CN1657650A - High-temp. organic metal chemical vapor deposition device with connected multi-reaction chamerbers - Google Patents
High-temp. organic metal chemical vapor deposition device with connected multi-reaction chamerbers Download PDFInfo
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- CN1657650A CN1657650A CN 200410065874 CN200410065874A CN1657650A CN 1657650 A CN1657650 A CN 1657650A CN 200410065874 CN200410065874 CN 200410065874 CN 200410065874 A CN200410065874 A CN 200410065874A CN 1657650 A CN1657650 A CN 1657650A
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Abstract
A high-temp chemical vapor deposition apparatus with communicated multiple reaction chambers for organic metal is composed of gas channel system, at least two reaction chambers with specimen heater, specimen feeding unit, delivering pipeline system, vacuumizing system, tail gase treating and alarm system and operation control system. It features that each reaction chamber can be specially designed according to the requirement of individual MOCVD system to material.
Description
Technical field
The present invention relates to the improvement of chemical gas phase chemical deposition (CVD) or MOCVD (MOCVD) device.
Technical background
MOCVD method (Metal Organic Chemical Vapor Deposition, be called for short MOCVD) is a kind of advanced person's of growing up in the later stage seventies in last century a vapor phase epitaxy technique, is widely used in the preparation of multiple thin-film material.Especially in field of semiconductor materials, it and molecular beam epitaxy (MBE) become the means that dominate side by side in the preparation of compound semiconductor film.
Existing organic metal chemical vapor deposition device (MOCVD) partly is made up of the air-channel system that reactant gases and organometallic sources are provided, reaction chamber, sample feeding mechanism, conveying pipe system, vacuum unit, vent gas treatment and warning and operation control system etc.MOCVD equipment can be used for large-area film growth, and the material ranges that is suitable for is wide, therefore, is widely used in scientific research and industrial production at present.
Usually, a MOCVD equipment only is equipped with a reaction chamber, that is to say MOCVD equipment thin-film material with a kind of series that can only be used for growing.Common has: the AlGaAs/GaAs of III-V family, GaAs base systems such as GaAsP/GaAs row, AlGaN/GaN, GaN base systems such as InGaN/GaN row, the Si/Ge series of IV family, the ZnS of II-VI family and ZnSe series etc.In recent years, the research of wide bandgap semiconductor thin-film material becomes very active problem, as GaN, zinc oxide and silicon carbide etc.Because the body monocrystalline of semiconductor material with wide forbidden band is difficult to preparation, price is very expensive, makes that the cost of iso-epitaxy is too high.From point of view of application, need to adopt the lower hetero epitaxy of price.Because the growth conditions difference of different series material is bigger, same reaction chamber is difficult to satisfy the requirement of differing materials growth; And growth different series material might cause crossed contamination in same reaction chamber.For example: the epitaxial growth temperature of zinc-oxide film is generally 600 ℃, the epitaxially grown temperature of carborundum films is up to 1400 ℃, difference of them is very big, the oxygen that exists in the growth of simultaneous oxidation zinc is the critical defect that influences growth of silicon carbide, and the hydrogen that epitaxial silicon carbide is used is the reductive agent of zinc oxide, thereby zinc oxide and silicon carbide can not be grown in same reaction chamber.Though also have some device to have a plurality of reaction chambers at present, generally all be isolated separately system, can not be communicated with the hybrid multilayer film of can not growing between the differential responses chamber.Material range of choice when above-mentioned situation has limited and carried out hetero epitaxy with common MOCVD equipment.In addition, the substrate heating temperature of existing MOCVD equipment is the highest can only to reach 1300 ℃, is lower than the material that some needs high growth temperature, and for example the needed temperature of epitaxial silicon carbide is 1400 ℃.
Summary of the invention
The objective of the invention is to,, expand the function of MOCVD equipment, make its can be used for growing two kinds and two or more heterogeneous structure material at not enough in the prior art.
Purpose of the present invention realizes in the following manner.
Communication type multi-reaction chamber high temperature organic metal chemical vapor deposition device of the present invention, comprise air-channel system of the prior art, reaction chamber, sample feeding mechanism, transport piping system, vacuum unit, vent gas treatment and warning and operation control system, be provided with the sample heating arrangements in the described reaction chamber, it is characterized in that, described reaction chamber has two at least, each reaction chamber is respectively equipped with sample feeding mechanism or shared sample feeding mechanism, and each reaction chamber is communicated with air-channel system, vacuum system respectively; Be communicated with by conveying pipe between reaction chamber and the reaction chamber, on this conveying pipe, also be provided with the switch-valve that to control unlatching, to close, for example push-pull valve etc.The sample heating arrangements that is provided with in the described reaction chamber, by the resistance heater of the graphite flake that is arranged on substrate holder below and the thermoshield cover around being enclosed in constitute.
Communication type multi-reaction chamber high temperature organic metal chemical vapor deposition device of the present invention is provided with a plurality of reaction chambers, and opens and closes by opening-closing valve control between the reaction chamber.When valve closes, each reaction chamber is all formed independently MOCVD system with corresponding pipeline and vacuum unit.Therefore, the indoor system design of differential responses can design the difference requirement of differing materials by MOCVD system independently, thereby can be used for the diverse thin-film material of growth properties respectively.Behind the valve open between the reaction chamber, be interconnected between the reaction chamber, realize the transmission of epitaxial wafer between different reaction chambers by shared sample feeding mechanism and mechanical manipulator, be used to grow different series, might cause the thin-film material of crossed contamination, reach the multilayer film heterojunction structure of forming by these materials, can only be used for growing with a kind of defective of thin-film material of series thereby overcome same MOCVD equipment, expand the functions of use of MOCVD equipment.
Communication type multi-reaction chamber high temperature organic metal chemical vapor deposition device of the present invention, because its sample heating device adopts the resistive heating mode of graphite flake, and around well heater and substrate holder, be provided with the thermoshield cover, improved Heating temperature greatly, substrate temperature among the existing MOCVD is the highest can only to reach 1300 ℃, and use graphite flake resistive heating mode of the present invention, its substrate temperature to can reach 1600 ℃.From this respect, also further expanded the functions of use of MOCVD equipment, for example the needed temperature of epitaxial silicon carbide is about 1400 ℃, just can reach easily.This has also just solved in same MOCVD device the difficult problem of not only developing zinc oxide but also growing silicon carbide and zinc oxide/silicon carbide structure material.
Utilize the communication type dual-reaction chamber high temperature MOCVD device of the present invention that has built up, carry out the test of developing zinc oxide and silicon carbide on the Si substrate, the Heating temperature of its silicon carbide substrate reaches 1400 ℃.This equipment successfully grows area on the Si substrate be 1.5 inches, and thickness is 1 micron carborundum films, and silicon carbide (111) peak only appears in its X-ray diffraction, and the rocking curve half-breadth is 2.6 °; And on this carborundum films, grow area and be 1.5 inches, only zinc oxide (002) diffraction peak, its rocking curve half-breadth are arranged less than 2 ° zinc-oxide film (ZnO/SiC/Si).Can find out that thus this device reaches the service requirements of epitaxial silicon carbide fully.
Be further described below by embodiment and accompanying drawing thereof.
Description of drawings
Fig. 1 is the structural representation of a kind of embodiment with high temperature organic metal chemical vapor deposition device of two reaction chambers.
Fig. 2 is the embodiment synoptic diagram of the sample heating arrangements that is provided with in reaction chamber of the present invention.
Fig. 3 is the resistance heater that is arranged on the graphite flake of substrate holder below in the sample heating arrangements of the present invention
The example structure synoptic diagram.
Embodiment
Among Fig. 1,1 is air-channel system, and 2 is first reaction chamber, and 4 for sample presets the chamber, and 6 is sample feeding mechanism, and 7 is vent gas treatment and warning, and 9 is the vacuum unit, and this six part is the permanent organization in the existing MOCVD device.They are in aggregates by transporting pipeline connection, respectively by valve 3,5,8,10 controls.13 second reaction chambers that increase for the present invention, this reaction chamber is communicated with by pipeline and first reaction chamber and air-channel system 1, vacuum unit 9, and by valve 14 control open and close, valve 12 is controlled being communicated with of second reaction chamber and vacuum unit between two reaction chambers.In first reaction chamber and second reaction chamber, be respectively equipped with sample heating arrangements 11.
In the present embodiment, two shared sample feeding mechanisms of reaction chamber.Therefore, what be communicated with the two transports pipeline and sample feeding mechanism coaxial line, so that sample is delivered in second reaction chamber.Also can set up sample again in the practical application and preset chamber and sample feeding mechanism in the side in addition of second reaction chamber.
Among Fig. 2, the 15th, the substrate holder of placing sample, its fixed form is same as the prior art.The 18th, the resistive heating sheet that graphite flake constitutes is fixed with two conductors and also draws respectively outside the reaction chamber on this heating piece, and its end is provided with the external tapping 17 with power connection.Because graphite flake can be high temperature resistant, so the temperature of substrate holder 15 nearby can reach 1600 ℃, to satisfy the needs of different service requirementss.The 16th, the annular thermoshield cover around being enclosed in, this thermoshield is covered with and is beneficial to the insulation that is placed on the sample in the substrate holder.
Referring to Fig. 3, the graphite resistance heating piece in the described resistance heater is designed to the multiple tracks circular concentric, and starting material are also saved in convenient processing.
Claims (3)
1. communication type multi-reaction chamber high temperature organic metal chemical vapor deposition device, comprise air-channel system of the prior art, reaction chamber, sample feeding mechanism, transport piping system, vacuum unit, vent gas treatment and warning and operation control system, be provided with the sample heating arrangements in the described reaction chamber, it is characterized in that, described reaction chamber has two at least, each reaction chamber is respectively equipped with sample feeding mechanism, and each reaction chamber is communicated with air-channel system, vacuum system respectively; Be communicated with by conveying pipe between reaction chamber and the reaction chamber, this conveying pipe is provided with the switch-valve that can control unlatching, close.
2. communication type multi-reaction chamber high temperature organic metal chemical vapor deposition device as claimed in claim 1 is characterized in that described reaction chamber has two at least, the shared sample feeding mechanism of each reaction chamber.
3. communication type multi-reaction chamber high temperature organic metal chemical vapor deposition device as claimed in claim 1, it is characterized in that, the sample heating arrangements that is provided with in the described reaction chamber, by the resistance heater of the graphite flake that is arranged on substrate holder below and the thermoshield cover around being enclosed in constitute.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200410065874 CN1657650A (en) | 2004-12-21 | 2004-12-21 | High-temp. organic metal chemical vapor deposition device with connected multi-reaction chamerbers |
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| CN 200410065874 CN1657650A (en) | 2004-12-21 | 2004-12-21 | High-temp. organic metal chemical vapor deposition device with connected multi-reaction chamerbers |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101892467A (en) * | 2010-06-18 | 2010-11-24 | 北京大学 | Integrating multi-reaction chamber flow process epitaxial growth method and system |
| CN101899650A (en) * | 2010-04-30 | 2010-12-01 | 苏州索乐机电设备有限公司 | Substrate heating furnace of MOCVD |
| CN101921999B (en) * | 2009-06-12 | 2013-11-06 | 甘志银 | Multiple-reaction cavity metallorganic chemical vapor deposition equipment |
| CN110079792A (en) * | 2019-05-29 | 2019-08-02 | 无锡盈芯半导体科技有限公司 | Bilateral symmetry formula CVD system |
-
2004
- 2004-12-21 CN CN 200410065874 patent/CN1657650A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101921999B (en) * | 2009-06-12 | 2013-11-06 | 甘志银 | Multiple-reaction cavity metallorganic chemical vapor deposition equipment |
| CN101899650A (en) * | 2010-04-30 | 2010-12-01 | 苏州索乐机电设备有限公司 | Substrate heating furnace of MOCVD |
| CN101892467A (en) * | 2010-06-18 | 2010-11-24 | 北京大学 | Integrating multi-reaction chamber flow process epitaxial growth method and system |
| CN101892467B (en) * | 2010-06-18 | 2012-01-18 | 北京大学 | Integrating multi-reaction chamber flow process epitaxial growth method and system |
| CN110079792A (en) * | 2019-05-29 | 2019-08-02 | 无锡盈芯半导体科技有限公司 | Bilateral symmetry formula CVD system |
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