CN114203506A - Plasma processing device and method thereof - Google Patents
Plasma processing device and method thereof Download PDFInfo
- Publication number
- CN114203506A CN114203506A CN202010987374.2A CN202010987374A CN114203506A CN 114203506 A CN114203506 A CN 114203506A CN 202010987374 A CN202010987374 A CN 202010987374A CN 114203506 A CN114203506 A CN 114203506A
- Authority
- CN
- China
- Prior art keywords
- electrode assembly
- upper electrode
- movable upper
- gas
- vacuum reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012545 processing Methods 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000006243 chemical reaction Methods 0.000 claims abstract description 81
- 238000007789 sealing Methods 0.000 claims abstract description 41
- 230000008569 process Effects 0.000 claims abstract description 34
- 238000005530 etching Methods 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 239000012780 transparent material Substances 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims 3
- 230000000694 effects Effects 0.000 abstract description 7
- 239000007789 gas Substances 0.000 description 80
- 235000012431 wafers Nutrition 0.000 description 70
- 238000012546 transfer Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Abstract
The invention discloses a plasma processing device and a method thereof, wherein the device comprises: a vacuum reaction chamber having a lower electrode assembly and a movable upper electrode assembly therein; the lifting devices are connected with the movable upper electrode assembly to lift the movable upper electrode assembly, each lifting device comprises a supporting column and a driving device, and the driving device is used for driving the supporting columns to lift the movable upper electrode assembly; the gas channels respectively extend from the outside of the vacuum reaction cavity to the bottom of the vacuum reaction cavity, the inside of the supporting column and the movable upper electrode assembly so as to inject process gas into the vacuum reaction cavity; and the plurality of conductive telescopic sealing structures are respectively arranged in the supporting columns and surround the gas channel. The advantages are that: the lifting device, the gas channel and the sealing structure are combined, the movable upper electrode assembly cannot be influenced even if the top of the vacuum reaction cavity is opened and closed for many times, the concentricity between the movable upper electrode assembly and the wafer and between the movable upper electrode assembly and the lower electrode assembly can be maintained more easily, and the process effect of bevel edge etching is guaranteed.
Description
Technical Field
The invention relates to the field of semiconductor equipment, in particular to a plasma processing device and a plasma processing method.
Background
During wafer processing, wafers or films deposited on wafers are often etched by plasma gases. In the whole process, the centering performance of the upper electrode assembly of the plasma processing device and the wafer has great influence on the etching effect of the wafer.
Most of the existing plasma processing apparatuses are designed with a movable upper electrode assembly, which is widely applied to the field of wafer etching, especially wafer edge etching (wafer etching). When the wafer is transferred into and out of the vacuum reaction chamber, the upper electrode assembly is lifted; when the wafer is processed, the upper electrode assembly is lowered and a slight gap is left between the upper electrode assembly and the wafer. Therefore, when the upper electrode assembly is lowered to the vicinity of the wafer, the upper electrode assembly needs to maintain extremely high concentricity with the wafer and the lower electrode assembly, so that the part of the edge of the wafer exposed in the plasma is symmetrical in the circumferential direction, and uniform etching can be obtained, thereby ensuring the bevel edge etching (bevel edge) effect.
In the plasma processing device, the upper electrode assembly is usually connected with a cavity end cover of the vacuum reaction cavity, the cavity end cover needs to be opened frequently to adjust the structure in the cavity during daily operation and maintenance, and the cavity end cover needs to be centered and adjusted again and linked with the upper electrode assembly after being turned over for each time, so that the upper electrode assembly and the wafer keep high concentricity, but the working time of the plasma processing device can be influenced if the upper electrode assembly spends a long time. In addition, the upper electrode assembly connected with the cavity end cover after the cavity end cover is turned over for many times may deviate, and even after the cavity end cover is centered and adjusted, the etching area at the edge of the wafer may deviate, so that the etching effect is affected.
Disclosure of Invention
The invention aims to provide a plasma processing device and a method thereof, wherein the plasma processing device realizes the support and lifting of a movable upper electrode component through a lifting device, so that a gas channel of the movable upper electrode component transmits process gas to a vacuum reaction cavity through a support column of the lifting device, a sealing structure is arranged to ensure the gas environment of the vacuum reaction cavity, and the movable upper electrode component is not connected with the top of the vacuum reaction cavity, so that the concentricity among the movable upper electrode component, a wafer and a lower electrode component is easier to keep in the using process of the device, the process effect of bevel edge etching is ensured, the energy and time loss of workers is reduced, and the development of a wafer etching process is facilitated.
In order to achieve the purpose, the invention is realized by the following technical scheme:
a plasma processing apparatus, comprising:
the vacuum reaction cavity is internally provided with a lower electrode assembly and a movable upper electrode assembly, and the lower electrode assembly is provided with a bearing surface for bearing a wafer to be processed;
the lifting devices are connected with the movable upper electrode assembly to lift the movable upper electrode assembly, each lifting device comprises a supporting column and a driving device, one end of each supporting column is connected with the movable upper electrode assembly, the other end of each supporting column is connected with the driving device, and the driving device is used for driving the supporting columns to lift the movable upper electrode assembly;
a plurality of gas channels respectively extending from the outside of the vacuum reaction chamber to the bottom of the vacuum reaction chamber, the inside of the support column and the movable upper electrode assembly, wherein the gas channels are used for injecting process gas into the vacuum reaction chamber;
the plurality of conductive telescopic sealing structures are respectively arranged in the supporting columns, the sealing structures are arranged around the gas channel, one end of each sealing structure is connected with the bottom of the movable upper electrode assembly, and the other end of each sealing structure is connected with the bottom of the vacuum reaction cavity.
Optionally, the bottom of the vacuum reaction chamber is provided with a plurality of groove structures, the driving device drives the supporting column to ascend and descend so as to drive the movable upper electrode assembly to ascend and descend, and the bottom of the supporting column is located in the groove structures when the movable upper electrode assembly is at a low position, so that the centers of the movable upper electrode assembly and the wafer are aligned.
Optionally, the movable upper electrode assembly includes:
the insulating isolation part is arranged at the bottom of the movable upper electrode assembly and is opposite to the central area of the wafer;
the upper electrode ring is arranged around the outer side of the insulating isolation part and is opposite to the edge area of the wafer;
the lower electrode assembly includes:
and the lower electrode ring is arranged in the edge area of the wafer in a surrounding manner, and the lower electrode ring and the upper electrode ring are oppositely arranged.
Optionally, the gas channel is an edge gas channel or a central gas channel, the edge gas channel includes an edge shower opening for injecting the first gas above the edge region of the wafer, and the central gas channel includes a central shower opening for injecting the second gas above the central region of the wafer.
Optionally, the first gas in the edge gas inlet channel comprises an etching gas containing F, Cl and/or a cleaning gas;
the second gas in the central inlet passage comprises a cleaning gas and/or a buffer gas.
Optionally, the edge gas inlet channel adopts a multi-path distribution structure in the movable upper electrode assembly, and includes a plurality of edge shower openings, and the edge shower openings are uniformly distributed along the edge area of the wafer, so as to uniformly inject the first gas into the edge area of the wafer.
Optionally, the inner surface of the gas channel is provided with a coating of a corrosion resistant material.
Optionally, the number of the lifting devices, the number of the gas channels and the number of the sealing structures are three, each of the lifting devices is uniformly distributed along the circumferential direction of the movable upper electrode assembly, each of the gas channels penetrates through the inside of the supporting column of each of the lifting devices, and each of the sealing structures surrounds each of the gas channels.
Optionally, the supporting column is a ceramic hollow column;
and/or the driving device is a stepping motor or an air cylinder;
and/or the sealing structure is a metal corrugated pipe;
and/or the sealing structure comprises a corrugated pipe and a metal piece, one end of the corrugated pipe is connected with the bottom of the movable upper electrode assembly, the other end of the corrugated pipe is connected with the bottom of the vacuum reaction cavity, one end of the metal piece is connected with the bottom of the movable upper electrode assembly, and the other end of the metal piece is connected with the bottom of the vacuum reaction cavity.
Optionally, the top of the vacuum reaction chamber is a chamber end cover, the chamber end cover is made of a transparent material, and the plurality of optical processing devices are disposed above the vacuum reaction chamber to monitor concentricity of the movable upper electrode assembly.
Optionally, the top of the vacuum reaction chamber is a chamber end cover, and the chamber end cover is provided with a metal shielding mesh structure.
Optionally, the distance between the edge side of the movable upper electrode assembly and the side wall of the vacuum reaction chamber is less than 1 cm.
Optionally, a plasma processing method includes:
providing the plasma processing apparatus;
injecting process gas into the vacuum reaction cavity through the gas channel;
and driving the support column to lift the movable upper electrode assembly by using a driving device so as to generate a plasma environment between the movable upper electrode assembly and the lower electrode assembly for etching the edge area of the wafer.
Compared with the prior art, the invention has the following advantages:
in the plasma processing device and the method thereof provided by the invention, the plasma processing device realizes the support and lifting of the movable upper electrode component through the lifting device, so that the process gas is conveyed to the vacuum reaction cavity through the gas channel of the movable upper electrode component by the support column of the lifting device, and the sealing structure is arranged to ensure the gas environment of the vacuum reaction cavity.
Furthermore, the sealing structure is arranged inside the supporting column, so that the sealing structure is free from the interference of the plasma environment, and the ignition phenomenon is avoided.
Furthermore, the bottom of the vacuum reaction cavity is provided with a groove structure, and the concentricity among the movable upper electrode assembly, the wafer and the lower electrode assembly can be ensured only by clamping the support column into the groove structure when the movable upper electrode assembly is at a low position.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings used in the description will be briefly introduced, and it is obvious that the drawings in the following description are an embodiment of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts according to the drawings:
FIG. 1 is a plasma processing apparatus of the present invention;
fig. 2 is another plasma processing apparatus of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that, in this document, the terms "comprises," "comprising," "includes," "including," "has" or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrases "comprising … …" or "comprising … …" does not exclude the presence of additional elements in a process, method, article, or terminal that comprises the element.
It is to be noted that the drawings are in a very simplified form and employ non-precise ratios for the purpose of facilitating and distinctly facilitating the description of one embodiment of the present invention.
As shown in fig. 1, a plasma processing apparatus according to the present invention includes: the vacuum reaction chamber 100 is formed by enclosing a reaction chamber body 101 and a chamber body end cover 102, wherein a wafer transfer port (not shown) is formed on the reaction chamber body 101, and the wafer transfer port is used for realizing the transfer of a wafer W between the inside and the outside of the vacuum reaction chamber 100. The vacuum reaction chamber 100 includes a lower electrode assembly 110 disposed at a bottom of the vacuum reaction chamber 100, the lower electrode assembly 110 having a carrying surface, and a wafer W to be processed introduced into the vacuum reaction chamber 100 is placed on the carrying surface. The vacuum reaction chamber 100 further includes a movable upper electrode assembly 120 disposed opposite to the lower electrode assembly 110, and at least one rf power source 130 is applied to the lower electrode assembly 110 through a matching network to dissociate the process gas into plasma, so that a plasma environment is formed between the movable upper electrode assembly 120 and the edge region of the lower electrode assembly 110, the plasma environment contains a large amount of active particles such as electrons, ions, excited atoms, molecules, and radicals, and the active particles can react with the surface of the wafer W to be processed in various physical and/or chemical reactions, so that the shape of the edge of the wafer W to be processed is changed, thereby completing the edge processing of the wafer W to be processed.
In this embodiment, the plasma processing apparatus is suitable for the field of etching the edge of the wafer W. In the process of processing the wafer W into the designed pattern by plasma etching, some extra films, such as a polysilicon layer, a nitride layer, and a metal layer, may be deposited on the outer edge region of the wafer W and the outer edge region of the back surface of the wafer W, and the extra films may contaminate subsequent processes and equipment, so that the extra films need to be removed by a bevel edge etching process.
As shown in fig. 1, the plasma processing apparatus for processing the edge of a wafer in the present embodiment includes a plurality of lifting devices, each of which is connected to the movable upper electrode assembly 120 to lift and lower the movable upper electrode assembly 120.
Specifically, the lifting device includes a supporting column 140 and a driving device 170, one end of the supporting column 140 is connected to the movable upper electrode assembly 120, the other end of the supporting column 140 is connected to the driving device 170 through a transmission component, the transmission component transmits the driving force of the driving device 170, and the driving device 170 drives the transmission component to drive the supporting column 140 so as to lift the movable upper electrode assembly 120.
Optionally, the support column 140 is a hollow structure to accommodate the remaining components. In this embodiment, the supporting column 140 is a ceramic hollow column. The driving device 170 is disposed outside the vacuum reaction chamber 100, and a plurality of sealing members 141 (such as bellows) are disposed at the joints of the transfer assembly and each component to protect the gas environment in the vacuum reaction chamber 100. Alternatively, the driving device 170 is a stepping motor or an air cylinder, and of course, the type and structure of the driving structure are not limited to the above two types, and the driving structure may be another type or structure as long as it can drive the supporting column 140 to complete the lifting of the supporting column 140.
The movable upper electrode assembly 120 includes a plurality of gas channels 150 therein, each of the gas channels 150 extends from the outside of the vacuum reaction chamber 100 to the bottom of the vacuum reaction chamber 100, the inside of the supporting pillars 140, and the movable upper electrode assembly 120, and the gas channels 150 are used for injecting a plurality of process gases into the vacuum reaction chamber 100. Further, a plasma corrosion resistant coating is disposed on the inner surface of the gas channel 150 to protect the inner surface of the gas channel 150 from particle shedding and further contaminating the cavity environment of the vacuum reaction chamber 100. Optionally, the plasma corrosion resistant coating material is a teflon coating or an yttria film layer or an anodic aluminum oxide layer.
In addition, the plasma processing apparatus further comprises a plurality of conductive retractable sealing structures 160, each sealing structure 160 is respectively disposed in the supporting column 140, the sealing structure 160 is disposed around the gas channel 150, one end of the sealing structure 160 is connected to the bottom of the movable upper electrode assembly 120, and the other end of the sealing structure 160 is connected to the bottom of the vacuum reaction chamber 100 to protect the gas environment of the vacuum reaction chamber 100 and to achieve grounding of the movable upper electrode assembly 120. In this embodiment, the sealing structure 160 is a metal bellows, which has a simple structure and is convenient to install, and can better protect the gas environment in the vacuum reaction chamber 100 and achieve the grounding of the movable upper electrode assembly 120.
Of course, the composition and structure of the sealing structure 160 are not limited thereto as long as it can achieve the sealing of the vacuum reaction chamber 100 and the grounding of the movable upper electrode assembly 120. For example, in another embodiment, the sealing structure 160 comprises a bellows made of a common material, one end of the bellows is connected to the bottom of the movable upper electrode assembly 120, the other end of the bellows is connected to the bottom of the vacuum reaction chamber 100, and one end of the metal piece is connected to the bottom of the movable upper electrode assembly 120, and the other end of the metal piece is connected to the bottom of the vacuum reaction chamber 100.
In this embodiment, three lifting devices, three gas passages 150 and three sealing structures 160 are provided, each lifting device is uniformly distributed along the circumference of the movable upper electrode assembly 120, each gas passage 150 passes through the inside of the supporting column 140 of each lifting device, and each sealing structure 160 surrounds each gas passage 150.
In this embodiment, the supporting pillar 140 is connected to the driving device 170, the gas channel 150 passes through the supporting pillar 140, and the sealing structure 160 is disposed in the supporting pillar 140, the supporting pillar 140 can support the movable upper electrode assembly 120, and the sealing structure 160 is not exposed to the plasma environment, so as to prevent the plasma from corroding the sealing structure 160, and avoid the ignition phenomenon of the conductive sealing structure 160 under the influence of the plasma or the radio frequency. In addition, in this embodiment, there is no connection relationship between the movable upper electrode assembly 120 and the cavity end cap 102, and after the plasma processing apparatus is initially installed and adjusted, the movable upper electrode assembly 120 only moves up and down, and even if the cavity end cap 102 is turned over and switched many times, the movable upper electrode assembly 120 does not need to be re-centered, so that manpower and material resources are saved to a greater extent, and time loss is reduced. The non-connection between the cavity end cover 102 and the movable upper electrode assembly 120 avoids the problem of offset of the movable upper electrode assembly 120 caused by multiple times of turning on and off the cavity end cover 102, the concentricity between the movable upper electrode assembly 120 and the wafer W and between the movable upper electrode assembly 120 and the lower electrode assembly 110 is easier to maintain, the process effect of bevel edge etching is ensured, the energy and time loss of workers is reduced, and the development of the wafer W etching process is facilitated.
Further, the bottom of the vacuum reaction chamber 100 is provided with a plurality of groove structures 103, the driving device 170 drives the supporting column 140 to move up and down to drive the movable upper electrode assembly 120 to move up and down, and when the movable upper electrode assembly 120 is at a low position, the bottom of the supporting column 140 is located in the groove structures 103, so that the centers of the movable upper electrode assembly 120 and the wafer W are aligned. The positioning function of the groove structure 103 facilitates the center alignment of the movable upper electrode assembly 120 and the wafer W, and the concentricity between the movable upper electrode assembly 120 and the wafer W and between the movable upper electrode assembly 120 and the lower electrode assembly 110 can be ensured only by clamping the support column 140 into the groove structure 103 at a low position in the vertical displacement process of the movable upper electrode assembly 120, and the structure is simple and the operation is convenient. In addition, the space in the vacuum reaction chamber 100 is limited, and the groove structure 103 does not need to additionally install a centering tool in the vacuum reaction chamber 100, so that the space structure of the vacuum reaction chamber 100 is greatly saved, and the utilization rate of the space structure is increased.
In this embodiment, the movable upper electrode assembly 120 includes: an insulating spacer 121 and an upper electrode ring 122. The insulating isolation portion 121 is disposed at the bottom of the movable upper electrode assembly 120 and is disposed opposite to the central region of the wafer W, and the insulating isolation portion 121 may have a layer structure or a bulk structure. The upper electrode ring 122 is disposed around the insulating isolation portion 121, and the upper electrode ring 122 is disposed opposite to the edge region of the wafer W. The lower electrode assembly 110 includes a base and a lower electrode ring 111, the upper surface of the base is a dielectric layer formed by anodic oxidation, a plurality of lifting pins for conveying the wafer W are arranged in the base, the lower electrode ring 111 is arranged on the base (in an embodiment, the base has a table portion, the lower electrode ring 111 is arranged on the table portion), the base and the lower electrode ring 111 are in radio frequency conduction, the lower electrode ring 111 is arranged around the lower portion of the edge area of the wafer W (the lower electrode ring 111 can also be level with the wafer W), and the lower electrode ring 111 and the upper electrode ring 122 are arranged oppositely. In particular, graphite or other carbon-based materials may be used for the upper electrode ring 122 and the lower electrode ring 111. During the process, plasma is generated between the upper electrode ring 122 and the lower electrode ring 111 to etch the edge of the wafer W.
In addition, the plasma processing apparatus includes a water chiller assembly and a heater disposed around the lower electrode assembly 110 to achieve control of the edge temperature of the wafer W during processing. An insulating ring 112 is further disposed around the outer side of the lower electrode assembly 110, and the insulating ring 112 is used for isolating the rf current of the lower electrode assembly 110. A plasma confinement assembly 113 is further disposed between the reaction chamber body 101 and the lower electrode assembly 110, and the plasma is confinedThe bundle assembly 113 is provided with a plurality of hole structures or groove structures to ensure a gas conduction rate in the vacuum reaction chamber 100, thereby preventing plasma diffusion and effectively controlling a pump conduction phenomenon. The plasma confinement assembly 113 is typically a metal material with a dielectric coating, such as an anodized material or Y-containing material2O3Aluminum of the plating layer.
Further, in the present embodiment, the gas passage 150 in the movable upper electrode assembly 120 is an edge gas inlet passage 151 or a center gas inlet passage 152. The edge feed gas channel 151 employs a multi-path distribution structure within the movable upper electrode assembly 120 that includes a plurality of edge shower ports disposed in the upper electrode ring 122, each of which is uniformly distributed along an edge region of the wafer W (similar to a showerhead structure) so as to uniformly inject the first gas over the edge region of the wafer W. The central gas inlet channel 152 includes a plurality of central gas inlets located above the central region of the wafer W for injecting a second gas above the central region of the wafer W. Typically, in the edge etching process, the first gas introduced into the edge gas inlet 151 comprises F, Cl and O2Etc. cleaning gases and other auxiliary etching gases to perform the edge etching process. The second gas introduced into the central gas inlet channel 152 includes a buffer gas for maintaining a high pressure above the wafer W during edge processing of the wafer W to prevent etching of the central region of the wafer W from the plasma environment or a cleaning gas for cleaning the vacuum reaction chamber 100 when there is no wafer W in the vacuum reaction chamber 100.
In the bevel edge etching process, a first gas (e.g., Ar, CF)4、O2Etc.) enters the vacuum reaction chamber 100 through the edge gas inlet channel 151 above the edge region of the wafer W, and forms plasma under the excitation of radio frequency. The plasma reacts chemically with the excess film accumulated on the edge of the wafer W by the action of the electric field (capacitive coupling) between the movable upper electrode assembly 120 and the lower electrode assembly 110, thereby removing the excess film generated in other processes. Andmeanwhile, the second gas is introduced into the vacuum chamber 100 through the central gas inlet channel 152 above the central region of the wafer W, i.e., below the insulating isolation portion 121 of the movable upper electrode assembly 120, and the flow rate or pressure of the second gas can be adjusted to protect the central region of the wafer W from the plasma environment.
During the process, a first gas and a second gas are respectively introduced into the vacuum reaction chamber 100 through the edge gas inlet channel 151 and the central gas inlet channel 152, and when a certain gas and pressure (typically between several hundreds of mT to several T) are maintained in the vacuum reaction chamber 100, rf energy is input to the lower electrode assembly 110 from the rf power source 130, and plasma is formed through capacitive coupling between the lower electrode ring 111 and the upper electrode ring 122.
In addition, in this embodiment, a metal shielding mesh structure 104 is disposed on the top of the chamber end cap 102 to shield the electric field inside the vacuum reaction chamber 100. Optionally, the chamber end cap 102 at the top of the vacuum reaction chamber 100 is made of the same material as the reaction chamber 101, so as to facilitate the processing and assembling of the plasma processing apparatus. Of course, the material of the cavity end cap 102 is not limited thereto, and may be other dielectric materials. In another embodiment, the chamber cover 102 is made of a transparent material, and a plurality of optical processing devices are disposed above the vacuum reaction chamber 100, i.e., above the chamber cover 102, to monitor the concentricity between the movable upper electrode assembly 120 and the wafer W.
In another embodiment, the distance between the side edge of the movable upper electrode assembly 120 and the sidewall of the vacuum chamber 100 is very small (see fig. 2), for example, less than 1cm, which ensures that no friction occurs during the up and down movement of the movable upper electrode assembly 120, and the plasma generated during the process is confined between the movable upper electrode assembly 120 and the lower electrode assembly 110 and does not diffuse into the space between the movable upper electrode assembly 120 and the chamber end cap 102, without the need of additionally providing the metal shielding mesh structure 104.
The invention also provides a plasma processing method of the plasma processing device, which specifically comprises the following steps: injecting a process gas into the vacuum reaction chamber 100 through the gas passage 150; the support column 140 is driven by a driving device 170 to move the movable upper electrode assembly 120 up and down, so as to generate a plasma environment between the movable upper electrode assembly 120 and the lower electrode assembly 110 for etching the edge region of the wafer W.
In summary, the present invention provides a plasma processing apparatus and a method thereof, wherein the plasma processing apparatus supports and lifts the movable upper electrode assembly 120 by the supporting column 140 of the lifting device and the driving device 170, so that the gas channel 150 of the movable upper electrode assembly 120 delivers the process gas to the vacuum reaction chamber 100 through the supporting column 140, and a sealing structure 160 is provided to ensure a gas atmosphere of the vacuum reaction chamber 100, the movable upper electrode assembly 120 is not connected to the top of the vacuum reaction chamber 100, the position of the movable upper electrode assembly 120 is not affected by the multiple opening and closing of the top of the vacuum reaction chamber 100, the concentricity between the movable upper electrode assembly 120 and the wafer W and the lower electrode assembly 110 can be maintained more easily during the use of the device, the process effect of bevel edge etching is ensured, the energy and time loss of workers is reduced, and the development of the wafer W etching process is facilitated.
Further, the sealing structure 160 is disposed inside the supporting column 140, so that the sealing structure 160 is protected from the interference of the plasma environment, and the ignition phenomenon is avoided.
Further, the bottom of the vacuum reaction chamber 100 is provided with a groove structure 103, and the concentricity between the movable upper electrode assembly 120, the wafer W and the lower electrode assembly 110 can be ensured only by clamping the support column 140 into the groove structure 103 when the movable upper electrode assembly 120 is at a low position.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (13)
1. A plasma processing apparatus, comprising:
the vacuum reaction cavity is internally provided with a lower electrode assembly and a movable upper electrode assembly, and the lower electrode assembly is provided with a bearing surface for bearing a wafer to be processed;
the lifting devices are connected with the movable upper electrode assembly to lift the movable upper electrode assembly, each lifting device comprises a supporting column and a driving device, one end of each supporting column is connected with the movable upper electrode assembly, the other end of each supporting column is connected with the driving device, and the driving device is used for driving the supporting columns to lift the movable upper electrode assembly;
a plurality of gas channels respectively extending from the outside of the vacuum reaction chamber to the bottom of the vacuum reaction chamber, the inside of the support column and the movable upper electrode assembly, wherein the gas channels are used for injecting process gas into the vacuum reaction chamber;
the plurality of conductive telescopic sealing structures are respectively arranged in the supporting columns, the sealing structures are arranged around the gas channel, one end of each sealing structure is connected with the bottom of the movable upper electrode assembly, and the other end of each sealing structure is connected with the bottom of the vacuum reaction cavity.
2. The plasma processing apparatus according to claim 1,
the bottom of the vacuum reaction cavity is provided with a plurality of groove structures, the driving device drives the supporting column to lift so as to drive the movable upper electrode assembly to lift, and the bottom of the supporting column is positioned in the groove structures when the movable upper electrode assembly is at a low position, so that the centers of the movable upper electrode assembly and the wafer are aligned.
3. The plasma processing apparatus according to claim 1,
the movable upper electrode assembly includes:
the insulating isolation part is arranged at the bottom of the movable upper electrode assembly and is opposite to the central area of the wafer;
the upper electrode ring is arranged around the outer side of the insulating isolation part and is opposite to the edge area of the wafer;
the lower electrode assembly includes:
and the lower electrode ring is arranged in the edge area of the wafer in a surrounding manner, and the lower electrode ring and the upper electrode ring are oppositely arranged.
4. The plasma processing apparatus according to claim 1 or 3,
the gas channel is an edge gas inlet channel or a central gas inlet channel, the edge gas inlet channel comprises an edge spray opening for injecting a first gas above the edge area of the wafer, and the central gas inlet channel comprises a central spray opening for injecting a second gas above the central area of the wafer.
5. The plasma processing apparatus according to claim 4,
the first gas in the edge gas inlet channel comprises F, Cl-containing etching gas and/or cleaning gas;
the second gas in the central inlet passage comprises a cleaning gas and/or a buffer gas.
6. The plasma processing apparatus according to claim 4,
the edge inlet channel adopts a multi-path distribution structure in the movable upper electrode assembly and comprises a plurality of edge spray openings which are uniformly distributed along the edge area of the wafer so as to uniformly inject the first gas into the edge area of the wafer.
7. The plasma processing apparatus according to claim 1,
the inner surface of the gas channel is provided with a coating of a corrosion resistant material.
8. The plasma processing apparatus according to claim 1,
the lifting devices, the gas channels and the sealing structures are three, the lifting devices are uniformly distributed along the circumferential direction of the movable upper electrode assembly, the gas channels penetrate through the supporting columns of the lifting devices respectively, and the sealing structures surround the gas channels respectively.
9. The plasma processing apparatus according to claim 1,
the support column is a ceramic hollow column;
and/or the driving device is a stepping motor or an air cylinder;
and/or the sealing structure is a metal corrugated pipe;
and/or the sealing structure comprises a corrugated pipe and a metal piece, one end of the corrugated pipe is connected with the bottom of the movable upper electrode assembly, the other end of the corrugated pipe is connected with the bottom of the vacuum reaction cavity, one end of the metal piece is connected with the bottom of the movable upper electrode assembly, and the other end of the metal piece is connected with the bottom of the vacuum reaction cavity.
10. The plasma processing apparatus according to claim 1,
the top of the vacuum reaction cavity is a cavity end cover which is made of transparent materials, and a plurality of optical processing devices are arranged above the vacuum reaction cavity to monitor the concentricity of the movable upper electrode assembly.
11. The plasma processing apparatus according to claim 1 or 10,
the top of the vacuum reaction cavity is provided with a cavity end cover, and the cavity end cover is provided with a metal shielding net structure.
12. The plasma processing apparatus according to claim 1,
the distance between the edge side of the movable upper electrode assembly and the side wall of the vacuum reaction chamber is less than 1 cm.
13. A method of plasma processing, comprising:
providing a plasma processing apparatus as claimed in any one of claims 1 to 12;
injecting process gas into the vacuum reaction cavity through the gas channel;
and driving the support column to lift the movable upper electrode assembly by using a driving device so as to generate a plasma environment between the movable upper electrode assembly and the lower electrode assembly for etching the edge area of the wafer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010987374.2A CN114203506B (en) | 2020-09-18 | 2020-09-18 | Plasma processing device and method thereof |
| TW110129054A TWI817174B (en) | 2020-09-18 | 2021-08-06 | Plasma treatment device and plasma treatment method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010987374.2A CN114203506B (en) | 2020-09-18 | 2020-09-18 | Plasma processing device and method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114203506A true CN114203506A (en) | 2022-03-18 |
| CN114203506B CN114203506B (en) | 2024-03-12 |
Family
ID=80645033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010987374.2A Active CN114203506B (en) | 2020-09-18 | 2020-09-18 | Plasma processing device and method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN114203506B (en) |
| TW (1) | TWI817174B (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02294019A (en) * | 1989-05-08 | 1990-12-05 | Fuji Electric Co Ltd | Plasma cvd device |
| JPH1126190A (en) * | 1997-07-04 | 1999-01-29 | Hitachi Ltd | Plasma processing device |
| JPH1154496A (en) * | 1997-08-07 | 1999-02-26 | Tokyo Electron Ltd | Heat treatment system and gas processing system |
| JPH11162957A (en) * | 1997-11-28 | 1999-06-18 | Nec Corp | Plasma cvd equipment and its dry cleaning |
| US20090200269A1 (en) * | 2008-02-08 | 2009-08-13 | Lam Research Corporation | Protective coating for a plasma processing chamber part and a method of use |
| JP2009267048A (en) * | 2008-04-24 | 2009-11-12 | Sharp Corp | Plasma processing apparatus and plasma processing method using same |
| CN101853777A (en) * | 2009-03-31 | 2010-10-06 | 东京毅力科创株式会社 | Gas flow path structure and substrate processing apparatus |
| CN101906621A (en) * | 2007-05-03 | 2010-12-08 | 应用材料股份有限公司 | The asymmetric ground connection of rectangular susceptor |
| CN102142357A (en) * | 2009-12-03 | 2011-08-03 | 东京毅力科创株式会社 | Plasma processing apparatus |
| CN103866282A (en) * | 2012-12-14 | 2014-06-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | PECVD apparatus |
| CN111627843A (en) * | 2020-07-01 | 2020-09-04 | 上海邦芯半导体设备有限公司 | Novel edge etching reaction device and edge etching method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7156787B2 (en) * | 2003-12-23 | 2007-01-02 | Nike, Inc. | Inflatable structure and method of manufacture |
| KR100532354B1 (en) * | 2004-05-31 | 2005-11-30 | 삼성전자주식회사 | Apparatus for controling etching area and apparatus and method for etching edge of wafer |
| JP5606063B2 (en) * | 2009-12-28 | 2014-10-15 | 東京エレクトロン株式会社 | Plasma processing equipment |
| US9171702B2 (en) * | 2010-06-30 | 2015-10-27 | Lam Research Corporation | Consumable isolation ring for movable substrate support assembly of a plasma processing chamber |
-
2020
- 2020-09-18 CN CN202010987374.2A patent/CN114203506B/en active Active
-
2021
- 2021-08-06 TW TW110129054A patent/TWI817174B/en active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02294019A (en) * | 1989-05-08 | 1990-12-05 | Fuji Electric Co Ltd | Plasma cvd device |
| JPH1126190A (en) * | 1997-07-04 | 1999-01-29 | Hitachi Ltd | Plasma processing device |
| JPH1154496A (en) * | 1997-08-07 | 1999-02-26 | Tokyo Electron Ltd | Heat treatment system and gas processing system |
| JPH11162957A (en) * | 1997-11-28 | 1999-06-18 | Nec Corp | Plasma cvd equipment and its dry cleaning |
| CN101906621A (en) * | 2007-05-03 | 2010-12-08 | 应用材料股份有限公司 | The asymmetric ground connection of rectangular susceptor |
| US20090200269A1 (en) * | 2008-02-08 | 2009-08-13 | Lam Research Corporation | Protective coating for a plasma processing chamber part and a method of use |
| JP2009267048A (en) * | 2008-04-24 | 2009-11-12 | Sharp Corp | Plasma processing apparatus and plasma processing method using same |
| CN101853777A (en) * | 2009-03-31 | 2010-10-06 | 东京毅力科创株式会社 | Gas flow path structure and substrate processing apparatus |
| CN102142357A (en) * | 2009-12-03 | 2011-08-03 | 东京毅力科创株式会社 | Plasma processing apparatus |
| CN103866282A (en) * | 2012-12-14 | 2014-06-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | PECVD apparatus |
| CN111627843A (en) * | 2020-07-01 | 2020-09-04 | 上海邦芯半导体设备有限公司 | Novel edge etching reaction device and edge etching method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202213504A (en) | 2022-04-01 |
| TWI817174B (en) | 2023-10-01 |
| CN114203506B (en) | 2024-03-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11728139B2 (en) | Process chamber for cyclic and selective material removal and etching | |
| KR102073941B1 (en) | Showerhead having a detachable gas distribution plate | |
| JP5361189B2 (en) | Method and apparatus for improved baffle plate | |
| US8864936B2 (en) | Apparatus and method for processing substrate | |
| JP2018125519A (en) | Adjustable expansion electrode for edge uniformity control | |
| EP0693769A2 (en) | Plasma reactor with enhanced plasma uniformity by gas addition, reduced chamber diameter and reduced RF wafer pedestal diameter | |
| EP0566220B1 (en) | Magnetic field enhanced plasma etch reactor | |
| KR20130111221A (en) | Confined process volume pecvd chamber | |
| CN1516887A (en) | Hollow anode plasma reactor and method | |
| JP2000058518A (en) | Substrate treating device | |
| KR100823302B1 (en) | Plasma processing apparatus | |
| CN112366128B (en) | Flow module for providing symmetrical flow paths in a process chamber | |
| CN112136202B (en) | Apparatus for suppressing parasitic plasma in a plasma enhanced chemical vapor deposition chamber | |
| US8181597B2 (en) | Plasma generating apparatus having antenna with impedance controller | |
| KR20080053167A (en) | Plasma processing apparatus | |
| WO2020185395A1 (en) | Electrostatic chuck for high bias radio frequency (rf) power application in a plasma processing chamber | |
| KR20020095324A (en) | semiconductor device fabricating equipment using radio frequency energy | |
| TWI576910B (en) | Semiconductor processing system with source for decoupled ion and radical control | |
| US20100230050A1 (en) | Plasma generating apparatus | |
| CN114203506A (en) | Plasma processing device and method thereof | |
| US20110005683A1 (en) | Plasma generating apparatus | |
| CN111326391B (en) | Plasma processing apparatus | |
| TW202145290A (en) | Isolation ring assembly, plasma processing device and processing method capable of thoroughly cleaning the gap between the isolation ring and the electrode | |
| CN114664622A (en) | Plasma processing device and adjusting method | |
| KR100323598B1 (en) | Plasma etching method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |