CN111146077A - Method for improving film defects - Google Patents
Method for improving film defects Download PDFInfo
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- CN111146077A CN111146077A CN201911364401.4A CN201911364401A CN111146077A CN 111146077 A CN111146077 A CN 111146077A CN 201911364401 A CN201911364401 A CN 201911364401A CN 111146077 A CN111146077 A CN 111146077A
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- wafer
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- improving film
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- film defects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
Abstract
The invention provides a method for improving film defects, which comprises the following steps: conveying the gas phase substance to the surface of the wafer in the reaction chamber; the gas phase substance is subjected to chemical reaction to form reaction molecules; the reaction molecules are adsorbed on the surface of the wafer, nucleate on the surface of the wafer and gradually enlarge and deposit into a film; after deposition is finished, pumping the gaseous by-product out of the reaction cavity; the NH3 plasma treatment is performed on the surface of the wafer to reduce the generation of defects on the surface of the wafer. According to the invention, after the chemical vapor deposition is finished, N2 is used as a carrier gas to be introduced into NH3 plasma, and the surface of the wafer is treated to neutralize dangling bonds, so that the number of silicon nitride defects can be obviously reduced, and the product yield is improved.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a method for improving film defects.
Background
SiN is a functional material with excellent performance, and has good dielectric property, high insulation property and high barrier capability. Therefore, SiN is used as an efficient device interlayer insulation, dielectric capacitance, wear-resistant and corrosion-resistant layer and a device surface passivation layer. SiN films are typically obtained by chemical vapor deposition, the reaction being of the formula: 3SiH4+4NH3 → Si3N4+12H 2.
Referring to fig. 1, fig. 1 is a schematic diagram of a reaction chamber for chemical vapor deposition in the prior art. The SiN precipitation principle is that reactants are adsorbed on the surface of a wafer in vacuum, the reactants have high adhesion coefficients and are easy to migrate on the surface of the wafer to finally form a film, and byproducts are desorbed from a bottom of the wafer and are pumped away by a vacuum pump along with main air flow. But the SiN film may have Bump defects (Bump defects) after the reaction is completed. TEM section verification is carried out, and no defect exists under the bulge. The migration of SiN molecules with dangling bonds at the surface and the reaction of gases in the pipe are proved to be the cause of generating the bulge defects. As line widths continue to shrink, yields become more susceptible to defects.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a method for improving film defects, which is used to solve the problem that the wafer surface generates protrusion defects during SiN deposition, thereby affecting the product yield in the prior art.
To achieve the above and other related objects, the present invention provides a method for improving defects of a thin film, the method comprising at least the steps of:
firstly, gas-phase substances are transmitted to the surface of a wafer in a reaction cavity;
step two, forming reaction molecules after the gas-phase substances are subjected to chemical reaction;
step three, adsorbing the reaction molecules on the surface of the wafer, nucleating on the surface of the wafer, gradually enlarging and depositing the reaction molecules into a film;
after deposition is finished, pumping the gaseous by-product out of the reaction cavity;
and step five, performing NH3 plasma treatment on the surface of the wafer to reduce the generation of defects on the surface of the wafer.
Preferably, the gas phase in step one comprises SiH4 and NH 3.
Preferably, the reaction molecule formed by the chemical reaction of the gas phase in the second step is Si3N 4.
Preferably, the gaseous by-product after completion of the deposition in step four comprises H2.
Preferably, the method for performing NH3 plasma processing on the surface of the wafer in the fifth step includes: NH3 plasma gas is introduced into the reaction cavity by taking N2 as a carrier.
Preferably, the time for performing the NH3 plasma treatment on the surface of the wafer in the fifth step is 20-30 s.
Preferably, the reaction program of the reaction chamber is established before the first step is performed.
Preferably, the wafer surface is preheated after the reaction program of the reaction chamber is established and before the step one is performed.
As described above, the method for improving film defects of the present invention has the following beneficial effects: according to the invention, after the chemical vapor deposition is finished, N2 is used as a carrier gas to be introduced into NH3 plasma, and the surface of the wafer is treated to neutralize dangling bonds, so that the number of silicon nitride defects can be obviously reduced, and the product yield is improved.
Drawings
FIG. 1 is a schematic diagram of a prior art CVD chamber;
FIG. 2 is a flow chart illustrating a method for improving film defects according to the present invention;
FIG. 3 is a graph showing a comparison of the number of defects before and after the method for improving defects of a thin film according to the present invention is applied.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 2 to 3. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
The present invention provides a method for improving film defects, as shown in fig. 2, fig. 2 is a schematic flow chart of the method for improving film defects of the present invention, and the method comprises the following steps:
firstly, gas-phase substances are transmitted to the surface of a wafer in a reaction cavity; the invention further improves the defects of the silicon nitride film deposited on the surface of the wafer, and the silicon nitride film is formed in PECVD (chemical vapor deposition). Therefore, it is necessary to transport gas-phase substances to the wafer surface for reaction to form the silicon nitride film, and further, the gas-phase substances required to be introduced into the reaction chamber in the first step include SiH4 and NH 3. The SiH4 and NH3 are gaseous species. The gaseous reaction substance is adsorbed on the surface of the wafer in the reaction chamber of the vacuum environment.
Step two, forming reaction molecules after the gas-phase substances are subjected to chemical reaction; in the invention, the reaction molecule formed by the chemical reaction of the gas phase in the second step is Si3N4, and the reaction formula of the chemical reaction of the gas phase SiH4 and NH3 in the invention is: 3SiH4+4NH3 → Si3N4+12H2, and silicon nitride and hydrogen are generated after the reaction, wherein the hydrogen is a byproduct.
Step three, adsorbing the reaction molecules on the surface of the wafer, nucleating on the surface of the wafer, gradually enlarging and depositing the reaction molecules into a film; the silicon nitride (Si3N4) molecules formed after the reaction are adsorbed on the surface of the wafer, the reactant silicon nitride has high adhesiveness, and the silicon nitride gradually grows after the silicon nitride nucleates on the surface of the wafer, and finally a deposited silicon nitride film is formed on the surface of the wafer.
After deposition is finished, pumping the gaseous by-product out of the reaction cavity; further, the invention provides that the gaseous by-product after completion of the deposition in step four comprises H2. And after the silicon nitride film is formed in the third step, stopping introducing the reactants for stopping the reaction, generating by-products in the reaction cavity, desorbing the by-products from the substrate of the wafer, and pumping away the by-products along with the main gas flow by a vacuum pump. Since the reaction products of SiH4 and NH3 are silicon nitride and hydrogen, the hydrogen is pumped away as a by-product by a vacuum pump.
And step five, performing NH3 plasma treatment on the surface of the wafer to reduce the generation of defects on the surface of the wafer. Because the silicon nitride molecules with dangling bonds in the prior art migrate on the surface and react with gas in the pipeline to generate the bulge defect, the NH3 plasma treatment is carried out on the surface of the wafer after the silicon nitride is deposited in the step five of the invention so as to overcome the bulge forming defect in the prior art.
Further, the method for performing NH3 plasma processing on the wafer surface in step five includes: NH3 plasma gas is introduced into the reaction cavity by taking N2 as a carrier. That is, in the embodiment of the invention, the NH3 plasma gas is introduced into the reaction chamber, and N2 carrying NH3 plasma gas is introduced into the reaction chamber with N2 as a carrier, so as to process the surface of the wafer.
In the fifth step, the time for performing the NH3 plasma treatment on the surface of the wafer is 20-30 s. In the embodiment, the time for performing the NH3 plasma processing on the wafer surface in step five is 30 s. That is, the surface of the wafer is treated by NH3 plasma for 30s to prevent the protrusion defect.
The invention further establishes the reaction program of the reaction chamber before the step one, namely establishes the recipe program of the reaction. The process of reaction is performed according to the recipe.
The present invention further provides a method for pre-heating the wafer surface after the reaction program of the reaction chamber is established and before the first step is performed. That is, after the recipe is established, the wafer surface is preheated, and then the steps one to five of the present invention are performed.
Referring to fig. 3, fig. 3 is a graph showing a comparison of the number of defects before and after the method for improving defects of a thin film according to the present invention is applied. In fig. 3, the left-hand bar graph shows that the number of the protrusion defects formed on the wafer surface after the deposition of the silicon nitride film on the wafer surface without using the method of the present invention is more than 100, and the right-hand bar graph shows that the number of the protrusion defects on the wafer surface after the deposition of the new-wall silicon nitride film on the wafer surface using the method of the present invention is greatly reduced to about 20.
In summary, in the invention, after the chemical vapor deposition is completed, N2 is used as a carrier gas to be introduced into NH3 plasma, and the surface of the wafer is treated to neutralize dangling bonds, so that the number of SiN defects can be reduced significantly, and the yield of the product can be improved. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (8)
1. A method for improving film defects, the method comprising:
firstly, gas-phase substances are transmitted to the surface of a wafer in a reaction cavity;
step two, forming reaction molecules after the gas-phase substances are subjected to chemical reaction;
step three, adsorbing the reaction molecules on the surface of the wafer, nucleating on the surface of the wafer, gradually enlarging and depositing the reaction molecules into a film;
after deposition is finished, pumping the gaseous by-product out of the reaction cavity;
and step five, performing NH3 plasma treatment on the surface of the wafer to reduce the generation of defects on the surface of the wafer.
2. The method for improving film defects according to claim 1, wherein: the gas phase in step one comprises SiH4 and NH 3.
3. The method for improving film defects according to claim 1, wherein: and in the second step, the gas phase is subjected to chemical reaction to form reaction molecules Si3N 4.
4. The method for improving film defects according to claim 3, wherein: the gaseous by-product after the deposition in step four includes H2.
5. The method for improving film defects according to claim 4, wherein: in the fifth step, the method for performing the NH3 plasma processing on the surface of the wafer includes: NH3 plasma gas is introduced into the reaction cavity by taking N2 as a carrier.
6. The method for improving film defects according to claim 5, wherein: and in the fifth step, the time for performing NH3 plasma treatment on the surface of the wafer is 20-30 s.
7. The method for improving film defects according to claim 1, wherein: before proceeding step one, the reaction program of the reaction chamber is established.
8. The method for improving film defects according to claim 7, wherein: after the reaction program of the reaction chamber is established, the surface of the wafer is preheated before the step one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911364401.4A CN111146077A (en) | 2019-12-26 | 2019-12-26 | Method for improving film defects |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911364401.4A CN111146077A (en) | 2019-12-26 | 2019-12-26 | Method for improving film defects |
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| CN111146077A true CN111146077A (en) | 2020-05-12 |
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| CN201911364401.4A Withdrawn CN111146077A (en) | 2019-12-26 | 2019-12-26 | Method for improving film defects |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113517170A (en) * | 2021-07-09 | 2021-10-19 | 长鑫存储技术有限公司 | Manufacturing method of semiconductor structure, semiconductor structure and memory |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002368084A (en) * | 2001-06-12 | 2002-12-20 | Hitachi Ltd | Method of manufacturing semiconductor integrated circuit device |
| CN102800760A (en) * | 2012-08-29 | 2012-11-28 | 英利能源（中国）有限公司 | Manufacture method of solar cell with multi-layer silicon nitride antireflection films |
| CN102903665A (en) * | 2011-07-25 | 2013-01-30 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method of semiconductor device |
| US20150031218A1 (en) * | 2012-03-15 | 2015-01-29 | Tokyo Electron Limited | Film forming process and film forming apparatus |
-
2019
- 2019-12-26 CN CN201911364401.4A patent/CN111146077A/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002368084A (en) * | 2001-06-12 | 2002-12-20 | Hitachi Ltd | Method of manufacturing semiconductor integrated circuit device |
| CN102903665A (en) * | 2011-07-25 | 2013-01-30 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method of semiconductor device |
| US20150031218A1 (en) * | 2012-03-15 | 2015-01-29 | Tokyo Electron Limited | Film forming process and film forming apparatus |
| CN102800760A (en) * | 2012-08-29 | 2012-11-28 | 英利能源（中国）有限公司 | Manufacture method of solar cell with multi-layer silicon nitride antireflection films |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113517170A (en) * | 2021-07-09 | 2021-10-19 | 长鑫存储技术有限公司 | Manufacturing method of semiconductor structure, semiconductor structure and memory |
| CN113517170B (en) * | 2021-07-09 | 2024-02-09 | 长鑫存储技术有限公司 | Method for manufacturing semiconductor structure, semiconductor structure and memory |
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