CN114893477A - Semiconductor process equipment and gas homogenizing device thereof - Google Patents
Semiconductor process equipment and gas homogenizing device thereof Download PDFInfo
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- CN114893477A CN114893477A CN202210617730.0A CN202210617730A CN114893477A CN 114893477 A CN114893477 A CN 114893477A CN 202210617730 A CN202210617730 A CN 202210617730A CN 114893477 A CN114893477 A CN 114893477A
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F15—FLUID-PRESSURE ACTUATORS; HYDRAULICS OR PNEUMATICS IN GENERAL
- F15D—FLUID DYNAMICS, i.e. METHODS OR MEANS FOR INFLUENCING THE FLOW OF GASES OR LIQUIDS
- F15D1/00—Influencing flow of fluids
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- F15D1/025—Influencing flow of fluids in pipes or conduits by means of orifice or throttle elements
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67017—Apparatus for fluid treatment
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Abstract
The invention provides semiconductor process equipment and a gas homogenizing device thereof.A first gas homogenizing groove part of an upper gas homogenizing piece of the gas homogenizing device is opposite to a second gas homogenizing groove part of a middle gas homogenizing piece to form a first gas inlet channel communicated with the upper gas homogenizing piece and a first gas homogenizing channel part of a first gas exhaust through hole part of the middle gas homogenizing piece, the second gas inlet channel of the upper gas homogenizing piece is communicated with a third gas inlet channel of the middle gas homogenizing piece, the third gas homogenizing groove part of the middle gas homogenizing piece is opposite to a fourth gas homogenizing groove part of a lower gas homogenizing piece to form a second gas homogenizing channel part which is arranged in a staggered mode with the first gas exhaust through hole part and communicated with the third gas inlet channel and the third gas exhaust through hole part of the lower gas homogenizing piece, and the second gas exhaust through hole part of the lower gas homogenizing piece is communicated with the first gas exhaust through hole and arranged in a staggered mode with the third gas exhaust through hole part. The semiconductor process equipment and the gas homogenizing device thereof provided by the invention can reduce the processing difficulty of the gas homogenizing device, improve the processing precision and improve the cleanliness, thereby improving the quality and the service life of the gas homogenizing device and improving the semiconductor process result.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to semiconductor process equipment and a gas homogenizing device thereof.
Background
In semiconductor processing equipment, a gas homogenizing device is used for uniformly conveying process gas into a process chamber so as to improve the uniformity of the process gas in the process chamber and improve the uniformity of a semiconductor process result. In some semiconductor processes, different process gases need to be conveyed into a process chamber, so as to avoid the situation that the different process gases meet before entering the process chamber, particles are generated to block air outlet holes of an air homogenizing device and pollute the process chamber, different air homogenizing cavities which are mutually isolated can be arranged in the air homogenizing device, and the different process gases are respectively conveyed into the process chamber by virtue of the different air homogenizing cavities which are mutually isolated.
However, the existing gas uniformizing device provided with different gas uniformizing cavities which are isolated from each other is high in processing difficulty and low in processing precision, and particulate matters are easily generated in the processing process and left in the gas uniformizing device, so that the cleanliness of the gas uniformizing device is poor, the quality and the service life of the gas uniformizing device are affected, and the semiconductor process result is also affected.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a gas uniformizing device and semiconductor process equipment, which can reduce the processing difficulty of the gas uniformizing device, improve the processing precision and improve the cleanliness, thereby improving the quality and the service life of the gas uniformizing device and improving the semiconductor process result.
The gas homogenizing device of the semiconductor processing equipment is used for conveying different process gases into a process chamber of the semiconductor processing equipment and comprises an upper gas homogenizing piece, a middle gas homogenizing piece and a lower gas homogenizing piece which are sequentially stacked; wherein the content of the first and second substances,
the upper air homogenizing piece is provided with a first air inlet channel and a second air inlet channel, and the lower surface of the upper air homogenizing piece is provided with a first air homogenizing groove part;
a third air inlet channel is arranged on the middle air homogenizing piece and is communicated with the second air inlet channel; the upper surface of the middle air homogenizing piece is provided with a second air homogenizing groove part, the first air homogenizing groove part and the second air homogenizing groove part are oppositely arranged to form a first air homogenizing channel part, the first air inlet channel is communicated with the first air homogenizing channel part, the middle air homogenizing piece is further provided with a first air exhaust through hole part, and the first air exhaust through hole part is communicated with the first air homogenizing channel part; the lower surface of the middle air homogenizing piece is provided with a third air homogenizing groove part which is arranged in a staggered manner with the first exhaust through hole part;
the lower air homogenizing piece is provided with a second exhaust through hole part penetrating through the thickness of the lower air homogenizing piece, and the second exhaust through hole part is communicated with the first exhaust through hole part; the even trough of gas portion of fourth has been seted up to the upper surface of even gas piece down, the even trough of gas portion of third with the even trough of gas portion of fourth sets up relatively to form the even passageway portion that flows of second, third inlet channel with the even passageway portion intercommunication of second, still set up third exhaust through hole portion down on the even gas piece, third exhaust through hole portion with the even passageway portion intercommunication of second, the even trough of gas portion of fourth with third exhaust through hole portion all with second exhaust through hole portion dislocation set.
Optionally, the first gas distribution groove portion includes at least one first main gas distribution groove and a plurality of first branch gas distribution grooves arranged at intervals, the second gas distribution groove portion includes at least one second main gas distribution groove and a plurality of second branch gas distribution grooves arranged at intervals, the second main gas distribution groove is arranged corresponding to the first main gas distribution groove to form a first main flow distribution channel, the plurality of second branch gas distribution grooves are arranged opposite to the plurality of first branch gas distribution grooves one to form a plurality of first branch flow distribution channels at intervals, the first main flow distribution channel is used for communicating the first gas inlet channel and the plurality of first branch flow distribution channels, and the first main flow distribution channel and the first branch flow distribution channels form the first flow distribution channel portion;
the third gas homogenizing groove part comprises at least one third main gas homogenizing groove and a plurality of third gas homogenizing grooves arranged at intervals, the fourth gas homogenizing groove part comprises at least one fourth main gas homogenizing groove and a plurality of fourth gas homogenizing grooves arranged at intervals, the fourth main gas homogenizing groove and the third main gas homogenizing groove are arranged oppositely to form a second main gas homogenizing channel, the plurality of fourth gas homogenizing grooves and the plurality of third gas homogenizing grooves are arranged oppositely to form a plurality of second branch gas homogenizing channels at intervals, the second main gas homogenizing channel is used for communicating the second gas inlet channel and the plurality of second branch gas homogenizing channels, and the second main gas homogenizing channel and the second branch gas homogenizing channels form the second gas homogenizing channel part.
Optionally, the first exhaust through hole portion includes a plurality of first exhaust through holes, the first exhaust through holes are opened at the bottoms of the second gas homogenizing grooves, and the bottom of each second gas homogenizing groove is opened with a plurality of first exhaust through holes arranged at intervals; the second exhaust hole part comprises a plurality of second exhaust holes, and the second exhaust holes and the first exhaust holes are arranged in a one-to-one correspondence manner;
the third vent part comprises a plurality of third vent holes, the third vent holes are formed in the bottoms of the fourth gas homogenizing grooves, and a plurality of third vent through holes are formed at intervals in the bottoms of the fourth gas homogenizing grooves.
Optionally, the number of the first main gas-homogenizing grooves and the number of the second main gas-homogenizing grooves are multiple, the multiple first main gas-homogenizing grooves and the multiple second main gas-homogenizing grooves are arranged in a one-to-one opposite manner to form multiple first main flow-homogenizing channels, the multiple first main flow-homogenizing channels are arranged in a cross manner, and the cross positions of the multiple first main flow-homogenizing channels are communicated with the first gas inlet channel;
the plurality of first uniform flow channels extend in a direction parallel to the radial direction of the upper uniform gas piece, and each first uniform flow channel is communicated with one first main uniform flow channel.
Optionally, the number of the third main gas-homogenizing grooves and the number of the fourth main gas-homogenizing grooves are multiple, the multiple third main gas-homogenizing grooves and the multiple fourth main gas-homogenizing grooves are arranged in a one-to-one opposite manner to form multiple second main gas-homogenizing channels, the multiple second main gas-homogenizing channels are arranged in a crossed manner, and the crossed positions of the multiple second main gas-homogenizing channels are communicated with the second gas inlet channel;
the plurality of second branch uniform flow channels extend in a direction parallel to the radial direction of the middle uniform gas piece, and each second branch uniform flow channel is communicated with one second main uniform flow channel.
Optionally, the aperture of the air outlet of the second exhaust through hole is larger than the aperture of the air inlet of the second exhaust through hole; the caliber of the air outlet of the third exhaust through hole is larger than that of the air inlet of the third exhaust through hole.
Optionally, the surface roughness of the first uniform air slot portion, the second uniform air slot portion, the third uniform air slot portion and the fourth uniform air slot portion is less than ra0.4.
Optionally, the gas homogenizing device further comprises a plurality of positioning pieces, the upper gas homogenizing piece and the middle gas homogenizing piece are connected through two positioning pieces in a positioning mode, and the middle gas homogenizing piece and the lower gas homogenizing piece are connected through two positioning pieces in a positioning mode.
Optionally, the lower surface of the upper gas homogenizing piece and the upper surface of the middle gas homogenizing piece, and the lower surface of the middle gas homogenizing piece and the upper surface of the lower gas homogenizing piece are all welded by diffusion, so that the upper gas homogenizing piece, the middle gas homogenizing piece and the lower gas homogenizing piece are fixedly connected.
The invention also provides semiconductor processing equipment which comprises a process chamber and the gas homogenizing device provided by the invention, wherein the gas homogenizing device is arranged on the process chamber and is used for conveying different process gases into the process chamber.
The invention has the following beneficial effects:
the invention provides an air homogenizing device, which is characterized in that an upper air homogenizing piece, a middle air homogenizing piece and a lower air homogenizing piece which are separated are arranged, a first air homogenizing groove part is arranged on the lower surface of the upper air homogenizing piece, a second air homogenizing groove part is arranged on the upper surface of the middle air homogenizing piece, a third air homogenizing groove part is arranged on the lower surface of the middle air homogenizing piece, a fourth air homogenizing groove part is arranged on the upper surface of the lower air homogenizing piece, the first air homogenizing groove part and the second air homogenizing groove part are oppositely arranged, the third air homogenizing groove part and the fourth air homogenizing groove part are oppositely arranged, the upper air homogenizing piece, the middle air homogenizing piece and the lower air homogenizing piece can be sequentially arranged in a stacking mode, a first flow homogenizing channel part is formed by the first air homogenizing groove part and the second air homogenizing groove part, and a second flow homogenizing channel part is formed by the third air homogenizing groove part and the fourth air homogenizing groove part, and therefore, the upper air homogenizing piece, the middle air homogenizing piece and the lower air homogenizing piece are designed in a split mode, When the second, third and fourth gas uniformizing grooves are processed, the surfaces of the upper, middle and lower gas uniformizing pieces can be exposed to the outside, so that the processing of the first, second, third and fourth gas uniformizing grooves can be conveniently carried out, the process parameters such as the surface roughness of the first, second, third and fourth gas uniformizing grooves can be improved, the resistance of the process gas flowing through the first and second uniform flow channel parts can be reduced, and the particulate matters generated in the process of processing the first, second, third and fourth gas uniformizing grooves are not easy to leave in the gas uniformizing device, thereby reducing the processing difficulty of the gas uniformizing device, improving the processing precision, improving the cleanliness, and further improving the quality and service life of the gas uniformizing device, and improve semiconductor process results.
According to the semiconductor process equipment provided by the invention, the gas homogenizing device is arranged on the process chamber, and different process gases can be conveyed to the process chamber by virtue of the gas homogenizing device, so that the processing difficulty of the gas homogenizing device can be reduced, the processing precision is improved, the cleanliness is improved, the quality and the service life of the gas homogenizing device can be improved, and the semiconductor process result is improved.
Drawings
FIG. 1 is a schematic structural diagram of an air evening device provided by an embodiment of the invention;
FIG. 2 is a schematic top view of an air uniforming device according to an embodiment of the present invention;
fig. 3 is a schematic bottom view of an air evening device according to an embodiment of the invention;
FIG. 4 is a schematic sectional view taken along line A-A of FIG. 2;
FIG. 5 is an enlarged view of the structure at I in FIG. 4;
FIG. 6 is a schematic cross-sectional view taken along line B-B of FIG. 2;
FIG. 7 is an enlarged view of the structure at II in FIG. 6;
FIG. 8 is a schematic sectional view in the direction H-H of FIG. 2;
FIG. 9 is a schematic cross-sectional view taken along line C-C of FIG. 3;
FIG. 10 is an enlarged view of FIG. 9 at III;
FIG. 11 is a schematic cross-sectional view taken along line D-D of FIG. 6;
FIG. 12 is a schematic cross-sectional view taken along line E-E of FIG. 6;
FIG. 13 is a schematic cross-sectional view in the direction F-F of FIG. 6;
FIG. 14 is a schematic sectional view taken along line G-G of FIG. 6;
FIG. 15 is a schematic structural diagram of a semiconductor processing apparatus and a gas uniformizing device thereof according to an embodiment of the present invention;
description of reference numerals:
1-a gas homogenizing device; 111-upper air homogenizing piece; 112-middle air homogenizing piece; 113-lower air homogenizing piece; 121-a first uniform gas groove portion; 1211-a first main gas homogenizing groove; 1212-first gas homogenizing groove; 122-a second equalization channel section; 1221-a second main gas homogenizing groove; 1222-a second gas homogenizing groove; 123-a third equalization slot section; 1231-a third main gas homogenizing groove; 1232-third gas homogenizing groove; 124-a fourth uniform gas groove portion; 1241-a fourth main gas homogenizing groove; 1242-fourth gas homogenizing groove; 131-a first uniform flow channel part; 132-a second uniform flow channel section; 141-first connecting projection; 142-a second connecting boss; 143-a third connecting boss; 144-a fourth connecting boss; 151-first air intake channel; 152-a second intake passage; 153-third air intake passage; 161-first exhaust through hole portion; 162-a second exhaust through hole portion; 163-third exhaust through hole portion; 164-air outlet; 171-a first seal groove; 172-a second seal groove; 181-first positioning groove; 182-a second positioning groove; 183-third positioning groove; 184-a fourth positioning groove; 185-a positioning element; 191 — a first connection hole; 192-a second threaded hole; 2-a process chamber; 3-air inlet device.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, first, two gas uniforming devices under study by the inventor of the present invention will be described in detail, wherein one of the gas uniforming devices under study by the inventor of the present invention is to form different flow uniforming channel structures on an integrated gas uniforming body by drilling, each flow uniforming channel structure includes a plurality of channels, and the plurality of channels are dense, and the plurality of channels are spaced apart from each other by a small distance, so that each channel is slender, which makes the way of drilling to form the plurality of channels difficult to process, and is prone to processing errors and processing deviations, and the way of drilling to form the plurality of channels is difficult to process, which results in poor surface roughness of each channel, large resistance to process gas, and affects flow rate and flow rate of process gas, and because the way of drilling to form the plurality of channels needs to directly drill through the gas uniforming body, therefore, the sealing parts are required to be welded at the port of each channel to plug the port of each channel, and because the welding positions are many, the welding difficulty is high, the welding quality problem is easy to occur, particles generated in the welding process can be left in the channel, and the particles left in the channel are difficult to be cleaned in the modes of cleaning, purging and the like, so that the cleanliness of the interior of the gas uniformizing device is poor, the quality and the service life of the gas uniformizing device are influenced, and the semiconductor process result is influenced.
Another gas uniforming device under study by the inventor of the present invention is a gas uniforming device having a plurality of split gas uniforming bodies, wherein edges of two adjacent gas uniforming bodies are screwed by screws to connect the split gas uniforming bodies, and a sealing ring is disposed between the edges of the two adjacent gas uniforming bodies to seal the two adjacent gas uniforming bodies, but this may cause that two opposite surfaces of the middle portions of the two adjacent gas uniforming bodies may not be completely fitted at some positions, so that a gap may exist between the two opposite surfaces of the middle portions of the two adjacent gas uniforming bodies, so that different process gases may be mixed in the gas uniforming device, and the different process gases may meet before entering the process chamber, and generate particles to block the gas outlet holes of the gas uniforming device and contaminate the process chamber, and the sealing ring may generate particles due to aging or overheating factors, blocking the gas outlet of the gas uniformizing device and contaminating the process chamber, resulting in poor cleanliness inside the gas uniformizing device, affecting the quality and service life of the gas uniformizing device, and affecting the semiconductor process results.
In order to make those skilled in the art better understand the technical solution of the present invention, the semiconductor processing equipment and the gas uniformizing device thereof provided by the present invention are described in detail below with reference to the accompanying drawings.
As shown in fig. 1 to fig. 15, an embodiment of the present invention provides a gas uniformizing apparatus 1 for semiconductor processing equipment, configured to deliver different process gases into a process chamber 2 of the semiconductor processing equipment, wherein the gas uniformizing apparatus 1 includes an upper gas uniformizing part 111, a middle gas uniformizing part 112, and a lower gas uniformizing part 113, which are sequentially stacked; the upper air homogenizing piece 111 is provided with a first air inlet channel 151 and a second air inlet channel 152, and the lower surface of the upper air homogenizing piece 111 is provided with a first air homogenizing groove part 121; the middle air-homogenizing piece 112 is provided with a third air inlet channel 153, and the third air inlet channel 153 is communicated with the second air inlet channel 152; the upper surface of the middle air-uniforming piece 112 is provided with a second air-uniforming groove part 122, the first air-uniforming groove part 121 and the second air-uniforming groove part 122 are oppositely arranged to form a first air-uniforming channel part 131, the first air inlet channel 151 is communicated with the first air-uniforming channel part 131, the middle air-uniforming piece 112 is further provided with a first air outlet through hole part 161, and the first air outlet through hole part 161 is communicated with the first air-uniforming channel part 131; the lower surface of the middle air-homogenizing piece 112 is provided with a third air-homogenizing groove part 123, and the third air-homogenizing groove part 123 and the first exhaust through hole part 161 are arranged in a staggered manner; the lower air homogenizing piece 113 is provided with a second air exhaust through hole part 162 penetrating through the thickness of the lower air homogenizing piece, and the second air exhaust through hole part 162 is communicated with the first air exhaust through hole part 161; the upper surface of the lower air homogenizing piece 113 is provided with a fourth air homogenizing groove part 124, the third air homogenizing groove part 123 and the fourth air homogenizing groove part 124 are arranged oppositely to form a second air homogenizing channel part 132, the third air inlet channel 153 is communicated with the second air homogenizing channel part 132, the lower air homogenizing piece 113 is further provided with a third air exhaust through hole part 163, the third air exhaust through hole part 163 is communicated with the second air homogenizing channel part 132, and the fourth air homogenizing groove part 124 and the third air exhaust through hole part 163 are arranged in a staggered mode with the second air exhaust through hole part 162.
The gas uniformizing device 1 provided by the embodiment of the invention is provided with the upper gas uniformizing piece 111, the middle gas uniformizing piece 112 and the lower gas uniformizing piece 113 which are separated, the first gas uniformizing groove part 121 is arranged on the lower surface of the upper gas uniformizing piece 111, the second gas uniformizing groove part 122 is arranged on the upper surface of the middle gas uniformizing piece 112, the third gas uniformizing groove part 123 is arranged on the lower surface, the fourth gas uniformizing groove part 124 is arranged on the upper surface of the lower gas uniformizing piece 113, the first gas uniformizing groove part 121 and the second gas uniformizing groove part 122 are oppositely arranged, the third gas uniformizing groove part 123 and the fourth gas uniformizing groove part 124 are oppositely arranged, the upper gas uniformizing piece 111, the middle gas uniformizing piece 112 and the lower gas uniformizing piece 113 are sequentially arranged in a stacking way, the first gas uniformizing channel part 131 is formed by the first gas uniformizing groove part 121 and the second gas uniformizing groove part 122, the second gas uniformizing channel part 132 is formed by the third gas uniformizing groove part 123 and the fourth gas uniformizing groove part 124, thus, the upper gas uniformizing piece 111, the middle gas uniformizing piece 112 and the lower gas uniformizing piece 113 are designed in a separated type, so that when the first, second, third and fourth gas uniformizing grooves 121, 122, 123 and 124 on the surfaces of the upper, middle and lower gas uniformizing members 111, 112 and 113 are processed, the surfaces of the upper, middle and lower gas uniformizing members 111, 112 and 113 can be exposed to the outside, so as to facilitate the processing of the first, second, third and fourth gas uniformizing grooves 121, 122, 123 and 124, so that the process parameters such as the surface roughness of the first, second, third and fourth gas uniformizing grooves 121, 122, 123 and 124 can be improved, the resistance of the process gas flowing through the first and second gas uniformizing channels 131 and 132 is reduced, and the particles generated during the processing of the first, second, third and fourth gas uniformizing grooves 121, 122, 123 and 124 are not easily left in the gas uniformizing apparatus 1, therefore, the processing difficulty of the gas uniformizing device 1 can be reduced, the processing precision is improved, the cleanliness is improved, the quality and the service life of the gas uniformizing device 1 can be improved, and the semiconductor process result is improved.
Moreover, when the first, second, third and fourth gas uniformizing grooves 121, 122, 123 and 124 on the surfaces of the upper, middle and lower gas uniformizing members 111, 112 and 113 are processed, the surfaces of the upper, middle and lower gas uniformizing members 111, 112 and 113 can be exposed to the outside, so that the first, second, third and fourth gas uniformizing grooves 121, 122, 123 and 124 need not to be completely opened by the upper, middle and lower gas uniformizing members 111, 112 and 113, and therefore, it is not necessary to weld the sealing members to the first, second, third and fourth gas uniformizing grooves 121, 122, 123 and 124, and particles generated in the welding process of the sealing members in the first and second gas uniformizing channel portions 131 and 132 can be avoided, and thus the cleanliness of the gas uniformizing apparatus 1 can be improved, and the quality and service life of the gas uniformizing apparatus 1 can be improved, and improve semiconductor process results.
In practice, the first and second gas inlet channels 151 and 152 may be in one-to-one correspondence with two gas sources (not shown) providing two different process gases, and the second and third exhaust through hole portions 162 and 163 may be in communication with the process chamber 2 of the semiconductor processing apparatus. One process gas provided by one of the two gas sources is delivered to the first flow equalizing channel part 131 through the first gas inlet channel 151, the other process gas provided by the other gas source is delivered to the second flow equalizing channel part 132 through the second gas inlet channel 152 and the third gas inlet channel 153 in sequence, the process gas entering the first flow equalizing channel part 131 can be delivered to the process chamber 2 through the first gas outlet through hole part 161 and the second gas outlet through hole part 162 in sequence, and the process gas entering the second flow equalizing channel part 132 can be delivered to the process chamber 2 through the third gas outlet through hole part 163, so that the two different process gases do not meet in the gas equalizing device 1, and thus the two different process gases do not meet before entering the process chamber 2.
It can be understood that, since the gas uniformizing member is not disposed above the upper gas uniformizing member 111, there is no opposite surface on the upper surface of the upper gas uniformizing member 111, the gas uniformizing groove portion may not be disposed on the upper surface of the upper gas uniformizing member 111, and since the gas uniformizing member is not disposed below the lower gas uniformizing member 113, there is no opposite surface on the lower surface of the lower gas uniformizing member 113, and the gas uniformizing groove portion may not be disposed on the lower surface of the lower gas uniformizing member 113, and of course, a gas uniformizing groove portion may also be disposed.
However, the gas uniformizing apparatus 1 provided by the embodiment of the present invention is not limited to the three gas uniformizing members of the upper gas uniformizing member 111, the middle gas uniformizing member 112 and the lower gas uniformizing member 113, for example, the gas uniformizing member may be disposed above the upper gas uniformizing member 111, the gas uniformizing member may be disposed between the upper gas uniformizing member 111 and the middle gas uniformizing member 112, the gas uniformizing member may be disposed between the middle gas uniformizing member 112 and the lower gas uniformizing member 113, and the gas uniformizing member may be disposed below the lower gas uniformizing member, when the gas uniformizing apparatus 1 includes the three gas uniformizing members of the upper gas uniformizing member 111, the middle gas uniformizing member 112 and the lower gas uniformizing member 113, the gas uniformizing apparatus 1 may convey two different process gases into the process chamber 2, when the number of the gas uniformizing members included in the gas uniformizing apparatus 1 is four, the gas uniformizing apparatus 1 may convey different process gases into the four process chambers 2, when the gas evening-out apparatus 1 comprises a larger number of evening-out pieces, the gas evening-out apparatus 1 may deliver a larger number of different process gases into the process chamber 2.
In a preferred embodiment of the present invention, the surface roughness of the first uniform air groove portion 121, the second uniform air groove portion 122, the third uniform air groove portion 123 and the fourth uniform air groove portion 124 may be all less than ra0.4.
As shown in fig. 1, 11-14, in a preferred embodiment of the present invention, the first air distributing groove part 121 may include at least one first main air distributing groove 1211 and a plurality of first branch air distributing grooves 1212 arranged at intervals, the second air distributing groove part 122 may include at least one second main air distributing groove 1221 and a plurality of second branch air distributing grooves 1222 arranged at intervals, the second main air distributing groove 1221 is arranged corresponding to the first main air distributing groove 1211 to form a first main air distributing channel, the plurality of second branch air distributing grooves 1222 are arranged one-to-one opposite to the plurality of first branch air distributing grooves 1212 to form a plurality of first branch air distributing channels arranged at intervals, the first main air distributing channel is used for communicating the first air inlet channel 151 and the plurality of first branch air distributing channels, and the first main air distributing channel and the first branch air distributing channels form a first air distributing channel part 131; the third air distributing groove part 123 may include at least one third main air distributing groove 1231 and a plurality of third branch air distributing grooves 1232 arranged at intervals, the fourth air distributing groove part may include at least one fourth main air distributing groove 1241 and a plurality of fourth branch air distributing grooves 1242 arranged at intervals, the fourth main air distributing groove 1241 is arranged opposite to the third main air distributing groove 1231 to form a second main flow distributing channel, the plurality of fourth branch air distributing grooves 1242 is arranged opposite to the plurality of third branch air distributing grooves 1232 one to form a plurality of second branch flow distributing channels arranged at intervals, the second main flow distributing channel is used for communicating the second air inlet channel 152 and the plurality of second branch flow distributing channels, and the second main flow distributing channel and the second branch flow distributing channels form the second flow distributing channel part 132.
In practical applications, the first gas inlet channel 151 delivers the process gas to a first main uniform flow channel, the first main uniform flow channel distributes the process gas to a plurality of first sub uniform flow channels, respectively, and the process gas in the plurality of first sub uniform flow channels is delivered to the process chamber 2 through the first exhaust through hole portion 161 and the second exhaust through hole portion 162. The second and third gas inlet passages 152 and 153 deliver the process gas to the second main uniform flow passage, which uniformly flows the process gas to the plurality of second branch uniform flow passages, respectively, and the process gas in the plurality of second branch uniform flow passages is delivered into the process chamber 2 through the third exhaust through hole part 163.
In a preferred embodiment of the present invention, the surface roughness of the first main uniform flow channel, the first subsidiary uniform flow channel, the second main uniform flow channel and the second subsidiary uniform flow channel may each be less than ra0.4.
As shown in fig. 1 to 14, in a preferred embodiment of the present invention, the first exhaust through hole 161 may include a plurality of first exhaust through holes, the first exhaust through holes are opened at the bottom of the second gas uniformization groove 1222, and the bottom of each of the second gas uniformization grooves 1222 is opened with a plurality of first exhaust through holes arranged at intervals; the second exhaust hole part may include a plurality of second exhaust holes, the plurality of second exhaust holes being arranged in one-to-one correspondence with the plurality of first exhaust holes; the third exhaust hole portion may include a plurality of third exhaust holes, the third exhaust holes are opened at the bottom of the fourth air uniformizing grooves 1242, and a plurality of third exhaust through holes are opened at intervals at the bottom of each fourth air uniformizing groove 1242.
In practical applications, the process gas in the first uniform flow channel part 131 may be sequentially delivered into the process chamber 2 through the plurality of first exhaust through holes and the plurality of second exhaust through holes, and the process gas in the second uniform flow channel part 132 may be delivered into the process chamber 2 through the plurality of third exhaust through holes.
Alternatively, the plurality of first exhaust through holes of the groove bottom of each second branch gas uniformizing groove 1222 may be uniformly spaced along the extending direction of each second branch gas uniformizing groove 1222, so that the process gas in the first flow uniforming channel portion 131 can be uniformly delivered into the process chamber 2 by the plurality of first exhaust through holes and the plurality of second exhaust through holes.
Alternatively, a plurality of third exhaust through holes at the bottom of each fourth gas distributing groove 1242 may be uniformly spaced along the extending direction of each fourth gas distributing groove 1242, so that the process gas in the second gas distributing channel part 132 can be uniformly delivered into the process chamber 2 by the plurality of third exhaust through holes.
As shown in fig. 1, 11-14, in a preferred embodiment of the present invention, the number of the first main gas-uniforming grooves 1211 and the second main gas-uniforming grooves 1221 may be plural, the plural first main gas-uniforming grooves 1211 and the plural second main gas-uniforming grooves 1221 are arranged in one-to-one correspondence to form plural first main flow-uniforming channels, the plural first main flow-uniforming channels are arranged in a cross manner, and the cross portion of the plural first main flow-uniforming channels is communicated with the first gas inlet channel 151; the plurality of first uniform flow channels extend along the direction parallel to the radial direction of the upper uniform air piece, and each first uniform flow channel is communicated with one first main uniform flow channel.
Such a design can enable the process gas entering the first uniform flow channel part 131 to be delivered to the plurality of first uniform flow channels through the plurality of first main uniform flow channels, so as to improve the efficiency of delivering the process gas to the plurality of first uniform flow channels, and enable the process gas to enter the plurality of first main uniform flow channels at the central position of the first uniform flow channel part 131, so as to improve the uniformity of delivering the process gas to the plurality of first uniform flow channels.
As shown in fig. 1, 11-14, in a preferred embodiment of the present invention, the third main air uniforming groove 1231 and the fourth main air uniforming groove 1241 may be plural, a plurality of the third main air uniforming grooves 1231 and a plurality of the fourth main air uniforming grooves 1241 are arranged in one-to-one correspondence to form a plurality of second main uniform flow passages, the plurality of second main uniform flow passages are arranged in a crossing manner, and the crossing portions of the plurality of second main uniform flow passages communicate with the second air inlet passage 152; the plurality of second branch uniform flow channels extend along the direction parallel to the radial direction of the middle uniform gas piece, and each second branch uniform flow channel is communicated with one second main uniform flow channel.
Such a design can enable the process gas entering the second uniform flow channel part 132 to be delivered to the plurality of second branch uniform flow channels through the plurality of second main uniform flow channels, so as to improve the efficiency of delivering the process gas to the plurality of second branch uniform flow channels, and enable the process gas to enter the plurality of second main uniform flow channels at the central position of the second uniform flow channel part 132, so as to improve the uniformity of delivering the process gas to the plurality of second branch uniform flow channels.
As shown in fig. 1, 11-14, alternatively, a plurality of first main uniform flow channels may intersect to form a plurality of first spaced areas, and a plurality of first branch uniform flow channels are arranged in each first spaced area at intervals; the plurality of second main uniform flow channels are intersected to form a plurality of second interval areas, and a plurality of second branch uniform flow channels are arranged in each second interval area at intervals.
Taking the number of the first main uniform flow channels as two as an example, the two first main uniform flow channels are crossed to form four first spaced areas, and a plurality of first uniform flow channels are arranged in each first spaced area at intervals, so that the uniformity of the plurality of first uniform flow channels can be improved, and the uniformity of the process gas delivered to the process chamber 2 by the gas uniformizing device 1 can be improved. Taking the number of the second main uniform flow channels as two as an example, the two second main uniform flow channels are crossed to form four second spaced areas, and a plurality of second branch uniform flow channels are arranged in each second spaced area at intervals, so that the uniformity of the plurality of second branch uniform flow channels can be improved, and the uniformity of the process gas delivered to the process chamber 2 by the gas uniformizing device 1 can be improved.
As shown in fig. 1, 11-14, alternatively, all of the first uniform flow channels in the two first spaced-apart regions that are opposed may be parallel to each other; all of the second branch uniform flow channels in the two opposite second spaced regions may be parallel to each other.
Taking the example that the two first main uniform flow channels intersect to form four first separation areas, two first separation areas in the four first separation areas are opposite, and the other two first separation areas are opposite, all the first uniform flow channels in the two opposite first separation areas can be parallel to each other, and all the first uniform flow channels in the other two opposite first separation areas can be parallel to each other, so that the uniformity of the plurality of first uniform flow channels can be further improved, and the uniformity of the process gas delivered by the gas uniformizing device 1 to the process chamber 2 can be further improved.
Taking the example that the two second main uniform flow channels intersect to form four second separation regions, two of the four second separation regions are opposite, and the other two second separation regions are opposite, so that all the second uniform flow channels in the two opposite second separation regions can be parallel to each other, and all the second uniform flow channels in the other two opposite second separation regions can be parallel to each other, which can further improve the uniformity of the plurality of second uniform flow channels, thereby further improving the uniformity of the process gas delivered from the gas uniformizing device 1 to the process chamber 2.
As shown in fig. 7 and 10, in a preferred embodiment of the present invention, the caliber of the air outlet 164 of the second exhaust through hole may be larger than the caliber of the air inlet of the second exhaust through hole; the caliber of the air outlet 164 of the third exhaust through hole may be greater than the caliber of the air inlet of the third exhaust through hole.
Such a design can reduce the resistance of the process gas entering the process chamber 2, so that the process gas can enter the process chamber 2 more smoothly.
As shown in fig. 7 and 10, alternatively, the air outlet 164 of the second exhaust through hole may have a first tapered shape; the air outlet 164 of the third exhaust through hole may have a second taper shape.
Alternatively, the first taper angle may be 60 ° (as shown by angle a in fig. 10); the angle of the second taper may be 60 °.
As shown in fig. 1-14, in a preferred embodiment of the present invention, the gas uniforming device 1 may further comprise a plurality of positioning members 185, the upper gas uniforming member 111 and the middle gas uniforming member 112 are positioned and connected by two positioning members 185, and the middle gas uniforming member 112 and the lower gas uniforming member 113 are positioned and connected by two positioning members 185.
As shown in fig. 1-14, in a preferred embodiment of the present invention, the gas uniforming device 1 may further comprise a plurality of positioning members 185, the upper gas uniforming member 111 and the middle gas uniforming member 112 are positioned and connected by two positioning members 185, and the middle gas uniforming member 112 and the lower gas uniforming member 113 are positioned and connected by two positioning members 185.
As shown in fig. 1 to 14, optionally, the lower surface of the upper gas uniformizing element 111 may be provided with two first positioning grooves 181, the upper surface of the middle gas uniformizing element 112 may be provided with two second positioning grooves 182, the two first positioning grooves 181 and the two second positioning grooves 182 are in one-to-one correspondence for inserting the two positioning elements 185, the lower surface of the middle gas uniformizing element 112 may be provided with two third positioning grooves 183, the upper surface of the lower gas uniformizing element 113 may be provided with two fourth positioning grooves 184, and the two third positioning grooves 183 and the two fourth positioning grooves 184 are in one-to-one correspondence for inserting the two positioning elements 185.
When the upper air uniforming member 111, the middle air uniforming member 112 and the lower air uniforming member 113 are stacked, two positioning members 185 may be respectively inserted into the two first positioning grooves 181 and the two second positioning grooves 182, and the other two positioning members 185 may be respectively inserted into the two third positioning grooves 183 and the two fourth positioning grooves 184, so as to position the relative positions of the upper air uniforming member 111, the middle air uniforming member 112 and the lower air uniforming member 113 by means of the plurality of positioning members 185, thereby improving the accuracy of installation of the upper air uniforming member 111, the middle air uniforming member 112 and the lower air uniforming member 113.
In a preferred embodiment of the present invention, the lower surface of the upper gas uniforming member 111 and the upper surface of the middle gas uniforming member 112, and the lower surface of the middle gas uniforming member 112 and the upper surface of the lower gas uniforming member 113 may be all welded by diffusion (contact surface welding in which surfaces in contact with each other are welded by the principle of molecular diffusion) to fixedly connect the upper gas uniforming member 111, the middle gas uniforming member 112 and the lower gas uniforming member 113.
In practical application, the upper gas uniformizing piece 111, the middle gas uniformizing piece 112 and the lower gas uniformizing piece 113 can be made of the same material, and the same material is subjected to diffusion welding, so that welding slag is not generated after welding, the welding performance is reliable and pollution-free, the cleanliness of the gas uniformizing device 1 can be improved, the quality and the service life of the gas uniformizing device 1 can be further improved, and the semiconductor process result can be improved.
As shown in fig. 1, 11 to 14, a first connecting protrusion 141 may be formed between two adjacent first branch gas uniform grooves 1212, a second connecting protrusion 142 may be formed between two adjacent second branch gas uniform grooves 1222, a lower surface of the first connecting protrusion 141 may be a lower surface of the upper gas uniform member 111, an upper surface of the second connecting protrusion 142 may be an upper surface of the middle gas uniform member 112, and a lower surface of the first connecting protrusion 141 may be diffusion-welded to an upper surface of the second connecting protrusion 142; a third connecting protrusion 143 may be formed between two adjacent third gas distributing grooves 1232, a fourth connecting protrusion 144 may be formed between two adjacent fourth gas distributing grooves 1242, a lower surface of the third connecting protrusion 143 may be a lower surface of the middle gas distributing member 112, an upper surface of the fourth connecting protrusion 144 may be an upper surface of the lower gas distributing member 113, and a lower surface of the third connecting protrusion 143 may be diffusion-welded to an upper surface of the fourth connecting protrusion 144.
Thus, the diffusion welding between the lower surface of the upper gas uniformizing piece 111 and the upper surface of the middle gas uniformizing piece 112, and between the lower surface of the middle gas uniformizing piece 112 and the upper surface of the lower gas uniformizing piece 113 can be realized, the upper gas uniformizing piece 111, the middle gas uniformizing piece 112 and the lower gas uniformizing piece 113 are fixedly connected, gaps are prevented from being formed between the lower surface of the upper gas uniformizing piece 111 and the upper surface of the middle gas uniformizing piece 112, and between the lower surface of the middle gas uniformizing piece 112 and the upper surface of the lower gas uniformizing piece 113, different process gases are prevented from being mixed in the gas uniformizing device 1, particles are prevented from blocking the first exhaust through hole part 161, the second exhaust through hole part 162, the third exhaust through hole part 163 and the contaminated process chamber 2, and therefore, the cleanliness of the gas uniformizing device 1 can be improved, the quality and the service life of the gas uniformizing device 1 can be improved, and the semiconductor process result can be improved.
In addition, since the number of the first branch gas uniforming groove 1212, the second branch gas uniforming groove 1222, the third branch gas uniforming groove 1232, and the fourth branch gas uniforming groove 1242 is plural, and the number of the first connecting protrusion 141, the second connecting protrusion 142, the third connecting protrusion 143, and the fourth connecting protrusion 144 is also plural, the welding area between the upper gas uniforming member 111 and the middle gas uniforming member 112, and the welding stability between the middle gas uniforming member 112 and the lower gas uniforming member 113 can be improved by diffusion-welding the plurality of first connecting protrusions 141 and the plurality of second connecting protrusions 142, and the plurality of third connecting protrusions 143 and the plurality of fourth connecting protrusions 144, and by diffusion-welding the plurality of first connecting protrusions 141 and the plurality of second connecting protrusions 142, and the plurality of third connecting protrusions 143 and the plurality of fourth connecting protrusions 144. In addition, no sealing ring is required to be arranged between the lower surface of the upper gas uniformizing piece 111 and the upper surface of the middle gas uniformizing piece 112, and between the lower surface of the middle gas uniformizing piece 112 and the upper surface of the lower gas uniformizing piece 113, so that particles generated by the sealing ring can be prevented from blocking the first exhaust through hole part 161, the second exhaust through hole part 162, the third exhaust through hole part 163 and the contaminated process chamber 2 of the gas uniformizing device 1, the cleanliness of the gas uniformizing device 1 can be improved, the quality and the service life of the gas uniformizing device 1 can be improved, and the semiconductor process result can be improved.
Optionally, the second branch air-equalizing groove 1222 is disposed corresponding to the third connecting protrusion 143, the second exhaust through hole 162 is disposed on the fourth connecting protrusion 144, the third branch air-equalizing groove 1232 is disposed corresponding to the second connecting protrusion 142, and the third air intake channel 153 penetrates through the second connecting protrusion 142 and communicates with the third branch air-equalizing groove 1232.
As shown in fig. 1 and 2, optionally, the upper surface of the upper gas uniforming member 111 may be provided with a first sealing groove 171 and a second sealing groove 172, the first sealing groove 171 is disposed around the first gas inlet passage 151, a first sealing ring is disposed in the first sealing groove 171 and is used for sealing the first gas inlet passage 151, the second sealing groove 172 is disposed around the first gas inlet passage 151 and the second gas inlet passage 152, and a second sealing ring is disposed in the second sealing groove 172 and is used for sealing the second gas inlet passage 152.
As shown in fig. 1-3 and 15, optionally, the upper air homogenizing member 111 may be communicated with the air source through the air inlet device 3, and the upper air homogenizing member 111 may be provided with a plurality of second threaded holes 192, and the air inlet device 3 may be provided with a plurality of second connecting holes, so that the upper air homogenizing member 111 may be connected to the bottom of the air inlet device 3 by passing a plurality of second screws through the plurality of second connecting holes in a one-to-one correspondence and threadedly connecting the plurality of second threaded holes 192 in a one-to-one correspondence, thereby connecting the air homogenizing device 1 to the air inlet device 3.
As shown in fig. 15, the embodiment of the present invention further provides a semiconductor processing apparatus, which includes a process chamber 2, a gas distribution device 1 according to the embodiment of the present invention, wherein the gas distribution device 1 is disposed on the process chamber 2 and is used for respectively delivering different process gases to the process chamber 2.
According to the semiconductor process equipment provided by the embodiment of the invention, the gas uniformizing device 1 provided by the embodiment of the invention is arranged on the process chamber 2, and different process gases can be conveyed to the process chamber 2 by means of the gas uniformizing device 1 provided by the embodiment of the invention, so that the processing difficulty of the gas uniformizing device 1 can be reduced, the processing precision can be improved, the cleanliness can be improved, the quality and the service life of the gas uniformizing device 1 can be improved, and the semiconductor process result can be improved.
As shown in fig. 1-3 and 15, optionally, the upper gas uniformizing element 111 may overlap the top of the process chamber 2, and a plurality of first connection holes 191 may be disposed in the circumferential direction of the edge of the upper gas uniformizing element 111, and a plurality of first threaded holes may be disposed in the circumferential direction of the top of the process chamber 2, so that the upper gas uniformizing element 111 may be connected to the top of the process chamber 2 by passing a plurality of first screws through the plurality of first connection holes 191 in a one-to-one correspondence manner and being in threaded connection with the plurality of first threaded holes in a one-to-one correspondence manner, thereby realizing the connection between the gas uniformizing apparatus 1 and the process chamber 2.
In summary, the gas uniformizing apparatus 1 and the semiconductor processing equipment provided by the embodiment of the invention can reduce the processing difficulty of the gas uniformizing apparatus 1, improve the processing precision, and improve the cleanliness, thereby improving the quality and the service life of the gas uniformizing apparatus 1, and improving the semiconductor processing result.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention, and these changes and modifications are to be considered as within the scope of the invention.
Claims (10)
1. A gas homogenizing device of semiconductor processing equipment is used for conveying different process gases into a process chamber of the semiconductor processing equipment, and is characterized in that the gas homogenizing device comprises an upper gas homogenizing piece, a middle gas homogenizing piece and a lower gas homogenizing piece which are sequentially stacked; wherein the content of the first and second substances,
the upper air homogenizing piece is provided with a first air inlet channel and a second air inlet channel, and the lower surface of the upper air homogenizing piece is provided with a first air homogenizing groove part;
a third air inlet channel is arranged on the middle air homogenizing piece and is communicated with the second air inlet channel; the upper surface of the middle air homogenizing piece is provided with a second air homogenizing groove part, the first air homogenizing groove part and the second air homogenizing groove part are oppositely arranged to form a first air homogenizing channel part, the first air inlet channel is communicated with the first air homogenizing channel part, the middle air homogenizing piece is further provided with a first air exhaust through hole part, and the first air exhaust through hole part is communicated with the first air homogenizing channel part; the lower surface of the middle air homogenizing piece is provided with a third air homogenizing groove part which is arranged in a staggered manner with the first exhaust through hole part;
the lower air homogenizing piece is provided with a second exhaust through hole part penetrating through the thickness of the lower air homogenizing piece, and the second exhaust through hole part is communicated with the first exhaust through hole part; the even trough of gas portion of fourth has been seted up to the upper surface of even gas piece down, the even trough of gas portion of third with the even trough of gas portion of fourth sets up relatively to form the even passageway portion that flows of second, third inlet channel with the even passageway portion intercommunication of second, still set up third exhaust through hole portion down on the even gas piece, third exhaust through hole portion with the even passageway portion intercommunication of second, the even trough of gas portion of fourth with third exhaust through hole portion all with second exhaust through hole portion dislocation set.
2. The gas evening device according to claim 1, wherein the first gas evening groove part comprises at least one first main gas evening groove and a plurality of first branch gas evening grooves arranged at intervals, the second gas evening groove part comprises at least one second main gas evening groove and a plurality of second branch gas evening grooves arranged at intervals, the second main gas evening groove is arranged corresponding to the first main gas evening groove to form a first main flow channel, the plurality of second branch gas evening grooves are arranged opposite to the plurality of first branch gas evening grooves one to form a plurality of first branch flow channels at intervals, the first main gas evening channel is used for communicating the first gas inlet channel and the plurality of first branch flow channels, and the first main gas evening channel and the first branch flow channels form the first gas evening channel part;
the third gas homogenizing groove part comprises at least one third main gas homogenizing groove and a plurality of third gas homogenizing grooves arranged at intervals, the fourth gas homogenizing groove part comprises at least one fourth main gas homogenizing groove and a plurality of fourth gas homogenizing grooves arranged at intervals, the fourth main gas homogenizing groove and the third main gas homogenizing groove are arranged oppositely to form a second main gas homogenizing channel, the plurality of fourth gas homogenizing grooves and the plurality of third gas homogenizing grooves are arranged oppositely to form a plurality of second branch gas homogenizing channels at intervals, the second main gas homogenizing channel is used for communicating the second gas inlet channel and the plurality of second branch gas homogenizing channels, and the second main gas homogenizing channel and the second branch gas homogenizing channels form the second gas homogenizing channel part.
3. The gas evening device according to claim 2, wherein the first exhaust through hole part comprises a plurality of first exhaust through holes, the first exhaust through holes are formed in the bottoms of the second gas evening grooves, and the bottoms of the second gas evening grooves are provided with a plurality of first exhaust through holes at intervals; the second exhaust hole part comprises a plurality of second exhaust holes, and the second exhaust holes and the first exhaust holes are arranged in a one-to-one correspondence manner;
the third vent part comprises a plurality of third vent holes, the third vent holes are formed in the bottoms of the fourth gas homogenizing grooves, and a plurality of third vent through holes are formed at intervals in the bottoms of the fourth gas homogenizing grooves.
4. The gas evening device according to claim 2, wherein the first main gas evening groove and the second main gas evening groove are multiple, the multiple first main gas evening grooves and the multiple second main gas evening grooves are arranged in a one-to-one opposite manner to form multiple first main uniform flow channels, the multiple first main uniform flow channels are arranged in a cross manner, and the cross positions of the multiple first main uniform flow channels are communicated with the first gas inlet channel;
the plurality of first uniform flow channels extend in a direction parallel to the radial direction of the upper uniform gas piece, and each first uniform flow channel is communicated with one first main uniform flow channel.
5. The gas evening device according to claim 2, wherein the third main gas evening groove and the fourth main gas evening groove are multiple, the third main gas evening groove and the fourth main gas evening groove are arranged in a one-to-one opposite mode to form a plurality of second main uniform flow channels, the second main uniform flow channels are arranged in a cross mode, and the cross positions of the second main uniform flow channels are communicated with the second gas inlet channel;
the plurality of second branch uniform flow channels extend in a direction parallel to the radial direction of the middle uniform gas piece, and each second branch uniform flow channel is communicated with one second main uniform flow channel.
6. The gas evening device according to claim 3, wherein the caliber of the gas outlet of the second exhaust through hole is larger than the caliber of the gas inlet of the second exhaust through hole; the caliber of the air outlet of the third exhaust through hole is larger than that of the air inlet of the third exhaust through hole.
7. The gas distribution device of claim 1, wherein the surface roughness of the first, second, third, and fourth gas distribution grooves is less than ra0.4.
8. The gas uniformizing apparatus as recited in claim 1, further comprising a plurality of positioning members, wherein said upper gas uniformizing member and said middle gas uniformizing member are positioned and connected by two of said positioning members, and said middle gas uniformizing member and said lower gas uniformizing member are positioned and connected by two of said positioning members.
9. The gas uniformizing apparatus according to claim 8, wherein the lower surface of the upper gas uniformizing member and the upper surface of the middle gas uniformizing member, and the lower surface of the middle gas uniformizing member and the upper surface of the lower gas uniformizing member are all diffusion welded to fixedly connect the upper gas uniformizing member, the middle gas uniformizing member and the lower gas uniformizing member.
10. A semiconductor processing apparatus comprising a process chamber and the gas distribution apparatus of any of claims 1-9 disposed on the process chamber for delivering different process gases into the process chamber.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210617730.0A CN114893477A (en) | 2022-06-01 | 2022-06-01 | Semiconductor process equipment and gas homogenizing device thereof |
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| CN202210617730.0A CN114893477A (en) | 2022-06-01 | 2022-06-01 | Semiconductor process equipment and gas homogenizing device thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117438277A (en) * | 2023-12-19 | 2024-01-23 | 北京北方华创微电子装备有限公司 | Uniform flow component, air inlet device and semiconductor device |
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- 2022-06-01 CN CN202210617730.0A patent/CN114893477A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117438277A (en) * | 2023-12-19 | 2024-01-23 | 北京北方华创微电子装备有限公司 | Uniform flow component, air inlet device and semiconductor device |
| CN117438277B (en) * | 2023-12-19 | 2024-04-12 | 北京北方华创微电子装备有限公司 | Uniform flow component, air inlet device and semiconductor device |
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