shown in FIG. 5B, if a hole 153a is formed in the central region of the substrate 151 and holes 153b (right side in the drawing) and 153c (left side in the drawing) are formed in the peripheral region, Compared with the hole 153a in the central region, in the holes 153b and 153c in the peripheral region, the ion particles are less likely to reach the portion that becomes the “shadow” of the step as viewed from the traveling direction of the ion particles (arrow in the figure). As a result, in the hole 153b in the peripheral region, the thickness of the film 154 decreases near the center inside the hole 153b, and when viewed in a cross section, the film thickness becomes uneven from the peripheral side toward the central side. . The same applies to the hole 153c.

  In the technique disclosed in Patent Document 2, the position of the sheet plasma is bent toward the target side by inclining the electromagnetic coil. Therefore, it becomes easier for target ion particles to reach the wiring groove, and the quality of the film can be improved. However, if the three-dimensional shape formed on the substrate surface is a more complicated shape, there is a possibility that it cannot be sufficiently handled.

  On the other hand, the technique disclosed in Patent Document 1 is a technique related to a magnetron sputtering film forming apparatus, and this technique cannot be applied to a sheet plasma film forming apparatus. In other words, since the plasma forming method is different between the magnetron sputtering film forming apparatus and the sheet plasma film forming apparatus, a method of moving the means for generating a magnetic field cannot be adopted in order to uniformly generate erosion.

  In order to increase the amount of sputtering in the peripheral portion of the target, it is conceivable to adjust the magnetic field so as to increase the plasma density in the region corresponding to the target peripheral portion of the sheet plasma. However, from the viewpoint of the configuration of the sheet plasma film forming apparatus, it is difficult to adjust the magnetic field itself. This is because in the sheet plasma film forming apparatus, the space from the pair of permanent magnets that deforms columnar plasma into a sheet shape to the anode is magnetically transported while maintaining the shape of the sheet plasma by a weak magnetic field. It is. Therefore, for example, as disclosed in Patent Document 1, when a strong magnetic field such as a permanent magnet is applied, the surrounding weak magnetic field is affected, so that the plasma density distribution and the plasma shape are also affected.

  The present invention has been made to solve such problems, and in a sheet plasma film forming apparatus, a substrate to be formed has a three-dimensional shape such as a hole or a groove formed on the surface thereof. Even so, it is an object of the present invention to provide a technique for improving the step coverage in these holes and grooves and making the film thickness distribution more uniform.

  In order to solve the above problems, a sheet plasma film forming apparatus according to the present invention includes a target electrode that fixes a target on the front side, a substrate support electrode that supports a substrate to be formed on the front side, and the target A film forming chamber in which the electrode and the substrate support electrode are provided with the front side surfaces facing each other, and columnar plasma is generated, and the columnar plasma is formed into a sheet-like plasma (hereinafter referred to as sheet plasma) by a magnetic field of a permanent magnet pair. And a sheet plasma forming mechanism that moves the sheet plasma to the anode through the space between the target electrode and the substrate support electrode of the film forming chamber, and is made of at least a soft magnetic material, and the target electrode A magnetic member having a smaller area than the target electrode and disposed on the back side of the target electrode, and the magnetic member And a magnetic member moving mechanism for moving in the back plane of, and a a configuration.

  According to the said structure, a convex deformation | transformation site | part (convex site | part) arises in a sheet plasma by arrange | positioning the magnetic member which consists of a soft-magnetic material to the back side surface of a target electrode. In the vicinity where the convex portion is generated, the sputtering amount of the target increases. Moreover, the magnetic member moves in the back side surface by the magnetic member moving mechanism. Therefore, it is possible to perform sputtering while moving a part where the amount of sputtering increases, and it is possible to reduce variations in the amount of sputtering over the entire surface of the target. As a result, the film thickness distribution of the film coated on the substrate can be improved, and even if grooves or holes are formed on the substrate surface, the step coverage and the coverage property can be improved. Further, since a strong magnetic field is not applied from the outside in order to deform the sheet plasma, a weak magnetic field is maintained between the permanent magnet pair that deforms the plasma into a sheet shape and the anode. Therefore, it is possible to avoid affecting the plasma density distribution and the plasma shape of the sheet plasma.

  In the sheet plasma film forming apparatus, the magnetic member moving mechanism is preferably configured to revolve or reciprocate the magnetic member within the back side surface of the target electrode.

  The magnetic member moving mechanism includes a rotation drive source and a magnetic member support that supports the magnetic member on the back side surface, and the magnetic member support is rotated by the rotation drive source, whereby the magnetic member support is rotated. The structure which revolves a member within the said back side surface can be mentioned. Specifically, for example, the magnetic member support can include a support arm that fixes and supports the magnetic member. By rotating the support arm by the rotation drive source, Thus, the magnetic member is revolved.

  Or the structure which the said target electrode serves as the said magnetic member support body, and the said magnetic member is fixed to the said back side surface of the said target electrode can also be mentioned. If the magnetic member moving mechanism has this configuration, the magnetic member is moved with respect to the front side surface of the substrate support electrode within the back side surface of the target electrode by rotating the target electrode by the rotation drive source. Will revolve relatively.

  In the sheet plasma film forming apparatus, the soft magnetic material preferably has a magnetic permeability of 1000 H / m or more.

  As described above, according to the present invention, even when a three-dimensional shape such as a hole or a groove is formed on the surface of the substrate that is the film formation target, the step coverage in the hole or groove is improved, and the film thickness distribution is improved. There is an effect that a sheet plasma film forming apparatus can be obtained that makes the thickness more uniform.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. In the following description, the same or corresponding elements are denoted by the same reference symbols throughout the drawings, and redundant description thereof is omitted.

(Embodiment)
[Overall configuration of sheet plasma deposition system]
First, the configuration of the sheet plasma film forming apparatus according to the present embodiment will be described with reference to FIG. FIG. 1 is a schematic diagram showing a schematic configuration of a sheet plasma film forming apparatus according to an embodiment of the present invention.

  As shown in FIG. 1, the sheet plasma film forming apparatus includes a plasma gun 10, a sheet plasma forming chamber 20, and a film forming chamber 30. The plasma gun 10, the sheet plasma forming chamber 20, and the film forming chamber 30 are arranged in this order along the direction (predetermined direction) from the cathode K to the anode A, and are hermetically connected to each other. The predetermined direction corresponds to the plasma transport direction, and the cathode K side is upstream and the anode A side is downstream.

  The plasma gun 10 includes a cylindrical first tube member 11 and a flange 12 that closes one end thereof. The flange 12 forms an inner wall surface at one end of the plasma gun 10, and a cathode K is provided so as to protrude from the inner wall surface of the flange 12. The other end of the plasma gun 10 is connected to one end of the sheet plasma forming chamber 20, and the other end of the sheet plasma forming chamber 20 is connected to one end of the film forming chamber 30 via a bottle neck portion 41. A plasma passage passage 42 is connected to the other end of the film forming chamber 30, and an anode A is provided at the end of the passage 42. The plasma gun 10, the sheet plasma forming chamber 20, the film forming chamber 30, and the passage 42 connected to the anode A are in airtight communication. Therefore, the plasma gun 10, the sheet plasma forming chamber 20, and the film forming chamber 30 constitute one airtight container (airtight container) 40. The inside of the airtight container 40 can be depressurized as will be described later.

[Plasma gun]
The plasma gun 10 includes a cathode portion 13, a first intermediate electrode 14, and a second intermediate electrode 15 in addition to the first cylinder member 11 and the flange 12, and the cathode K is included in the cathode portion 13. The first cylinder member 11 is a main body of the plasma gun 10 and the inside thereof is a discharge space. As described above, the flange 12 is disposed at one end of the first cylindrical member 11 so as to close the discharge space. A cathode portion 13 is attached to the flange 12 so as to penetrate the center portion of the flange 12. The cathode portion 13 has a length in a one-dimensional direction, penetrates through the center portion of the flange 12 and maintains the inner surface of the flange 12 so as to maintain airtightness inside the plasma gun 10 (inside the first cylindrical member 11). It arrange | positions so that it may extend | stretch toward the said predetermined direction from (the inner wall surface of the plasma gun 10).

Although not shown in detail in FIG. 1, the cathode portion 13 includes a cylindrical auxiliary cathode and an annular main cathode, and a cylindrical protective member and a window member for protecting them. The auxiliary cathode is made of, for example, tantalum (Ta), and one end portion (rear end) thereof is fixed to the flange 12 so as to maintain airtightness, and is connected to an argon (Ar) gas tank (not shown) by piping. Thereby, Ar gas is supplied into the airtight discharge space from the other end (tip) of the auxiliary cathode. The main cathode is disposed (or located) on the outer peripheral surface near the tip of the auxiliary cathode, and is formed of, for example, lanthanum hexaboride (LaB ₆ ). A protective member is disposed on the outer periphery of the auxiliary cathode so as to cover the auxiliary cathode and the main cathode near the tip. The shape of the protective member is a cylindrical shape that is coaxial with the auxiliary cathode and has a larger diameter than the auxiliary cathode. The protective member is made of, for example, molybdenum (Mo) or tungsten (W). The rear end of the protection member is fixed to the flange 12 so as to maintain airtightness, and an annular window member is provided at the front end. The auxiliary cathode and the main cathode constitute a cathode K, and the protective member and the window member constitute a protective container for the cathode K. The cathode K is electrically connected to a main power source composed of a DC power source (not shown).

Each of the first intermediate electrode 14 and the second intermediate electrode 15 has an annular shape, and is arranged in this order along the predetermined direction on the distal end side of the cathode portion 13. The first intermediate electrode 14 and the second intermediate electrode 15 are electrically connected to the main power source, respectively, and a predetermined positive voltage is applied thereto. As a result, arc discharge generated at the cathode K is maintained, and plasma as an aggregate of charged particles (Ar ⁺ and electrons in the present embodiment) is formed in the discharge space. In the present embodiment, the plasma gun 10 includes two intermediate electrodes, the first intermediate electrode 14 and the second intermediate electrode 15, but it is sufficient that at least one intermediate electrode is provided.

  A first coil 43 that forms plasma into a columnar shape is provided around the plasma plasma chamber 10 on the side of the sheet plasma forming chamber 20. The first coil 43 is an annular electromagnetic coil that can control the strength of the magnetic force, and a magnetic field is formed by passing an electric current through the coil. Hereinafter, the magnetic field formed by the coils in this way is referred to as a coil magnetic field. A magnetic flux density gradient is formed in the discharge space of the plasma gun 10 along the predetermined direction by the coil magnetic field and the electric field generated by the first intermediate electrode 14 and the second intermediate electrode 15. The charged particles constituting the plasma travel in the predetermined direction while turning around the lines of magnetic force so as to move in the predetermined direction due to the gradient of the magnetic flux density. As a result, the charged particles are drawn out from the plasma gun 10 to the sheet plasma forming chamber 20 through a passage (not shown) as source plasma CP (hereinafter referred to as columnar plasma) CP in which the charged particles are distributed in a substantially equal density in a cylindrical shape.

[Sheet plasma forming room]
The sheet plasma forming chamber 20 includes a cylindrical second tube member 21 centered on the same axis as the first tube member 11 that is the main body of the plasma gun 10, and the second tube member 21 is formed by sheet plasma forming. It becomes the main body of the chamber 20. The first cylinder member 11 and the second cylinder member 21 are connected while maintaining airtightness. The second cylinder member 21 may be formed of any of a conductive material, a semiconductor material, and an insulating material, but is preferably formed of a conductive metal material in consideration of strength and the like. The inside of the second cylindrical member 21, that is, the inside of the sheet plasma forming chamber 20, becomes a plasma transport space.

  A vacuum pump connection port (not shown) is provided at an appropriate position of the second cylinder member 21. The vacuum pump connection port can be opened and closed by a valve, and a vacuum pump (not shown) (for example, a turbo pump) is connected thereto. By sucking the inside of the sheet plasma forming chamber 20 with this vacuum pump, the inside of the transport space is depressurized to a degree of vacuum that can transport the cylindrical plasma CP.

  Around the sheet plasma forming chamber 20, a second coil 44 is provided on the plasma gun 10 side (that is, the cathode K side), and permanently on the downstream side of the second coil 44 (that is, the film forming chamber 30 side or the anode A side). A magnet pair 45 is provided. The second coil 44 is an annular electromagnetic coil (air-core coil) wound around the second cylindrical member 21, and a current is passed in a direction in which the cathode K side is the S pole and the anode A side is the N pole. Is done. The permanent magnet pair 45 includes a square rod-shaped permanent magnet 45a (upper in the drawing) and a permanent magnet 45b (lower in the drawing), and the same poles are opposed to each other with the second cylindrical member 21 (accurately, a transport space) in between. Are arranged to be. Each permanent magnet 45a, 45b is magnetized in its width direction (direction orthogonal to the longitudinal direction). That is, the permanent magnets 45a and 45b are not magnetized so that the surfaces of both end portions thereof are N-poles and S-poles, but one side of the square bar is N-pole and the other side is S-pole. Has been. Each of the permanent magnets 45a and 45b has a sheet plasma forming chamber 20 (in which the longitudinal direction thereof is the lateral direction of the sheet plasma film forming apparatus (in FIG. 1, the direction perpendicular to the paper surface) and the same-polarity faces each other. Arranged above and below the second cylinder member 21). In the present embodiment, the permanent magnet pair 45 is arranged so that the N pole sides face each other.

  In the sheet plasma forming chamber 20, a coil magnetic field is formed in the transport space by passing an electric current through the second coil 44, and a magnet magnetic field is formed by the permanent magnet pair 45 located on the downstream side of the second coil 44. Due to the interaction of these magnetic fields, the cylindrical plasma CP moves in the predetermined direction, and the cylindrical plasma CP is formed into a uniform sheet-shaped plasma (hereinafter referred to as sheet plasma) SP that spreads in the lateral direction of the sheet plasma film forming apparatus. Is done. The formed sheet plasma SP is drawn out to the film forming chamber 30 through the bottle neck portion 41.

The bottleneck portion 41 is provided between the sheet plasma forming chamber 20 and the film forming chamber 30 and has a slit-shaped passage through which the sheet plasma SP passes. The shape of the slit-shaped passage (that is, the shape of the bottleneck portion 41) may be designed so as to allow the sheet plasma SP to pass through appropriately. By providing the bottleneck portion 41, it is possible that excess argon ions (Ar ⁺ ) and electrons that do not form the sheet plasma SP flow into the film forming chamber 30 inside the sheet plasma film forming chamber 20 (transport space). It can be avoided. Therefore, in the film forming chamber 30, the density of the sheet plasma SP can be kept high.

[Deposition chamber]
The film forming chamber 30 includes a third cylindrical member 31 centering on an axis along the vertical direction of the sheet plasma film forming apparatus, and the third cylindrical member 31 is a main body of the film forming chamber 30. That is, the central axis of the third cylindrical member 31 and the central axes of the first cylindrical member 11 and the second cylindrical member 21 are orthogonal to each other. A slit hole 32 is formed at an appropriate position on the side wall of the third cylindrical member 31, and the bottle neck portion 41 is connected to the slit hole 32. Thereby, the third cylinder member 31 and the other end of the second cylinder member 21 are connected via the bottleneck portion 41 so as to maintain airtightness. On the side wall of the third cylindrical member 31, the anode A is disposed at a position facing the slit hole 32. The third cylinder member is formed of a conductive material such as aluminum or SUS, for example.

  Both end portions of the third cylinder member 31 are closed by lid members 33 and 34 so as to maintain airtightness. Further, a vacuum pump connection port 35 that can be opened and closed by a valve (not shown) is provided at an appropriate position of the lid member 34. A vacuum pump (for example, a turbo pump) (not shown) is connected to the vacuum pump connection port 35. By sucking the inside of the third cylinder member 31 (the inside of the film forming chamber 30) with this vacuum pump, the internal space of the third cylinder member 31 is depressurized to a degree of vacuum that allows a sputtering process. The vacuum pump connection port 35 may be provided in the lid member 33.

  Inside the third cylinder member 31, a flat substrate support electrode 36 and a target electrode 37 are provided. The substrate support electrode 36 and the target electrode 37 are respectively disposed at both end portions of the third cylindrical member 31 so that the front side surfaces thereof face each other across the space in which the sheet plasma SP drawn from the sheet plasma forming chamber 20 moves. positioned.

Although not shown in detail in FIG. 1, the substrate support electrode 36 is a flat substrate holder that supports the substrate 51 to be deposited on its front side, a chuck mechanism that fixes the substrate 51 to the surface of the substrate holder, And a holder support mechanism that supports the holder so as to be movable along the axial direction of the third cylindrical member 31 (that is, the vertical direction of the sheet plasma film forming apparatus). The substrate holder is a main body of the substrate support electrode 36, and is electrically connected to the negative electrode of the substrate bias power source (not shown) by wiring, and the substrate bias power source is connected to the substrate support electrode 36 (precisely, the substrate) during the film forming process. A negative bias voltage −V _bias is applied to the holder. As the chuck mechanism, for example, a known electrostatic chuck or the like can be suitably used, but it is not particularly limited. The holder support mechanism is insulated from the lid member 34 and includes a support shaft that penetrates the lid member 34 in an airtight manner and an actuator (not shown) located outside the third cylinder member 31. The holder support mechanism can move (retract) the substrate holder attached to the tip of the support shaft by the operation of the actuator toward the lid member 34 or move (advance) toward the target electrode 37.

Although not shown in detail in FIG. 1, the target electrode 37 includes a backing plate that fixes a target 52 made of a film material on its front side surface, and a plate support mechanism that supports the backing plate movably along the axial direction. Further, a magnetic member 46 made of a soft magnetic material is provided on the back side surface of the target electrode 37. The backing plate is the main body of the target electrode 37. The target 52 is fixed to the front side surface of the target electrode 37 by a fixing member such as welding or a bolt, so that the target 52 is held and the supply electrode is attached to the back surface. . Since the supply electrode is electrically connected to the negative electrode of the target bias power source (not shown) by wiring, the target bias power source applies a negative bias voltage −V _bias to the target electrode 37 during the film forming process. . Since the plate support mechanism has the same configuration as the holder support mechanism, the description thereof is omitted. The plate support mechanism is also insulated from the lid member 33. As an actuator for the holder support mechanism and the plate support mechanism, for example, a known drive mechanism such as an air cylinder, a motor or a manual screw feed mechanism, a rack-pinion mechanism, or the like can be adopted.

  As described above, the substrate support electrode 36 and the target electrode 37 face each other so that the distance between them can be changed, and the sheet plasma SP is sandwiched therebetween. That is, the space formed between the substrate support electrode 36 and the target electrode 37 is a transport space where the sheet plasma SP is transported, and is a film formation space where the substrate 51 is subjected to a film formation process. The magnetic member 46 will be described later.

  The substrate support electrode 36 and the target electrode 37 are not specifically limited as long as the substrate support electrode 36 and the target electrode 37 have a flat plate shape having a two-dimensional extension. For example, the front side surface may be concave or convex. .

  A third coil 47 and a fourth coil 48 are provided outside the third cylindrical member 31 at positions surrounding its outer peripheral surface. Each of the third coil 47 and the fourth coil 48 is an electromagnetic coil (air core coil) capable of adjusting the strength of the magnetic force, and different poles face each other (for example, the third coil 47 has an N pole and a fourth coil). 48 are arranged in pairs such that the S pole). A coil magnetic field is formed by passing a current through the third coil 47 and the fourth coil 48. This coil magnetic field is a magnetic field that suppresses diffusion of the sheet plasma SP in the width direction (lateral direction of the sheet plasma film forming apparatus). That is, while the sheet plasma SP is drawn from the sheet plasma forming chamber 20 to the film forming chamber 30 and moves in the film forming space toward the anode A, the plasma does not diffuse in the width direction of the sheet plasma SP. Shape the shape as follows.

  The anode A is disposed at a position facing the slit hole 32 on the side wall of the third cylindrical member 31. Between the anode A and the side wall, the passage 42 for passing plasma is provided as described above. Similar to the bottleneck portion 41, the passage 42 may be designed so as to allow the sheet plasma SP to pass through appropriately. The anode A is electrically connected to the positive electrode of the main power supply by wiring, and this main power supply applies a positive voltage (for example, 100 V) between the anode A and the cathode K. As a result, a direct-current arc discharge is generated between the cathode K and the anode A, and the arc discharge collects charged particles (particularly electrons) in the sheet plasma SP.

  A permanent magnet 49 is provided on the back side surface of the anode A (the surface opposite to the facing surface of the cathode K). The permanent magnet 49 is arranged so that the anode A side is the S pole and the atmosphere side is the N pole. The diffusion of the sheet plasma SP in the width direction toward the anode A can be suppressed by the magnetic force lines formed from the N pole toward the S pole of the permanent magnet 49. Thereby, since the sheet plasma SP is converged in the width direction, the anode A can more appropriately recover the charged particles of the sheet plasma SP. The permanent magnet 49 is not necessarily provided.

  The plasma gun 10, the sheet plasma forming chamber 20, the bottle neck 41, the passage 42, the anode A, the permanent magnet pair 45, the coils 43, 44, 47, 48, and the permanent magnet 49 constitute a sheet plasma forming mechanism. Yes.

  As described above, in the present embodiment, since the plasma gun 10 and the sheet plasma forming chamber 20 constituting the sheet plasma film forming apparatus have a cylindrical shape with the same axis along the predetermined direction, the cross section is also circular. However, the present invention is not limited to this, and may be a polygonal shape or the like. Similarly, since the film forming chamber 30 has a cylindrical shape having an axis along a direction perpendicular to the predetermined direction, the cross section thereof is also circular, but may be a polygonal shape or the like. Further, the arrangement of each part described above can be changed as appropriate within the scope of the present invention, and the specific configuration of each part, each member, and the like can be replaced with a known configuration.

[Magnetic member and magnetic member moving mechanism]
Next, the configuration of the magnetic member 46 provided in the sheet plasma film forming apparatus according to the present embodiment will be described with reference to FIG. FIG. 2 is a schematic diagram showing an example of a configuration for moving the magnetic member 46 provided in the sheet plasma film forming apparatus according to the present embodiment.

  As shown in FIG. 2, the sheet plasma film forming apparatus according to the present embodiment further includes a magnetic member 46 disposed on the back side surface of the target electrode 37 so as to be movable within the back side surface. The magnetic member 46 is magnetized by at least one of the third coil 47 and the fourth coil 48. Thereby, a convex deformation part Pc is formed in the part of the sheet plasma SP corresponding to the position where the magnetic member 46 is arranged. In the present embodiment, the magnetic member 46 is a rectangular flat plate having an area smaller than that of the target electrode 37 and is made of a soft magnetic material.

  Specific soft magnetic materials are not particularly limited, and examples thereof include iron, nickel, and alloys thereof. Examples of the alloy include iron-silicon alloys such as silicon steel, iron-nickel alloys such as permalloy, iron-silicon-aluminum alloys such as sendust, and iron-cobalt alloys such as permendur. Although the specific physical properties of the soft magnetic material are not limited, it is necessary to have at least high magnetic permeability and low coercive force. This is because if the magnetic permeability is high, the magnetic lines of force are easily passed, but if the coercive force is high, the influence of the magnetic lines of force remains for a long time. Generally, if the magnetic permeability is 1000 H / m or more, it can be determined that the magnetic permeability is high. Moreover, if the coercive force is 80 A / m or less, it can be judged to be low. Therefore, the magnetic member 46 used in the present invention is preferably formed of a soft magnetic material having a magnetic permeability of 1000 H / m or more, and the coercive force of the soft magnetic material is more than 80 A / m. preferable.

  The specific configuration of the magnetic member 46 is not particularly limited as long as it is a flat plate having an area smaller than that of the target electrode 37. As the shape of the flat plate, various shapes such as a circle, a rectangle, and a polygon can be selected. However, from the viewpoint of generating a convex deformation Pc in the sheet plasma SP, the shape is a rectangle as in the present embodiment. Preferably there is. The magnetic member 46 only needs to be made of at least a soft magnetic material, and is not necessarily a flat plate made of only a soft magnetic material. For example, if the surface (facing surface) facing the back side surface of the target electrode 37 is made of a soft magnetic material, the surface (back surface) opposite to the facing surface may be made of a nonmagnetic material. That is, the magnetic member 46 may have a multilayer structure including a layer of a soft magnetic material that forms the facing surface and a layer of a nonmagnetic material laminated on this layer. Only a hard magnetic material such as a permanent magnet cannot be used as the magnetic member 46.

  The size of the magnetic member 46 is not particularly limited as long as the area is at least smaller than the target electrode 37. As will be described later, the magnetic member 46 is used to adjust the thickness of the sheet plasma SP located in the film formation space between the substrate holding electrode 36 and the target electrode 37. Therefore, the magnetic member 46 having an appropriate size can be selected according to the size of the target electrode 37, the width of the thickness adjustment region in the sheet plasma SP, and the like.

  As shown in FIG. 2, the magnetic member 46 is configured to move within the back surface of the target electrode 37 by the magnetic member moving mechanism 60. In the present embodiment, the magnetic member moving mechanism 60 includes a rotation drive source 61 and a support arm 62, and the magnetic member 46 is operated by the operation of the magnetic member moving mechanism 60 within the back side surface 37 a of the target electrode 37. Revolve. The rotational drive source 61 is composed of at least a known motor, and its output shaft 61 a is connected to one end of the support arm 62. The rotational drive source 61 is arranged so that the output shaft 61 a rotates about an axis perpendicular to the back side surface 37 a of the target electrode 37.

  An accelerometer may be provided between the output shaft 61 a and the support arm 62 depending on the condition of the revolution movement of the magnetic member 46. The support arm 62 is a magnetic member support, and is arranged such that its longitudinal direction is parallel to the back side surface of the target electrode 37, and the magnetic member 46 is fixedly supported at the other end. Thus, the magnetic member 46 revolves around the length of the support arm 62 as the rotation radius, with one end of the support arm 62 being the center of rotation and the magnetic member 46 being attached to the other end. As a result, as will be described later, the erosion imbalance due to the difference in the concentration of the sheet plasma SP can be effectively reduced.

[Operation of sheet plasma deposition system]
Next, the operation of the sheet plasma film forming apparatus according to the present embodiment will be described with reference to FIGS. 1 and 2 and FIGS. 3 (a) and 3 (b). FIG. 3A is a schematic diagram showing a state of the sheet plasma SP when the magnetic member 46 is provided in the film forming chamber 30 of the sheet plasma film forming apparatus according to the present embodiment, and FIG. 3A, the state in which the atoms sputtered on the surface of the target 52 reach the surface of the substrate 51 when holes 53a to 53c are formed on the surface of the substrate 51 in the film forming chamber shown in FIG. It is a schematic diagram to do. In FIG. 3B, the description of the target electrode 37 and the substrate support electrode 36 shown in FIG.

  First, the substrate 51 and the target 52 are carried into the film forming chamber 30. Then, by suction of a vacuum pump (not shown), the inside of the hermetic container 40, that is, the plasma gun 10, the sheet plasma forming chamber 20, and the film forming chamber 30 that are in airtight communication with each other is in a vacuum state.

  Next, a substrate bias power source (not shown) is electrically connected to the target electrode 37 and a main power source (not shown) is electrically connected to the anode A. Next, in the plasma gun 10, argon (Ar) gas is supplied into the discharge space from the tip of the auxiliary cathode constituting the cathode K, and glow discharge is performed at the auxiliary cathode. When the temperature of the tip portion of the auxiliary cathode rises due to this glow discharge, the main cathode constituting the cathode K is heated by this heat to a high temperature, and arc discharge is performed. As a result, plasma discharge inducing thermoelectrons are emitted from the cathode K to generate plasma. The generated plasma is drawn from the cathode K to the anode A side by the electric field generated by the first intermediate electrode 14 and the second intermediate electrode 15 and the coil magnetic field generated by the first coil 43, and is formed into a cylindrical plasma CP. The columnar plasma CP is introduced into the sheet plasma forming chamber 20 along the magnetic field lines of the coil magnetic field formed by the first coil 43.

  The columnar plasma CP introduced into the sheet plasma forming chamber 20 spreads in a sheet shape by a magnetic field generated from the permanent magnet pair 45 and the second coil 44 and is formed into a sheet plasma SP. The sheet plasma SP is introduced into the film forming chamber 30 through the bottleneck portion 41 (and the slit hole 32).

The sheet plasma SP introduced into the film forming chamber 30 is shaped in the width direction by a coil magnetic field generated by the third coil 47 and the fourth coil 48, and is formed in a space (film forming space) between the substrate 51 and the target 52. be introduced. A negative bias voltage −V _bias is applied to the target 52 with respect to the sheet plasma SP via the backing plate. A negative bias voltage −V _bias is applied to the substrate 51 with respect to the sheet plasma SP via the substrate holder. When the voltage of the target 52 is negatively biased, argon ions (Ar ⁺ ) in the sheet plasma SP are attracted toward the target 52 and collide with the target 52. At this time, due to the collision energy between the argon ions and the target 52, atoms (target atoms) of the material constituting the target 52 are ejected toward the substrate 51, and sputtering occurs.

  The target atoms ejected by sputtering go straight and pass through the sheet plasma SP. At this time, the target atoms are ionized by stripping electrons by the sheet plasma SP, and are ionized into cations. Since the substrate 51 is biased to a negative voltage, the traveling speed of this cation accelerates toward the substrate 51. By this acceleration, cations are deposited with increased adhesion strength on the surface of the substrate 51, and a film made of a target material is formed on the surface of the substrate 51 by receiving electrons accompanying the deposition. Thereafter, the sheet plasma SP is converged in the width direction by the magnetic lines of force of the permanent magnet 49, and the anode A collects the charged particles of the sheet plasma SP.

  Here, if the magnetic member 46 is not provided, the sheet plasma SP in the film formation space tends to increase in thickness at the central portion of the film formation space (see FIG. 5A). This is because the third coil 47 and the fourth coil 48 are located outside the film forming chamber 30. That is, the coil magnetic field formed by the third coil 47 and the fourth coil 48 is a magnetic field that suppresses diffusion of the sheet plasma SP. Therefore, on the upstream side (sheet plasma forming chamber 20 side, cathode K side) and the downstream side (anode A side) of the film forming space, which are the vicinity of the third coil 47 or the fourth coil 48, the magnetic field is relatively However, the magnetic field is relatively weak in the central portion away from the third coil 47 and the fourth coil 48. Therefore, the sheet plasma SP diffuses in the central portion, and its thickness increases.

  As described above, sputtering occurs when argon ions in the sheet plasma collide with the surface of the target 52. Therefore, if the thickness of the sheet plasma SP increases, the amount of sputtering at the corresponding site in the target 52 also increases. In addition, since more target atoms are ejected in multiple directions on the surface of the target 52 corresponding to the central portion of the film formation space, the amount of deposition increases in the central region of the surface of the substrate 51, and at various incident angles. Since the target cations reach the surface, the step coverage is also improved.

  On the other hand, since the sheet plasma SP converges without being diffused on the upstream side or downstream side of the film formation space, the amount of sputtering is relatively reduced. Furthermore, the incident amount of ion particles is relatively small in the peripheral region on the surface of the substrate 51 compared to the central region. As a result, the deposition amount is relatively reduced in the peripheral region of the surface of the substrate 51, and the incident angle of the cation reaching the surface is limited, so that the step coverage is also reduced (see FIG. 5B). .

  If the surface of the substrate 51 to be deposited is flat, such a partial difference in deposition amount and step coverage does not significantly affect the deposition. However, when a three-dimensional shape such as a groove or a hole is formed on the surface of the substrate 51, these grooves or holes are steps on the surface, so that the arrival of cations is hindered at a portion that becomes a “shadow” of this step. It becomes easy. Here, in the central region of the substrate 51, since the target cations reach the surface from multiple directions, “shadows” hardly occur, and therefore the step coverage is good. On the other hand, in the peripheral region of the substrate 51, cations that reach the surface of the substrate 51 are limited, and the cations are less likely to reach a portion that becomes a “shadow” of a step when viewed from the traveling direction of the cations. As a result, the step coverage is reduced in the peripheral region, so that significant variations in film thickness and covering state on the surface of the same substrate 51 occur.

  Therefore, in the present invention, as shown in FIGS. 2 and 3A, a magnetic member 46 made of a soft magnetic material is disposed on the back side of the target 52 (more precisely, the back side surface of the target electrode 37). Since the magnetic member 46 is magnetized by the third coil 47 or the fourth coil 48 by disposing the magnetic member 46, the sheet plasma SP is attracted to the magnetic member 46 side at the portion corresponding to the position of the magnetic member 46, and is convex. It deforms into a shape. Then, by causing the magnetic member 46 to revolve, the convex deformation portion (hereinafter referred to as the convex portion) Pc of the sheet plasma SP also moves. Since the portion where the amount of sputtering increases due to the movement of the convex portion Pc, it is possible to adjust the variation in the ionization rate of the target atom, and effectively reduce the partial variation in the deposition amount and the step coverage. be able to.

For example, as shown in FIG. 3B, it is assumed that a hole 53a is formed in the central region of the substrate 51, and holes 53b (right side in the drawing) and 53c (left side in the drawing) are formed in the peripheral region. a reference distance D ₀ between the sheet plasma SP and the surface of the target 52 in the peripheral portion of the. The magnetic member 46, when causing a convex portion Pc in the peripheral portion of the target 52, the distance D ₂ between the convex portion Pc and the surface of the target 52 is smaller than the distance D _0. Since the amount of sputtering on the surface of the target 52 depends on the distance from the surface to the plasma, when the distance between the surface of the target 52 and the convex portion Pc decreases in the peripheral portion, the amount of sputtering at the peripheral portion increases. Therefore, for example, in the hole 53b in the peripheral region of the substrate 51 shown on the right side of FIG. The thickness of the film 54 formed in the hole 53b increases the uniformity.

  Here, if the convex portion Pc does not move from the position on the right side in the drawing and is stationary, there is a difference in the amount of ion particles reaching the hole 53a in the central region of the substrate 51 due to an increase in the amount of sputtering in the peripheral portion. As a result, the film thickness becomes non-uniform. However, as described above, since the magnetic member 46 revolves around the target 52 (more precisely, the back side surface of the target electrode 37), the convex portion Pc also moves. Therefore, even in the hole 53a, the non-uniform film thickness as shown in FIG. 3B does not occur, and the film 54 with increased uniformity can be formed. Note that the uniformity of the film thickness is also increased in the left hole 53c in the figure.

  Further, since the magnetic member 46 is made of a soft magnetic material, a forcible magnetic field is not applied from the outside like a permanent magnet. Therefore, a weak magnetic field is maintained between the permanent magnet pair 45 and the anode A in the sheet plasma forming chamber 20. As a result, the sheet plasma SP can move to the film formation space while maintaining the sheet shape and high density state. In addition, when the magnetic member 46 is rotated, the magnetic member 46 is set to move evenly over the entire back side surface of the target electrode 37, so that not only the peripheral region on the surface of the substrate 51 but also the central region. It is possible to improve the step coverage.

  Here, the revolution speed of the magnetic member 46 is not particularly limited, and may be any speed as long as the convex portion Pc of the sheet plasma SP can be appropriately moved according to the variation in film formation. The speed may be changed. Further, the revolution may be performed at a constant cycle or intermittently. In the present embodiment, the revolution speed of the magnetic member 46 is constant, but by changing the revolution speed stepwise, it is possible to further improve the film thickness uniformity and the step coverage.

  In addition, when the magnetic member 46 is not allowed to stand and move on the back side surface of the target electrode 37, the convex portion Pc of the sheet plasma SP is stationary at the position where the magnetic member 46 is stationary. The amount of spatter increases at the position corresponding to Pc, and erosion concentrates. Therefore, it is not always possible to suppress the variation in the deposition amount and the step coverage, and the variation may be deteriorated depending on the stationary position. Therefore, in the present invention, the magnetic member 46 needs to be configured to move the back side surface of the target electrode 37 by the magnetic member moving mechanism 60.

[Modification]
In the present embodiment, as described above, the magnetic member moving mechanism 60 is configured to revolve the magnetic member 46, but the present invention is not limited to this, and is configured to reciprocate. Also good. The configuration for reciprocal movement is not particularly limited, and the magnetic member 46 may be simply reciprocated on the back side surface of the target electrode 37, or may be configured to scan and move the magnetic member 46 on the entire back side surface. Good. As a specific configuration, a known configuration can be adopted.

  Whether the magnetic member 46 is reciprocated or revolved may be appropriately selected according to the shape of the target 52 or the substrate 51. For example, if the target 52 and the substrate 51 are circular, the magnetic member 46 may be revolved. If the target 52 and the substrate 51 are rectangular, the magnetic member 46 may be reciprocated. Of course, the manner of movement of the magnetic member 46 is not limited to reciprocation or revolution.

  In the present embodiment, the output shaft 61a of the rotational drive source 61 is connected to one end of the support arm 62 and the magnetic member 46 is fixedly supported to the other end. However, the present invention is not limited to this. . For example, the structure which can change the space | interval of the site | part which connects the output shaft 61a and the site | part which fixes the magnetic member 46 may be sufficient.

  In this case, the support arm 62 fixes and supports the magnetic member 46 at any location on the side (support side) facing the back side surface 37a of the target electrode 37, and either of the back side (drive side) on the support side. What is necessary is just to be comprised so that the output shaft 61a may be connected to this location. In this configuration, the magnetic member 46 can be revolved by making the fixing part of the magnetic member 46 in the support arm 62 different from the connection part of the output shaft 61 a in the extending direction of the support arm 62. If the fixed portion and the connecting portion are not different in the extending direction of the support arm 62, the magnetic member 46 is rotated and supported because the magnetic member 46 is fixedly supported immediately below the rotation center of the support arm 62. . In this case, the convex portion Pc of the sheet plasma SP does not move on the surface of the target 52 as in the state where the magnetic member 46 is left stationary, which is not preferable.

  The magnetic member 46 only needs to revolve relative to the front side surface of the substrate support electrode 36 facing the target electrode 37 on the back side surface of the target electrode 37. Therefore, the specific configuration of the magnetic member moving mechanism is not limited to the configuration in which the support arm 62 is rotated by the rotational drive source 61 as shown in FIG. 2. For example, the target electrode 37 is used as a magnetic member support, The magnetic member 46 may be fixed to the back side surface of the target electrode 37. With this configuration, since the target electrode 37 is rotated by the rotation drive source 61, the magnetic member 46 revolves relative to the front side surface of the substrate support electrode 36.

  Further, the output shaft 61a of the rotational drive source 61 does not need to be an axis perpendicular to the back side surface 37a, and may be an axis parallel to the back side surface 37a or may be inclined. That is, it is only necessary that the rotational output of the rotational drive source 61 rotates the magnetic member support or the target electrode 37. For example, a mechanism for changing the direction of the rotational force such as a bevel gear or a worm gear may be provided.

  As described above, in the present invention, if the configuration in which the magnetic member 46 is revolved on the back side surface 37a is adopted, the magnetic member moving mechanism includes a known rotational drive source and a magnetic member support, and the magnetic member As long as it is relatively revolved within the back side surface.

(Example)
Next, although an Example demonstrates this invention concretely with reference to Fig.4 (a)-(d), this invention is not limited only to this Example. In this embodiment, in order to show the effect of the present invention more clearly, the step coverage of the film formed in the hole when the magnetic member 46 is not provided, the magnetic member 46 is provided, and the magnetic member 46 is dared. When not moved, the step coverage of the film formed in the hole was compared.

4 (a) and 4 (b) are comparative examples corresponding to the conventional configuration shown in FIG. 5 (b). In the sheet plasma film forming apparatus according to the present embodiment, the substrate 151 is not used. It is a figure which shows the result (electron micrograph) of the level | step difference coverage of the holes 153a and 153b when forming into a film. FIG. 4A shows the result corresponding to the hole 153a formed in the central region of the substrate 151, and FIG.
The result corresponding to the hole 153b formed in the peripheral region (outer peripheral portion) is shown.

  4 (c) and 4 (d) are examples corresponding to the configuration of the present invention shown in FIG. 3 (b), and a film is formed on the substrate 51 using the magnetic member 46 in the sheet plasma film forming apparatus. It is a figure which shows the result of the level | step difference covering property of the holes 53a and 53b when doing. FIG. 4C shows the result corresponding to the hole 53a formed in the central region of the substrate 51, and FIG. 4D shows the result corresponding to the hole 53b formed in the peripheral region (outer peripheral portion). .

  As shown in FIG. 4 (a), the film thickness is uniform in the hole 153a in the central region of the substrate 151, whereas the periphery of the substrate 151 is shown in FIG. 4 (b). In the region, the film thickness on the central side is small and the film thickness on the outer peripheral side is large in the hole 153b. On the other hand, when the present invention is applied, as shown in FIG. 4D, in the peripheral region of the substrate 51, the film thickness in the hole 53b is the same as the film thickness in the hole 153b shown in FIG. Compared to the above, the step coverage is clearly improved.

  In this embodiment, as described above, since the magnetic member 46 is not rotated, if the traveling direction of the sheet plasma in FIG. 3B (from right to left in the figure) is used as a reference, FIG. As shown in FIG. 3, in the central region of the substrate 51, the film thickness on the downstream side (left side in the figure) in the traveling direction is large and the film thickness on the upstream side (right side in the figure) in the traveling direction is small in the hole 53a. It has become. This is because the magnetic member 46 is stationary at the upstream side in the traveling direction as viewed from the hole 53a. However, by rotating the magnetic member 46, it is possible to eliminate the non-uniformity of the film thickness even in the central region, similarly to the hole 153a shown in FIG. Therefore, according to the present invention, it can be seen that not only can the hole step coverage be improved, the film thickness distribution can be made more uniform, but also the coverage can be improved.

  If the present invention described above is viewed as a sheet plasma processing method, in forming a thin film by sputtering, a step of introducing a sheet-like plasma between a target and a substrate that are arranged with their front sides facing each other; Including a step of performing sputtering by applying a voltage to each substrate via an electrode, and in the step of performing sputtering, simultaneously with the sputtering, a magnetic member formed of a soft magnetic material is moved on the back side surface of the target. ing. Thereby, the film thickness distribution of the film coated on the substrate can be improved, and the step coverage and the coverage property can be improved even if holes or grooves are formed on the substrate surface.

  It should be noted that the present invention is not limited to the description of the above-described embodiment, and various modifications are possible within the scope shown in the claims, and are disclosed in different embodiments and a plurality of modifications, respectively. Embodiments obtained by appropriately combining technical means are also included in the technical scope of the present invention.

  The sheet plasma film-forming apparatus of the present invention can be suitably used not only in the field of vacuum film-forming apparatus using sputtering, but also in general apparatuses using ion assist modules and plasma.

It is a schematic diagram which shows schematic structure of the sheet plasma film-forming apparatus which concerns on embodiment of this invention. It is a schematic diagram which shows an example of the structure which moves the magnetic member provided in the sheet plasma film-forming apparatus shown in FIG. (A) is a schematic diagram which shows the state of the sheet plasma at the time of providing a magnetic member in the film-forming chamber of the sheet plasma film-forming apparatus shown in FIG. 1, (b) is a substrate surface in the said film-forming chamber. It is a schematic diagram explaining the state where the atoms sputtered on the surface of the target reach the surface of the substrate when holes are formed. (A), (b) is a figure which shows the result of the level | step difference coverage of a hole when it forms into a film | membrane on the board | substrate by the structure of the film-forming chamber shown to Fig.3 (a), (c), (d) is a figure. FIG. 4 is a diagram showing the result of hole step coverage when a film is formed on a substrate in the configuration of the film forming chamber shown in FIG. (A) is a schematic diagram which shows the state of the sheet plasma in the film-forming chamber of a general sheet plasma film-forming apparatus, (b) is the case where the hole is formed in the substrate surface in the said film-forming chamber FIG. 6 is a schematic diagram for explaining a state in which atoms sputtered on the target surface reach the substrate surface.

Explanation of symbols

20 Sheet plasma forming chamber 30 Deposition chamber 36 Substrate support electrode 37 Target electrode 37a Back side surface 46 of target electrode Magnetic member 51 Substrate 52 Target 60 Magnetic member moving mechanism 61 Rotation drive source 61a Output shaft 62 Support arm (magnetic member support)

Claims (5)

A target electrode for fixing the target on the front side;
A substrate support electrode for supporting a substrate to be deposited on the front side;
A film formation chamber in which the target electrode and the substrate support electrode are provided inside with the front surfaces facing each other; and
Cylindrical plasma is generated, the cylindrical plasma is transformed into a sheet-like plasma (hereinafter referred to as sheet plasma) by a magnetic field of a permanent magnet pair, and the sheet plasma is supported by the target electrode and the substrate in the film formation chamber. A sheet plasma formation mechanism that moves between the electrodes to the anode;
A magnetic member made of at least a soft magnetic material, having a smaller area than the target electrode, and disposed on the back side surface of the target electrode;
And a magnetic member moving mechanism for moving the magnetic member within the back side surface of the target electrode.   The sheet plasma film forming apparatus according to claim 1, wherein the magnetic member moving mechanism is configured to revolve or reciprocate the magnetic member within the back side surface of the target electrode. The magnetic member moving mechanism includes a rotation drive source, and a magnetic member support that supports the magnetic member on the back side surface,
The sheet plasma film-forming apparatus of Claim 2 comprised so that the said magnetic member may be revolved within the said back side surface by rotating the said magnetic member support body by the said rotational drive source. The target electrode also serves as the magnetic member support, and the magnetic member is fixed to the back side surface of the target electrode,
The magnetic member moving mechanism revolves the magnetic member relative to the front side surface of the substrate support electrode within the back side surface of the target electrode by rotating the target electrode by the rotation drive source. The sheet plasma film-forming apparatus of Claim 3 comprised so that it may make it.   4. The sheet plasma film forming apparatus according to claim 1, wherein the soft magnetic material has a magnetic permeability of 1000 H / m or more. 5.