KR20060029554A - A method for depositing thin film using ald - Google Patents

Abstract

The present invention relates to an ALD multi-layer thin film deposition method, in order to deposit a thin film made of a ternary material on a substrate, a substrate (on the wafer block 20 in the reaction vessel 10 into which different kinds of source gases are introduced) and a thin film deposition step S2 for depositing a thin film by spraying a first source gas, a second source gas, and a third source gas on the substrate w, and depositing w). The thin film deposition step S2 may include: a first feeding step S2-1 feeding the first source gas and the second source gas into the reaction vessel 10 and spraying the same onto the substrate w; A first purge step (S2-2) of introducing the purge gas into the reaction vessel 10 to purge the first and second source gases that are not adsorbed onto the substrate w; A second feeding step (S2-3) of feeding the third source gas into the reaction vessel 10 to react with the first and second source gases adsorbed on the substrate w; A second purge step (S2-4) for purging the third source gas and the reaction by-product not reacted with the first and second source gases by introducing the purge gas into the reaction vessel 10; It is characterized by repeating more than once.

Description

ALD multi-layer thin film deposition method {a method for depositing thin film using ALD}

1 is a view schematically showing an embodiment of a thin film deposition apparatus for performing a first embodiment of the ALD multi-layer thin film deposition method according to the present invention,

FIG. 2 is a view schematically showing another embodiment of a thin film deposition apparatus for performing the first embodiment of the ALD multi-layer thin film deposition method of FIG.

3 is a graph showing a process sequence of a first embodiment of the ALD multi-layer thin film deposition method of FIGS. 1 and 2;

Figure 4 schematically shows an embodiment of a thin film deposition apparatus for performing a second embodiment of the ALD multi-layer thin film deposition method according to the present invention,

FIG. 5 schematically illustrates another embodiment of a thin film deposition apparatus that performs a second embodiment of the ALD multi-layer thin film deposition method of FIG. 4;

6 is a schematic view showing a thin film deposition apparatus for performing a third embodiment of the ALD multi-layer thin film deposition method according to the present invention.

<Description of Signs of Major Parts of Drawings>

10 ... reaction vessel

20 ... Wafer Block

30 ... pump

The present invention relates to an ALD multi-layer thin film deposition method capable of depositing a multi-layered thin film using an ALD (Atomic Layer Deposition) method.

Currently, most materials used in DRAM, FRAM, and PRAM are mostly binary materials having AxBy composition, such as SiO2, Al2O3, TiN, etc., and these binary materials are used by CVD (Chemical Vapor Deposition) method or sputter method. Being deposited on a substrate.

However, as the degree of integration of the device is increased and the electrical characteristics are required to be improved, the characteristics of binary materials having AxBy compositions are limited. Attempts have been made to form thin films with quaternary materials having the composition of AwBxCyDz, such as PbwZrxTiyOz and BrwSrxTiyO3. However, when a ternary or quaternary material is used, it is very difficult to form a thin film of a desired composition, and is mainly deposited on a substrate by a sputtering method.

The sputtering method is a method of applying a plasma to a target made of a ternary or quaternary material having a predetermined composition so that molecules are protruded from the target so that the molecules are stacked on a substrate. Although the sputtering method has an advantage of obtaining a thin film having a predetermined composition, it is difficult to apply to actual semiconductor device fabrication due to poor step coverage in manufacturing a highly integrated semiconductor device of 100 nm or less.

The CVD method is a method of depositing a thin film on a substrate by simultaneously coexisting a plurality of source gases in the reaction vessel and vapor-phase reaction in the reaction vessel. However, even with such a CVD method, the step coverage is disadvantageous when the step is increased on the substrate, and the composition is formed differently according to the step inside the substrate, and contaminants are easily generated. have.

The present invention has been made to solve the above problems, it is possible to easily deposit a plural-based thin film consisting of a ternary material or a ternary material on a substrate, constant composition and excellent step coverage ALD multi-layer thin film deposition method The purpose is to provide.

In order to achieve the above object, the first embodiment of the ALD multi-layer thin film deposition method according to the present invention, in order to deposit a thin film made of a ternary material on a substrate, a reaction vessel into which different types of source gas flows Substrate mounting step (S1) for mounting the substrate w on the wafer block 20 in the (10), and by spraying a first source gas, a second source gas and a third source gas on the substrate (w) Including a thin film deposition step (S2) for depositing a thin film,

The thin film deposition step (S2) may include: a first feeding step (S2-1) of simultaneously feeding the first source gas and the second source gas into the reaction vessel (10) and spraying them onto the substrate (w); A first purge step (S2-2) of introducing a purge gas into the reaction vessel (10) to purge the first and second source gases that are not adsorbed on the substrate (w); A second feeding step (S2-3) of feeding a third source gas into the reaction vessel (10) to react with the first and second source gases adsorbed on the substrate (w); A second purge step (S2-4) of purging the third source gas and the reaction by-products which do not react with the first and second source gases by introducing a purge gas into the reaction vessel 10; It is characterized by repeating at least one or more times.

In order to achieve the above object, the second embodiment of the ALD multi-layer thin film deposition method according to the present invention, in order to deposit a thin film consisting of a quaternary material on the substrate, a reaction vessel into which different kinds of source gas flows Substrate mounting step (S1) for mounting the substrate (w) on the wafer block 20 in the (10), and the first source gas, second source gas, third source gas and fourth on the substrate (w) Injecting a source gas on the substrate (w) comprises a thin film deposition step (S2 ') for depositing a thin film, the thin film deposition step (S2'),

A first feeding step (S2 ′-1) of simultaneously feeding the first source gas, the second source gas, and the third source gas into the reaction vessel (10) and injecting onto the substrate (w); A first purge step (S2 ′-2) of purging the first, second and third source gases which are not adsorbed on the substrate (w) by introducing a purge gas into the reaction vessel (10); A second feeding step (S2′-3) of feeding a fourth source gas into the reaction vessel (10) to react with the first, second and third source gases adsorbed on the substrate (w); A second purge step (S2 ′-4) of purging the fourth source gas and the reaction by-product not reacted with the first, second and third source gases by introducing the purge gas into the reaction vessel 10. The ALD cycle is repeated at least once.

In order to achieve the above object, a third embodiment of the ALD multi-layer thin film deposition method according to the present invention, in order to deposit a thin film made of a quaternary material on a substrate, a reaction vessel into which a different type of source gas is introduced Substrate mounting step (S1) for mounting the substrate (w) on the wafer block 20 in the (10), and the first source gas, second source gas, third source gas and fourth on the substrate (w) Injecting a source gas on the substrate (w) comprises a thin film deposition step (S2 ") for depositing a thin film, the thin film deposition step (S2"),

A first feeding step (S2 ″-1) of feeding two source gases of the first source gas, the second source gas, and the third source gas into the reaction vessel 10 and spraying them onto the substrate w; A first purge step (S2 "-2) of introducing gas into the reaction vessel (10) to purge two source gases of the first, second and third source gases which are not adsorbed on the substrate (w); A second feeding step (S2 ″ -3) of feeding the remaining source gas of the first source gas, the second source gas, and the third source gas into the reaction vessel (10) and spraying it onto the substrate (w); A second purge step (S2 ″ -4) in which a purge gas is introduced into the reaction vessel 10 to purge the remaining source gas among the first, second and third source gases that are not adsorbed on the substrate w; ; A third feeding step (S2 ″ -5) of feeding a fourth source gas into the reaction vessel 10 to react with the first, second and third source gases adsorbed on the substrate w; A third purge step (S2 ″ -6) which flows into the reaction vessel 10 to purge the fourth source gas and the reaction by-product not reacted with the first, second, and third source gases (S2 ″ -6); It is characterized by repeating one or more times.

Hereinafter, ALD multi-layer thin film deposition method according to the present invention will be described in detail with reference to the accompanying drawings.

1 is a view schematically showing an embodiment of a thin film deposition apparatus for performing a first embodiment of the ALD multi-layer thin film deposition method according to the present invention, Figure 2 is a first embodiment of the ALD multi-layer thin film deposition method of FIG. FIG. 3 is a view schematically showing another embodiment of a thin film deposition apparatus for carrying out one embodiment, and FIG. 3 is a graph showing a process sequence of the first embodiment of the ALD multi-layer thin film deposition method of FIGS. 1 and 2. .

Referring to the drawings, the first embodiment of the ALD multi-layer thin film deposition method according to the present invention is for depositing a thin film made of a ternary material on the substrate (w), a reaction vessel into which different types of source gas flows Substrate mounting step (S1) for mounting the substrate (w) on the wafer block 20 in the (10), the first source gas, the second source gas and the third source gas is sprayed on the substrate (w) thin film It comprises a thin film deposition step (S2) for depositing.

Substrate seating step (S1) is made by the robot arm (not shown) to take out the substrate (w) from the transfer module (not shown) to flow into the reaction vessel 10 and then seated on the wafer block 20. In this step, the wafer block 20 preheats the substrate w to an appropriate temperature.

In the thin film deposition step S2, a first feeding step S2- of simultaneously feeding the first source gas source 2 and the second source gas source 2 into the reaction vessel 10 and injecting onto the substrate w is performed. 1) and a first purge step (S2-2) of purging the first and second source gases which are not adsorbed on the substrate w by introducing the purge gas into the reaction vessel 10. A second feeding step (S2-3) of feeding the third source gas into the reaction vessel 10 to react with the first and second source gases adsorbed on the substrate w, and purging gas from the reaction vessel 10. ALD cycle comprising a second purge step (S2-4) for purging the third source gas and the reaction by-products that do not react with the first and second source gas by injecting to and is carried out at least once. Here, the first source gas and the second source gas do not react with each other.

The first feeding step (S2-1) can be divided into two ways. The first feeding step (S2-1) reduces the temperature of the substrate to approximately 200 °. ~ 700 ?? It is carried out in the state maintained in the range of. The pressure in the reaction vessel is maintained at 0.1 to 10 torr.

In the first method, as shown in FIG. 1, the first source gas and the second source gas are fed into the reaction vessel 10 via the first feeding line 11 and the second feeding line 12, respectively. That's the way it is.

In the second method, as shown in FIG. 2, the first source gas and the second source gas are passed through the first feeding line 11 and the second feeding line 12, respectively, and then mixed in the mixing feeding line 112. After feeding to the reaction vessel (10).

 The first source gas and the second source gas fed to the reaction vessel 10 through the first method or the second method are adsorbed evenly mixed on the substrate w.

In the first purge step S2-2, the simultaneous feeding of the first and second source gases is stopped and the remaining first and second source gases that are not adsorbed to the substrate w after being already introduced into the reaction vessel 10 are removed. 1, purge from the reaction vessel 10 by purge gas 15 or 16 as shown in FIG. 1, or purge gas fed through the integrated purge line 115 as shown in FIG. 2. ) Step. The purged first and second source gases are exhausted to the exhaust device through the pump 30.

In the second feeding step S2-3, the third source gas is injected onto the substrate w by being fed into the reaction vessel 10 via the third feeding line 13. Through the second feeding step S2-3, the first and second source gases adsorbed on the substrate w react with the third source gas to form a predetermined ternary thin film on the substrate w. . That is, the AxByCz thin film is formed on the substrate w.

In the second purge step S2-4, the third source gas and the reaction by-product not used to form the thin film by the purge gas fed through the independent purge line 17 are purged from the reaction vessel 10. to be. The purged third source gas and reaction by-products are exhausted to the exhaust device through the pump 30.

The first feeding step (S2-1), the first purge step (S2-2), the second feeding step (S2-3), and the second purge step (S2-4) are sequential ALD cycles. The thin film of the required thickness is deposited by repeating it more than once.

If the thin film to be formed has the composition AxByCz, the first source gas is a material A, the second source gas is a material B, the third source gas is a material C, and the first feeding step (S2- In 1) the source gas is fed in the form of AB, BC, AC, the remaining source gas is fed in the second feeding step (S2-2).

Next, a second embodiment of the ALD multi-layer thin film deposition method according to the present invention will be described.

4 is a view schematically showing an embodiment of a thin film deposition apparatus for performing a second embodiment of the ALD multi-layer thin film deposition method according to the present invention, Figure 5 is a first embodiment of the ALD multi-layer thin film deposition method of FIG. 2 is a view schematically showing another embodiment of a thin film deposition apparatus for performing the second embodiment. Here, the same reference numerals as in the first embodiment are the same members having the same functions.

Referring to the drawings, a second embodiment of the ALD multi-layer thin film deposition method according to the present invention is for depositing a thin film made of a quaternary material on the substrate (w), a reaction vessel into which different kinds of source gases flow Substrate mounting step S1 for seating the substrate w on the wafer block 20 in (10), and the first source gas, the second source gas, the third source gas and the fourth source on the substrate (w) And a thin film deposition step (S2) of depositing a thin film by spraying a gas.

Substrate seating step (S1) is made by the robot arm (not shown) to take out the substrate (w) from the transfer module (not shown) to flow into the reaction vessel 10 and then seated on the wafer block 20. In this step, the wafer block 20 preheats the substrate w to an appropriate temperature.

In the thin film deposition step S2, the first source gas source 1, the second source gas source 2, and the third source gas source 3 are simultaneously fed into the reaction vessel 10 and onto the substrate w. A first purge step of spraying the first feeding step (S2'-1) and the purge gas flowing into the reaction vessel 10 to purge the first, second, third source gas that is not adsorbed on the substrate (w) With (S2'-2). A second feeding step (S2 ′ -3) of feeding the fourth source gas into the reaction vessel 10 to react with the first, second and third source gases adsorbed on the substrate w and the purge gas; Repeating the ALD cycle including the second purge step (S2'-4) which flows into (10) to purge the fourth source gas and the reaction by-product not reacted with the first, second, and third source gases. Is performed. Here, the first source gas, the second source gas and the third source gas do not react with each other.

The first feeding step S2'-1 may be divided into two types. The first feeding step S2'-1 may increase the temperature of the substrate at 200 ° C. ~ 700 ?? It is carried out in the state maintained in the range of. The pressure in the reaction vessel is maintained at 0.1 to 10 torr.

In the first method, as shown in FIG. 4, the first, second and third source gases are respectively introduced into the reaction vessel 10 via the first, second and third feeding lines 11, 12 and 13, respectively. To be fed as

In the second method, as shown in FIG. 5, the first, second and third source gases are mixed in the mixed feeding line 113 while passing through the first, second and third feeding lines 11, 12 and 13, respectively. After the feed to the reaction vessel (10).

 The first, second and third source gases fed to the reaction vessel 10 through the first or second method are adsorbed in a uniformly mixed state on the substrate w.

The first purge step (S2 ′-2) stops simultaneous feeding of the first, second and third source gases and has already flowed into the reaction vessel 10 before the remaining first and second adsorptions are not adsorbed onto the substrate w. The three source gases are reacted by independent purge lines 15, 16 and 17 as shown in FIG. 4 or by purge gas fed through the integrated purge line 116 as shown in FIG. Purge from the vessel (10). The purged first, second and third source gases are exhausted through the pump 30 to the exhaust device.

The second feeding step S2 ′ -3 is a step of spraying the fourth source gas onto the substrate w by being fed into the reaction vessel 10 via the fourth feeding line 14. Through the second feeding step S2 ′ -3, the first, second, and third source gases adsorbed on the substrate w react with the fourth source gas to react with each other to form a predetermined ternary thin film on the substrate w. Is formed. That is, the AwBxCyDz thin film is formed on the substrate w.

The second purge step S2 ′ -4 purges, from the reaction vessel 10, the third source gas and the reaction by-product not used to form the thin film by the purge gas fed through the independent purge line 18. Step. The purged fourth source gas and the reaction by-products are exhausted to the exhaust device through the pump 30.

The first feeding step S2'-1, the first purging step S2'-2, the second feeding step S2'-3, and the second purging step S2'-4 are sequential ALD cycles. This is repeated at least one or more times to deposit a thin film of the required thickness.

If the thin film to be formed has a composition of AwBxCyDz, the first source gas is a material A, the second source gas is a material B, the third source gas is a material C, and the fourth source gas is a D material. It becomes a substance.

Next, a third embodiment of the ALD multi-layer thin film deposition method according to the present invention will be described.

6 is a schematic view showing a thin film deposition apparatus for performing a third embodiment of the ALD multi-layer thin film deposition method according to the present invention. Here, the same reference numerals as in the first and second embodiments are the same members having the same functions.

As shown, the third embodiment of the ALD multi-layer thin film deposition method according to the present invention, for depositing a thin film made of a quaternary material on the substrate (w), a reaction vessel into which different types of source gas flows Substrate mounting step S1 for seating the substrate w on the wafer block 20 in (10), and the first source gas, the second source gas, the third source gas and the fourth source on the substrate (w) And depositing a thin film by spraying a gas (S2 ″).

Substrate seating step (S1) is made by the robot arm (not shown) to take out the substrate (w) from the transfer module (not shown) to flow into the reaction vessel 10 and then seated on the wafer block 20. In this step, the wafer block 20 preheats the substrate w to an appropriate temperature.

In the thin film deposition step S2 ″, two source gases of the first source gas source 1, the second source gas source 2, and the third source gas source 3 are simultaneously fed into the reaction vessel 10 to form a substrate. Two of the first feeding step S2 " -1 spraying onto (w) and the first, second and third source gases which are not adsorbed onto the substrate w by introducing the purge gas into the reaction vessel 10. The first purge step (S2 ″ -2) for purging the source gas, and the other source gas of the first source gas, the second source gas, and the third source gas are fed into the reaction vessel 10 and placed on the substrate w. The second feeding step (S2 "-3) and the purge gas is injected into the reaction vessel 10 to spray the remaining source gas of the first, second, third source gas that is not adsorbed on the substrate (w) The second purge step (S2 ″ -4) to purge, and the fourth source gas (source 4) is fed into the reaction vessel 10 to react with the first, second, third source gas adsorbed on the substrate (w) The third feeding step (S3 "-5) and the purge gas At least one ALD cycle including a third purge step (S2 "-6) which flows into the application device 10 to purge the fourth source gas and the reaction by-products which have not reacted with the first, second, and third source gases. In this case, the first source gas, the second source gas, and the third source gas do not react with each other, or at least two of the first source gas, the second source gas, and the third source gas are simultaneously introduced. Source gases should not react with each other.

In this embodiment, as illustrated in FIG. 6, the first and second source gases are simultaneously fed and the third and fourth source gases are independently fed. However, it is, of course, possible to simultaneously feed the second and third source gases, the third and fourth source gases, the first and the fourth source gases and the other two kinds of gases independently.

The first feeding step (S2 "-1) is carried out while maintaining the temperature of the substrate in the range of 200 ~ 700 ~, the pressure in the reaction vessel to 0.1 ~ 10torr, the first, second source The gas is fed through the first and second feeding lines 11 and 12 and then mixed in the mixing feeding line 112 and then fed to the reaction vessel 10. Through the first feeding step S2-1. The first and second source gases fed into the reaction vessel 10 are adsorbed evenly mixed on the substrate w.

In this case, the two source gases of the first source gas, the second source gas and the third source gas may be mixed in the mixing feeding line 112 outside the reaction vessel 10 and then fed into the reaction vessel 10. Of course.

The first purge step (S2 ″-2) stops simultaneous feeding of the first and second source gases and has already flowed into the reaction vessel 10, and then the remaining first and second source gases which are not adsorbed onto the substrate w. The purge gas is purged from the reaction vessel 10 by the purge gas fed through the integrated purge line 116. The purged first and second source gases are exhausted through the pump 30 to the exhaust device.

The second feeding step S2 "-3 is a step of feeding the third source gas into the reaction vessel 10 through the third feeding line 13, and the substrate (2) through the second feeding step S2" -3. The third source gas is uniformly mixed with the first and second source gases adsorbed on w).

The second purge step S2 ″ -4 stops simultaneous feeding of the third source gas and independently purges the remaining third source gas that has not been adsorbed to the substrate w after it has already flowed into the reaction vessel 10. Purging from the reaction vessel 10 by the purge gas fed through the 17. The purged third source gas is exhausted to the exhaust apparatus through the pump 30.

The third feeding step S2 ″ -5 is a step of spraying the fourth source gas onto the substrate w by feeding the fourth source gas into the reaction vessel 10 via the fourth feeding line 14. Through the feeding step S2 ″ -5, the first, second, and third source gases adsorbed on the substrate w react with the fourth source gas to form a predetermined quaternary thin film on the substrate w. do. That is, the AwBxCyDz thin film is formed on the substrate w.

The third purge step (S2 ″ -6) purges the fourth source gas and the reaction by-product not used in the thin film formation from the reaction vessel 10 by the purge gas fed through the independent purge line 18. The purged fourth source gas and the reaction by-products are exhausted through the pump 30 to the exhaust device.

The first feeding step S2 "-1, the first purge step S2" -2, the second feeding step S2 "-3, the second purging step S2" -4, and the third feeding step (S2 " -5) and the third purge step (S2 " -6) are sequential ALD cycles, which deposit a thin film of a required thickness by repeating at least one or more times.

If the thin film to be formed has a composition of AwBxCyDz, the first source gas is a material A, the second source gas is a material B, and the third source gas is a material C. At this time, the source gas in the first feeding step (S2 "-1) is fed in the form of AB, BC, CD, AD, in the second feeding step (S2" -4) and the third feeding step (S2 "-6) The remaining source gases are each fed.

Although the present invention has been described with reference to one embodiment shown in the drawings, this is merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom.

As described above, according to the ALD multi-layer thin film deposition method according to the present invention, it is possible to easily deposit a thin film made of a ternary material or a quaternary material on the substrate, the composition of the thin film to be deposited Can be. In addition, there is an effect that it is possible to maintain excellent step coverage even when the step is large on the substrate.

Claims (10)

In order to deposit a thin film of ternary material on a substrate, Substrate mounting step (S1) for seating the substrate (w) on the wafer block 20 in the reaction vessel (10) in which different kinds of source gas flows, and the first source gas and the second on the substrate (w) A thin film deposition step (S2) of depositing a thin film by injecting a source gas and a third source gas, The thin film deposition step (S2), A first feeding step (S2-1) of simultaneously feeding the first source gas and the second source gas into the reaction vessel (10) and injecting onto the substrate (w); A first purge step (S2-2) of introducing a purge gas into the reaction vessel (10) to purge the first and second source gases that are not adsorbed on the substrate (w); A second feeding step (S2-3) of feeding a third source gas into the reaction vessel (10) to react with the first and second source gases adsorbed on the substrate (w); An ALD cycle comprising: a second purge step (S2-4) of purging the third source gas and the reaction by-product which do not react with the first and second source gases by introducing the purge gas into the reaction vessel 10. ALD multi-layer thin film deposition method characterized in that for repeating at least one or more times. The method of claim 1, And the first source gas and the second source gas do not react with each other. The method of claim 1, wherein the first source gas and the second source gas is mixed in the mixing feed line 112 outside the reaction vessel 10, the ALD plural, characterized in that the feed to the reaction vessel (10) Thin film deposition method. In order to deposit a thin film of quaternary material on a substrate, Substrate mounting step (S1) for seating the substrate (w) on the wafer block 20 in the reaction vessel (10) in which different kinds of source gas flows, and the first source gas and the second on the substrate (w) A thin film deposition step (S2 ′) of depositing a thin film by spraying a source gas, a third source gas, and a fourth source gas on the substrate w, The thin film deposition step (S2 '), A first feeding step (S2 ′-1) of simultaneously feeding the first source gas, the second source gas, and the third source gas into the reaction vessel (10) and injecting onto the substrate (w); A first purge step (S2 ′-2) of purging the first, second and third source gases which are not adsorbed on the substrate (w) by introducing a purge gas into the reaction vessel (10); A second feeding step (S2′-3) of feeding a fourth source gas into the reaction vessel (10) to react with the first, second and third source gases adsorbed on the substrate (w); A second purge step (S2 ′-4) of purging the fourth source gas and the reaction by-product not reacted with the first, second and third source gases by introducing the purge gas into the reaction vessel 10. ALD multi-layer thin film deposition method characterized by repeating the ALD cycle at least one or more times. The method of claim 4, wherein And the first source gas, the second source gas, and the third source gas do not react with each other. 5. The method of claim 4, wherein the first source gas, the second source gas, and the third source gas are mixed in the mixing feeding line 113 outside the reaction container 10 and then fed to the reaction container 10. ALD multi-layer thin film deposition method characterized in that. In order to deposit a thin film of quaternary material on a substrate, Substrate mounting step (S1) for seating the substrate (w) on the wafer block 20 in the reaction vessel (10) in which different kinds of source gas flows, and the first source gas and the second on the substrate (w) A thin film deposition step (S2 ″) of depositing a thin film by spraying a source gas, a third source gas and a fourth source gas on the substrate w, The thin film deposition step (S2 "), A first feeding step (S2 ″ -1) of feeding two source gases of the first source gas, the second source gas, and the third source gas into the reaction container (10) and spraying them onto the substrate (w); A first purge step (S2 ″ -2) of purging two source gases of the first, second and third source gases which are not adsorbed on the substrate (w) by introducing a purge gas into the reaction vessel (10); A second feeding step (S2 ″ -3) of feeding the remaining source gas of the first source gas, the second source gas, and the third source gas into the reaction vessel (10) and spraying it onto the substrate (w); A second purge step (S2 ″ -4) in which a purge gas is introduced into the reaction vessel 10 to purge the remaining source gas among the first, second and third source gases that are not adsorbed on the substrate w; ; A third feeding step (S2 ″ -5) of feeding a fourth source gas into the reaction vessel 10 to react with the first, second and third source gases adsorbed on the substrate (w); And a third purge step (S2 ″ -6) for purging the fourth source gas and the reaction by-product not reacted with the first, second and third source gases by introducing the purge gas into the reaction vessel 10. ALD multi-layer thin film deposition method characterized by repeating the ALD cycle at least one or more times. The method of claim 7, wherein And the first source gas, the second source gas, and the third source gas do not react with each other. The method of claim 7, wherein The first source gas and the second source gas is ALD multi-layer thin film deposition method characterized in that the mixture is fed in the reaction vessel (10) after mixing in the mixing feed line (112) outside the reaction vessel (10). The method of claim 7, wherein ALD multi-layer thin film deposition method characterized in that the two source gas flowing in the first source gas, the second source gas and the third source gas at the same time does not react with each other.

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