CN113201725A

CN113201725A - Air inlet device and reaction chamber

Info

Publication number: CN113201725A
Application number: CN202110477358.3A
Authority: CN
Inventors: 秦海丰; 史小平; 兰云峰; 王勇飞; 张文强; 王昊; 任晓艳
Original assignee: Beijing Naura Microelectronics Equipment Co Ltd
Current assignee: Beijing Naura Microelectronics Equipment Co Ltd
Priority date: 2021-04-29
Filing date: 2021-04-29
Publication date: 2021-08-03

Abstract

The invention discloses an air inlet device and a reaction chamber, wherein the reaction chamber comprises a chamber body and a spray header, the spray header is arranged at the top of the chamber body, the air inlet device is used for being communicated with the spray header, and the air inlet device comprises a first pipeline and an air inlet assembly; the first pipeline is used for being communicated with the spray header, a first through hole is formed in the side wall of the first pipeline, and a first reaction gas or a cleaning gas is introduced into the gas inlet end of the first pipeline; the air inlet assembly comprises an assembly body, the assembly body is sleeved on the outer side of the first pipeline, at least two channels surrounding the first pipeline are arranged in the assembly body, a second through hole is formed in the outer side of the assembly body and is communicated with the adjacent channels, a third through hole is formed in the assembly body and is used for communicating the adjacent channels, a fourth through hole is formed in the inner side of the assembly body and is communicated with the first pipeline through the first through hole. The scheme can solve the problem of poor cleaning effect of the reaction chamber.

Description

Air inlet device and reaction chamber

Technical Field

The invention relates to the technical field of semiconductor chip manufacturing, in particular to an air inlet device and a reaction chamber.

Background

Atomic layer deposition can plate a substance as a monoatomic film layer on a wafer surface. In the coating process, two or more chemical vapor reaction gases sequentially generate chemical reactions on the surface of the wafer so as to generate a solid film.

In the related art, the reaction chamber includes a pipe and a chamber body, and the pipe is communicated with the chamber body. The reaction gas is carried by the carrier gas and can be introduced into the cavity body through the pipeline, so that the reaction gas reacts in the cavity body, and a film is generated on the surface of the wafer.

In order to improve the uniformity of the film on the surface of the wafer, the gas outlet end of the pipeline is provided with a straight-through gas inlet grid, and the reaction gas and the carrier gas can be mixed when passing through the straight-through gas inlet grid, so that the reaction gas and the carrier gas are mixed more uniformly, the pressure in the cavity body is maintained in a higher range, and the manufacturability of the reaction cavity is better.

However, although the straight-through gas inlet grid can mix the reaction gas and the carrier gas, the flow resistance of the straight-through gas inlet grid to the gas is large, so that when the reaction chamber needs to be cleaned, the introduced cleaning gas is blocked by the straight-through gas inlet grid, and the cleaning effect of the reaction chamber is poor.

Disclosure of Invention

The invention discloses an air inlet device and a reaction chamber, and aims to solve the problem that the cleaning effect of the reaction chamber is poor.

In order to solve the problems, the invention adopts the following technical scheme:

an air inlet device, the air inlet device is used for communicating with a reaction chamber, the reaction chamber comprises a chamber body and a spray header, the spray header is arranged on the top of the chamber body, the air inlet device is used for communicating with the spray header, and the air inlet device comprises:

the first pipeline is used for being communicated with the spray header, a first through hole is formed in the side wall of the first pipeline, and a first reaction gas or a first cleaning gas is introduced into the gas inlet end of the first pipeline;

the gas inlet assembly comprises an assembly body, the assembly body is sleeved on the outer side of the first pipeline, at least two channels surrounding the first pipeline are arranged in the assembly body and distributed at intervals along the radial direction of the assembly body, a second through hole is formed in the outer side of the assembly body and communicated with the adjacent channels, a third through hole is formed in the assembly body and used for communicating the adjacent channels, a fourth through hole is formed in the inner side of the assembly body and communicated with the adjacent channels, the fourth through hole is communicated with the first pipeline through the first through hole, and the gas inlet assembly is used for introducing first reaction gas into the first pipeline through the second through hole.

A reaction chamber, comprising: the reaction chamber comprises a reaction cavity body and a spray head, wherein the spray head is arranged on the chamber body, the reaction cavity body further comprises the air inlet device, and the air inlet device is communicated with the spray head.

The technical scheme adopted by the invention can achieve the following beneficial effects:

in the air inlet device disclosed by the invention, the air inlet assembly comprises an assembly body, the assembly body is sleeved outside the first pipeline, the assembly body is provided with at least two channels surrounding the first pipeline, and the at least two channels are distributed at intervals along the radial direction of the assembly body. The second reactant gas and the carrier gas can be mixed in the at least two channels, and the second reactant gas and the carrier gas are sufficiently mixed, so that the pressure in the chamber body is maintained in a high range. In this embodiment, the mixing of the second reactive gas and the carrier gas is performed outside the first conduit, so that no mixing member needs to be provided inside the first conduit. When reaction chamber need wash, because do not have mixing unit in the first pipeline, consequently the choked flow in the first pipeline is less, and then makes cleaning gas be difficult to hindered in the first pipeline, and then improves reaction chamber's cleaning performance.

Drawings

The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:

fig. 1 is a schematic structural view of a reaction chamber in the related art.

FIG. 2 is a cross-sectional view of a first reaction chamber disclosed in an embodiment of the present invention;

FIG. 3 is a cross-sectional view of an air inlet device of a first reaction chamber according to an embodiment of the present invention;

FIG. 4 is a cross-sectional view of a second reaction chamber disclosed in an embodiment of the present invention;

FIG. 5 is a sectional view of an air inlet device of a second reaction chamber according to an embodiment of the present invention;

fig. 6 to 8 are schematic structural views of a second through hole of an air intake device according to an embodiment of the present invention.

Description of reference numerals:

100-chamber body,

200-a first pipeline, 210-a first through hole, 220-a fifth through hole,

300-air inlet component, 301-channel, 310-component body, 311-cylinder jacket, 3111-second through hole, 3112-fourth through hole, 3113-sixth through hole, 3114-eighth through hole, 312-cylinder, 3121-third through hole, 3122-seventh through hole, 320-base, 321-mounting hole, 311-cylinder jacket,

400-plasma cleaning device, 410-second pipeline,

500-spray head,

600-base.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the specific embodiments of the present invention and the accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

The technical solutions disclosed in the embodiments of the present invention are described in detail below with reference to the accompanying drawings.

In the Plasma Enhanced Atomic Layer Deposition (PEALD) related technology, as shown in fig. 1, the reaction chamber includes a pipeline 1, a sealing block 2, a chamber body 3 and a spray header 4, the spray header 4 is disposed at the top of the chamber body 3, the sealing block 2 is disposed at the air outlet end of the pipeline 1, the sealing block 2 is provided with a through hole 21, the through hole 21 is used for communicating the spray header 4 with the pipeline, the air outlet end of the pipeline 1 is provided with a straight-through air inlet grid 5, and the straight-through air inlet grid is provided with a small hole for mixing the introduced reaction gas and the carrier gas. An air inlet 11 is formed in the side wall of the pipeline 1, and the air inlet 11 is used for introducing a first reaction gas, a second reaction gas and a carrier gas. The reaction chamber also comprises a radio frequency power supply 6, and the radio frequency power supply 6 is electrically connected with the spray header 4 so as to form an upper electrode. After the first reaction gas and the second reaction gas are introduced into the chamber body, the radio frequency power supply 6 applies radio frequency to the shower head 4 so that the first reaction gas generates plasma.

The inventor finds that the straight-through gas inlet grid 5 can mix the first reaction gas, the second reaction gas and the carrier gas to realize the pressurization effect in the process of realizing the creation of the invention. But the flow blocking of the gas is large, and the cleaning gas introduced into the reaction chamber is easily blocked by the straight-through air inlet grid 5, so that the cleaning effect of the reaction chamber is poor. In addition, the first reaction gas and the second reaction gas are introduced through the gas inlet holes 11, so that the first reaction gas and the second reaction gas are easy to generate gas phase reaction, and the safety of the reaction chamber is reduced. In addition, because the direct-connection air inlet grid has large flow resistance to the cleaning gas, the cleaning time and the using amount of the cleaning gas need to be prolonged, and the increase of the cleaning time and the using amount of the cleaning gas easily causes the damage to the parts in the chamber body, thereby shortening the service life of the chamber body.

The scheme disclosed by the application is as shown in fig. 2-8, the embodiment of the invention discloses an air inlet device, the disclosed air inlet device is used for being communicated with a reaction chamber, the reaction chamber comprises a chamber body 100 and a spray header 500, the spray header 500 is arranged at the top of the chamber body 100, and the air inlet device is used for being communicated with the spray header 500. The disclosed air intake apparatus includes a first duct 200 and an air intake assembly 300.

The first pipe 200 is used to communicate with the shower head 500, and at this time, the air outlet end of the first pipe 200 communicates with the shower head 500. The sidewall of the first pipe 200 is opened with a first through hole 210. The gas inlet end of the first pipe 200 is used for introducing a first reaction gas or a cleaning gas. The first reaction gas may be N₂、N₂/H₂NH3, etc. The first reactant gas is typically a reactant. The cleaning gas may be NF₃And the like.

The intake assembly 300 includes an assembly body 310, and the assembly body 310 is sleeved outside the first pipe 200. Within the assembly body 310 there are at least two channels 301 surrounding the first conduit 200. At least two channels 301 are spaced radially along the assembly body 310. The outer side of the assembly body 310 is provided with a second through hole 3111, and at this time, the second through hole 3111 is exposed out of the assembly body 310. The second through hole 3111 communicates with the adjacent passage 301. A third through hole 3121 is formed in the module body 310, and the third through hole 3121 is used for communicating two adjacent passages 301. The inner side of the assembly body 310 is provided with a fourth through hole 3112, and the fourth through hole 3112 is communicated with the adjacent channel 301. The fourth through hole 3112 is communicated with the first pipe 200 through the first through hole 210, and the gas inlet assembly 300 is configured to introduce the second reaction gas and the carrier gas into the first pipe 200 through the second through hole 3111. The carrier gas has good fluidity and can be used to carry the second reactive gas, thereby enhancing the fluidity of the second reactive gas. The second reactant gas can be a halogen-containing reactant, such as Si₂Cl₆(ii) a Or may be a C-containing organic gas such as 3 DMAS; or alternatively, a reactive gas that is free of both C and halogen, such as SiH₄. The second reaction gas is a reaction source. The carrier gas may be an inert gasSuch as argon. The first reactive gas and the second reactive gas mentioned above are reactants for coating the wafer.

When the gas inlet device is filled with the second reaction gas and the carrier gas, the second reaction gas and the carrier gas are firstly filled into the channel 301 through the second through hole 3111, then filled into the other channel 301 through the third through hole 3121, and finally filled into the first pipeline 200 through the fourth through hole 3112, and then transferred to the spray header 500 through the first pipeline 200, and are sprayed by the spray header 500 and then transferred into the chamber body 100.

In a specific operation process, after the second reaction gas is introduced into the chamber body 100, the second reaction gas is uniformly distributed on the surface of the wafer. And introducing the first reaction gas into the chamber body 100, ionizing the first reaction gas to form excited N atom active groups, and dissociating the silicon-containing groups in the second reaction gas by the high-energy ionized particles to form the silicon nitride film.

In the above embodiment, the reaction chamber may further include a radio frequency power source electrically connected to the showerhead 500, and the showerhead 500 and the radio frequency power source constitute an upper electrode. The upper electrode is capable of ionizing the first reactant gas or the purge gas when activated.

In the embodiments disclosed herein, the second reactive gas and the carrier gas can be sufficiently mixed in the at least two channels 301, and the second reactive gas and the carrier gas are sufficiently mixed, so that the pressure in the chamber body 100 is maintained in a high range. In contrast to the related art described above, the mixing of the second reactive gas and the carrier gas in the present application is performed outside the first conduit 200, so that no mixing part needs to be provided inside the first conduit 200. Because there is no mixing part in the first pipeline 200, the choked flow in the first pipeline 200 is small, so that the cleaning gas is not easily blocked in the first pipeline 200, and the cleaning effect of the reaction chamber is improved.

Compared with the related art, the choke flow in the first pipeline 200 is small, so that the cleaning gas can smoothly flow into the chamber body 100, the cleaning time and the amount of the cleaning gas are further shortened, parts of the chamber body 100 are not prone to damage, and the service life of the chamber body 100 is prolonged.

In addition, since there is no mixing part in the first pipe 200, the cleaning gas in the first pipe 200 can be uniformly diffused into the chamber body 100, and the process uniformity of the reaction chamber can be improved.

In the present application, the first reaction gas is introduced from the gas inlet end of the first pipe 200, and the second reaction gas is introduced from the gas inlet assembly 300. In the above related art, the first reactive gas and the second reactive gas are introduced through the gas inlet holes. Therefore, the ventilation mode can avoid the risk of gas phase reaction of the first reaction gas and the second reaction gas, and further improves the safety and the reliability of the gas inlet device.

In order to make the mixing of the second reactant gas and the carrier gas more uniform, in another alternative embodiment, the number of the third through holes 3121 may be plural, and the plural third through holes 3121 may be spaced in the axial direction of the first tube 200. In this scheme, the more number of third through holes 3121 has increased the flow property of second reactant gas and carrier gas to make the second gas that lets in and the more abundant of carrier gas mixture, improved the speed of deposit.

In the above embodiment, the vent holes may be arranged reasonably in order to maintain the vapor pressure of the second reactive gas and to make the mixing of the second reactive gas and the carrier gas more uniform. The diameter of the second through-hole 3111 may be between 5mm and 10mm, preferably between 6mm and 8 mm. The diameter of the third through hole 3121 may be between 2mm and 6mm, preferably between 3mm and 5 mm. The number of the third through holes 3121 may be 3 to 6. The diameter of the first through-hole 210 may be between 3mm and 8mm, preferably between 4mm and 6 mm. The fourth through-hole 3112 may have the same size as the first through-hole 210. Of course, the diameters of the first through hole 210, the second through hole 3111 and the third through hole 3121 may also be other values, and the present disclosure is not limited thereto.

In another alternative embodiment, the distance between the entrance side of the second through-hole 3111 and the bottom end of the pack body 310 is different from the distance between the exit side of the second through-hole 3111 and the bottom end of the pack body 310. At this time, the second through hole 3111 is obliquely arranged, and the oblique air intake mode of the second through hole 3111 may be divided into downward inclination and upward inclination. When the distance between the entrance side of the second through-hole 3111 and the bottom end of the module body 310 is greater than the distance between the exit side of the second through-hole 3111 and the bottom end of the module body 310, the exit end of the second through-hole is closer to the bottom end of the module body 310, and thus the second through-hole is disposed obliquely downward. When the distance between the inlet side of the second through-hole 3111 and the bottom end of the module body 310 is smaller than the distance between the outlet side of the second through-hole 3111 and the bottom end of the module body 310, the inlet side of the second through-hole is closer to the bottom end of the module body 310, and thus the second through-hole is disposed obliquely upward.

Further alternatively, the distance between the entrance side of the second through hole 3111 and the bottom end of the pack body 310 is the same as the distance between the exit side of the second through hole 3111 and the bottom end of the pack body 310. At this time, the axis of the second through hole 3111 is perpendicular to the axis of the first pipe 200, that is, the second through hole 3111 is horizontally supplied with air.

In the above scheme, the air intake assembly 300 can flexibly select three air intake modes according to the air intake requirement, so that different air intake requirements can be met, and the use performance of the air intake assembly 300 is improved.

Preferably, the second through hole 3111 adopts an air intake manner in an inclined downward direction. When the second through hole 3111 adopts the downward air inlet manner of slope, after the second reactant gas enters the channel 301, the particles carried by the second reactant gas will be deposited in the channel 301, so that the particles are not easy to enter the chamber body 100, and the cleanliness of the reaction chamber is further improved.

In the above embodiments, the assembly body 310 may be an integrated structure, and the pouring channel 301 may be adopted in the assembly body 310, but this way has a greater difficulty in demolding, and thus the assembly body 310 is more difficult to process.

In another alternative embodiment, as shown in fig. 3, the assembly body 310 may include a cylinder housing 311 and at least one cylinder 312, and a groove may be formed in a direction from a bottom end to a top end of the cylinder housing 311. At least one cylinder 312 may be located in the recess, the cylinder 312 enclosing the channel 301 with the side wall of the recess and between two adjacent cylinders 312. The third through hole 3121 may be opened in the cylinder 312, and the second through hole 3111 and the fourth through hole 3112 may be opened in the cylinder housing 311. At this time, a fourth through hole 3112 is formed on a side wall of the groove close to the first pipe 200, and a second through hole 3111 is formed on a side wall of the groove far from the first pipe 200. In this scheme, the channel 301 is formed by two adjacent cylinders 312 or the cylinder 312 and the side wall of the groove, so that the assembly body 310 has a simple structure and is convenient to manufacture.

The groove in the above embodiments may be manufactured by a machining method, for example, the groove may be formed by milling, planing, or the like, and of course, other methods may also be adopted, which is not limited herein.

In the above embodiment, the cylinder jacket 311 and the cylinder 312 may be connected by welding, clamping, bonding, screwing, riveting, or the like.

Further, the groove may be a wedge-shaped groove, the cylinder 312 may be located in the wedge-shaped groove, and one end of the cylinder 312 is connected to a groove bottom of the wedge-shaped groove. In this embodiment, one end of the cylinder 312 can be inserted into the sharp corner of the top surface of the wedge-shaped groove, so that the sealing performance between the cylinder 312 and the bottom surface of the groove can be improved, and the sealing performance between two adjacent channels 301 can be improved.

In another alternative embodiment, the inlet assembly 300 may further include a base 320, the base 320 may be provided with a mounting hole 321, and the base 320 may be disposed between the bottom end of the assembly body 310 and the top end of the chamber body 100. The first pipe 200 may penetrate the mounting hole 321 and communicate with the showerhead 500, and the base 320 may block a notch of the groove. In this embodiment, the base 320 may close the notch of the groove, so as to improve the sealing performance of the air inlet assembly 300. In addition, heat in the chamber body 100 is not easily transferred to the assembly body 310, so that the temperature of the gas inlet assembly 300 is low, and the first reaction gas and the second reaction gas are not easily subjected to a gas phase reaction.

The assembly body 310 may be connected to the base 320 by a screw thread, welding, riveting, etc., although other methods may be used without limitation. Specifically, the cylinder jacket 311 and the base 320 are connected by means of threads, welding, riveting, or the like.

In another alternative embodiment, the number of cylinders 312 may be one, with the cylinders 312 dividing the groove into two symmetrical channels 301. In this aspect, the number of the cylinder bodies 312 is small, so that the structure of the assembly body 310 is simpler.

In an alternative embodiment, as shown in fig. 4 and 5, the bottom and inner sides of the wedge-shaped groove are both open. The open structure may serve as the fourth through hole 3112, but the size of the open structure is larger, so that ventilation is smoother, and blocking of the first through hole 210 by the assembly body 310 is not easily caused.

In the above embodiment, when the assembly body 310 is sleeved on the first pipeline 200, the outer sidewall of the first pipeline 200 can block the open structure, the outer sidewall of the first pipeline 200 and the cylinder 312 near the first pipeline 200 form a channel 301, and the channel 301 is directly communicated with the first through hole 210.

In order to improve the air intake efficiency of the air intake assembly 300, in another alternative embodiment, the sidewall of the first conduit 200 may further be provided with a fifth through hole 220, and the fifth through hole 220 may be disposed opposite to the first through hole 210.

The assembly body 310 is further provided with a sixth through hole 3113 at an outer side thereof, the sixth through hole 3113 and the second through hole 3111 are communicated with the same channel 301, and the sixth through hole 3113 and the second through hole are located at two opposite sides of the assembly body 310.

The assembly body 310 is further provided with a seventh through hole 3122 therein, the seventh through hole 3122 is used for communicating two adjacent channels 301, the two adjacent channels 301 are communicated through the seventh through hole 3122 and the third through hole 3121, and the seventh through hole 3122 and the third through hole 3121 are located at two opposite sides of the assembly body 310.

The inside of subassembly body 310 has still seted up eighth through-hole 3114, and eighth through-hole 3114 and fourth through-hole 3112 are linked together with same passageway 301, and eighth through-hole 3114 and fourth through-hole 3112 are located the relative both sides of subassembly body 310. The sixth through hole 3113 may introduce the second reaction gas and the carrier gas into the first pipe 200.

In this scheme, the relative both sides of subassembly 300 that admits air are provided with the through-hole, consequently can realize both sides and admit air simultaneously, and then improved the efficiency of admitting air of subassembly 300 that admits air.

In addition, since the gas is introduced from both ends of the gas inlet assembly 300, the second reaction gas and the carrier gas at both opposite sides in the first pipe 200 are relatively uniform, and thus the process uniformity of the reaction chamber can be improved.

Alternatively, the size and number of the respective oppositely disposed through holes may be the same.

In another alternative embodiment, the gas inlet end of the first conduit 200 may be provided with a plasma cleaning device 400, and is in communication with the plasma cleaning device 400. At this time, the plasma cleaning device 400 may be located vertically above the first duct 200. The gas outlet end of the first pipe 200 may communicate with the shower head 500. The gas inlet apparatus disclosed in the present application may further include a second pipe 410, the second pipe 410 may be in communication with the Plasma cleaning apparatus 400 (RPS), and the second pipe 410 may be used to introduce a cleaning gas or a first reaction gas.

The plasma cleaning apparatus 400 is used to introduce a cleaning gas to clean the thin film deposited on the components of the chamber body 100.

In a specific cleaning process, the argon gas as the ignition gas is first introduced into the plasma cleaning apparatus 400 through the second pipe 410. At this time, the plasma cleaning apparatus 400 applies power so that the argon gas generates excited argon atoms with high energy, and the cleaning gas can generate high energy particles even at a certain power. For example, particles in the form of high energy F-, F, etc. The cleaning gas enters the first pipeline 200 under the carrying of argon atoms, and because no mixed part is used for blocking, the high-energy cleaning particles are less compounded in the transmission process, so that the parts around the chamber can be effectively cleaned, the cleaning efficiency is high, and the cleaning uniformity is good. And because the compounding is few, the heat that produces on main pipeline in the transmission course is few, can effectively avoid the high temperature to the damage of transmission pipeline and chamber part, reduces the formation of granule.

Alternatively, the distance between the plasma cleaning device 400 and the gas inlet assembly 300 may be between 5mm and 12mm, preferably, between 7mm and 10 mm. The distance between the plasma cleaning device 400 and the gas inlet assembly 300 refers to the distance between the bottom end of the plasma cleaning device 400 and the top end of the gas inlet assembly 300.

In addition, the first reaction gas can be ionized in the plasma cleaning device 400, so that the first reaction gas is less compounded in the first pipeline 200, the number of high-energy excited states N reaching the surface of the wafer is more, and the film deposition rate is further improved.

In the above embodiment, the rf power is applied to the showerhead 500, and the rf power and the showerhead 500 are used as the upper electrode of the reaction chamber. In the present application, since the first reactive gas can be ionized in the plasma cleaning apparatus 400, the reaction chamber does not need to be provided with a radio frequency electrode, and the reaction chamber does not need to be provided with an upper electrode, thereby simplifying the structure of the reaction chamber.

Alternatively, the intake assembly 300, the first duct 200, and the second duct 410 may be made of aluminum, aluminum alloy, aluminum-plated metal, chromium, iron, or other alloys.

The following aeration process may be employed in the above embodiment:

101. the second through hole 3111 is simultaneously supplied with the second reaction gas and the carrier gas.

At this time, the second reactive gas and the carrier gas are introduced into the first conduit 200 through the gas inlet assembly 300, and are transferred to the chamber body 100 through the first conduit 200.

102. When the second reactive gas and the carrier gas are introduced for a period of time, the introduction of the second reactive gas is stopped, and only the carrier gas is introduced into the second through-hole 3111.

At this time, the carrier gas purges the second reaction gas in the first pipeline 200, so that the second reaction gas and the first reaction gas can be prevented from generating a gas phase reaction.

103. After the carrier gas is introduced for a period of time, the second through hole 3111 stops introducing the carrier gas, and the first reaction gas is introduced into the second pipe 410.

The starting gas Ar forms high-energy excited state Ar atoms under a certain power, and then the first reaction gas is carried by Ar to be transmitted into the medium plasma cleaning apparatus 400 through the second pipe 410. The first reaction gas is ionized in the plasma cleaning apparatus 400, and then enters the chamber body 100 through the first pipe 200 under the carrying of Ar.

104. And (4) circulating the steps from 101 to 103 to obtain the film with the target thickness.

Based on the air inlet device of any one of the above embodiments of the invention, the embodiment of the invention also discloses a reaction chamber, and the disclosed reaction chamber is provided with the air inlet device of any one of the above embodiments. The reaction chamber further includes a chamber body 100 and a showerhead 500, the showerhead 500 being disposed on the chamber body 100. The air intake device communicates with the showerhead 500. At this time, other gas introduced from the gas inlet device may be injected into the chamber body 100 through the shower head 500, so that the diffusion range of the gas may be increased, and the process uniformity of the reaction chamber may be improved.

The reaction chamber may further include a susceptor 600, and the susceptor 600 may be disposed within the chamber body 100, and the susceptor 600 may be used to support a wafer while heating the wafer during processing. In addition, the base 600 is connected with a radio frequency power supply, and the base 600 and the radio frequency power supply form a lower electrode of the reaction chamber.

In the above embodiments of the present invention, the difference between the embodiments is mainly described, and different optimization features between the embodiments can be combined to form a better embodiment as long as they are not contradictory, and further description is omitted here in view of brevity of the text.

The above description is only an example of the present invention, and is not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.

Claims

1. An air inlet device for communicating with a reaction chamber, the reaction chamber comprising a chamber body (100) and a showerhead (500), the showerhead (500) being disposed at a top of the chamber body (100), the air inlet device for communicating with the showerhead (500), the air inlet device comprising:

the first pipeline (200), the first pipeline (200) is used for being communicated with the spray header (500), a first through hole (210) is formed in the side wall of the first pipeline (200), and the gas inlet end of the first pipeline (200) is used for introducing a first reaction gas or a cleaning gas;

the air inlet assembly (300) comprises an assembly body (310), the assembly body (310) is sleeved outside the first pipeline (200), at least two channels (301) surrounding the first pipeline (200) are arranged in the assembly body (310), the at least two channels (301) are distributed at intervals along the radial direction of the assembly body (310), a second through hole (3111) is formed in the outer side of the assembly body (310), the second through hole (3111) is communicated with the adjacent channel (301), a third through hole (3121) is formed in the assembly body (310), the third through hole (3121) is used for communicating the adjacent two channels (301), a fourth through hole (3112) is formed in the inner side of the assembly body (310), the fourth through hole (3112) is communicated with the adjacent channel (301), and the fourth through hole (3112) is communicated with the first pipeline (200) through the first through hole (210) The gas inlet assembly (300) is used for introducing a second reaction gas and a carrier gas into the first pipeline (200) through the second through hole (3111).

2. The air intake apparatus according to claim 1, wherein the number of the third through holes (3121) is plural, and the plural third through holes (3121) are provided at intervals in an axial direction of the first duct (200).

3. The intake apparatus according to claim 1, wherein a distance between an inlet side of the second through hole (3111) and a bottom end of the module body (310) is different from a distance between an outlet side of the second through hole (3111) and the bottom end of the module body (310); or the like, or, alternatively,

a distance between an entrance side of the second through hole (3111) and a bottom end of the pack body (310) is the same as a distance between an exit side of the second through hole (3111) and the bottom end of the pack body (310).

4. The air inlet device according to claim 1, wherein the assembly body (310) comprises a barrel casing (311) and at least one barrel (312), a groove is formed in a direction from a bottom end to a top end of the barrel casing (311), the at least one barrel (312) is located in the groove, the barrel (312), a side wall of the groove and two adjacent barrels (312) define the channel (301), the third through hole (3121) is formed in the barrel (312), and the second through hole (3111) and the fourth through hole (3112) are formed in the barrel casing (311).

5. The air intake device according to claim 4, wherein the groove is a wedge-shaped groove, the barrel (312) is located in the wedge-shaped groove, and one end of the barrel (312) is connected with the bottom of the wedge-shaped groove.

6. The air intake device according to claim 4, wherein the air intake assembly (300) further comprises a base (320), the base (320) defines a mounting hole (321), the base (320) is disposed between the bottom end of the assembly body (310) and the top end of the chamber body (100), the first pipe (200) penetrates through the mounting hole (321) and is communicated with the shower head (500), and the base (320) blocks the notch of the groove.

7. An air inlet arrangement according to claim 5, characterized in that the number of cylinders (312) is one, the cylinders (312) dividing the groove into two symmetrical channels (301).

8. The air inlet device according to claim 5, wherein the bottom surface and the inner side surface of the wedge-shaped groove are both in an open structure.

9. The air inlet device according to claim 1, characterized in that a plasma cleaning device (400) is arranged at the air inlet end of the first pipeline (200) and is communicated with the plasma cleaning device (400), and the air outlet end of the first pipeline (200) is communicated with the spray header (500); the gas inlet device further comprises a second pipeline (410), the second pipeline (410) is communicated with the plasma cleaning device 400), and the second pipeline (410) is used for introducing the cleaning gas or the first reaction gas.

10. A reaction chamber, comprising: a chamber body (100) and a showerhead (500), the showerhead (500) being disposed on the chamber body (100), characterized by further comprising an air inlet device according to any one of claims 1 to 9, the air inlet device being in communication with the showerhead (500).