CN110079792A - Bilateral symmetry formula CVD system - Google Patents
Bilateral symmetry formula CVD system Download PDFInfo
- Publication number
- CN110079792A CN110079792A CN201910455359.0A CN201910455359A CN110079792A CN 110079792 A CN110079792 A CN 110079792A CN 201910455359 A CN201910455359 A CN 201910455359A CN 110079792 A CN110079792 A CN 110079792A
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- China
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- setting
- out cavity
- connecting tube
- heating furnace
- transfer bar
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention relates to a kind of bilateral symmetry formula CVD systems, the right part of left setting-out cavity and the left part of connecting tube are fixedly linked, the right part of connecting tube and the left part of right setting-out cavity are fixedly linked, left heating furnace and right heating furnace are equipped in the outside of connecting tube, left slider and left driver are equipped in the left side of left setting-out cavity, left slider is driven by left driver, left sample transfer bar is fixed on left slider, left sample transfer bar protrudes into left setting-out cavity and connecting tube, right sliding block and right heating furnace are equipped on the right side of right setting-out cavity, right sliding block is driven by right heating furnace, right sample transfer bar is fixed on right sliding block, right sample transfer bar protrudes into right setting-out cavity and connecting tube.The present invention has many advantages, such as that structure is simple, high degree of automation, work efficiency is high；The present invention realizes flexible sample introduction.
Description
Technical field
The present invention relates to a kind of system of two-dimensional material deposition growing, specifically a kind of bilateral symmetry formula CVD system
System.
Background technique
Currently, existing CVD(, that is, chemical vapor deposition) system is by left heating furnace 16, right driver 21, right setting-out cavity
22, the components such as right sliding block 23, right sample transfer bar 25, right heating furnace 26, connecting tube 7 and left flange 8 are constituted, it is asymmetric CVD
System, can only semi-automatic or hand sampling, this CVD system working efficiency is lower.
Summary of the invention
The purpose of the present invention is overcoming the deficiencies in the prior art, provide a kind of simple structure, high degree of automation,
Work efficiency is high, can flexibly sample introduction bilateral symmetry formula CVD system.
According to technical solution provided by the invention, the bilateral symmetry formula CVD system, it includes left driver, left setting-out
Cavity, left slider, left sample transfer bar, left heating furnace, right driver, right setting-out cavity, right sliding block, right sample transfer bar, right heating furnace with
Connecting tube；The right part of the left setting-out cavity and the left part of connecting tube are fixedly linked, the right part of connecting tube and right setting-out
The left part of cavity is fixedly linked, and left heating furnace and right heating furnace is equipped in the outside of connecting tube, in the left side of left setting-out cavity
Equipped with left slider and left driver, left slider is driven by left driver, and left sample transfer bar is fixed on left slider, and left sample transfer bar is stretched
Enter in left setting-out cavity and connecting tube, right sliding block and right heating furnace is equipped on the right side of right setting-out cavity, right sliding block is by right heating furnace
Driving, is fixed with right sample transfer bar on right sliding block, and right sample transfer bar protrudes into right setting-out cavity and connecting tube.
Left support ring is equipped in left setting-out cavity, the left sample transfer bar passes through left support ring.
Right support ring is equipped in right setting-out cavity, the right sample transfer bar passes through right support ring.
The present invention has many advantages, such as that structure is simple, high degree of automation, work efficiency is high；The present invention realize flexibly into
Sample.
Detailed description of the invention
Fig. 1 is system construction drawing of the invention.
Fig. 2 is the system construction drawing of the prior art.
Specific embodiment
The present invention is further explained in the light of specific embodiments.
Bilateral symmetry formula CVD system of the invention, it includes that left driver 11, left setting-out cavity 12, left slider 13, a left side are sent
Sample bar 15, left heating furnace 16, right driver 21, right setting-out cavity 22, right sliding block 23, right sample transfer bar 25, right heating furnace 26 and company
Adapter tube 7；The right part of the left setting-out cavity 12 and the left part of connecting tube 7 are fixedly linked, and right part and the right side of connecting tube 7 are put
The left part of sample cavity 22 is fixedly linked, and left heating furnace 16 and right heating furnace 26 is equipped in the outside of connecting tube 7, in left setting-out chamber
The left side of body 12 is equipped with left slider 13 and left driver 11, and left slider 13 is driven by left driver 11, fixed on left slider 13
There is left sample transfer bar 15, left sample transfer bar 15 protrudes into left setting-out cavity 12 in connecting tube 7, right cunning is equipped on the right side of right setting-out cavity 22
Block 23 and right heating furnace 26, right sliding block 23 are driven by right heating furnace 26, and right sample transfer bar 25, right sample presentation are fixed on right sliding block 23
Bar 25 protrudes into right setting-out cavity 22 and connecting tube 7.
Left support ring 14 is equipped in left setting-out cavity 12, the left sample transfer bar 15 passes through left support ring 14.
Right support ring 24 is equipped in right setting-out cavity 22, the right sample transfer bar 25 passes through right support ring 24.
When work, setting-out can be carried out by opening left setting-out cavity 12, and left driver 11 can drive left slider 13, so that left
Sliding block 13 and the left sample transfer bar 15 or so being mounted on left slider 13 translation；Setting-out can be carried out by opening right setting-out cavity 22,
Right driver 21 can drive right sliding block 23, so that right sliding block 23 and the right sample transfer bar 25 or so being mounted on right sliding block 23 are flat
It moves.Left heating furnace 16 realizes chemical vapor deposition after carrying out heating and gasifying to sample with right heating furnace 26.
Bilateral symmetry formula CVD system of the invention, may be implemented the setting-out of left setting-out cavity 12 and right setting-out cavity 22 with
And sample introduction.
Bilateral symmetry formula CVD system of the invention, may be implemented sample introduction flexibility, and the left setting-out chamber of programming Control may be implemented
The growth response (source) of body 12, the growth response (source) of right setting-out cavity 22, such as can be simultaneously into the time of furnace body reaction zone
Just into, can Zuo Yuanxian, be that sample injection time can program in a word behind behind the right source or source right source Xian Zuo.
Bilateral symmetry formula CVD system of the invention may be implemented entirely from automatic sampling, high degree of automation.
Claims (3)
1. a kind of bilateral symmetry formula CVD system, it includes that left driver (11), left setting-out cavity (12), left slider (13), a left side are sent
Sample bar (15), left heating furnace (16), right driver (21), right setting-out cavity (22), right sliding block (23), right sample transfer bar (25), the right side
Heating furnace (26) and connecting tube (7)；It is characterized in that: the left part of the right part of the left setting-out cavity (12) and connecting tube (7)
It is fixedly linked, the right part of connecting tube (7) and the left part of right setting-out cavity (22) are fixedly linked, in the outside of connecting tube (7)
Equipped with left heating furnace (16) and right heating furnace (26), left slider (13) and left driver are equipped in the left side of left setting-out cavity (12)
(11), left slider (13) is driven by left driver (11), and left sample transfer bar (15), left sample transfer bar are fixed on left slider (13)
(15) it protrudes into left setting-out cavity (12) and connecting tube (7) is interior, right sliding block (23) are equipped on the right side of right setting-out cavity (22) and are added with right
Hot stove (26), right sliding block (23) are driven by right heating furnace (26), and right sample transfer bar (25), right sample presentation are fixed on right sliding block (23)
Bar (25) protrudes into right setting-out cavity (22) and connecting tube (7).
2. bilateral symmetry formula CVD system as described in claim 1, it is characterized in that: being equipped with left branch in left setting-out cavity (12)
Pushing out ring (14), the left sample transfer bar (15) pass through left support ring (14).
3. bilateral symmetry formula CVD system as described in claim 1, it is characterized in that: being equipped with right branch in right setting-out cavity (22)
Pushing out ring (24), the right sample transfer bar (25) pass through right support ring (24).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910455359.0A CN110079792A (en) | 2019-05-29 | 2019-05-29 | Bilateral symmetry formula CVD system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910455359.0A CN110079792A (en) | 2019-05-29 | 2019-05-29 | Bilateral symmetry formula CVD system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110079792A true CN110079792A (en) | 2019-08-02 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910455359.0A Withdrawn CN110079792A (en) | 2019-05-29 | 2019-05-29 | Bilateral symmetry formula CVD system |
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0835068A (en) * | 1994-07-20 | 1996-02-06 | Iwasaki Electric Co Ltd | Cvd apparatus and film formation using cvd apparatus |
| CN1224085A (en) * | 1998-12-25 | 1999-07-28 | 清华大学 | Superhigh vacuum chemical vapor phase deposition epitoxy system |
| CN1657650A (en) * | 2004-12-21 | 2005-08-24 | 中国科学技术大学 | High-temp. organic metal chemical vapor deposition device with connected multi-reaction chamerbers |
| CN203772878U (en) * | 2014-03-28 | 2014-08-13 | 鹤壁市科奥仪器仪表制造有限公司 | Sample sending mechanism for sulfur detector |
| CN105092870A (en) * | 2014-09-25 | 2015-11-25 | 长沙开元仪器股份有限公司 | Element tester |
| CN105752968A (en) * | 2016-01-31 | 2016-07-13 | 安徽贝意克设备技术有限公司 | Reel-to-reel continuous graphene film growth equipment |
| CN205473973U (en) * | 2016-03-09 | 2016-08-17 | 无锡盈芯半导体科技有限公司 | Chemical vapor deposition equipment based on pulsating gas flow growth molybdenum disulfide film |
| CN206146955U (en) * | 2016-11-03 | 2017-05-03 | 广州瑞科基因科技有限公司 | Biochip sample presentation mechanism |
| CN108203814A (en) * | 2018-03-14 | 2018-06-26 | 中国科学技术大学 | The device of dual cavity is pollution-free chemical vapor deposition two-dimensional material hetero-junctions |
| CN210261994U (en) * | 2019-05-29 | 2020-04-07 | 无锡盈芯半导体科技有限公司 | Bilateral symmetry formula CVD system |
-
2019
- 2019-05-29 CN CN201910455359.0A patent/CN110079792A/en not_active Withdrawn
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0835068A (en) * | 1994-07-20 | 1996-02-06 | Iwasaki Electric Co Ltd | Cvd apparatus and film formation using cvd apparatus |
| CN1224085A (en) * | 1998-12-25 | 1999-07-28 | 清华大学 | Superhigh vacuum chemical vapor phase deposition epitoxy system |
| CN1657650A (en) * | 2004-12-21 | 2005-08-24 | 中国科学技术大学 | High-temp. organic metal chemical vapor deposition device with connected multi-reaction chamerbers |
| CN203772878U (en) * | 2014-03-28 | 2014-08-13 | 鹤壁市科奥仪器仪表制造有限公司 | Sample sending mechanism for sulfur detector |
| CN105092870A (en) * | 2014-09-25 | 2015-11-25 | 长沙开元仪器股份有限公司 | Element tester |
| CN105752968A (en) * | 2016-01-31 | 2016-07-13 | 安徽贝意克设备技术有限公司 | Reel-to-reel continuous graphene film growth equipment |
| CN205473973U (en) * | 2016-03-09 | 2016-08-17 | 无锡盈芯半导体科技有限公司 | Chemical vapor deposition equipment based on pulsating gas flow growth molybdenum disulfide film |
| CN206146955U (en) * | 2016-11-03 | 2017-05-03 | 广州瑞科基因科技有限公司 | Biochip sample presentation mechanism |
| CN108203814A (en) * | 2018-03-14 | 2018-06-26 | 中国科学技术大学 | The device of dual cavity is pollution-free chemical vapor deposition two-dimensional material hetero-junctions |
| CN210261994U (en) * | 2019-05-29 | 2020-04-07 | 无锡盈芯半导体科技有限公司 | Bilateral symmetry formula CVD system |
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Effective date of registration: 20191225 Address after: Room 1022, building 1, No. 311, Yanxin Road, Huishan Economic Development Zone, Wuxi City, Jiangsu Province Applicant after: Wuxi Feiman Technology Co.,Ltd. Address before: 214187 Building 1, Cai Zhi Plaza, 311 Yan new road, Huishan Economic Development Zone, Wuxi, Jiangsu. Applicant before: WUXI FLEXSEMI SEMICONDUCTOR TECHNOLOGY CO.,LTD. |
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Application publication date: 20190802 |