KR20040067977A - Induction coupling type plasma processing apparatus - Google Patents

Abstract

PURPOSE: An inductively coupled plasma treating device is provided to obtain plasma uniformity without deteriorating plasma density while partially comprising a conductive member between an RF antenna and plasma formed within a treating chamber, and to execute a uniform plasma treatment. CONSTITUTION: An RF antenna(13) for forming an inductive electric field within a treating chamber is installed in a part corresponding to a dielectric wall(2) configuring an upper wall of the treating chamber. A conductive member(11) is installed between the RF antenna(13) and plasma formed within the treating chamber. The RF antenna(13) is installed so as to cross the conductive member(11) in plural crossing portions(13b). A position of the RF antenna(13) in more than one crossing portion(13b) is higher than other position except the plural crossing portions(13b).

Description

Inductively Coupled Plasma Treatment Equipment {INDUCTION COUPLING TYPE PLASMA PROCESSING APPARATUS}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inductively coupled plasma processing apparatus for performing a plasma treatment such as dry etching with an inductively coupled plasma to a substrate to be treated, such as a liquid crystal display (LCD) substrate.

In an LCD manufacturing process, plasma processing, such as etching, sputtering, and CVD (chemical vapor deposition), is used variously about the LCD glass substrate which is a to-be-processed substrate.

Various kinds of plasma processing apparatuses for performing such plasma processing are used. Among them, inductively coupled plasma (ICP) processing apparatuses are known as those capable of generating high density plasma.

As the inductively coupled plasma processing apparatus, a ceiling of a processing chamber for performing plasma processing that can be maintained in vacuum is formed of a dielectric wall, and a high frequency (RF) antenna is disposed thereon. When the high frequency power is supplied to the high frequency antenna, an induction electric field is formed in the processing chamber, and the processing gas introduced into the processing chamber is converted into plasma by the induction electric field, and plasma such as etching is performed by the plasma of the processing gas thus formed. Processing is carried out.

By the way, in recent years, LCD glass substrates have become remarkably large for the purpose of processing efficiency, etc., and the huge thing which one side exceeds 1m appears. For this reason, the inductively coupled plasma processing apparatus for processing an LCD glass substrate is also enlarged, and the dielectric wall is also enlarged. If the dielectric material is enlarged, the thickness thereof must be thickened so as to have sufficient strength to withstand the pressure difference and the weight of the inside and outside of the processing chamber.

In contrast, Patent Document 1 (Japanese Patent Laid-Open No. 2001-28299) discloses that a metal shower housing constituting a shower head has a function of a support beam, and the dielectric beam is supported by the support beam. This prevents warping of the dielectric wall, thereby making the dielectric wall thinner to improve energy efficiency, and allowing the shower housing and the high frequency antenna to be orthogonal to prevent the induction field from the high frequency antenna to be disturbed by the support beam to a considerable extent. It is disclosed to prevent the decrease in efficiency.

However, as in the technique of Patent Document 1, if there is a metal member such as a shower housing, that is, a conductive member, between the high frequency antenna and the plasma in the processing chamber, the capacitance is between them at the intersection of the high frequency antenna and the conductive member. Coupling occurs, and a current flows through the conductive member due to the capacitive coupling, the current and the plasma are inductively coupled, and the plasma intensity immediately below the conductive member increases, so that the desired plasma uniformity cannot be obtained, resulting in uneven treatment. .

In order to avoid such a problem, if the high frequency antenna is away from the conductive member, desired plasma uniformity is obtained, and uniformity of processing is secured, but the distance between the antenna and the plasma is increased, resulting in a decrease in plasma density.

The present invention was made in view of the above circumstances, and it is possible to obtain a desired plasma uniformity without lowering the plasma density while having a conductive member partially between the high frequency antenna and the plasma formed in the processing chamber. An object of the present invention is to provide an inductively coupled plasma processing apparatus capable of performing plasma processing.

1 is a cross-sectional view showing an inductively coupled plasma etching apparatus according to an embodiment of the present invention,

2 is a bottom view showing a state in which a cover member of a dielectric wall used in the apparatus of FIG. 1 is removed;

3 is a plan view showing a high frequency antenna and a dielectric wall of the device of FIG.

4 is an enlarged cross-sectional view of an intersection of a high frequency antenna and a shower head in the apparatus of FIG. 1;

5 is a view for explaining an induced current by a conventional high frequency antenna,

Fig. 6 is a diagram showing another example of the bridge shape at the intersection of the high frequency antenna and the shower head.

Explanation of symbols for the main parts of the drawings

1 body container 2 dielectric wall

4: process chamber 11: shower head (conductive member)

13: high frequency antenna 13a: antenna piece

13b: intersection 20: process gas supply system

22: susceptor 30: exhaust mechanism

G: LCD board

MEANS TO SOLVE THE PROBLEM In order to solve the said subject, this invention is the inductively coupled plasma processing apparatus which plasma-processes a process gas by an induction electric field, and performs a plasma processing to a to-be-processed substrate, The process chamber which performs a plasma process to a to-be-processed substrate, and A high frequency electric power provided outside the processing chamber via a processing gas supply system for supplying a processing gas into the processing chamber, an exhaust system exhausting the processing chamber, a dielectric wall constituting a part of the wall portion of the processing chamber, and the dielectric wall; Supplied with a high frequency antenna for forming an induction field in the processing chamber, and a conductive member provided between the high frequency antenna and the plasma formed in the processing chamber, wherein the high frequency antenna has a plurality of intersections with the conductive member. Is installed to intersect at the portion, and also with the high frequency antenna at the intersection portion. An inductively coupled plasma processing apparatus is provided, wherein a distance between the dielectric walls is larger than a shortest distance between the high frequency antenna and the dielectric walls other than the plurality of intersections.

Moreover, this invention is the inductively coupled plasma processing apparatus which plasma-processes a process gas by an induction electric field, and performs a plasma process to a to-be-processed substrate, Comprising: The process chamber which performs a plasma process to a to-be-processed substrate, and a process gas in the said process chamber. A processing gas supply system for supplying a gas, an exhaust system for exhausting the inside of the processing chamber, a dielectric wall constituting an upper wall of the processing chamber, and a dielectric wall outside the processing chamber, and high frequency power is supplied to the processing chamber. And a high frequency antenna for forming an induction field, and a conductive member partially provided between the high frequency antenna and the substrate to be processed in the processing chamber, wherein the high frequency antenna is provided so as to intersect the conductive member at a plurality of intersections. And the position of the high frequency antenna at one or more of the intersections is Of all positions in the non-cross-section to provide an inductively coupled plasma processing apparatus, characterized in that high.

According to the present invention, in the structure in which a high frequency antenna is provided in a part of the wall portion of the processing chamber, particularly a portion corresponding to the dielectric wall constituting the upper wall, and a conductive member is provided between the high frequency antenna and the plasma formed in the processing chamber. And a high frequency antenna intersecting the conductive member at a plurality of intersections, and a distance between the high frequency antenna and the dielectric wall at the intersection is equal to that of the high frequency antenna and the dielectric wall at other than the plurality of intersections. Since it is made larger than the shortest distance and the capacitive coupling of the part becomes very small, the plasma of the position just under the intersection can be avoided. Therefore, the desired plasma uniformity can be ensured without lowering the plasma density, so that uniform plasma processing can be performed.

An intersection of at least a part of the high frequency antennas may be provided so as to cover an existing portion of the conductive member. As a result, the separation distance from the dielectric wall can be easily increased. Moreover, it is preferable that the said high frequency antenna is provided so that it may orthogonally cross the said electroconductive member. As a result, inductive coupling between the high frequency antenna and the conductive member can be prevented to a considerable extent, and the induction field from the high frequency antenna is prevented from being disturbed by the conductive member.

In the case where the dielectric wall constitutes the upper wall of the processing chamber, it is possible to apply a support member for supporting the dielectric wall as the conductive member. In this case, the dielectric wall can be configured by combining a plurality of divided pieces on the support member.

Similarly, when the dielectric wall constitutes the upper wall of the processing chamber, as the conductive member, it is possible to apply a shower head for discharging the processing gas provided on the dielectric wall. In this case, the shower head can be configured to have a supporting function of the dielectric wall. In this way, when the shower head has a supporting function of the dielectric wall, the shower head has a cross shape, and the dielectric wall can be configured by combining a plurality of divided pieces on the shower head.

Embodiment of the invention

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described with reference to an accompanying drawing. 1 is a cross-sectional view showing an induction plasma etching apparatus according to an embodiment of the present invention. This apparatus is used to etch metal films, ITO films, oxide films and the like when forming thin film transistors on LCD glass substrates, for example, in the manufacture of LCDs.

This plasma processing apparatus has a square cylindrical hermetic body container 1 made of a conductive material, for example, aluminum whose inner wall surface is anodized. This main body container 1 is assembled so that it can be decomposed | disassembled, and is grounded by the ground wire 1a. The main body container 1 is partitioned into the antenna chamber 3 and the processing chamber 4 up and down by the dielectric wall 2. Thus, the dielectric wall 2 constitutes a ceiling wall (upper wall) of the processing chamber 4. The dielectric wall 2 is made of ceramics such as Al ₂ O ₃ , quartz, or the like.

The support shelf 5 which protrudes inward is provided between the side wall 3a of the antenna chamber 3 and the side wall 4a of the process chamber 4 in the main body container 1, and this support shelf 5 The dielectric wall 2 is mounted on it. Therefore, the support shelf 5 functions as a part of the wall part of the process chamber 4. The dielectric wall 2 and the support shelf 5 are fixed by the bis 6, and between the dielectric wall 2 and the support shelf 5, a resin sealing ring 7 (for example, a trade name Viton) ) Is intervened.

As shown in FIG. 2, a shower head 11 having a cross shape is built in the dielectric wall 2, and the entire lower surface of the dielectric wall 2 is covered with a dielectric cover 10. The shower head 11 forming a cross shape supports the dielectric wall 2 from below, and has a function as a supporting member. In addition, the dielectric wall 2 is composed of four divided pieces 2a, and the dielectric wall 2 is formed by assembling the divided pieces 2a on the shower head 11 forming a cross shape. The shower head 11 supporting the dielectric wall 2 is suspended from the ceiling of the main body container 1 by a plurality of lines of suspenders (not shown). 2 is a bottom view showing a state in which the dielectric cover 10 is removed.

The shower head 11 is made of a conductive material, preferably a metal such as aluminum whose inner surface is anodized so that no contaminants are generated. The shower head 11 is provided with a gas passage 12 extending horizontally, and the gas passage 12 extends downward and opens through a dielectric cover 10. 12a) is communicating. On the other hand, the gas supply pipe 20a is provided in the center of the upper surface of the dielectric wall 2 so that it may communicate with this gas flow path 12. The gas supply pipe 20a penetrates from the ceiling of the main body container 1 to the outside thereof and is connected to a processing gas supply system 20 including a processing gas supply source, a valve system, and the like. Therefore, in the plasma processing, the processing gas (halogen-containing gas, etc.) for etching supplied from the processing gas supply system 20 is supplied into the shower head 11 via the gas supply pipe 20a, and the gas supply at the lower surface thereof. It discharges into the process chamber 4 from the hole 12a.

In the antenna chamber 3, a radio frequency (RF) antenna 13 is disposed on the dielectric wall 2 so as to face the dielectric wall 2. As shown in FIG. 3, this high frequency antenna 13 has four antenna pieces 13a extending in a substantially square vortex in all directions from a power supply member 16 provided on the outer periphery of the gas supply pipe 20a. It has a planar quadruple antenna. The power supply member 16 is connected to the high frequency power supply 15 via a matching unit 14, while the outer end of each antenna piece 13a is grounded via the main body container 1. Moreover, the high frequency antenna 13 is arrange | positioned so that it may become substantially orthogonal to the extension direction of the shower head 11 of a cross shape.

Although the high frequency antenna 13 is provided so that the most part may contact the dielectric wall 2 as shown in FIG. 4, the crossing part 13b which cross | intersects the cross shower head 11 is the shower head 11 The bridge is configured to span the presence of). As a result, the distance from the dielectric wall 2 of the intersection portion 13b is larger than that of other portions of the antenna 13.

During the plasma process, the high frequency power source 15 is supplied with a high frequency power source for forming an induction field, for example, a frequency of 13.56 MHz, to the high frequency antenna 13. The induction electric field is formed in the processing chamber 4 by the high frequency antenna 13 supplied with the high frequency electric power in this way, and the processing gas supplied from the shower head 11 is converted into plasma by this induction electric field. The output of the high frequency power supply 15 at this time is suitably set so that it may become a value sufficient to generate a plasma.

Below the process chamber 4, a susceptor 22 as a mounting table for mounting the LCD glass substrate G is provided so as to face the high frequency antenna 13 with the dielectric wall 2 interposed therebetween. The susceptor 22 is made of a conductive material such as aluminum whose surface is anodized. The LCD glass substrate G mounted on the susceptor 22 is adsorbed and held by the susceptor 22 by an electrostatic chuck (not shown). In the state where the LCD glass substrate G is held at the predetermined position of the susceptor 22, the position of the cross point of the shower head 11 substantially coincides with the center of the substrate G. As shown in FIG.

The susceptor 22 is housed in the insulator frame 24 and is supported by the hollow post 25. The strut 25 penetrates the bottom portion of the main body container 1 while maintaining an airtight state, is supported by a lifting mechanism (not shown) disposed outside the main body container 1, and is lifted at the time of carrying in and out of the substrate G. The susceptor 22 is driven in the vertical direction by the mechanism. In addition, between the insulator frame 24 accommodating the susceptor 22 and the bottom portion of the main body container 1, a bellows 26 which surrounds the strut 25 in an airtight manner is disposed, thereby susceptor 22. The airtightness in the processing chamber 4 is also ensured by the vertical movement of Moreover, the carry-in / out port 27 which carries in and out of the board | substrate G is provided in the side wall 4a of the process chamber 4, This carry-in / out port 27 is openable and openable by the gate valve 27a.

The susceptor 22 is connected to the high frequency power supply 29 via the matching unit 28 by a feed rod provided in the hollow post 25. The high frequency power supply 29 applies the high frequency power for bias, for example, the high frequency power of 6 MHz to the susceptor 22 during a plasma process. By this high frequency power for bias, ions in the plasma generated in the processing chamber 4 are effectively introduced into the substrate G.

Moreover, in the susceptor 22, in order to control the temperature of the board | substrate G, the temperature control mechanism which consists of heating means, such as a ceramic heater, a refrigerant | coolant flow path, etc., and the temperature sensor are provided (all are not shown). . The piping and wiring to such a mechanism or member are all led out of the main body container 1 through the hollow support 25.

The processing chamber 4 is exhausted by the exhaust mechanism 30, to which the exhaust mechanism 30 including a vacuum pump and the like are connected to the bottom of the processing chamber 4 via an exhaust pipe 31. The inside of the processing chamber 4 is set and maintained in a predetermined vacuum atmosphere (for example, 1.33 kPa).

Next, the processing operation at the time of performing a plasma etching process with respect to LCD glass substrate G using the inductively coupled plasma etching apparatus comprised as mentioned above is demonstrated.

First, the board | substrate G is carried in into the process chamber 4 by the conveyance mechanism (not shown) from the loading exit 27 in the state which opened the gate valve 27a, and it mounts on the mounting surface of the susceptor 22. FIG. After that, the substrate G is fixed on the susceptor 22 by an electrostatic chuck (not shown). Next, the processing gas containing the etching gas from the processing gas supply system 20 in the processing chamber 4 is discharged from the gas discharge hole 12a of the shower head 11 into the processing chamber, and the exhaust mechanism 30 is discharged to the exhaust mechanism 30. By evacuating the inside of the processing chamber 4 via the exhaust pipe 31, the inside of the processing chamber is maintained in a pressure atmosphere of, for example, about 1.33 Pa.

Next, a high frequency of 13.56 MHz is applied to the high frequency antenna 13 from the high frequency power source 15, thereby forming a uniform induction field in the processing chamber 4 via the dielectric wall 2. As a result, the processing gas becomes plasma in the processing chamber 4 to generate a high density inductively coupled plasma. The ions in the plasma generated in this way are effectively introduced into the substrate G by, for example, 6 MHz high frequency power applied from the high frequency power supply 29 to the susceptor 22, and the etching treatment is performed on the substrate G. Is carried out.

In this case, as in the prior art, when the high frequency antenna 13 is in contact with the dielectric wall 2 as a whole, since they are close at the intersection with the shower head 11 of the high frequency antenna 13, There is thus a capacitive coupling between them. As shown in Fig. 5, the capacitive coupling causes a current to flow in the shower head 11, and the current and the plasma are inductively coupled to increase the plasma intensity at a position directly below the shower head 11, resulting in uneven plasma. As a result, it becomes difficult to carry out uniform processing.

On the other hand, in this embodiment, as shown in FIG. 4, in the high frequency antenna 13, the crossing part 13b which cross | intersects the shower head 11 bridge | crosses so that the presence part of the shower head 11 may be bridged. The distance from the dielectric wall 2 of the crossing part 13b is larger than the other part of the high frequency antenna 13 by this. Since the electric field strength due to capacitive coupling is inversely proportional to the square of the distance, by forming a bridge in such a manner as to increase the distance, the capacitive coupling between the intersection portion 13b and the shower head 11 can be made almost impossible. As a result, the plasma at the position immediately below the intersection 13b can be avoided. Therefore, the desired plasma uniformity can be ensured without lowering the plasma density, so that uniform plasma processing can be performed. In addition, when the high frequency antenna 13 and the shower head 11 serving as the conductive member are close to each other, an induction current flows through the shower head 11, thereby reducing the efficiency. By increasing the distance of, this induced current can be prevented. In this case, the separation distance of the high frequency antenna 13 and the shape of the bridge at the intersection portion 13b may be appropriately adjusted so that the plasma is in a desired state depending on the magnitude of the capacitive coupling. As the shape of the bridge, in addition to the semicircular shape as shown in Fig. 4, various shapes such as a rectangular shape as shown in Fig. 6A and a trapezoidal shape as shown in Fig. 6B can be considered. In addition, since the required plasma uniformity varies depending on the shape and size of the substrate G, which is the object to be processed, it is not necessary to form such a bridge for all the intersections 13b, and capacitive coupling in the intersections 13b is not necessary. Only those parts that need to be removed need to be partially formed. It is also possible to fill the cavity between the high frequency antenna 13 and the shower head 11 with a dielectric. Thereby, the time-lapse deformation of the bridge portion of the high frequency antenna can be prevented.

In addition, the inductively coupled plasma apparatus of this embodiment has the following effects. The shower head 11 functions as a supporting member of the dielectric wall 2, and since the shower head 11 is suspended from the ceiling of the main body container 1 by a suspender (not shown), the dielectric wall 2 ) Warping is prevented. Therefore, the dielectric wall 2 can be made thin and energy efficiency can be improved. In addition, since the dielectric wall 2 is configured by combining a plurality of divided pieces 2a, it is easy to manufacture even when a large dielectric wall is required.

In addition, since the high frequency antenna 13 is disposed to be substantially orthogonal to the extending direction of the cross shower head 11, the high frequency antenna 13 and the shower head 11 can be prevented to inductive coupling to a considerable extent. Thus, the induction field from the high frequency antenna 13 is prevented from being disturbed by the shower head 11.

In addition, although the high frequency antenna 13 constitutes a quadruple antenna, multiplexing in this way can reduce the inductance, lower the antenna impedance, and lower the antenna potential, so that the electric field distribution in the processing chamber 4 is more uniform. can do.

In addition, this invention is not limited to the said Example, A various deformation | transformation is possible. For example, in the above embodiment, the shower head is taken as an example of the conductive member between the high frequency antenna and the plasma. However, the present invention is not limited thereto, and a simple supporting member having no shower head function can be applied. Applicable

In addition, the shape of a high frequency antenna is not limited to the said embodiment, It may be a multiple antenna other than quadruple mentioned above, It may be a single vortex, and may be a completely different shape. The high frequency antenna does not necessarily need to be in contact with the dielectric wall, and may be separated from the dielectric wall as a whole as long as a desired plasma density can be obtained. The same effect can be obtained by increasing the distance from.

In the above embodiment, the case where the dielectric wall 2 is horizontally provided to form the ceiling wall of the processing chamber 4 and the planar high frequency antenna 13 is provided thereon is shown. It is not limited, for example, it may be a case where a dielectric wall comprises the side wall of a process chamber, and the high frequency antenna is wound in the coil shape around it.

Moreover, in the said embodiment, although the case where this invention was applied to the etching apparatus was shown, it is not limited to an etching apparatus, It can apply to other plasma processing apparatuses, such as sputtering and CVD film-forming. In addition, although an LCD substrate is used as the substrate to be processed, the present invention is not limited to this, but can also be applied to processing other substrates such as semiconductor wafers.

As described above, according to the present invention, a high frequency antenna is provided in a part of the wall portion of the processing chamber, particularly a portion corresponding to the dielectric wall constituting the upper wall, and a conductive member is provided between the high frequency antenna and the plasma formed in the processing chamber. In the structure provided, the high frequency antenna is provided so as to intersect with the conductive member at a plurality of intersections, and the distance between the high frequency antenna and the dielectric wall at the intersection is the high frequency antenna other than the plurality of intersections. And the dielectric material is larger than the shortest distance of the dielectric wall, and the capacitive coupling of the portion is made very small, so that the plasma at the position immediately below the intersection can be avoided. Therefore, the desired plasma uniformity can be ensured without lowering the plasma density, so that uniform plasma processing can be performed.

Claims (20)

Inductively coupled plasma processing apparatus An inductively coupled plasma processing apparatus for converting a processing gas into an induction electric field and subjecting a substrate to a plasma to be processed, A processing chamber in which plasma processing is performed on the substrate to be processed; A processing gas supply system for supplying a processing gas into the processing chamber; An exhaust system which exhausts the processing chamber, A dielectric wall constituting a part of the wall portion of the processing chamber; A high frequency antenna installed outside the processing chamber via the dielectric wall to supply high frequency power to form an induction field in the processing chamber; And a conductive member provided between the high frequency antenna and the plasma formed in the processing chamber, The high frequency antenna is provided so as to intersect the conductive member at a plurality of intersections, and the distance between the high frequency antenna and the dielectric wall at the intersection is such that the high frequency antenna and the dielectric other than the plurality of intersections. Characterized by greater than the shortest distance of the wall Inductively coupled plasma processing apparatus. An inductively coupled plasma processing apparatus for converting a processing gas into a plasma by an induction electric field to perform a plasma processing on a substrate to be processed. A processing chamber in which plasma processing is performed on the substrate to be processed; A processing gas supply system for supplying a processing gas into the processing chamber; An exhaust system which exhausts the processing chamber, A dielectric wall constituting an upper wall of the processing chamber; A high frequency antenna provided on the dielectric wall outside the processing chamber to supply an high frequency power to form an induction field in the processing chamber; A conductive member partially provided between the high frequency antenna and the substrate to be processed in the processing chamber; The high frequency antenna is provided so as to intersect the conductive member at a plurality of intersections, and the position of the high frequency antenna at one or more of the intersections is higher than a position other than the plurality of intersections. Inductively Coupled Plasma Treatment Apparatus. The method according to claim 1 or 2, The high-frequency antenna is provided so as to cover an existing portion of the conductive member at the one or more intersections. Inductively Coupled Plasma Treatment Apparatus. The method according to claim 1 or 2, The high frequency antenna is provided to be orthogonal to the conductive member. Inductively Coupled Plasma Treatment Apparatus. The method according to claim 1 or 2, The conductive member is a support member for supporting a dielectric wall. Inductively Coupled Plasma Treatment Apparatus. The method of claim 5, wherein The dielectric wall is configured by combining a plurality of divided pieces on the support member. Inductively coupled plasma processing apparatus. The method according to claim 1 or 2, The conductive member is a shower head for discharging a processing gas provided on a dielectric wall. Inductively Coupled Plasma Treatment Apparatus. The method of claim 7, wherein The shower head has a function of supporting the dielectric wall. Inductively Coupled Plasma Treatment Apparatus. The method of claim 8, The shower head has a cross shape, and the dielectric wall is configured by combining a plurality of divided pieces on the shower head. Inductively Coupled Plasma Treatment Apparatus. The method of claim 3, wherein The high frequency antenna is provided to be orthogonal to the conductive member. Inductively Coupled Plasma Treatment Apparatus. The method of claim 3, wherein The conductive member is a support member for supporting a dielectric wall. Inductively Coupled Plasma Treatment Apparatus. The method of claim 4, wherein The conductive member is a support member for supporting a dielectric wall. Inductively Coupled Plasma Treatment Apparatus. The method of claim 3, wherein The conductive member is a shower head for discharging a processing gas provided on a dielectric wall. Inductively Coupled Plasma Treatment Apparatus. The method of claim 4, wherein The conductive member is a shower head for discharging a processing gas provided on a dielectric wall. Inductively Coupled Plasma Treatment Apparatus. The method of claim 11, The dielectric wall is configured by combining a plurality of divided pieces on the support member. Inductively Coupled Plasma Treatment Apparatus. The method of claim 12, The dielectric wall is configured by combining a plurality of divided pieces on the support member. Inductively Coupled Plasma Treatment Apparatus. The method of claim 13, The shower head has a function of supporting the dielectric wall. Inductively Coupled Plasma Treatment Apparatus. The method of claim 14, The shower head has a function of supporting the dielectric wall. Inductively Coupled Plasma Treatment Apparatus. The method of claim 17, The shower head has a cross shape, and the dielectric wall is configured by combining a plurality of divided pieces on the shower head. Inductively Coupled Plasma Treatment Apparatus. The method of claim 18, The shower head has a cross shape, and the dielectric wall is configured by combining a plurality of divided pieces on the shower head. Inductively Coupled Plasma Treatment Apparatus.