200932945 九、發明說明 【發明所屬之技術領域】 本發明係關於用以對基板淋浴狀供給處理氣體之氣體 供給裝置。 【先前技術】 半導體製造裝置中，有使氣體供給裝置和載置台對向 Φ 於處理容器內，自氣體供給裝置將處理氣體以淋浴狀供給 至載置台上之基板而處理基板之裝置，例如成膜裝置或餓 刻裝置等。 作爲其中成膜裝置則有加熱處理氣體使予以反應的熱 CVD等，再者，所知的有例如將多數種類之處理氣體供給 分爲兩階段，在第1步驟執行一種處理氣體之供給，再者 ，在第2步驟執行其他處理氣體之供給，交互執行該些步 驟，循序疊層藉由處理氣體所產生之反應生成物（薄膜） • ，即所謂的 ALD ( Atomic Layer Deposition )。針對該 ALD雖然所知的有自基板之橫側流入處理氣體之側流方式 ，但是本發明者構想即使在該ALD中也使用與基板對向 之氣體供給裝置之方式更爲有利。 該氣體供給裝置被稱爲氣體噴淋頭等，在具備有氣體 導入淖之氣體供給裝置本體之最下部，設置有形成多數氣 體供給孔之被稱爲噴淋板等之氣體供給板。氣體供給裝置 本體具備用以連通氣體導入埠和對應於此之氣體供給孔之 氣體流路，在氣體流路之途中，形成有用以使氣體擴散至 200932945 橫方向之擴散空間，例如藉由ALD執行成膜之類型的氣 體供給裝置，係構成可以自各不同之氣體供給孔供給在各 步驟所供給之處理氣體。 在該ALD中，於切換自氣體噴淋頭所供給之處理氣 體之種類時，執行於開始下一次處理氣體供給之前供給沖 洗氣體，並完全排除殘留在執行成膜之處理環境內之處理 氣體的作業。在如此沖洗作業所執行之ALD用之氣體噴 ❹ 淋頭中，本發明者硏究針對氣體噴淋頭之中央區域，當作 執行處理氣體及沖洗氣體之供給的區域，並且藉由將周緣 區域設爲執行沖洗氣體之供給的區域，自合倂中央區域和 周緣區域之氣體噴淋頭全體供給多數沖洗氣體，縮短沖洗 之作業時間，並提高成膜裝置之處理量。 另外，在氣體供給裝置中，噴淋頭之構成因應處理體 之種類而被調整。例如，當觀看氣體供給孔之孔徑或長度 (深度）時，爲了防止自一氣體供給孔被供給至處理容器 φ 內之一處理氣體擴散侵入至鄰接於該氣體供給孔之其他處 理氣體用之氣體供給孔，且處理氣體彼此在氣體流路或擴 散空間反應而使反應物附著進而產生顆粒，於使用容易擴 散之氣體之時，必須進行縮小氣體供給孔之尺寸或增大其 長度等之調整。再者，不僅限於處理氣體之氣體供給孔， 爲了調整例如沖洗效率，有時也變更沖洗氣體之供給孔。 並且，並不限定實際處理製品之晶圓之情形，在裝置 之開發階段中，即使於得到合適於製程處理程式之氣體供 給孔之孔徑或長度之時，亦有實際組裝裝置而變更各種氣 -5- 200932945 體供給孔之孔徑或長度之情形。 於此時，於按例如變更處理氣體之種類，變更氣體供 給孔之時，僅交換噴淋板係應比交換氣體噴淋頭全體，在 成本上較爲有利。 但是，噴淋板之製作必須對例如直徑1〜2mm左右之 微細的多數氣體供給孔高精度加工位置以及孔徑。然後， 由於晶圓大口徑化，故噴淋板也成爲大型化，並非容易對 Λ 大面積之平板上施予如此高精度之加工，製作費用也高漲 ❹ 〇 然後，如上述般，例如從中央區域供給處理氣體，再 者從周緣區域供給沖洗氣體之時，即使變更處理氣體之氣 體供給孔之時，也必須對噴淋板加工沖洗氣體之氣體供給 孔，再者，相反地即使於變更沖洗氣體之氣體供給孔之時 ，也必須加工處理氣體之氣體供給孔，有對於應調整之氣 體供給孔以外之氣體供給孔也必須要施予加工之浪費情形 Q ，其結果妨礙開發成本、流動成本的低價化。 並且，雖然所知的有在蝕刻裝置中，自中央區域和周 緣區域供給之蝕刻氣體的氣體種類或流量互相不同之氣體 噴淋頭（參照日本特開2006- 1 65 3 99號公報之第003 7段 落至第0039段落及第3圖），但是即使在如此之氣體噴 淋頭中，變更中央區域、周緣區域之一方之氣體供給孔之 時，同樣也有浪費之情形。並且，於該日本特開2006-1 65 3 99號公報中，針對消除如此浪費情形之技術也無記載 200932945 【發明內容】 本發明係鑑於如此之情形而所創作出者，其目的在於 對基板淋浴狀供給氣體之氣體供給裝置，提供可以以交換 一部份之零件對應變更處理氣體之種類及流量，而且在製 作交換零件上爲有利之氣體供給裝置。本發明之其他目的 .在於提供該氣體供給裝置。 @ 藉由本發明之氣體供給裝置具備氣體供給裝置本體， 該氣體供給裝置本體具有導入處理氣體之多數導入埠、導 引自該多數導入埠所導入之處理氣體的氣體流路；和 氣體供給板，此被配置成與載置在處理容器內之載置 台之基板對向，具有連通於上述氣體流路而將被該氣體流 路所導引之處理氣體供給至上述基板的多數氣體供給孔， 上述氣體供給板具有： 第1氣體供給板，包含有多數氣體供給孔，用以供給 Φ 互相不同之多數之處理氣體；和 第2氣體供給板，包含有多數氣體供給孔， 上述第1氣體供給板係被設置成對上述氣體供給裝置 本體裝卸自如。 在藉由本發明之氣體供給裝置中，上述第2氣體供給 板係被設置成對上述氣體供給裝置本體裝卸自如爲佳。 在藉由本發明之氣體供給裝置中， 上述基板爲半導體晶圓， 上述氣體供給板在徑方向被分割，被分割之一方的部 200932945 位構成上述第1氣體供給板，另一方之部分構成上述第2 氣體供給板爲佳。 在藉由本發明之氣體供給裝置中， 上述第1氣體供給板係被設置在上述氣體供給裝置本 體之下面區域之中央部， 上述第2氣體供給板係由環狀所構成，包圍上述第1 氣體供給板之周緣外方而被加以設置爲佳。 _ 在藉由本發明之氣體供給裝置中， 〇 上述第2氣體供給板之上述多數氣體供給孔以僅供給 沖洗氣體爲佳。 在藉由本發明之氣體供給裝置中， 上述導入埠具有導入第1處理氣體之第1導入埠，和 導入第2處理氣體之第2導入埠，和導入第3處理氣體之 第3導入埠， 上述第1氣體供給板之上述多數之氣體供給孔具有將 Φ 在上述第1導入埠所導入之上述第1處理氣體供給至上述 基板之第1氣體供給孔，和將在上述第2導入埠所導入之 上述第2處理氣體供給至上述基板之第2氣體供給孔，和 將在上述第3導入埠所導入之上述第3處理氣體供給至上 述基板之第3氣體供給孔， 上述第1處理氣體、上述第2處理氣體及上述第3處 理氣體之各個係以由互相不同之種類所構成爲佳。 在藉由本發明之氣體供給裝置中， 上述第1氣體供給孔和上述第2氣體供給孔和上述第 -8 - 200932945 3氣體供給孔互相供給處理氣體， 使第1處理氣體、第2處理氣體及第3處理氣體互相 反應，使得在上述基板表面疊層薄膜爲佳。 在藉由本發明之氣體供給裝置中， 上述導入埠具有導入第1處理氣體之第1導入埠，和 導入第3處理氣體之第3導入埠， 上述第1氣體供給板之上述多數之氣體供給孔具有將 φ 在上述第1導入埠所導入之上述第1處理氣體供給至上述 基板之第1氣體供給孔，和將在上述第3導入埠所導入之 上述第3處理氣體供給至上述基板之第3氣體供給孔， 上述第1處理氣體及上述第3處理氣體之各個係以由 互相不同之種類所構成爲佳。 在藉由本發明之氣體供給裝置中， 第1氣體供給板係以供給4種類以上之處理氣體爲佳 〇 φ 若藉由本發明’氣體供給板具有包含多數氣體供給孔 之第1氣體供給板，和含有多數氣體供給孔之第2氣體供 給板’用以供給與自第1氣體供給板之上述多數氣體供給 孔所供給之處理氣體不同種類之處理氣體，或是以與自上 述第1氣體供給板之上述多數氣體供給孔所供給之處理氣 體之流量不同之流量供給處理氣體，第1氣體供給板係被 設置成對上述氣體供給裝置本體裝卸自如。因此，於變更 處理氣體之種類或流量之時，或是於執行對合適於其處理 氣體之種類或流量之適當氣體供給孔求出參數之作業時， -9- 200932945 不用交換氣體供給板全體，若僅交換第1氣體供給板即可 。其結果’比起一體構成氣體供給板之情形’可以減少使 用之材料，或可以減少加工之時間，可以降低氣體供給板 之製作費用。 【實施方式】 首先，針對本發明之實施型態之成膜裝置1全體之構 Φ 成，一面參照第1圖一面予以說明。本實施型態所涉及之 成膜裝置1具備有使用例如當作第1處理氣體之含緦（Sr )的原料氣體（以下，稱爲Sr原料氣體），當作第2處 理氣體之含鈦的原料氣體（以下稱爲Ti原料氣體），使 該些與當作第3處理氣體之氧化氣體的臭氧氣體反應，藉 由ALD製程，使屬於高介電體材料之鈦酸緦（SrTi03，以 下略稱爲STO)之薄膜疊層在屬於基板之晶圓表面之功能 〇 φ 如第1圖之縱剖面圖所示般，該成膜裝置1具備有構 成真空容器的處理容器2，和被設置在該處理容器2內， 用以載置屬於基板之晶圓W之載置台3，和以與該載置台 3對向之方式被設置在處理容器2之上部，用以將處理氣 體供給至載置台3上之晶圓W表面的氣體供給裝置之氣 體噴淋頭4。 載置台3係由相當於支撐晶圓W之載置台本體之工 作台3 1，和覆蓋該工作台3 1之工作台蓋3 2所構成，工作 台31係以例如氮化鋁或石英等作爲材料，例如形成扁平 -10- 200932945 之圓板狀。在工作台31之內部藉由加熱載置台3之載 面，埋設有用以將晶圓W升溫至成膜溫度之工作台加 器33。該工作台加熱器33係藉由例如薄片狀之電阻發 體所構成，藉由電源部68供給電力，依此可以將載置 載置台3上之晶圓W加熱至例如280 °C。並且，在工作 31內設置有無圖式之靜電夾具，使可以靜電吸附被載置 載置台3上之晶圓W而加以固定。 φ 另外，與工作台31共同構成載置台3之工作台蓋 ，係具有發揮藉由覆蓋工作台31之上面及側面，防止 反應生成物或反應副生成物般之反應物堆積於工作台 表面之作用。工作台蓋32係構成例如石英製之裝卸自 之蓋構件（被稱爲附著物遮蔽等），在其上面中央區域 形成具有比晶圓W稍大之直徑的圓形凹部，可以執行 載置在該工作台蓋32上之載置面之晶圓W之定位。 載置台3係藉由柱狀支撐構件34支撐例如工作台 0 之下面側中央部，該支撐構件34被構成藉由升降機構 而升降。然後，藉由使該支撐構件34升降，載置台3 以在與外部之搬運機構之間，執行晶圓W之交接的交 位置，和執行晶圓W之處理的處理位置之間，例如最 升降8 0mm左右。 如第1圖所示般，支撐構件34係貫通處理容器2 底面部，詳細而言係貫通後述之下側容器22之底面部 連接於藉由先前所述之生降機構69而升降之升降板23 並且該升降板23和下側容器22之間係藉由波紋管24 置 熱 熱 在 台 在 32 如 3 1 如 > 被 3 1 69 可 接 長 之 ) > 而 -11 - 200932945 氣密接合。 再者，載置台3具備有用以支撐晶圓W之背面而藉 由載置台3之載置面使該晶圓W升降之例如3根升降銷 35。該些升降銷35係如第1圖所示般，在將載置台3移 動至晶圓W之處理位置的狀態下，各升降銷35之扁平頭 部在工作台31之上面被卡止，以其下端部自工作台31之 底面飛出之方式，在使工作台31上下方向貫通之狀態下 0 被安裝。 在貫通工作台31之各升降銷35之下方側，設置有環 狀之升降構件36，在使載置台3下降至晶圓W之交接位 置之狀態下，使升降構件36升降，藉由使各升降銷35上 推或下降，可以使被支撐於該些升降銷35之晶圓W自載 置台3之載置面升降。 在此，在工作台蓋32之上面側，先前所述之升降銷 35貫通之位置，設置有儲存升降銷35之頭部的開口部。 0 因此，如第1圖所示般，在使載置台3移動至晶圓W之 處理位置之狀態下，工作台蓋32上面和各升降銷35之頭 部上面幾乎成爲相同表面，在載置台3上面形成平坦之晶 圓W載置面。並且，該工作台蓋32之側壁部延伸至工作 台31之下方側，形成自側面包圍工作台31之下方區域的 裙部321，構成與工作台31本體一體的側周面。 接著，針對處理容器2之構成予以說明。本實施型態 所涉及之處理容器2爲重疊被環狀形成在扁平之碗形的下 側容器22上之排氣導管21之構成。該下側容器22係藉 -12- 200932945 由例如鋁等所構成，在其底面設置有貫通孔221，貫通先 前所述之工作台31之支撐構件34。再者，在該貫通孔 221之周圍，例如於4處設置有沖洗氣體供給路222，可 以將自沖洗氣體供給源66所供給之氮氣體等之沖洗氣體 送入至下側容器22內。並且，在第1圖中，以虛線所式 之搬運口 28爲用以執行藉由外部搬運機構執行晶圓W之 搬入搬出，藉由無圖式之閘閥而開關。 φ 排氣導管21係被構成使例如鋁製之角狀導管彎曲而 所形成之環狀體，該環狀體之內徑及外徑係被構成與先前 所述之下側容器22之側壁部223之內徑及外徑幾乎相同 尺寸。再者，當將接近於該排氣導管21之處理環境之側 的壁面稱爲內壁面，將離處理環境遠之側的壁面稱爲外壁 面時，在內壁面上端部，隔著間隔沿著周方向多數配列延 伸於橫方向之縫隙狀之真空排氣口 211。在該排氣導管21 之外壁面之例如一處連接有排氣管2 9，例如利用被連接於 _ 該排氣管29之真空泵67，則可以執行來自各真空排氣口 211之真空排氣。再者，如第1圖所示般，在排氣導管21 以從其上面側覆蓋外壁面及下面側之外周部的方式設置有 隔熱構件2 1 2。 具備有以上說明之構成的排氣導管2 1經隔熱構件2 1 2 被重疊於下側容器22上，在互相隔熱之狀態下成爲一體 ’構成處理容器2。然後，被設置在排氣導管21之內壁面 之多數真空排氣口 211因朝向包含形成在氣體噴淋頭4和 載置台3之間的處理環境10之空間而開口，故可以藉由 -13- 200932945 該些真空排氣口 211，執行處理環境10之真空排氣。 並且，在處理容器2之內部，如第1圖所示般，設置 有用以與載置台3共同動作自較載置台3上部之上部空間 區劃屬於下側容器22內之空間之下部空間的內部區塊26 。該內部區塊26爲藉由例如鋁形成之環狀構件，形成可 以裝塡於下側容器22之側壁部223內壁面和載置台3之 側周面之間的空間的尺寸。再者，在內部區塊2 6之上面 0 外周部以從該外周部擴展至外側之方式設置有突起邊262 。內部區塊26係使該突起邊262卡合於被設置在下側容 器22之側壁部223和排氣導管21之內壁兩側之下端部之 間的中間環體252而固定在處理容器2內。 並且’如第1圖所示般，自該內部區塊26之上面至 內周面之區域，被石英製之區塊蓋261覆蓋，成爲可以抑 制反應物堆積至表面。然後，當載置台3位於處理位置之 時’該區塊蓋2 6 1隔著例如2 m m之間隙包圍工作台蓋3 2 φ 之側面（裙部321之側面），依此成爲處理環境10之氣 體難以擴散至下部空間的狀態。 並且’在被形成於排氣導管21之內壁面的真空排氣 口 2 1 1和處理環境丨〇之間之環狀空間，配設有藉由縮小 該空間之流通傳導率，用以謀求自該處理環境1〇觀看使 處理容器2之周方向中之排氣均勻化，剖面形成逆l字形 之環狀構件的擋環27。 接著’針對氣體噴淋頭4予以說明。第2圖爲氣體噴 淋頭4之分解斜視圖’第3圖及第4圖爲在第2圖所示之 -14- 200932945 一點虛線之位置切割氣體噴淋頭4之縱斷斜視圖及縱剖面 圖，第3圖、第4圖從中心位置觀看時左右之切割方向爲 不同。本實施型態所涉及之氣體噴淋頭4係可以將3種類 之處理氣體的Sr原料氣體、Ti原料氣體及臭氧氣體或是 沖洗氣體從對向於載置台3上之晶圓W之中央部的中央 區域吐出至處理環境10，並且自包圍該中央區域之環狀之 周緣區域吐出沖洗氣體。然後，在該氣體噴淋頭4之中央 φ 區域，構成自各專用之氣體供給孔供給Sr原料氣體、Ti 原料氣體及臭氧氣體之所謂的後混合類型之氣體噴淋頭。 首先，當針對上述中央區域中之處理氣體之供給構造 予以敘述時，則如第3圖、第4圖所示般，在氣體噴淋頭 4之上面，設置有用以各導入Sr原料氣體、Ti原料氣體 及臭氧氣體之第1導入埠51a、第2導入埠52a及第3導 入埠53a，在該些導入埠51a〜53a，係也可以供給與上述 各種處理氣體不同之沖洗氣體。在氣體噴淋頭4之內部， φ 從上依序各互相隔著間隔疊層扁平之第1擴散空間421、 第2擴散空間422及第3擴散空間431，該些擴散空間 421〜431形成同軸之圓形狀，第3擴散空間431係構成直 徑大於第1擴散空間421及第2擴散空間422。 接著，當針對在氣體噴淋頭4上面配置各導入埠51a 〜54a予以說明時，則如第2圖所示般，第1導入埠51a 被設置在氣體噴淋頭4之上面中央部之1處，當將第2圖 所示之Y方向設爲前側時’第2導入埠52a則被設置在包 圍上述第1導入埠51a之前後左右的4處。再者，第3導 -15- 200932945 入埠53a係被設置在第2導入埠52a之外側4處，全體9 個導入埠51a〜53a十字狀被配列在氣體噴淋頭4之上面 之中央區域。再者，沖洗氣體用之第4導入埠5 4a係在該 中央區域之外側，設置有將已述之第1導入埠51a設爲中 心之對角線上之兩處。 被設置在氣體噴淋頭4之上面中央部的第1導入埠 51a經第1氣體導入路511與第1擴散空間42 1連通。氣 φ 體噴淋頭4係如後述般，4段疊層平板而構成，第1氣體 導入路511係垂直被形成在該些平板群之最上段之平板41 。再者，第2導入埠52a經第2氣體導入路521而與第2 擴散空間422連通，第3導入埠53a係經第3氣體導入路 531而與第3擴散空間431連通。第2氣體導入路521係 由上述最上段之平板41通過第1擴散空間421而垂直延 伸，因此，在第1擴散空間421，其內部空間配置有形成 第2氣體導入路521之小筒狀部42 3。第3氣體導入路 Q 53 1係在平面方向之位置較第1擴散空間42 1、第2擴散 空間422更外側位置，自上述最上段之平板4 1延伸至第3 擴散空間431。 並且，在第1擴散空間421之底面和位於氣體噴淋頭 4之下面之中央區域的中央側氣體供給面40a之間，多數 設置有上下兩端各開口於上述底面及中央側氣體供給面 40a之垂直的第1氣體供給路512。該些第1氣體供給路 5 12因通過第2擴散空間422及第3擴散空間431，故在 該些擴散空間422、431中之第1氣體供給路512之通過 -16- 200932945 部位’各配置有其內部空間形成該第1氣體供給路512之 小筒狀部425、432。 再者，在第2擴散空間4 22之底面和氣體噴淋頭4下 面的中央側氣體供給面40a之間，多數設置有上下兩端各 開口於上述底面及中央側氣體供給面40a之垂直的第2氣 體供給路522。該些第2氣體供給路522因通過第3擴散 空間43 1 ’故在該第3擴散空間43 1中之第2氣體供給路 φ 5 22之通過部位，各配置有其內部空間形成第2氣體供給 路522之小筒狀部43 3。 再者，在第3擴散空間431之底面和氣體噴淋頭4下 面的中央側氣體供給面40a之間，多數設置有上下兩端各 開口於底面及中央側氣體供給面40a之垂直的第3氣體供 給路532。並且，針對氣體流路之名稱，將如此從導入埠 至擴散空間爲止之氣體流路稱爲「氣體導入路」，將從擴 散空間至氣體噴淋頭4之下面爲止之流路稱爲「氣體供給 ❺路」。 氣體噴淋頭4之中央區域由於構成上述般，故藉由將 Sr原料氣體、Ti原料氣體及臭氧氣體各導入至第1導入 埠51a、第2導入埠52a及第3導入埠53a，該些氣體通 過互相獨立之流路而從氣體噴淋頭4之下面之中央側氣體 供給面4 0a被供給至第1圖所示之處理環境10之中央區 域10a。再者，將供給至該些導入埠51a〜53a之氣體切換 至沖洗氣體，依此也可將沖洗氣體供給至該中央區域l〇a -17- 200932945 接著，當針對氣體噴淋頭4之周緣區域中之處理氣體 之供給構造予以敘述時，在氣體噴淋頭4之上面中之偏離 上述中央區域的區域，如先前所述般在夾著該氣體噴淋頭 4之中心而互相對向之位置，設置有兩個第4導入埠54a 。再者，在上述周緣區域中，於高於上述第1擴散空間 421之位置，形成有環狀之第4擴散空間411，以從兩個 第4導入埠5 4a各將氣體導入至該第4擴散空間411之方 φ 式，形成有垂直延伸之第4氣體導入路541。並且，在第 4擴散空間41 1之下方側投影區域，低於第3擴散空間 431之位置，形成有環狀之第5擴散空間441，以氣體自 第4擴散空間411流入至第5擴散空間411之方式，形成 有垂直延伸之兩條第5氣體導入路542。 然後，上側之第4氣體導入路541和下側之第5氣體 導入路5 42各90度偏離氣體噴淋頭4之周方向，交互被 配置。然後，在第5擴散空間441之底面和位於氣體噴淋 Q 頭4下面之周緣區域的周緣側氣體供給面40b之間，多數 設置有上下兩端各開口於上述底面及周緣側氣體供給面 4〇b之垂直的第4氣體供給路543。 氣體噴淋頭4之周緣區域因構成如上述般，故藉由將 沖洗氣體導入至第4導入埠54a’在氣體噴淋頭4下面之 周緣側氣體供給面40b可從先前所述之處理氣體之供給部 位的中央區域10a外方之周緣區域l〇b供給沖洗氣體。 在此，氣體噴淋頭4係如第2圖所示般，構成將平板 疊層4段，當將最上段設爲第1段時，第1至3段各個平 -18- 200932945 面形狀係由圓形平板41、42及43所構成’第4段係由氣 體供給板44、45所構成。然後’該氣體供給板44、45在 徑方向被分割，被分割之一方的部位構成第1氣體供給板 45，另一方之部分構成第2氣體供給板44。更具體而言， 氣體供給板44、45位於上述中央區域10(氣體噴淋頭4 之下面之中央部），由構成第1氣體供給板之圓形中央側 板4 5，和從該中央側板4 5在徑方向被分割成同心狀，由 ^ 環狀所構成，構成包圍中央側板45之周緣外方而被設置 之第2氣體供給板的周緣側板44所構成。 第1段之平板41於上緣部具備凸緣部41a，該凸緣部 41a如第1圖所示般，被設置在與內部區塊26之間，密接 於具備有與該凸緣部41a嵌合之階差的環狀支撐構件25 之階差部上面。再者，該平板41中之凸緣部41a之下方 側及第2段以後之平板42、43及44之側面周面係在密合 於上述支撐構件25及擋環27之內周面之狀態下固定於處 Q 理容器2。 再者’如第3、4圖所示般，在第1段之平板41之下 面形成有環狀之溝，藉由該溝和第2段平板42之上面所 區劃之空間相當於上述環狀之第4擴散空間4 1 1。並且， 上述第1氣體導入路511及第4氣體導入路541被形成在 該第1段平板41。 在第2段平板42之中央區域中之上下兩面，如第2 圖〜第4圖所示般’形成有各平面形狀爲圓形之凹部，藉 由上面側之凹部和第1段之平板4 1所區劃之空間相當於 -19- 200932945 上述第1擴散空間421，再者，以下面側之凹部和第3段 之平板43所區劃之空間相當於上述第2擴散空間422。 在第3段之平板43之中央區域中之下面，如第3、4 圖所示般，形成有平面形狀爲圓形之凹部，藉由該凹部和 第4段之圓形的中央側平板45之上面所區劃之空間相當 於上述第3擴散空間431。 在第4段之環狀之周緣側平板44之上面，如第2〜4 _ 圖所示般，沿著該中央側平板45之周方向環狀形成有凹 〇 部，藉由該凹部和第3段之圓形的平板43之下面所區劃 之空間相當於上述第5擴散空間441。並且，在第2圖中 ，凹部符號係當作所對應之擴散空間之符號而被記載。 然後，先前之氣體導入路521、531、5 42及氣體供給 路5 12、522係如第3圖、第4圖所示般，分割成從第1 段至第4段之平板41、42、43、45及44之中所對應之多 數平板而被形成。再者，如先前所述般，氣體導入路或是 0 氣體供給路通過擴散空間之部分，因當作筒狀部423、425 ' 432、433被構成，故該些筒狀部423、425、432、433 係自形成擴散空間421、422、431之凹部之頂面突出至下 方或自凹部之底面突出至上方而被設置。 在擴散空間422、43 1中，因具有多數筒狀部425、 43 2、43 3，故雖然透過該部分執行熱傳達，但是因在擴散 空間421筒狀部423較少，故以上下之平板41、42之間 容易傳熱之方式，在先前所述之筒狀部42 3以外之處，也 設置有從凹部底面至上側平板爲止突出於上方之柱部424 -20- 200932945 筒狀部423、42 5、432、433及柱部42 4之上端面或 是下端面，係與凹部以外之平板42、43之面成爲相同表 面（相同高度），因此筒狀部423、425、432、433之上 端面或是下端面，係與對向之平板41、43、45之面密接 ’抑制流動於筒狀部423、425、432、433內之氣體漏洩 至氣體擴散空間421、422、432。在以上中，各平板41〜 ^ 45內之先前所述之氣體擴散空間421、422、431、411、 441、氣體導入路511、521、531、541、542、氣體供給路 512、522、532、543係使第1〜第3處理氣體（Sr原料氣 體、Ti原料氣體及臭氧氣體）獨立而構成用以供給至處理 環境之氣體流路。 在以上所說明之氣體噴淋頭4之各平板41〜45上， 如第3圖、第4圖以幾個代表所示般，穿設有用以締結彼 此之螺栓孔81a〜84a、81b〜84b。使用該些螺栓孔81a〜 φ 84a、81b〜84b，例如第2圖所示般，藉由螺栓81締結平 板41和平板42，藉由螺栓82締結平板43之中心和中央 側平板45之中心之後，藉由螺栓83將該平板43締結在 平板42之下面側，最後藉由螺栓84將周緣側平板44締 結在平板43之下面側’依此構成第3圖、第4圖所不之 氣體噴淋頭4。並且，上述螺栓81〜84爲了便於說明例示 著省略締結氣體噴淋頭4之各構件41〜45之螺栓之一部 份，實際上各構件41〜45係藉由更多數之螺栓而強固締 結。再者，爲了便於圖式，在第3圖、第4圖中’省略螺 -21 - 200932945 检孔81a〜84a、81b〜84b之記載。 再者，在上述氣體導入路511、521、541 在氣體擴散空間421、422、41 1、44〗之部分 大之擴徑部。詳細而言，針對第1氣體導入路 圖（a)代表所表示般，第1氣體導入路511 5 1 1 a形成例如圓管狀，開口部5 1 1 a之斷路面ί r22: r2爲該斷路之半徑）成爲第1氣體導入路 φ 面積八1(=冗1"12:|*1爲該斷路之半徑）之大 且構成假設性連接第1氣體導入路511之終端 5 1 1 a之終端部之面（第5圖（a )中以虛線所 口部511a之側周面所構成之角度成爲30°。如 由設置擴徑部，可以使氣體自氣體導入路511 、542更容易擴散至氣體擴散空間421、422、^ 〇 再者，形成在第4段之中央側平板4 5之 φ 512、522及532，係如第5圖（b)所示般， 側氣體供給面40a之下側部分之口徑小於其上 表示尺寸之一例時，上側部分之口徑爲「Ll = 側部分之口徑爲「L2 = 1 mm」、下側部分之長 5mm」。如此一來，藉由縮小氣體供給路512 之下側部分之口徑，可增大自該些供給路512 供給至處理環境10之各處理氣體或沖洗氣體 (Peclet number ) Pe之値，可以防止供給至虔 之處理氣體等之擴散空間421、422、431入侵 、542 開口 ，形成有擴 5 1 1以第5 及其開口部 責 Α2 ( = π 5 1 1之斷路 約兩倍，並 部和開口部 示），和開 此一來，藉 、521 、 541 m、441 內 氣體供給路 開口於中央 側部分。當 2mm」 、下 度爲「H = 、522 ' 532 、522 、 532 之貝克勒數 i理環境ίο 。在本實施 -22- 200932945 型態中，雖然自不執行例如處理氣體供給之期間中之氣體 供給路512、522、5 32流動少量之沖洗氣體，但是以流動 該沖洗氣體之時之貝克勒數成爲「Pe220」之方式，設定 有下側部分之口徑。在此，Pe=Vs· H/D，Vs爲流動氣體 供給路512、522、5 3 2之下側部分的沖洗氣體之流速，D 爲處理氣體對沖洗氣體之擴散常數。在此，在本實施型態 中，雖然使用Sr原料氣體、Ti原料氣體、臭氧氣體之3 @ 種處理氣體’但是於算出貝克勒數Pe之時所使用之處理 氣體之擴散常數D，採用擴散常數最大之例如臭氧氣體之 値’設定成也可以防止針對擴散常數較小的Sr原料氣體 或Ti原料氣體的逆擴散。 具有如此構造之氣體供給路512、522、532係在中央 側平板45之下面之中央側氣體供給面40a開口，如第7 圖所示般，各構成Sr原料氣體供給孔51b、Ti原料氣體 供給孔52b、臭氧氣體供給孔53b。爲了便於說明，使第7 ❹圖所示之各氣體供給孔5 1 b〜5 3 b可藉由表記記號識別， Sr原料氣體供給用之Sr原料氣體供給孔51b之群係以「 ◎」之記號’ Ti原料氣體供給用之Ti原料氣體供給孔 5 2b之群係以「〇」之記號，臭氧氣體供給用之臭氧氣體 供給孔53b之群係以「#」之記號，表記在中央側氣體供 給面40a上之配置位置。 在此，如該氣體噴淋頭4所示般，藉由多數設置在對 抗於晶圓W之中央側氣體供給面4〇a之氣體供給孔51b〜 53b ’供給處理氣體’依此執行成膜之時，氣體供給孔51b -23- 200932945 〜53b彼此間隔（以下稱爲間距）或從載置在載置台3上 之晶圓W表面至氣體噴淋頭4之中央側氣體供給面40a爲 止之距離（以下稱爲間隙）對膜質或膜厚之面內均勻性造 成影響。 即是，當對於從晶圓W表面至中央側氣體供給面40a 爲止之間隙，供給相同種類之處理氣體之氣體供給孔彼此 51b〜53b之間距相對性大時，自各氣體供給孔51b〜53b Λ 所供給之處理氣體於充分擴散而形成與藉由旁邊之氣體供 〇 給孔51b〜53b供給之處理氣體相等之處理氣體環境之前 ，到達至晶圓W。其結果，產生在晶圓W面內形成處理 氣體之吸附量多的區域和少的區域，配合氣體供給孔51b 〜53b之配列圖案，膜厚變薄，或變厚的現象（以下，稱 爲氣體供給孔51b〜53b之轉印）。 在此，本實施型態所涉及之成膜裝置1，係如第1圖 中所說明般，可自晶圓W之交接位置使載置台3升降至 φ 晶圓W之處理位置，該處理位置係從例如第1 〇圖（a )所 示般間隙成爲「h = 40mm」之最大之時，至如第10圖（b )所示般，成爲「h=8mm」之最小之時，可以使處理位 置於上下方向變更自如。該處理位置雖然係因應例如指定 成膜條件之處理程式，依據選擇事先所記憶之最適當處理 位置等之手法而決定，但是自各原料氣體之使用量抑制之 觀點來看，強烈要求盡量在間隙較短之處理位置執行成膜 處理。在此，在本實施型態所涉及之氣體噴淋頭4中’係 以即使在間隙h成爲最小之位置執行處理之時’亦可抑制 -24- 200932945 轉印之方式，儘可能將各氣體供給孔51b〜53b之間距配 列成最小。 即是，將中央側氣體供給面40a分割成由互相相同尺 寸之正三角形所構成之單位區劃401，在構成該單位區劃 40 1之各正三角形的3個頂點，各分配Sr原料氣體供給孔 5 1b、Ti原料氣體供給孔52b、臭氧氣體供給孔53b，將多 數氣體供給孔51b〜53b配列在中央側氣體供給面40a。 ^ 並且，更詳細而言，在第8圖中於三角形ABC之頂 點A分配例如臭氧氣體供給孔53b，在頂點B分配例如Sr 原料氣體供給孔5b，在頂點C分配例如Ti原料氣體供給 孔5 2b。之後當對三角形ABC之邊BC描畫線對稱之三角 形BCD時，則在頂點D分配與此線對稱之頂點A之臭氧 氣體供給孔5 3 b。同樣之情形，即使針對三角形AB C之各 邊AB、AC執行，在頂點E分配Ti原料氣體供給孔52b， 在頂點F分配Sr原料氣體供給孔51b。以下，重覆此在氣 Q 體噴淋頭4之氣體供給面40a形成各處理氣體之氣體供給 孔。若藉由此，則在單位區劃4 01內必定各存在3種類之 氣體孔，即是3種類之氣體孔之分布密度相同。並且，對 於各個氣體種類之相鄰氣體孔之距離成爲相等（於後述對 於所有3種類氣體孔成爲/*31)，所有氣體種類被均勻吐 出至處理環境10。 在此，如第5圖（b )所示般，於例如各氣體供給路 512、522、532之上側部分之口徑爲「Ll=2mm」之時， 由工作精度或相鄰氣體供給路512、522、532間所需之壁 -25- 200932945 厚度等的觀點來看，相鄰之各氣體供給路512、522、532 彼此之距離例如大約7mm爲加工限度，此時，如第7圖 所示般，因單位區劃401之一邊的長度1爲7mm，故臭氧 氣體供給孔53b彼此之間距爲「a=(入3 ) 1」，大約爲 1 2mm，該距離爲可製作之最小間距。再者，若藉由如此 之配列法，可以說因針對其他之氣體供給孔5 1 b、5 2b彼 此之間距也同樣成爲可製作之最小間距，故第7圖、第8 φ 圖所示之配列法即使在間隙h也爲最小之時，亦配列成難 以產生氣體供給孔51b〜53b之轉印。 若藉由以上所說明之第8圖的氣體孔配列法，在例如 正四角形之各頂點，分配4種類之不同氣體種類，之後若 對四角形之各邊線對稱地描畫四角形，分配各氣體種類之 氣體孔時’ 4種類之氣體孔之分布密度則相等，可以製作 各氣體種類之相鄰氣體孔之距離也相等之噴淋頭，並且可 以適用於正多角形（正五角形、正六角形等）（此時，各 φ 供給5種類之處理氣體、6種類之處理氣體）。另外，對 於如此之中央側氣體供給面40a中之氣體供給孔51b〜53b 之配列法，針對被形成在周緣側平板44之下面之周緣側 氣體供給面40b之沖洗氣體供給孔之配列，因目的僅被設 置成供給沖洗氣體，故即使不是在第8圖所說明之特別配 列法亦可。例如，第2圖由周緣平板44之上面側觀看時 ’在構成第5擴散空間441之凹部的底面全體，均勻配置 第4氣體供給路5 43，以使所需之量的沖洗氣體不偏向於 周緣區域1 Ob，可以均勻供給之方式予以配列即可。 -26- 200932945 接著，針對對氣體噴淋頭4之處理氣體或沖洗氣體之 供給管之構成予以說明。在最上段之平板41上面之各導 入埠51a〜54a係如第4圖所示般，連接有用以供給各種 氣體之氣體供給管線610〜640，第1導入埠51a連接有 Sr原料氣體供給管線610，第2導入埠52a連接有Ti原 料氣體供給管線620，第3導入埠53a連接有臭氧氣體供 給管線630，再者第4導入埠54a連接有沖洗氣體供給管 φ 線640。並且，該些各氣體供給管線610〜640係如第6圖 之氣體供給路徑圖所示般，在上流側各連接有各種供給源 6 1 〜6 4 〇 詳細而言’ Sr原料氣體供給管線610與Sr原料供給 源61連接’在該供給源61貯存有例如Sr(THD)2 ( Strotium bis(tetra methylheptanedionate)或 Sr(Me5Cp)2( penta-methylcyclopentadienyl Strontium)等之液體 Sr 原料 ’該Sr原料被推至供給管，藉由氣化器611被氣化而使 參 Sr原料氣體被供給至Sr原料氣體供給管線610。200932945 IX. Description of the Invention [Technical Field] The present invention relates to a gas supply device for supplying a processing gas to a shower in a substrate. [Prior Art] In the semiconductor manufacturing apparatus, there is a device in which the gas supply device and the mounting table are opposed to each other in the processing container, and the processing gas is supplied to the substrate on the mounting table from the gas supply device, and the substrate is processed, for example, Membrane device or hungry device. In the film forming apparatus, there is a thermal CVD in which a reaction gas is heated and reacted. Further, it is known that, for example, a plurality of types of processing gas are supplied in two stages, and in the first step, a processing gas is supplied. In the second step, the supply of the other processing gas is performed, and the steps are performed alternately, and the reaction product (film) generated by the processing gas is sequentially laminated, that is, the so-called ALD (Atomic Layer Deposition). Although the ALD is known to have a side flow pattern from the lateral side of the substrate into the processing gas, the inventors of the present invention have conceived that it is more advantageous to use a gas supply device opposed to the substrate even in the ALD. This gas supply device is called a gas shower head or the like, and a gas supply plate called a shower plate or the like which forms a plurality of gas supply holes is provided at the lowermost portion of the gas supply device having the gas introduction port. The gas supply device body is provided with a gas flow path for communicating the gas introduction port and the gas supply hole corresponding thereto, and a diffusion space for diffusing the gas to the lateral direction of 200932945 is formed in the middle of the gas flow path, for example, by ALD The gas supply device of the film forming type is configured to supply the processing gas supplied in each step from the different gas supply holes. In the ALD, when the type of the processing gas supplied from the gas shower head is switched, the flushing gas is supplied before the start of the next processing gas supply, and the processing gas remaining in the processing environment in which the film formation is performed is completely eliminated. operation. In the gas squirting head for ALD performed by such a flushing operation, the inventors of the present invention examined the central region of the gas shower head as a region for performing supply of the processing gas and the flushing gas, and by using the peripheral region In the region where the supply of the flushing gas is performed, most of the gas shower heads from the central region and the peripheral region are supplied with a large amount of flushing gas, which shortens the working time of the flushing and increases the throughput of the film forming apparatus. Further, in the gas supply device, the configuration of the shower head is adjusted depending on the type of the processing body. For example, when viewing the aperture or length (depth) of the gas supply hole, in order to prevent a process gas supplied from a gas supply hole to the processing container φ from diffusing into the gas for other processing gases adjacent to the gas supply hole The pores are supplied, and the processing gases react with each other in the gas flow path or the diffusion space to cause the reactants to adhere to each other to generate particles. When a gas that is easily diffused is used, it is necessary to adjust the size of the gas supply hole or increase the length thereof. Further, it is not limited to the gas supply hole of the processing gas, and the supply hole of the flushing gas may be changed in order to adjust, for example, the flushing efficiency. Moreover, the actual processing of the wafer of the product is not limited. In the development stage of the device, even when the aperture or length of the gas supply hole suitable for the process processing program is obtained, the actual assembly device is changed to change various gases - 5- 200932945 The case of the aperture or length of the body supply hole. At this time, when the gas supply hole is changed by, for example, changing the type of the processing gas, it is advantageous in terms of cost to exchange only the entire shower plate system than the exchange gas shower head. However, in the production of the shower plate, it is necessary to have a high-precision machining position and an aperture of, for example, a fine gas supply hole having a diameter of about 1 to 2 mm. Then, since the wafer has a large diameter, the shower plate has also become large-sized, and it is not easy to apply such high-precision processing to a large-area flat plate, and the production cost is also high. Then, as described above, for example, from the center When the processing gas is supplied from the region and the flushing gas is supplied from the peripheral region, even if the gas supply hole of the processing gas is changed, the gas supply hole for the flushing gas must be processed for the shower plate, and conversely, even if the flushing is changed. When the gas supply hole of the gas is supplied, it is necessary to process the gas supply hole of the process gas, and there is a waste situation Q in which the gas supply hole other than the gas supply hole to be adjusted must be processed, and the result hinders the development cost and the flow cost. The low price. Further, although a gas shower head in which the gas type or flow rate of the etching gas supplied from the central region and the peripheral region is different from each other in the etching apparatus is known (refer to Japanese Patent Laid-Open No. 2006- 1 65 3 99, No. 003) 7 paragraphs to paragraphs 0039 and 3), but even in such a gas shower head, when the gas supply hole of one of the central area and the peripheral area is changed, there is also a waste. Further, in Japanese Laid-Open Patent Publication No. 2006-1 65 3 99, there is no description of a technique for eliminating such a waste situation. 200932945 [Invention] The present invention has been made in view of such circumstances, and its object is to a substrate. The gas supply device for supplying a gas in a shower-like manner provides a gas supply device which can exchange a part of the components to change the type and flow rate of the processing gas, and is advantageous for producing exchange parts. Other objects of the invention. The gas supply device is provided. @ The gas supply device of the present invention is provided with a gas supply device body, The gas supply device body has a plurality of introduction ports for introducing a processing gas, Introducing a gas flow path from the majority of the process gas introduced into the crucible; And a gas supply plate, This is arranged to face the substrate placed on the mounting table in the processing container, a plurality of gas supply holes that are connected to the gas flow path and supply the process gas guided by the gas flow path to the substrate, The above gas supply plate has: The first gas supply plate, Contains most gas supply holes, a processing gas for supplying a plurality of Φ different from each other; And the second gas supply plate, Contains most gas supply holes, The first gas supply plate is provided to be detachable from the gas supply device body. In the gas supply device of the present invention, The second gas supply plate is preferably provided to be detachable from the gas supply device body. In the gas supply device of the present invention, The substrate is a semiconductor wafer, The gas supply plate is divided in the radial direction, One of the divided parts of the 200932945 position constitutes the first gas supply plate, The other part is preferably the second gas supply plate. In the gas supply device of the present invention, The first gas supply plate is provided at a central portion of a lower region of the gas supply device body. The second gas supply plate is formed of a ring shape. It is preferable to surround the periphery of the first gas supply plate. _ In the gas supply device of the present invention, Preferably, the plurality of gas supply holes of the second gas supply plate are supplied with only the purge gas. In the gas supply device of the present invention, The introduction port has a first introduction port into which the first process gas is introduced, And introducing the second introduction port of the second processing gas, And introducing the third introduction 第 of the third processing gas, The plurality of gas supply holes of the first gas supply plate have a first gas supply hole for supplying the first process gas introduced by the first introduction port to the substrate. And supplying the second processing gas introduced by the second introduction port to the second gas supply hole of the substrate, And feeding the third processing gas introduced in the third introduction port to the third gas supply hole of the substrate, The first processing gas, It is preferable that each of the second processing gas and the third processing gas is composed of a different type. In the gas supply device of the present invention, The first gas supply hole and the second gas supply hole and the gas supply hole of the first -8 - 200932945 3 supply a processing gas to each other. Making the first process gas, The second process gas and the third process gas react with each other, It is preferable to laminate a film on the surface of the above substrate. In the gas supply device of the present invention, The introduction port has a first introduction port into which the first process gas is introduced, And introducing the third introduction port of the third process gas, The plurality of gas supply holes of the first gas supply plate have a first gas supply hole that supplies φ to the first process gas introduced by the first introduction port to the substrate. And supplying the third processing gas introduced in the third introduction port to the third gas supply hole of the substrate, It is preferable that each of the first processing gas and the third processing gas is formed of a different type from each other. In the gas supply device of the present invention, It is preferable that the first gas supply plate supplies four or more types of process gases. φ. According to the present invention, the gas supply plate has a first gas supply plate including a plurality of gas supply holes. And a second gas supply plate ??? containing a plurality of gas supply holes for supplying a processing gas different from the processing gas supplied from the plurality of gas supply holes of the first gas supply plate, Alternatively, the processing gas is supplied at a flow rate different from the flow rate of the processing gas supplied from the plurality of gas supply holes of the first gas supply plate. The first gas supply plate is provided to be detachable from the gas supply device body. therefore, When changing the type or flow rate of the treatment gas, Or when performing an operation to obtain parameters for a suitable gas supply hole suitable for the type or flow rate of the gas to be treated, -9- 200932945 No exchange gas supply plate, Only the first gas supply plate can be exchanged. As a result, the material used can be reduced as compared with the case where the gas supply plate is integrally formed. Or can reduce the processing time, The production cost of the gas supply plate can be reduced. [Embodiment] First, The structure of the entire film forming apparatus 1 of the embodiment of the present invention is This will be described with reference to Fig. 1 . The film forming apparatus 1 according to the present embodiment includes a raw material gas containing strontium (Sr) as a first processing gas, for example (hereinafter, Known as Sr source gas), a raw material gas containing titanium as a second treatment gas (hereinafter referred to as Ti raw material gas), Reacting the ozone gas with the oxidizing gas as the third processing gas, By ALD process, Barium titanate (SrTi03, which is a high dielectric material, The function of the film laminate hereinafter abbreviated as STO) on the surface of the wafer belonging to the substrate 〇 φ is as shown in the longitudinal section of Fig. 1, The film forming apparatus 1 is provided with a processing container 2 constituting a vacuum container. And being disposed in the processing container 2, a mounting table 3 for mounting a wafer W belonging to a substrate, And being disposed on the upper portion of the processing container 2 so as to face the mounting table 3, A gas shower head 4 for supplying a processing gas to a gas supply device on the surface of the wafer W on the mounting table 3. The mounting table 3 is constituted by a table 31 corresponding to the stage body supporting the wafer W. And a workbench cover 32 that covers the workbench 31, The stage 31 is made of, for example, aluminum nitride or quartz. For example, a flat plate shape of -10-200932945 is formed. By heating the carrier of the mounting table 3 inside the table 31, A stage adder 33 for raising the temperature of the wafer W to the film formation temperature is buried. The table heater 33 is constituted by, for example, a sheet-like resistor body. Power is supplied from the power supply unit 68, Thereby, the wafer W placed on the stage 3 can be heated to, for example, 280 °C. and, In the work 31, there is a static clamp without a pattern. The wafer W placed on the mounting table 3 can be electrostatically adsorbed and fixed. φ In addition, Forming a table cover of the mounting table 3 together with the table 31, The utility model has the function of covering the upper surface and the side surface of the table 31, Prevents the reaction product or reaction by-products from accumulating on the surface of the table. The table cover 32 is formed of, for example, a cover member that is attached and detached from a quartz (referred to as a cover shielding, etc.). Forming a circular recess having a diameter slightly larger than the wafer W at a central portion thereof, The positioning of the wafer W placed on the mounting surface of the table cover 32 can be performed. The mounting table 3 is supported by, for example, a columnar support member 34 at the center of the lower side of the table 0, The support member 34 is configured to be raised and lowered by a lifting mechanism. then, By lifting the support member 34, The mounting table 3 is between the external transport mechanism and Perform the intersection of the wafer W, Between the processing position where the processing of the wafer W is performed, For example, the maximum lifting is about 80 mm. As shown in Figure 1, The support member 34 passes through the bottom surface of the processing container 2, Specifically, the bottom surface portion of the lower side container 22, which will be described later, is connected to the lifting plate 23 which is lifted and lowered by the above-described growth and lowering mechanism 69, and the lifting plate 23 and the lower side container 22 are connected by the bellows 24 Set the heat at the stage at 32 such as 3 1 as > Being 3 1 69 can be connected) > And -11 - 200932945 airtight joint. Furthermore, The mounting table 3 is provided with, for example, three lift pins 35 for supporting the back surface of the wafer W and lifting the wafer W by the mounting surface of the mounting table 3. The lift pins 35 are as shown in Fig. 1, In a state where the mounting table 3 is moved to the processing position of the wafer W, The flat head of each of the lift pins 35 is locked on the top of the table 31. With the lower end portion flying out from the bottom surface of the table 31, In the state where the table 31 is penetrated in the vertical direction, 0 is mounted. On the lower side of each of the lift pins 35 of the through table 31, An annular lifting member 36 is provided, In a state where the mounting table 3 is lowered to the transfer position of the wafer W, Lifting and lowering the lifting member 36, By pushing each of the lift pins 35 up or down, The wafer W supported by the lift pins 35 can be lifted and lowered from the mounting surface of the mounting table 3. here, On the upper side of the table cover 32, Where the lift pin 35 previously described is penetrated, An opening portion for storing the head of the lift pin 35 is provided. 0 Therefore, As shown in Figure 1, In a state where the mounting table 3 is moved to the processing position of the wafer W, The top of the table cover 32 and the top of each of the lift pins 35 are almost the same surface. A flat wafer W mounting surface is formed on the upper surface of the mounting table 3. and, The side wall portion of the table cover 32 extends to the lower side of the table 31. Forming a skirt 321 that surrounds the lower region of the table 31 from the side, A side peripheral surface that is integral with the body of the table 31 is formed. then, The configuration of the processing container 2 will be described. The processing container 2 according to this embodiment is configured by overlapping an exhaust duct 21 which is annularly formed in a flat bowl-shaped lower container 22. The lower container 22 is made of, for example, aluminum or the like by -12-200932945. a through hole 221 is provided on the bottom surface thereof, The support member 34 of the table 31 described earlier is passed through. Furthermore, Around the through hole 221, For example, a flushing gas supply path 222 is provided at four places, The flushing gas such as a nitrogen gas supplied from the flushing gas supply source 66 can be sent to the lower container 22. and, In Figure 1, The conveyance port 28 of the dotted line type is for performing the loading and unloading of the wafer W by the external conveyance mechanism. Switching by means of a gateless valve. The φ exhaust duct 21 is formed into an annular body formed by bending an angled duct made of, for example, aluminum. The inner diameter and the outer diameter of the annular body are formed to have almost the same size as the inner and outer diameters of the side wall portion 223 of the lower side container 22 described earlier. Furthermore, When a wall surface close to the side of the processing environment of the exhaust duct 21 is referred to as an inner wall surface, When the wall on the side far from the treatment environment is called the outer wall surface, At the end of the inner wall surface, A plurality of slit-shaped vacuum exhaust ports 211 extending in the lateral direction are arranged in the circumferential direction at intervals. An exhaust pipe 2 9 is connected to, for example, one of the outer wall surfaces of the exhaust duct 21 For example, by using a vacuum pump 67 connected to the exhaust pipe 29, Vacuum evacuation from each vacuum exhaust port 211 can then be performed. Furthermore, As shown in Figure 1, In the exhaust duct 21, a heat insulating member 2 1 2 is provided so as to cover the outer wall surface and the outer peripheral portion of the lower surface side from the upper surface side thereof. The exhaust duct 2 1 having the above-described configuration is superposed on the lower container 22 via the heat insulating member 2 1 2 , The processing container 2 is formed integrally with each other in a state of being insulated from each other. then, A plurality of vacuum exhaust ports 211 provided on the inner wall surface of the exhaust duct 21 are opened toward the space including the processing environment 10 formed between the gas shower head 4 and the mounting table 3, Therefore, the vacuum exhaust port 211 can be used by -13- 200932945. Vacuum evacuation of the processing environment 10 is performed. and, Inside the processing container 2, As shown in Figure 1, An inner block 26 for partitioning the space below the space in the lower container 22 from the upper portion of the upper portion of the upper stage 3 is provided in cooperation with the mounting table 3. The inner block 26 is an annular member formed of, for example, aluminum. The space which can be attached to the space between the inner wall surface of the side wall portion 223 of the lower container 22 and the side peripheral surface of the mounting table 3 is formed. Furthermore, On the upper surface of the inner block 26, the outer peripheral portion is provided with a protruding edge 262 so as to extend from the outer peripheral portion to the outer side. The inner block 26 is fixed to the processing container 2 by engaging the protruding edge 262 with the intermediate ring body 252 disposed between the side wall portion 223 of the lower container 22 and the lower end of the inner wall of the exhaust duct 21 . And as shown in Figure 1, From the top of the inner block 26 to the inner peripheral surface, Covered by a block cover 261 made of quartz, It becomes possible to inhibit the accumulation of reactants on the surface. then, When the mounting table 3 is at the processing position, the block cover 261 surrounds the side of the table cover 3 2 φ (the side of the skirt 321) via a gap of, for example, 2 m m , Accordingly, the gas in the processing environment 10 is difficult to diffuse into the lower space. And an annular space between the vacuum exhaust port 21 1 formed on the inner wall surface of the exhaust duct 21 and the processing environment ,, Equipped with a reduction in the flow conductivity of the space, It is intended to uniformize the exhaust gas in the circumferential direction of the processing container 2 from the viewpoint of the processing environment. The section forms a retaining ring 27 of an inverted-shaped annular member. Next, the gas shower head 4 will be described. Fig. 2 is an exploded perspective view of the gas shower head 4'. Fig. 3 and Fig. 4 are longitudinal oblique views and longitudinal directions of the cutting gas shower head 4 at the position of a dotted line at -14-200932945 shown in Fig. 2. Sectional view, Figure 3, Figure 4 shows the direction of the cut from left to right when viewed from the center. The gas shower head 4 according to this embodiment mode can supply three types of Sr source gases of a processing gas, The Ti source gas, the ozone gas or the flushing gas is discharged from the central portion of the central portion of the wafer W on the mounting table 3 to the processing environment 10, And flushing gas is discharged from a peripheral region surrounding the annular portion of the central region. then, In the center φ region of the gas shower head 4, The Sr source gas is supplied from each dedicated gas supply hole, A so-called post-mixing type of gas shower head of Ti raw material gas and ozone gas. First of all, When describing the supply structure of the process gas in the above central region, Then as shown in Figure 3, As shown in Figure 4, Above the gas shower head 4, It is useful to introduce each Sr raw material gas, The first introduction port 51a of the Ti source gas and the ozone gas, The second introduction port 52a and the third introduction port 53a, In the introduction ports 51a to 53a, It is also possible to supply a flushing gas different from the above various processing gases. Inside the gas shower head 4, φ is a first diffusion space 421 which is flattened at intervals from each other in sequence, The second diffusion space 422 and the third diffusion space 431, The diffusion spaces 421 to 431 form a coaxial circular shape. The third diffusion space 431 has a larger diameter than the first diffusion space 421 and the second diffusion space 422. then, When the respective introduction ports 51a to 54a are disposed on the gas shower head 4, As shown in Figure 2, The first introduction port 51a is provided at one of the upper center portions of the gas shower head 4, When the Y direction shown in Fig. 2 is the front side, the second introduction port 52a is provided at four places on the left and right sides before and after the first introduction port 51a. Furthermore, The third guide -15- 200932945 The entrance 53a is placed at the outer side 4 of the second introduction 埠52a. All of the nine inlet ports 51a to 53a are arranged in a cross shape in the central region above the gas shower head 4. Furthermore, The fourth introduction port 4 4a for flushing gas is on the outer side of the central region. Two places on the diagonal line of the center of the first introduction port 51a as described above are provided. The first introduction port 51a provided at the center of the upper surface of the gas shower head 4 communicates with the first diffusion space 42 1 via the first gas introduction path 511. The gas φ body shower head 4 is as described later. 4 segments of laminated plates, The first gas introduction path 511 is a flat plate 41 which is formed vertically in the uppermost stage of the plurality of flat plate groups. Furthermore, The second introduction port 52a communicates with the second diffusion space 422 via the second gas introduction path 521, The third introduction port 53a communicates with the third diffusion space 431 via the third gas introduction path 531. The second gas introduction path 521 is vertically extended by the flat plate 41 of the uppermost stage through the first diffusion space 421. therefore, In the first diffusion space 421, The small tubular portion 42 3 forming the second gas introduction path 521 is disposed in the internal space. The third gas introduction path Q 53 1 is located closer to the first diffusion space 42 1 in the planar direction. The second diffusion space 422 is located further outward, The flat plate 4 1 from the uppermost stage extends to the third diffusion space 431. and, Between the bottom surface of the first diffusion space 421 and the center side gas supply surface 40a of the central portion located below the gas shower head 4, A plurality of first gas supply passages 512 that are perpendicular to the bottom surface and the center side gas supply surface 40a are provided at the upper and lower ends. The first gas supply paths 512 pass through the second diffusion space 422 and the third diffusion space 431. Therefore, in the diffusion space 422, The passage of the first gas supply path 512 in 431 -16-200932945 is disposed in a small cylindrical portion 425 in which the internal space forms the first gas supply path 512, 432. Furthermore, Between the bottom surface of the second diffusion space 4 22 and the center side gas supply surface 40a below the gas shower head 4, A plurality of vertical gas supply passages 522 which are open at the upper and lower ends and which are perpendicular to the bottom surface and the center side gas supply surface 40a are provided. The second gas supply path 522 passes through the third diffusion space 43 1 ', so that the second gas supply path φ 5 22 passes through the third diffusion space 43 1 . Each of the small cylindrical portions 43 3 in which the internal space forms the second gas supply path 522 is disposed. Furthermore, Between the bottom surface of the third diffusion space 431 and the center side gas supply surface 40a below the gas shower head 4, A plurality of vertical third gas supply paths 532 which are open at the upper and lower ends and which are open to the bottom surface and the center side gas supply surface 40a are provided. and, For the name of the gas flow path, The gas flow path from the introduction of the crucible to the diffusion space is referred to as a "gas introduction path". The flow path from the diffusion space to the lower side of the gas shower head 4 is referred to as a "gas supply circuit". The central area of the gas shower head 4 is constituted as described above. Therefore, by using Sr raw material gas, Each of the Ti source gas and the ozone gas is introduced into the first introduction port 51a, The second introduction port 52a and the third introduction port 53a, These gases are supplied from the center side gas supply surface 40a on the lower surface of the gas shower head 4 to the central region 10a of the processing environment 10 shown in Fig. 1 through mutually independent flow paths. Furthermore, Switching the gas supplied to the introduction ports 51a to 53a to the purge gas, According to this, the flushing gas can also be supplied to the central region l〇a -17- 200932945. When the supply structure of the process gas in the peripheral region of the gas shower head 4 is described, In the area above the central region of the gas shower head 4, Positioning opposite to each other at the center of the gas shower head 4 as previously described, There are two fourth import ports 54a. Furthermore, In the above peripheral area, Above the first diffusion space 421, Forming a fourth diffusion space 411 having a ring shape, The gas is introduced into the fourth diffusion space 411 from each of the two fourth introduction ports 45 4a, A fourth gas introduction path 541 that extends vertically is formed. and, Projecting a region on the lower side of the fourth diffusion space 41 1 , Below the third diffusion space 431, Forming a fifth fifth diffusion space 441, The gas flows from the fourth diffusion space 411 to the fifth diffusion space 411, Two fifth gas introduction paths 542 extending vertically are formed. then, The fourth fourth gas introduction path 541 on the upper side and the fifth gas introduction path 5 42 on the lower side are each 90 degrees offset from the circumferential direction of the gas shower head 4, The interaction is configured. then, Between the bottom surface of the fifth diffusion space 441 and the peripheral side gas supply surface 40b of the peripheral region located below the gas shower Q head 4, In many cases, a fourth gas supply path 543 which is open at the upper and lower ends and which is perpendicular to the bottom surface and the peripheral side gas supply surface 4b is provided. The peripheral region of the gas shower head 4 is constituted as described above. Therefore, the peripheral side gas supply surface 40b under the gas shower head 4 by introducing the flushing gas into the fourth introduction port 54a' can be peripherally located outside the central region 10a of the supply portion of the processing gas previously described. b supplies flushing gas. here, The gas shower head 4 is as shown in Fig. 2, Forming a stack of 4 flat sheets, When the uppermost segment is set to the first segment, The first 1-3-200932945 face shape of paragraphs 1 to 3 is made up of a circular plate 41. The fourth stage is composed of 42 and 43. The fourth stage is composed of a gas supply plate 44. 45 constitutes. Then the gas supply plate 44, 45 is divided in the radial direction, One of the divided portions constitutes the first gas supply plate 45, The other part constitutes the second gas supply plate 44. More specifically, Gas supply plate 44, 45 is located in the central region 10 (the central portion below the gas shower head 4), The circular center side plate 4 5 constituting the first gas supply plate, And being divided into concentric shapes in the radial direction from the center side plate 45, Consisting of ^ ring, The peripheral side plate 44 of the second gas supply plate provided to surround the periphery of the center side plate 45 is formed. The flat plate 41 of the first stage has a flange portion 41a at the upper edge portion. The flange portion 41a is as shown in Fig. 1, Is disposed between the internal block 26, The upper surface of the annular support member 25 having the stepped portion fitted to the flange portion 41a is in close contact with the stepped portion. Furthermore, The lower side of the flange portion 41a of the flat plate 41 and the flat plate 42 after the second stage The circumferential surface of the side faces 43 and 44 is fixed to the Q container 2 in a state of being in close contact with the inner peripheral surface of the support member 25 and the retaining ring 27. Again, as in the third, As shown in Figure 4, An annular groove is formed below the flat plate 41 of the first stage, The space defined by the groove and the upper surface of the second-stage flat plate 42 corresponds to the annular fourth diffusion space 4 1 1 . and, The first gas introduction path 511 and the fourth gas introduction path 541 are formed in the first-stage flat plate 41. In the upper and lower sides of the central portion of the second stage flat plate 42, As shown in Fig. 2 to Fig. 4, a concave portion having a circular shape in plan view is formed. The space defined by the concave portion on the upper side and the flat plate 4 1 in the first stage corresponds to the first diffusion space 421 of -19-200932945, Furthermore, The space defined by the concave portion on the lower side and the flat plate 43 in the third stage corresponds to the second diffusion space 422. Below the central area of the flat plate 43 of the third paragraph, As the third, 4, as shown in the figure, Forming a concave portion having a circular shape in plan view, The space defined by the concave portion and the upper surface of the circular center side flat plate 45 of the fourth stage corresponds to the third diffusion space 431. On the upper side of the annular peripheral plate 44 of the fourth segment, As shown in the 2nd to 4th _, A concave portion is formed in a ring shape in a circumferential direction of the center side flat plate 45, The space defined by the concave portion and the lower surface of the circular flat plate 43 of the third segment corresponds to the fifth diffusion space 441. and, In Figure 2, The symbol of the recess is described as a symbol of the corresponding diffusion space. then, The previous gas introduction path 521, 531, 5 42 and gas supply road 5 12, 522 is as shown in Figure 3, As shown in Figure 4, Divided into flat plates 41 from the first segment to the fourth segment, 42, 43. Most of the plates corresponding to 45 and 44 are formed. Furthermore, As previously stated, a gas introduction path or a portion of the gas supply path that passes through the diffusion space, Because it is regarded as the cylindrical portion 423, 425 ' 432, 433 is composed, Therefore, the cylindrical portions 423, 425, 432, 433 series self-forming diffusion space 421, 422, The top surface of the recess of 431 protrudes to the lower side or is provided to protrude from the bottom surface of the concave portion to the upper side. In the diffusion space 422, 43 1 , Because it has a majority of the cylindrical portion 425, 43 2. 43 3, Therefore, although heat transfer is performed through this part, However, since there are fewer cylindrical portions 423 in the diffusion space 421, Therefore, the above tablet 41, 42 ways to easily transfer heat, Outside the cylindrical portion 42 3 previously described, Also provided is a column portion 424 -20- 200932945 protruding from the bottom surface of the recess to the upper flat plate; 42 5. 432, 433 and the upper end surface of the column portion 42 4 or the lower end surface, a flat plate 42 other than the recess The faces of 43 become the same surface (same height), Therefore, the cylindrical portion 423, 425, 432, Above 433, the end face or the lower end face, And the opposite plate 41, 43. The surface of 45 is in close contact ‘the flow inhibits the flow in the cylindrical portion 423, 425, 432, The gas in 433 leaks to the gas diffusion space 421, 422, 432. In the above, The gas diffusion space 421 previously described in each of the plates 41 to 45, 422, 431, 411, 441 Gas introduction path 511, 521, 531, 541, 542, Gas supply path 512, 522, 532, 543 is the first to third process gases (Sr source gas, The Ti source gas and the ozone gas are independent of each other to constitute a gas flow path for supply to the processing environment. On each of the flat plates 41 to 45 of the gas shower head 4 described above, As shown in Figure 3, Figure 4 is shown by several representatives. Wearing bolt holes 81a to 84a for concluding each other, 81b~84b. Using the bolt holes 81a to φ 84a, 81b~84b, For example, as shown in Figure 2, The flat plate 41 and the flat plate 42 are joined by the bolt 81, After the center of the flat plate 43 and the center of the center side flat plate 45 are joined by the bolts 82, The flat plate 43 is joined to the lower side of the flat plate 42 by bolts 83. Finally, the peripheral side flat plate 44 is joined to the lower side of the flat plate 43 by bolts 84. The gas shower head 4 is not shown in Fig. 4. and, The bolts 81 to 84 are exemplified for omitting a part of the bolts of the members 41 to 45 which are connected to the gas shower head 4, for example. In fact, the members 41 to 45 are strongly joined by a larger number of bolts. Furthermore, In order to facilitate the drawing, In Figure 3, In Fig. 4, 'omitted snails -21 - 200932945, check holes 81a to 84a, Record of 81b~84b. Furthermore, In the gas introduction path 511, 521, 541 in the gas diffusion space 421, 422, 41 1, Part of 44〗 Large expansion section. In detail, For the first gas introduction path, as shown by the representative of (a), The first gas introduction path 511 5 1 1 a is formed, for example, in a circular tube shape. Broken road surface of the opening 5 1 1 a ί r22: R2 is the radius of the open circuit) becomes the first gas introduction path φ area eight 1 (= redundant 1 " 12: |*1 is the radius of the disconnection) and constitutes a surface of the terminal portion of the terminal 5 1 1 a of the first gas introduction path 511 in a hypothetical manner (the side of the mouth portion 511a in the dotted line in Fig. 5(a)) The angle formed by the face is 30°. If the diameter is increased by the setting, Gas can be introduced from the gas introduction path 511, 542 is more likely to diffuse into the gas diffusion space 421, 422, ^ 〇 Again, φ 512 formed on the central side plate 4 5 of the fourth segment, 522 and 532, As shown in Figure 5(b), When the diameter of the lower side portion of the side gas supply surface 40a is smaller than that of the upper one, The diameter of the upper part is "Ll = the diameter of the side part is "L2 = 1 mm", The length of the lower part is 5mm". As a result, By reducing the diameter of the lower side portion of the gas supply path 512, The processing gas or flushing gas (Peclet number) Pe supplied from the supply channels 512 to the processing environment 10 may be increased. It is possible to prevent the diffusion space 421 of the processing gas or the like supplied to the crucible, 422, 431 invasion, 542 opening, The formation of the extension 5 1 1 is approximately twice the opening of the fifth and its opening ( 2 ( = π 5 1 1 , And the opening and opening parts), And open this, Borrow, 521, 541 m, The gas supply path in 441 is open at the center side. When 2mm", The lower degree is "H = , 522 ' 532 , 522, 532 Becker number i environment ίο. In this implementation -22- 200932945 type, Although the gas supply path 512 in the period of, for example, the process gas supply is not performed, 522, 5 32 flowing a small amount of flushing gas, However, the Becker number at the time of flowing the flushing gas becomes "Pe220". Set the diameter of the lower part. here, Pe=Vs· H/D, Vs is a flowing gas supply path 512, 522, 5 3 2 The flow rate of the flushing gas in the lower side portion, D is the diffusion constant of the treatment gas to the flushing gas. here, In this embodiment, Although using Sr raw material gas, Ti raw material gas, 3 @process gas of ozone gas', but the diffusion constant D of the treatment gas used when calculating the Becker number Pe, It is also possible to prevent the reverse diffusion of the Sr source gas or the Ti source gas which is small for the diffusion constant by using 値' of the ozone gas having the largest diffusion constant. The gas supply path 512 having the configuration, 522, The 532 is opened at the center side gas supply surface 40a below the center side flat plate 45, As shown in Figure 7, Each of the Sr material gas supply holes 51b, Ti material gas supply hole 52b, Ozone gas supply hole 53b. For the sake of explanation, The gas supply holes 5 1 b to 5 3 b shown in Fig. 7 can be identified by a symbol. The group of the Sr source gas supply holes 51b for supplying the Sr source gas is indicated by the symbol "", and the group of the Ti source gas supply holes 5 2b for supplying the Ti source gas is marked with "〇". The group of ozone gas supply holes 53b for ozone gas supply is marked with "#". The arrangement position on the center side gas supply surface 40a is indicated. here, As shown by the gas shower head 4, When a film is formed by supplying a plurality of gas supply holes 51b to 53b' to the gas supply holes 51b to 53b' of the center side gas supply surface 4a of the wafer W, The gas supply holes 51b-23 to 200932945 to 53b are spaced apart from each other (hereinafter referred to as a pitch) or a distance from the surface of the wafer W placed on the mounting table 3 to the center side gas supply surface 40a of the gas shower head 4 (below) The term "gap" affects the in-plane uniformity of the film or film thickness. That is, When the gap is from the surface of the wafer W to the center side gas supply surface 40a, When the distance between the gas supply holes 51b to 53b supplying the same type of process gas is large, Before the processing gas supplied from each of the gas supply holes 51b to 53b is sufficiently diffused to form a processing gas atmosphere equal to the processing gas supplied from the side gas supply holes 51b to 53b, Reach to wafer W. the result, An area where a large amount of adsorption of the processing gas is formed in the surface of the wafer W and a small area are generated, Matching the arrangement pattern of the gas supply holes 51b to 53b, The film thickness is thinner, Or thickening phenomenon (below, This is referred to as transfer of the gas supply holes 51b to 53b. here, The film forming apparatus 1 according to this embodiment mode, As explained in Figure 1, The mounting table 3 can be raised and lowered to the processing position of the φ wafer W from the transfer position of the wafer W. The processing position is, for example, when the gap is the largest of "h = 40 mm" as shown in the first diagram (a). As shown in Figure 10(b), When it is the smallest of "h=8mm", It is possible to change the processing position in the up and down direction. The processing position is, for example, a processing program that specifies a film forming condition. It is determined by the method of selecting the most appropriate location to be remembered in advance, etc. However, from the viewpoint of suppression of the use amount of each raw material gas, It is strongly required to perform film formation as much as possible at a processing position where the gap is short. here, In the gas shower head 4 according to the present embodiment, the method of transferring -24-200932945 can be suppressed even when the processing is performed at the position where the gap h is the smallest. As far as possible, the distance between the gas supply holes 51b to 53b is minimized. That is, The central side gas supply surface 40a is divided into unit sections 401 composed of equilateral triangles of the same size, In the three vertices of the regular triangles constituting the unit division 40 1 , Each of the Sr material gas supply holes 5 1b is distributed, Ti material gas supply hole 52b, Ozone gas supply hole 53b, The plurality of gas supply holes 51b to 53b are arranged on the center side gas supply surface 40a. ^ and, In more detail, In Fig. 8, for example, an ozone gas supply hole 53b is allocated to the apex A of the triangle ABC, For example, the Sr raw material gas supply hole 5b is distributed at the vertex B, For example, the Ti source gas supply hole 52b is distributed at the vertex C. Then, when a line-symmetric triangular BCD is drawn on the side BC of the triangle ABC, Then, the ozone gas supply hole 5 3 b of the vertex A symmetrical with the line is assigned to the vertex D. In the same situation, Even for the sides AB of the triangle AB C, AC execution, The Ti material gas supply hole 52b is distributed at the vertex E, The Sr material gas supply hole 51b is distributed at the vertex F. the following, The gas supply hole 40a of the gas Q-body shower head 4 is repeated to form a gas supply hole for each process gas. If by this, There are three types of gas holes in the unit area 4 01. That is, the distribution density of the three types of gas holes is the same. and, The distances between adjacent gas holes of the respective gas types are equal (as described later for all three types of gas holes, /*31), All gas species are evenly discharged into the processing environment 10. here, As shown in Figure 5(b), For example, each gas supply path 512, 522, When the diameter of the upper portion of 532 is "Ll=2mm", By working accuracy or adjacent gas supply path 512, 522, 532 required walls -25- 200932945 thickness and other points of view, Adjacent gas supply paths 512, 522, 532 The distance from each other, for example, about 7 mm is the processing limit. at this time, As shown in Figure 7, The length 1 of one side of the unit division 401 is 7 mm. Therefore, the distance between the ozone gas supply holes 53b is "a = (in 3) 1", About 1 2mm, This distance is the minimum distance that can be made. Furthermore, If by such a method, It can be said that for other gas supply holes 5 1 b, 5 2b and the distance between them is also the minimum distance that can be made. Therefore, Figure 7, The arrangement method shown in the 8th φ diagram is even when the gap h is the smallest. It is also difficult to arrange the transfer of the gas supply holes 51b to 53b. According to the gas hole arrangement method of Fig. 8 described above, In, for example, the vertices of the regular square, Assign 4 different gas types, Then, if the square is symmetrically drawn on each side of the square, When the gas holes of each gas type are assigned, the distribution density of the gas holes of the four types is equal. It is possible to make a shower head having the same distance between adjacent gas holes of each gas type. And can be applied to positive polygons (normal pentagons, Positive hexagon, etc.) (at this time, Each φ is supplied with five types of processing gases, 6 types of processing gases). In addition, For the arrangement of the gas supply holes 51b to 53b in the center side gas supply surface 40a, The arrangement of the flushing gas supply holes of the peripheral side gas supply surface 40b formed on the lower side of the peripheral side flat plate 44, It is only set to supply flushing gas for the purpose, Therefore, it is not possible to use the special arrangement described in Fig. 8. E.g, When the second figure is viewed from the upper side of the peripheral flat plate 44, the entire bottom surface of the concave portion constituting the fifth diffusion space 441 is Uniform configuration 4th gas supply path 5 43, So that the required amount of flushing gas is not biased toward the peripheral region 1 Ob, It can be arranged in a uniform manner. -26- 200932945 Next, The configuration of the supply pipe for the process gas or the flushing gas of the gas shower head 4 will be described. The respective guide turns 51a to 54a on the uppermost flat plate 41 are as shown in Fig. 4, Connecting gas supply lines 610 to 640 for supplying various gases, The first introduction port 51a is connected to the Sr material gas supply line 610. The second introduction port 52a is connected to the Ti raw material supply line 620, The third introduction port 53a is connected to the ozone gas supply line 630. Further, the fourth inlet port 54a is connected to the flushing gas supply pipe φ line 640. and, The gas supply lines 610 to 640 are as shown in the gas supply path diagram of Fig. 6, Various supply sources 6 1 to 6 4 are connected to the upstream side. Specifically, 'Sr raw material gas supply line 610 is connected to Sr raw material supply source 61'. The supply source 61 stores, for example, Sr(THD) 2 (Strotium bis ( Tetramethylheptanedionate) or a liquid Sr raw material such as Sr(Me5Cp)2(penta-methylcyclopentadienyl Strontium), the Sr raw material is pushed to the supply pipe, The gas material is supplied to the Sr material gas supply line 610 by vaporization of the gasifier 611.
Ti原料氣體供給管線620係與Ti原料供給源62連接 ’在該供給源62貯存有例如Ti(OiPr)2(THD)2(titanium bis(isopropoxide)bis(2,2,6,6-tetramethyl-3,5-heptanedionate))或 Ti(OiPr)(Titanium Tetraisopropoxide ) 等之Ti原料’與Sr原料之情形相同，使供給藉由氣化器 621被氣化之Ti原料氣體。 再者’臭氧氣體供給管線630係連接例如藉由眾知之 臭氧產生器等所構成之臭氧氣體供給源63，並且沖洗氣體 -27- 200932945 供給管線640係連接藉由氬氣瓶等所構成之沖 源64’可以將臭氧氣體及氬氣體供給至各個伊 、640。再者’ Sr原料氣體供給管線610、Ti 給管線620、臭氧氣體供給管線63 0各在路徑 而與沖洗氣體供給源64連接，可以替換各個 供給沖洗氣體。再者，在各氣體供給管線61( 體供給源6 1〜64之間，介設有由閥、流量計 ❹ 流量控制機器群6 5，根據由後述控制部7之指 種氣體之供給時序及供給量。並且，各氣體供 〜640雖然連接於第2圖所示之11個導入埠 有，但是在第1圖或第6圖等中省略記載導入 之數量。 當返回至成膜裝置1之裝置構成之說明時 淋頭4之上面或排氣導管21之外壁面之下面 等，如第1圖所示般設置有薄片狀之電阻發 Q 之噴淋頭加熱器47或導管加熱器213，藉由 給之電力加熱氣體噴淋頭4或排氣導管21全 以防止反應物附著於氣體噴淋頭4之氣體供！ 氣導管21內面。並且，爲了便於圖示，除第 略加熱器47、213之記載。並且，除上述所記 用以防止反應物附著之加熱器雖然也被埋設在 塊26內，但是爲了便於說明省略圖示。 以上所說明之成膜裝置1具備有控制部： 來自先前所述之氣體供給源6 1〜63之氣體供 洗氣體供給 :給管線6 3 0 原料氣體供 之途中分歧 處理氣體以 >〜6 4 0和氣 等所構成之 示，控制各 給管線6 1 0 51a〜54a所 埠5 1 a〜54a ，在氣體噴 側及上面側 體等所構成 I源部68供 體，依此可 ί面4 0或排 1圖以外省 載者之外， 例如內部區 『，用以控制 給動作、工 -28- 200932945 作台31之升降動作，或藉由真空泵67所產生之處理容器 2內之排氣動作、藉由各加熱器47、213所產生之加熱動 作等。控制部7係由具備有例如無圖示之CPU和程式之 電腦所構成，在該程式安裝有針對爲了藉由該成膜裝置1 對晶圓W執行成膜處理所需之控制，例如來自氣體供給 源61〜64之各種氣體供給之供給中斷時序或有關供給量 調整之控制、調節處理容器2內之真空度之控制、工作台 i 31之升降動作控制或各加熱器47、213之溫度控制等之步 〇 驟（命令）群。該程式係被儲存於例如硬碟、CD、光磁性 碟、記億卡等之記憶媒體，自此被安裝於電腦。以下，針 對採用如此之氣體噴淋頭4之成膜裝置1之動作予以說明 〇 首先，如第9圖所示般，打開搬運口 28，藉由搬運口 28使外部之搬運機構進入，而將晶圓W搬入至處理容器 2內。接著，經由升降銷35，將晶圓W載置在位於交接 Q 位置之載置台3上而藉由無圖示之靜電夾具吸附該晶圓W 。此時，藉由各加熱器213、47等，排氣導管21或內部 區塊26之表面各被加熱至例如23 0°C，再者，氣體噴淋頭 4之氣體供給面40被加熱至例如250°C。接著，關閉搬運 口 28使處理容器2內成爲氣密狀態之後，藉由真空泵67 經排氣導管2 1使處理容器2內成爲真空狀態。 此時，如先前所述般，內部區塊26因固定於高於晶 圓W之交接位置的位置，故如第9圖所示般，在將載置 台3下降至晶圓W之交接位置的狀態下，下側容器22內 -29- 200932945 之空間成爲與處理環境10連通（不被區劃）之狀態。因 此，在上述真空排氣中，包含下側容器22內之處理容器2 內全體被真空排氣。 處理容器2內被真空排氣至特定壓力時，在持續真空 排氣之狀態下將載置晶圓W之載置台3，自按處理程式所 選擇之處理位置，例如第1 〇圖（a )所示之間隙「h = 40mm」之處理位置，上升至第10圖（b )所示之間隙「h @ = 8mm」之處理位置爲止之間的事先預定位置。在此，當 使載置台3上升至處理位置時，則例如第1 0圖（a )或第 1 0圖（b )所示般，自工作台蓋3 2之側周面或是自該側周 面延伸之裙部321成爲被內部區塊26包圍之狀態，載置 台3上方之處理環境1 0和下側空間22內之空間藉由載置 台3及內部區塊26被遮蔽而成爲互相區劃之狀態。 如此一來，由於處理環境10和下側容器22內之空間 被區劃，故藉由沖洗氣體供給路222開始將沖洗氣體導入 Q 至下側容器22內。然後，藉由工作台加熱器33晶圓W 之溫度加熱至例如280°C之後，開始STO之成膜處理。並 且，在第9圖、第10圖（a)、第1〇圖（b)中，爲了便 於圖示，省略工作台加熱器33之記載。再者，在以下之 動作說明中，晶圓W之處理位置以第10圖（b )所示之 間隙「h = 8mm」之時爲例進行說明。 藉由ALD製程所產生之STO成膜處理係根據第11圖 (a)〜第11圖（d)所示之氣體供給順序而實行。第Π 圖（a)〜第11圖（c)之各圖所示之空白柱表示來自各 -30- 200932945 氣體供給管線610〜630之處理氣體（Sr原料氣體 料氣體、臭氧氣體）之供給量，再者，第11圖（{ 11圖（d)之塗有斜剖面線的柱係表示來自各氣體 線610〜640之沖洗氣體之供給量。再者，第I〗圖 圖係模式性表不該些順序時行中的氣體噴淋頭4內 環境10之各氣體之流動。 若依據氣體供給順序時，則如第1 1圖（a )戶斤 ❹ 首先執订Sr原料氣體之供給（Sr原料體供給工程 時’在氣體噴淋頭4內中，Sr原料氣體係如第η 般’通過第1氣體導入路511而擴散至第1擴散空 內，通過多數設置在第1擴散空間42 1底面之第1 給路512，自中央側氣體供給面40a之各Sr原料氣 孔51b(參照第7圖）供給至處理環境1〇之中央區 〇 如此一來，Sr原料氣體自氣體噴淋頭4之中央 Q 供給面40a被供給至處理環境1 〇內之中央區域1〇a 達至載置台3上之晶圓W之中央部。此時如第】 般，在處理環境10之周圍被設置在排氣導管21之 氣口 211因被配置成包圍該處理環境10，故到達 W中央部之原料氣體朝向該些真空排氣口 211而自 之中央部流至周緣部。如此一來，藉由原料氣體從, 之中央部流至周緣部，原料氣體之移動距離變短， 各原料氣體之分子均勻吸附於晶圓W之徑方向。 再者，此時如第11圖（b)〜（d)及第12圖 、Ti原 I )〜第 供給管 〜第15 及處理 示般， )。此 圖所示 :間 4 2 1 氣體供 體供給 【域1 0 a 側氣體 ，而到 圖所示 真空排 至晶圓 晶圓W f日圓W 可以使 所示般 -31 - 200932945 ，爲了防止原料氣體之逆流，自第2氣體供給路522、第 3氣體供給路532及第4氣體導入路541流出少量之沖洗 氣體。另外，自第1圖所示之下側容器22之沖洗氣體供 給路222所供給之沖洗氣體，係通過載置台3和內部區塊 26之間隙而進入至處理環境1 〇內，依此抑制原料氣體流 入下側容器22內之空間，防止因反應物附著形成附著物 。自該載置台3和內部區塊2 6之間隙供給沖洗氣體係於 0 氣體供給順序之實行中，持續執行。 如此一來，經過特定時間，在晶圓W上形成Sr原料 氣體之吸附層時，停止供給各原料氣體，如第11圖（a) 〜第11圖（d)所示般，自Sr原料氣體供給管線61〇及 沖洗氣體供給管線640供給沖洗氣體，沖洗處理環境10 以及殘存於氣體噴淋頭4內部之Sr原料氣體（Sr原料氣 體沖洗工程）。此時，在氣體噴淋頭4內，自Sr原料氣 體供給管線6 1 0所供給之沖洗氣體如第1 3圖所示般，經 φ 過與先前所述之Sr原料氣體相同之路徑，被供給至處理 環境10之中央區域10a。另外，藉由沖洗氣體供給管線 640所供給之沖洗氣體係經第4氣體導入路541—第4擴 散空間41 1—第5氣體導入路542 ’到達至環狀之第5擴 散空間441，通過多數設置在該底面之第4氣體供給路 5 43而被供給至處理環境10之周緣區域l〇b。 如此一來因處理容器2內之處理環境10係同時供給 沖洗氣體至中央區域l〇a和周緣區域l〇b雙方，故比起例 如僅供給沖洗氣體至該些區域中之一方之時，沖洗氣體量 -32- 200932945 變多，可以短時間結束原料氣體之沖洗。並且，如第u 圖（b) 、（c)及第13圖所示般，也自第2氣體供給路 5 22及第3氣體供給路53 2流出少量之沖洗氣體。 於結束來自處理環境10之Sr原料氣體之沖洗時，則 如第11圖（b)所示般，供給Ti原料氣體。Ti原料氣體 係如第14圖所示般，經過第2氣體導入路521—第2擴散 空間422—第3氣體供給路532而藉由中央側氣體供給面 φ 40a之各Ti原料氣體供給孔52b(參照第7圖）被供給至 處理環境10之中央區域10a’與Sr原料氣體之時相同， 自晶圓W中央部朝向周緣部流動而均勻吸附於該晶圓w 之徑方向。再者，如第11圖（a) 、( C ) 、 （d)及第14 圖所示般’自第1氣體供給路512、第3氣體供給路532 及第4氣體導入路541流出少量之沖洗氣體，防止原料氣 體之逆流。 接著，如先前所述之第13圖所示般，雖然執行藉由 0 沖洗氣體執行沖洗氣體噴淋頭4內及來自處理環境1〇之 Ti原料氣體（Ti原料氣體沖洗工程），但是如第11圖（ b) 、（d)所示般，主要執行來自Ti原料氣體供給管線 620和沖洗氣體供給管線640之沖洗氣體供給，另外如第 11圖（a) 、（c)所示般，自Sr原料氣體供給管線610 、臭氧氣體供給管線630執行供給以防止原料氣體逆流爲 目的之少量沖洗氣體各至第1氣體供給路512、第3氣體 供給路5 3 2之點，則與先前所述之Sr原料氣體沖洗工程 有所不同。 -33- 200932945 如此一來’當結束供給Sr原料氣體、Ti原料氣體以 及各個沖洗時，則如第1 1圖（c )所示般，執行自臭氧氣 體供給管線630供給臭氧氣體（臭氧氣體供給工程）。此 時’臭氧氣體如第圖所不般，通過氣體噴淋頭*之第3 氣體導入路53 1而擴散至第3擴散空間431內，通過多數 設置在該第3擴散空間431底面之第3氣體供給路53 2， 自中央側氣體供給面40a之各臭氧氣體供給孔531)(參照 禮^第7圖）供給至處理環境10之中央區域10a。並且，此時 如第11圖（a) 、（ b) 、（ d)所示般，自Sr原料氣體 供給管線610、Ti原料氣體供給管線620、沖洗氣體供給 管線640供給少量沖洗，防止臭氧氣體進入至氣體噴淋頭 4內。 其結果’在處理環境10內到達至晶圓W表面之臭氧ι ，藉由已吸附於晶圓W表面之原料氣體和來自工作台加 熱器32之熱能反應，形成STO之分子層。如此一來，當 Q 以特定時間供給臭氧氣體時，則停止臭氧氣體之供給，如 第11圖（C)、第11圖（d)及第13圖所示般，自臭氧 氣體供給管線630、沖洗氣體供給管線640供給沖洗氣體 ，沖洗殘存於處理環境10以及氣體噴淋頭4內部之臭氧 氣體（臭氧氣體沖洗工程）。再者，此時也如第11圖（a )、第11圖（b)所示般，自第1氣體供給路512、第2 氣體供給路522流出少量之沖洗氣體。 如第1 1圖所示般，當將以上說明之6個工程設爲1 循環時，事先決定該循環之次數，例如100次重複，將 -34- 200932945 sτο之分子層予以多層化，完成具備有特定膜厚之STO膜 之成膜。如此一來，在Sr原料氣體供給工程〜臭氧氣體 沖洗工程之各工程中，也必須自原本以大流量流通之氣體 流路以外之氣體流路流通小流量之沖洗氣體。然後’當完 成成膜時則停止供給各種氣體，使載置晶圓w之載置台3 下降至搬運口 28，使處理容器2內之壓力返回至真空排氣 前之狀態之後，在與搬入時相反之路徑’藉由外部之搬運 H 機構搬出晶圓W，結束一連串之成膜動作。 藉由以上說明之動作，執行STO膜之成膜的本實施型 態所涉及之成膜裝置1中，將3種類之處理氣體及沖洗氣 體供給至處理環境10之中央區域l〇a之中央側平板45, 和將沖洗氣體供給至處理環境10之周緣區域l〇b之周緣 側平板44，係如第2圖所示般藉由不同構件所構成。然後 ，該些平板44、45係藉由螺栓83、84被固定於上段側之 平板41〜43 (以下，將該些上段側之平板稱爲氣體噴淋頭 φ 本體（氣體供給裝置本體）4a)，故中央側平板45、周緣 側平板44可以因應所需各自氣體噴淋頭本體4a拆卸。 在此，例如第5圖（b )中所說明般，形成在中央側 平板45之氣體供給路512、522、532之下側部分之口徑 L2爲了防止處理氣體逆擴散至上流側之擴散空間42 i、 42 2、431等’將不執行供給處理氣體之期間中流動於氣體 供給路512、522、532之少量沖洗氣體之貝克勒數設定成 「Pe220」。該貝克勒數根據！)6：=¥8· h/D之定義式，藉 由流通氣體供給路512、522、532之下側部分之沖洗氣體 -35- 200932945 之流速Vs、該下側部分之長度Η、相對於沖洗氣 氣體之擴散常數D而決定，但是例如於變更處理 等，則產生必須改變氣體供給路512、522、532 分之口徑L2或高度Η。 例如，現在使用之中央側平板4 5之氣體供雜 522、53 2根據相對於3種類之處理氣體中最容易 氧氣體之沖洗氣體的擴散常數D，算出貝克勒數 0 足「Peg 20」之條件之方式，決定用以決定下側 度Η或氣體流速Vs之口徑L2。 此時，例如隨著原料氣體（Sr原料氣體或Ί 體）之變更，即使針對酸性氣體，例如當產生需 氣體變更成水蒸氣之時，水蒸氣因僅有臭氧氣體 一左右之分子量’故有相對於沖洗氣體之擴散係 虞。其結果，相對於流通氣體供給路5 1 2、5 22、 洗氣體之水蒸氣之貝克勒數P e變小，無法滿足 0 氣體之逆擴散所需之「Pe 2 20」之條件。 於此時，也考慮例如藉由增加沖洗氣體之供 大氣體流速Vs，進而增大貝克勒數Pe之手法。 例如第1 1圖（a)〜第1 1圖（c )之原料氣體供 臭氧氣體供給工程中’在其他氣體供給路中供給 之期間中，因自不執行處理氣體之供給之氣體供 供給少量之沖洗氣體，故當以增大貝克勒數pe 加沖洗氣體之供給量時’則對成膜結果造成壞影 ’爲了不用改變沖洗氣體之供給量，增大氣體济 體之處理 氣體之時 之下側部 •路 512、 擴散之臭 P e，以滿 部分之長 Μ原料氣 要將臭氧 之三分之 數變大之 532之沖 防止處理 給量，增 但是，在 給工程或 處理氣體 給路執行 爲目的增 響。因此 :速 Vs， -36- Ο ❹ 200932945 產生縮小氣體供給路512、522、5 32之下側部 L2，或增長下側部分之長度Η之必要性。 如此之時，本實施型態所涉及之中央側平板 成自氣體噴淋頭本體（氣體供給裝置本體）4a裝 故如第16圖（a)〜第1 6圖（c )模式性所示搬 供給路512、522、532之下側部分中之口徑大的 氣體用之中央側平板45(第16圖（a))，自氣 本體4a拆下，交換成下側部分之口徑小的新中 45a (第16圖（b))，構成具備有對應於新處 中央側平板45a之氣體噴淋頭4(第16圖（c) ，於無法充分確保下側部分之長度Η時，在本實 涉及之成膜裝置1中，如第1〇圖（a) 、（b) 因間隙可以改變，故即使增厚中央側平板45之 。並且，在第16圖（a)〜第16圖（c)之各圖 方便，省略周緣側平板44中之第4氣體供給路 載。 以上，如在第16圖（a)〜第16圖（c)說 在所使用之中央側平板45變更成適合於新的條 ，即使在將該成膜裝置1運用於完全不同之製程 效。例如，即使在將用以形成實施型態中所示之 成膜裝置1，轉用於執行鈦酸鋇（BaTi03，以 BTO )膜之成膜之裝置時等，僅將至此所使用之 板45交換成適合於與Ba原料氣體、Ti原料氣體 體之性狀或供給量之具有氣體供給路51b〜53b 分之口徑 45因構 卸自如， ，將氣體 以往處理 體噴淋頭 央側平板 理氣體之 )。再者 施型態所 所示般， 厚度亦可 中，爲了 5 4 3之記 明般將現 件之手法 時也爲有 STO膜之 下略稱爲 中央側平 及氧化氣 之新的中 -37- 200932945 央側平板45a，亦可以將成膜裝置1適用於形成種類不同 之膜的製程。再者，亦可以轉用至藉由中央側平板45a供 給原料氣體和氧化氣體各以1種類合計兩種類之處理氣體 而執行成膜之成膜裝置1。此時，使用阻塞原料氣體用之 一方側之氣體供給路（第1氣體供給路512或是第2氣體 供給路522 )之中央側平板45a即可。 若藉由以上所說明之本實施型態所涉及之氣體噴淋頭 & 4時，則有以下之效果。在氣體噴淋頭本體4a設置有具備 有多數氣體供給路512、522、532之平板44、45，將該平 板44、45分割成主要供給處理氣體之中央側平板45及僅 供給沖洗氣體之周緣側平板44，並且，將供給處理氣體之 中央側平板45安裝成可對氣體噴淋頭本體（氣體供給裝 置本體）4a裝卸自如。因此，例如，於變更自中央側平板 45所供給之處理氣體之種類之時，或求出合適於其處理氣 體之種類或流量之適當的參數，配合該參數執行變更氣體 Q 供給孔之口徑等之時，因不交換平板44、45全體，若僅 交換中央側平板45即可，故比起一體構成平板44、45之 時，可以減少使用之材料，減少加工時間，並可以降低氣 體噴淋頭4之製作費用。 在此’交換中央側平板45之主要原因並不如上述般 限定於處理氣體之變更時，例如以增加處理氣體之流量時 ’降低中央側平板45之壓力爲目的等時，即使增大氣體 供給路512、522、532之口徑亦可。 並且’以裝卸自如構成平板之第1氣體供給板並不限 -38- 200932945 定於中央側平板4 5，即使以例如增加用以更縮短沖洗 之沖洗氣體供給量爲目的’將周緣側平板44交換成 沖洗氣體供給孔之大口徑者亦可。如此一來’即使針 緣側平板44若設爲可交換（裝卸自如）之構成時’ 平板44、45中，於變更自任一方所供給之處理氣體 含沖洗氣體）之種類或流量等之時，若自氣體供給裝 拆下變更所需之平板44、45而裝上新的平板44、45 @ ，另一方之平板44、45可以原樣使用，更加有利。 再者，如上述說明之氣體噴淋頭4般，分割中央 板45和周緣側平板44而構成，可適用於藉由設置在 平板44、45之氣體供給孔，可供給氣體種類或流量 之氣體之類型的氣體供給裝置，並不限定於實施型態 示之成膜裝置1。例如，先前技術所揭示之曰本 2006- 1 653 99號公報中記載之蝕刻裝置般，自氣體噴 下面之中央區域供給特定濃度之蝕刻氣體，另外自周 φ 域供給濃度高於來自中央區域之蝕刻氣體之蝕刻氣體 立調整自各個區域所供給之蝕刻氣體之流量的類型之 裝置也可以適用本發明所涉及之氣體供給裝置。即使 此之時’於產生必須變更中央區域、周緣區域中之任 的氣體供給孔之時，藉由變更僅變更所需之平板44、 則可以降低平板4 4、4 5之製作費用。 【圖式簡單說明】 第1圖爲實施型態所涉及之成膜裝置之縱剖面圖 時間 具有 對周 該些 (包 置僅 即可 側平 各個 不同 中所 特開 淋頭 緣區 ，獨 蝕刻 在如 一方 45 ， -39- 200932945 第2圖爲被設置在上述成膜裝置之氣體噴淋頭之分解 斜視圖。 第3圖爲上述氣體噴淋頭之縱斷斜視圖。 第4圖爲上述氣體噴淋頭之縱剖面圖。 第5圖爲氣體噴淋頭內之氣體導入路及氣體供給部份 之縱剖面圖。 第6圖爲上述成膜裝置之氣體供給路徑圖。 第7圖爲表示被設置在上述氣體噴淋頭之氣體供給口 之配列的平面圖。 第8圖爲表示上述氣體供給孔之配列之說明圖。 第9圖爲上述成膜裝置之第1動作說明圖。 第圖爲表示上述成膜裝置中之晶圓處理位置之說 明圖。 第11圖爲藉由上述成膜裝置之成膜處理中之氣體供 給順序圖。 第12圖爲上述成膜裝置之第2動作說明圖。 第13圖爲上述成膜裝置之第3動作說明圖。 第14圖爲上述成膜裝置之第4動作說明圖。 第15圖爲上述成膜裝置之第5動作說明圖。 第16圖爲上述氣體噴淋頭之作用圖。 【主要元件符號說明】 1 :成膜裝置 2 :處理容器 -40- 200932945 3 :載置台 4 =氣體噴淋頭 4a :氣體供給裝置本體 7 :控制部 10 :處理環境 1 0 a :中央區域 1 0 b :周緣區域 2 1 :排氣導管 22 :下側容器 23 :升降板 24 :波紋管 25 :支撐構件 26 :內部區塊 27 :檔環（baffle ring) 28 :搬運口 29 :排氣管 3 1 :工作台 3 2 :工作台蓋 3 3 :工作台加熱器 34 :支撐構件 35 :升降銷 3 6 :升降構件 40 :周緣側氣體供給面 41 :平板 -41 200932945 41a :凸緣部 4 2 :平板 43 :平板 44 :氣體供給板 45 :氣體供給板 4 5 a :中央側平板 47:噴淋頭加熱器 5 1 a :第1導入埠 5 2 a :第2導入埠 5 3 a :第3導入埠 5 4 a :第4導入埠 61 : Sr原料供給源 62 : Ti原料供給源 63 :臭氧氣體供給源 64 :沖洗氣體供給源 65 :流量控制機器群 66 :沖洗氣體供給源 67 :真空泵 6 8 :電源部 69 :升降機構 81a〜84a:螺栓孔 81b〜84b:螺栓孔 8 1-84 ：螺栓 2 1 1 :真空排氣口 -42 200932945 212 ： 213 ： 221 ： 222 · 223 ： 252 ： 261 ：The Ti source gas supply line 620 is connected to the Ti raw material supply source 62. At the supply source 62, for example, Ti(OiPr) 2(THD) 2 (titanium bis (isopropoxide) bis (2, 2, 6, 6-tetramethyl-) is stored. The Ti raw material of 3,5-heptanedionate)) or Ti(OiPr) (Titanium Tetraisopropoxide) is supplied in the same manner as the Sr raw material, and the Ti raw material gas which is vaporized by the gasifier 621 is supplied. Further, the 'ozone gas supply line 630 is connected to an ozone gas supply source 63 constituted by, for example, a known ozone generator, and the flushing gas -27-200932945 supply line 640 is connected by an argon gas cylinder or the like. The source 64' can supply ozone gas and argon gas to each of the illuminators 640. Further, the 'Sr material gas supply line 610, the Ti supply line 620, and the ozone gas supply line 63 0 are connected to the flushing gas supply source 64 in the respective paths, and the respective supply flushing gases can be replaced. Further, in each of the gas supply lines 61 (between the body supply sources 6 1 to 64, a valve, a flow meter, a flow rate control device group 65, and a supply timing of the gas to be introduced by the control unit 7 to be described later) In addition, the gas supply unit 640 is connected to the 11 introduction ports shown in Fig. 2, but the number of introductions is omitted in Fig. 1 or Fig. 6 and the like. In the description of the configuration of the apparatus, the top surface of the shower head 4 or the lower surface of the outer wall surface of the exhaust duct 21, as shown in Fig. 1, is provided with a sheet-like nozzle heater 47 or a duct heater 213 having a resistance Q. The gas shower head 4 or the exhaust duct 21 is heated by the electric power to prevent the reactant from adhering to the gas supply side of the gas shower head 4, and, for convenience of illustration, the heater is omitted. In addition to the above, the heater for preventing the adhesion of the reactants is embedded in the block 26, but the illustration is omitted for convenience of explanation. The film forming apparatus 1 described above is provided with a control unit. : from the gas supply sources 6 1 to 63 previously described Gas supply gas supply: to the pipeline 6 3 0, the diverging process gas in the middle of the supply of the raw material gas is represented by >~6 4 0 and gas, etc., and control each of the supply lines 6 1 0 51a to 54a to 5 1 a to 54a The source of the I source portion 68 is formed on the gas jet side and the upper side body, and the like, in addition to the saver of the 40 or the 1 row, for example, the internal zone, for controlling the action, the work - 28-200932945 The lifting operation of the table 31, or the exhaust operation in the processing container 2 by the vacuum pump 67, the heating operation by the heaters 47 and 213, etc. The control unit 7 is provided with, for example. A computer including a CPU and a program (not shown) is mounted with control for performing film formation processing on the wafer W by the film forming apparatus 1, for example, various gases from gas supply sources 61 to 64. The supply interruption timing or the control of the supply amount adjustment, the control of the degree of vacuum in the processing container 2, the lifting operation control of the table i 31, or the temperature control of each heater 47, 213, etc. (command) Group. The program is stored in, for example, A memory medium such as a disc, a CD, a magneto-optical disc, or a card is installed in a computer. Hereinafter, the operation of the film forming apparatus 1 using such a gas shower head 4 will be described. First, as shown in FIG. As shown, the transfer port 28 is opened, and the external transfer mechanism is moved by the transfer port 28, and the wafer W is carried into the processing container 2. Then, the wafer W is placed on the transfer Q via the lift pin 35. The wafer is placed on the mounting table 3 by an electrostatic chuck (not shown). At this time, the surfaces of the exhaust duct 21 or the inner block 26 are heated to, for example, the heaters 213, 47 and the like. At 23 ° C, the gas supply surface 40 of the gas shower head 4 is heated to, for example, 250 °C. Then, the inside of the processing container 2 is closed in an airtight state, and the inside of the processing container 2 is brought into a vacuum state via the exhaust duct 2 1 by the vacuum pump 67. At this time, as described above, since the inner block 26 is fixed at a position higher than the transfer position of the wafer W, as shown in FIG. 9, the mounting stage 3 is lowered to the transfer position of the wafer W. In the state, the space in the lower container 22 from -29 to 200932945 is in a state of being in communication with the processing environment 10 (not being zoned). Therefore, in the vacuum evacuation, the entire inside of the processing container 2 including the lower container 22 is evacuated. When the inside of the processing container 2 is evacuated to a specific pressure, the mounting table 3 on which the wafer W is placed is continuously evacuated, and the processing position selected by the processing program is selected, for example, the first drawing (a). The processing position of the gap "h = 40 mm" shown is raised to the predetermined position between the processing positions of the gap "h @ = 8 mm" shown in Fig. 10(b). Here, when the mounting table 3 is raised to the processing position, for example, as shown in FIG. 10(a) or FIG. 10(b), the peripheral surface from the side of the table cover 32 or from the side The skirt portion 321 extending on the circumferential surface is surrounded by the inner block 26, and the space in the processing environment 10 and the lower space 22 above the mounting table 3 is shielded by the mounting table 3 and the inner block 26 to form a mutual division. State. As a result, since the processing environment 10 and the space in the lower container 22 are partitioned, the flushing gas is introduced into the lower container 22 by the flushing gas supply path 222. Then, after the temperature of the wafer W of the stage heater 33 is heated to, for example, 280 ° C, the film formation process of STO is started. Further, in Fig. 9, Fig. 10(a), and Fig. 1(b), the description of the table heater 33 is omitted for convenience of illustration. In the following description of the operation, the processing position of the wafer W will be described by taking the case where the gap "h = 8 mm" shown in Fig. 10(b) is taken as an example. The STO film formation process by the ALD process is carried out in accordance with the gas supply sequence shown in Figs. 11(a) to 11(d). The blank column shown in each of Figs. (a) to 11(c) shows the supply amount of the process gas (Sr material gas, ozone gas) from each of the gas supply lines 610 to 630 of -30-200932945. Further, in Fig. 11 (Fig. 11 (d), the column coated with the oblique hatching indicates the supply amount of the flushing gas from each of the gas lines 610 to 640. Further, the first graph is a pattern table. The flow of the gases in the environment 10 in the gas shower head 4 in the sequence is not required. If the gas supply sequence is used, the supply of the Sr material gas is first imposed as shown in Fig. 1(a). When the Sr raw material supply process is carried out, the Sr raw material gas system is diffused into the first diffusion space through the first gas introduction path 511 in the gas shower head 4, and is disposed in the first diffusion space 42 by a large number. The first feed path 512 of the bottom surface is supplied to the central portion of the processing environment 1 from the respective Sr material pores 51b (see Fig. 7) of the center side gas supply surface 40a. Thus, the Sr source gas is supplied from the gas shower head. The central Q supply surface 40a of 4 is supplied to the central area 1〇a in the processing environment 1 The central portion of the wafer W on the stage 3 is placed. At this time, the gas port 211 provided in the exhaust duct 21 around the processing environment 10 is arranged to surround the processing environment 10, so that it reaches the central portion of the W. The material gas flows from the central portion to the peripheral portion toward the vacuum exhaust ports 211. As a result, the moving distance of the material gas is shortened by the material gas flowing from the central portion to the peripheral portion, and the raw material gases are The molecules are uniformly adsorbed in the radial direction of the wafer W. Further, at this time, as shown in Figs. 11(b) to (d) and Fig. 12, Ti original I) to the first supply tube to the fifteenth and processing. This figure shows: between the 4 2 1 gas donor supply [domain 10 a side gas, and the vacuum discharge to the wafer wafer W f yen W as shown in the figure can be as shown -31 - 200932945, in order to prevent raw materials In the reverse flow of the gas, a small amount of the flushing gas flows out from the second gas supply path 522, the third gas supply path 532, and the fourth gas introduction path 541. Further, the flushing gas supplied from the flushing gas supply path 222 of the lower side container 22 shown in Fig. 1 enters the processing environment 1 through the gap between the mounting table 3 and the inner block 26, thereby suppressing the raw material. The gas flows into the space inside the lower container 22 to prevent adhesion due to adhesion of the reactants. The flushing gas system is supplied from the gap between the mounting table 3 and the inner block 26 in the execution of the gas supply sequence, and is continuously executed. As a result, when the adsorption layer of the Sr source gas is formed on the wafer W at a specific time, the supply of the respective material gases is stopped, as shown in FIGS. 11(a) to 11(d), from the Sr source gas. The supply line 61A and the flushing gas supply line 640 supply the flushing gas, and the processing environment 10 and the Sr material gas remaining in the gas shower head 4 (Sr material gas flushing process). At this time, in the gas shower head 4, the flushing gas supplied from the Sr material gas supply line 610 is the same as that of the Sr source gas described above, as shown in Fig. 3 It is supplied to the central area 10a of the processing environment 10. In addition, the flushing gas system supplied by the flushing gas supply line 640 reaches the fifth diffusion space 441 via the fourth gas introduction path 541 - the fourth diffusion space 41 1 - the fifth gas introduction path 542 ', and passes through the majority. The fourth gas supply path 543 provided on the bottom surface is supplied to the peripheral region 10b of the processing environment 10. In this way, since the processing environment 10 in the processing container 2 simultaneously supplies the flushing gas to both the central region 10a and the peripheral region 10b, it is flushed as compared with, for example, only supplying the flushing gas to one of the regions. The amount of gas -32- 200932945 is increased, and the flushing of the raw material gas can be completed in a short time. Further, as shown in Figs. (b), (c) and Fig. 13, a small amount of flushing gas is also discharged from the second gas supply path 522 and the third gas supply path 53 2 . When the flushing of the Sr source gas from the processing environment 10 is completed, the Ti source gas is supplied as shown in Fig. 11(b). As shown in Fig. 14, the Ti raw material gas system passes through the second gas introduction path 521 - the second diffusion space 422 - the third gas supply path 532, and each of the Ti source gas supply holes 52b of the center side gas supply surface φ 40a (Refer to Fig. 7) The central region 10a' supplied to the processing environment 10 is the same as the Sr source gas, and flows from the central portion of the wafer W toward the peripheral portion and is uniformly adsorbed in the radial direction of the wafer w. Further, as shown in FIGS. 11(a), (C), (d), and 14th, a small amount flows out from the first gas supply path 512, the third gas supply path 532, and the fourth gas introduction path 541. Flush the gas to prevent backflow of the material gas. Next, as shown in FIG. 13 as described above, although the Ti raw material gas (Ti raw material gas flushing process) in the flushing gas shower head 4 and from the processing environment is performed by the 0 flushing gas, as in the first embodiment, 11 (b) and (d), the flushing gas supply from the Ti source gas supply line 620 and the flushing gas supply line 640 is mainly performed, and as shown in Fig. 11 (a) and (c), The Sr source gas supply line 610 and the ozone gas supply line 630 are supplied to prevent the raw material gas from flowing back to the first gas supply path 512 and the third gas supply path 5 3 2 for the purpose of preventing backflow of the material gas. The Sr material gas flushing process is different. -33- 200932945 As described above, when the supply of the Sr source gas, the Ti source gas, and the respective flushes is completed, the ozone gas is supplied from the ozone gas supply line 630 as shown in Fig. 1(c). engineering). At this time, the ozone gas is diffused into the third diffusion space 431 through the third gas introduction path 53 1 of the gas shower head* as shown in the figure, and is provided in the third surface of the third diffusion space 431. The gas supply path 53 2 is supplied to the central region 10a of the processing environment 10 from the ozone gas supply holes 531) of the center side gas supply surface 40a (see FIG. 7). Further, at this time, as shown in Fig. 11 (a), (b), and (d), a small amount of flushing is supplied from the Sr source gas supply line 610, the Ti source gas supply line 620, and the flushing gas supply line 640 to prevent ozone gas. It enters the gas shower head 4. As a result, the ozone which reaches the surface of the wafer W in the processing environment 10 is reacted with the heat of the material gas adsorbed on the surface of the wafer W and the heat from the stage heater 32 to form a molecular layer of STO. In this way, when Q supplies ozone gas for a specific time, the supply of ozone gas is stopped, as shown in FIG. 11(C), FIG. 11(d) and FIG. 13, from the ozone gas supply line 630, The flushing gas supply line 640 supplies the flushing gas, and flushes the ozone gas remaining in the processing environment 10 and the inside of the gas shower head 4 (ozone gas flushing process). Further, at this time, as shown in Figs. 11(a) and 11(b), a small amount of the flushing gas flows out from the first gas supply path 512 and the second gas supply path 522. As shown in Fig. 1, when the six projects described above are set to one cycle, the number of cycles is determined in advance, for example, 100 repetitions, and the molecular layer of -34-200932945 sτο is multi-layered. Film formation of a STO film having a specific film thickness. In this way, in each of the Sr material gas supply engineering to the ozone gas flushing process, it is necessary to flow a small flow of flushing gas from a gas flow path other than the gas flow path originally flowing at a large flow rate. Then, when the film formation is completed, the supply of the various gases is stopped, the mounting table 3 on which the wafer w is placed is lowered to the conveyance port 28, and the pressure in the processing container 2 is returned to the state before the vacuum evacuation, and then The opposite path " carries out the wafer W by the external transport H mechanism, and ends a series of film formation operations. In the film forming apparatus 1 according to the present embodiment in which the film formation of the STO film is performed by the above-described operation, three types of processing gas and flushing gas are supplied to the center side of the central region 10a of the processing environment 10. The flat plate 45 and the peripheral side flat plate 44 for supplying the flushing gas to the peripheral region 10b of the processing environment 10 are constituted by different members as shown in Fig. 2. Then, the flat plates 44 and 45 are fixed to the flat plates 41 to 43 on the upper side by bolts 83 and 84 (hereinafter, the flat plates on the upper side are referred to as a gas shower head φ main body (gas supply device main body) 4a). Therefore, the center side flat plate 45 and the peripheral side flat plate 44 can be detached in response to the respective gas shower head bodies 4a required. Here, for example, as described in FIG. 5(b), the aperture L2 formed on the lower side portion of the gas supply paths 512, 522, and 532 of the center side flat plate 45 is for preventing the diffusion of the processing gas to the diffusion space 42 on the upstream side. i, 42 2, 431, etc. 'Becker number of a small amount of flushing gas flowing through the gas supply paths 512, 522, and 532 during the period in which the processing gas is not supplied is set to "Pe220". The Becker number is based! 6:=¥8·h/D is defined by the flow rate Vs of the flushing gas-35-200932945 at the lower side of the flow-through gas supply paths 512, 522, 532, the length of the lower side portion, relative to Although the diffusion constant D of the flushing gas is determined, for example, in the change processing or the like, it is necessary to change the diameter L2 or the height Η of the gas supply paths 512, 522, and 532. For example, the gas supply 522, 53 2 of the center side plate 45 used now calculates the Beckler number of 0 "Peg 20" based on the diffusion constant D of the flush gas of the most oxygen-prone gas among the three types of process gases. In the manner of the condition, the diameter L2 for determining the lower side or the gas flow rate Vs is determined. In this case, for example, when the source gas (Sr source gas or steroid) is changed, even if the acid gas is changed to water vapor, for example, when the water vapor is only a molecular weight of the ozone gas, A diffusion system relative to the flushing gas. As a result, the Becker number P e of the water vapor of the purge gas with respect to the flow-through gas supply path 5 1 2, 5 22 becomes small, and the condition of "Pe 2 20" required for the reverse diffusion of the gas of 0 cannot be satisfied. At this time, a method of increasing the Becker number Pe by, for example, increasing the flow rate Vs of the purge gas for the large gas is also considered. For example, in the raw material gas of the first to third (a) to the first (1)th (c), during the supply of the ozone gas supply project, the supply of the gas from the supply of the processing gas is not supplied. Flushing gas, so when increasing the Becker number pe plus the supply amount of the flushing gas, 'there is a bad shadow on the film formation result'. In order to increase the supply amount of the gas, the process gas of the gas body is increased. The lower side, the road 512, the diffuse smell P e, the full part of the long raw material gas to increase the three-thirds of the ozone to prevent the treatment of the amount, increase, but give the engineering or process gas The road execution is for the purpose of increasing the sound. Therefore, the speed Vs, -36- Ο ❹ 200932945, generates the necessity of narrowing the side portion L2 of the gas supply paths 512, 522, 5 32 or increasing the length of the lower side portion. In this case, the center side flat plate according to the present embodiment is configured to be moved from the gas shower head main body (gas supply device main body) 4a as shown in Figs. 16(a) to 16(c). The center side flat plate 45 (Fig. 16(a)) for the gas having a large diameter in the lower portion of the supply passages 512, 522, and 532 is removed from the gas main body 4a, and is exchanged to a new diameter of the lower portion. 45a (Fig. 16(b)), which is provided with a gas shower head 4 corresponding to the new center side flat plate 45a (Fig. 16(c), when the length of the lower side portion cannot be sufficiently ensured, In the film forming apparatus 1 according to the first aspect (a) and (b), since the gap can be changed, even if the center side flat plate 45 is thickened, and in Figs. 16(a) to 16(c) Each of the drawings is convenient, and the fourth gas supply path in the peripheral side flat plate 44 is omitted. As described above, in the sixteenth (a) to sixteenth (c), the center side flat plate 45 used is changed to be suitable for a new strip, even if the film forming apparatus 1 is applied to a completely different process. For example, even in the film forming apparatus 1 which will be used to form the embodiment When the apparatus for performing film formation of a barium titanate (BaTi03, BTO) film is used, only the plate 45 used so far is exchanged for the properties or supply amount suitable for the Ba source gas or the Ti source gas body. The gas supply passages 51b to 53b are separated from each other by a diameter 45, and the gas is supplied to the center of the nozzle of the conventional treatment body. In addition, as shown in the application mode, the thickness can also be in the middle. For the description of the 5 4 3, the current method is also a new medium under the STO film which is abbreviated as the central side and the oxidizing gas. 37- 200932945 The central side plate 45a can also be used to form a film forming apparatus 1 for forming a film of a different type. In addition, it is also possible to switch to the film forming apparatus 1 which performs film formation by supplying a processing gas of two types of a raw material gas and an oxidizing gas in total by the center side flat plate 45a. In this case, the center side flat plate 45a of the gas supply path (the first gas supply path 512 or the second gas supply path 522) on the one side for blocking the source gas may be used. According to the gas shower head & 4 of the present embodiment described above, the following effects are obtained. The gas shower head main body 4a is provided with flat plates 44 and 45 including a plurality of gas supply paths 512, 522, and 532, and the flat plates 44 and 45 are divided into a central side flat plate 45 mainly supplying a processing gas and a peripheral edge for supplying only the flushing gas. The side flat plate 44 is attached to the center side flat plate 45 to which the processing gas is supplied so as to be detachable from the gas shower head main body (gas supply device main body) 4a. Therefore, for example, when the type of the processing gas supplied from the center side flat plate 45 is changed, or an appropriate parameter suitable for the type or flow rate of the processing gas is determined, the diameter of the gas supply hole is changed in accordance with the parameter. In this case, since only the center side flat plates 45 are exchanged without exchanging the entire flat plates 44 and 45, the materials used can be reduced, the processing time can be reduced, and the gas spray can be reduced, compared to when the flat plates 44 and 45 are integrally formed. The production cost of the first 4th. Here, the reason why the central side plate 45 is exchanged is not limited to the case where the processing gas is changed as described above. For example, when the flow rate of the processing gas is increased, the pressure of the center side plate 45 is lowered, and the gas supply path is increased. The caliber of 512, 522, and 532 is also available. Further, the first gas supply plate constituting the flat plate is detachably attached to the center side plate 45, and the peripheral side plate 44 is used for the purpose of, for example, increasing the supply amount of the flushing gas for shortening the flushing. It is also possible to exchange a large diameter of the flushing gas supply hole. In this case, when the needle edge side flat plate 44 is configured to be exchangeable (disassembled), the type or flow rate of the processing gas containing the flushing gas supplied from either one of the flat plates 44 and 45 is changed. If the flat plates 44 and 45 required for the change are removed from the gas supply device and the new flat plates 44 and 45 @ are attached, the other flat plates 44 and 45 can be used as they are, which is more advantageous. Further, as in the gas shower head 4 described above, the center plate 45 and the peripheral side flat plate 44 are divided and configured, and the gas can be supplied to the gas type or flow rate by the gas supply holes provided in the flat plates 44 and 45. The gas supply device of the type is not limited to the film formation device 1 of the embodiment. For example, in the etching apparatus described in Japanese Laid-Open Patent Publication No. 2006-153653, a specific concentration of etching gas is supplied from a central region below the gas jet, and a supply concentration from the peripheral φ domain is higher than that from the central region. The gas supply device according to the present invention can also be applied to a device in which the etching gas of the etching gas is adjusted to the flow rate of the etching gas supplied from each region. At this time, when it is necessary to change the gas supply holes of any of the central area and the peripheral area, it is possible to reduce the manufacturing cost of the flat plates 4 4 and 45 by changing only the required flat plates 44. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a longitudinal section view of a film forming apparatus according to an embodiment of the present invention having a period of time (the package can be placed only to be flattened in each of the different regions of the head edge region, and the etching is performed separately. In the case of one side 45, -39- 200932945, Fig. 2 is an exploded perspective view of the gas shower head provided in the film forming apparatus. Fig. 3 is a longitudinal oblique view of the gas shower head. Fig. 5 is a longitudinal sectional view of a gas introduction path and a gas supply portion in a gas shower head. Fig. 6 is a gas supply path diagram of the film forming apparatus. Fig. 7 is a gas supply path diagram of the film forming apparatus. The plan view showing the arrangement of the gas supply ports of the gas shower head is shown in Fig. 8. Fig. 8 is an explanatory view showing the arrangement of the gas supply holes. Fig. 9 is a view showing the first operation of the film forming apparatus. Fig. 11 is a view showing a gas supply sequence in the film forming process by the film forming apparatus. Fig. 12 is a second operation description of the film forming apparatus. Figure 13. Figure 13 shows the above Fig. 14 is a fourth operation explanatory view of the film forming apparatus. Fig. 15 is a fifth operation explanatory view of the film forming apparatus. Fig. 16 is a view showing the action of the gas shower head. Fig. [Description of main component symbols] 1 : Film forming apparatus 2 : Processing container - 40 - 200932945 3 : Mounting table 4 = Gas shower head 4a : Gas supply device main body 7 : Control part 10 : Processing environment 1 0 a : Central Area 1 0 b : Peripheral area 2 1 : Exhaust duct 22 : Lower side container 23 : Lifting plate 24 : Bellows 25 : Support member 26 : Inner block 27 : Baffle ring 28 : Carrying port 29 : Row Air pipe 3 1 : Table 3 2 : Table cover 3 3 : Table heater 34 : Support member 35 : Lift pin 3 6 : Lifting member 40 : Peripheral side gas supply surface 41 : Flat plate - 41 200932945 41a : Flange Part 4 2 : Flat plate 43 : Flat plate 44 : Gas supply plate 45 : Gas supply plate 4 5 a : Center side flat plate 47 : Shower head heater 5 1 a : First introduction 埠 5 2 a : Second introduction 埠 5 3 a : 3rd introduction 埠 5 4 a : 4th introduction 埠 61 : Sr raw material supply source 62 : Ti raw material supply source 63 : Ozone gas supply source 64 : rushing Gas supply source 65: Flow rate control device group 66: Flush gas supply source 67: Vacuum pump 6 8: Power supply unit 69: Elevating mechanism 81a to 84a: Bolt holes 81b to 84b: Bolt hole 8 1-84: Bolt 2 1 1 : Vacuum Exhaust port -42 200932945 212 : 213 : 221 : 222 · 223 : 252 : 261 :
321 ： 4 11： 421 ·· 422 ： 423 ： 424 ： 425 ：321 : 4 11: 421 ·· 422 : 423 : 424 : 425 :
432 ： 43 3 ： 441 ： 5 11： 5 11a 512 ： 521 ： 522 ： 隔熱構件 加熱器 貫通孔 沖洗氣體供給路 側壁部 中間環體 區塊蓋 突起緣 裙部 第4擴散空間 第1擴散空間 第2擴散空間 筒狀部 柱部 筒狀部 第3擴散空間 筒狀部 筒狀部 第5擴散空間 第1氣體導入路 :開口部 氣體流路 第2氣體導入路 氣體流路 -43 200932945432 : 43 3 : 441 : 5 11: 5 11a 512 : 521 : 522 : Insulation member heater through hole flushing gas supply path side wall intermediate ring block cover projection edge skirt 4th diffusion space 1st diffusion space 2 diffusion space tubular portion cylindrical portion third diffusion space tubular portion tubular portion fifth diffusion space first gas introduction path: opening portion gas flow path second gas introduction path gas flow path -43 200932945
53 1： 5 32 ： 542 ： 543 ： 610 ： 620 ： 63 0 ： 640 ： 第3氣體導入路 氣體流路 第5氣體導入路 第4氣體供給路 Sr原料氣體供給管線 Ti原料氣體供給管線 臭氧氣體供給管線 沖洗氣體供給管線53 1: 5 32 : 542 : 543 : 610 : 620 : 63 0 : 640 : 3rd gas introduction path gas flow path 5th gas introduction path 4th gas supply path Sr raw material gas supply line Ti raw material gas supply line ozone gas supply Pipe flushing gas supply line
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