TW200414311A - Flow-type thin film deposition apparatus and injector assembly therefor - Google Patents

Abstract

Provided is a flow-type thin film deposition apparatus and an injector assembly for the same. The thin film deposition apparatus includes a chamber having a passage at one side thereof for allowing a wafer to come in and out therethrough and a chamber lid detachably fitted to the chamber, a reactor installed inside the chamber, and having a reactor body in which the wafer is received and a reactor lid placed upon the top of the reactor body, a wafer block detachably disposed inside the reactor for allowing the wafer to be mounted thereon and heating the wafer, a lid elevating unit for raising the reactor lid to open or close the reactor body, a wafer elevating unit for raising the wafer mounted on the wafer block, an injector assembly disposed at one side of the reactor body for injecting a reactant gas and/or inert gas, and a gas outlet disposed at other side of the reactor body for discharging an introduced reactant gas and/or inert gas. When the reactor lid is put on the reactor body a space smaller than or as large as ten piled up wafers is formed inside the reactor.

Description

200414311 Mei, Description of the invention: [Technical field to which the invention belongs] Priority The present invention claims the priority of Korean Patent Application No. 2002-56005 filed with the Korean Intellectual Property Office on September 14, 2002, the entire disclosure of which is incorporated herein. for reference. TECHNICAL FIELD The present invention relates to a mobile thin-film deposition apparatus and a syringe assembly thereof, and more particularly to a mobile thin-film deposition apparatus for depositing a thin film on a wafer such as a semiconductor substrate and a mobile thin-film deposition apparatus Syringe assembly for thin film deposition equipment. [Previous Technology] Thin film deposition equipment is roughly classified into flow-type equipment and shower-head equipment based on the way in which reaction gas is injected. The flow-type thin film deposition apparatus deposits a thin film by flowing a reaction gas from one side of a wafer onto the surface of the wafer. A shower head type thin film deposition apparatus deposits a thin film by spraying a reactive gas from a position above a wafer onto the surface of the wafer. Flow-type film deposition equipment and shower-type film deposition equipment have their advantages and disadvantages. Attempts have been made to develop thin film deposition equipment that combines the advantages of both types of equipment. SUMMARY OF THE INVENTION The present invention provides a flow-type thin film deposition apparatus that can be effectively managed and easy to maintain and repair. 200414311 The present invention also provides a syringe assembly that enables a reactive gas to flow from one side of a wafer to the surface of the wafer in a more uniform manner. + According to a feature of the present invention, there is provided a syringe assembly for flow-type thin film deposition. The flow-type thin film deposition equipment flows from one side of the wafer to the other side by using a gas. To deposit a thin film, the injection state includes: a syringe in which a first flow path and a first IL moving path are formed in parallel to each other; and a gas distributor is arranged in front of the syringe and A plurality of injection holes having a diffusion portion formed therein and a plurality of injection holes formed therein are used to diffuse the reaction gas injected from the first flow path and the second flow path, and the injection holes are used for The reaction gas diffused by the diffusion portion is injected toward the wafer. Kouhai injection can further have a first flat flow path and a second micro flat flow path connected to the first flow path and the second flow path. The first and second micro flat flow paths are open to the diffusion part. . The first flow path and the second flow path can be arranged inside the injector in a ring shape and are connected to a first reaction gas supply line and a second reaction gas supply line, respectively. The diffusion portion of the gas distributor may have a first inclined surface and a second inclined surface formed therein to allow an injected reaction gas to smoothly flow through the plurality of injection holes. According to another feature of the present invention, there is provided a flow-type thin film deposition apparatus including a storage chamber having a chamber formed at one side thereof for allowing a wafer to enter and leave therethrough. A passageway and a chamber cover detachably assembled to the chamber; a reactor which is installed inside the 200414311 chamber and has a reactor body, and the wafer system is housed in the body and a reactor A lid is placed on the top of the reactor body. A wafer block is detachably arranged inside the reactor for allowing the wafer to be mounted thereon and heating the wafer. A lifting unit for lifting the reactor cover to open or close the reactor body; a wafer lifting unit for lifting a wafer mounted on a wafer block; a syringe assembly configured to be arranged in the reactor One side of the main body is used to inject a reaction gas and / or inert gas; and a gas outlet is arranged on the other side of the reactor main body to discharge the introduced reaction gas and / or inert gas. The reactor body may have a gas curtain groove formed along the outer periphery of the body and formed outside the wafer block, so that an inert gas may flow through the gas curtain groove or a vacuum may be formed in the gas Curtain recess. The wafer block may include a circular substrate heating plate for applying thermal energy to the wafer and a circular substrate heating plate support for supporting a circular substrate heating body. The wafer block may further include a mounting panel which is disposed above the circular substrate heating plate and has a mounting portion formed thereon, and the wafer is mounted on the mounting portion. A Taumann ring can be inserted between the circular substrate heating plate and the reactor body to prevent heat generated by the circular substrate heating plate from being transferred to the reactor body. The heat transfer prevention plate may be disposed below the circular substrate heating plate to prevent heat generated from the circular substrate heating plate from being transferred to the container. The cover lifting unit can be configured in the chamber or the reactor body, and includes 414311 a first cylinder having a first rod and a lifting pin, and the position of the lifting pin is corresponding to that of the reactor cover. The reactor cover support portion & is interlocked with the first rod. ~ Kouhai main ejector assembly may include: a syringe in which a first flow path and a second flow path are formed parallel to each other; and a 2 distributor 'which has a diffusion portion formed therein and Plural formation of injection holes ", the diffusion part is used to diffuse the reaction gas injected from the first flow path: the second flow path, these injection holes are used to inject the reaction gas diffused by the diffusion part toward the wafer The shooting thief may have a first flow path and a second flow path item: a micro flat flow path and a second micro flat flow path. The first and second micro flat flow paths are open to the diffusion part. : '丨 L 动 路 “and the second flow path can be arranged in a ring in the syringe P and the knife is connected to a first reaction gas supply line and a second reaction gas supply line. Second, the diffuser portion of the volume distributor may have a first-inclined surface and a slanted surface, allowing the injected reaction gas to smoothly pass through the injection holes. The gas outlet can be installed on the other side of the reactor body, which is originally coupled to the pumping shield and has a plurality of pumping wheel controllers connected to the hole. Among them are multiple excitement ^ ^ ^ U multiple inserts of pumping holes of different diameters. A top support plate and the syringe assembly, or a back shield can be inserted into the mounting portion to adjust a distance between the mounting portion and the syringe assembly 12 200414311. When the reactor cover is placed on the reactor body, a space for storing ten or less wafers of ten stacks can be formed inside the reactor. [Embodiments] Preferred embodiments of the present invention will now be described more fully with reference to the accompanying drawings. FIG. 7 is a perspective view of a syringe assembly used in the flow-type thin film deposition apparatus of FIG. 1; FIG. 8 is a perspective view of the syringe of FIG. 7; FIG. 9 is a first flow path and a second flow A schematic view of the path; and FIG. 10 is a perspective view of the gas distributor of FIG. 7. Referring to FIG. 7 to FIG. 10, the syringe assembly is used in a flow-type thin film deposition apparatus that deposits a thin film by flowing a reaction gas from the: side of the wafer w to the other side on the surface of the wafer w. Syringe set 彳 50 includes a syringe 51 and a gas distributor 56 provided with 扃 ,、 and rr1, and the main shot 51 is square. The syringe 51 is generally 疋 Λ ^, —-shaped, and is made of metal. A first flow path 53 and a first, second, and third motor paths 54 are formed in the syringe q 1 in the longitudinal direction and parallel to each other. The first flow path 53 and the second flow path 54 are arranged so that the ring supply lines P1 and 1 ′ are connected to the first reaction gas and the reaction gas supply line P2. As shown in FIG. 9, the first flow path 53 such as \,, and the first movement path 54 are divided into two parts at the rear portion of the syringe 51. A part of the element e travels from the first reaction gas supply line Plm in a Y-axis direction from a flow path Pl & formed by Wanmen to one side of the injection source 51, and two sides a and y. The end of the side turns 90 degrees along the X-axis direction 13 200414311 'at the end 9 of the width of the syringe 51. Degrees, and turn in the Y-axis direction of the syringe 51 Α person, then the square part is in the γ-axis direction and the A-line meets. Here, the syringe 51 is further directed to another person, the first micro-flat flow path a and the second micro-flat flow path ..., which are respectively connected to the second flow path 54, and the diffusion of the text = Part 56. Open. That is, the first micro-flat flow II = and the brother-micro-flat flow path 54a communicates with the flow path formed in the U direction., Forming the first-flow path 53 and the second flow path 54 and the first The steps of a micro flat motor path 53a and a second micro flat flow path will be explained as follows. These steps include drilling holes in the square part and the front part of the syringe 51, and milling the ends of the two sides of the syringe 51 to form Hollow, and a flow path sealing member 52 is inserted into the hollow formed at the two sides of the two sides. Here, a hole system is formed so that the first reaction gas supply line ρ1 that supplies a first reaction gas can be Is connected to the center of the first flow path 53 and another hole system is formed so that a second reaction gas supply line P2 supplying a second reaction gas can be connected to the first flow The center of the path 54. The first micro flat flow path 53a and the second micro flat flow path 54a are formed by bringing a wire saw into a flow path formed in a front portion of the syringe 51 and performing a wire cutting operation. Here In the structure, a reaction gas system supplied by the first reaction gas supply line P1 and the second reaction gas supply line P2 passes through the annular first flow path 53 and the annular second flow path 54 and is then injected through the first micro flat flow path 53a and the second micro-flat flow path 14 200414311 54a 〇 During the diaphragm deposition process, the temperature of the syringe 51 increases. Here, because the first micro-flat flow path & the second micro-flat flow path 54a Nakajima 'This interval may change due to the thermal deformation of the syringe. Therefore, in order to maintain the interval between the first miniature flat flow path W and the second mounted flat flow path 54a at a high temperature, this embodiment uses two miniature Flat flow path deformation prevention member ... As shown in FIG. 8 'Each miniature flat flow path deformation prevention structure # 55 by a syringe A groove is formed on 51 to extend from a portion slightly higher than the first micro flat flow path to-slightly lower than the portion of the micro flat flow path 彳, and it is assembled in the groove and installed on the syringe 51 Forward. Even if the syringe 51 is thermally deformed, the interval between the first micro-flat flow path shirt and the second micro-flat flow path # 54a can be maintained by the effect of the micro-flat flow path deformation preventing member 55. Lice body distributor The 56 series is arranged in front of the syringe 51 to include a first micro flat flow path 53a and a second micro flat flow path ... The lice body distribution state 56 has formed therein for diffusion from the micro flat flow path 53a & 54a injection A diffusion portion 56c of the reaction gas and a plurality of injection holes ⑽ formed therein for injecting the diffusion portion > the diffused reaction gas is injected toward the wafer w. Here, the diffusing portion has a first inclined surface 56b and a second inclined surface 56b, and the rolled body reacts smoothly with a load of 5 kg / mm to flow through the injection hole 56a. Although this embodiment shows that the syringe 51 and the gas distributor M are individually manufactured and then consumed with each other with bolts and nuts, the present invention is not limited to this. 15 200414311 YJ Such as / the main injector and the gas distributor may be integrated with each other forming. FIG. 11 illustrates a perspective view of a route through which a reactant gas system that is maneuvered in the syringe assembly of FIG. 7 passes. Referring to FIG. 11, it will be easier to understand how a reaction gas flows through the first and second reaction gas supply lines p2 and P2, the first flow path 53 and the second flow path B54, and the first micro flat flow path 5 % And the second micro-flat flow path 54a, the diffusion portion 56c, and the injection hole 56a. Although the syringe assembly includes two flow paths and two micro-flat flow paths formed therein to form a two-element film, this is exemplary and is to be interpreted. Therefore, the present invention is not limited thereto. For example, when three or more element 4 films are formed, the syringe may use three or more flow paths and a micro-flat flow path. Next, a flow-type thin film deposition apparatus according to the present invention will be explained. FIG. 1 is an exploded perspective view of a flow-type thin film deposition apparatus according to the present invention; FIG. 2 is a side sectional view of the flow-type thin film deposition apparatus in FIG. 丨; FIG. 3 is a perspective view of a chamber in FIG. 1; A perspective view of the reactor and the cover lifting unit disposed in the container of FIG. 3; FIG. 5 is a perspective view of the reactor body in FIG. 4; and FIG. 6 is disposed at one side of the wafer block in FIG. A perspective view of a ceramic ring and a heat transfer prevention plate disposed below the wafer block. FIG. 12 is a perspective view of a gas outlet applied to the flow type thin film deposition equipment of FIG. 丨; FIG. 13 is a perspective view of a top support plate disposed on the reactor cover of FIG. 丨 and FIG. 2; A perspective view of the back shield in the reactor of FIG. 2. As shown in the figure, the flow-type thin film deposition equipment includes a container 丨 Q; 200414311 a reactor 20, which is installed inside the container 10 and has a reactor body 21 and a reactor cover 22; a A wafer block 25 detachably arranged in the reactor body 21 to heat the wafer mounted thereon; a cover lifting unit 30 for lifting the reactor cover 22 to open or close the reactor body 21. A wafer lifting unit 40 for lifting the wafer w inside the reactor 20; a syringe assembly 50 for removing a reactive gas and / or an inert gas from a reactor 20 Side injection to the other side; and a gas outlet 60 for exhausting a reaction gas and / or inert gas introduced into the interior of the reactor 20. -The side compartment 10 is combined with a transfer module (not shown), in which an automatic control device (not shown) carries the wafer w through a reduction valve V. A storage chamber cover 13 is detachably installed in the storage chamber 10 to open or close the storage chamber 10 in a sealed manner. A channel n (wafer ... is entered through the channel) is formed on one side surface of the chamber 10, as shown in Figs. 1 and 3. A viewing port 12 is formed on the other surface of the container chamber ′ for the user to view the inside of the container chamber 10. A window system, usually made of quartz, is installed in the viewing port 12. As shown in FIG. 4, a reactor 20 in which a wafer w is mounted has a reactor cover 22, which is placed on top of the reactor body 21 to close the reactor body 21 in a sealed manner. The wafer block 25 shown in FIGS. 1 and 2 includes a circular substrate heating plate 25b for applying thermal energy to the wafer w, and a circular substrate for supporting the circular substrate heating plate 25b. The material heating plate support 25c and a mounting panel 25a are arranged on the circular substrate heating plate 25b and have a mounting portion 25a on which the wafer w is mounted. When viewed from one side, the Rishou's circular substrate heating plate 25b and the circular substrate heating plate support 25c as a whole have a "τ" shape. A heater is installed inside the circular substrate heating plate 25b. The mounting portion 25a disposed on the mounting panel 25a has a recessed portion whose depth is the same as the thickness of the wafer w. The recess has a circular configuration, so that a circular wafer can be mounted on the recess. In this manner, when the wafer w is mounted on the mounting portion 25a, a reactive gas and / or an inert gas can smoothly flow without any obstacle. As shown in Fig. 5, a gas curtain groove 23 is formed along the outer periphery of the reactor body 21 on the outside of the wafer block 25. The gas curtain groove 23 functions as a passage through which an inert gas system supplied from an inert gas supplier P3 connected to the main body of the reactor flows. A gas curtain is formed by flowing an inert gas. The reactor body Η is made of metal. In this embodiment, it is, for example, titanium (Ti) or Inconel. Although the gas curtain is formed by flowing an inert gas in this embodiment, the effect of the gas curtain can also be achieved by forming a vacuum in the gas curtain groove 23. The gas curtain groove 23 prevents the reaction gas inside the reactor 20 from flowing to the chamber 10, or prevents the gas inside the chamber 10 from flowing to the reactor. A reaction gas used in the thin film deposition process is highly reactive, so that when a small amount of reaction gas leaks into the inside of the chamber 10, the chamber 10 will be polluted 'and, conversely, when an external gas flows into the reactor 2 (), It may have a bad effect on the thin film deposition process. However, the gas curtain groove 23 18 200414311 is used to prevent this gas from leaking. As shown in FIGS. 2 and 6, a ceramic ring 26 is inserted between the circular substrate heating plate 25 b and the reactor body 21 to prevent the heat generated by the circular substrate heating plate 25 b from being excessively transmitted. To the reactor body 2ι. The circular substrate heating plate 25b heats the wafer w and prepares a thin film deposition process. At this time, the heat generated by the circular substrate heating plate 25b should be smoothly transferred to the wafer w via the mounting portion 25a. For this reason, a ceramic ring 26 having good insulation properties is interposed between the circular substrate heating plate 25b and the reactor body 21. As shown in FIG. 2 and FIG. 6, the heat transfer prevention plates 27 and 28 are arranged on the circular substrate heating plate 25 b, and 'below' to prevent the heat generated by the circular substrate heating plate from being transferred to the chamber excessively. 1Ge Here, two or more heat transfer prevention plates may be arranged in a manner separated by a predetermined distance. The lid lifting unit 30 shown in Fig. 4 is arranged in the container ιo or the reactor body 21. In this embodiment, the lid lifting unit is arranged in the reactor body 21. The cover lifting unit 3Q includes a first cylinder μ, which has a first lever member 32 and a lifting r qq peak “flat open% nail 33”, the first lever member 32 is lifted off the first steam red 31 The position of the lifting pin 33 specifically raised by the Xi and Li k & dl 忒 is locked to the library to support the portion 22a and corresponding to the branch corresponding to the first 槔 # 痛. The support portion 仏 is formed on the reactor body. The edge part of 21. The wafer lifting unit 4〇 # @ 士 一 Φ ^ _ is placed in the valley chamber 10 or the reactor main body 21. As shown in FIG. 2w, aSaK ^ t 4〇 疋 is arranged in the chamber 10...升 Lifting early 70 40 includes-the second cylinder 4 has a second rod 42 mk ▲ 什 Shi W and crystal back pegs 43, which is lifted away from the second cylinder 41, $ ^ a — cup The piece 42 is locked with the wafer rod 43 and the second rod 19 200414311 4 2 and interlocked with each other and protrudes to the tape, ..., to the pin hole formed in the mounting portion 25a '^ a Here, the round detection nail 43 is protruded through the nail hole ❿, and is formed on the mounting portion 以 at equal intervals, as shown in Fig. $. As shown in Fig. 7 to Fig. 10 50 series of syringe components It includes a syringe 51 and a gas distributor 56 arranged in front of the syringe 51. The main injector 51 has first and second flow paths 53 formed in parallel with each other in a ring shape, and separately from the first The first and second flow paths 53 and 54 communicate with each other and open in front of the first and second micro-flat flow paths 53a and 54a. The first flow path M is connected to the first reaction gas supply line p, which supplies a first reaction gas, and the second flow path 54 is connected to the second reaction gas supply line P2, which supplies a first Two reaction gases. The gas distributor 56 is formed in front of the syringe 5 and includes a first micro-flat flow path 53a and a second micro-flat flow path 5 栳. The gas distributors 56 have a diffusion portion formed therein for diffusing injection from the first micro-flat flow path 53a and the second micro-flat flow path 54a (which communicate with the first and second flow paths 53 and 54, respectively). A plurality of injection holes 56a formed therein for injecting a reaction gas diffused by the diffusion portion 56c toward the wafer w; and first and second inclined surfaces 56b and 56b, which are configured In the enlarged moon owing portion 56c, the injected reaction gas is allowed to smoothly flow through the injection hole 56a. As shown in FIGS. 1 and 12, the gas outlet 60 includes a pumping shield 61 mounted on the other side of the reactor body 21, a pumping shield 20 coupled to the pumping shield 20 200414311 and having a plurality of faces formed therein. The pumping corridor controller 62 of the access hole 62 & and a plurality of inserts 63 are inserted into the coupling hole 62a t and have pumping holes of different diameters formed therein. Here, it is preferable that the insert 63 having a larger pumping hole is disposed farther from the center of the pumping corridor controller 62. This is because the density of a reaction gas passing through the center of the reactor body 21 is different from the density of a reaction gas passing through the two edges of the reaction body 21. That is, since the density of the reaction gas passing through the center of the reaction body 21 is greater than the density of the reaction gas passing through the edge of the reactor body 21-μ and straight μ, the reaction discharged to the two edges of the outlet 60 of the delay body The amount of gas must be greater than that discharged to the center of the gas outlet 60 and the summer of the reaction milk must be identified to achieve a uniform density of the reaction gas flowing on the wafer w. However, the configuration of the pumping holes can vary depending on the reaction gas used and the processing conditions. In this case, the syringe assembly can be widely used by exchanging inserts 63 'having a suction hole. A support plate 71 shown in FIG. 3 66 T100M Jr 4 + P ^ 4 and / or a shield 72 shown in FIG. 1 may be provided as shown in FIG. 1-c is placed inside the reactor body 21 to ° Female '^ σ knife 25a and the distance between the syringe assembly 50. : The support plate 71 is arranged at the rear part of the reactor cover M, and a stepped portion 22 protruding downward therefrom is placed on the reactor body ⑽, ⑽; The gas eight cloth of 50 „π a 糸;? Is arranged on a front part of the hole body knife cloth state 56 to fix the position of the syringe assembly above the knife 50. Here, when the step portion 71 a # 宫 度 is changed The position of the syringe assembly 50 ㈣p: 713 The wide-mouth P knife 25a and the distance between the syringe assembly female saddle can be adjusted by changing the width of the stepped part 21 points 71a. Piece 5 = cover 72 can also be used to adjust the mounting part , And injection h inside = corresponds to the lower end of the top support plate 71. Back guard: arranged below the front part of the gas distributor 56: the position of the breaking assembly 50 and the top support plate 71. / In this way, the crystal The distance between the circle w and the syringe assembly 50 is adjusted by changing the step 9 72 of the top support plate 71. The width of the trowel 7la and the back shield Next, the flow-type film deposition apparatus constructed as described above will be explained as follows $ When the chambers 3 are placed in the chamber 1 〇 At the time, the cover lifting unit 30 will actuate to lift the reactor cover 22 from the reactor body 21. Then, the reduction valve V is opened and a robot arm of the pass-shut module is moved to move the crystal The circle w is transferred to the holding chamber 1G. Here, the wafer pegs 43 are lifted to the peg holes formed in the mounting portion & 25a of the mounting panel 25a, and are transferred to the holding chamber. The wafer w in 10 will be mounted on the wafer peg 43. Next, the robot arm will leave the chamber and the reduction valve will be closed. At the same time, the wafer peg 43 is lowered, so that the wafer w Will be mounted on the mounting portion 25a '. The lifting pins 33 will be lowered so that the reactor body 21 is closed with the reactor cover 22. When the reactor cover 22 is placed on the reactor body 21,' a smaller than Or an internal space of ten stacked wafers w may be formed inside the reactor 20. In this embodiment, 2 22 200414311 or three stacked wafer spaces may be formed. That is, one flat And Xiaoyu's space system is formed inside the reactor 20. Next 'a kind of inert gas supply pipe The supplied inert gas P3 flows through the gas curtain groove 23 inside the reactor body 21. Next, a first reaction gas and / or an inert gas and a first reaction gas and / or an inert gas system are alternately passed through The injection passes through the syringe assembly 50. The gas flows to a gas outlet 60 on the surface of the wafer installed in a small space inside the reactor 20. The first reaction gas and / or inert gas supplied from the first reaction gas supply line P1 The gas system is injected from the first flow path 53 and the first micro-flat flow path 53a, diffused by the diffusion portion 56c, and injected into the wafer w via the injection hole 56a. The second reaction gas and / or inert gas system supplied from the second reaction gas supply line P2 is injected from the second flow path 54 and the second micro-flat flow path 54a, diffused by the diffusion portion 56c, and is injected through the injection hole 56a. Injected to wafer w. When the first and second reactive gases flow over the surface of the wafer, an atomic layer deposition (ALD) process is performed to deposit a thin film on the surface of the wafer having an atomic level. At the same time, since the first reaction gas and the second reaction gas used in the film deposition are highly reactive, when a small amount of the reaction gas is leaked into the valley, it is easy to pollute the container. In contrast, when an external gas flows into the reactor 20, it has a bad influence on the film deposition. Therefore, in order to prevent the first and second reaction gases from leaking to the outside of the reactor 20, an inert gas system flows through the gas curtain groove 23 to further reduce the probability of gas leakage. However, it is not that the first and second reaction gases used to deposit the thin film are not completely exhausted from the gas outlet 60, but that they may be exhausted from the reactor 20. Therefore, it is preferable that the pressure in the chamber 10 will be equal to the pressure of the reactor 20 β. As a result, an overpressure gas is introduced into the chamber 10 through a line (not shown). The first reaction gas and the second reaction gas, which are not used to deposit the thin film, pass through the gas, and the outlet 60 is discharged to the outside. During this process, the density of a reactive gas passing through the center of the main body 21 of Reaction 1 may be higher than that of a reactive gas passing through the edges of the main body 21 of the reactor. At this time, the amount of the reaction gas discharged to one edge of the gas outlet 60 must be larger than the amount of the reaction gas discharged to the center. This is achieved by making the suction hole of the insert 63 at the center of the gas outlet 60 smaller than that at the edge of the gas outlet 60. Thereby, a uniform gas distribution inside the reactor main body 21 can be ensured. Through these procedures, films can be deposited on wafers with atomic-scale dimensions. As described above, the flow-type thin film deposition apparatus and its syringe assembly according to the present invention can easily separate a wafer block, an injector assembly, or a gas outlet from a reactor during cleaning or repair. The present invention uses a syringe assembly and a gas outlet, so that the reaction gas can be ensured to be evenly distributed on the wafer surface. Although the present invention has been particularly shown and described with reference to its exemplary embodiments, those skilled in the art will appreciate that various changes in form and detail can be made without departing from the invention as defined by the scope of the following patent applications Spirit and scope. 24 200414311 [Brief description of the drawings] (I) The drawings describe the exemplary embodiments of the present invention by referring to the attached drawings and referring to the accompanying drawings. The above and other features and advantages of the present invention will be more clear, of which: FIG. 1 It is an exploded perspective view of the flow-type thin film deposition apparatus according to the present invention; FIG. 2 is a side sectional view of the flow-type thin film deposition apparatus in FIG. 1; FIG. 3 is a perspective view of the chamber in FIG. 1; A perspective view of the reactor and the lid lifting unit in the container of FIG. 3; FIG. 5 is a perspective view of the reactor body in FIG. 4; and FIG. 6 is a ceramic ring disposed at one side of the wafer block in FIG. And a perspective view of a heat transfer prevention plate disposed below the wafer block; FIG. 7 is a perspective view of a syringe assembly used in the flow-type thin film deposition apparatus of FIG. 1; FIG. 8 is a perspective view of the syringe in FIG. 7; Schematic diagram of the first flow path and the second flow path® diameter in the syringe of Fig. 8; Fig. 10 is a perspective view of the gas distributor of Fig. 7; Fig. 11 is a perspective view illustrating a route; The flowing reagent gas system passes through this Fig. 12 is a perspective view of a gas outlet for the flow-type thin film deposition equipment in Fig. 1; Fig. 13 is a perspective view of a top support plate 25 200414311 arranged on the reactor cover of Figs. 1 and 2; and Fig. 14 It is a perspective view of a back shield disposed in the reactor of FIGS. 1 and 2. (II) Symbols of components 10 11 12 13 20 21 22 22a 23 25 25a 25a '25a,' 25b 25c 26 27 28 30 Viewing the chamber passage through the chamber chamber cover reactor reactor body reactor cover supporting part gas curtain Grooved crystal cymbal block mounting panel mounting part peg hole round base heating plate round base heating plate support ceramic ring heat transfer prevention plate heat transfer prevention plate cover lifting unit

26 200414311 31 First cylinder 32 First rod 33 Lifting stud 40 Wafer lifting unit 41 Second cylinder 42 Second rod 43 Wafer inspection 50 Syringe assembly 51 Syringe 52 Flow path sealing member 53 First flow Path 53a first micro-flat flow path 54 second flow path 54a second micro-flat flow path 55 deformation preventing member 56 gas distributor 56a injection hole 56b first inclined surface 56b 'second inclined surface 56c diffusion portion 60 gas outlet 61 Pumping shield 62 Pumping profile controller 62a Coupling hole 200414311 63 Insert 71 Top support plate 71a Stepped portion 72 Back shield PI First reaction gas supply line PI, flow path P2 Second reaction gas supply line P3 Inert gas supply W w Wafer V reduction valve

28

Claims (1)

200414311 The scope of patent application: 1. A kind of injection-type thin film sink borrowing executive broadcast # # used for flow-type thin film deposition equipment, and the flow film deposition is prepared by removing a reactive gas from The wafer is moved to the other side to deposit a thin film. The syringe assembly includes:;, L-syringe; a first flow path formed therein in parallel with a second flow; and k-systems-gas distributors, which are A diffusion portion formed in the front of the syringe and a plurality of ^ formed therein are formed in the same hole. The diffusion portion of the same hole is used to diffuse the reactive gas injected from the first flow path and the second flow path.哕 Pont »Haizhuanzhuang Cavern is used to inject the reactive gas handled by the diffuser towards the wafer. ", 2, 2" The syringe assembly described in item 1 of the scope of the patent application, wherein the injection device further has a first micro flat flow path and a second micro flat flow path, which is related to the first flow path and the second flow. The paths are connected and open to the diffused part. 3. The syringe assembly according to item 1 or item 2 of the scope of patent application, wherein the first flow path and the second flow path are arranged in a ring form β inside the syringe 'and are connected to a first A reaction gas supply official line and a second reaction gas supply line. 4. The syringe assembly according to item 3 of the patent claim, wherein the diffusion portion of the gas distributor has a first inclined surface and a first inclined surface formed therein for allowing the injected reaction gas to smoothly Flow through the plurality of injection holes. 5. A flow-type thin film deposition equipment, which includes: 29 200414311 a container with a channel and a container cover, the channel is formed on one side of the container to allow wafers to It enters and exits through the passage, and the cover of the container is detachably assembled to the container; a reactor is installed inside the chamber and has a reactor main body and a top of the reactor main body. The reactor cover, and the wafer is contained in the reactor body;-the wafer block is detachably arranged inside the reactor for allowing the wafer to be mounted thereon and heating the wafer; a cover A lifting unit for lifting the reactor cover to open or close the reactor body; a wafer lifting unit for lifting a wafer mounted on a wafer block; a syringe assembly configured to be mounted on the One side of the reactor main body is used to > shoot a reaction gas and / or inert gas mainly; and a gas outlet is arranged on the other side of the reactor body to discharge an introduced reaction gas and / Or inert gas. 6. The flow-type thin film deposition device according to item 5 of the scope of the patent application, wherein the reaction H body has a gas curtain groove formed along the periphery of the reactor body and the outside of the wafer block, making it inert. Gas can flow through the gas curtain groove or a vacuum can form in the gas curtain groove. 7. The flow-type thin film deposition equipment according to item 5 of the scope of the patent application, wherein the wafer block includes-a circular substrate heating plate for applying thermal energy to the wafer and-for supporting the main body of the Ϊ-shaped substrate heating body Round substrate plus rail plate support. # 8 · The flow-type thin film deposition equipment 30 200414311 according to item 7 of the scope of patent application, wherein the wafer block further includes a mounting panel, which is arranged above the circular substrate heating plate and has a formed on it. And the wafer is mounted on the mounting portion. 9 · The flow-type thin film deposition equipment as described in item 7 of the patent claim, wherein the ceramic ring system is inserted between the circular substrate heating plate and the reactor body to prevent the circular substrate heating plate from being generated. The heat is transferred to the reactor body. 1 · The flow-type thin film deposition equipment as described in item 7 of the scope of Shenyan's patent, wherein the heat transfer prevention plate is arranged below the circular substrate heating plate to prevent the heat generated by the circular substrate heating plate. Heat is transferred to the chamber. 11. The flow-type thin film deposition equipment according to item 5 of the scope of the patent application, wherein the cover lifting unit is arranged in the container or the reactor body and includes a first steam red, the first cylinder having a first The position of the one-lift rod and the lifting bolt Ding Niusheng peg corresponds to the reactor cover support portion of the reactor cover and is interlocked with the first rod. 12. The flow-type thin film deposition facility as described in item 5 of the scope of the patent application, wherein the syringe assembly includes: a syringe in which a first cleaning path and a second flow path are formed in parallel to each other; And a Thai body distributor, and the right one of the μ & 丄 〃 diffusion portion formed therein and a plurality of 'main shots / same holes formed therein, the diffusion portion is used to diffuse from the first flow path to the first The reaction gas injected through the moving path is used to inject the reaction gas diffused by the diffusion part toward the wafer. 13. The flow-type thin film deposition equipment according to item 12 of the scope of the patent application, wherein the syringe further has a first micro-flat flow path and a 31 200414311-type flat flow path, which is connected to the diameter and diffuses. Partially open. ^ And No.-flow path u. As the 13th in the scope of application for patents, where the mobile film deposition of the 望 ,, and "only" is set in the injection 3, the 7 diameter and the second flow path are arranged in a circular form straight two Sheyi is internally connected to the second anti-money body supply line. Μ Gas supply pipe preparation, 12 The flow type thin film deposition device as described in the second patent scope 帛 12: the diffusion part of the wide-body distributor It has a sloping surface and a second sloping surface, which can be used to hold the first injection hole smoothly. The reaction gas of w is the same as that of the flow-type thin film deposition equipment described in item 5 of the scope of the patent application. The outlet includes a pumping unit installed on the other side of the reactor body, connected to the pumping unit cover and having a plurality of coupling pumping profile controllers formed therein, and a plurality of inserts, material inserts. 'And has a plurality of pumping holes of different diameters formed therein. The flow-type thin film deposition equipment described in item 5 of the above-mentioned #i IlL Wai-middle_top support plate and / or a back cover is quilted Insert in the installation part and injection Between the components to adjust the distance between the mounting part and the syringe component. 18. The flow-type thin film deposition device as described in item 5 of the scope of the patent application, wherein when the reactor cover is placed on the reactor body, A space of less than or equal to ten stacked wafers is formed inside the reactor.