JP4393856B2 - Deposition equipment - Google Patents

Description

  The present invention relates to a film forming apparatus, and more particularly to a film forming apparatus in which a baffle disposed in a film forming chamber is moved inside and outside a region of an exhaust port of a vacuum pump by a driving device.

  An exhaust port communicating with the vacuum pump is formed in the wall of the film forming chamber of the sputtering apparatus or the vacuum evaporation apparatus, and the internal space of the film forming chamber is depressurized by the vacuum pump through the exhaust port at a predetermined exhaust speed. The

  Here, since the film-forming particles that have entered and adhered to the exhaust port embed air and moisture and delay the exhaust time of the exhaust system, it is not desirable. A member called a worn baffle (hereinafter simply referred to as a baffle) is placed to prevent film particles generated by the film deposition system from adhering to the baffle shielding plate and entering the exhaust chamber. is doing.

Incidentally, such a baffle has a configuration in which the shielding plate is fixed (hereinafter referred to as a first conventional example, FIG. 1 of Patent Document 1), and an angle in which the shielding plate is appropriately changed by an actuator. (Refer to FIG. 2 of Patent Document 1 below). For example, according to the second conventional example, the baffle shielding plate is set to an angle that widens the exhaust passage when it is desired to ensure a sufficient exhaust speed, while the film formation process is performed and the exhaust passage of the film formation particles goes around. In order to suppress this, a configuration is adopted in which the exhaust passage is set to an angle for restricting.
JP 2001-239143 A

  However, the present inventors consider that the baffles described in the first and second conventional examples have the following problems.

  In the case of a fixed baffle, if the number of shielding plates is reduced to widen the gap, the exhaust resistance can be reduced and the exhaust conductance can be increased during the exhaust process. (Invasion into) is inhibited. On the other hand, if the number of shielding plates is increased to narrow the gap, the effect of suppressing the wraparound of the film formation particles can be sufficiently exhibited during the film formation process, but the exhaust resistance may be increased during the exhaust process. That is, in the fixed baffle, it is difficult to design that can achieve both the configuration of the shielding plate that reduces the exhaust resistance and the configuration of the shielding plate that sufficiently suppresses the wraparound of the film formation particles.

  In the case of a movable baffle with a shield plate, it is possible to improve the exhaust resistance of the vacuum exhaust system by changing the angle of the shield plate of the baffle as appropriate, but the baffle placed in front of the exhaust port As a result, the flow of the exhaust gas is disturbed, and the increase in exhaust resistance caused by this cannot be completely eliminated. Furthermore, since the baffle shielding plate itself is movable, there are as many movable points as the number of shielding plates inside the film formation chamber, and friction wear powder is generated by friction between members at these movable points. there's a possibility that. In particular, since the frictional resistance at the movable point increases during vacuum decompression in the film forming chamber, such movable points are reduced as much as possible, and various problems caused by wear powder such as defective operation of the shielding plate are eliminated in advance. It can be said that it is desirable to keep it.

  The present invention has been made in view of the circumstances as described above, and an object of the present invention is to prevent the film formation particles from entering the exhaust chamber during the film formation process by the baffle. An object of the present invention is to provide a film forming apparatus capable of preventing an increase in exhaust resistance and improving generation of frictional wear powder at a movable point of a film forming chamber.

  The film forming apparatus according to the present invention includes a film forming chamber having an exhaust port in a wall portion, an exhaust means for exhausting the inside of the film forming chamber through the exhaust port, and the exhaust having a predetermined opening ratio. A baffle disposed inside the film formation chamber so as to cover the mouth, and a driving means for driving the baffle, the baffle having a gap between the frame and the frame. A plurality of shielding plates arranged, and the driving means advances the baffle so as to cover the exhaust port and retracts the baffle so as not to cover the exhaust port.

  In addition, a film forming apparatus according to the present invention has a film forming chamber having an exhaust port in a wall portion, an exhaust unit for exhausting the inside of the film forming chamber through the exhaust port, and a predetermined opening ratio. A baffle disposed inside the film forming chamber so as to be able to cover the exhaust port; and a driving means for driving the baffle, and the baffle maintains an interval corresponding to the aperture ratio. And the drive means is configured to advance the baffle so as to cover the exhaust port and to retract so as not to cover the exhaust port. .

  As a result, the baffle can be moved into the area of the exhaust port during the film formation process to prevent the film formation particles from entering the exhaust chamber, and the baffle can be moved out of the area of the exhaust port during the exhaust process. It is possible to prevent the exhaust resistance from increasing due to the baffle.

In addition, a film forming apparatus according to the present invention is disposed in the inner space, the film forming chamber having an exhaust port in the wall portion, exhaust means for exhausting the inside of the film forming chamber through the exhaust port, A baffle comprising a shielding plate and a supporting member that supports the shielding plate and having a predetermined aperture ratio, and a driving device that drives the baffle, and the shielding plate is fixed to the supporting member. The baffle is moved in and out of the area of the exhaust port by the driving device. With this, the baffle can be moved in and out of the area of the exhaust port by the driving device while the shielding plate is fixed to the support member. The generation of frictional wear powder at the movable point of the membrane chamber can be improved.

  Here, the baffle includes a plurality of shielding plates arranged with a gap therebetween, and substantially the entire area of the exhaust port can be covered with the baffle including the gap and the shielding plate. In this way, the baffle is moved into the area of the exhaust port, and the baffle covers almost the entire area of the exhaust port, thereby effectively eliminating film formation particles from entering the exhaust chamber.

  In the film forming chamber, a substrate and a film forming particle source for supplying a film material to the substrate are arranged.

  The film forming particle source is, for example, a sputtering target or an evaporation source, and the baffle deposition effect functions effectively in a film forming chamber in which such a film forming particle source is disposed.

  Here, the shielding plate is a strip-shaped plate, and the strip-shaped plate is arranged with the longitudinal end thereof fixed to the support member with the gap therebetween, and the exhaust port is covered with the baffle. When the baffle is projected from the target or the evaporation source, the gap is hidden by the strip-shaped plate, and the film-forming particles discharged from the target or the evaporation source toward the exhaust port are the strip-shaped plate. It collides with. Thereby, the film-forming particles released toward the exhaust port can be reliably attached to the shielding plate.

  According to the present invention, the baffle can prevent particles from entering the exhaust chamber during the film formation process by moving the baffle so as to cover the exhaust port by the driving device and retracting so as not to cover the exhaust port, During the evacuation process, it is possible to prevent an increase in exhaust resistance due to the baffle, and to generate frictional wear powder at the movable point of the film formation chamber by moving the baffle with the drive unit with the shielding plate fixed to the support member. An improved film formation apparatus can be obtained.

(Embodiment 1)
The first embodiment will be described below with reference to the drawings.

  FIG. 1 shows an outline of the sputter deposition chamber and its vacuum exhaust system in the first embodiment. FIG. 2 is a diagram for explaining the internal configuration of the sputter film forming chamber. FIG. 2 is an upper schematic view of the inside of the sputter film forming chamber as viewed from above. FIG. 3 is a side view of the inside of the sputter film forming chamber. It is a side schematic diagram.

According to FIG. 1, the vacuum film-forming apparatus 1 includes a vacuum chamber 2 and a vacuum exhaust system 4 (exhaust means). In the vacuum exhaust system 4, the internal space 3 of the vacuum chamber 2 is changed from atmospheric pressure to a predetermined pressure ( For example, a rough exhaust rotary pump 5 (low vacuum pump) that is depressurized to a pressure of about 5 Pa is connected to a first exhaust port 7 (hereinafter simply referred to as an exhaust port 7) of the vacuum chamber 2 through a rough valve 6. Has been. Also, an oil diffusion pump 8 (high vacuum pump) for main exhaust that can reduce the internal space 3 to a pressure at which the film forming process can be started (for example, a pressure of about 6 × 10 ⁻³ Pa) is vacuumed via the main valve 9. The chamber 2 is connected to a second exhaust port 10 (hereinafter simply referred to as an exhaust port 10). Further, the oil diffusion pump 8 is connected to the rotary pump 5 via the foreline valve 11 in order to depressurize the inside to a pressure (for example, a pressure of about 30 Pa) that enables the oil diffusion pump 8 to be started. A baffle 12 having a shielding plate 15 (see FIG. 3) for adhering film forming particles in a film forming process, which will be described later, is provided in the vicinity of the exhaust port 10 of the internal space 3 of the vacuum chamber 2 with a driving device 21 (drive). Means). A vacuum gauge 13 for monitoring the degree of vacuum in the internal space 3 of the vacuum chamber 2 is also installed in the vacuum chamber 2.

  According to FIG. 2, the vacuum chamber 2 is composed of a first sub-vacuum chamber portion 2a and a second sub-vacuum chamber portion 2b. Here, both sub vacuum chamber parts 2a and 2b are comprised in the form divided | segmented along the central axis of the cylindrical (substantially cylindrical) internal space 3 formed in the state joined mutually. . That is, in a state where both the sub-vacuum chamber portions 2a and 2b are joined, a sealed internal space 3 is formed which is surrounded by the wall portion 14 except for the exhaust ports 7 and 10, and this internal space 3 is plasma-reacted. It will function as a film formation chamber.

  First, the configuration of the first sub-vacuum chamber portion 2a will be described with reference to FIGS.

  As shown in FIGS. 2 and 3, in the first sub-vacuum chamber portion 2a, a substantially rectangular exhaust port 10 is formed on the side wall surface 16 near the substantially central portion of the first half-cylindrical internal space 3a. Has been. An open / close valve arrangement space of the oil diffusion pump 8 called the main valve 9 is connected to the first half-cylindrical internal space 3 a through the exhaust port 10.

  Further, a plurality of shielding plates 15 (strip-shaped plates) are joined in parallel to the frame-like frame body (support member) 18 with the longitudinal direction of the strip-shaped shielding plates 15 being aligned with a gap 24 at a predetermined interval. Thus, a rectangular baffle 12 having a predetermined aperture ratio is formed, and this baffle 12 is disposed in the internal space 3 in the vicinity of the exhaust port 10. That is, both ends in the longitudinal direction of the shielding plate 15 are fixed to the frame frame 18 that is surrounded in an annular shape, and the shielding plate 15 is arranged in a predetermined direction for the reason described later.

  Further, the area of the main surface of the baffle 12 composed of the gap 24 and the shielding plate 15 is larger than the opening area of the exhaust port 10, whereby the entire area of the exhaust port 10 can be covered by the baffle 12. Further, in order to bring the baffle 12 as close as possible to the substantially cylindrical wall side surface 16, the frame frame 18 is bent along the wall side surface 16 into an arcuate shape.

  As shown in FIG. 3, the frame 18 of the baffle 12 is connected to two support bars 20 via a bracket 19, and the support bar 20 is connected to a drive device 21 and rotates. It is fixed to the flange 22. Thus, the rotating flange 22 arranged on the wall lower surface 25 is rotated by the driving power transmitted from the driving device 21 via the driving shaft 27, and the shielding plate 15 is supported and fixed to the frame-like frame 18. Thus, the baffle 12 can be rotated within a predetermined range along the wall side surface 16. As a result, the baffle 12 is moved closer to the exhaust port 10 from the retracted position of the baffle 12 outside the region of the exhaust port 10 (the position of the baffle 12 illustrated by a dotted line in FIG. 2), and is opposed to the exhaust port 10. Thus, the baffle 12 can be moved to the advance position of the baffle 12 (the position of the baffle 12 shown by a solid line in FIG. 2) in the region of the exhaust port 10 that covers almost the entire area of the exhaust port 10. Note that the baffle 12 illustrated in FIG. 3 shows a state in the middle of movement from the retracted position to the advanced position.

  According to FIGS. 2 and 3, the strip-shaped first and second Al sputter targets 23 a and 23 b adjacent to each other are film forming particle sources for supplying the coating material to the substrate, and the baffle 12 with respect to the exhaust port 10. The targets 23 a and 23 b are arranged on the wall side surface 16 opposite to the retracted position so that the longitudinal direction of the targets 23 a and 23 b extends in the vertical direction of the wall side surface 16.

  Next, the configuration of the second sub-vacuum chamber portion 2b will be described with reference to FIG.

  A disc-shaped substrate holder 31 is installed inside the second sub-vacuum chamber portion 2b. A plurality of substrates 30 are arranged on the outer periphery of the substrate holder 31.

  In this state, the first sub-vacuum chamber portion 2a and the second sub-vacuum chamber portion 2b are joined to each other, thereby comprising the first half-cylindrical internal space 3a and the second half-cylindrical inner space 3b. A sealed cylindrical internal space 3 is formed, and during the film formation process, sputtered film formation particles can be deposited on the substrate 30 to coat the surface with a desired film thickness. The film formation of the plurality of substrates 30 arranged around the holder 31 is made uniform by forming the film while rotating the substrate holder 31.

  Here, a series of processing operation examples from the start of the sputtering film forming apparatus to the end of the film forming process will be described with reference to the flowchart of FIG. Steps S401 to S407 in FIG. 4 are steps showing an example of a processing operation when the internal space 3 of the vacuum chamber 2 is evacuated. Steps S408 to S412 are processes for forming a sputter film in the internal space 3 of the vacuum chamber 2. It is the process which showed the example of processing operation in the case of performing.

  In the state where the internal space 3 of the vacuum chamber 2 is sealed, the rotary pump 5 is started (step S401). Subsequently, the foreline valve 11 is opened, the inside of the oil diffusion pump 8 is exhausted by the rotary pump 5, and the oil diffusion pump 8 is started when the degree of vacuum inside the oil reaches a predetermined pressure (for example, about 30 Pa) ( Step S402). Thereafter, the foreline valve 11 is once closed, the rough valve 6 is opened, and the internal space 3 is roughly exhausted by the rotary pump 5 (step S403).

  Here, the degree of vacuum of the internal space 3 is monitored by the vacuum gauge 13, and it is determined whether or not the internal space 3 has been depressurized to a degree of vacuum that can be used by the oil diffusion pump (for example, 5 Pa or less) (step S404). ). If the decompression is insufficient due to insufficient exhaust (No in step S404), the exhaust of the internal space 3 is continued by the rotary pump 5 and if sufficient decompression is possible (Yes in step S404), the process proceeds to the next step and the rough valve 6 is closed. Then, the exhaust of the internal space 3 by the rotary pump 5 is stopped (step S405).

Then, the foreline valve 11 is opened to resume the exhaust by the rotary pump 5 inside the oil diffusion pump 8, and the baffle 12 is moved to the retracted position in FIG. 2 to arrange the baffle 12 outside the region of the exhaust port 10. (Step S406). Thus, an increase in exhaust resistance of the oil diffusion pump 8 due to the baffle 12 can be prevented in advance. The baffle 12 is moved to the retracted position, and the main valve 9 is opened and the internal space 3 is exhausted to a predetermined degree of vacuum (for example, 6 × 10 ⁻³ Pa) by which the film forming process can be performed by the oil diffusion pump 8. (Step S407), a series of exhaust processes is terminated.

  In a state in which the degree of vacuum of the internal space 3 of the vacuum chamber 2 is maintained at a degree of vacuum capable of performing the film forming process, the baffle 12 is moved to the advanced position in FIG. (Step S408). Accordingly, it is possible to prevent the film formation particles generated by the film formation process from colliding with the shielding plate 15 of the baffle 12 and entering the main valve 9 from the exhaust port 10. That is, when the baffle 12 is projected from the targets 23a and 23b with the baffle 12 covering almost the entire exhaust port 10 during the film formation process (sputter deposition), the gap 24 between the baffles 12 is completely formed by the shielding plate 15. The arrangement angle of each shielding plate 15 is set so that the shielding plate 15 faces the targets 23a and 23b so as to be hidden. By doing so, the sputter film formation particles released from the targets 23a and 23b toward the exhaust port 10 can collide with the shielding plate 15, and further progress of the sputter film formation particles can be prevented. Can be prevented from entering the main valve 9 and adhering to the inside thereof.

  Thereafter, the film forming process is started (step S409). Specifically, an MF power source 32 is connected to the targets 23a and 23b, and a DC pulse having a frequency of 40 kHz is applied from the MF power source 32 to the targets 23a and 23b. A pair of N-pole and S-pole magnets (not shown) arranged behind the targets 23a and 23b generates magnetic field components parallel to the target substrates 23a and 23b. Further, Ar gas as a discharge gas is an upper surface (not shown) of the wall portion 14 and is provided between the first and second Al sputter targets 23a and 23b (see FIG. 2). To the vicinity of the targets 23a and 23b. Thus, secondary electrons emitted from the targets 23a and 23b are trapped in the vicinity of the surfaces of the targets 23a and 23b, and are subjected to a cyclotron motion by receiving a force in a direction perpendicular to the electric field and the magnetic field. And the collision is repeated to promote ionization of Ar gas. As a result, high-density plasma based on magnetron discharge (glow discharge) is generated in the vicinity of the targets 23a and 23b. Ar ions generated by the electron ionization action are accelerated and collide toward the target 23a and 23b to which voltage is applied, and the sputtered deposition particles (Al particles) are directed from the target 23a and 23b to the substrate 30 by the collision energy. The sputtered film-forming particles can be deposited on the substrate 30 to obtain a film having a desired film thickness. At this time, since a part of the sputtered film forming particles is discharged toward the exhaust port 10, the baffle 12 as described above prevents the sputtered film forming particles from adhering to the main valve 9. Yes.

  Subsequently, it is confirmed whether or not the film forming process is continued in the vacuum chamber 2 (step S410). If the film forming process is continued (Yes in step S410), the baffle 12 is not moved. The state facing the exhaust port 10 is maintained. On the other hand, when the continuation of the film forming process is completed (No in step S410), the process proceeds to the next step.

  When the sputter deposition process is completed, the baffle 12 is moved to the retracted position in order to quickly evacuate the internal space 3 in preparation for the next reaction (for example, in preparation for replacing the reaction gas) (step). S411), the exhaust speed of the oil diffusion pump 8 is increased. Then, when all the reactions are finally finished, the main valve 9 is closed (step S412), and a series of film forming processes is finished.

  According to the configuration of the baffle 12 as described above, the following effects are obtained.

  When it is desired to increase the exhaust speed during the exhaust process, it is possible to prevent the exhaust resistance from increasing due to the baffle 12 by moving the baffle 12 to the retreat position of the exhaust port 10, while the film formation generated by the film formation process is performed. When it is desired to prevent the particles from entering the main valve 9, the baffle 12 is moved to the advance position of the exhaust port 10, so that the film formation particles generated by the film formation process can collide with the baffle 12. The film particles can be prevented from adhering to the main valve 9.

  Further, the baffle 12 can be moved in a state where the shielding plate 15 is fixed to the frame-like frame body 18, and compared with a case where individual shielding plates are swung as described in JP-A-2001-239143. Since the movable point of the vacuum chamber 2 can be limited to, for example, the axis of the rotary flange 22, the amount of frictional wear powder generated by friction between members at the movable point can be suppressed.

(Embodiment 2)
The second embodiment will be described below with reference to the drawings.

  In the first embodiment, the content of the baffle deposition was described using the sputter deposition chamber as an example. Here, the content of the baffle deposition will be described using an ion plating film deposition chamber, which is a kind of evaporation, as an example.

  For convenience, the same reference numerals are assigned to components corresponding to the first embodiment. Further, the description of the same configuration and operation as in the first embodiment will be omitted.

  FIG. 5 shows an internal configuration of the ion plating film forming chamber, and is an internal schematic view of the ion plating film forming chamber as viewed from the side.

  A substrate holder 31 for mounting the substrate 30 and the substrate 30 is disposed above the internal space 3 of the vacuum chamber 2. The material of the substrate holder 31 is conductive, and the substrate holder 31 is fixed by a bearing 41 attached to the upper surface of the vacuum chamber 2 with one end of the conductive rotation shaft 40 fixed to the substantially central portion of the substrate holder 31. It is rotatably attached via a rotating shaft 40. The rotating shaft 40 and the substrate holder 31 are both insulated from the grounded vacuum chamber. The substrate holder 31 is supplied with high-frequency power from a high-frequency power source 43 (via a capacitor Co) via a rotating shaft 40. The substrate holder 31 is biased to a negative potential with respect to the vacuum chamber 2 by a DC power supply 45 (via a coil Lo).

  On the other hand, an evaporation source 42 as a film forming particle source for supplying a coating material to the substrate 30 is disposed below the internal space 3 of the vacuum chamber 2 so as to face the substrate 30. 44 is connected.

  Further, an exhaust port 10 is provided in the wall side surface 16 of the vacuum chamber 2, and the exhaust port 10 is connected to the vacuum pump P via the main valve 9. As a configuration example of the vacuum exhaust system, a combination of an oil diffusion pump and a rotary pump as in the first embodiment may be used. A baffle 12 similar to that of the first embodiment is arranged in the vicinity of the exhaust port 10 in the internal space 3 so as to be connected to the driving device 21. The baffle 12 is operated as described later.

  In such a vacuum chamber 2, the main valve 9 is opened and the internal space 3 of the vacuum chamber 2 is maintained in a predetermined atmosphere by the vacuum pump P through the exhaust port 10. Next, the high frequency power supply 43 is operated to form a plasma region S in the internal space 3 of the vacuum chamber 2. Thereafter, the DC power supply 45 is operated to form a DC electric field in the vacuum chamber 2.

  Then, the evaporation material evaporated from the evaporation source 42 by the evaporation power source 44 is excited in the plasma region S, and the particles excited by the steep electric field and the DC electric field in the vicinity of the substrate holder 31 are accelerated to collide with the surface of the substrate 30. Then, a film having a desired film thickness is formed on the substrate 30.

  Here, during the ion plating film forming process as described above, film forming particles emitted from the evaporation source 42 may be emitted toward the exhaust port 10. Therefore, as in the first embodiment, the baffle 12 is moved by the drive device 21 via the drive shaft 27 to a position (advancing position) facing the exhaust port 10 and covering the exhaust port 10 with the baffle 12, The film formation particles are prevented from entering the main valve 9. Further, during the exhaust process of exhausting the internal space 3 of the vacuum chamber 2, in order to increase the exhaust speed, the baffle 12 is moved outside the region of the exhaust port 10 (retracted position), and the exhaust resistance caused by the baffle 12 is reduced. Prevent increase.

  Note that the specific configuration of the baffle 12 such as the frame-shaped frame body, the shielding plate, and the mechanism for moving them is the same as that of the first embodiment, and a description thereof will be omitted.

  Thus, when it is desired to increase the exhaust speed during the exhaust process, the baffle 12 can be moved to the retracted position outside the region of the exhaust port 10 to prevent an increase in exhaust resistance due to the baffle 12, while the film formation process When it is desired to prevent the generated film formation particles from entering the main valve 9, the film formation particles generated by the film formation process are moved to the baffle 12 by moving the baffle 12 to the advance position in the region of the exhaust port 10. It is possible to prevent film formation particles from adhering to the main valve 9.

  Further, the baffle 12 can be moved in a state where the shielding plate 15 is fixed to the frame-like frame body 18, for example, as compared with a case where individual shielding plates are swung as described in JP-A-2001-239143. In addition, since the movable point of the vacuum chamber 2 can be limited to, for example, the axis of the rotating flange, it is possible to suppress the amount of friction wear powder generated due to friction between members at the movable point.

  The operation of rotating the baffle 12 along the wall side surface to cover the exhaust port has been described so far, but the example of moving the baffle 12 is not limited to this, and for example, the baffle 12 is supported by an appropriate guide member. Then, it may be slid in parallel along the exhaust port, and the baffle 12 may be opened and closed with respect to the exhaust port 10 like a door.

  Moreover, although the example which arrange | positions an exhaust port in a wall part side surface was demonstrated, you may arrange | position this exhaust port in the upper surface or lower surface inside a film-forming chamber.

  Further, the baffle 12 including the plurality of shielding plates 15 supported by the frame-like frame body (shielding plate support member) 18 with the gap 24 has been described as an example. However, the entire surface of the frame-like frame body 18 is covered. Thus, a baffle can be simply formed by sticking the shielding board (flat plate or curved board) which does not have an opening. In this case, even if the baffle is advanced so as to cover the exhaust port 10, the shielding plate is separated from the wall portion 14 so as to ensure a predetermined distance between the shielding plate and the wall portion 14 of the vacuum chamber 2. If arranged, the vacuum chamber 2 can be evacuated through this interval during the film forming process.

  According to the present invention, it is possible to achieve both the prevention of the exhaust chamber (valve) by the film formation particles and the improvement of the exhaust resistance of the vacuum exhaust system, and the vacuum formation used for the film formation processing of various products such as automobile headlamps. It is useful as a membrane device.

It is the figure which showed the outline | summary of the sputter film deposition chamber which concerns on Embodiment 1 of this invention, and its evacuation system. It is drawing explaining the structure of the internal space of the sputter film deposition chamber which concerns on Embodiment 1 of this invention, and is the upper schematic diagram which looked at the inside of the sputter film deposition chamber from the upper direction. It is drawing explaining the structure of the internal space of the sputter film deposition chamber which concerns on Embodiment 1 of this invention, and is the side schematic diagram which looked at the inside of the sputter film deposition chamber from the side. It is a flowchart explaining a series of processing operation examples from the start of the film forming apparatus to the end of the film forming process. It is drawing explaining the structure of the internal space of the ion plating film-forming chamber which concerns on Embodiment 2 of this invention, and is the side schematic diagram which looked at the inside of the ion plating film-forming chamber from the side.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Vacuum film-forming apparatus 2 Vacuum chamber 3 Internal space 4 Vacuum exhaust system 5 Rotary pump 6 Rough valve 7 First exhaust port 8 Oil diffusion pump 9 Main valve 10 Second exhaust port 11 Foreline valve 12 Baffle 13 Vacuum gauge 14 Wall Part 15 Shielding plate 16 Wall side surface 18 Frame-shaped frame (shielding plate support member)
19 Bracket 20 Support rod 21 Driving device 22 Rotating flange 23a First Al sputter target 23b Second Al sputter target 24 Gap between shielding plates 25 Wall lower surface 26 Gas introduction port 27 Drive shaft 30 Substrate 31 Substrate holder 32 MF power source 40 Rotating shaft 41 Bearing 42 Evaporation source 43 High frequency power supply 44 Evaporation power supply 45 DC power supply

Claims (7)

A film forming chamber having an exhaust port in the wall, an exhaust means for exhausting the inside of the film forming chamber through the exhaust port, and a predetermined opening ratio so as to cover the exhaust port A baffle disposed inside the film forming chamber, and a driving means for driving the baffle,
The baffle has a frame body and a plurality of shielding plates arranged with a gap in the frame body, and the driving means advances the baffle so as to cover the exhaust port and opens the exhaust port. A film deposition device that is retracted so as not to be covered. A film forming chamber having an exhaust port in the wall, an exhaust means for exhausting the inside of the film forming chamber through the exhaust port, and a predetermined opening ratio so as to cover the exhaust port A baffle disposed inside the film forming chamber, and a driving means for driving the baffle,
The baffle has a shielding plate disposed away from the wall portion so as to maintain an interval corresponding to the aperture ratio, and the driving means advances the baffle so as to cover the exhaust port and the A film deposition system that retreats so as not to cover the exhaust port.   A film forming chamber having an exhaust port in the wall, an exhaust means for exhausting the inside of the film forming chamber through the exhaust port, and a support disposed in the internal space and supporting the plurality of shielding plates and the shielding plate A film forming apparatus comprising a baffle made of a member and having a predetermined aperture ratio, and a driving device for driving the baffle, wherein the baffle is fixed to the support member in a state where the baffle is fixed to the supporting member. A film forming apparatus that moves the inside and outside of the area of the exhaust port.   The said baffle is provided with the some shielding board arrange | positioned through the clearance gap, The substantially whole area of the said exhaust port can be covered by the baffle which consists of the said clearance gap and the said shielding board. The film-forming apparatus of description.   The film forming apparatus according to claim 1, wherein a substrate and a film forming particle source that supplies a film material to the substrate are disposed inside the film forming chamber.   6. The film forming apparatus according to claim 5, wherein the film forming particle source is a sputtering target or an evaporation source.   The shielding plate is a strip-shaped plate, and the strip-shaped plate is arranged with the longitudinal end thereof fixed to the support member with the gap therebetween, and the exhaust port is covered with the baffle. When the baffle is projected from the evaporation source, the gap is concealed by the strip-shaped plate, and the film-forming particles discharged from the target or the evaporation source toward the exhaust port collide with the strip-shaped plate. Item 7. The film forming apparatus according to Item 6.

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