CN112899658A

CN112899658A - ALD processing equipment and processing method

Info

Publication number: CN112899658A
Application number: CN202110076882.XA
Authority: CN
Inventors: 万军; 王辉; 廖海涛; 王斌
Original assignee: Wuxi Yijing Semiconductor Technology Co ltd
Current assignee: Advanced Materials Technology and Engineering Inc
Priority date: 2021-01-20
Filing date: 2021-01-20
Publication date: 2021-06-04

Abstract

The invention relates to an ALD processing device and a processing method. Processing equipment's reactor includes vacuum chamber and reaction chamber, place in the vacuum chamber in the reaction chamber, inlet channel and outlet channel have been seted up to reaction chamber's bottom, inlet channel and outlet channel set up with the central line of reaction chamber's bottom relatively, be provided with first material mouth on reaction chamber's the lateral wall, be provided with the second material mouth on the lateral wall of vacuum chamber, first material mouth and second material mouth are located same one side of reactor, conveyor sets up the outside at the reactor, conveyor includes conveying mechanism, with the first sealing door of first material mouth seal and with the sealed second sealing door of second material mouth. The invention ensures the forming quality and consistency of the deposited film, has high film forming efficiency and short period, improves the utilization rate of the precursor source, is suitable for batch production and has good practical value.

Description

ALD processing equipment and processing method

Technical Field

The invention relates to the technical field of semiconductor nano-film deposition, in particular to ALD (atomic layer deposition) processing equipment and a processing method.

Background

With the increasing complexity of ICs, the characteristic dimensions of mosfet devices in silicon-based semiconductor integrated circuits will reach the nanometer scale according to the well-known moore's law and the international roadmap for semiconductor technology development published by the international association in the semiconductor industry. Atomic Layer Deposition (ALD) has the characteristics of excellent three-dimensional conformality, large-area uniformity, accurate sub-monolayer film thickness control and the like, and is favored by the microelectronic industry and the nano-technology field.

In the prior art, the atomic layer deposition processing has the technical scheme that: the substrate is placed in a sealed reactor and a vapor phase precursor source is alternately introduced into the reactor to chemisorb and react to form a deposited film on the substrate.

In the technical scheme for realizing the invention, the applicant finds that the prior art has at least the following defects:

in the prior art, the technical scheme that the gas-phase precursor source is alternately and impulsively introduced into the reactor is difficult to ensure that the precursor source covers the whole matrix completely, pinholes are easy to form and the like, so that the precursor source is not uniformly contacted with the matrix, the uniformity of a deposited film is poor, the quality is difficult to ensure, and meanwhile, due to incomplete reaction, the large amount of the precursor source is filled, so that the precursor source is greatly remained, the film forming efficiency is low, the period is long, and the waste of the precursor source is caused.

Therefore, improvements in the prior art are needed.

Disclosure of Invention

The invention provides ALD processing equipment and a processing method, which solve or partially solve the technical problems that in the prior art, the uniformity of a deposited film is poor, the quality is difficult to guarantee, the film forming efficiency is low, the period is long, and the waste of a precursor source is caused.

The technical scheme of the invention is as follows:

in one aspect, the present invention provides an ALD processing apparatus comprising:

the reactor comprises a vacuum chamber and a reaction chamber, the reaction chamber is arranged in the vacuum chamber, the bottom of the reaction chamber is provided with an air inlet channel and an air outlet channel, the air inlet channel and the air outlet channel are oppositely arranged along the central line of the bottom of the reaction chamber, the side wall of the reaction chamber is provided with a first material port, the side wall of the vacuum chamber is provided with a second material port, and the first material port and the second material port are positioned on the same side of the reactor;

conveyor, conveyor sets up the outside of reactor, conveyor includes conveying mechanism, first sealing door and second sealing door, through the operation conveying mechanism, can the propelling movement first sealing door and the second sealing door removes, so that first sealing door is sealed first material mouth, the second sealing door is sealed the second material mouth, first sealing door dorsad be provided with the support piece that is used for placing the base member on the side of second sealing door.

Furthermore, the air inlet channels are in a hole shape, the number of the air inlet channels is multiple, and the multiple air inlet channels are arranged on one side of the bottom of the reaction chamber;

the gas outlet channel is porous, the gas outlet channel is also provided with a plurality of gas outlet channels, and the gas outlet channels are arranged on the other side of the bottom of the reaction chamber.

Furthermore, the air inlet channels are provided with a plurality of groups, the plurality of groups of air inlet channels are sequentially arranged along a second direction, each group of air inlet channels is arc-shaped, and the aperture of each air inlet channel of each group of air inlet channels is sequentially reduced towards the direction close to the central line of the bottom of the reaction chamber;

the air outlet channel is provided with a plurality of groups, the air outlet channels are sequentially arranged along a second direction, each group of air outlet channels are arc-shaped, and each air inlet channel of each air outlet channel is sequentially reduced in the direction close to the central line of the bottom of the reaction chamber.

Further, the bottom of the reaction chamber is fixedly provided with a transfer chamber, the top of the transfer chamber is open, the bottom of the reaction chamber covers the top of the transfer chamber, two partition plates are arranged in the transfer chamber, the transfer chamber is divided into a first chamber, a second chamber and a third chamber along a second direction, the air inlet channel is communicated with the first chamber, the air outlet channel is communicated with the third chamber, the bottom of the first chamber is provided with an air inlet main hole, and the bottom of the third chamber is provided with an air outlet main hole.

Further, the reaction chamber and the vacuum chamber are provided with vacuuming holes.

Furthermore, two gas homogenizing plates are arranged in the reaction chamber, the two gas homogenizing plates are arranged oppositely by the central line of the bottom of the reaction chamber, the two gas homogenizing plates are arranged between the gas inlet channel and the gas outlet channel, the reaction chamber is divided into a gas inlet chamber, a reaction chamber and a gas outlet chamber by the two gas homogenizing plates along a second direction, and each gas homogenizing plate is provided with a plurality of through holes;

the first material port and the second material port are arranged between the two gas homogenizing plates.

Further, the output end of the conveying mechanism can move back and forth in a straight line towards the direction of the second material port, the second sealing door is arranged at the output end of the conveying mechanism, and the first sealing door is fixedly connected to the side, back to the conveying mechanism, of the second sealing door through a connecting piece.

Further, a first heater is arranged on the side surface of the first sealing door facing the second sealing door;

a second heater is arranged between the top of the reaction chamber and the top of the vacuum chamber;

a third heater is arranged between the bottom of the reaction chamber and the bottom of the vacuum chamber;

a fourth heater is disposed between the side of the reaction chamber and the side of the vacuum chamber.

Furthermore, a first heat reflection assembly is arranged between the first heater and the second sealing door;

a second heat reflecting assembly is arranged between the second heater and the top of the vacuum chamber;

a third heat reflection assembly is arranged between the third heater and the bottom of the vacuum chamber;

a fourth heat reflection assembly is disposed between the fourth heater and the side of the vacuum chamber.

In another aspect, the present invention also provides an ALD processing method, which is performed based on the above processing apparatus, the processing method including:

providing a substrate, placing the provided substrate on a support;

the operation conveying device pushes the first sealing door and the second sealing door to move, so that the first sealing door seals the first material opening, and the second sealing door seals the second material opening;

vacuumizing the vacuum chamber and the reaction chamber for disposal;

injecting a precursor source from an air inlet channel of the reaction chamber, and after the precursor source sweeps the substrate in the reaction chamber, discharging the substrate from an air outlet channel of the reaction chamber to carry out ALD processing on the substrate;

and operating a conveying device, pushing the first sealing door and the second sealing door to move to the outer side of the reactor, and conveying the processed substrate to the outside of the reactor.

One or more technical schemes provided by the invention at least have the following technical effects or advantages:

in the invention, the precursor source is injected into the reaction chamber from the gas inlet channel of the reaction chamber and is discharged from the gas outlet channel of the reaction chamber, and the gas inlet channel and the gas outlet channel are oppositely arranged by the central line of the bottom of the reaction chamber, so the fluid field in the reaction chamber is laminar flow, the gas inlet and the gas exhaust of the precursor source are directly communicated with the reaction chamber, the risk of leakage of the precursor source at the butt joint is avoided, the precursor source flows in the reaction chamber along the second direction, the volume of the reaction chamber can be reduced, the length of uniform gas is increased, the uniformity of gas flow is improved, the phenomenon of gas disorder is reduced, the whole substrate can be ensured to be fully covered by the precursor source, the contact between the precursor source and the substrate is uniform, the uniformity of a deposited film is improved, the forming quality and the uniformity of the deposited film are ensured, the film forming efficiency is high, the period is short, the utilization rate of the precursor source is, is suitable for batch production and has good practical value.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

FIG. 1 is a schematic diagram of an ALD process apparatus of the present embodiment;

FIG. 2 is a schematic structural diagram of a vacuum chamber of the present embodiment;

FIG. 3 is a schematic structural diagram of a reaction chamber according to the present embodiment;

FIG. 4 is a schematic top view of the reaction chamber of the present embodiment;

FIG. 5 is a schematic structural view of a reaction chamber according to example 3;

FIG. 6 is a schematic sectional view of a reactor of this example;

FIG. 7 is a schematic flow chart illustrating the ALD processing method of the present embodiment.

Detailed Description

It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.

Example 1:

the embodiment discloses an ALD processing apparatus.

FIG. 1 is a schematic structural diagram of an ALD processing apparatus of the present embodiment, which includes a reactor and a delivery device, in conjunction with FIG. 1.

Referring to fig. 1, the reactor of the present embodiment includes a vacuum chamber 1 and a reaction chamber 2, and the reaction chamber 2 is disposed in the vacuum chamber 1.

Fig. 2 is a schematic structural diagram of a vacuum chamber of this embodiment, fig. 3 is a schematic structural diagram of a reaction chamber of this embodiment, and with reference to fig. 1 to fig. 3, a first material port 3 is disposed on a side wall of the reaction chamber 2 of this embodiment, a second material port 4 is disposed on a side wall of the vacuum chamber 1, and the first material port and the second material port are located on the same side of the reactor.

With reference to fig. 1, the conveying device of this embodiment is disposed outside the reactor, and the conveying device includes a conveying mechanism 5, a first sealing door 6 and a second sealing door 7, and by operating the conveying mechanism, the first sealing door 6 and the second sealing door 7 can be pushed to move, so that the first sealing door 5 seals the first material opening 3, the second sealing door 7 seals the second material opening 4, and a support member 8 for placing a substrate is disposed on a side of the first sealing door 6 facing away from the second sealing door 7.

In implementation, the substrate may be placed on the support member 8, and then the first sealing door 6 and the second sealing door 7 may be pushed to move by operating the conveying mechanism, so that the first sealing door 5 seals the first material port 3, and the second sealing door 7 seals the second material port 4, at this time, the vacuum chamber 1 and the reaction chamber 2 are both in a closed environment, and the support member 8 on which the substrate is placed is located in the reaction chamber 2 to perform ALD processing of the substrate. After the processing of the base body is finished, the conveying mechanism can be operated, namely the first sealing door 6 and the second sealing door 7 can be pushed to move again for resetting, and the processed base body is conveyed to the outside of the reactor.

Example 2:

this example provides a reaction chamber suitable for use in the ALD processing apparatus of example 1.

Fig. 4 is a schematic top view of the reaction chamber of the present embodiment, and referring to fig. 3 and fig. 4, a gas inlet channel 9 and a gas outlet channel 10 are formed at the bottom of the reaction chamber 2 of the present embodiment, and the gas inlet channel 9 and the gas outlet channel 10 are disposed opposite to each other with respect to a center line of the bottom of the reaction chamber 2.

In the specific implementation, the precursor source is injected into the reaction chamber 2 from the gas inlet channel 9 of the reaction chamber 2 and is discharged from the gas outlet channel 10 of the reaction chamber 2, because the gas inlet channel 9 and the gas outlet channel 10 are oppositely arranged by the central line of the bottom of the reaction chamber 2, the fluid field in the reaction chamber 2 is laminar flow, and the gas inlet and the gas exhaust of the precursor source are directly communicated with the reaction chamber, thereby avoiding the risk of the precursor source leaking at the butt joint, in addition, the precursor source flows in the reaction chamber 2 along the second direction, which not only can reduce the volume of the reaction chamber, but also increases the length of uniform gas, improves the uniformity of gas flow, reduces the phenomenon of the gas disorder, can ensure that the precursor source can fully cover the whole substrate, enables the precursor source to be uniformly contacted with the substrate, improves the uniformity of the deposition film, and ensures the forming quality and uniformity of the deposition film, the method has the advantages of high film forming efficiency, short period, improvement of the utilization rate of precursor sources, suitability for batch production and good practical value.

Referring to fig. 4, the gas inlet channels 9 in this embodiment are porous, a plurality of gas inlet channels 9 are provided at one side of the bottom of the reaction chamber 2, correspondingly, the gas outlet channels 10 are also porous, a plurality of gas outlet channels 10 are provided, and a plurality of gas outlet channels 10 are provided at the other side of the bottom of the reaction chamber 2.

Further, combine fig. 4, the inlet channel 9 of this embodiment is provided with the multiunit, multiunit inlet channel 9 sets gradually, every inlet channel 9 of group all is the arc, the aperture of each inlet channel 9 of every inlet channel 9 of group reduces to the direction of the central line that is close to the bottom of reaction chamber 2 in proper order, correspondingly, outlet channel 10 is provided with the multiunit, multiunit outlet channel 10 sets gradually, every outlet channel 10 of group all is the arc, the aperture of each inlet channel 4 of every outlet channel 10 of group reduces to the direction of the central line that is close to the bottom of reaction chamber 2 in proper order, can further improve the homogeneity that precursor source purged to the base member like this, improve the shaping quality of sedimentary membrane.

Of course, the inlet channels 9 and the outlet channels 10 in this embodiment may also have other shapes, such as a strip shape and a square shape, on the premise of the strip shape, a plurality of inlet channels 9 are provided at one side of the bottom of the reaction chamber 2, a plurality of outlet channels 10 are also provided, a plurality of outlet channels 10 are provided at the other side of the bottom of the reaction chamber 2, and in order to ensure the purging uniformity, the size of the inlet channels 9 in this embodiment is sequentially reduced toward the direction close to the center line of the bottom of the reaction chamber 2, and the size of the outlet channels 10 is sequentially reduced toward the direction close to the center line of the bottom of the reaction chamber 2.

Example 3:

this example provides a reaction chamber suitable for use in the ALD processing apparatus of examples 1 or 2.

Fig. 5 is a schematic structural diagram of a reaction chamber in example 3, and the reaction chamber in this example is different from the reaction chamber in example 2 in that: be provided with two even gas boards 11 in this reaction chamber 2, two even gas boards 11 set up with the central line of reaction chamber 2's bottom relatively, and two even gas boards 11 set up between inlet channel 9 and outlet channel 10, and two even gas boards 11 divide reaction chamber into inlet chamber, reaction chamber and outlet chamber along the second direction, all set up a plurality of through-holes on every even gas board 11.

The precursor source can enter the air inlet cavity through the air inlet channel 9, then enter the reaction cavity through the air uniform plate 11 on the same side of the air inlet cavity, purge the matrix, then be discharged into the air outlet cavity through the air uniform plate 11 on the same side of the air outlet cavity, and be discharged through the air outlet channel 10, and the two air uniform plates 11 can further improve the flowing uniformity of the precursor source.

In addition, in the embodiment, the central axes of the through holes on the two gas uniform plates 11 can be obliquely arranged, so that a symmetrical splayed shape can be formed, and the purging effect is better.

It should be noted that, in the case that two gas uniform plates 11 are disposed in the reaction chamber 2, the first material port 3 and the second material port 4 are disposed between the two gas uniform plates 11, that is, the conveying direction of the conveying mechanism is perpendicular to the connecting line between the two gas uniform plates 11, so as to convey the substrate into the reaction chamber 2 between the two gas uniform plates 11.

Example 4:

this example provides a reaction chamber suitable for use in the ALD process apparatus of examples 1-3.

Fig. 6 is a schematic cross-sectional view of the reactor of this embodiment, referring to fig. 1, fig. 3 and fig. 6, in this embodiment, a transfer chamber 12 is fixedly disposed at the bottom of a reaction chamber 2, the top of the transfer chamber 12 is open, the bottom of the reaction chamber 2 covers the top of the transfer chamber 12, so that the transfer chamber 12 forms a sealed cavity, two partition plates 13 are disposed in the transfer chamber 12, the transfer chamber 12 is divided into a first chamber 121, a second chamber 122 and a third chamber 123 along a second direction by the two partition plates 13, an air inlet channel 9 is communicated with the first chamber 121, an air outlet channel 10 is communicated with the third chamber 123, an air inlet main hole 14 is disposed at the bottom of the first chamber 121, and an air outlet main hole 15 is disposed at the bottom of the third chamber 123.

In specific implementation, the gas inlet device may inject the precursor source into the first chamber 121 through the main gas inlet hole 14, transfer the precursor source into the reaction chamber 2 through the first chamber 121, and transfer the precursor source into the third chamber 123 after purging in the reaction chamber 2 to the main gas outlet hole 15, and lead out the precursor source through the gas exhaust device, so as to increase the gas homogenizing time of the precursor source and improve the purging efficiency.

In this embodiment, the top cross-sections of the first chamber 121 and the third chamber 123 may be fan-shaped, but may also be other shapes, such as square, oval, etc., which is not limited in this embodiment, and the second chamber 122 may be solid, which improves the strength of the transfer chamber 12.

Further, referring to fig. 3 and fig. 6, in this embodiment, two partition plates 13 are disposed between the gas inlet channel 9 and the gas outlet channel 10, the gas inlet main hole 14 is disposed between the gas inlet channel 9 and the partition plate 13 on the same side, the gas outlet main hole 15 is disposed between the gas outlet channel 10 and the partition plate 13 on the same side, and the gas inlet main hole 14 and the gas outlet main hole 15 are disposed opposite to each other along a center line of the bottom of the reaction chamber 2, that is, a distance between the gas inlet main hole 14 and the gas outlet main hole 15 in this embodiment is smaller than a distance between the gas inlet channel 9 and the gas outlet channel 10, so that a gas homogenizing time of the precursor source can be further increased, and the purging efficiency.

Further, in this embodiment, after the substrate is placed in the reaction chamber 2, a vacuum process is required to improve the film formation quality of the substrate, and therefore, the reaction chamber 2 and the vacuum chamber 1 of this embodiment are both required to be provided with vacuum holes.

Specifically, in the embodiment, with reference to fig. 1, 3 and 6, the second chamber 122 of the transfer chamber 12 may be vertically provided with a through air hole as a vacuum hole, and an air inlet pipe 16, an air outlet pipe 17 and a vacuum pipe 18 may be provided between the bottom of the transfer chamber 12 and the bottom of the vacuum chamber 1, wherein an upper end of the air inlet pipe 16 is communicated with the main air inlet hole 14, a lower end of the air inlet pipe 16 passes through the bottom of the vacuum chamber 1 and is communicated with an air inlet device to inject the precursor source into the reaction chamber 2, an upper end of the air outlet pipe 17 is communicated with the main air outlet hole 15, a lower end of the air outlet pipe 17 passes through the bottom of the vacuum chamber 1 and is communicated with an air exhaust device to exhaust the purged precursor source from the reaction chamber 2, an upper end of the vacuum pipe 18 is communicated with the air hole 16, a lower end of the vacuum pipe 18 passes through the bottom of the vacuum, the vacuum tube 18 is provided with a plurality of pumping holes, so that the reaction chamber 2 and the vacuum chamber 1 can be simultaneously pumped by operating the vacuum pumping device, thereby optimizing the structure and reducing the cost.

Example 5:

this example provides a delivery apparatus suitable for use in the ALD process plants of examples 1-4.

Referring to fig. 1, in this embodiment, the output end of the conveying mechanism 5 can move back and forth in a straight line towards the direction of the second material port 4, the second sealing door 7 is disposed at the output end of the conveying mechanism 5, and the first sealing door 6 is fixedly connected to the side of the second sealing door 7, which faces away from the conveying mechanism 5, through the connecting member 19.

In this embodiment, the conveying device may include a base 20, the base 20 is fixedly disposed outside the reactor, the top of the base 20 is a plane, the base 20 is provided with a reaction seat 21, and the fixed end of the conveying mechanism 5 is fixedly disposed on the reaction seat 21. The conveying mechanism 5 of the present embodiment may be provided in plural, and the plural conveying mechanisms 5 act on the second sealing door 7 together to improve the conveying reliability and conveying efficiency of the second sealing door 7 and the first sealing door 6.

The conveying mechanism 5 of the present embodiment may be a cylinder or a motor, but the present embodiment is not limited thereto.

In this embodiment, the connecting member 19 may be a plate member, which may be fixedly disposed between the bottoms of the second sealing door 7 and the first sealing door 6, and of course, the connecting member 19 may also be square or annular, so as to be fixedly connected between the peripheries of the second sealing door 7 and the first sealing door 6, thereby improving the connection reliability of the second sealing door 7 and the first sealing door 6.

The support 8 of this embodiment is a plate, which is preferably fixedly arranged at the bottom of the first sealing door 6 for increasing the number of substrates to be processed. In addition, the present embodiment may be provided with a diagonal brace between the bottom of the supporter 8 and the first sealing door 6 to improve the reliability of the supporter 8.

Example 6:

this example is applicable to the ALD process equipment of examples 1-5.

Referring to fig. 1, the processing apparatus of the present embodiment further includes a first heater 22, a second heater 23, a third heater 24, and a fourth heater 25, wherein the first heater 22 is disposed on a side of the first sealing door 6 facing the second sealing door 7, the second heater 23 is disposed between the top of the reaction chamber 2 and the top of the vacuum chamber 1, the third heater 24 is disposed between the bottom of the reaction chamber 2 and the bottom of the vacuum chamber 1, and the fourth heater 25 is disposed between the side of the reaction chamber 2 and the side of the vacuum chamber 1.

When the first sealing door 6 seals the first material port 3, the output end of the first heater 22 acts on the first sealing door 6, and the first heater 22 is matched with the second heater 23, the third heater 24 and the fourth heater 25, so that independent radiation heating and temperature control of the top, side and bottom regions of the reaction chamber 2 can be realized, a uniform temperature field is formed in a large space, the heating temperature of the precursor source is rapidly increased to the required temperature, and the heating efficiency is high.

The heating assembly of this embodiment includes a heating wire, and the heating wire can be the concentric ripple setting.

In addition, referring to fig. 1, the processing apparatus of the present embodiment further includes a first heat reflection assembly 26, a second heat reflection assembly 27, a third heat reflection assembly 28, and a fourth heat reflection assembly 29, the first heat reflection assembly 26 is disposed between the first heater 22 and the second sealing door 7, the second heat reflection assembly 27 is disposed between the second heater 23 and the top of the vacuum chamber 1, the third heat reflection assembly 28 is disposed between the third heater 24 and the bottom of the vacuum chamber 1, and the fourth heat reflection assembly 29 is disposed between the fourth heater 25 and the side of the vacuum chamber 1.

The heat reflection assembly of the present embodiment is used to reflect the heat generated by the corresponding heater during operation to the reaction container 2, so as to further increase the heating rate of the precursor source.

In this embodiment, each heat reflection assembly all includes a plurality of heat reflection boards that set gradually, and the contact form of two adjacent heat reflection boards is the multiple spot contact, has the heat reflection efficient, and the energy saving improves the homogeneity of temperature field's characteristics.

Preferably, the thickness of each heat reflection plate of the present embodiment may be 0.04-1mm, and the space between every two adjacent heat reflection plates is 0.05-0.1mm, so as to reduce the size of the space.

This embodiment utilizes the heating direction that each heat reflection assembly can restrict the heater that corresponds, only heats reaction chamber 2 like this, and vacuum chamber 1's temperature can keep the normal atmospheric temperature, need not adopt cooling facilities such as water-cooling to cool down vacuum chamber 1 to retrench the structure, have fine practicality.

Referring to fig. 1, in the present embodiment, a first mounting plate 30 may be fixedly disposed on a side of the first sealing door 6 facing the second sealing door 7, the first mounting plate 30 may provide a mounting carrier for the first heater 22 and the first heat reflection assembly 26, a second mounting plate 31 may be fixedly disposed on a top of the reaction chamber 1, the second mounting plate 31 may provide a mounting carrier for the second heater 23 and the second heat reflection assembly 27, a third mounting plate 32 may be disposed on a bottom of the reaction chamber 1, the third mounting plate 32 may provide a mounting carrier for the third heater 24 and the third heat reflection assembly 28, a fourth mounting plate 33 may be disposed on an outer side of the reaction chamber 1, the fourth mounting plate 33 may provide a mounting carrier for the fourth heater 25 and the fourth heat reflection assembly 29, and a notch for the first sealing door 6 to pass through is required to be disposed on the fourth mounting plate 33.

Further, in this embodiment, the edge of each mounting plate is provided with a turning plate extending to the reaction chamber, and the heating direction of the corresponding heater can be limited, so as to improve the heating efficiency of the corresponding heater.

Example 7:

this example discloses an ALD process carried out in an ALD process apparatus based on examples 1-6.

FIG. 7 is a schematic flow chart of an ALD processing method of the present embodiment, which, in conjunction with FIG. 7, includes:

s1: providing a substrate, and placing the provided substrate on a support;

s2: the conveying device is operated to push the first sealing door 6 and the second sealing door 7 to move, so that the first sealing door 6 seals the first material opening 3, and the second sealing door 7 seals the second material opening 7;

s3: vacuumizing the vacuum chamber 1 and the reaction chamber 2;

s4: injecting a precursor source from an air inlet channel 9 of the reaction chamber 1, after the precursor source sweeps the substrate in the reaction chamber 1, discharging the substrate from an air outlet channel 10 of the reaction chamber 1, and performing ALD processing on the substrate;

s5: the conveyor is operated to push the first sealing door 6 and the second sealing door 7 to move to the outside of the reactor, and the processed substrate is transported to the outside of the reactor.

In S1 of this embodiment, the substrate may be placed on a frame, and the frame with the substrate mounted thereon may be placed on the support 8 by an automated device such as a robot.

In this embodiment, S4 further includes heating the reaction chamber 2, and the heating temperature can be set according to the processing requirement, which is not limited in this embodiment.

S4 of this embodiment specifically includes:

and sequentially and alternately injecting a precursor source into the reaction chamber 2 from the gas inlet channel 9 of the reaction chamber 2 in a pulse mode, wherein the precursor source sequentially and alternately generates chemical adsorption reaction on the surface of the substrate in the reaction chamber 2, redundant precursor sources and reaction byproducts are discharged from the gas outlet channel of the reaction chamber 2 after purging is finished, the sequential pulse introduction into the precursor source is repeated to finish the surface self-limiting chemical adsorption reaction, and a film layer with accurate thickness is obtained by controlling the repetition times, so that the ALD processing of the substrate is finished.

Finally, it should be noted that the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention has been described in detail with reference to examples, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, which should be covered by the claims of the present invention.

Claims

1. An ALD processing apparatus, characterized in that the processing apparatus comprises:

2. The ALD processing apparatus of claim 1, wherein the gas inlet passage is hole-shaped, the gas inlet passage is provided in plurality, and the plurality of gas inlet passages are provided at one side of a bottom of the reaction chamber;

3. The ALD processing apparatus of claim 2, wherein the gas inlet passages are provided in a plurality of sets, the plurality of sets of gas inlet passages being arranged in series along a second direction, each set of gas inlet passages having an arc shape, the diameter of each gas inlet passage of each set of gas inlet passages decreasing in series toward a direction near a center line of the bottom of the reaction chamber;

4. The ALD processing apparatus of claim 1, wherein a transfer chamber is fixedly disposed at a bottom of the reaction chamber, a top of the transfer chamber is open, a bottom of the reaction chamber covers a top of the transfer chamber, two partition plates are disposed in the transfer chamber, the two partition plates divide the transfer chamber into a first chamber, a second chamber and a third chamber along a second direction, the gas inlet channel is communicated with the first chamber, the gas outlet channel is communicated with the third chamber, a gas inlet main hole is disposed at the bottom of the first chamber, and a gas outlet main hole is disposed at a bottom of the third chamber.

5. The ALD processing apparatus of claim 1, wherein the reaction chamber and the vacuum chamber are each provided with an evacuated aperture.

6. The ALD processing apparatus of claim 1, wherein two gas distribution plates are disposed inside the reaction chamber, the two gas distribution plates being disposed opposite to each other with respect to a bottom center line of the reaction chamber, the two gas distribution plates being disposed between the gas inlet channel and the gas outlet channel, the two gas distribution plates dividing the reaction chamber into a gas inlet chamber, a reaction chamber, and a gas outlet chamber along the second direction, each gas distribution plate having a plurality of through holes disposed thereon;

7. The ALD processing device of claim 1, wherein the output end of the conveying mechanism is linearly movable back and forth in the direction of the second port, the second sealing door is disposed at the output end of the conveying mechanism, and the first sealing door is fixedly connected to a side of the second sealing door facing away from the conveying mechanism through a connecting member.

8. The ALD processing apparatus of claim 7, wherein a side of the first sealing gate facing the second sealing gate is provided with a first heater;

9. The ALD processing apparatus of claim 8, wherein a first heat reflecting assembly is disposed between the first heater and the second sealing door;

10. An ALD process, characterized in that it is carried out on the basis of a process apparatus according to any one of claims 1 to 9, comprising:

providing a substrate, placing the provided substrate on a support;

vacuumizing the vacuum chamber and the reaction chamber for disposal;