CN208422879U - Load plate is adopted outside a kind of - Google Patents
Load plate is adopted outside a kind of Download PDFInfo
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- CN208422879U CN208422879U CN201820997155.0U CN201820997155U CN208422879U CN 208422879 U CN208422879 U CN 208422879U CN 201820997155 U CN201820997155 U CN 201820997155U CN 208422879 U CN208422879 U CN 208422879U
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- Prior art keywords
- support construction
- substrate
- load plate
- groove
- disk
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- 239000000758 substrate Substances 0.000 claims abstract description 57
- 238000010276 construction Methods 0.000 claims abstract description 49
- 239000000463 material Substances 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 11
- 150000004767 nitrides Chemical class 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Abstract
The utility model belongs to field of semiconductor devices, more particularly to load plate is adopted outside one kind, include at least disk body, and the plurality of grooves being set on the disk body, it is characterized by: being provided with the support construction of carrying substrate in the groove, the support construction is contacted with the bottom surface of substrate and side.The utility model can be effectively improved epitaxial wafer growth temperature and be unevenly distributed and warpage issues, and then improve epitaxial wafer film thickness, quality problem of non-uniform, promote process rate, and reduce production cost.
Description
Technical field
The utility model, which belongs to outside field of semiconductor devices, more particularly to one kind, adopts load plate.
Background technique
Nitride-based semiconductor is commonly utilized in blue and green light and white light LED and SBD HEMT constant power group at present
On part, and the considerations of due to productivity effect and cost, extension chip size by 2 cun of wafers of early stage to 4 cun of current mainstream or
6 cun of wafers, extension chip size is increasing, to the warpage of chip control and to epitaxial wafer composition, thickness, quality consistency
It is required that also higher and higher.
But due to lacking suitable and cheap large scale nitride homo-substrate at present, so using heterogeneous lining mostly at present
Bottom carries out epitaxial growth and adopts that is, on such as Sapphire Substrate (sapphire), silicon substrate (Si) or silicon carbide (SiC) substrate
With organic vapor phase deposition method (MOCVD), epitaxial growth nitride forms epitaxial wafer in the high temperature environment.And due to substrate and nitridation
The lattice size and thermal expansion coefficient of object have difference, and high growth temperature environment causes substrate that warpage occurs, and then makes nitride
Growth temperature it is uneven, so as to cause the central area of epitaxial wafer, there are the non-uniform phenomenons such as thickness, quality with fringe region.
Simultaneously as substrate, which is placed in graphite plate, carries out epitaxial growth, and substrate is different from graphite plate material, therefore there are substrates and graphite
Temperature distribution is non-uniform for the contact area of disk and non-contact area, and the central area of epitaxial wafer is similarly caused to be deposited with fringe region
In non-uniform phenomenons such as thickness, quality.
And reaction gas is high compared with non-contact area in substrate and graphite plate contact area reaction efficiency, to generate extension
The nitride film of growth is thicker than the fringe region of substrate compared with central area thickness, and the component photoelectric characteristic in turn resulting in edge is abnormal,
Influence the yield and uniformity of production.
Summary of the invention
In order to solve the above problem, the utility model provides and adopts load plate outside one kind, is used for epitaxial growth nitride epitaxial
Piece can be effectively improved epitaxial wafer growth temperature and be unevenly distributed and warpage issues, and then it is uneven to improve epitaxial wafer film thickness, quality
Even problem promotes process rate, and reduces production cost.
The specific technical solution of the utility model is as follows:
Load plate is adopted outside a kind of, includes at least disk body, and the plurality of grooves being set on the disk body, feature exist
In: the support construction of carrying substrate is provided in the groove, the support construction is contacted with the bottom surface of substrate and side.
Preferably, the surface of the support construction is provided with the first concaveconvex structure, and the bottom surface of the substrate is provided with second
Concaveconvex structure, first concaveconvex structure are embedded in the second concaveconvex structure, substrate are fixed in support construction.
Preferably, the support construction is identical as substrate material.
Preferably, the support construction is sapphire, silicon, silicon carbide, gallium nitride material.
Preferably, the depth of the groove be greater than or equal to support construction outside bottom surface at a distance from disc surfaces, it is recessed
The opening diameter of slot is then equal to the distance between the lateral surface of support construction.
Preferably, the diameter of the substrate and the internal diameter of support construction are identical, and the thickness of substrate is less than or equal to support knot
The depth of the distance from bottom disc surfaces of structure.
Preferably, the support construction is to be removable installed in groove.
Preferably, the groove is Tab disk, Rim disk or Gear disk.
The utility model can be effectively improved epitaxial wafer growth temperature and be unevenly distributed and warpage issues, and then improve extension
Piece film thickness, quality problem of non-uniform promote process rate, and reduce production cost.
Detailed description of the invention
Fig. 1 is the overlooking structure diagram of the embodiment one of the utility model.
Fig. 2 is the side structure schematic view of the embodiment one of the utility model.
Fig. 3 is the side structure schematic view of the embodiment two of the utility model.
Specific embodiment
The utility model is more specifically described by way of example referring to attached drawing in the following passage.According to following explanation and power
The advantages of sharp claim, the utility model and feature will become apparent from.It should be noted that attached drawing be all made of very simplified form and
Non-accurate ratio is used, only to convenient, lucidly aid illustration the utility model embodiment purpose.
Embodiment 1
Referring to attached Fig. 1 and 2, one kind disclosed by the utility model is outer to adopt load plate, includes at least disk body 10, and be set to
Plurality of grooves 20 on the disk body is provided with the support construction 40 of carrying substrate 30, support construction 40 and lining in groove 20
The bottom surface at bottom 30 and side contact.
Support construction 40 is to be removable installed in groove 20, when its damage, can directly replace support construction 40 i.e.
Can, without replacing entire load plate, to reduce production cost.
Groove 20 is that Tab disk, Rim disk or Gear disk in actual use can be according to MOCVD type and lifes
It produces and needs, the groove 20 that design or selection are suitble to.
Further, for improve between substrate 30 and disk body 10 as material it is different caused by the coefficient of heat conduction difference,
The present embodiment is preferably and the material of support construction 40 that contacts of substrate 30 is identical as 30 material of substrate, such as the material of support construction 40
Matter can be sapphire, silicon, silicon carbide, gallium nitride material etc., so as to improve due to disk body and substrate contact area temperature are higher
Caused production yield and uniformity abnormal phenomenon.
As shown in Fig. 2, designing groove 20 in the present embodiment to be placed in support construction 40 just in groove 20
Depth D1(, that is, groove 20 bottom is at a distance from 10 surface of disk body) it is greater than or equal to the outside bottom surface and disk body of support construction 40
The distance L1 on 10 surfaces.Specifically, then D1 is greater than L1, and 20 bottom of groove is convex, then when 20 bottom of groove is recess
D1 is equal to L1.For example, the side wall of groove 20 has a step, and bottom is lower spill, at this point, support knot when groove 20 is Tab disk
Structure 40 is then placed on step, and the depth D1 of groove 20 is greater than the outside bottom surface and 10 surface distance L1 of disk body of support construction 40.
And the opening diameter D2 of groove 20 is then equal to the distance between the lateral surface of support construction 40 L2.Design the big of the diameter of groove 20
Small purpose is to prevent 20 volume of groove larger, and support construction 40 is caused to be unable to fully filling groove 20, and then generates support knot
Structure 40 is abnormal because producing caused by shaking in epitaxial process.
Equally, for prevent during the growth process substrate 30 because shaking hit support construction 40, design substrate in the present embodiment
30 diameter D2 is identical as the internal diameter L2 of support construction 40, and the thickness of substrate 30 be less than or equal to support construction 30 bottom away from
The depth on 10 surface of separation disc body so that substrate 30 is placed in just in support construction 40, and fills the space in support construction 40.
When support construction 40 and when 30 material difference of substrate, in epitaxial process reaction gas 30 surface of substrate not
It is different with the deposited concentration in region, specially 30 surface of substrate close to 40 side of support construction reaction gas deposited concentration compared with
Height, to form thicker epitaxial film, i.e. the outer region of substrate 30 is thicker compared with the epitaxial film of its central area, so as to cause outer
Prolong the in uneven thickness of layer.And in the present embodiment, design support construction 40 is identical as 30 material of substrate, can be effectively improved substrate table
The problem of long membrane thickness unevenness of looking unfamiliar.
In addition, when support construction 40 and 30 material difference of substrate, in epitaxial high temperature growth course, since the heat of the two passes
Coefficient difference is led, causes the two contact area temperature higher, to generate the inhomogeneities of epitaxial wafer growth quality, and then is reduced
The yield and uniformity of production.Load plate in the present embodiment can be effectively improved the yield and uniformity of production.
Embodiment 2
Referring to attached drawing 3, the present embodiment the difference from embodiment 1 is that, the surface of support construction 40 be provided with first bumps
Structure 41,30 bottom surface of substrate are provided with the second concaveconvex structure 31, and the first concaveconvex structure 41 is embedded in the second concaveconvex structure 42, will serve as a contrast
Bottom 30 is fixed in support construction 40.
In epitaxial process, since hot environment causes substrate 30 to generate warpage, further make its Temperature Distribution not
Uniformly, second concaveconvex structure 31 is set in the bottom surface of substrate 30 and in the present embodiment, and the second concaveconvex structure 31 and first recessed
Male structure 41 inlays cooperation, while support construction 40 is identical with 30 material of substrate, is equivalent to and makees substrate 30 and support construction 40
For the thicker whole novel substrate of a thickness, the subsequent novel substrate growing epitaxial layers thicker in this thickness, due to novel
The thickness of substrate is thicker, so as to improve its warpage degree, makes Temperature Distribution more evenly, is further effectively improved the good of production
Rate and uniformity.In addition, certain in the whole novel substrate overall thickness being made of substrate 30 and support construction 40 in the present embodiment
Under conditions of, the thickness of substrate 30 and support construction 40 can also be adjusted, so that the mesh of improvement epitaxial wafer warpage also may be implemented
's.Such as can choose relatively thin substrate 30 and thicker support construction 40, after epitaxial growth, it on the one hand can improve existing skill
The warpage generated in art because substrate 30 is relatively thin, on the other hand, due to selecting relatively thin substrate 30, in subsequent chip technology system
Cheng Zhong can carry out the technological operations such as sliver, scribing without organic semiconductor device 30, simplify process flow.
It should be understood that above-mentioned specific embodiment is the preferred embodiment of the utility model, the model of the utility model
It encloses and is not limited to the embodiment, all any changes done according to the utility model, all within the category protection scope of the utility model.
Claims (8)
1. adopting load plate outside a kind of, disk body is included at least, and the plurality of grooves being set on the disk body, feature exist
In: the support construction of carrying substrate is provided in the groove, the support construction is contacted with the bottom surface of substrate and side.
2. a kind of outer load plate that adopts according to claim 1, it is characterised in that: the surface of the support construction is provided with the
One concaveconvex structure, the bottom surface of the substrate are provided with the second concaveconvex structure, and first concaveconvex structure is embedded in the second concaveconvex structure
It is interior, substrate is fixed in support construction.
3. one kind according to claim 1 or 2 is outer to adopt load plate, it is characterised in that: the support construction and substrate material
It is identical.
4. one kind according to claim 3 is outer to adopt load plate, it is characterised in that: the support construction is sapphire, silicon, carbon
SiClx, gallium nitride material.
5. one kind according to claim 1 is outer to adopt load plate, it is characterised in that: the depth of the groove is greater than or equal to branch
The outside bottom surface of support structure at a distance from disc surfaces, the opening diameter of groove be then equal between the lateral surface of support construction away from
From.
6. a kind of outer load plate that adopts according to claim 1, it is characterised in that: the diameter of the substrate and support construction
Internal diameter is identical, and the thickness of substrate is less than or equal to the depth of the distance from bottom disc surfaces of support construction.
7. one kind according to claim 1 is outer to adopt load plate, it is characterised in that: the support construction is to be removably disposed
In in groove.
8. a kind of outer load plate that adopts according to claim 1, it is characterised in that: the groove be Tab disk, Rim disk or
Gear disk.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820997155.0U CN208422879U (en) | 2018-06-27 | 2018-06-27 | Load plate is adopted outside a kind of |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820997155.0U CN208422879U (en) | 2018-06-27 | 2018-06-27 | Load plate is adopted outside a kind of |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208422879U true CN208422879U (en) | 2019-01-22 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820997155.0U Active CN208422879U (en) | 2018-06-27 | 2018-06-27 | Load plate is adopted outside a kind of |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208422879U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113846375A (en) * | 2021-09-24 | 2021-12-28 | 深圳市中科芯辰科技有限公司 | Carrier tray and organic metal vapor deposition equipment |
-
2018
- 2018-06-27 CN CN201820997155.0U patent/CN208422879U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113846375A (en) * | 2021-09-24 | 2021-12-28 | 深圳市中科芯辰科技有限公司 | Carrier tray and organic metal vapor deposition equipment |
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