CN111996511A - Chemical vapor deposition device and deposition method of tungsten nitride film - Google Patents

Chemical vapor deposition device and deposition method of tungsten nitride film Download PDF

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Publication number
CN111996511A
CN111996511A CN202010797257.XA CN202010797257A CN111996511A CN 111996511 A CN111996511 A CN 111996511A CN 202010797257 A CN202010797257 A CN 202010797257A CN 111996511 A CN111996511 A CN 111996511A
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precursor
gap
gas
support structure
substrate
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熊少游
程磊
谭力
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Yangtze Memory Technologies Co Ltd
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Yangtze Memory Technologies Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles

Abstract

The embodiment of the invention discloses a chemical vapor deposition device and a deposition method of a tungsten nitride film, wherein the chemical vapor deposition device comprises: the reaction chamber, the supporting structure, the gas spraying part and the gas compensation part are arranged in the reaction chamber; the support structure is arranged in the reaction chamber; the upper surface of the support structure is used for supporting a substrate needing to be deposited with a film; the gas spraying part is arranged at the upper part of the reaction chamber and is opposite to the upper surface of the supporting structure so as to spray a first precursor and a second precursor to the surface of a substrate supported by the supporting structure; the gas compensation part is arranged at the lower part of the reaction chamber; the gas compensation component supplies a first precursor from below the support structure towards an edge of the support structure.

Description

Chemical vapor deposition device and deposition method of tungsten nitride film
Technical Field
The invention relates to the technical field of semiconductors, in particular to a chemical vapor deposition device and a deposition method of a tungsten nitride film.
Background
The thin film deposition process is a very important link in the semiconductor process, and determines the growth quality of each film structure in the final product. As one of the commonly used thin film deposition processes, Chemical Vapor Deposition (CVD) is a process of forming a thin film on a target substrate such as a semiconductor wafer by a chemical reaction; in the specific process, a precursor gas is injected into a reaction chamber of a chemical vapor deposition device under the conditions of high temperature and high pressure, and a compound film is grown through chemical reaction.
In a memory device, a word line (WL, or "gate") or a Bit Line (BL) is typically formed using a conductive material, such as tungsten (W), tungsten nitride (WN), or other conductive materials. In depositing tungsten nitride films, it is generally desirable to provide two nitrogen-containing and tungsten-containing precursors, the nitrogen-containing precursor being, for example, ammonia (NH)3) Tungsten containing precursors such as tungsten hexafluoride (WF)6). During deposition, the uniformity of the precursor supply directly affects the uniformity of the final film.
Disclosure of Invention
In view of the above, embodiments of the present invention provide a chemical vapor deposition apparatus and a method for depositing a tungsten nitride film to solve at least one problem in the related art.
In order to achieve the purpose, the technical scheme of the invention is realized as follows:
an embodiment of the present invention provides a chemical vapor deposition apparatus, including: the reaction chamber, the supporting structure, the gas spraying part and the gas compensation part are arranged in the reaction chamber; wherein the content of the first and second substances,
the support structure is arranged in the reaction chamber; the upper surface of the support structure is used for supporting a substrate needing to be deposited with a film;
the gas spraying part is arranged at the upper part of the reaction chamber and is opposite to the upper surface of the supporting structure so as to spray a first precursor and a second precursor to the surface of a substrate supported by the supporting structure;
the gas compensation part is arranged at the lower part of the reaction chamber; the gas compensation component supplies a first precursor from below the support structure towards an edge of the support structure.
In the above scheme, the first precursor is ammonia gas; the second precursor is tungsten hexafluoride gas.
In the above scheme, the method further comprises: an annular structure;
the annular structure is positioned at the edge of the support structure, a first gap is formed between the annular structure and the side surface of the support structure, a second gap is formed between the annular structure and the upper surface of the support structure, and the first gap is communicated with the second gap;
the outlet of the gas compensation part is communicated with the first gap.
In the above solution, a third gap is formed between the annular structure and the lower surface of the support structure, and the third gap is communicated with the first gap;
the outlet of the gas compensation part is communicated with the first gap through the third gap.
In the above-mentioned scheme, the first step of the method,
the gas compensation component is also used to supply a passivation gas.
The embodiment of the invention also provides a deposition method of the tungsten nitride film, which comprises the following steps:
putting a substrate needing to be deposited with a tungsten nitride film into a reaction chamber of a chemical vapor deposition device;
spraying a first precursor and a second precursor from an upper portion of the reaction chamber toward an upper surface of the substrate through a gas spraying part of the chemical vapor deposition apparatus;
supplying a first precursor from below the substrate toward an edge of the substrate through a gas compensation component of the chemical vapor deposition apparatus;
the first precursor is ammonia gas; the second precursor is tungsten hexafluoride gas.
In the above scheme, the chemical vapor deposition apparatus further includes: a support structure and an annular structure; the upper surface of the support structure is used for supporting the substrate; the annular structure is positioned at the edge of the support structure, a first gap is formed between the annular structure and the side surface of the support structure, a second gap is formed between the annular structure and the upper surface of the support structure, and the first gap is communicated with the second gap;
the supplying a first precursor from below the substrate toward an edge of the substrate by a gas compensation component of the chemical vapor deposition apparatus, comprising: supplying a first precursor to the first aperture through the gas compensation member, the first precursor flowing along the first aperture to the second aperture to supply the first precursor to an upper surface edge of the substrate.
In the above solution, a third gap is formed between the annular structure and the lower surface of the support structure, and the third gap is communicated with the first gap;
the supplying a first precursor from below the substrate toward an edge of the substrate by a gas compensation component of the chemical vapor deposition apparatus, comprising: supplying a first precursor to the third gap through the gas compensation member, the first precursor flowing along the third gap, the first gap to the second gap to supply the first precursor to an upper surface edge of the substrate.
In the above scheme, the method further comprises: supplying a passivating gas through the gas compensating part of the chemical vapor deposition apparatus.
The chemical vapor deposition device and the deposition method of the tungsten nitride film provided by the embodiment of the invention are characterized in that the chemical vapor deposition device comprises: the reaction chamber, the supporting structure, the gas spraying part and the gas compensation part are arranged in the reaction chamber; the support structure is arranged in the reaction chamber; the upper surface of the support structure is used for supporting a substrate needing to be deposited with a film; the gas spraying part is arranged at the upper part of the reaction chamber and is opposite to the upper surface of the supporting structure so as to spray a first precursor and a second precursor to the surface of a substrate supported by the supporting structure; the gas compensation part is arranged at the lower part of the reaction chamber; the gas compensation component supplies a first precursor from below the support structure towards an edge of the support structure. Therefore, the gas compensation part increases the supply compensation of the first precursor at the edge of the substrate, and improves the supply concentration of the first precursor at the edge of the substrate, so that the distribution of the first precursor on the surface of the substrate is more uniform, and the uniformity of film deposition is improved.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
FIG. 1 is a schematic cross-sectional view of a related art chemical vapor deposition apparatus;
FIG. 2 is a schematic cross-sectional view of a chemical vapor deposition apparatus according to an embodiment of the present invention;
FIGS. 3a and 3b are schematic partial cross-sectional views of the CVD apparatus according to some embodiments;
fig. 4 is a schematic flow chart illustrating a deposition method of a tungsten nitride film according to an embodiment of the present invention.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the invention are shown in the drawings, it should be understood that the invention may be embodied in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the present invention; that is, not all features of an actual embodiment are described herein, and well-known functions and structures are not described in detail.
In the drawings, the size of layers, regions, elements, and relative sizes may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
It will be understood that when an element or layer is referred to as being "on" … …, "adjacent to … …," "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on … …," "directly adjacent to … …," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention. And the discussion of a second element, component, region, layer or section does not necessarily imply that a first element, component, region, layer or section is present in the invention.
Spatial relationship terms such as "under … …", "under … …", "below", "under … …", "above … …", "above", and the like, may be used herein for ease of description to describe the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "below … …" and "below … …" can encompass both an orientation of up and down. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In the following description, for the purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The following detailed description of the preferred embodiments of the invention, however, the invention is capable of other embodiments in addition to those detailed.
FIG. 1 is a schematic cross-sectional view of a related art chemical vapor deposition apparatus.
As shown, the chemical vapor deposition apparatus includes: a reaction chamber 110, a support structure 120, and a gas spraying part 130. Wherein, the support structure 120 may also be referred to as a Pedestal (pendal), a carrying component, a wafer stage, etc., and the support structure 120 is disposed in the reaction chamber 110, and the upper surface thereof is used for supporting a substrate to be deposited with a thin film (e.g., a wafer to be deposited with a tungsten nitride thin film). A gas spraying part 130, which may also be called a shower head, is located at an upper portion of the reaction chamber 110 and is disposed opposite to the upper surface of the support structure 120. The gas spraying part 130 sprays a precursor to the substrate in order to form a thin film on the surface of the substrate by a chemical reaction, for example, two precursors including nitrogen and tungsten, a nitrogen-containing precursor such as ammonia (NH), are generally sprayed in order to form a tungsten nitride thin film3) Tungsten containing precursors such as tungsten hexafluoride (WF)6). But inIn the actual process, the condition that the concentration of the precursor sprayed on the edge of the substrate is low or the sprayed precursor is not easy to flow to the edge of the substrate often occurs, so that the precursor is unevenly distributed on the surface of the substrate, and the uniformity of the deposited film is poor.
For example, during deposition of a tungsten nitride film, WF6Gas diffusivity is good, but NH3Is generally poor. NH is shown generally by the arrows in FIG. 13Flow direction at the edge position of the substrate, wherein, at the position indicated by the dashed oval, NH3The concentration of (2) is reduced and the distribution is less. Eventually resulting in non-uniform deposition of the tungsten nitride film.
It should be noted that only a partial structure at the edges of the support structure 120 and the gas spraying part 130 is shown in the drawings, and the entire structure of the support structure 120 and the gas spraying part 130 is not shown.
Based on this, the embodiment of the present invention provides a chemical vapor deposition apparatus, including: the reaction chamber, the supporting structure, the gas spraying part and the gas compensation part are arranged in the reaction chamber; the support structure is arranged in the reaction chamber; the upper surface of the support structure is used for supporting a substrate needing to be deposited with a film; the gas spraying part is arranged at the upper part of the reaction chamber and is opposite to the upper surface of the supporting structure so as to spray a first precursor and a second precursor to the surface of a substrate supported by the supporting structure; the gas compensation part is arranged at the lower part of the reaction chamber; the gas compensation component supplies a first precursor from below the support structure towards an edge of the support structure.
As can be appreciated, the gas compensation component of the embodiment of the invention increases the supply compensation of the first precursor at the edge of the substrate, and increases the supply concentration of the first precursor at the edge of the substrate, so that the distribution of the first precursor on the surface of the substrate is more uniform, and the uniformity of film deposition is improved.
Hereinafter, the chemical vapor deposition apparatus provided by the embodiment of the present invention will be explained in further detail with reference to fig. 2.
As shown in fig. 2, the chemical vapor deposition apparatus 200 includes: a reaction chamber 210, a support structure 220, and a gas spraying part 230 and a gas compensation part 240.
Wherein, the reaction chamber 210 provides a closed space for the chemical vapor deposition reaction.
The support structure 220 disposed in the reaction chamber 210; the upper surface of the support structure 220 is used to support a substrate on which a thin film is to be deposited. In some embodiments, the support structure 220 may also be used to heat the substrate during deposition.
The gas spraying part 230 is disposed at an upper portion of the reaction chamber 210 and opposite to the upper surface of the support structure 220. In order to generate a thin film on the surface of the substrate by a chemical reaction, the gas spraying part 230 generally needs to spray two or more precursors; here, the gas spraying part 230 is used to spray at least the first precursor and the second precursor onto the surface of the substrate for illustration.
It will be appreciated that the upper end of the gas spraying component 230 may include a first precursor input channel and a second precursor input channel; the lower end of the gas spraying part 230, i.e. the end face facing the support structure 220 (towards the substrate), may comprise a first and a second precursor output channel. The first and second precursors do not mix inside the gas spraying part 230.
The gas compensation member 240 is disposed at a lower portion of the reaction chamber 210, and specifically, extends below the support structure 220, for example. The gas compensation component 240 supplies a first precursor from below the support structure 220 towards the edge of the support structure 220. Therefore, the condition that the precursor is only supplied from the front side of the substrate in the related art is changed, the precursor supply pipelines on the back side are increased, and the uniformity of precursor supply is improved.
In one embodiment, the first precursor is ammonia; the second precursor is tungsten hexafluoride gas. Correspondingly, the film to be deposited is a tungsten nitride film; the tungsten nitride film is formed by a chemical reaction between ammonia gas and tungsten hexafluoride.
In this embodiment, the gas compensation component supplies only the first precursor and not the second precursor; i.e. only ammonia gas is supplied and tungsten hexafluoride gas is not supplied. On the one hand, WF6The gas has better diffusivity and can be sufficiently supplied at the edge of the substrate; and NH3Is poor, NH if supplied only through the gas spraying part3Flow only from the front side will result in NH at the edge of the front side of the substrate3Is lower, therefore NH3Edge compensation is more desirable. On the other hand, if the gas compensation member supplies both the first precursor and the second precursor, it is very likely that the first precursor and the second precursor are chemically reacted and deposited at the side surface of the substrate and/or the back surface of the substrate, causing unnecessary film formation and being difficult to remove in a subsequent process.
It should be understood that the chemical vapor deposition apparatus provided by the embodiment of the invention is not limited to be applied to the deposition of tungsten nitride films, and in other deposition processes of films, the precursor may be supplied unevenly, and the edge area of the upper surface of the substrate needs to be compensated; furthermore, a person skilled in the art can determine which precursor needs to be compensated according to the actual distribution of the precursor on the surface of the substrate, so that the first precursor is supplied through the gas compensation component.
In some embodiments, the chemical vapor deposition apparatus further comprises: an annular structure; the annular structure is positioned at the edge of the support structure, a first gap is formed between the annular structure and the side surface of the support structure, a second gap is formed between the annular structure and the upper surface of the support structure, and the first gap is communicated with the second gap; the outlet of the gas compensation part is communicated with the first gap.
In some embodiments, the annular structure has a third gap between the annular structure and the lower surface of the support structure, the third gap being in communication with the first gap; the outlet of the gas compensation part is communicated with the first gap through the third gap.
As shown in fig. 2, a ring structure 250 is located at the edge of the support structure 220, the upper surface of the ring structure 250 is higher than the upper surface of the support structure 220, and the side surface of the ring structure 250 surrounds the side surface of the support structure 220, so that the ring structure 250 receives the edge of the support structure 220 through the inner surface. In practical applications, the ring structure 250 may be a ceramic ring (DoMOER ring). One end of the ring structure 250 is used to press the substrate against the upper surface of the support structure 220; the other end of the ring-shaped structure 250 may rest on a shield to cooperate with the shield to block the gas or plasma from diffusing to the bottom of the reaction chamber.
The outlet of the gas compensation part 240 may communicate with the gap between the ring structure 250 and the support structure 220; thus, the flow path of the gas compensation member 240 supplying the first precursor may refer to the extending direction of the dotted arrow in fig. 2.
FIGS. 3a and 3b are schematic partial structural cross-sectional enlarged views of a CVD apparatus according to some embodiments.
First, please refer to fig. 3 a. The ring-shaped structure 250 'is located at the edge of the support structure 220', a first gap 281 'is formed between the ring-shaped structure 250' and the side surface of the support structure 220', a second gap 282' is formed between the ring-shaped structure 250 'and the upper surface of the support structure 220', and the first gap 281 'is communicated with the second gap 282'; the outlet of the gas compensating part 240 'communicates with the first gap 281'. Thus, the gas compensation member 240' supplies the first precursor to flow from the first gap 281' to the second gap 282' where it contacts the edge of the upper surface of the substrate, and reacts with the second precursor distributed at the edge of the upper surface of the substrate to deposit the second precursor.
Next, please refer to fig. 3 b. The ring structure 250 "and the lower surface of the support structure 220" may also have a third gap 283 "therebetween, said third gap 283" communicating with the first gap 281 "; the outlet of the gas compensating part 240 "communicates with the first gap 281" through the third gap 283 ". Accordingly, the gas compensation member 240 "supplies the first precursor to flow from the third gap 283" to the first gap 281 "and the second gap 282" in sequence, and contacts the edge of the upper surface of the substrate at the second gap 282 "to react with the second precursor distributed at the edge of the upper surface of the substrate for deposition.
In a particular embodiment, the gas compensation component is further configured to supply a passivation gas; such as argon (Ar) supply. Two separate lines may be used for supplying the passivation gas and the first precursor. It should be understood that in an actual apparatus, if a line supplying the passivation gas is already present, a line supplying the first precursor may be additionally provided in the extending direction of the line supplying the passivation gas at a position where the line supplying the passivation gas is provided, thereby forming a first precursor gas compensation; the line supplying the passivation gas is not itself identical to the gas compensation component of the present embodiment (since the first precursor is not supplied).
The embodiment of the invention also provides a deposition method of the tungsten nitride film; refer specifically to FIG. 4. As shown, the method comprises the steps of:
step 401, placing a substrate to be deposited with a tungsten nitride film into a reaction chamber of a chemical vapor deposition device;
402, spraying a first precursor and a second precursor from the upper part of the reaction chamber to the upper surface of the substrate through a gas spraying part of the chemical vapor deposition device;
step 403, supplying a first precursor from below the substrate towards the edge of the substrate through a gas compensation part of the chemical vapor deposition device;
the first precursor is ammonia gas; the second precursor is tungsten hexafluoride gas.
Here, supplying a first precursor to the edge of the substrate means, in particular, that the first precursor can be supplied to the front side edge of the substrate. Through the gas compensation component, the supply compensation of ammonia gas at the edge of the substrate is increased, and the supply concentration of the ammonia gas at the edge of the substrate is improved, so that the ammonia gas is more uniformly distributed on the surface of the substrate, and the uniformity of tungsten nitride film deposition is improved.
In one embodiment, the chemical vapor deposition apparatus further comprises: a support structure and an annular structure; the upper surface of the support structure is used for supporting the substrate; the annular structure is positioned at the edge of the support structure, a first gap is formed between the annular structure and the side surface of the support structure, a second gap is formed between the annular structure and the upper surface of the support structure, and the first gap is communicated with the second gap; the supplying a first precursor from below the substrate toward an edge of the substrate by a gas compensation component of the chemical vapor deposition apparatus, comprising: supplying a first precursor to the first aperture through the gas compensation member, the first precursor flowing along the first aperture to the second aperture to supply the first precursor to an upper surface edge of the substrate.
A third gap can be arranged between the annular structure and the lower surface of the supporting structure, and the third gap is communicated with the first gap; the supplying a first precursor from below the substrate toward an edge of the substrate by a gas compensation component of the chemical vapor deposition apparatus, comprising: supplying a first precursor to the third gap through the gas compensation member, the first precursor flowing along the third gap, the first gap to the second gap to supply the first precursor to an upper surface edge of the substrate.
In a specific embodiment, the method further comprises: supplying a passivating gas through the gas compensating part of the chemical vapor deposition apparatus. Such as argon.
It should be noted that, in the embodiment of the deposition method of the tungsten nitride film provided by the present invention, the adopted chemical vapor deposition apparatus may be the chemical vapor deposition apparatus provided in the foregoing embodiment of the chemical vapor deposition apparatus; the embodiment of the deposition method of the tungsten nitride film and the embodiment of the chemical vapor deposition device belong to the same concept; the technical features of the technical means described in the embodiments may be arbitrarily combined without conflict.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, and any modifications, equivalents, improvements, etc. that are within the spirit and principle of the present invention should be included in the present invention.

Claims (9)

1. A chemical vapor deposition apparatus, comprising: the reaction chamber, the supporting structure, the gas spraying part and the gas compensation part are arranged in the reaction chamber; wherein the content of the first and second substances,
the support structure is arranged in the reaction chamber; the upper surface of the support structure is used for supporting a substrate needing to be deposited with a film;
the gas spraying part is arranged at the upper part of the reaction chamber and is opposite to the upper surface of the supporting structure so as to spray a first precursor and a second precursor to the surface of a substrate supported by the supporting structure;
the gas compensation part is arranged at the lower part of the reaction chamber; the gas compensation component supplies a first precursor from below the support structure towards an edge of the support structure.
2. The chemical vapor deposition apparatus of claim 1, wherein the first precursor is ammonia; the second precursor is tungsten hexafluoride gas.
3. The chemical vapor deposition apparatus of claim 1, further comprising: an annular structure;
the annular structure is positioned at the edge of the support structure, a first gap is formed between the annular structure and the side surface of the support structure, a second gap is formed between the annular structure and the upper surface of the support structure, and the first gap is communicated with the second gap;
the outlet of the gas compensation part is communicated with the first gap.
4. The chemical vapor deposition apparatus of claim 3, wherein a third gap is provided between the ring structure and the lower surface of the support structure, the third gap being in communication with the first gap;
the outlet of the gas compensation part is communicated with the first gap through the third gap.
5. The chemical vapor deposition apparatus according to claim 1,
the gas compensation component is also used to supply a passivation gas.
6. A method for depositing a tungsten nitride film, the method comprising:
putting a substrate needing to be deposited with a tungsten nitride film into a reaction chamber of a chemical vapor deposition device;
spraying a first precursor and a second precursor from an upper portion of the reaction chamber toward an upper surface of the substrate through a gas spraying part of the chemical vapor deposition apparatus;
supplying a first precursor from below the substrate toward an edge of the substrate through a gas compensation component of the chemical vapor deposition apparatus;
the first precursor is ammonia gas; the second precursor is tungsten hexafluoride gas.
7. The method of claim 6, wherein the chemical vapor deposition apparatus further comprises: a support structure and an annular structure; the upper surface of the support structure is used for supporting the substrate; the annular structure is positioned at the edge of the support structure, a first gap is formed between the annular structure and the side surface of the support structure, a second gap is formed between the annular structure and the upper surface of the support structure, and the first gap is communicated with the second gap;
the supplying a first precursor from below the substrate toward an edge of the substrate by a gas compensation component of the chemical vapor deposition apparatus, comprising: supplying a first precursor to the first aperture through the gas compensation member, the first precursor flowing along the first aperture to the second aperture to supply the first precursor to an upper surface edge of the substrate.
8. The method of claim 7, wherein a third gap is formed between the ring structure and the lower surface of the support structure, and the third gap is communicated with the first gap;
the supplying a first precursor from below the substrate toward an edge of the substrate by a gas compensation component of the chemical vapor deposition apparatus, comprising: supplying a first precursor to the third gap through the gas compensation member, the first precursor flowing along the third gap, the first gap to the second gap to supply the first precursor to an upper surface edge of the substrate.
9. The method of claim 6, further comprising: supplying a passivating gas through the gas compensating part of the chemical vapor deposition apparatus.
CN202010797257.XA 2020-08-10 2020-08-10 Chemical vapor deposition device and deposition method of tungsten nitride film Pending CN111996511A (en)

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Publication number Priority date Publication date Assignee Title
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102376549A (en) * 2010-08-12 2012-03-14 东京毅力科创株式会社 Film forming apparatus and film forming method
CN103140914A (en) * 2010-09-17 2013-06-05 圆益Ips股份有限公司 Thin film deposition apparatus
CN107541715A (en) * 2016-06-28 2018-01-05 圆益Ips股份有限公司 Substrate board treatment and the membrane deposition method using the substrate board treatment

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