CN114203506B - Plasma processing device and method thereof - Google Patents
Plasma processing device and method thereof Download PDFInfo
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- CN114203506B CN114203506B CN202010987374.2A CN202010987374A CN114203506B CN 114203506 B CN114203506 B CN 114203506B CN 202010987374 A CN202010987374 A CN 202010987374A CN 114203506 B CN114203506 B CN 114203506B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Abstract
The invention discloses a plasma processing device and a method thereof, wherein the device comprises: a vacuum reaction chamber having a lower electrode assembly and a movable upper electrode assembly therein; the lifting devices are connected with the movable upper electrode assembly to enable the movable upper electrode assembly to lift, and each lifting device comprises a support column and a driving device, and the driving devices are used for driving the support columns to enable the movable upper electrode assembly to lift; a plurality of gas channels respectively extending from the outside of the vacuum reaction chamber to the bottom of the vacuum reaction chamber, the inside of the support column and the movable upper electrode assembly so as to inject process gas into the vacuum reaction chamber; the plurality of conductive telescopic sealing structures are respectively arranged in the support columns and encircle the periphery of the gas channel. The advantages are that: the lifting device, the gas channel and the sealing structure are combined, the movable upper electrode assembly is not influenced by repeated switching on and off of the top of the vacuum reaction cavity, concentricity between the movable upper electrode assembly and the wafer and between the movable upper electrode assembly and the movable lower electrode assembly is easier to maintain, and the technical effect of bevel edge etching is ensured.
Description
Technical Field
The invention relates to the field of semiconductor equipment, in particular to a plasma processing device and a method thereof.
Background
During wafer processing, wafers or films deposited on wafers are often etched by a plasma gas. In the whole process, the upper electrode assembly of the plasma processing device and the centering of the wafer have great influence on the etching effect of the wafer.
Most of the existing plasma processing apparatuses are designed with a movable upper electrode assembly, which is widely used in the field of wafer etching, especially wafer edge etching (wafer edge etching). When the wafer is conveyed to enter and exit the vacuum reaction cavity, the upper electrode assembly is lifted; when the wafer is processed, the upper electrode assembly is lowered and a slight distance is left between the upper electrode assembly and the wafer. Therefore, when the upper electrode assembly is lowered to the vicinity of the wafer, it is required to maintain extremely high concentricity with the wafer and the lower electrode assembly, so that the portion of the wafer edge exposed to the plasma is symmetrical in the circumferential direction, and uniform etching can be obtained to ensure the bevel edge etching (bevel etching) effect.
In a plasma processing device, an upper electrode assembly is usually connected with a cavity end cover of a vacuum reaction cavity, the cavity end cover is required to be frequently opened to adjust the structure in the cavity during daily operation and maintenance, and the cavity end cover is required to be subjected to centering adjustment again after each turn-over switch and is linked with the upper electrode assembly, so that the upper electrode assembly and a wafer keep high concentricity, but the working time of the plasma processing device can be influenced by longer time. In addition, the upper electrode assembly connected with the cavity end cover after the cavity end cover turns over the switch for many times can deviate, and even after the cavity end cover finishes centering adjustment, the etched area at the edge of the wafer can deviate, so that the etching effect is affected.
Disclosure of Invention
The invention aims to provide a plasma processing device and a method thereof, wherein the plasma processing device realizes the support and lifting of a movable upper electrode assembly through a lifting device, so that a gas channel of the movable upper electrode assembly conveys process gas to a vacuum reaction cavity through a support column of the lifting device, a sealing structure is arranged to ensure the gas environment of the vacuum reaction cavity, and the movable upper electrode assembly is not connected with the top of the vacuum reaction cavity, so that the concentricity among the movable upper electrode assembly, a wafer and a lower electrode assembly is easier to maintain in the using process of the device, the process effect of bevel edge etching is ensured, the energy and time loss of workers are reduced, and the development of a wafer etching process is facilitated.
In order to achieve the above purpose, the present invention is realized by the following technical scheme:
a plasma processing apparatus, comprising:
the vacuum reaction chamber is internally provided with a lower electrode assembly and a movable upper electrode assembly, wherein the lower electrode assembly is provided with a bearing surface for bearing a wafer to be processed;
the lifting devices are connected with the movable upper electrode assembly to enable the movable upper electrode assembly to lift, each lifting device comprises a support column and a driving device, one end of each support column is connected with the movable upper electrode assembly, the other end of each support column is connected with the driving device, and the driving device is used for driving the support column to enable the movable upper electrode assembly to lift;
the gas channels respectively extend from the outside of the vacuum reaction cavity to pass through the bottom of the vacuum reaction cavity, the inside of the support column and the movable upper electrode assembly, and are used for injecting process gas into the vacuum reaction cavity;
the sealing structures are arranged in the supporting columns respectively, the sealing structures are arranged around the gas channels in a surrounding mode, one ends of the sealing structures are connected with the bottom of the movable upper electrode assembly, and the other ends of the sealing structures are connected with the bottom of the vacuum reaction cavity.
Optionally, a plurality of groove structures are formed at the bottom of the vacuum reaction chamber, the driving device drives the support column to lift so as to drive the movable upper electrode assembly to lift, and when the movable upper electrode assembly is in a low position, the bottom of the support column is located in the groove structures so as to align the centers of the movable upper electrode assembly and the wafer.
Optionally, the movable upper electrode assembly includes:
the insulating isolation part is arranged at the bottom of the movable upper electrode assembly and is opposite to the central area of the wafer;
an upper electrode ring surrounding the outer side of the insulating isolation part, wherein the upper electrode ring is arranged opposite to the wafer edge area;
the lower electrode assembly includes:
the lower electrode ring is arranged around the wafer edge area, and the lower electrode ring and the upper electrode ring are arranged oppositely.
Optionally, the gas channel is an edge gas channel comprising an edge shower port to inject the first gas over the wafer edge region or a central gas channel comprising a central shower port to inject the second gas over the wafer central region.
Optionally, the first gas in the edge gas inlet channel comprises an etching gas and/or a cleaning gas containing F, cl;
the second gas within the central intake passage includes a purge gas and/or a buffer gas.
Optionally, the edge gas inlet channel adopts a multi-path distribution structure in the movable upper electrode assembly, and the multi-path distribution structure comprises a plurality of edge spraying ports, wherein the edge spraying ports are uniformly distributed along the edge area of the wafer so as to uniformly inject the first gas into the edge area of the wafer.
Optionally, the inner surface of the gas channel is provided with a plating layer of corrosion resistant material.
Optionally, the number of the lifting devices, the number of the gas channels and the number of the sealing structures are three, each lifting device is uniformly distributed along the circumferential direction of the movable upper electrode assembly, each gas channel passes through the inside of a supporting column of each lifting device, and each sealing structure surrounds each gas channel.
Optionally, the support column is a ceramic hollow column;
and/or the driving device is a stepping motor or an air cylinder;
and/or, the sealing structure is a metal corrugated pipe;
and/or, the sealing structure comprises a corrugated pipe and a metal piece, one end of the corrugated pipe is connected with the bottom of the movable upper electrode assembly, the other end of the corrugated pipe is connected with the bottom of the vacuum reaction cavity, one end of the metal piece is connected with the bottom of the movable upper electrode assembly, and the other end of the metal piece is connected with the bottom of the vacuum reaction cavity.
Optionally, the top of the vacuum reaction chamber is a chamber end cover, the chamber end cover is made of transparent material, and a plurality of optical processing devices are arranged above the vacuum reaction chamber to monitor concentricity of the movable upper electrode assembly.
Optionally, the top of the vacuum reaction chamber is a chamber end cover, and the chamber end cover is provided with a metal shielding net structure.
Optionally, a distance between an edge side of the movable upper electrode assembly and a sidewall of the vacuum reaction chamber is less than 1cm.
Optionally, a plasma processing method includes:
providing the plasma processing apparatus;
injecting process gas into the vacuum reaction chamber through the gas channel;
the movable upper electrode assembly is lifted and lowered by driving the supporting columns through the driving device so as to generate a plasma environment between the movable upper electrode assembly and the movable lower electrode assembly to etch the edge area of the wafer.
Compared with the prior art, the invention has the following advantages:
according to the plasma processing device and the method thereof, the supporting and lifting of the movable upper electrode assembly are realized through the lifting device, so that the gas channel of the movable upper electrode assembly conveys process gas to the vacuum reaction cavity through the supporting column of the lifting device, the sealing structure is arranged to ensure the gas environment of the vacuum reaction cavity, the movable upper electrode assembly is not connected with the top of the vacuum reaction cavity, the movable upper electrode assembly is not influenced by repeated switching on and off of the top of the vacuum reaction cavity, the concentricity between the movable upper electrode assembly and the wafer and the lower electrode assembly is easier to maintain in the using process of the device, the technical effect of bevel edge etching is ensured, the energy and time loss of workers are reduced, and the development of the wafer etching process is facilitated.
Further, the sealing structure is arranged inside the support column, so that the sealing structure is free from the interference of a plasma environment, and the ignition phenomenon is avoided.
Furthermore, the bottom of the vacuum reaction cavity is provided with a groove structure, and concentricity among the movable upper electrode assembly, the wafer and the lower electrode assembly can be ensured only by clamping the support column into the groove structure when the movable upper electrode assembly is in a low position.
Drawings
For a clearer description of the technical solutions of the present invention, the drawings that are needed in the description will be briefly introduced below, it being obvious that the drawings in the following description are one embodiment of the present invention, and that, without inventive effort, other drawings can be obtained by those skilled in the art from these drawings:
FIG. 1 is a schematic view of a plasma processing apparatus according to the present invention;
fig. 2 is another plasma processing apparatus according to the present invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, in this document, the terms "comprises," "comprising," "has," "having," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal device. Without further limitation, an element defined by the statement "comprising … …" or "comprising … …" does not exclude the presence of additional elements in a process, method, article or terminal device comprising the element.
It is noted that the drawings are in a very simplified form and utilize non-precise ratios for convenience and clarity in aiding in the description of one embodiment of the invention.
As shown in fig. 1, a plasma processing apparatus according to the present invention includes: a vacuum reaction chamber 100, which is formed by enclosing a reaction chamber body 101 and a chamber body end cover 102, wherein a wafer transfer port (not shown in the figure) is disposed on the reaction chamber body 101, and the wafer transfer port is used for transferring wafers W between the inside and the outside of the vacuum reaction chamber 100. The vacuum reaction chamber 100 includes a lower electrode assembly 110 disposed at the bottom of the vacuum reaction chamber 100, the lower electrode assembly 110 is provided with a carrying surface, and the wafer W to be processed introduced into the vacuum reaction chamber 100 is placed on the carrying surface. The vacuum reaction chamber 100 further includes a movable upper electrode assembly 120 disposed opposite to the lower electrode assembly 110, and at least one rf power source 130 is applied to the lower electrode assembly 110 through a matching network to dissociate the process gas into plasma, so that a plasma environment is formed between the movable upper electrode assembly 120 and the edge region of the lower electrode assembly 110, and the plasma environment contains a large amount of active particles such as electrons, ions, atoms in an excited state, molecules, free radicals, etc., which can react with the surface of the wafer W to be processed in various physical and/or chemical ways, so that the morphology of the edge of the wafer W to be processed is changed, and the edge processing of the wafer W to be processed is completed.
In this embodiment, the plasma processing apparatus is suitable for the wafer W edge etching field. In the process of processing the wafer W into the design pattern by plasma etching, some redundant film layers, such as polysilicon layer, nitride layer, metal layer, etc., are accumulated on the outer edge region of the wafer W and the outer edge region of the back surface, and these redundant film layers may pollute the subsequent process and equipment, so that they need to be removed by the bevel edge etching process.
As shown in fig. 1, a plasma processing apparatus for processing an edge of a wafer in this embodiment includes a plurality of lifting devices, each of which is connected to the movable upper electrode assembly 120 to lift the movable upper electrode assembly 120.
Specifically, the lifting device includes a support column 140 and a driving device 170, one end of the support column 140 is connected with the movable upper electrode assembly 120, the other end of the support column 140 is connected with the driving device 170 through a transmission assembly, the transmission assembly transmits the driving force of the driving device 170, and the driving device 170 drives the transmission assembly to further drive the support column 140 so as to lift the movable upper electrode assembly 120.
Optionally, the support columns 140 are hollow in structure to accommodate the remaining components. In this embodiment, the support columns 140 are ceramic hollow columns. The driving device 170 is disposed outside the vacuum reaction chamber 100, and a plurality of sealing members 141 (such as bellows) are disposed at the connection positions of the transmission assembly and each component to protect the gas environment in the vacuum reaction chamber 100. Optionally, the driving device 170 is a stepper motor or an air cylinder, and of course, the type and structure of the driving structure are not limited to the above two types, but may be other types or structures, as long as the driving of the support column 140 can be implemented to complete the lifting of the support column 140.
The movable upper electrode assembly 120 includes a plurality of gas channels 150, each gas channel 150 extends from the outside of the vacuum reaction chamber 100 through the bottom of the vacuum reaction chamber 100, the inside of the support column 140, and the movable upper electrode assembly 120, and the gas channel 150 is used for injecting a plurality of process gases into the vacuum reaction chamber 100. Further, a plasma corrosion resistant coating is disposed on the inner surface of the gas channel 150 to protect the inner surface of the gas channel 150 from particle falling off and polluting the cavity environment of the vacuum reaction chamber 100. Optionally, the plasma corrosion resistant coating material is a teflon coating or an yttrium oxide film or an anodic aluminum oxide layer.
In addition, the plasma processing apparatus further comprises a plurality of conductive and telescopic sealing structures 160, each sealing structure 160 is disposed in the support column 140, the sealing structures 160 are disposed around the gas channel 150, one end of each sealing structure 160 is connected to the bottom of the movable upper electrode assembly 120, and the other end is connected to the bottom of the vacuum reaction chamber 100 to protect the gas environment of the vacuum reaction chamber 100 and to ground the movable upper electrode assembly 120. In this embodiment, the sealing structure 160 is a metal bellows, which has a simple structure and is convenient to install, and can better protect the gas environment in the vacuum reaction chamber 100 and realize the grounding of the movable upper electrode assembly 120.
Of course, the composition and structure of the sealing structure 160 is not limited thereto, as long as it can achieve the sealing of the vacuum reaction chamber 100 and the grounding of the movable upper electrode assembly 120. For example, in another embodiment, the sealing structure 160 comprises a bellows made of a common material, one end of which is connected to the bottom of the movable upper electrode assembly 120, the other end of which is connected to the bottom of the vacuum reaction chamber 100, and a metal member, one end of which is connected to the bottom of the movable upper electrode assembly 120, and the other end of which is connected to the bottom of the vacuum reaction chamber 100.
In this embodiment, three lifting devices, gas channels 150 and sealing structures 160 are provided, each of the lifting devices is uniformly distributed along the circumference of the movable upper electrode assembly 120, each of the gas channels 150 passes through the inside of the support column 140 of each of the lifting devices, and each of the sealing structures 160 surrounds each of the gas channels 150.
In this embodiment, the support column 140 is connected to the driving device 170, the gas channel 150 is configured through the support column 140, and the sealing structure 160 is disposed in the support column 140, so that the support column 140 not only can support the movable upper electrode assembly 120, but also prevents the sealing structure 160 from being exposed to the plasma environment, thereby preventing the sealing structure 160 from being corroded by the plasma, and avoiding the ignition phenomenon of the conductive sealing structure 160 under the influence of the plasma or radio frequency. In addition, in this embodiment, there is no connection between the movable upper electrode assembly 120 and the cavity end cover 102, after the plasma processing apparatus is first installed and adjusted, the movable upper electrode assembly 120 only has a vertical movement process, and even if the cavity end cover 102 is turned over and switched for multiple times, the movable upper electrode assembly 120 does not need to be re-centered, so that manpower and material resources are saved to a greater extent, and time loss is reduced. The cavity end cover 102 and the movable upper electrode assembly 120 are not connected, so that the problem of deflection of the movable upper electrode assembly 120 caused by switching the cavity end cover 102 over and over for many times is avoided, concentricity between the movable upper electrode assembly 120 and the wafer W and between the movable upper electrode assembly 110 and the movable lower electrode assembly 110 is easier to maintain, the technical effect of bevel edge etching is ensured, the energy and time loss of staff is reduced, and the development of the wafer W etching process is facilitated.
Further, a plurality of groove structures 103 are provided at the bottom of the vacuum reaction chamber 100, the driving device 170 drives the support column 140 to lift so as to drive the movable upper electrode assembly 120 to lift, and when the movable upper electrode assembly 120 is in a low position, the bottom of the support column 140 is located in the groove structures 103, so that the centers of the movable upper electrode assembly 120 and the wafer W are aligned. The positioning function of the groove structure 103 is convenient for aligning the centers of the movable upper electrode assembly 120 and the wafer W, and in the vertical displacement process of the movable upper electrode assembly 120, the concentricity between the movable upper electrode assembly 120 and the wafer W and between the movable upper electrode assembly 110 and the movable lower electrode assembly 110 can be ensured as long as the support column 140 is clamped into the groove structure 103 in a low position. In addition, the space in the vacuum reaction chamber 100 is limited, and the groove structure 103 does not need to additionally install a centering tool in the vacuum reaction chamber 100, so that the space structure of the vacuum reaction chamber 100 is greatly saved, and the utilization rate of the space structure is increased.
In this embodiment, the movable upper electrode assembly 120 includes: an insulating spacer 121 and an upper electrode ring 122. The insulating spacer 121 is disposed at the bottom of the movable upper electrode assembly 120, opposite to the central region of the wafer W, and the insulating spacer 121 may have a layer structure or a bulk structure. The upper electrode ring 122 is disposed around the outer side of the insulating spacer 121, and the upper electrode ring 122 is disposed opposite to the edge region of the wafer W. The lower electrode assembly 110 includes a base and a lower electrode ring 111, the upper surface of the base is a dielectric layer formed by anodic oxidation, a plurality of lifting pins for conveying the wafer W are disposed in the base, the lower electrode ring 111 is disposed on the base (in an embodiment, the base has a stand portion, the lower electrode ring 111 is disposed on the stand portion) and radio frequency conduction is performed between the base and the lower electrode ring 111, the lower electrode ring 111 is disposed around the lower portion of the edge area of the wafer W (the lower electrode ring 111 may be also flat with the wafer W), and the lower electrode ring 111 and the upper electrode ring 122 are disposed opposite to each other. Specifically, the upper electrode ring 122 and the lower electrode ring 111 may be made of graphite or other carbon-based materials. During the process, plasma is generated between the upper electrode ring 122 and the lower electrode ring 111 to perform wafer W edge etching.
In addition, the plasma processing apparatus further includes a water chiller assembly and a heater disposed around the lower electrode assembly 110 to control the temperature of the edge of the wafer W during the process. An insulating ring 112 is further disposed around the outer side of the lower electrode assembly 110, and the insulating ring 112 is used for isolating radio frequency current of the lower electrode assembly 110. A plasma confinement assembly 113 is further disposed between the reaction chamber body 101 and the lower electrode assembly 110, and the plasma confinement assembly 113 is provided with a plurality of hole structures or slot structures, so as to ensure the conductivity of the gas in the vacuum reaction chamber 100, thereby preventing the plasma from diffusing and effectively controlling the pump conduction phenomenon. The plasma confinement assembly 113 is typically a metal material with a dielectric coating, such as an anodized material or a Y-containing material 2 O 3 And (3) plating aluminum.
Further, in the present embodiment, the gas channel 150 in the movable upper electrode assembly 120 is an edge gas inlet channel 151 or a central gas inlet channel 152. The edge gas inlet channel 151 employs a multi-path distribution structure within the movable upper electrode assembly 120, which includes a plurality of edge shower ports disposed in the upper electrode ring 122, each of the edge shower ports being uniformly distributed along an edge region of the wafer W (similar toA shower head structure) so as to uniformly inject the first gas above the edge region of the wafer W. The central gas inlet channel 152 includes a plurality of central gas inlets located above a central region of the wafer W for injecting a second gas above the central region of the wafer W. In a typical edge etching process, the first gas introduced into the edge gas inlet channel 151 contains an etching gas containing F, cl and O 2 And cleaning gases, as well as other auxiliary etching gases, to perform the edge etching process. The second gas introduced into the central gas inlet channel 152 contains a buffer gas or a cleaning gas, wherein the buffer gas is used for maintaining a high pressure above the wafer W during the edge processing of the wafer W so as to prevent the central area of the wafer W from being etched by the plasma environment, and the cleaning gas is used for cleaning the vacuum reaction chamber 100 when the wafer W is not present in the vacuum reaction chamber 100.
In the bevel edge etching process, a first gas (such as Ar, CF 4 、O 2 Etc.) enters the vacuum reaction chamber 100 above the edge area of the wafer W through the edge air inlet channel 151, and forms plasma under the excitation of radio frequency. These plasmas chemically react with the excessive film layer collected at the edge of the wafer W after passing through the electric field effect (capacitive coupling) between the movable upper electrode assembly 120 and the lower electrode assembly 110, thereby removing the excessive film layer generated during other processes. At the same time, the second gas is introduced into the vacuum chamber 100 through the central gas inlet channel 152 above the central region of the wafer W, i.e., below the insulating partition 121 of the movable upper electrode assembly 120, and the flow rate or pressure of the second gas can be adjusted to protect the central region of the wafer W from the plasma environment.
During the process, the first gas and the second gas enter the vacuum reaction chamber 100 through the edge gas inlet channel 151 and the central gas inlet channel 152, respectively, and when a certain gas and pressure (typically between several hundred mT and several T) are maintained in the vacuum reaction chamber 100, rf power is input to the lower electrode assembly 110 by the rf power supply 130, and plasma is formed through capacitive coupling between the lower electrode ring 111 and the upper electrode ring 122.
In addition, in this embodiment, a metal shielding mesh structure 104 is disposed on top of the cavity end cover 102 to shield the electric field inside the vacuum reaction chamber 100. Optionally, the cavity end cap 102 on the top of the vacuum reaction cavity 100 is made of the same material as the reaction cavity 101, so as to facilitate the processing and assembly of the plasma processing apparatus. Of course, the material of the cavity end cover 102 is not limited thereto, and may be other dielectric materials. In another embodiment, the material of the chamber end cap 102 is made of transparent material, and several optical processing devices are disposed above the vacuum reaction chamber 100, i.e., above the chamber end cap 102, to monitor concentricity between the movable upper electrode assembly 120 and the wafer W.
In another embodiment, the distance between the edge side of the movable upper electrode assembly 120 and the sidewall of the vacuum reaction chamber 100 is very small (see fig. 2), for example, the distance between the edge side of the movable upper electrode assembly 120 and the sidewall of the vacuum reaction chamber is smaller than 1cm, which can ensure that no friction occurs during the up-down movement of the movable upper electrode assembly 120, and at the same time, the plasma generated during the process is confined between the movable upper electrode assembly 120 and the lower electrode assembly 110 without diffusing into the space between the movable upper electrode assembly 120 and the chamber end cover 102, without providing an additional metal shielding mesh structure 104.
The invention also provides a plasma treatment method of the plasma treatment device, which specifically comprises the following steps: injecting a process gas into the vacuum reaction chamber 100 through the gas channel 150; the support columns 140 are driven by the driving device 170 to lift and lower the movable upper electrode assembly 120 so as to generate a plasma environment between the movable upper electrode assembly 120 and the lower electrode assembly 110 for etching the edge region of the wafer W.
In summary, according to the plasma processing apparatus and the method thereof of the present invention, the supporting and lifting of the movable upper electrode assembly 120 is realized by the supporting column 140 and the driving device 170 of the lifting device, so that the gas channel 150 of the movable upper electrode assembly 120 transmits the process gas to the vacuum reaction chamber 100 via the supporting column 140, and the sealing structure 160 is provided to ensure the gas environment of the vacuum reaction chamber 100, the movable upper electrode assembly 120 is not connected to the top of the vacuum reaction chamber 100, the top of the vacuum reaction chamber 100 is repeatedly opened and closed, the position of the movable upper electrode assembly 120 is not affected, the concentricity between the movable upper electrode assembly 120 and the wafer W and the lower electrode assembly 110 is more easily maintained during the use of the apparatus, the process effect of bevel edge etching is ensured, the loss of staff effort and time is reduced, and the development of the wafer W etching process is facilitated.
Further, the sealing structure 160 is disposed inside the supporting column 140, so that the sealing structure 160 is protected from the plasma environment, and the ignition phenomenon is avoided.
Further, the bottom of the vacuum reaction chamber 100 is provided with the groove structure 103, and concentricity among the movable upper electrode assembly 120, the wafer W and the lower electrode assembly 110 can be ensured only by clamping the support column 140 into the groove structure 103 when the movable upper electrode assembly 120 is at a low position.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (13)
1. A plasma processing apparatus, comprising:
the vacuum reaction chamber is internally provided with a lower electrode assembly and a movable upper electrode assembly, wherein the lower electrode assembly is provided with a bearing surface for bearing a wafer to be processed;
the lifting devices are connected with the movable upper electrode assembly to enable the movable upper electrode assembly to lift, each lifting device comprises a support column and a driving device, one end of each support column is connected with the movable upper electrode assembly, the other end of each support column is connected with the driving device, and the driving device is used for driving the support column to enable the movable upper electrode assembly to lift;
the gas channels respectively extend from the outside of the vacuum reaction cavity to pass through the bottom of the vacuum reaction cavity, the inside of the support column and the movable upper electrode assembly, and are used for injecting process gas into the vacuum reaction cavity;
the sealing structures are arranged in the supporting columns respectively, the sealing structures are arranged around the gas channels, one ends of the sealing structures are connected with the bottom of the movable upper electrode assembly, and the other ends of the sealing structures are connected with the bottom of the vacuum reaction cavity, so that the movable upper electrode assembly is grounded.
2. The plasma processing apparatus according to claim 1, wherein,
a plurality of groove structures are formed in the bottom of the vacuum reaction cavity, the driving device drives the supporting columns to lift so as to drive the movable upper electrode assembly to lift, and when the movable upper electrode assembly is in a low position, the bottoms of the supporting columns are located in the groove structures so that the centers of the movable upper electrode assembly and a wafer are aligned.
3. The plasma processing apparatus according to claim 1, wherein,
the movable upper electrode assembly includes:
the insulating isolation part is arranged at the bottom of the movable upper electrode assembly and is opposite to the central area of the wafer;
an upper electrode ring surrounding the outer side of the insulating isolation part, wherein the upper electrode ring is arranged opposite to the wafer edge area;
the lower electrode assembly includes:
the lower electrode ring is arranged around the wafer edge area, and the lower electrode ring and the upper electrode ring are arranged oppositely.
4. A plasma processing apparatus according to claim 1 or 3, wherein,
the gas channel is an edge gas channel or a central gas channel, the edge gas channel includes an edge shower port to inject a first gas over an edge region of the wafer, and the central gas channel includes a central shower port to inject a second gas over a central region of the wafer.
5. The plasma processing apparatus according to claim 4, wherein,
the first gas in the edge gas inlet channel comprises etching gas and/or cleaning gas containing F, cl;
the second gas within the central intake passage includes a purge gas and/or a buffer gas.
6. The plasma processing apparatus according to claim 4, wherein,
the edge gas inlet channel adopts a multi-path distribution structure in the movable upper electrode assembly, and comprises a plurality of edge spraying ports which are uniformly distributed along the edge area of the wafer so as to uniformly inject the first gas into the edge area of the wafer.
7. The plasma processing apparatus according to claim 1, wherein,
the inner surface of the gas channel is provided with a plating layer of corrosion resistant material.
8. The plasma processing apparatus according to claim 1, wherein,
the lifting devices, the gas channels and the sealing structures are all three, the lifting devices are uniformly distributed along the circumference of the movable upper electrode assembly, the gas channels respectively penetrate through the support columns of the lifting devices, and the sealing structures respectively surround the gas channels.
9. The plasma processing apparatus according to claim 1, wherein,
the support column is a ceramic hollow column;
and/or the driving device is a stepping motor or an air cylinder;
and/or, the sealing structure is a metal corrugated pipe;
and/or, the sealing structure comprises a corrugated pipe and a metal piece, one end of the corrugated pipe is connected with the bottom of the movable upper electrode assembly, the other end of the corrugated pipe is connected with the bottom of the vacuum reaction cavity, one end of the metal piece is connected with the bottom of the movable upper electrode assembly, and the other end of the metal piece is connected with the bottom of the vacuum reaction cavity.
10. The plasma processing apparatus according to claim 1, wherein,
the top of the vacuum reaction cavity is a cavity end cover which is made of transparent materials, and a plurality of optical processing devices are arranged above the vacuum reaction cavity to monitor the concentricity of the movable upper electrode assembly.
11. The plasma processing apparatus according to claim 1 or 10, wherein,
the top of the vacuum reaction cavity is a cavity end cover, and the cavity end cover is provided with a metal shielding net structure.
12. The plasma processing apparatus according to claim 1, wherein,
the distance between the edge side of the movable upper electrode assembly and the side wall of the vacuum reaction chamber is less than 1cm.
13. A method of plasma processing, comprising:
providing a plasma processing apparatus according to any one of claims 1 to 12;
injecting process gas into the vacuum reaction chamber through the gas channel;
the movable upper electrode assembly is lifted and lowered by driving the supporting columns through the driving device so as to generate a plasma environment between the movable upper electrode assembly and the movable lower electrode assembly to etch the edge area of the wafer.
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| CN114203506A (en) | 2022-03-18 |
| TWI817174B (en) | 2023-10-01 |
| TW202213504A (en) | 2022-04-01 |
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