CN101921999B - Multiple-reaction cavity metallorganic chemical vapor deposition equipment - Google Patents
Multiple-reaction cavity metallorganic chemical vapor deposition equipment Download PDFInfo
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- CN101921999B CN101921999B CN 200910052992 CN200910052992A CN101921999B CN 101921999 B CN101921999 B CN 101921999B CN 200910052992 CN200910052992 CN 200910052992 CN 200910052992 A CN200910052992 A CN 200910052992A CN 101921999 B CN101921999 B CN 101921999B
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- reaction chamber
- delivery device
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 62
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 17
- 229910002804 graphite Inorganic materials 0.000 claims description 17
- 239000010439 graphite Substances 0.000 claims description 17
- 230000001105 regulatory effect Effects 0.000 claims description 4
- 230000007723 transport mechanism Effects 0.000 abstract 3
- 239000007789 gas Substances 0.000 description 32
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Abstract
The invention relates to multiple-reaction cavity metallorganic chemical vapor deposition equipment comprising a gas transport system, reaction cavities, a tail gas treatment system, heaters and a wafer fetch and transport mechanism. The equipment is characterized by comprising two or more than two reaction cavities; the reaction cavities are mutually connected by the gas transport system; the equipment is provided with the tail gas treatment system; each reaction cavity is connected with the tail gas treatment device; a control valve is arranged in a pipeline; the reaction cavities are arranged in glove boxes; the wafer fetch and transport mechanism is arranged among the glove boxes; both ends of the wafer fetch and transport mechanism are respectively provided with a valve; and each cavity is provided with one heater. The invention has the advantages that the equipment is provided with a plurality of reaction cavities, can complete various process manufactures in one step and switches to another growth process after one growth process is ended, and thereby, the processing time and the energy sources are saved, the efficiency is improved, the cost is reduced and the product quality is improved.
Description
Technical field
The present invention relates to a kind of semiconductor manufacturing facility, particularly a kind of multiple-reaction cavity metallorganic chemical vapor deposition equipment.
Background technology
Metal-organic chemical vapor deposition equipment (Metal Organic Chemical Deposition, be called for short MOCVD) be a kind of advanced person's vapor phase epitaxy technique, it is multidisciplinary that it integrates precision optical machinery, semiconductor material, vacuum electronic, hydromeehanics, optics, chemistry, computer, is high-end semiconductor material, the photoelectron specific equipment that a kind of level of automation is high, expensive, the technology integrated level is high.To be reactant gases carry via the gas transport system by carrier gas its principle of work takes reaction chamber to, well heater provides temperature reliable thermal boundary condition for the chemical reaction in reaction chamber, thereby reactant deposits thin film at generation chemical reaction on graphite plate on wafer.The component of film and growth velocity determine by the air-flow of various heterogeneities and the source flux of accurately controlling.MOCVD is as the epitaxially grown Perfected process of compound semiconductor materials; have that quality is high, good stability, good reproducibility, technique flexibly, can the mass-producing volume production etc. characteristics; become industry and produced the key core equipment of semiconductor photoelectric device and microwave device, had broad application prospects and industrialization value.
The MOCVD producer of main flow mainly contains two in the market: the Aixtron of Germany and the VECCO of the U.S..This equipment of two only has a reaction chamber usually, can not carry out simultaneously kinds of processes, due to the growth different layers film the time source composition and flow different, required temperature is also different, when carrying out another kind of technique like this after a kind of technique is completed, the time that waiting temperature rises or descends is longer, thereby causes higher cost.For example, during growth blue-light LED chip material, required temperature range is from 200 degrees centigrade to 1300 degrees centigrade, and generally all in tens degree, so large temperature range makes the waiting time between different process longer due to present well heater temperature rate.
Summary of the invention
The present invention is directed to the deficiency in prior art, proposed a kind of novel multiple-reaction cavity metallorganic chemical vapor deposition equipment, it can significantly improve the production efficiency of yield production type MOCVD equipment.the present invention includes: the gas transport system, reaction chamber, exhaust gas processing device, well heater, delivery device, exhaust treatment system is by control valve, the tail gas pipeline, vacuum pump, exhaust gas processing device forms, it is characterized in that: equipment has two or more reaction chambers, realized interconnecting by the gas transport system respectively between each reaction chamber, described equipment is provided with an exhaust gas processing device, each reaction chamber is connected with the entrance of exhaust gas processing device through pipe connecting, be provided with the control valve of a capable of regulating flow quantity in the connecting pipeline of each reaction chamber and exhaust gas processing device, reaction chamber is arranged on inside glove box, be provided with delivery device between glove box and glove box, the delivery device two ends respectively are provided with a valve, each reaction chamber is provided with one and overlaps independently well heater.
Each reaction chamber is only done a kind of technique, keeps specific flow and specific temperature.After the first technique is completed, utilize the mechanical manipulator of delivery device that graphite plate is transferred to second reaction chamber and carry out the second technique, the temperature in this moment second reaction chamber and the flow of source gas are ready to, can carry out immediately growth technique.After the second technique was completed, the mechanical manipulator of recycling delivery device was transferred to the 3rd reaction chamber with graphite plate and is carried out the third technique, by that analogy.
Advantage of the present invention is that this equipment has a plurality of reaction cavities, can one-stop operation carry out multiple gas-phase deposition manufacturing, composition and flow and the temperature in source during according to different growing film, complete the switching of carrying out another growth technique after being finished by a kind of growth technique, time, the energy of processing had both been saved, improve efficient, reduced again the quality of production cost raising product.
Description of drawings
Fig. 1 has the structural representation of the present invention of the metal-organic chemical vapor deposition equipment of three reaction chambers;
The structural representation of Fig. 2 reaction chamber.
In figure: the valve that the valve of the valve of 1 source gas, 2 gas transport pipelines, 3 delivery devices, 4 delivery devices, 5 delivery devices, 6 delivery devices are connected with the environment end, 7 reaction chambers, 8 exhaust gas processing devices, 9 vacuum pumps, 10 control valves, 11 tail gas pipelines, 12 valves, 13 valves, 14 source of the gas steel cylinders, 15 reaction cavity upper cover, 16 graphite plates, 17 well heaters, 18 reaction chamber lower covers, 19 nose cones, a glove box, b glove box, c glove box.
Embodiment
Further illustrate embodiments of the invention below in conjunction with accompanying drawing:
Referring to Fig. 1, equipment of the present invention has two or more reaction chambers 7, is realized interconnecting by the gas transport system respectively between each reaction chamber 7, and the equipment of the present embodiment has three reaction chambers 7.Three reaction chambers 7 are arranged on respectively in glove box a, glove box b, glove box c, and each reaction chamber 7 is comprised of reaction cavity upper cover 15, graphite plate 16, well heater 17, reaction chamber lower cover 18, nose cone 19.Reaction cavity upper cover 15 and reaction chamber lower cover 18 are detachable, satisfy mechanical manipulator and shift graphite plate 16 from reaction chamber 7, and nose cone 19 is quartz construction, can play insulation effect, thereby improve heat utilization efficiency, referring to Fig. 2.Exhaust treatment system is comprised of control valve 10, tail gas pipeline 11, vacuum pump 9, exhaust gas processing device 8, source gas 1 carries through gas transport pipeline 2 by carrier gas from source of the gas steel cylinder 14 and arrives in reaction chamber 7, and reacted tail gas is processed by exhaust gas processing device 8 by valve 10, tail gas pipeline 11, vacuum pump 9.Delivery device 4 is mechanical manipulator, glove box a, glove box b, glove box c are interconnection by delivery device 4, graphite plate 16 relies on mechanical manipulator to deliver transfer between glove box, delivery device 4 two ends respectively are provided with the valve 3 of a delivery device, the valve 5 of delivery device, to guarantee delivery device 4 and the pressure equilibrium of glove box and the switching between each growth technique.graphite plate 16 from the process that glove box a transfers to glove box b is: two adjacent glove box a glove box b are connected by delivery device 4, first open the valve 3 between glove box a and delivery device, make the interior pressure of delivery device 4 and the pressure equilibrium in glove box a, graphite plate 16 is transferred in delivery device 4 through mechanical manipulator, then close this valve 3, then open the valve 5 of delivery device and glove box b, make the interior pressure of delivery device 4 and the pressure equilibrium in glove box b, again graphite plate 16 in mechanical manipulator is transferred to glove box b, close at last this valve 5.Even the unequal transfer process that also can not affect whole graphite plate 16 of pressure in adjacent like this two glove boxes has increased processing range.The transfer process of glove box b and glove box c is also completed the transfer of graphite plate 16 by that analogy by delivery device 4, be connected with atmospheric environment at last.
because entering glove box, atmospheric environment may pollute equipment, so will carry out purifying treatment to the gas in delivery device 4, its process is as follows: open the valve 6 that delivery device 4 is connected with the environment end, close the valve 6 that delivery device 4 is connected with the environment end after putting into graphite plate 16, open valve 12, delivery device 4 is vacuumized, then shut-off valve 12 is opened valve 13 simultaneously, delivery device 4 is communicated with reaction chamber a, thereby make its pressure equilibrium, shut-off valve 13 is opened valve 12 and is vacuumized again, so circulation several times, until the gas in delivery device 4 reaches the purification requirement.
The present embodiment is when growing InGaN/GaN structure, the first step is at 1050 degrees centigrade of left and right growing n-type GaN, second step is that (growth temperature of building layer is 850 degrees centigrade of left and right to the growth multiple quantum well layer, the growth temperature of trap layer is 750 degrees centigrade of left and right), the 3rd step was at 850 degrees centigrade of left and right growing p-type GaN.At first at first reaction chamber a the inside growing n-type GaN, temperature is controlled at 1050 degrees centigrade of left and right by well heater; Then graphite plate 7 is transferred to second reaction chamber b growth Multiple Quantum Well, at this moment first reaction chamber can be placed the graphite plate that is mounted with new wafer and carries out the growth of N-shaped GaN; At last again the graphite plate of the multi-quantum pit structure of having grown in second reaction chamber b is transferred to the 3rd reaction chamber c and carry out the growth of p-type GaN, temperature is controlled at 850 degrees centigrade of left and right by well heater.
The equipment of the present embodiment is provided with an exhaust gas processing device 8, each reaction chamber 7 is connected through the entrance of tail gas pipeline 11 with exhaust gas processing device 8, share a vacuum pump 9 on tail gas pipeline 11, be provided with the control valve 10 of a capable of regulating flow quantity in the connecting pipeline of each reaction chamber 7 and exhaust gas processing device, reaction chamber 7 all is provided with one and overlaps independently well heater 17.Keep the pumping speed of vacuum pump constant, only need to regulate pressure in each reaction chamber by the aperture of regulating its control valve 10, make it satisfy different processing requirements.
Claims (1)
1. multiple-reaction cavity metallorganic chemical vapor deposition equipment, comprise: the gas transport system, reaction chamber, exhaust treatment system, well heater, delivery device, exhaust treatment system is by control valve, the tail gas pipeline, vacuum pump, exhaust gas processing device forms, it is characterized in that: equipment has two or more reaction chambers, realized interconnecting by the gas transport system respectively between each reaction chamber, each reaction chamber is connected with the entrance of exhaust gas processing device through pipe connecting, be provided with the control valve of a capable of regulating flow quantity in the connecting pipeline of each reaction chamber and exhaust gas processing device, reaction chamber is arranged on inside glove box, be provided with delivery device between glove box and glove box, the delivery device two ends respectively are provided with a valve, each reaction chamber is provided with one and overlaps independently well heater, described delivery device is mechanical manipulator, interconnection by delivery device between glove box, graphite plate is shifted between glove box by mechanical manipulator, the delivery device two ends are equipped with valve, to guarantee delivery device and the pressure equilibrium of glove box and the switching between each growth technique.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910052992 CN101921999B (en) | 2009-06-12 | 2009-06-12 | Multiple-reaction cavity metallorganic chemical vapor deposition equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910052992 CN101921999B (en) | 2009-06-12 | 2009-06-12 | Multiple-reaction cavity metallorganic chemical vapor deposition equipment |
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| CN101921999A CN101921999A (en) | 2010-12-22 |
| CN101921999B true CN101921999B (en) | 2013-11-06 |
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Families Citing this family (12)
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|---|---|---|---|---|
| US20120222813A1 (en) * | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Vacuum chambers with shared pump |
| CN103590004A (en) * | 2012-08-15 | 2014-02-19 | 苏州宏久航空防热材料科技有限公司 | Plasma physical and chemical codeposition apparatus and deposition method thereof |
| CN103540914B (en) * | 2013-09-24 | 2016-06-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of tub CVD equipment reative cell using radio frequency heating |
| CN106282968B (en) * | 2015-05-21 | 2018-07-13 | 北大方正集团有限公司 | Equipment for chemical vapor deposition method |
| CN105161573B (en) * | 2015-09-17 | 2017-03-22 | 浙江师范大学 | System and method for preparing hydrogenated nanocrystalline silicon film solar cell |
| CN107587189A (en) * | 2017-09-26 | 2018-01-16 | 中国科学院长春光学精密机械与物理研究所 | A kind of multi-chamber nitride material epitaxial system of integrated Technology for Heating Processing |
| CN109023305A (en) * | 2018-08-28 | 2018-12-18 | 湖南红太阳光电科技有限公司 | The Tubular PECVD device of resource sharing between a kind of pipe |
| KR20210053351A (en) * | 2018-09-28 | 2021-05-11 | 램 리써치 코포레이션 | Vacuum pump protection from deposition by-product buildup |
| CN109355639B (en) * | 2018-11-16 | 2020-07-17 | 四川大学 | Solid lubricating coating device for gear tooth surface |
| CN114965866B (en) * | 2021-02-24 | 2023-09-08 | 中国科学院物理研究所 | System for measuring physical properties of a material |
| CN113403609B (en) * | 2021-06-16 | 2023-08-15 | 苏州矩阵光电有限公司 | MOCVD cavity structure control method |
| CN113560763A (en) * | 2021-08-17 | 2021-10-29 | 烟台华创智能装备有限公司 | Glove box automatic feeding unloading seal welding system |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1657650A (en) * | 2004-12-21 | 2005-08-24 | 中国科学技术大学 | High-temp. organic metal chemical vapor deposition device with connected multi-reaction chamerbers |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1657650A (en) * | 2004-12-21 | 2005-08-24 | 中国科学技术大学 | High-temp. organic metal chemical vapor deposition device with connected multi-reaction chamerbers |
Non-Patent Citations (1)
| Title |
|---|
| JP特开平8-213328A 1996.08.20 |
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| CN101921999A (en) | 2010-12-22 |
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Effective date of registration: 20240201 Address after: 528251, Zone C, 1st Floor, No. 5 Pingzhou Nangang Street, Guicheng Street, Nanhai District, Foshan City, Guangdong Province Patentee after: Guangdong Zhongyuan Semiconductor Technology Co.,Ltd. Country or region after: China Address before: 430074 Hubei city of Wuhan province Luo Yu Road, No. 1037 Patentee before: Gan Zhiyin Country or region before: China |