CN112713074B - Gas shower head assembly and plasma processing equipment - Google Patents
Gas shower head assembly and plasma processing equipment Download PDFInfo
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- CN112713074B CN112713074B CN201911024420.2A CN201911024420A CN112713074B CN 112713074 B CN112713074 B CN 112713074B CN 201911024420 A CN201911024420 A CN 201911024420A CN 112713074 B CN112713074 B CN 112713074B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a gas shower head component and plasma processing equipment, the gas shower head component is used for a plasma processing device, and comprises: the supporting baffle is positioned below the supporting baffle and forms a mounting substrate of a closed space with the supporting baffle; the lower surface of the gas spraying plate faces to a processing space inside the plasma processing device, a plurality of first gas through holes are formed in the mounting substrate, a plurality of second gas through holes are formed in the gas spraying plate, and the first gas through holes correspond to the second gas through holes in position, so that the closed space is in gas communication with the processing space below the gas spraying plate; a corrosion-resistant material layer is formed on the surface of the side wall of the first gas through hole in the mounting substrate, and the corrosion-resistant material layer is a Teflon coating, an acrylic resin coating or an epoxy resin coating. The invention improves the etching precision and the product yield, prolongs the service life of the gas spray head assembly and reduces the preparation cost of the product.
Description
Technical Field
The invention relates to the technical field of semiconductor processing equipment, in particular to a gas spray head assembly and plasma processing equipment.
Background
In the plasma processing process, firstly, the modulating gas and the process gas are mixed into a reaction gas, then the reaction gas is introduced into the reaction chamber, and the radio frequency power is applied to perform the plasma processing process on the semiconductor workpiece to be processed. The means for mixing the modulating gas and the process gas is a gas showerhead assembly. The material of the existing gas shower head assembly used for the plasma processing equipment is easy to be corroded by corrosive reaction gas, and a method for protecting an anodic oxidation layer on the surface of the gas shower head assembly exposed to the reaction gas is generally adopted at present so as to try to solve the problem of corrosion of the corrosive gas to the gas shower head assembly. However, in practice, it has been found that the showerhead assembly exposed to the reactive gases still suffers from corrosion. The new process requires the use of halogen-containing gases, such as chlorine, which react with aluminum to form gases that contaminate the AlCl3 and corrode components composed primarily of aluminum, such as mounting substrates in gas shower head assemblies. The difference between the thermal expansion coefficients of aluminum oxide formed on the surface of the anodized aluminum part and an aluminum body is large, so that the aluminum part is easy to crack and form a large number of fine cracks in the temperature change process. Chlorine gas can enter the aluminum body along the cracks to cause serious corrosion to the parts. Therefore, the wafer is polluted, the final etching precision and the product yield are influenced, the service life of the gas shower head assembly is shortened due to the existence of the corrosion problem, and corroded parts in the gas shower head assembly need to be frequently replaced in the process of adopting the gas shower head assembly for a long time, so that the preparation cost of products is increased. On the other hand, the sizes of a large number of gas through holes in the gas shower head assembly are very small, all the gas through holes are smaller than 6mm, and the smallest gas through hole is only 1mm, so that the corrosion-resistant layer cannot be effectively coated in the through holes with extremely small sizes in the prior art. Therefore, in a plasma processing apparatus requiring chlorine as a process gas, the gas shower head assembly is subject to severe corrosion of chlorine, and the conventional anodized layer cannot effectively solve the problem of corrosion of gas through-holes, and a new coating process and material layer are required to be found to solve the above problems.
Disclosure of Invention
The invention aims to provide a gas shower head assembly and plasma processing equipment, which are used for solving the problems that in the prior art, a wafer is polluted due to corrosion of the gas shower head assembly, the final etching precision and the product yield are influenced, the service life of the gas shower head assembly is shortened, and the corroded part in the gas shower head assembly needs to be frequently replaced, so that the preparation cost of a product is increased.
In order to solve the problems, the invention is realized by the following technical scheme:
a gas showerhead assembly for a plasma processing apparatus, comprising: the supporting baffle is positioned below the supporting baffle and forms a mounting substrate of a closed space with the supporting baffle; the lower surface of the gas spraying plate faces the processing space inside the plasma processing device, a plurality of first gas through holes are formed in the mounting substrate, a plurality of second gas through holes are formed in the gas spraying plate, and the first gas through holes correspond to the second gas through holes in position, so that the closed space is in gas communication with the processing space below the gas spraying plate; a corrosion-resistant material layer is formed on the surface of the side wall of the first gas through hole in the mounting substrate, and the corrosion-resistant material layer is a Teflon coating, an acrylic resin coating or an epoxy resin coating.
Preferably, each of the first gas through holes has a diameter of less than 6mm.
Preferably, the corrosion-resistant material layer is formed on the wall of each first gas through hole by a flow-filling process.
Preferably, the flow-through-irrigation process comprises:
blocking one opening of each first gas through hole by adopting a jig;
filling liquid paint from the other opening of each first gas through hole, and pouring the liquid paint out after the liquid paint is placed in each first gas through hole for preset time;
sintering each first gas through hole, so that the liquid coating on the hole wall of each first gas through hole forms the solid corrosion-resistant material layer.
Preferably, the mounting substrate edge includes an upwardly protruding connection ring, an upper surface of the mounting substrate surrounded by the connection ring is coated with a corrosion resistant material layer, and the upper surface of the connection ring is conductively connected with the support shield.
Preferably, a sealing ring accommodating groove is formed in a contact position of the bottom of the supporting baffle and the mounting substrate, and a sealing ring is arranged in the sealing ring accommodating groove.
Preferably, it further comprises: a first gas baffle disposed below the support baffle, an
A second gas baffle disposed below the first gas baffle; the first gas baffle and the second gas baffle are arranged in the closed space.
Preferably, the mounting substrate is connected to a gas shower plate located therebelow.
Preferably, the supporting baffle is provided with at least one first gas inlet hole for introducing a first gas and at least one second gas inlet hole for introducing a second gas;
the first gas baffle is provided with a first mixing channel for mixing a first gas and a second gas and at least one first mixed gas outlet hole penetrating through the first gas baffle;
the second gas baffle is provided with a second mixing channel for mixing the first gas and the second gas and at least one second mixed gas outlet hole penetrating through the second gas baffle;
the mounting substrate is provided with at least one third mixed gas outlet hole;
the first mixed gas outlet hole is connected with the second mixing channel, and the reaction gas mixed by the first gas baffle is conveyed to the second mixing channel for secondary mixing;
the reaction gas flowing out of the second mixed gas outlet hole enters the gas spraying plate through the first gas through hole;
yttrium oxide coatings are arranged on the inner walls of the first gas inlet hole and the second gas inlet hole and the bottom surface of the supporting baffle; the first gas baffle and the second gas baffle are made of corrosion-resistant plastics.
In another aspect, the present invention also provides a plasma processing apparatus comprising: the gas showerhead assembly of any of claims 1-9, wherein the first gas through-hole in the gas showerhead assembly is in communication with at least one reactive gas source comprising chlorine gas.
Compared with the prior art, the invention has the following advantages:
the invention provides a gas shower head component used for a plasma processing device, comprising: the supporting baffle is positioned below the supporting baffle and forms a mounting substrate of a closed space with the supporting baffle; the lower surface of the gas spraying plate faces the processing space inside the plasma processing device, a plurality of first gas through holes are formed in the mounting substrate, a plurality of second gas through holes are formed in the gas spraying plate, and the first gas through holes correspond to the second gas through holes in position, so that the closed space is in gas communication with the processing space below the gas spraying plate; a corrosion-resistant material layer is formed on the surface of the side wall of the first gas through hole in the mounting substrate, and the corrosion-resistant material layer is a Teflon coating, an acrylic resin coating or an epoxy resin coating. Therefore, for the plurality of first gas through holes on the mounting substrate, the aperture of each first gas through hole is very small, for example, 6mm, and the coating formed on the hole wall of the first gas through hole by adopting the conventional spraying mode cannot effectively cover all hole wall surfaces in the hole, so that the risk of corrosion exists on the hole wall of the first gas through hole.
And the adopted flow irrigation process can be repeatedly used, namely, the flow irrigation process is suitable for mass production, so that the manufacturing efficiency of the mounting substrate is improved.
The specific corrosion-resistant material layer adopts a Teflon material layer or a Teflon coating, and the Teflon coating has excellent high temperature resistance and low temperature resistance, namely the use temperature range is from minus 200 ℃ to minus 260 ℃, so that the Teflon coating is very suitable for protecting the mounting substrate. Therefore, the corrosion resistance, the sealing performance and the service life of the mounting substrate can be improved by adopting the Teflon material layer or the Teflon coating layer.
In addition, the edge of the mounting substrate includes the connecting ring protruding upwards, the upper surface of the mounting substrate surrounded by the connecting ring is coated with the anti-corrosion material layer, and the upper surface of the connecting ring is electrically connected with the supporting baffle, so that the upper surface of the mounting substrate surrounded by the connecting ring is coated with the anti-corrosion material layer, thereby protecting the mounting substrate from being corroded by the corrosive reaction gas introduced in the subsequent process, further improving the etching precision and the product yield, and prolonging the service life of the gas shower head assembly, and reducing the production cost due to the fact that the service life of the gas shower head assembly is prolonged without frequently replacing corroded components in the gas shower head assembly, such as the mounting substrate.
Drawings
FIG. 1 is a schematic view of a main structure of a gas showerhead assembly according to an embodiment of the present invention;
FIG. 2 is a schematic view of a mounting substrate in a gas showerhead assembly according to one embodiment of the invention.
Detailed Description
As described in the background art, the wafer of the gas shower head assembly in the prior art is contaminated due to corrosion, which affects the final etching precision and the product yield, and the service life of the gas shower head assembly is reduced, and the corroded parts in the gas shower head assembly need to be frequently replaced, which results in an increase in the production cost of the product. It has been found that, during the operation of a plasma processing apparatus, such as an etching (etch) apparatus, a mounting substrate (pedestal) of a gas shower head assembly in the prior art may flow through the mounting substrate due to various corrosive gases (such as BCl3 and Cl 2), and particularly, a strong oxidizing gas and an acidic gas in the various corrosive gases may directly react with the substrate of the mounting substrate, so as to cause metal and particle contamination, and further cause a contaminated product (such as a wafer), thereby affecting the etching precision and the product yield of the product. And the existence of the corrosion phenomenon reduces the service life of the mounting substrate, and when the mounting substrate is used for a long time, the mounting substrate needs to be frequently replaced, which leads to the increase of the preparation cost of the product.
Based on the above research, the present embodiment provides a gas shower head assembly for a plasma processing apparatus, comprising: the supporting baffle is positioned below the supporting baffle and forms a mounting substrate of a closed space with the supporting baffle; the lower surface of the gas spraying plate faces to a processing space inside the plasma processing device, a plurality of first gas through holes are formed in the mounting substrate, a plurality of second gas through holes are formed in the gas spraying plate, and the first gas through holes correspond to the second gas through holes in position, so that the closed space is in gas communication with the processing space below the gas spraying plate; a corrosion-resistant material layer is formed on the surface of the side wall of the first gas through hole in the mounting substrate, and the corrosion-resistant material layer is a Teflon coating, an acrylic resin coating or an epoxy resin coating. Therefore, for the plurality of first gas through holes on the mounting substrate, the aperture of each first gas through hole is very small, for example 6mm, and the coating formed on the hole walls of the first gas through holes by adopting a conventional spraying mode cannot effectively cover all hole wall surfaces in the holes, so that the risk of corrosion exists on the hole walls of the first gas through holes.
And the adopted flow irrigation process can be repeatedly used, namely, the method is suitable for mass production, so that the manufacturing efficiency of the mounting substrate is improved.
The specific corrosion-resistant material layer adopts a Teflon material layer or a Teflon coating, and the Teflon coating has excellent high-temperature resistance and low-temperature resistance, namely the service temperature range is from minus 200 ℃ to minus 260 ℃, so that the Teflon coating is very suitable for protecting the mounting substrate. Therefore, the corrosion resistance, the sealing performance and the service life of the mounting substrate can be improved by adopting the Teflon material layer or the Teflon coating layer.
In addition, the edge of the mounting substrate includes the upwardly protruding connection ring, the upper surface of the mounting substrate surrounded by the connection ring is coated with the corrosion-resistant material layer, and the upper surface of the connection ring is electrically connected with the support baffle, so that the mounting substrate is protected from being corroded by the corrosive reaction gas introduced in the subsequent process by coating the corrosion-resistant material layer on the upper surface of the mounting substrate surrounded by the connection ring, the etching precision and the product yield are further improved, the service life of the gas shower head assembly is prolonged, and the preparation cost of the product is reduced because the service life of the gas shower head assembly is prolonged without frequently replacing corroded components in the gas shower head assembly, such as the mounting substrate.
The following describes in more detail embodiments of the present invention with reference to the schematic drawings. Advantages and features of the present invention will become apparent from the following description and claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is provided for the purpose of facilitating and clearly illustrating embodiments of the present invention.
In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. It will of course be appreciated that in the development of any such actual embodiment, numerous implementation-specific details must be set forth in order to achieve the developer's specific goals, such as compliance with system-related and business-related constraints, which will vary from one implementation to another. Moreover, it will be appreciated that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art.
It is to be noted that the drawings are in a very simplified form and employ non-precise ratios for the purpose of facilitating and distinctly facilitating the description of one embodiment of the present invention.
Referring to fig. 1 and 2, a gas showerhead assembly according to the present embodiment includes: a support baffle 100, a mounting substrate 200 located below the support baffle 100 and forming a closed space therewith; a corrosion-resistant material layer (not shown) is formed on the surface of the mounting substrate 200. The edge of the mounting substrate 200 includes a connection ring (not numbered) protruding upward, the upper surface of the mounting substrate 200 surrounded by the connection ring is coated with the above-mentioned corrosion resistant material layer, the upper surface of the connection ring is electrically connected to the support baffle 100, and in particular, the corrosion resistant material layer may be formed on the surface (also referred to as a top surface) of the mounting substrate 200 exposed to the reaction gas in the enclosed space; therefore, according to the invention, the anti-corrosion material layer is coated on the upper surface of the mounting substrate surrounded by the connecting ring, so that the mounting substrate is protected from being corroded by the corrosive reaction gas introduced in the subsequent process, the etching precision and the product yield are further improved, the service life of the gas shower head assembly is prolonged, and the corroded parts in the gas shower head assembly, such as the mounting substrate, do not need to be frequently replaced, and the preparation cost of the product is reduced.
Preferably, the corrosion-resistant material layer is a teflon coating, an acrylic resin coating or an epoxy resin coating. The Teflon coating has excellent high temperature resistance and low temperature resistance, namely the service temperature range is between 200 ℃ below zero and 260 ℃ above zero, so that the Teflon coating is very suitable for protecting the mounting substrate. Therefore, the corrosion resistance, the sealing performance and the service life of the mounting substrate can be improved by adopting the Teflon material layer or the Teflon coating.
Further, a gas spray plate 700 is further included below the mounting substrate 200, a lower surface of the gas spray plate 700 faces a processing space inside the plasma processing apparatus, a plurality of first gas through holes 201 are formed in the mounting substrate 200, a plurality of second gas through holes (not numbered) are formed in the gas spray plate 700, and the first gas through holes 201 correspond to the second gas through holes in position, so that the closed space and the processing space below the gas spray plate 700 are in gas communication with each other; a corrosion-resistant material layer is formed on the surface of the sidewall or the wall of each first gas through hole 201 in the mounting substrate 200, and the corrosion-resistant material layer is a teflon coating, an acrylic resin coating or an epoxy resin coating. In this embodiment, the formation of the anti-corrosion material layer on the wall of each of the first gas through holes 201 is performed by a flow-filling process. Specifically, the flow irrigation process comprises the following steps: blocking one opening of each first gas through hole 201 by adopting a jig; pouring liquid paint from the other opening of each first gas through hole 201, and pouring the liquid paint out after the liquid paint is placed in each first gas through hole 201 for a preset time; sintering each of the first gas through holes 201 so that the liquid coating on the hole wall of each of the first gas through holes 201 forms the corrosion-resistant material layer in a solid state.
Therefore, in the embodiment, the anti-corrosion material layer is formed on the side wall of the first gas through hole 201 by adopting the flow-filling process, so that the hole wall of each first gas through hole is completely covered by the anti-corrosion coating, and the risk of corrosion of the first gas through hole is reduced, thereby further improving the etching precision and the product yield, prolonging the service life of the gas shower head assembly, and reducing the preparation cost of the product. The problem of for a plurality of first gas through-hole on the mounting substrate, the aperture of each first gas through-hole is very little, for example 6mm, and it adopts the coating that conventional spraying mode formed on the pore wall of first gas through-hole can't cover all pore wall surfaces in the downthehole effectively, has the risk of being corroded on the pore wall of first gas through-hole is solved.
Preferably, a sealing ring accommodating groove is formed at a contact position of the bottom of the support baffle 100 and the mounting substrate 200, and a sealing ring 300 is arranged in the sealing ring accommodating groove, so that the whole gas shower head assembly can be isolated from the atmosphere in the use process. And due to the existence of the sealing ring 300, the reaction gas is sealed in the sealed cavity, so that the corrosion-resistant material layer is not formed on the edge of the mounting substrate 200, thereby saving the use of the corrosion-resistant material layer and reducing the preparation cost of the mounting substrate 200.
Further, the gas shower head assembly provided by the present embodiment further includes: a first gas baffle 400 disposed below the support baffle 100, an
A second gas baffle 500 disposed below the first gas baffle 400; the first gas baffle 400 and the second gas baffle 500 are disposed in the enclosed space.
Further, the mounting substrate 200 is connected to a gas shower plate 700 located therebelow.
Further, the supporting baffle 100 is provided with at least one first gas inlet hole (not numbered in the figure) for introducing a first gas and at least one second gas inlet hole (not numbered in the figure) for introducing a second gas;
the first gas baffle 400 is provided with a first mixing channel (not shown) for mixing the first gas and the second gas, and at least one first mixed gas outlet hole (not numbered) penetrating through the first gas baffle 400;
the second gas baffle 500 is provided with a second mixing channel (not shown) for mixing the first gas and the second gas, and at least one second mixed gas outlet hole (not numbered) penetrating through the second gas baffle 500;
the first mixed gas outlet hole is connected with the second mixing channel, and the reaction gas mixed by the first gas baffle 400 is conveyed to the second mixing channel for secondary mixing; the reaction gas flowing out from the second mixed gas outlet enters the gas spray plate 700 through the first gas through hole 201; yttrium oxide coatings are arranged on the first gas inlet hole, the second gas inlet hole and the bottom surface of the supporting baffle 100; the first gas baffle 400 and the second gas baffle 500 are made of corrosion-resistant plastic.
Therefore, the first gas inlet hole, the second gas inlet hole and the bottom surface of the support baffle 100 are provided with yttria coatings; the first gas baffle 400 and the second gas baffle 500 are made of corrosion-resistant plastics, so that the aluminum material can be effectively protected from being corroded in the mixing process of corrosive gas; the first gas baffle and the second gas baffle are made of corrosion-resistant plastics, and the corrosion-resistant plastics are stable and have good corrosion resistance, so the first gas baffle and the second gas baffle cannot be corroded in the gas mixing process. Compared with the prior mode of making an anodic oxidation layer on the surface of the aluminum material, the corrosion-resistant gas shower head component provided by the invention is more corrosion-resistant and saves the cost. The problem of corrosion of corrosive gas to the gas spray head assembly in the mixing process is fundamentally solved, so that the service life of the gas spray head assembly is greatly prolonged, and the influence of impurities generated by corrosion of the gas spray head assembly on the subsequent process is avoided.
Further, in practical applications, the gas inlet pipe 600 is connected to the first gas inlet hole and the second gas inlet hole to introduce the corrosive gas into the gas shower head assembly. Preferably, the material of the inlet pipe 600 is hastelloy material to prevent corrosion of gas.
In another aspect, based on the same inventive concept, the present invention also provides a plasma processing apparatus comprising: the gas showerhead assembly as described above, wherein the first gas through-hole in the gas showerhead assembly is in communication with at least one reactive gas source comprising chlorine gas. Specifically, the equipment comprises a vacuum reaction cavity, wherein the vacuum reaction cavity comprises a roughly cylindrical reaction cavity side wall made of a metal material, a gas spray assembly is arranged above the reaction cavity side wall, and the gas spray assembly is connected with a gas supply device. The reaction gas in the gas supply device enters a vacuum reaction cavity through the gas shower head assembly, a base for supporting the electrostatic chuck is arranged below the vacuum reaction cavity, the electrostatic chuck is used for placing a substrate to be processed, the radio frequency power of the radio frequency power source is applied to the base, an electric field for dissociating the reaction gas into plasma is generated in the reaction cavity, the plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, free radicals and the like, and the active particles can perform various physical and chemical reactions with the surface of the substrate to be processed, so that the appearance of the surface of the substrate is changed, and the etching process is completed. An exhaust pump is arranged below the vacuum reaction cavity and used for exhausting the reaction by-products out of the vacuum reaction cavity.
Further, it will be understood that, although the terms "first", "second", etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of exemplary embodiments according to the present invention.
For ease of description, spatially relative terms such as "under 8230; \8230;," under 8230;, "" over 8230;, "" under 8230;, \8230;, "" over 8230;, "over", "upper" and "lower" etc. may be used herein to describe one element or feature's spatial relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" or "over" the other elements or features. Thus, the exemplary terms "at 8230; \8230; below" may include both orientations "at 8230; \8230; above" and "at 8230; \8230; below". The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular is intended to include the plural unless the context clearly dictates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
In summary, the present invention provides a showerhead assembly for a plasma processing apparatus, comprising: the supporting baffle is positioned below the supporting baffle and forms a mounting substrate of a closed space with the supporting baffle; the lower surface of the gas spraying plate faces to a processing space inside the plasma processing device, a plurality of first gas through holes are formed in the mounting substrate, a plurality of second gas through holes are formed in the gas spraying plate, and the first gas through holes correspond to the second gas through holes in position, so that the closed space is in gas communication with the processing space below the gas spraying plate; a corrosion-resistant material layer is formed on the surface of the side wall of the first gas through hole in the mounting substrate, and the corrosion-resistant material layer is a Teflon coating, an acrylic resin coating or an epoxy resin coating. Therefore, for the plurality of first gas through holes on the mounting substrate, the aperture of each first gas through hole is very small, for example, 6mm, and the coating formed on the hole wall of the first gas through hole by adopting the conventional spraying mode cannot effectively cover all hole wall surfaces in the hole, so that the risk of corrosion exists on the hole wall of the first gas through hole.
And the adopted flow irrigation process can be repeatedly used, namely, the method is suitable for mass production, so that the manufacturing efficiency of the mounting substrate is improved.
The specific corrosion-resistant material layer adopts a Teflon material layer or a Teflon coating, and the Teflon coating has excellent high temperature resistance and low temperature resistance, namely the use temperature range is from minus 200 ℃ to minus 260 ℃, so that the Teflon coating is very suitable for protecting the mounting substrate. Therefore, the corrosion resistance, the sealing performance and the service life of the mounting substrate can be improved by adopting the Teflon material layer or the Teflon coating.
In addition, the edge of the mounting substrate includes the connecting ring protruding upwards, the upper surface of the mounting substrate surrounded by the connecting ring is coated with the anti-corrosion material layer, and the upper surface of the connecting ring is electrically connected with the supporting baffle, so that the upper surface of the mounting substrate surrounded by the connecting ring is coated with the anti-corrosion material layer, thereby protecting the mounting substrate from being corroded by the corrosive reaction gas introduced in the subsequent process, further improving the etching precision and the product yield, and prolonging the service life of the gas shower head assembly, and reducing the production cost due to the fact that the service life of the gas shower head assembly is prolonged without frequently replacing corroded components in the gas shower head assembly, such as the mounting substrate.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (9)
1. A gas showerhead assembly for a plasma processing apparatus, comprising:
the supporting baffle is positioned below the supporting baffle and forms a mounting substrate of a closed space with the supporting baffle; the lower surface of the gas spraying plate faces to a processing space inside the plasma processing device, a plurality of first gas through holes are formed in the mounting substrate, a plurality of second gas through holes are formed in the gas spraying plate, and the first gas through holes correspond to the second gas through holes in position, so that the closed space is in gas communication with the processing space below the gas spraying plate; a corrosion-resistant material layer is formed on the surface of the side wall of the first gas through hole in the mounting substrate, and the corrosion-resistant material layer is a Teflon coating, an acrylic resin coating or an epoxy resin coating;
and when the corrosion-resistant material layer is formed on the hole wall of each first gas through hole, a flow irrigation process is adopted.
2. The gas showerhead assembly of claim 1, wherein each of the first gas through holes has a diameter of less than 6mm.
3. The gas showerhead assembly of claim 2, wherein the flow-through process comprises:
blocking one opening of each first gas through hole by adopting a jig;
pouring liquid coating from the other opening of each first gas through hole, and pouring the liquid coating out after the liquid coating is placed in each first gas through hole for preset time;
sintering each first gas through hole, so that the liquid coating on the hole wall of each first gas through hole forms the solid corrosion-resistant material layer.
4. The gas showerhead assembly of claim 1, wherein the mounting substrate edge includes an upwardly projecting coupling ring, an upper surface of the mounting substrate surrounded by the coupling ring being coated with a layer of corrosion resistant material, the upper surface of the coupling ring being conductively coupled to the support shield.
5. The gas showerhead assembly of claim 4,
and a sealing ring accommodating groove is formed in the contact part of the bottom of the supporting baffle and the mounting substrate, and a sealing ring is arranged in the sealing ring accommodating groove.
6. The gas showerhead assembly of claim 5, further comprising:
a first gas baffle disposed below the support baffle, an
A second gas baffle disposed below the first gas baffle; the first gas baffle and the second gas baffle are arranged in the closed space.
7. The gas showerhead assembly of claim 1,
the mounting substrate is connected with a gas spraying plate positioned below the mounting substrate.
8. The gas showerhead assembly of claim 6,
the supporting baffle is provided with at least one first gas inlet hole for introducing first gas and at least one second gas inlet hole for introducing second gas;
the first gas baffle is provided with a first mixing channel for mixing a first gas and a second gas and at least one first mixed gas outlet hole penetrating through the first gas baffle;
the second gas baffle is provided with a second mixing channel for mixing the first gas and the second gas and at least one second mixed gas outlet hole penetrating through the second gas baffle;
the first mixed gas outlet hole is connected with the second mixing channel, and the reaction gas mixed by the first gas baffle is conveyed to the second mixing channel for secondary mixing;
the reaction gas flowing out of the second mixed gas outlet hole enters the gas spraying plate through the first gas through hole;
yttrium oxide coatings are arranged on the inner walls of the first gas inlet hole and the second gas inlet hole and the bottom surface of the supporting baffle; the first gas baffle and the second gas baffle are made of corrosion-resistant plastics.
9. A plasma processing apparatus, comprising: the gas showerhead assembly of any of claims 1-8, wherein the first gas through-hole in the gas showerhead assembly is in communication with at least one reactive gas source comprising chlorine gas.
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101335192A (en) * | 2007-06-27 | 2008-12-31 | 东京毅力科创株式会社 | Substrate processing apparatus and shower head |
CN101359580A (en) * | 2007-08-01 | 2009-02-04 | 爱德牌工程有限公司 | Substrate processing apparatus having a sensing unit |
CN101370350A (en) * | 2007-06-11 | 2009-02-18 | 东京毅力科创株式会社 | Plasma processing system, antenna, and use of plasma processing system |
CN103903946A (en) * | 2012-12-26 | 2014-07-02 | 中微半导体设备(上海)有限公司 | Gas spray head used for plasma reactor |
CN104715993A (en) * | 2013-12-13 | 2015-06-17 | 中微半导体设备(上海)有限公司 | Plasma processing cavity, gas spraying head and manufacturing method thereof |
CN105132889A (en) * | 2015-09-14 | 2015-12-09 | 沈阳拓荆科技有限公司 | Double gas circuit center gas intake structure applied to spray head of thin film deposition device |
JP2018121051A (en) * | 2017-01-20 | 2018-08-02 | 東京エレクトロン株式会社 | Plasma processing device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8852685B2 (en) * | 2010-04-23 | 2014-10-07 | Lam Research Corporation | Coating method for gas delivery system |
US20140235069A1 (en) * | 2013-02-15 | 2014-08-21 | Novellus Systems, Inc. | Multi-plenum showerhead with temperature control |
CN105441904B (en) * | 2014-06-18 | 2018-06-26 | 中微半导体设备(上海)有限公司 | Gas shower device, chemical vapor deposition unit and method |
US9510678B2 (en) * | 2014-09-18 | 2016-12-06 | Hamad F. H. S. Aleisa | Modular shelving |
-
2019
- 2019-10-25 CN CN201911024420.2A patent/CN112713074B/en active Active
-
2020
- 2020-09-30 TW TW109134025A patent/TWI790482B/en active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101370350A (en) * | 2007-06-11 | 2009-02-18 | 东京毅力科创株式会社 | Plasma processing system, antenna, and use of plasma processing system |
CN101335192A (en) * | 2007-06-27 | 2008-12-31 | 东京毅力科创株式会社 | Substrate processing apparatus and shower head |
CN101359580A (en) * | 2007-08-01 | 2009-02-04 | 爱德牌工程有限公司 | Substrate processing apparatus having a sensing unit |
CN103903946A (en) * | 2012-12-26 | 2014-07-02 | 中微半导体设备(上海)有限公司 | Gas spray head used for plasma reactor |
CN104715993A (en) * | 2013-12-13 | 2015-06-17 | 中微半导体设备(上海)有限公司 | Plasma processing cavity, gas spraying head and manufacturing method thereof |
CN105132889A (en) * | 2015-09-14 | 2015-12-09 | 沈阳拓荆科技有限公司 | Double gas circuit center gas intake structure applied to spray head of thin film deposition device |
JP2018121051A (en) * | 2017-01-20 | 2018-08-02 | 東京エレクトロン株式会社 | Plasma processing device |
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CN112713074A (en) | 2021-04-27 |
TWI790482B (en) | 2023-01-21 |
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