CN103088414A - Vapor-phase epitaxy deposition apparatus realizing nitride crystal homoepitaxy - Google Patents
Vapor-phase epitaxy deposition apparatus realizing nitride crystal homoepitaxy Download PDFInfo
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- CN103088414A CN103088414A CN201110341401XA CN201110341401A CN103088414A CN 103088414 A CN103088414 A CN 103088414A CN 201110341401X A CN201110341401X A CN 201110341401XA CN 201110341401 A CN201110341401 A CN 201110341401A CN 103088414 A CN103088414 A CN 103088414A
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Abstract
The invention relates to a vapor-phase epitaxy deposition apparatus realizing nitride crystal homoepitaxy. The device comprises a metal chloride supply chamber and a vapor-phase epitaxy reaction chamber. A heating device and a ventilation pipe are arranged outside the supply chamber. A quartz vessel is arranged inside supply chamber for accommodating a metal source. A reaction gas feeding device is arranged on the upper part of the vapor-phase epitaxy reaction chamber. A sheet carrier palate is arranged inside the vapor-phase epitaxy reaction chamber and is used for accommodating substrate materials. Heating devices are arranged above and below the sheet carrier plate. The device provided by the invention has the advantage that the heating devices are arranged above and below the sheet carrier plate, such that temperature gradient distribution in the reaction chamber is changed. Advantages of hydride vapor-phase epitaxy and metal organics chemical vapor-phase epitaxy are composed, such that nitride hydride epitaxy and metal organics epitaxy are realized in a same reaction chamber. Therefore, thick film and thin film epitaxial growth are realized, and homoepitaxy is realized. The invention can also be used in a process for improving an independent metal organics epitaxy process through changing the temperature gradient in the reaction chamber. Therefore, nitride crystal quality can be improved, and device performance can be improved.
Description
Technical field
The invention belongs to technical field of semiconductors, relate to a kind of vapour phase epitaxy deposition apparatus of realizing nitride iso-epitaxy.
Background technology
The characteristics such as the nitride material take gan (GaN) based compound as representative has the energy bandwidth, saturated electrons speed is high, voltage breakdown is large, specific inductivity is little.For GaN, its stable chemical nature, high temperature resistant, corrosion-resistant, be very suitable for making radioprotective, high frequency, high-power and superintegrated electron device and indigo plant, green glow and ultraviolet photoelectron device, so the GaN base compound material has become the study hotspot of develop rapidly at present.
The growth method of GaN base semiconductor material mainly contains the methods such as gas phase epitaxy of metal organic compound sedimentation (MOCVD), hydride gas-phase epitaxy sedimentation (HVPE) and molecular beam epitaxy (MBE).Wherein MOCVD is one of the most frequently used technology, has that crystal mass is high, an advantage such as good uniformity, simple to operate, easy control.The HVPE method has the very high speed of growth, per hour can reach dozens or even hundreds of micron, extremely be suitable for the thick film GaN substrate of growing, but because growth velocity is fast, epitaxial film cracks easily, and homogeneity has much room for improvement also.MBE method growth velocity is slow, produces at present upper few the employing.
At present, the topmost problem that faces of nitride material growth is to lack suitable substrate.Because directly synthetic GaN monocrystalline is more difficult, need the condition of High Temperature High Pressure, and the monocrystalline size that grows out is little, can not satisfy the requirement of production.Therefore, present business-like GaN base device is substantially all to adopt hetero epitaxy, the substrate material that uses mainly contains sapphire, silicon carbide and silicon etc., lattice mismatch and thermal mismatching between these substrates and GaN material are larger, cause having larger stress in material and producing higher dislocation desity, be unfavorable for the raising of GaN base device performance.If can carry out isoepitaxial growth on GaN, just reduce injection defect largely, make performance of devices that huge leap be arranged.The method of growing GaN body monocrystalline mainly comprises high temperature and high pressure method, subliming method, Na fusion-crystallization method and hydride vapour phase epitaxy method at present, wherein first three methods all has high requirements to equipment and process, and be difficult to realize large size GaN monocrystalline, can't satisfy business-like requirement, and hydride gas-phase epitaxy (HVPE) technology has the advantages such as equipment is simple, cost is low, fast growth, has become growing GaN thick film effective means the most.
If utilize HVPE and MOCVD advantage separately, the GaN thick film of growing high-quality also carries out iso-epitaxy take it as substrate, just can greatly improve the quality of element nitride crystal, improves device performance.
Summary of the invention
The purpose of this invention is to provide a kind of vapour phase epitaxy deposition apparatus of realizing element nitride crystal iso-epitaxy.
For achieving the above object, vapour phase epitaxy deposition apparatus provided by the invention comprises: a metal chloride supply chamber and an organometallics vapour phase epitaxy reaction chamber (are called for short: the vapour phase epitaxy reaction chamber); Wherein: metal chloride is supplied the outside, chamber and is provided with heating unit; This outside, supply chamber is provided with breather line, passes into the carrier gas such as hcl reaction gas or hydrogen, nitrogen; This inside, supply chamber is provided with a quartz boat to place source metal, makes hydrogenchloride react with it the generation metal chloride; This supply chamber is provided with reactant gases and carrier gas passage, and the metal chloride reactant gases of generation carries by carrier gas and enters the growth of carrying out nitride material in the vapour phase epitaxy reaction chamber; Organometallics vapour phase epitaxy reaction chamber bottom is provided with the slide glass dish in a bearing metal source to place substrate material; Vapour phase epitaxy reaction chamber top is provided with a reactant gases diffuser, can make organism reactant gases, group V source reactant gases such as the doped source gases such as ammonia and silane of gallium, indium, magnesium, aluminium enter reaction chamber, reactant gas flow is reacted the growing nitride material to substrate surface; Slide glass dish below and top are provided with heating unit with the temperature gradient distribution of inside, conditioned reaction chamber, to satisfy simultaneously hydride gas-phase epitaxy and the needed reaction conditions of metal organic-matter chemical vapour phase epitaxy in reaction chamber.
The heating unit of slide glass dish top can be by the high temperature material manufacturing in described vapour phase epitaxy reaction chamber, as uses different metal material: tungsten, tantalum etc.; The heating unit of the heating unit of slide glass dish top is the netted layout of determinant.
Advantage of the present invention is to change temperature gradient distribution in reaction chamber by heating unit is set in slide glass dish above and below, in conjunction with hydride gas-phase epitaxy and metal organic-matter chemical vapour phase epitaxy advantage separately, can realize hydride gas-phase epitaxy and metal oxide vapour phase epitaxy in same reaction chamber, thus the iso-epitaxy of realization.This scheme also can independently be used on metal organic chemical compound vapor deposition equipment, by changing the thermograde on substrate slice, greatly improves quality and the speed of growth of element nitride crystal, improves the performance of organometallics vapour phase epitaxy equipment.
Description of drawings
Fig. 1 is the design diagram of apparatus of the present invention;
Fig. 2 is the heating unit schematic diagram in embodiment two;
Fig. 3 is the heating unit schematic diagram in embodiment three;
Fig. 4 is the heating unit schematic diagram in embodiment four;
Fig. 5 is the heating unit schematic diagram in embodiment five.
in figure: 1 intake ducting, 2 intake ductings, 3 metal chlorides are supplied the chamber, 4 heating units, 5 source metal, 6 quartz boats, the gas pipeline of 7 metal chlorides, 8 organometallics vapour phase epitaxy reaction chambers, 9 reactant gases diffusers, 10 heating units, 11 slide glass dishes, 12 heating units, 13 air outlets, 14 reactant gases intake ductings, 15 reactant gases intake ductings, 16 reactant gases intake ductings, 17 sprays, 18 reactant gases intake ductings, 19 reactant gases intake ductings, 20 sprays, 21 reactant gases intake ductings, 22 reactant gases intake ductings, 23 reactant gases intake ductings, 24 reactant gases intake ductings, 25 air-flow ring flanges, 26 reactant gases intake ductings, 27 reactant gases intake ductings, 28 reactant gases intake ductings.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the present invention is described in further detail.
Embodiment one
As shown in Figure 1, be the design diagram of apparatus of the present invention.
Metal chloride supply 3 outsides, chamber are provided with heating unit 4 and pass into hcl reaction gas or hydrogen or nitrogen is the breather line of carrier gas, and the metal chloride reactant gases of generation carries by carrier gas and enters organometallics vapour phase epitaxy reaction chamber; Metal chloride supply 3 inside, chamber are provided with a quartz boat 6, (be called for short: the vapour phase epitaxy reaction chamber) top is provided with a reactant gases diffuser 9 to organometallics vapour phase epitaxy reaction chamber 8, can make organism reactant gases, group V source reactant gases such as the doped source gases such as ammonia and silane of gallium, indium, magnesium, aluminium enter reaction chamber; The slide glass dish 11 that vapour phase epitaxy reaction chamber 8 bottoms are provided with a bearing metal source to be placing substrate material, and slide glass dish 11 belows and top are provided with heating unit 10 and 12 and come conditioned reaction chamber internal temperature Gradient distribution.
take the epitaxial process of GaN as example, carrier gas enters metal chloride by intake ducting 1 and supplies in chamber 3, hydrogen chloride gas enters metal chloride by intake ducting 2 and supplies in chamber 3, heating unit 4 by the cavity outside is heated to 700 ℃-1000 ℃, the hydrogen chloride gas that passes into enters in the chamber under the carrying of carrier gas, react with the source metal 5 in quartz boat 6, during the growing GaN film, source metal is gallium, the mixed gass such as gallium chloride that reaction generates are entered in vapour phase epitaxy reaction chamber 8 by intake ducting 7 together with carrier gas, ammonia and carrier gas enter in reaction chamber 8 via reactant gases diffuser 9, the heating unit 12 of slide glass dish 11 belows is warming up to more than 1000 ℃, simultaneously with heating unit 10 heating of slide glass dish 11 tops, make its temperature higher than the temperature of slide glass panel surface, gallium chloride gas mixes with ammonia and reacts, the gan that generates is deposited on the substrate surface on slide glass dish 11, what carried out this moment is the growth of gallium nitride thick film, when gallium nitride film reaches certain thickness, close intake ducting 7, passed into gallium organic compound and the ammonia that is carried by carrier gas by diffuser 9, regulate simultaneously the heating unit 10 of slide glass dish 11 tops, make its temperature lower than the temperature of slide glass panel surface, carry out the film growth of gan.When needs carry out the growth of gallium nitrate based multi-element compounds film or adulterate, can pass into reaction source gas and doped source gas by diffuser 9.After reaction finished, tail gas was discharged by air outlet 13.
Embodiment two:
The present embodiment is identical with above-mentioned enforcement one, difference is that the reactant gases diffuser is central authorities' three laminar flow spout air intake structures as shown in Figure 2, when carrying out the growth of gallium nitride thick film, gallium chloride gas is entered in vapour phase epitaxy reaction chamber 8 by intake ducting 15 together with carrier gas, and ammonia and carrier gas mixed gas are entered in reaction chamber 8 by intake ducting 14 and intake ducting 16; When carrying out the growth of gallium nitride film, passed into the gallium organic compound that is carried by carrier gas by intake ducting 15.
Embodiment three:
The present embodiment is identical with embodiment one, difference is that the reactant gases diffuser is spray structure as shown in Figure 3, when carrying out the growth of gallium nitride thick film, gallium chloride gas is entered in spray 17 gas buffer chamber by intake ducting 7 together with carrier gas, ammonia and carrier gas mixed gas are entered in spray 17 gas buffer chamber by intake ducting 19, mix reacting after two kinds of reactant gasess are flowed out by spray apertures; When carrying out the growth of gallium nitride film, close intake ducting 7, passed into the gallium organic compound that is carried by carrier gas by intake ducting 18.
Embodiment four:
The present embodiment is identical with embodiment two, difference is that the reactant gases diffuser is central authorities' three laminar flow spouts and spray composite air intake structure as shown in Figure 4, when carrying out the growth of gallium nitride material, reactant gases can enter in reaction chamber 8 by intake ducting 21, intake ducting 22, intake ducting 23, or entered by intake ducting 24 in the cushion chamber of spray 20, then enter in reaction chamber 8 via spray apertures.
Embodiment five:
The present embodiment is identical with embodiment one, difference is that the reactant gases diffuser is air-flow flange plate structure as shown in Figure 5, air-flow ring flange 25 is provided with the tuyere through particular design, when carrying out the growth of gallium nitride material, main carrier gas is entered in reaction chamber 8 by intake ducting 28, when carrying out the growth of gallium nitride thick film, gallium chloride gas is entered in reaction chamber 8 by the tuyere on air-flow ring flange 25 by intake ducting 7 together with carrier gas; When carrying out the growth of gallium nitride film, the gallium organic compound that is carried by carrier gas is entered in reaction chamber 8 by the tuyere on air-flow ring flange 25 by intake ducting 26.
Claims (4)
1. the vapour phase epitaxy deposition apparatus that can realize element nitride crystal iso-epitaxy, comprise: a metal chloride supply chamber and an organometallics vapour phase epitaxy reaction chamber wherein: metal chloride supply outside, chamber is provided with heating unit and passes into hcl reaction gas or hydrogen or nitrogen is the breather line of carrier gas, inside is provided with the quartz boat in a bearing metal source, this metal chloride is supplied the chamber and also is provided with reactant gases and carrier gas passage, organometallics vapour phase epitaxy reaction chamber top is provided with a reactant gases diffuser, vapour phase epitaxy reaction chamber bottom is provided with the slide glass dish of a placement substrate material, slide glass dish below and top are provided with the heating unit of conditioned reaction chamber internal temperature Gradient distribution.
2. the vapour phase epitaxy deposition apparatus of element nitride crystal iso-epitaxy according to claim 1, wherein in organometallics vapour phase epitaxy reaction chamber the heating unit of slide glass dish top by the high temperature material manufacturing.
3. the vapour phase epitaxy deposition apparatus of element nitride crystal iso-epitaxy according to claim 1, wherein in organometallics vapour phase epitaxy reaction chamber, the heating unit of the heating unit of slide glass dish top is the netted layout of determinant.
4. the vapour phase epitaxy deposition apparatus of element nitride crystal iso-epitaxy according to claim 1, wherein in organometallics vapour phase epitaxy reaction chamber, the heating unit of slide glass dish top is placed between vapour phase epitaxy deposition reaction chamber reaction gases diffuser and slide glass dish.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107818926A (en) * | 2016-09-14 | 2018-03-20 | 株式会社斯库林集团 | Annealing device |
| CN108265279A (en) * | 2016-12-30 | 2018-07-10 | 苏州纳维科技有限公司 | Metal Ga efficient utilization devices and method |
| CN112921400A (en) * | 2021-01-06 | 2021-06-08 | 深圳宝铭微电子有限公司 | GaN single crystal growth method |
Citations (5)
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| US4533410A (en) * | 1982-10-19 | 1985-08-06 | Matsushita Electric Industrial Co., Ltd. | Process of vapor phase epitaxy of compound semiconductors |
| CN1350603A (en) * | 1999-05-07 | 2002-05-22 | Cbl技术公司 | Sequential hydride vapor-phase epitaxy |
| WO2002069376A1 (en) * | 2001-02-27 | 2002-09-06 | Cbl Technologies | Hybrid deposition system & methods |
| TW589394B (en) * | 1999-08-26 | 2004-06-01 | Cbl Technologies Inc | A MOCVD/HVPE hybrid deposition system and method |
| CN101631901A (en) * | 2007-02-24 | 2010-01-20 | 艾克斯特朗股份公司 | Device and method for selectively depositing crystalline layers using MOCVD or HVPE |
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2011
- 2011-11-02 CN CN201110341401XA patent/CN103088414A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4533410A (en) * | 1982-10-19 | 1985-08-06 | Matsushita Electric Industrial Co., Ltd. | Process of vapor phase epitaxy of compound semiconductors |
| CN1350603A (en) * | 1999-05-07 | 2002-05-22 | Cbl技术公司 | Sequential hydride vapor-phase epitaxy |
| TW589394B (en) * | 1999-08-26 | 2004-06-01 | Cbl Technologies Inc | A MOCVD/HVPE hybrid deposition system and method |
| WO2002069376A1 (en) * | 2001-02-27 | 2002-09-06 | Cbl Technologies | Hybrid deposition system & methods |
| CN101631901A (en) * | 2007-02-24 | 2010-01-20 | 艾克斯特朗股份公司 | Device and method for selectively depositing crystalline layers using MOCVD or HVPE |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107818926A (en) * | 2016-09-14 | 2018-03-20 | 株式会社斯库林集团 | Annealing device |
| US11881420B2 (en) | 2016-09-14 | 2024-01-23 | SCREEN Holdings Co., Ltd. | Light-irradiation thermal treatment apparatus |
| CN108265279A (en) * | 2016-12-30 | 2018-07-10 | 苏州纳维科技有限公司 | Metal Ga efficient utilization devices and method |
| CN112921400A (en) * | 2021-01-06 | 2021-06-08 | 深圳宝铭微电子有限公司 | GaN single crystal growth method |
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Application publication date: 20130508 |