CN2756644Y - Intercommunication type multiple reaction room high temperature organic metal chemical gas phase depositing device - Google Patents
Intercommunication type multiple reaction room high temperature organic metal chemical gas phase depositing device Download PDFInfo
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- CN2756644Y CN2756644Y CN 200420055041 CN200420055041U CN2756644Y CN 2756644 Y CN2756644 Y CN 2756644Y CN 200420055041 CN200420055041 CN 200420055041 CN 200420055041 U CN200420055041 U CN 200420055041U CN 2756644 Y CN2756644 Y CN 2756644Y
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Abstract
The utility model relates to the improvement of a chemical gas-phase chemical depositing or organic metal chemical gas-phase depositing device which comprises a gas path system, reaction chambers, a sample feeding mechanism, a transporting pipeline system, a vacuum machine set, a tail gas treating and an alarm systems and an operation control system in the prior art, wherein the utility model is provided with at least two reaction chambers, each reaction chamber is respectively provided with the sample feeding mechanism or shares the sample feeding mechanism, and each reaction chamber is respectively communicated with the gas path system and a vacuum system; the reaction chamber and the reaction chamber are communicated by a transporting pipeline on which a switch valve capable of controlling opening and closing is arranged. A sample heating device adopts the resistance heating mode of a graphite sheet, and heat shielding covers are also arranged around the heating device and a base sheet support so that the heating temperature is enhanced. The system designs in different reaction chambers of the utility model can be designed according to the different requirements of an independent MOCVD system for different materials so that the utility model overcomes the defect that one same MOCVD device can only be used for growing a same serial of thin film materials, and widens the operation function of the MOCVD device.
Description
Technical field
The utility model relates to the improvement of chemical gas phase chemical deposition (CVD) or MOCVD (MOCVD) device.
Technical background
MOCVD method (Metal Organic Chemical Vapor Deposition, be called for short MOCVD) is a kind of advanced person's of growing up in the later stage seventies in last century a vapor phase epitaxy technique, is widely used in the preparation of multiple thin-film material.Especially in field of semiconductor materials, it and molecular beam epitaxy (MBE) become the means that dominate side by side in the preparation of compound semiconductor film.
Existing organic metal chemical vapor deposition device (MOCVD) partly is made up of the air-channel system that reactant gases and organometallic sources are provided, reaction chamber, sample feeding mechanism, conveying pipe system, vacuum unit, vent gas treatment and warning and operation control system etc.MOCVD equipment can be used for large-area film growth, and the material ranges that is suitable for is wide, therefore, is widely used in scientific research and industrial production at present.
Usually, a MOCVD equipment only is equipped with a reaction chamber, that is to say MOCVD equipment thin-film material with a kind of series that can only be used for growing.Common has: the AlGaAs/GaAs of III-V family, GaAs base systems such as GaAsP/GaAs row, AlGaN/GaN, GaN base systems such as InGaN/GaN row, the Si/Ge series of IV family, the ZnS of II-VI family and ZnSe series etc.In recent years, the research of wide bandgap semiconductor thin-film material becomes very active problem, as GaN, zinc oxide and silicon carbide etc.Because the body monocrystalline of semiconductor material with wide forbidden band is difficult to preparation, price is very expensive, makes that the cost of iso-epitaxy is too high.From point of view of application, need to adopt the lower hetero epitaxy of price.Because the growth conditions difference of different series material is bigger, same reaction chamber is difficult to satisfy the requirement of differing materials growth; And growth different series material might cause crossed contamination in same reaction chamber.For example: the epitaxial growth temperature of zinc-oxide film is generally 600 ℃, the epitaxially grown temperature of carborundum films is up to 1400 ℃, difference of them is very big, the oxygen that exists in the growth of simultaneous oxidation zinc is the critical defect that influences growth of silicon carbide, and the hydrogen that epitaxial silicon carbide is used is the reductive agent of zinc oxide, thereby zinc oxide and silicon carbide can not be grown in same reaction chamber.Though also have some device to have a plurality of reaction chambers at present, generally all be isolated separately system, can not be communicated with the hybrid multilayer film of can not growing between the differential responses chamber.Material range of choice when above-mentioned situation has limited and carried out hetero epitaxy with common MOCVD equipment.In addition, the substrate heating temperature of existing MOCVD equipment is the highest can only to reach 1300 ℃, is lower than the material that some needs high growth temperature, and for example the needed temperature of epitaxial silicon carbide is 1400 ℃.
Summary of the invention
The purpose of this utility model is, at not enough in the prior art, expands the function of MOCVD equipment, makes its can be used for growing two kinds and two or more heterogeneous structure material.
The purpose of this utility model realizes in the following manner.
Communication type multi-reaction chamber high temperature organic metal chemical vapor deposition device of the present utility model, comprise air-channel system of the prior art, reaction chamber, sample feeding mechanism, transport piping system, vacuum unit, vent gas treatment and warning and operation control system, be provided with the sample heating arrangements in the described reaction chamber, it is characterized in that, described reaction chamber has two at least, each reaction chamber is respectively equipped with sample feeding mechanism or shared sample feeding mechanism, and each reaction chamber is communicated with air-channel system, vacuum system respectively; Be communicated with by conveying pipe between reaction chamber and the reaction chamber, on this conveying pipe, also be provided with the switch-valve that to control unlatching, to close, for example push-pull valve etc.The sample heating arrangements that is provided with in the described reaction chamber, by the resistance heater of the graphite flake that is arranged on substrate holder below and the thermoshield cover around being enclosed in constitute.
Communication type multi-reaction chamber high temperature organic metal chemical vapor deposition device of the present utility model is provided with a plurality of reaction chambers, and opens and closes by opening-closing valve control between the reaction chamber.When valve closes, each reaction chamber is all formed independently MOCVD system with corresponding pipeline and vacuum unit.Therefore, the indoor system design of differential responses can design the difference requirement of differing materials by MOCVD system independently, thereby can be used for the diverse thin-film material of growth properties respectively.Behind the valve open between the reaction chamber, be interconnected between the reaction chamber, realize the transmission of epitaxial wafer between different reaction chambers by shared sample feeding mechanism and mechanical manipulator, be used to grow different series, might cause the thin-film material of crossed contamination, reach the multilayer film heterojunction structure of forming by these materials, can only be used for growing with a kind of defective of thin-film material of series thereby overcome same MOCVD equipment, expand the functions of use of MOCVD equipment.
Communication type multi-reaction chamber high temperature organic metal chemical vapor deposition device of the present utility model, because its sample heating device adopts the resistive heating mode of graphite flake, and around well heater and substrate holder, be provided with the thermoshield cover, improved Heating temperature greatly, substrate temperature among the existing MOCVD is the highest can only to reach 1300 ℃, and use graphite flake resistive heating mode of the present utility model, its substrate temperature to can reach 1600 ℃.From this respect, also further expanded the functions of use of MOCVD equipment, for example the needed temperature of epitaxial silicon carbide is about 1400 ℃, just can reach easily.This has also just solved in same MOCVD device the difficult problem of not only developing zinc oxide but also growing silicon carbide and zinc oxide/silicon carbide structure material.
Utilize the communication type dual-reaction chamber high temperature MOCVD device described in the utility model that has built up, carry out the test of developing zinc oxide and silicon carbide on the Si substrate, the Heating temperature of its silicon carbide substrate reaches 1400 ℃.This equipment successfully grows area on the Si substrate be 1.5 inches, and thickness is 1 micron carborundum films, and silicon carbide (111) peak only appears in its X-ray diffraction, and the rocking curve half-breadth is 2.6 °; And on this carborundum films, grow area and be 1.5 inches, only zinc oxide (002) diffraction peak, its rocking curve half-breadth are arranged less than 2 ° zinc-oxide film (ZnO/SiC/Si).Can find out that thus this device reaches the service requirements of epitaxial silicon carbide fully.
Be further described below by embodiment and accompanying drawing thereof.
Description of drawings
Fig. 1 is the structural representation of a kind of embodiment with high temperature organic metal chemical vapor deposition device of two reaction chambers.
Fig. 2 is the embodiment synoptic diagram of the sample heating arrangements that is provided with in reaction chamber described in the utility model.
Fig. 3 is the example structure synoptic diagram of resistance heater that is arranged on the graphite flake of substrate holder below in the sample heating arrangements described in the utility model.
Embodiment
Among Fig. 1,1 is air-channel system, and 2 is first reaction chamber, and 4 for sample presets the chamber, and 6 is sample feeding mechanism, and 7 is vent gas treatment and warning, and 9 is the vacuum unit, and this six part is the permanent organization in the existing MOCVD device.They are in aggregates by transporting pipeline connection, respectively by valve 3,5,8,10 controls.13 second reaction chambers that increase for the utility model, this reaction chamber is communicated with by pipeline and first reaction chamber and air-channel system 1, vacuum unit 9, and by valve 14 control open and close, valve 12 is controlled being communicated with of second reaction chamber and vacuum unit between two reaction chambers.In first reaction chamber and second reaction chamber, be respectively equipped with sample heating arrangements 11.
In the present embodiment, two shared sample feeding mechanisms of reaction chamber.Therefore, what be communicated with the two transports pipeline and sample feeding mechanism coaxial line, so that sample is delivered in second reaction chamber.Also can set up sample again in the practical application and preset chamber and sample feeding mechanism in the side in addition of second reaction chamber.
Among Fig. 2, the 15th, the substrate holder of placing sample, its fixed form is same as the prior art.The 18th, the resistive heating sheet that graphite flake constitutes is fixed with two conductors and also draws respectively outside the reaction chamber on this heating piece, and its end is provided with the external tapping 17 with power connection.Because graphite flake can be high temperature resistant, so the temperature of substrate holder 15 nearby can reach 1600 ℃, to satisfy the needs of different service requirementss.The 16th, the annular thermoshield cover around being enclosed in, this thermoshield is covered with and is beneficial to the insulation that is placed on the sample in the substrate holder.
Referring to Fig. 3, the graphite resistance heating piece in the described resistance heater is designed to the multiple tracks circular concentric, and starting material are also saved in convenient processing.
Claims (3)
1. communication type multi-reaction chamber high temperature organic metal chemical vapor deposition device, comprise air-channel system of the prior art, reaction chamber, sample feeding mechanism, transport piping system, vacuum unit, vent gas treatment and warning and operation control system, be provided with the sample heating arrangements in the described reaction chamber, it is characterized in that, described reaction chamber has two at least, each reaction chamber is respectively equipped with sample feeding mechanism, and each reaction chamber is communicated with air-channel system, vacuum system respectively; Be communicated with by conveying pipe between reaction chamber and the reaction chamber, this conveying pipe is provided with the switch-valve that can control unlatching, close.
2. communication type multi-reaction chamber high temperature organic metal chemical vapor deposition device as claimed in claim 1 is characterized in that described reaction chamber has two at least, the shared sample feeding mechanism of each reaction chamber.
3. communication type multi-reaction chamber high temperature organic metal chemical vapor deposition device as claimed in claim 1, it is characterized in that, the sample heating arrangements that is provided with in the described reaction chamber, by the resistance heater of the graphite flake that is arranged on substrate holder below and the thermoshield cover around being enclosed in constitute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200420055041 CN2756644Y (en) | 2004-12-21 | 2004-12-21 | Intercommunication type multiple reaction room high temperature organic metal chemical gas phase depositing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200420055041 CN2756644Y (en) | 2004-12-21 | 2004-12-21 | Intercommunication type multiple reaction room high temperature organic metal chemical gas phase depositing device |
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| Publication Number | Publication Date |
|---|---|
| CN2756644Y true CN2756644Y (en) | 2006-02-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200420055041 Expired - Fee Related CN2756644Y (en) | 2004-12-21 | 2004-12-21 | Intercommunication type multiple reaction room high temperature organic metal chemical gas phase depositing device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101819925A (en) * | 2010-04-28 | 2010-09-01 | 中国科学院半导体研究所 | Chemical vapor deposition device |
| CN101899650A (en) * | 2010-04-30 | 2010-12-01 | 苏州索乐机电设备有限公司 | Substrate heating furnace of MOCVD |
| CN102212877A (en) * | 2010-07-09 | 2011-10-12 | 江苏中晟半导体设备有限公司 | MOCVD (Metal-organic Chemical Vapor Deposition) system with multiple extensional reaction cavities and operation method thereof |
| CN104152871A (en) * | 2014-08-11 | 2014-11-19 | 江南石墨烯研究院 | Selection of heating resistance material for high vacuum |
-
2004
- 2004-12-21 CN CN 200420055041 patent/CN2756644Y/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101819925A (en) * | 2010-04-28 | 2010-09-01 | 中国科学院半导体研究所 | Chemical vapor deposition device |
| CN101819925B (en) * | 2010-04-28 | 2013-01-23 | 中国科学院半导体研究所 | Chemical vapor deposition device |
| CN101899650A (en) * | 2010-04-30 | 2010-12-01 | 苏州索乐机电设备有限公司 | Substrate heating furnace of MOCVD |
| CN102212877A (en) * | 2010-07-09 | 2011-10-12 | 江苏中晟半导体设备有限公司 | MOCVD (Metal-organic Chemical Vapor Deposition) system with multiple extensional reaction cavities and operation method thereof |
| CN104152871A (en) * | 2014-08-11 | 2014-11-19 | 江南石墨烯研究院 | Selection of heating resistance material for high vacuum |
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| CF01 | Termination of patent right due to non-payment of annual fee |