CN109576674B

CN109576674B - Atomic layer deposition apparatus

Info

Publication number: CN109576674B
Application number: CN201811587575.2A
Authority: CN
Inventors: 赵雷超; 史小平; 兰云峰; 秦海丰; 纪红; 张文强
Original assignee: Beijing Naura Microelectronics Equipment Co Ltd
Current assignee: Beijing Naura Microelectronics Equipment Co Ltd
Priority date: 2018-12-25
Filing date: 2018-12-25
Publication date: 2021-07-13
Anticipated expiration: 2038-12-25
Also published as: CN109576674A

Abstract

The invention discloses atomic layer deposition equipment which comprises a reaction chamber, a main gas inlet pipeline connected with the reaction chamber, a supply source bottle and a recovery source bottle which are respectively connected into the main gas inlet pipeline, and a control device for controlling the temperature of the supply source bottle and the recovery source bottle, wherein when the main gas inlet pipeline is opened, the supply source bottle provides a first precursor, and carrier gas carries the first precursor and is introduced into the reaction chamber through the main gas inlet pipeline; when the main air inlet pipeline is closed, the supply source bottle is communicated with the recovery source bottle through the recovery pipeline, and the recovery source bottle condenses and recovers the first precursor provided by the supply source bottle to realize the recovery and storage of the precursor.

Description

Atomic layer deposition apparatus

Technical Field

The invention relates to the technical field of semiconductor manufacturing, in particular to atomic layer deposition equipment.

Background

Tantalum nitride (TaN) has the characteristics of high thermal stability, high melting point, excellent conductivity and adhesion, and the like, so that it becomes a good barrier layer material in the IC field, such as being applied to a copper diffusion barrier (copper diffusion barrier).

Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD) are the main methods for depositing TaN thin films. However, compared with the conventional thin film deposition technology, the Atomic Layer Deposition (ALD) technology has attracted attention because of its advantages of precise thin film control, excellent uniformity, high step coverage, and dense thin film. Particularly, with the reduction of the feature size of the device and the technological development trend of continuously improving the aspect ratio of the hole, the TaN film deposited by the atomic layer has wider application prospect.

Atomic layer deposition is a technique for forming a deposited film by alternately pulsing reactive precursors into a reaction chamber and chemisorbing and reacting on a substrate. When the reactive precursors reach the substrate surface, they chemisorb and surface reactions occur on the surface.

Precursors for atomic layer deposition to prepare TaN mainly include tantalum halides, such as tantalum pentafluoride (TaF5), tantalum pentachloride (TaCl5), etc., or organometallic tantalum compounds, such as tert-butyl imino tris (diethylamino) tantalum (TBTDET), pentakis (dimethylamino) tantalum (PDMAT), pentakis (diethylamino) tantalum (PDEAT), etc. Meanwhile, NH3, N2/H2 mixed gas and the like are used as nitrogen sources, and the reaction temperature and the deposition pressure are respectively controlled at 200-300 ℃ and 1-8 torr for reaction.

The existing atomic layer deposition equipment has the following defects: in the ALD deposition reaction, in order to ensure that the precursor has good fluidity and prevent the quality of the prepared film from being influenced by the large fluctuation of the amount of the precursor introduced into the reaction chamber caused by the pressure build-up of the airflow. The process usually adopts a process mode that the precursor is introduced into the reaction chamber when the precursor is needed to be deposited and is directly discharged into a vacuum pump when the precursor is not needed to be deposited, so that the consumption of the precursor is greatly increased, and the cost of industrial production is increased.

Disclosure of Invention

In view of the above, an object of the present invention is to provide an atomic layer deposition apparatus, which can recycle a precursor that is not introduced into a reaction chamber, improve the utilization rate of the precursor, and reduce the industrial production cost.

According to an embodiment of the present invention, an atomic layer deposition apparatus includes: the device comprises a reaction chamber and a main gas inlet pipeline connected with the reaction chamber; the supply source bottle and the recovery source bottle are respectively connected to the main air inlet pipeline; and the control device is used for controlling the temperature of the supply source bottle and the temperature of the recovery source bottle, when the main air inlet pipeline is opened, a carrier gas carries a first precursor to be introduced into the reaction chamber through the main air inlet pipeline, the supply source bottle provides the first precursor, when the main air inlet pipeline is closed, the supply source bottle and the recovery source bottle are communicated through a recovery pipeline, and the recovery source bottle condenses and recovers the first precursor provided by the supply source bottle.

Preferably, the supply source bottle is connected to the main air inlet pipeline through a first transmission pipeline, the recovery source bottle is connected to the main air inlet pipeline through a second transmission pipeline, and the opening and closing of the first transmission pipeline, the second transmission pipeline and the main air inlet pipeline are respectively controlled by a first valve, a second valve, a third valve and a fourth valve.

Preferably, the supply bottle and the recovery bottle are functionally interchanged when the content of the first precursor in the supply bottle is below a set threshold.

Preferably, the control device includes: a first temperature module to control a temperature of the supply bottle such that the first precursor is in a gaseous state in the supply bottle; and the second temperature module is used for controlling the temperature of the recovery source bottle so that the first precursor is in a liquid state or a solid state in the recovery source bottle.

Preferably, the control device further includes: a third temperature module for controlling the temperature of the main intake duct, the first transport duct, and the second transport duct such that the main intake duct, the first transport duct, and the second transport duct transport gaseous substances.

Preferably, the atomic layer deposition apparatus further comprises: the system comprises a vacuum pump and a main exhaust pipeline communicated with the vacuum pump; and the first exhaust pipeline is connected between the recovery source bottle and the vacuum pump, and when the main air inlet pipeline is closed, the recovery source bottle releases the carrier gas through the first exhaust pipeline and the main exhaust pipeline.

Preferably, the atomic layer deposition equipment further comprises a third conveying pipeline, and purge gas enters the reaction chamber through the third conveying pipeline and a main gas inlet pipeline and purges the reaction chamber.

Preferably, the atomic layer deposition equipment further comprises a fourth conveying pipeline, a second precursor enters the reaction chamber through the fourth conveying pipeline, and the second precursor is used for reacting with the first precursor to generate a thin film.

Preferably, the atomic layer deposition equipment further comprises a second exhaust pipeline, and when the fourth conveying pipeline is closed, the second precursor enters the vacuum pump through the second exhaust pipeline.

Preferably, the first precursor is a metal precursor.

The atomic layer deposition equipment provided by the embodiment of the invention comprises a supply source bottle, a recovery source bottle and a control device for controlling the temperature of the supply source bottle and the recovery source bottle. When the main gas inlet pipeline is opened, the supply source bottle provides a first precursor, and the carrier gas carries the first precursor and is introduced into the reaction chamber through the main gas inlet pipeline; when the main air inlet pipeline is closed, the supply source bottle is communicated with the recovery source bottle through the recovery pipeline, and the recovery source bottle condenses and recovers the first precursor provided by the supply source bottle to realize the recovery and storage of the precursor.

In a preferred embodiment, when the content of the first precursor in the supply source bottle is lower than a set threshold value, the functions of the supply source bottle and the recovery source bottle are interchanged, so that the precursor can be reused for multiple times, the utilization rate of the precursor is improved, and the industrial production cost is reduced.

Drawings

The above and other objects, features and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings.

FIG. 1 shows a schematic structural diagram of an atomic layer deposition apparatus according to the prior art;

FIG. 2 shows a schematic of a saturated vapor pressure curve for PDMAT;

FIG. 3 shows a schematic flow diagram of an atomic layer deposition method according to the prior art;

FIG. 4 is a schematic structural diagram of an atomic layer deposition apparatus according to a first embodiment of the invention;

fig. 5 shows a schematic flow diagram of an atomic layer deposition method according to a second embodiment of the invention.

The figure includes: a reaction chamber 1; a gas distribution device 2; heating the susceptor 3; a substrate 4; a source bottle 5; a first source bottle 51; a second source vial 52; a butterfly valve 6; a vacuum pump 7; a second precursor 11; a first gas 12; a second gas 13; a main intake duct 31; a main exhaust duct 32;

transfer pipes

33, 36, 37, 371, 372, 373, and 374;

exhaust ducts

321, 322, 34, and 35;

temperature modules

41, 42, 511, 512, and 513; and

pneumatic valves

211, 212, 221, 222, 241, 242, 23, 25, 26, and 27.

Detailed Description

The invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by like reference numerals. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale. Moreover, certain well-known elements may not be shown in the figures.

In the following description, numerous specific details of the invention, such as structure, materials, dimensions, processing techniques and techniques of components, are set forth in order to provide a more thorough understanding of the invention. However, as will be understood by those skilled in the art, the present invention may be practiced without these specific details.

Fig. 1 shows a schematic structural diagram of an atomic layer deposition apparatus according to the prior art. As shown in fig. 1, the atomic layer deposition apparatus includes a reaction chamber 1, a source bottle 5, a vacuum pump 7, and gas transfer pipes connected between the respective devices.

The reaction chamber 1 includes a gas distributor 2 (shower head) and a heated susceptor 3, the heated susceptor 3 being used to support a substrate 4 on which a thin film is deposited during a process (wafer) 4. The source bottle 5 is used to load a first precursor (e.g., PDMAT).

One end of the transfer pipe 33 is connected to the reaction chamber 1, and the other end is connected to a source bottle containing the second precursor 11. The second precursor 11 is typically ammonia (NH)₃) For chemical reaction with a first precursor (e.g., PDMAT) to form a thin film.

One end of the transfer pipe 37 is connected to the source bottle 5, the other end is connected to the source of the first gas 12, one end of the transfer pipe 36 is connected to the main gas inlet pipe 31, and the other end is connected to the source of the second gas 13. The first gas 12 and the second gas 13 are typically inert gases such as high purity nitrogen, and are used as carrier gases to carry the first precursor into the reaction chamber 1 during the first precursor supplying stage, so that the first precursor can be uniformly adsorbed on the substrate 4 in the reaction chamber 1 by sufficient diffusion. The second gas 13 may also be used to purge the reaction chamber 1 as a purge gas after the precursor supply is finished.

The existing atomic layer deposition apparatus further includes a main exhaust duct 32, an exhaust duct 34, and an exhaust duct 35. One end of the main exhaust duct 32 is connected to the main intake duct 31, and the other end is connected to the vacuum pump 7. One end of the exhaust pipe 34 is connected to the second precursor 11, and the other end is connected to the vacuum pump 7. The reaction chamber 1 is connected to a vacuum pump 7 through an exhaust line 35, and a butterfly valve 6 is located on the exhaust line 35 for controlling the pressure in the reaction chamber 1.

The

temperature modules

41 and 42 are used to control the temperature of the source bottle 5 and the main gas inlet pipe 31, respectively, to ensure that the first precursor in the source bottle 5 and the main gas inlet pipe 31 is in a gaseous state during the process.

The reaction sources used in the prior art ALD deposition of tantalum nitride are typically PDMAT and ammonia (NH)₃) PDMAT has a lower saturated vapor pressure than a liquid source, since it is a solid source. As shown in FIG. 2, the saturated vapor pressure of PDMAT can reach about 1torr at 90 ℃; at 10 ℃, the saturated vapor pressure is substantially 0 torr. Therefore, during the atomic layer deposition process, the temperature of the temperature module 41 is controlled to be about 90 ℃, and the temperature of the temperature module 42 is controlled to be 90-120 ℃.

The conventional ALD deposition of tantalum nitride generally employs a first precursor (e.g. PDMAT) and a second precursor (e.g. ammonia gas) to react on the substrate surface to obtain a thin film, and the complete process flow is shown in fig. 3, and includes the following steps:

in step S101, relevant growth parameters are set. The method specifically comprises the following steps: the temperature of the atomic layer deposition process is controlled to 200 to 325 ℃, the reaction pressure is set to 0.5 to 10 torr, and the transfer rates of the first gas 12 and the second gas 13 (high purity nitrogen or inert gas) are set to 10 to 5000 standard ml/min.

In step S102, a first precursor (e.g., PDMAT) enters the reaction chamber. The method specifically comprises the following steps: the

valves

21, 22 and 23 are opened and a flow of the first gas 12 (typically 20-1000 ml/min) is carried along the first precursor into the reaction chamber 1 through the main gas inlet line 31. At the same time, the valve 27 is opened, and a certain flow rate of the second gas 13 (typically 20-100 ml/min) is mixed with the first gas 12 carrying the first precursor through the transfer pipe 36 above the reaction chamber 1, and the mixed gas enters the reaction chamber 1 together. At this time, the

valves

24 and 25 are closed, the valve 26 is opened, and a certain flow rate of the second precursor (typically 200-. Generally, the first precursor is introduced into the reaction chamber for 5 ms to 30 s to achieve saturation adsorption in the reaction chamber 1.

In step S103, the reaction chamber is purged. The method specifically comprises the following steps: on the basis of step S102, the valve 23 is closed, the valve 24 is opened, and the second gas 13 (e.g., inert gas such as nitrogen) purges the reaction chamber 1 for 1 second to 3 minutes.

In step S104, a second precursor (e.g., ammonia gas) is introduced into the reaction chamber. The method specifically comprises the following steps: on the basis of step S103, the valve 26 is closed, the valve 25 is opened, and a certain flow rate of the second precursor (generally 200-. The second precursor is introduced into the reaction chamber for 100 milliseconds to 30 seconds to achieve saturated adsorption in the chamber.

In step S105, the reaction chamber is purged. The specific process comprises the following steps: on the basis of step S104, the valve 25 is closed, the valve 26 is opened, and the second gas 13 purges the reaction chamber 1 for a time period of 1 second to 30 seconds.

In step S106, it is determined whether the film has reached the desired thickness, and if so, the process is terminated; if the desired thickness is not reached, the process returns to step S102.

An atomic layer deposition apparatus according to an embodiment of the present invention is described below with reference to the drawings.

Fig. 4 shows a schematic structural diagram of an atomic layer deposition apparatus according to a first embodiment of the invention. As shown in fig. 4, the ald apparatus includes a reaction chamber 1, a butterfly valve 6, a vacuum pump 7, a control device, a first source bottle 51 and a second source bottle 52, and a gas transmission pipeline connecting the devices.

The reaction chamber 1 includes a gas distributor 2 (shower head) and a heated susceptor 3, and a thin film is deposited on a substrate 4. The reaction chamber 1 is connected with a butterfly valve 6 and a vacuum pump 7 through an exhaust pipe 35, and the butterfly valve 6 is mainly used for controlling the pressure in the reaction chamber 1. The control device is mainly used to control the temperature in the first source bottle 51 and the second source bottle 52.

Transfer lines

371 and 372 have one end connected to main gas inlet line 31 and the other end connected to first source bottle 51 and second source bottle 52, respectively, and main gas inlet line 31 has the other end connected to reaction chamber 1.

Transfer lines

373 and 374 are connected at one end to the first and

second source bottles

51 and 52, respectively, and at the other end to a source of the first gas 12. One end of the transfer line 36 is connected to the main inlet line 31 and the other end is connected to a source of the second gas 13. The first gas 12 and the second gas 13 are typically inert gases such as high purity nitrogen, and are used as carrier gases to carry the first precursor into the reaction chamber 1 during the first precursor supplying stage, so that the first precursor can be uniformly adsorbed on the substrate 4 in the reaction chamber 1 by sufficient diffusion. The second gas 13 may also be used to purge the reaction chamber 1 as a purge gas after the precursor supply is finished.

When the main gas inlet pipe 31 is opened, the carrier gas carries the first precursor and is introduced into the reaction chamber 1 through the main gas inlet pipe 31, and one of the first source bottle 51 and the second source bottle 52 serves as a supply source bottle for supplying the first precursor. When the main gas inlet pipe 31 is closed, the first source bottle 51 and the second source bottle 52 are communicated with each other, and the other of the first source bottle 51 and the second source bottle 52 is used as a recovery source bottle for condensing and recovering the first precursor supplied from the supply source bottle.

Taking the first source bottle 51 as a supply source bottle and the second source bottle 52 as a recovery source bottle, when the main gas inlet 31 is opened, the first source bottle 51 supplies the first precursor to the reaction chamber 1 through the transfer line 371 and the main gas inlet 31. When the main gas inlet pipe 31 is closed, the second source bottle 52 condenses and recovers the first precursor in the first source bottle 51 through the transmission pipe 371 and the transmission pipe 372, so that the supply continuity of the first precursor can be ensured, and the influence on the quality of the film due to the fluctuation of the amount of the first precursor introduced into the reaction chamber caused by the pressure build-up of the gas can be avoided.

Further, the control device comprises a temperature module 511 and a temperature module 512, and the temperature module 511 and the temperature module 512 are used for controlling the temperature of the first source bottle 51 and the second source bottle 52 respectively, so that the first precursor is in a gaseous state in the supply source bottle and in a liquid state or a solid state in the recovery source bottle.

Illustratively, the first source bottle 51 is used as a supply source bottle, the second source bottle 52 is used as a recovery source bottle, the temperature of the first source bottle 51 is set to 90 ℃ by the temperature module 511, and the temperature of the second source bottle 52 is set to 10 ℃ by the temperature module 512. Because PDMAT is a solid source and has lower saturated vapor pressure than a liquid source, the saturated vapor pressure of PDMAT can reach about 1torr (torr) at 90 ℃; at 10 ℃, the saturated vapor pressure is substantially 0 torr. Thus, gaseous first precursor is available in the first source bottle 51 and solid first precursor is available in the second source bottle 52.

Further, the control device further comprises a temperature module 513, wherein the temperature module 513 is configured to control the temperature of the main gas inlet pipe 31, the transmission pipe 371 and the transmission pipe 372, so that the main gas inlet pipe 31, the transmission pipe 371 and the transmission pipe 372 transmit the gaseous substance.

Further, the atomic layer deposition apparatus further includes an exhaust pipe 321, an exhaust pipe 322, and a main exhaust pipe 32. The main exhaust line 32 is connected to the vacuum pump 7, the exhaust line 321 is connected between the first source bottle 51 and the vacuum pump 7, and the exhaust line 322 is connected between the second source bottle 52 and the vacuum pump 7. When the main air intake duct 31 is closed, the recovery source bottle communicates with the vacuum pump 7 through the exhaust duct 321 or the exhaust duct 322, and the supply source bottle is disconnected from the vacuum pump 7.

Illustratively, the first source bottle 51 serves as a supply source bottle, the second source bottle 52 serves as a recovery source bottle, and when the main air intake duct 31 is disconnected, the second source bottle 52 discharges an excessive amount of carrier gas into the vacuum pump 7 through the exhaust duct 322 and the main exhaust duct 32. In some embodiments, the first source bottle 51 serves as a recovery source bottle and the second source bottle 52 serves as a supply source bottle, and when the main gas inlet pipe 31 is disconnected, the first source bottle 51 discharges excess carrier gas into the vacuum pump 7 through the gas discharge pipe 321 and the main gas discharge pipe 32.

Further, the atomic layer deposition apparatus further includes a transmission pipeline 33, and the second precursor 11 enters the reaction chamber 1 through the transmission pipeline 33. The second precursor 11 is, for example, ammonia (NH3) and is used to chemically react with the first precursor to form a thin film on the substrate in the reaction chamber 1.

The atomic layer deposition equipment further comprises an exhaust pipeline 34, and the second precursor can be exhausted into the vacuum pump 7 through the exhaust pipeline 34 when the second precursor is not required to participate in the reaction, so that the continuity of the supply of the second precursor in the process is ensured.

Further, the first source bottle and the second source bottle are functionally interchanged when the content of the first precursor in the supply source bottle is lower than a set threshold value. Taking the first source bottle 51 as a supply source bottle and the second source bottle 52 as a recovery source bottle as an example, when the first precursor in the first source bottle 51 is exhausted, the temperature of the first source bottle 51 is set to 10 ℃ by the temperature module 511, the temperature of the second source bottle 52 is set to 90 ℃ by the temperature module 512, the second source bottle 52 is used as a supply source bottle to supply the first precursor to the reaction chamber 1, the first source bottle 51 is used as a recovery source bottle to condense and recover the first precursor supplied from the supply source bottle, and then the first source bottle 51 and the second source bottle 52 alternately supply and recover the first precursor, so that the precursor can be reused for multiple times, and the utilization rate of the precursor is improved.

Fig. 5 shows a process flow diagram of an atomic layer deposition method according to a second embodiment of the present invention, which will be described below with reference to fig. 4 and 5. In fig. 4, the first source bottle 51 is a supply source bottle, and the second source bottle 52 is a recovery source bottle. As shown in fig. 5, the atomic layer deposition method includes the steps of:

in step S201, relevant growth parameters are set. The method specifically comprises the following steps: the temperature of the atomic layer deposition process is controlled to 200 to 325 ℃, the reaction pressure is set to 0.5 to 10 torr, and the transfer rates of the first gas 12 and the second gas 13 (high purity nitrogen or inert gas) are set to 10 to 5000 standard ml/min.

In step S202, a first precursor (e.g., PDMAT) enters the reaction chamber. The method specifically comprises the following steps: the temperature of the first source bottle 51 is set to 90 c,

valves

221, 211 and 23 are opened, and a flow of first gas 12 (typically 20-1000 ml/min) carries the first precursor into the reaction chamber 1 via transfer line 371 and main gas inlet line 31. At the same time, the valve 27 is opened, and a certain flow rate of the second gas 13 (generally 20-100 ml/min) is mixed with the carrier gas carrying the first precursor through the transfer pipe 36 above the reaction chamber 1, and the mixed gas enters the reaction chamber 1. Meanwhile, the

valves

241, 242 and 25 are closed, the valve 26 is opened, and a certain flow rate of the second precursor (generally 200-. Generally, the first precursor is introduced into the reaction chamber for 5 milliseconds to 30 seconds to achieve saturated adsorption in the reaction chamber.

In this step, the method further comprises the step of interchanging the functions of the first source bottle and the second source bottle when the content of the first precursor in the supply source bottle is lower than a set threshold value. For example, when the first precursor in the first source bottle 51 is exhausted, the temperature of the first source bottle 51 is set to 10 ℃ by the temperature module 511, the temperature of the second source bottle 52 is set to 90 ℃ by the temperature module 512, the

valves

222, 212, and 23 are opened, and the

valves

221 and 211 are closed. The second source bottle 52 will be used as a supply bottle to supply the first precursor to the reaction chamber 1, the first source bottle 51 will be used as a recovery source bottle to condense and recover the first precursor supplied from the supply bottle, and then the first source bottle 51 and the second source bottle 52 alternately supply and recover the first precursor, so that the precursor can be reused for many times, and the utilization rate of the precursor can be improved.

In step S203, the reaction chamber is purged. The method specifically comprises the following steps: in step S202, the valve 23 is closed, and the reaction chamber 1 is purged with a certain flow rate of the second gas 13 (e.g., inert gas such as nitrogen) for 1 second to 3 minutes. While

valves

212 and 242 are open, carrier gas carries the first precursor through transfer line 371 and transfer line 372 into second source bottle 52 for re-condensation and retention in second source bottle 52, and excess carrier gas enters vacuum pump 7 through exhaust line 322 and main exhaust line 32.

In step S204, a second precursor enters the reaction chamber. The method specifically comprises the following steps: on the basis of step S203, the valve 26 is closed, the valve 25 is opened, and a certain flow rate of the second precursor (typically 200-. Generally, the second precursor is introduced into the reaction chamber for 100 milliseconds to 30 seconds to achieve saturated adsorption in the chamber.

In this step, high purity reactant ammonia gas is pulsed into the reaction chamber 1 as a second precursor. High-purity ammonia gas is adopted to react with PDMAT adsorbed on the surface of the substrate to generate the tantalum nitride film without using inert gas as carrier gas.

In step S205, the reaction chamber is purged. The specific process comprises the following steps: in step S204, the valve 25 is closed, the valve 26 is opened, and the reaction chamber 1 is purged with a certain flow rate of the second gas 13 (such as inert gas like nitrogen) for 1 second to 30 seconds.

In step S206, it is determined whether the film thickness reaches the desired thickness, and if so, the process is terminated; if the desired thickness is not reached, the process returns to step S202.

In summary, the atomic layer deposition apparatus provided by the embodiment of the invention includes a supply source bottle, a recovery source bottle, and a control device for controlling the temperature of the supply source bottle and the recovery source bottle. When the main gas inlet pipeline is opened, the supply source bottle provides a first precursor, and the carrier gas carries the first precursor and is introduced into the reaction chamber through the main gas inlet pipeline; when the main air inlet pipeline is closed, the supply source bottle is communicated with the recovery source bottle through the recovery pipeline, and the recovery source bottle condenses and recovers the first precursor provided by the supply source bottle to realize the recovery and storage of the precursor.

In a preferred embodiment, when the first precursor in the supply bottle is exhausted, the functions of the supply bottle and the recovery bottle are interchanged, so that the precursor can be reused for multiple times, the utilization rate of the precursor is improved, and the industrial production cost is reduced.

It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

While embodiments in accordance with the invention have been described above, these embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments described. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications as are suited to the particular use contemplated. The invention is limited only by the claims and their full scope and equivalents.

Claims

1. An atomic layer deposition apparatus, comprising:

the device comprises a reaction chamber and a main gas inlet pipeline connected with the reaction chamber;

the supply source bottle and the recovery source bottle are respectively connected to the main air inlet pipeline; and

a control device for controlling the temperature of the supply source bottle and the recovery source bottle,

when the main gas inlet pipeline is opened, carrier gas carries a first precursor and is introduced into the reaction chamber through the main gas inlet pipeline, the supply source bottle provides the first precursor,

when the main air inlet pipeline is closed, the supply source bottle is communicated with the recovery source bottle through a recovery pipeline, the recovery source bottle condenses and recovers the first precursor provided by the supply source bottle,

wherein the control device enables the supply source bottle and the recovery source bottle to be functionally interchanged by setting the temperatures of the supply source bottle and the recovery source bottle when the content of the first precursor in the supply source bottle is lower than a set threshold value.

2. The atomic layer deposition apparatus according to claim 1,

the supply source bottle is connected with the main air inlet pipeline through a first transmission pipeline, the recovery source bottle is connected with the main air inlet pipeline through a second transmission pipeline,

the opening and closing of the first transmission pipeline, the second transmission pipeline and the main air inlet pipeline are respectively controlled by a first valve, a second valve, a third valve and a third valve.

3. The atomic layer deposition apparatus according to claim 1, wherein the control device comprises:

a first temperature module to control a temperature of the supply bottle such that the first precursor is in a gaseous state in the supply bottle; and

and the second temperature module is used for controlling the temperature of the recovery source bottle so that the first precursor is in a liquid state or a solid state in the recovery source bottle.

4. The atomic layer deposition apparatus according to claim 3, wherein the control device further comprises:

and the third temperature module is used for controlling the temperature of the main air inlet pipeline, the first transmission pipeline and the second transmission pipeline so that the substances transmitted by the main air inlet pipeline, the first transmission pipeline and the second transmission pipeline are in a gaseous state.

5. The atomic layer deposition apparatus according to claim 1, further comprising:

the system comprises a vacuum pump and a main exhaust pipeline communicated with the vacuum pump; and

a first exhaust pipe connected between the recovery source bottle and the vacuum pump,

when the main air inlet pipeline is closed, the recovery source bottle releases the carrier gas through the first exhaust pipeline and the main exhaust pipeline.

6. The atomic layer deposition apparatus according to claim 1, further comprising:

a third transfer conduit through which purge gas enters and purges the reaction chamber.

7. The atomic layer deposition apparatus according to claim 5, further comprising:

and a fourth transmission pipeline, through which a second precursor enters the reaction chamber, wherein the second precursor is used for reacting with the first precursor to generate a thin film.

8. The atomic layer deposition apparatus according to claim 7, further comprising:

and when the fourth conveying pipeline is closed, the second precursor enters the vacuum pump through the second exhaust pipeline.

9. The atomic layer deposition apparatus according to claim 1, wherein the first precursor is a metal precursor.