KR101388224B1 - Deposition apparatus providing direct palsma - Google Patents

Abstract

A deposition apparatus capable of improving the quality of a thin film by using an atomic layer deposition process and providing a direct plasma is disclosed. In the deposition apparatus for providing a direct plasma, a gas injection unit for providing a deposition gas to a substrate, a precursor gas providing unit for providing a precursor gas to the substrate and a purge gas to the substrate, an electrode is provided, the precursor It is provided adjacent to the gas providing unit is configured to include a pair of purge gas providing provided spaced apart from each other. Here, a reactance gas is provided between the pair of purge gas providing units, excited by the electrode in a plasma state, and provided to the substrate.

Description

Direct Plasma Formation Deposition Apparatus {DEPOSITION APPARATUS PROVIDING DIRECT PALSMA}

The present invention relates to a deposition apparatus, and to provide a direct plasma forming deposition apparatus for depositing a thin film by providing a direct plasma to the substrate.

In general, in order to deposit a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or a glass substrate, physical vapor deposition (PVD) using physical collision such as sputtering and chemical vapor deposition (chemical vapor deposition), or the like.

As the design rule of the semiconductor device is drastically fine, a thin film of a fine pattern is required, and the step of the region where the thin film is formed is also very large. Accordingly, the use of atomic layer deposition (ALD), which is capable of forming a very fine pattern of atomic layer thickness very uniformly and has excellent step coverage, has been increasing.

The atomic layer deposition method (ALD) is similar to the general chemical vapor deposition method in that it uses chemical reactions between gas molecules. However, unlike conventional chemical vapor deposition (CVD) methods injecting a plurality of gas molecules into the process chamber at the same time to deposit a reaction product generated on the substrate onto the substrate, atomic layer deposition method is a process chamber to deposit a single gaseous material It is different in that it is injected into and then purged to leave only the gas that is physically adsorbed on the surface of the heated substrate, followed by the deposition of other gaseous materials to deposit the chemical reaction product generated on the substrate surface. The thin film implemented through such an atomic layer deposition method has a very good step coverage characteristics and has the advantage that it is possible to implement a pure thin film with a low impurity content. On the other hand, the conventional atomic layer deposition method has a problem that the deposition time is long and productivity is low because the reactivity of the precursor gas is low.

According to embodiments of the present invention to improve the quality of the thin film by using an atomic layer deposition process in the deposition apparatus, and to provide a deposition apparatus that can improve the quality of the thin film by providing a direct plasma.

In the deposition apparatus for providing a direct plasma according to the embodiments of the present invention described above, the gas injection unit for providing a deposition gas to a substrate, a precursor gas providing unit for providing a precursor gas to the substrate and the precursor gas providing unit and And a purge gas providing unit provided adjacent to the substrate and configured to provide a purge gas to the substrate for generating a plasma and to provide an electrode for generating the plasma. Here, a reactance gas is provided between the electrodes of the purge gas providing unit and excited in a plasma state to be provided to the substrate.

According to one side, the purge gas providing unit is provided with a ground electrode that is connected to the ground and the power electrode to which the AC power is applied, the plasma generated by providing the reactant gas between the power electrode and the ground electrode to the substrate A space between the power supply electrode and the ground electrode is open to the substrate to provide. The purge gas providing unit includes a purge gas housing that forms a flow path for providing the purge gas to the substrate, and the power electrode and the ground electrode are provided inside the purge gas housing. In addition, the power electrode and the ground electrode are provided in parallel to be spaced apart from each other in the purge gas housing in parallel, a plasma is formed in the space between the power electrode and the ground electrode, the power electrode and the ground electrode outside A flow path for providing the purge gas in the space of is formed. For example, the purge gas housing is formed of a dielectric material.

According to one side, the precursor gas providing unit is provided with an exhaust for sucking and exhausting the exhaust gas on the substrate, the precursor gas providing unit is formed in a double tube form, the precursor gas through the inner housing to the substrate It is provided, through the outer housing is provided with the exhaust portion for sucking and exhausting the exhaust gas. Here, a precursor gas buffer part for providing the precursor gas is formed in the inner housing, and the inner housing passes through the outer housing to provide a precursor gas in the inner housing to the substrate. Gas injection holes are formed. The exhaust part may include a plurality of exhaust holes formed through the outer housing and an exhaust buffer part providing a flow path of the exhaust gas sucked through the exhaust hole into a space between the inner housing and the outer housing. For example, the outer housing is formed of a ceramic material. In addition, the precursor gas providing unit may have a cross-sectional shape of any one of a circle, a quadrangle or a polygon in the cross section of the inner and outer housings.

On the other hand, in the deposition apparatus for providing a direct plasma according to another embodiment of the present invention described above, the gas injection unit for providing a deposition gas to the substrate, the precursor gas providing unit for providing a precursor gas to the substrate and the purge to the substrate Providing a gas, provided adjacent to the precursor gas providing unit spaced apart from each other by a predetermined interval, and comprises a pair of purge gas providing unit each provided with an electrode. Here, a reactance gas is provided between the pair of purge gas providing units, excited by the electrode in a plasma state, and provided to the substrate.

According to one side, the one purge gas providing unit is provided with a power electrode to which AC power is applied, the other purge gas providing unit is provided with a ground electrode connected to the ground. The power supply electrode and the ground electrode may be provided on surfaces facing each other in the purge gas housing, or may be provided in the entire purge gas housing.

On the other hand, the deposition apparatus for providing a direct plasma according to the embodiments of the present invention, the substrate transfer unit for transferring a substrate and the substrate transfer unit is provided on the substrate to the precursor gas, reactance gas and purge gas It is configured to include a gas injection unit for providing a deposition gas containing. Here, the gas injection unit is provided adjacent to the precursor gas providing unit for providing a precursor gas to the substrate and the precursor gas providing unit, provides a purge gas to the substrate for generating a plasma, and generates a plasma And a purge gas providing unit provided with a reactant gas between the electrodes and excited in a plasma state to be provided to the substrate.

According to one side, a substrate transfer unit for supporting and transporting the substrate is provided, the substrate transfer unit transfers the substrate in one direction or reciprocating in both directions along the direction in which the gas injection unit is disposed.

On the other hand, the deposition apparatus for providing a direct plasma according to the embodiments of the present invention, the substrate transfer unit for transferring a substrate and the substrate transfer unit is provided on the substrate to the precursor gas, reactance gas and purge gas It is configured to include a gas injection unit for providing a deposition gas containing. Here, the gas injection unit is provided between the precursor gas providing unit for providing the precursor gas to the substrate and the pair of precursor gas providing units and spaced apart from each other by a predetermined interval to provide the purge gas to the substrate. The reactance gas is provided between the pair of purge gas providing units provided with electrodes and the electrodes provided in the pair of purge gas providing units, and the reactance gas is excited between the electrodes in a plasma state. And a plasma forming portion provided to the substrate.

According to one side, the pair of precursor gas providing unit and the pair of purge gas providing unit is provided symmetrically with the plasma forming portion therebetween, the pair of precursor gas providing unit and the pair of purge And a gas injection module including a gas providing unit and the plasma forming unit, wherein the gas injection unit includes one or a plurality of gas injection modules.

As described above, according to embodiments of the present invention, by using an atomic layer deposition process in the deposition apparatus, it is possible to improve the quality of the thin film by providing a direct plasma.

1 is a schematic diagram of a direct plasma providing deposition apparatus according to an embodiment of the present invention.
FIG. 2 is a schematic diagram illustrating a main part of a gas injection module in the deposition apparatus of FIG. 1.
3 is a schematic view showing a modified embodiment of the gas injection module of FIG.
4 is a schematic view showing a modified embodiment of the gas injection module of FIG.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited to or limited by the embodiments. In describing the present invention, a detailed description of well-known functions or constructions may be omitted for clarity of the present invention.

Hereinafter, the deposition apparatus 100 according to the embodiments of the present invention will be described in detail with reference to FIGS. 1 to 4. For reference, FIG. 1 is a schematic view for explaining an example of a direct plasma providing deposition apparatus 100 according to an embodiment of the present invention, Figure 2 is a gas injection module 120 in the deposition apparatus 100 of FIG. The principal part schematic diagram for demonstrating the structure and operation | movement of). 3 is a schematic diagram illustrating an embodiment in which an electrode is modified in the gas injection module 120 of FIG. 2. 4 is a schematic view for explaining the structure and operation of the modified embodiment of the gas injection module 120 of FIG.

Referring to the drawings, the deposition apparatus 100 is provided on the substrate 10 to provide different types of deposition gas, and comprises a gas injection unit 102 to provide a direct plasma. Here, the substrate 10 is mounted on the substrate transfer unit 101 and transferred in one direction to perform a deposition process. As the substrate 10 is transferred in one direction, a predetermined thin film is formed on the substrate 10 according to the atomic layer deposition process as the deposition gas provided from the gas injection unit 102 is sequentially passed.

The substrate transfer unit 101 is a means for transferring the substrate 10 in one direction or in both directions, as indicated by arrows in the drawing, and may be, for example, a roller. However, the present invention is not limited thereto, and the substrate transfer unit 101 may use various means for transferring the substrate 10 in one direction or in both directions.

In the present embodiment, the substrate 10 to be deposited may be a transparent substrate 10 including glass used for a flat panel display device such as a liquid crystal display (LCD) and a plasma display panel (PDP). However, the present invention is not limited thereto, and the substrate 10 may be a silicon wafer. In addition, the substrate 10 may have various shapes such as a rectangle or a circle.

On the other hand, the detailed technical configuration of the component except for the gas injection unit 102 in the atomic layer deposition apparatus 100 can be understood from a known technique and are not the gist of the present invention, so the detailed description and illustration are omitted and the main components are omitted. Only briefly explain.

In addition, in the present embodiment, the 'deposition gas' includes at least one gas provided to deposit a thin film on the substrate 10, and a precursor gas including a constituent material of the thin film to be formed on the substrate 10. (precursor gas) S, a reactance gas R chemically reacting with the precursor gas, and a purge gas P for purging the precursor gas and the reactant gas. . In the drawings, 'exhaust gas' is denoted by V. FIG. In addition, the direct plasma of the reactance gas provided by being plasmaized by the plasma forming unit 250 is represented by R *.

The gas injection unit 102 includes a gas injection module composed of portions 210, 220, 230, and 240 that provide respective deposition gases, and a plasma forming unit 250 that generates plasma and provides the plasma to the substrate 10. 120). The gas injection unit 102 includes a gas injection module in which a pair of precursor gas providing units 210 and 230, a pair of purge gas providing units 220 and 240, and a plasma forming unit 250 are modularized into one unit. It consists of 120. And the gas injection unit 102 is composed of one or a plurality of modular gas injection module 120, the configuration of the gas injection unit 102 may be changed depending on the size and process of the substrate 10.

However, the present invention is not limited to the drawings, and the gas injection unit 102 and the gas injection module 120 may be formed in different forms depending on the type and number of deposition gases provided.

The plasma forming unit 250 excites the reactance gas R in a plasma state, and provides plasma particles, such as ions, to the substrate 10 including radicals that are neutral particles. In the present embodiment, providing all of the plasma particles generated on the substrate 10 in the plasma forming unit 250 is referred to as 'direct plasma'.

The gas injection module 120 has a deposition gas S, a purge gas P, a reactance gas R *, and a purge gas P deposited on the substrate 10 as the substrate 10 is transferred in one direction. Precursor gas providing unit 210, purge gas providing unit 220, the plasma forming unit 250, the purge gas providing unit 230 and the precursor provided with the reactance gas (R) to be provided in the order of The gas providing unit 240 is arranged in order. Here, the reactant gas is excited in a plasma state while passing through the plasma forming unit 250 and provided in the direct plasma state R *. In addition, the gas injection module 120 includes a precursor gas providing unit 210 and 230 and a purge gas providing unit 220 and 240 around the plasma forming unit 250.

On the other hand, the substrate transfer unit 101 can transfer or reciprocally transfer the substrate 10 in one direction. That is, in the gas injection module 120, the precursor gas providing units 210 and 230 and the purge gas providing units 220 and 240 are disposed symmetrically with each other, so that the substrate transfer unit 101 moves the substrate 10 to the gas injection module. As the reciprocating transfer from one end of the 120 to the other end, the thin film is deposited while the deposition gas is repeatedly provided in sequence in the deposition order on the substrate 10.

The precursor gas providing parts 210 and 230 and the purge gas providing parts 220 and 240 have a tubular shape having a cross-sectional shape such as a polygon, a circular shape, or a polygonal cross section, and a length corresponding to the length of the substrate 10. And may be arranged in parallel with each other. In addition, a plurality of precursors are provided at the lower portions of the precursor gas providing parts 210 and 230 and the purge gas providing parts 220 and 240 toward the substrate 10 to provide the precursor gas S and the purge gas P, respectively. As a result, gas injection holes 212 and 232 and purge gas injection holes 222 and 242 are formed. Here, the precursor gas injection holes 212 and 232 and the purge gas injection holes 222 and 242 may be holes, slits or openings.

Meanwhile, in the above-described embodiments, the precursor gas providing units 210 and 230 and the purge gas providing units 220 and 240 are illustrated as having a tubular shape having a rectangular cross section, but the present invention is limited by the drawings. The shapes of the precursor gas providing parts 210 and 230 and the purge gas providing parts 220 and 240 may be changed in various ways.

In addition, the precursor gas supply units 210 and 230 and the purge gas providing units 220 and 240 respectively provide a precursor gas supply source 131 for providing the precursor gas S and a purge gas for providing the purge gas P. The gas source 133 is connected, and the reactant gas source 135 that provides the reactance gas R is connected to the plasma forming unit 250. Each of the sources 131, 133, and 135 is called a gas supply unit 103.

The purge gas providing units 220 and 240 serve to provide a purge gas P and serve as electrodes for forming plasma in the plasma forming unit 250.

In detail, the purge gas providing units 220 and 240 are spaced apart from each other by a predetermined interval, and when the reactance gas R is injected into the electric field generated between the provided electrodes, the purge gas providing units 220 and 240 are excited in a plasma state and are provided to the substrate 10. That is, the space between the purge gas providing units 220 and 240 becomes the plasma forming unit 250.

The purge gas providing units 220 and 240 include purge gas housings 221 and 241 which form a flow path for providing the purge gas P to the substrate, and form a plasma inside the purge gas housings 221 and 241. The power supply electrode 225 and the ground electrode 245 are provided. For example, as shown in FIG. 2, one purge gas providing unit 220 is provided with a power electrode 225 to which an AC power source 141 is connected, and the other purge gas providing unit 240 is provided in the other purge gas providing unit 240. The ground electrode 245 to which the ground power source 143 is connected is provided. In the drawing, reference numeral 104 denotes a power supply 104 including an AC power source 141 and a ground power source 143.

The purge gas housings 221 and 241 are formed of a dielectric material to prevent arc discharge from occurring during plasma generation, and the power electrode 225 and the ground electrode 245 in the purge gas buffer parts 223 and 243 therein. ) Is provided. In addition, the power source electrode 225 and the ground electrode 245 are formed to form an electric field parallel to the plasma forming unit 250. For example, the power electrode 225 and the ground electrode 245 may be provided on the entire inner wall of the purge gas housings 221 and 241.

However, the present invention is not limited by the drawings, and the power supply electrode 225 and the ground electrode 245 may be substantially changed in arrangement and shape so as to form an electric field parallel to the inside of the plasma forming unit 250. Can be.

For example, as shown in FIG. 3, the power electrode 225 and the ground electrode 245 may be formed in a plate shape and may be provided on wall surfaces facing each other in the purge gas housings 221 and 241. Here, the size of the power electrode 225 and the ground electrode 245 may have a variety of sizes and shapes as long as it can form an electric field parallel to the plasma forming unit 250, the thickness of the purge gas housing 221 , 241 is formed to a thickness that can be provided inside.

The precursor gas providing units 210 and 230 may have a double pipe shape to provide the precursor gas S and to discharge the exhaust gas V. In detail, the precursor gas providing parts 210 and 230 are concentrically spaced apart from the inner housings 211 and 231 forming the flow path of the precursor gas S and the inner housings 211 and 231 at regular intervals. And outer housings 215 and 235 which form a flow path for discharging the exhaust gas V. That is, the inner spaces of the inner housings 211 and 231 become the precursor gas buffer parts 213 and 233 for the flow of the precursor gas S, and the inner housings 211 and 231 and the outer housings 215 and 235. The space between the exhaust buffers 217 and 237 for the flow of the exhaust gas V is provided. The inner housings 211 and 231 protrude from the inner housings 211 and 231 toward the outer housings 215 and 235 so as to provide the internal precursor gas S to the substrate 10 so that the outer housing 215 may be provided. One or more precursor gas injection holes 212 and 232 formed through the 235 are formed. For example, the precursor gas injection holes 212 and 232 may be a plurality of holes or slits or openings.

In the outer housings 215 and 235, one or a plurality of exhaust holes 216 and 236 are formed in the lower portion facing the substrate 10 to suck the exhaust gas V from the upper portion of the substrate 10. The exhaust gas V sucked in the exhaust holes 216 and 236 is discharged to the outside through the exhaust buffers 217 and 237. In this manner, the exhaust holes 216 and 236 and the exhaust buffer parts 217 and 237 are called exhaust parts.

Here, the outer housings 215 and 235 are formed of a material that does not generate an arc discharge during plasma discharge, for example, is formed of a ceramic material.

Meanwhile, in the above-described embodiments, a pair of precursor gas providing units 210 and 230 and a pair of purge gas providing units 220 and 240 are provided, but the precursor gas providing unit and the purge gas providing unit are each one. It is also possible to be provided.

For example, as shown in FIG. 4, the gas injection module 320 may be composed of one precursor gas providing unit 410 and one purge gas providing unit 420 instead of a pair of providing units. have. And the gas injection unit 102 may be composed of one or a plurality of gas injection module (320).

4 is substantially the same as the above-described embodiments except for the number of the precursor gas providing unit 410 and the number of the purge gas providing unit 420, and the same components are the same. Names are used and duplicate descriptions are omitted.

The precursor gas providing unit 410 exhausts the exhaust gas V from the substrate 10 at the same time as the precursor gas buffer unit 411 for injecting the precursor gas S as in the above-described embodiment. The buffer unit 417 may be formed in a double tube shape. The precursor gas providing unit 410 may include an inner housing 411 forming the precursor gas buffer unit 413 for providing the precursor gas S and an exhaust buffer unit forming the discharge flow path of the exhaust gas V ( It has a double tube form of the outer housing 415 forming 417. A plurality of precursor gas injection holes 412 are formed in the inner housing 411 to inject the precursor gas S, and one or a plurality of exhaust holes 416 are formed in the outer housing 415 to suck the exhaust gas. ) Is formed.

The purge gas providing unit 420 is formed of a purge gas housing 421 in which one or a plurality of purge gas injection holes 422 are formed to provide the purge gas P to the substrate 10. In addition, a power electrode 425 and a ground electrode 426 are disposed in parallel in the inner space of the purge gas housing 421 so as to form a direct plasma R *, and between the power electrode 425 and the ground electrode 426. An opening 428 of a predetermined size is formed to provide the plasma formed in the substrate 10. For example, the power supply electrode 425 and the ground electrode 426 have a plate shape and are vertically erected in the purge gas housing 421 and disposed in parallel to be spaced apart from each other by a predetermined interval. When the reactance gas R is provided to the space 427 between the power supply electrode 425 and the ground electrode 426 arranged in parallel, a parallel electric field generated between the power supply electrode 425 and the ground electrode 426 is applied. It is excited in a plasma state, and a direct plasma R * is provided to the lower substrate 10. The opening 428 is formed to a size sufficient to provide the plasma particles to the substrate 10 so as to provide the direct plasma R *. On the other hand, the size and shape of the opening 428 is not limited by the drawings and may be changed in various ways.

The purge gas providing unit 420 has a plasma forming space between the power electrode 425 and the ground electrode 426 in the space inside the purge gas housing 421 by the power electrode 425 and the ground electrode 426. 425 and a purge gas buffer unit 423 which serves as a flow path for providing the purge gas P outside the ground electrode 426. In addition, the power supply electrode 425 and the ground electrode 426 may be provided in an airtight manner to prevent the plasma from flowing into the purge gas buffer unit 423. Although not shown, a dielectric material may be provided on the surface of the power electrode 425 and the ground electrode 426 facing the plasma formation space so as to prevent the arc discharge from occurring.

According to this embodiment, by providing a direct plasma to improve the reactivity of the deposition gas it is possible to improve the deposition rate and film quality. In addition, since not only neutral radical particles but also positive and negative ion particles are provided to the direct plasma, it is possible to provide a plasma such as oxygen (O 2), nitrogen (N 2), ammonia (NH 3), or the like. In addition, this can effectively improve the quality of the reduced thin film.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The present invention is not limited to the above-described embodiments, and various modifications and changes may be made thereto by those skilled in the art to which the present invention belongs. Therefore, the spirit of the present invention should not be construed as being limited to the above-described embodiments, and all of the equivalents or equivalents of the claims, as well as the following claims, are included in the scope of the present invention.

10: substrate
100: deposition apparatus
101: substrate transfer unit
102: gas injection unit
103: gas supply unit
104: power supply
120: gas injection unit
131: precursor gas source
133: purge gas source
135: reactance gas source
141: AC power
143: ground power
210, 230: precursor gas providing unit
211, 231: inner housing
212, 232: precursor gas injection holes
213 and 233: precursor gas buffer
215, 235: outer housing
216, 236: exhaust hole
217 and 237: exhaust buffer unit
220, 240: purge gas providing unit
221, 241: purge gas housing
222, 242: purge gas injection hole
223 and 243: purge gas buffer unit
225: power electrode
245 ground electrode
220, 240: purge gas providing unit
250: plasma forming unit

Claims (17)

In the gas injection unit for providing a deposition gas to the substrate in the deposition apparatus,
It is formed in the form of a double tube of a precursor gas buffer portion for providing a precursor gas therein is provided with an inner housing for providing a precursor gas to the substrate and an outer housing having an exhaust portion for sucking and exhausting the exhaust gas on the substrate. A precursor gas providing unit formed with a precursor gas injection hole through the inner housing and the outer housing to provide the precursor gas inside the precursor gas buffer unit to the substrate; And
A purge provided adjacent to the precursor gas providing unit and provided with a purge gas to the substrate and generating a plasma, and a reactance gas provided between the electrodes to be excited in a plasma state to provide the purge gas to the substrate. A gas providing unit;
Gas injection unit of the direct plasma forming deposition apparatus comprising a.
The method of claim 1,
The purge gas providing unit includes a power supply electrode to which an AC power is applied and a ground electrode to which a ground is connected,
The gas of the direct plasma forming deposition apparatus in which a space between the power supply electrode and the ground electrode is opened with respect to the substrate so that the reactant gas is provided between the power supply electrode and the ground electrode to provide the plasma generated to the substrate. Jet.
3. The method of claim 2,
The purge gas providing unit includes a purge gas housing that forms a flow path for providing the purge gas to the substrate,
And the power supply electrode and the ground electrode are provided inside the purge gas housing.
The method of claim 3,
The power supply electrode and the ground electrode are provided in parallel to be spaced apart from each other in the purge gas housing,
Plasma is formed in the space between the power supply electrode and the ground electrode,
And a gas injection unit of a direct plasma forming deposition apparatus having a flow path for providing the purge gas in a space outside the power supply electrode and the ground electrode.
The method of claim 3,
The purge gas housing is a gas injection unit of the direct plasma forming deposition apparatus is formed of a dielectric material.
delete delete The method of claim 1,
The exhaust portion of the direct plasma forming deposition apparatus is formed of a plurality of exhaust holes formed through the outer housing and the exhaust buffer portion for providing a flow path of the exhaust gas sucked in the exhaust hole to the space between the inner housing and the outer housing. Gas injection unit.
The method of claim 1,
The outer housing is a gas injection part of the direct plasma forming deposition apparatus is formed of a ceramic material.
The method of claim 1,
The precursor gas providing part is a gas injection part of a direct plasma forming deposition apparatus having a cross-sectional shape of any one of a circle, a quadrangle, and a polygon in a cross section of the inner and outer housings.
In the gas injection unit for providing a deposition gas to the substrate in the deposition apparatus,
It is formed in the form of a double tube of a precursor gas buffer portion for providing a precursor gas therein is provided with an inner housing for providing a precursor gas to the substrate and an outer housing having an exhaust portion for sucking and exhausting the exhaust gas on the substrate. A pair of precursor gas providing units formed with a precursor gas injection hole for providing the precursor gas in the precursor gas buffer unit to the substrate through the inner housing and the outer housing; And
A pair of purge gas providing units configured to provide a purge gas to the substrate and to be spaced apart from each other, provided between the pair of precursor gas providing units;
Lt; / RTI >
And a reactant gas provided between the pair of purge gas providing units, excited by a plasma state by the electrode, and provided to the substrate.
12. The method of claim 11,
And a power supply electrode to which AC power is applied to the one purge gas providing part, and a ground electrode to which the ground is connected to the other purge gas providing part.
The method of claim 12,
The power supply electrode and the ground electrode is provided on the surface facing each other in the purge gas housing, or the gas injection unit of the direct plasma forming deposition apparatus is provided in the entire interior of the purge gas housing.
In the vapor deposition apparatus,
A substrate transfer unit for transferring a substrate; And
A gas injection unit provided on the substrate transfer unit to provide a deposition gas including a precursor gas, a reactance gas, and a purge gas to the substrate;
Lt; / RTI >
The gas-
It is formed in the form of a double tube of a precursor gas buffer portion for providing a precursor gas therein is provided with an inner housing for providing a precursor gas to the substrate and an outer housing having an exhaust portion for sucking and exhausting the exhaust gas on the substrate. A precursor gas providing unit formed with a precursor gas injection hole through the inner housing and the outer housing to provide the precursor gas inside the precursor gas buffer unit to the substrate; And
A purge provided adjacent to the precursor gas providing unit and provided with a purge gas to the substrate and generating a plasma, and a reactance gas provided between the electrodes to be excited in a plasma state to provide the purge gas to the substrate. A gas providing unit;
Direct plasma forming deposition apparatus comprising a.
15. The method of claim 14,
A substrate transfer unit for supporting and transporting the substrate is provided,
And the substrate transfer unit transfers the substrate in one direction or reciprocally in both directions along the direction in which the gas injection unit is disposed.
In the vapor deposition apparatus,
A substrate transfer unit for transferring a substrate; And
A gas injection unit provided on the substrate transfer unit to provide a deposition gas including a precursor gas, a reactance gas, and a purge gas to the substrate;
Lt; / RTI >
The gas-
It is formed in the form of a double tube of a precursor gas buffer portion for providing a precursor gas therein is provided with an inner housing for providing a precursor gas to the substrate and an outer housing having an exhaust portion for sucking and exhausting the exhaust gas on the substrate. A pair of precursor gas providing units formed with a precursor gas injection hole for providing the precursor gas in the precursor gas buffer unit to the substrate through the inner housing and the outer housing;
A pair of purge gas providing units provided between the pair of precursor gas providing units and spaced apart from each other to provide the purge gas to the substrate, and each electrode having an electrode; And
A plasma forming unit configured to provide the reactance gas between electrodes provided in the pair of purge gas providing units to excite the reactance gas into a plasma state between the electrodes and provide the reactant gas to the substrate;
Direct plasma forming deposition apparatus comprising a.
17. The method of claim 16,
The pair of precursor gas providing units and the pair of purge gas providing units are provided symmetrically with the plasma forming unit therebetween, the pair of precursor gas providing units and the pair of purge gas providing units, and Including a gas injection module consisting of a plasma forming unit,
The gas injection unit is a direct plasma forming deposition apparatus having one or a plurality of gas injection module.

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