CN106987826A - A kind of bicavate oif plasma depositing coating method - Google Patents
A kind of bicavate oif plasma depositing coating method Download PDFInfo
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- CN106987826A CN106987826A CN201710361467.2A CN201710361467A CN106987826A CN 106987826 A CN106987826 A CN 106987826A CN 201710361467 A CN201710361467 A CN 201710361467A CN 106987826 A CN106987826 A CN 106987826A
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- reaction chamber
- inlet channel
- process gas
- air inlet
- gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
Abstract
The invention discloses a kind of bicavate oif plasma depositing coating method, comprise the following steps：(1) vacuumize；(2) place substrate and be adjusted to required process station；(3) process gas is passed through into the first reaction chamber and the second reaction chamber, meanwhile, it is passed through nitrogen into purge gas inlet channel；(4) pressure in two reaction chambers is adjusted；(5) substrate is preheated, and radio frequency processing is carried out to process gas, process gas is formed plasma in the presence of radio frequency, plasma completes plated film in substrate surface film forming.This method passes through while process gas is passed through to the first reaction chamber and the second reaction chamber, nitrogen is passed through into purge gas inlet channel, the vacuum state of purge gas inlet channel is abolished, balance the pressure at two ends, the difference in the sedimentation rate that distribution of air flow inequality between two chambers is brought can be effectively eliminated, so as to improve the homogeneity of technique between wafer.
Description
Technical field
The present invention relates to semiconductor coated film technical field, a kind of bicavate oif plasma depositing coating side is specifically provided
Method.
Background technology
Existing bicavate plasma processing apparatus need to clean reaction chamber, specifically before deposition plating is carried out：Will be clear
Gas washing body sends into two reaction chambers by remote plasma generator by the road, after the completion of reaction chamber cleaning, need to will be instead
All pipelines in chamber and device are answered to vacuumize, afterwards, process gas is input into two reaction chambers with certain pressure
Room, however, because pipeline between plasma generator and chamber is vacuum state, understand some process gas backflow to
In above-mentioned pipeline, the gas flow backflowed carries randomness, and the gas between two reaction chambers can be caused to distribute uneven, cause two chambers
Difference in indoor sedimentation rate.
At present, continuing to develop with semiconductor technology, requirement to film performance is improved constantly, therefore, improve etc. from
Replicability and homogeneity between plasma process processing procedure wafer, as people's urgent problem to be solved.
The content of the invention
In consideration of it, it is an object of the invention to provide a kind of bicavate oif plasma depositing coating method, at least to solve
Existing bicavate oif plasma depositing coating method easily causes two chamber plated films and had differences, and homogeneity difference between wafer etc. is asked
Topic.
The invention provides a kind of bicavate oif plasma depositing coating method, comprise the following steps：
(1) the first reaction chamber, the second reaction chamber, purge gas inlet channel and process gas inlet channel are taken out very
It is empty；
(2) substrate is respectively fed in the first reaction chamber and the second reaction chamber, and is adjusted to required process station；
(3) process gas is passed through into the first reaction chamber and the second reaction chamber by process gas inlet channel, together
When, it is passed through nitrogen into purge gas inlet channel；
(4) pressure in two reaction chambers is adjusted to 1~10torr；
(5) substrate is preheated to 60~500 degrees Celsius, and to the process gas in the first reaction chamber and the second reaction chamber
Radio frequency processing is carried out, process gas is formed plasma in the presence of radio frequency, plasma is completed in substrate surface film forming
Plated film.
It is preferred that, in step 3, the consumption of nitrogen<=2000sccm.
Further preferably, in step 4, the pressure in two reaction chambers is adjusted to 1.5~6torr.
Further preferably, in steps of 5, preheating substrate is to 400 degrees Celsius.
Further preferably, the outlet of the air inlet of the purge gas inlet channel in step 1 and remote plasma generator
Mouthful connection, the gas outlet of the purge gas inlet channel for two and respectively with the first reaction chamber and the second reaction chamber
Air inlet is connected, air inlet and second reaction chamber of the air inlet away from the first reaction chamber of the purge gas inlet channel
The distance of air inlet is identical, and the air inlet of the process gas inlet channel is connected with process gas air inlet pipeline, the technique
The gas outlet of gas inlet passage is two and the air inlet with the first reaction chamber and the second reaction chamber is connected respectively, described
The distance phase of the air inlet of air inlet and second reaction chamber of the gas outlet of process gas inlet channel away from the first reaction chamber
Together.
Further preferably, two gas outlets of the process gas inlet channel are respectively communicated with purge gas inlet channel
Two gas outlets at.
The bicavate oif plasma depositing coating method that the present invention is provided, by being reacted to the first reaction chamber and second
While chamber is passed through process gas, nitrogen is passed through into purge gas inlet channel, purge gas air inlet can have been abolished and led to
The vacuum state in road, balances the pressure at two ends, process gas is evenly distributed to the first reaction chamber and the second reaction chamber, have
The difference in sedimentation rate that distribution of air flow inequality is brought between the reaction chamber of elimination first and the second reaction chamber of effect, so as to carry
The homogeneity of technique between high wafer, in addition, purge gas inlet channel is used as nitrogen inlet channel simultaneously so that this method can be with
Completed on existing bicavate plasma processing apparatus, and without changing the knot of existing bicavate plasma processing apparatus
Structure.
Brief description of the drawings
Below in conjunction with the accompanying drawings and embodiment the present invention is further detailed explanation：
Fig. 1 is the knot for the bicavate plasma processing apparatus that bicavate oif plasma depositing coating method of the present invention is used
Structure schematic diagram.
Embodiment
The invention provides a kind of bicavate oif plasma depositing coating method, comprise the following steps：
(1) the first reaction chamber, the second reaction chamber, purge gas inlet channel and process gas inlet channel are taken out very
It is empty；
(2) substrate is respectively fed in the first reaction chamber and the second reaction chamber, and is adjusted to required process station；
(3) process gas is passed through into the first reaction chamber and the second reaction chamber by process gas inlet channel, together
When, it is passed through nitrogen into purge gas inlet channel；
(4) pressure in two reaction chambers is adjusted to 1~10torr；
(5) substrate is preheated to 60~500 degrees Celsius, and to the process gas in the first reaction chamber and the second reaction chamber
Radio frequency processing is carried out, process gas is formed plasma in the presence of radio frequency, plasma is completed in substrate surface film forming
Plated film.
The bicavate oif plasma depositing coating method, by being passed through work to the first reaction chamber and the second reaction chamber
While skill gas, nitrogen is passed through into purge gas inlet channel, the vacuum shape of purge gas inlet channel can have been abolished
State, balances the pressure at two ends, process gas is evenly distributed to the first reaction chamber and the second reaction chamber, effectively eliminates the
The difference in sedimentation rate that distribution of air flow inequality is brought between one reaction chamber and the second reaction chamber, so as to improve work between wafer
The homogeneity of skill, in addition, purge gas inlet channel is used as nitrogen inlet channel simultaneously so that this method can be existing double
Completed on cavate plasma processing apparatus, and without changing the structure of existing bicavate plasma processing apparatus.
It is used as the improvement of technical scheme, in step 3, the consumption of nitrogen<=2000sccm, is purge gas inlet channel
Certain pressure is brought, prevents process gas from being flowed back and crossfire in purge gas inlet channel.
As the improvement of technical scheme, in step 4, pressure in two reaction chambers of adjustment to 1.5~6torr.
As the improvement of technical scheme, in steps of 5, preheating substrate is to 400 degrees Celsius.
In order to ensure that nitrogen or process gas equivalent are distributed to the first reaction chamber and the second reaction chamber, technical side is used as
The improvement of case, as shown in figure 1, the air inlet of purge gas inlet channel 1 and going out for remote plasma generator 2 in step 1
Gas port is connected, the gas outlet of the purge gas inlet channel 1 for two and respectively with the first reaction chamber 3 and the second reaction chamber
The air inlet connection of room 4, air inlet and second of the air inlet away from the first reaction chamber 3 of the purge gas inlet channel 1 is anti-
Answer the distance of the air inlet of chamber 4 identical, air inlet and the process gas air inlet pipeline of the process gas inlet channel 5 connect
It is logical, the gas outlet of the process gas inlet channel 5 for two and respectively with the first reaction chamber 3 and the second reaction chamber 4
Air inlet is connected, air inlet and second reaction chamber of the gas outlet away from the first reaction chamber 3 of the process gas inlet channel 5
The distance of 4 air inlet is identical.
As the improvement of technical scheme, two gas outlets of the process gas inlet channel 5 are respectively communicated with purgative gas
At two gas outlets of body inlet channel 1.
Embodiment 1
A kind of bicavate oif plasma depositing coating method, using existing bicavate plasma processing apparatus, specifically
Comprise the following steps：
(1) the first reaction chamber, the second reaction chamber, purge gas inlet channel and process gas inlet channel are taken out very
It is empty；
(2) silicon chip is respectively fed in the heating dish in the first reaction chamber and the second reaction chamber；
(3) silane and an oxidation are passed through into the first reaction chamber and the second reaction chamber by process gas inlet channel
The mixed gas of phenodiazine；
(4) pressure in two reaction chambers is adjusted to 10torr；
(5) preheating silicon chip is carried out to 60 degrees Celsius, and to the process gas in the first reaction chamber and the second reaction chamber
Radio frequency processing, makes process gas form plasma in the presence of radio frequency, and plasma is thin in silicon chip surface formation silica
Film, completes plated film.
Embodiment 2
A kind of bicavate oif plasma depositing coating method, is with the difference of embodiment 1：
1st, in step (3), it is passed through by process gas inlet channel into the first reaction chamber and the second reaction chamber
The mixed gas of silane and nitrous oxide, meanwhile, it is passed through by remote plasma generator into purge gas inlet channel
Nitrogen, the consumption of nitrogen is 2000sccm.
Embodiment 3
A kind of bicavate oif plasma depositing coating method, specifically includes following steps：
(1) the first reaction chamber, the second reaction chamber, purge gas inlet channel and process gas inlet channel are taken out very
It is empty；
(2) silicon chip is respectively fed in the heating dish in the first reaction chamber and the second reaction chamber；
(3) silane and ammonia are passed through into the first reaction chamber and the second reaction chamber by process gas inlet channel
Mixed gas, meanwhile, nitrogen is passed through into purge gas inlet channel by remote plasma generator, the consumption of nitrogen is
1000sccm；
(4) pressure in two reaction chambers is adjusted to 1torr；
(5) preheating silicon chip is carried out to 500 degrees Celsius, and to the process gas in the first reaction chamber and the second reaction chamber
Radio frequency processing, makes process gas form plasma in the presence of radio frequency, and plasma is thin in silicon chip surface formation silicon nitride
Film, completes plated film.
Wherein, the purge gas inlet channel 1 for the bicavate plasma processing apparatus (as shown in Figure 1) that this method is used
Air inlet connected with the gas outlet of remote plasma generator 2, the gas outlet of the purge gas inlet channel 1 for two and
The air inlet with the first reaction chamber 3 and the second reaction chamber 4 is connected respectively, the air inlet of the purge gas inlet channel 1
The distance of the air inlet of air inlet and the second reaction chamber 4 away from the first reaction chamber 3 is identical, the process gas inlet channel
5 air inlet is connected with process gas air inlet pipeline, and the gas outlet of the process gas inlet channel 5 is for two and respectively with the
One reaction chamber 3 is connected with the air inlet of the second reaction chamber 4, and the gas outlet of the process gas inlet channel 5 is anti-away from first
Answer the distance of the air inlet of chamber 3 and the air inlet of the second reaction chamber 4 identical.
Embodiment 4
It is with the difference of embodiment 3：
1st, in step (3), it is passed through by process gas inlet channel into the first reaction chamber and the second reaction chamber
The mixed gas of silane and ammonia, meanwhile, nitrogen, nitrogen are passed through into purge gas inlet channel by remote plasma generator
The consumption of gas is 500sccm.
2nd, in step (4), the pressure in two reaction chambers of adjustment is to 1.5torr；
3rd, in step (5), preheating silicon chip is to 400 degrees Celsius；
4th, the process gas inlet channel 5 of the bicavate plasma processing apparatus (as shown in Figure 1) that this method is used
Two gas outlets are respectively communicated with two gas outlets of purge gas inlet channel 1.
Embodiment 5
It is with the difference of embodiment 4：
1st, in step (4), the pressure in two reaction chambers of adjustment is to 6torr.
Embodiment 6
Using the deposition plating method 1000 times each to substrate plated film respectively of embodiment 1 to embodiment 5, statistics is using every kind of
During film plating process, the average value of the difference percentage of the first reaction chamber and the second reaction chamber film deposition rate, such as following table：
As can be seen from the above table, during deposition plating, work is being passed through into the first reaction chamber and the second reaction chamber
During skill gas, while being passed through nitrogen into purge gas inlet channel, the film deposition rate processed can be made quite, two
The difference of chamber is less than 1%.
Claims (6)
1. a kind of bicavate oif plasma depositing coating method, it is characterised in that comprise the following steps：
(1) the first reaction chamber, the second reaction chamber, purge gas inlet channel and process gas inlet channel are vacuumized；
(2) substrate is respectively fed in the first reaction chamber and the second reaction chamber, and is adjusted to required process station；
(3) process gas is passed through into the first reaction chamber and the second reaction chamber by process gas inlet channel, meanwhile, to
Nitrogen is passed through in purge gas inlet channel；
(4) pressure in two reaction chambers is adjusted to 1~10torr；
(5) preheating substrate is carried out to 60~500 degrees Celsius, and to the process gas in the first reaction chamber and the second reaction chamber
Radio frequency processing, makes process gas form plasma in the presence of radio frequency, and plasma completes plating in substrate surface film forming
Film.
2. according to the bicavate oif plasma depositing coating method described in claim 1, it is characterised in that：In step 3, nitrogen
Consumption<=2000sccm.
3. according to the bicavate oif plasma depositing coating method described in claim 1, it is characterised in that：In step 4, adjust
Pressure in two reaction chambers is to 1.5~6torr.
4. according to the bicavate oif plasma depositing coating method described in claim 1, it is characterised in that：In steps of 5, preheat
Substrate is to 400 degrees Celsius.
5. according to the bicavate oif plasma depositing coating method any one of Claims 1-4, it is characterised in that：Step
The air inlet of purge gas inlet channel in rapid 1 is connected with the gas outlet of remote plasma generator, and the purge gas is entered
The gas outlet of gas passage is two and the air inlet with the first reaction chamber and the second reaction chamber is connected respectively, the purgative gas
The distance of the air inlet of air inlet and second reaction chamber of the air inlet of body inlet channel away from the first reaction chamber is identical, described
The air inlet of process gas inlet channel is connected with process gas air inlet pipeline, and the gas outlet of the process gas inlet channel is
Two and the air inlet with the first reaction chamber and the second reaction chamber is connected respectively, the outlet of the process gas inlet channel
The distance of the air inlet of air inlet and second reaction chamber of the mouth away from the first reaction chamber is identical.
6. according to the bicavate oif plasma depositing coating method described in claim 5, it is characterised in that：The process gas enters
Two gas outlets of gas passage are respectively communicated with two gas outlets of purge gas inlet channel.
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| CN201710361467.2A CN106987826B (en) | 2017-05-22 | 2017-05-22 | A kind of bicavate oif plasma depositing coating method |
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| CN201710361467.2A CN106987826B (en) | 2017-05-22 | 2017-05-22 | A kind of bicavate oif plasma depositing coating method |
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| CN106987826A true CN106987826A (en) | 2017-07-28 |
| CN106987826B CN106987826B (en) | 2019-03-12 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107910250A (en) * | 2017-11-16 | 2018-04-13 | 德淮半导体有限公司 | Wafer processing apparatus and method |
| CN108315720A (en) * | 2018-01-31 | 2018-07-24 | 上海集成电路研发中心有限公司 | A kind of device and method improving film thickness uniformity |
| CN113818002A (en) * | 2020-06-19 | 2021-12-21 | 拓荆科技股份有限公司 | Film preparation method |
| CN113818006A (en) * | 2020-06-19 | 2021-12-21 | 拓荆科技股份有限公司 | Film preparation method |
| CN114215984A (en) * | 2021-12-14 | 2022-03-22 | 拓荆科技股份有限公司 | Semiconductor equipment and gas conveying structure thereof |
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| CN103459660A (en) * | 2011-04-07 | 2013-12-18 | 皮考逊公司 | Deposition reactor with plasma source |
| CN103632998A (en) * | 2013-11-22 | 2014-03-12 | 沈阳拓荆科技有限公司 | Plasma processing device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20030230385A1 (en) * | 2002-06-13 | 2003-12-18 | Applied Materials, Inc. | Electro-magnetic configuration for uniformity enhancement in a dual chamber plasma processing system |
| KR101111556B1 (en) * | 2004-07-29 | 2012-02-24 | 니혼 에이 에스 에무 가부시키가이샤 | Dual-chamber plasma processing apparatus |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107910250A (en) * | 2017-11-16 | 2018-04-13 | 德淮半导体有限公司 | Wafer processing apparatus and method |
| CN108315720A (en) * | 2018-01-31 | 2018-07-24 | 上海集成电路研发中心有限公司 | A kind of device and method improving film thickness uniformity |
| CN113818002A (en) * | 2020-06-19 | 2021-12-21 | 拓荆科技股份有限公司 | Film preparation method |
| CN113818006A (en) * | 2020-06-19 | 2021-12-21 | 拓荆科技股份有限公司 | Film preparation method |
| CN113818006B (en) * | 2020-06-19 | 2023-11-17 | 拓荆科技股份有限公司 | Film preparation method |
| CN114215984A (en) * | 2021-12-14 | 2022-03-22 | 拓荆科技股份有限公司 | Semiconductor equipment and gas conveying structure thereof |
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| CN106987826B (en) | 2019-03-12 |
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