CN107845569A - A kind of compound substrate and preparation method thereof - Google Patents
A kind of compound substrate and preparation method thereof Download PDFInfo
- Publication number
- CN107845569A CN107845569A CN201711063388.XA CN201711063388A CN107845569A CN 107845569 A CN107845569 A CN 107845569A CN 201711063388 A CN201711063388 A CN 201711063388A CN 107845569 A CN107845569 A CN 107845569A
- Authority
- CN
- China
- Prior art keywords
- substrate
- functional layer
- stress compensation
- stress
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 150
- 150000001875 compounds Chemical class 0.000 title claims abstract description 37
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000002346 layers by function Substances 0.000 claims abstract description 55
- 239000010410 layer Substances 0.000 claims abstract description 31
- 239000000835 fiber Substances 0.000 claims abstract description 9
- 238000003780 insertion Methods 0.000 claims description 2
- 230000037431 insertion Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 9
- 238000005452 bending Methods 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical group [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 208000012868 Overgrowth Diseases 0.000 description 1
- 241000270708 Testudinidae Species 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of compound substrate and preparation method thereof, wherein the compound substrate includes：Substrate；And positioned at the patterned stress compensation functional layer of the substrate back；The fiber yarn of the stress compensation functional layer is more than the thermal coefficient of expansion of the substrate and/or the equivalent lattice constant of stress compensation functional layer is less than the lattice constant of the substrate.Technical scheme is solved in conventional substrate, and particularly in large-sized substrate Epitaxial growth, stress is larger in epitaxial device, easily deforms and causes epitaxial layer lack of homogeneity or even the problem of be cracked.
Description
Technical field
The present embodiments relate to semiconductor photoelectronic device manufacturing field, more particularly to a kind of compound substrate and its preparation
Method.
Background technology
Nitride-based semiconductor is as third generation semi-conducting material, with energy gap is big, disruptive field intensity is high, saturated electrons are moved
Speed height, the chemical stability that thermal conductivity is big, dielectric constant is small, capability of resistance to radiation is strong and good are moved, is adapted to make anti-spoke
Penetrate, high frequency, high-power and High Density Integration electronic device, and blue, green and ultraviolet light emitting device and optical detection can be made
Device.
Third generation semi-conducting nitride metal organic chemical vapor deposition (Metal-organic Chemical Vapor
Deposition, MOCVD) epitaxial growth is substantially and carried out in silicon, sapphire, single-crystal silicon carbide substrate, due to substrate with
Larger thermal mismatching and lattice mismatch between epitaxial material be present so that produced during epitaxial growth, in epitaxial device huge
Big stress, the performance to device bring bad influence, particularly large-sized substrate easily to become during epitaxial growth
Shape, cause epitaxial layer uniformity poor or even be cracked.
Existing MOCVD technologies are by adjusting epitaxy technique parameter (temperature, time, pressure and flow etc.), epitaxial lateral overgrowth
Growth carries out stress regulation and control the methods of superlattices alternating growth, realizes reduced size (such as 2-6 English to a certain extent
It is very little) silica-based nitride epitaxial growth, preferably control influence of the stress to device performance.But for large-size (such as 8-
12 inches) silicon substrate thing nitride epitaxial growth still has larger challenge in terms of uniformity and stress regulation and control.
The content of the invention
The present invention provides a kind of compound substrate and preparation method thereof, to solve in conventional substrate, particularly in large scale
During substrate Epitaxial growth, stress is larger in epitaxial device, easily deforms and causes epitaxial layer lack of homogeneity or even be cracked
The problem of.
In a first aspect, the embodiments of the invention provide a kind of compound substrate, the compound substrate includes：
Substrate；
And positioned at the patterned stress compensation functional layer of substrate back；
Wherein, the fiber yarn of stress compensation functional layer is more than the thermal coefficient of expansion and/or stress compensation of substrate
The equivalent lattice constant of functional layer is less than the lattice constant of substrate.
Optionally, stress compensation functional layer is deposited directly to substrate back.
Optionally, substrate back is formed fluted, in the groove of at least partially embedded substrate back of stress compensation functional layer.
Optionally, stress compensation functional layer includes one or more annulus figures, and including it is multiple when, multiple annulus figures
Concentric ring is formed, and is arranged concentrically with substrate.
Optionally, the number of concentric ring is n, 1≤n≤100；
The width of each concentric ring is equal, and the width of concentric ring is w, 1 μm≤w≤300mm；
The thickness of each concentric ring is equal, and the thickness of concentric ring is t, 0.1nm≤t≤10 μm.
Optionally, the spacing of neighboring concentric interannular is equal, and neighboring concentric interannular is away from for d, 10 μm≤d≤300mm.
Optionally, stress compensation function composition of layer is single compound or two or more compounds.
Second aspect, the embodiment of the present invention additionally provide a kind of preparation method of compound substrate, and this method includes following step
Suddenly：
Substrate is provided；
Patterned stress compensation functional layer is prepared in substrate back,
Wherein, stress compensation functional layer fiber yarn is more than the thermal coefficient of expansion and/or stress compensation work(of substrate
The equivalent lattice constant of ergosphere is less than substrate lattice constant.
Optionally, patterned stress compensation functional layer is prepared in substrate back, including：
Stress compensation functional layer is directly deposited on substrate back.
Optionally, patterned stress compensation functional layer is prepared in substrate back, including：
Groove is formed in substrate back；
Stress compensation functional layer is deposited on substrate back, and at least part stress compensation functional layer is embedded in substrate back
In groove.
The present invention is solved in conventional substrate, particularly by setting stress compensation functional layer at the conventional substrate back side
In large-sized substrate Epitaxial growth, stress is larger in epitaxial device, easily deforms and causes epitaxial layer lack of homogeneity
The problem of being even cracked.
Brief description of the drawings
Fig. 1 is the bottom view of the compound substrate in the embodiment of the present invention one；
Procedure charts of the Fig. 2 in conventional substrate Epitaxial growth；
Fig. 3 is the procedure chart in compound substrate Epitaxial growth；
Fig. 4 is the front view of the compound substrate in the embodiment of the present invention one；
Fig. 5 is the front view of another compound substrate in the embodiment of the present invention one；
Fig. 6 is the flow chart of the preparation method of the compound substrate in the embodiment of the present invention two.
Embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention, rather than limitation of the invention.It also should be noted that in order to just
Part related to the present invention rather than entire infrastructure are illustrate only in description, accompanying drawing.
Embodiment one
Fig. 1 is a kind of bottom view for compound substrate that the embodiment of the present invention one provides, as shown in figure 1, the compound substrate bag
Include substrate 10 and positioned at the patterned stress compensation functional layer 20 of substrate back；
Wherein, the fiber yarn of stress compensation functional layer 20 is more than the thermal coefficient of expansion and/or stress of substrate 10
The equivalent lattice constant of compensation function layer 20 is less than the lattice constant of substrate 10.
Wherein, stress compensation functional layer 20 is used for compensating in deposition process caused stress in substrate 10, compensates stress
Stress caused by lattice mismatch between substrate 10 and stress compensation functional layer 20, or stress caused by thermal mismatching.
Optionally, substrate 10 can be one in more than 6 inches monocrystalline substrates, Sapphire Substrate or SiC single crystal substrate
Kind, stress compensation functional layer can be aluminium nitride (AlN) or carborundum (SiC) material.
Fig. 2 is the procedure chart in conventional substrate Epitaxial growth, as shown in Fig. 2 due to existing between epitaxial layer and substrate
Larger thermal mismatching and lattice mismatch, in the heating initial growth stages of epitaxial growth, substrate should by the pressure from epitaxial layer
Power F1 and produce bending, particularly in large-sized substrate Epitaxial growth, bending it is more serious, it is uniform to the performance of epitaxial device
Property has considerable influence；In temperature-fall period, thermal mismatching and lattice mismatch can cause bigger pressure stress F 1 ' in substrate, accordingly,
Epitaxial layer will bear from big tensile stress such as substrate and F1 ', easily to cause epitaxial layer to produce larger bending or even be cracked.
Fig. 3 is the procedure chart in compound substrate Epitaxial growth provided in an embodiment of the present invention, as shown in figure 3, due to answering
The fiber yarn of force compensating functional layer is more than the thermal coefficient of expansion of substrate and/or the equivalent lattice of stress compensation functional layer
Constant is less than the lattice constant of substrate, and in the heating initial growth stages of epitaxial growth, substrate is by from stress compensation function
The tension F2 of layer, compensation substrate are reduced bending of the substrate in temperature-rise period, realized by the pressure stress F 1 from epitaxial layer
Substrate is flat in most growth courses, so as to improve the performance uniformity of epitaxial device；In temperature-fall period, substrate by
The tension F2 ' of arrival seif-citing rate compensation function layer, compensation substrate is by the pressure stress F 1 ' of epitaxial layer, and accordingly, epitaxial layer is held
Also it is compensated by the tensile stress from substrate, advantageously reduces substrate flexibility in temperature-fall period, avoid epitaxial layer from being cracked.
The technical scheme of the embodiment of the present invention, by setting stress compensation functional layer at the conventional substrate back side, solve
In conventional substrate, particularly in large-sized substrate Epitaxial growth, stress is larger in epitaxial device, easily deforms and leads
The problem of causing epitaxial layer lack of homogeneity to be even cracked.
Fig. 4 is the front view of the compound substrate in the embodiment of the present invention one, as shown in figure 4, the compound substrate includes substrate
11 and positioned at the patterned stress compensation functional layer 21 of substrate back, wherein, stress compensation functional layer is deposited directly to substrate
The back side, for compensating in deposition process, caused compression, prevents substrate from deforming and causes epitaxial layer uniform in substrate
Property difference even be cracked the problem of.
Fig. 5 is the front view of another compound substrate in the embodiment of the present invention one, as shown in figure 5, the compound substrate bag
Include substrate 12 and positioned at the patterned stress compensation functional layer 22 of substrate back, wherein, substrate back forms fluted, stress
In the groove of at least partially embedded substrate back of compensation function layer, for compensating in deposition process, caused pressure should in substrate
Power, the problem of preventing substrate from deforming and cause epitaxial layer lack of homogeneity or even be cracked.
Optionally, stress compensation functional layer includes one or more annulus figures, and including it is multiple when, multiple annulus figures
Concentric ring is formed, and is arranged concentrically with substrate.
Optionally, the number of concentric ring is n, 1≤n≤100；
The width of each concentric ring is equal, and the width of concentric ring is w, 1 μm≤w≤300mm；
The thickness of each concentric ring is equal, and the thickness of concentric ring is t, 0.1nm≤t≤10 μm；
The spacing of neighboring concentric interannular is equal, and neighboring concentric interannular is away from for d, 10 μm≤d≤300mm.
Equal by the width and thickness that set concentric ring, the spacing of neighboring concentric interannular is equal, makes stress compensation function
Layer is evenly distributed on substrate back, so as to which compensation stress stepless action caused by stress compensation functional layer is on substrate.Optionally,
Compensation the stress F2 and F2 ' of stress compensation functional layer size can be adjusted by adjusting the number and thickness of concentric ring.
Stress compensation function composition of layer can be single compound, such as aluminium nitride (AlN) or carborundum (SiC), also may be used
Think two or more compounds.The high temperature in deposition process can be born, while epitaxial layer will not be polluted.Optionally, Ke Yitong
The stress compensation functional layer of selection unlike material is crossed, adjusts the thermal expansion coefficient difference between substrate and stress compensation functional layer
And/or differences between lattice constant, compensation the stress F2 and F2 ' of regulation stress compensation functional layer size.
Embodiment two
Fig. 6 is the flow chart of the preparation method of the compound substrate in the embodiment of the present invention two, as shown in fig. 6, this method bag
Include following steps：
S1：Substrate is provided；
S2：Patterned stress compensation functional layer is prepared in substrate back.
Wherein, stress compensation functional layer fiber yarn is more than the thermal coefficient of expansion and/or stress compensation work(of substrate
The equivalent lattice constant of ergosphere is less than substrate lattice constant.
Because the fiber yarn of stress compensation functional layer is more than the thermal coefficient of expansion and/or stress compensation work(of substrate
The equivalent lattice constant of ergosphere is less than substrate lattice constant, and in the temperature rise period of epitaxial growth, substrate is by from stress compensation
The tension F2 of functional layer, compensation substrate are reduced bending of the substrate in temperature-rise period by the pressure stress F 1 from epitaxial layer,
Realize that substrate in most growth courses is flat, so as to improve the performance uniformity of epitaxial device；In temperature-fall period, lining
Bottom is compensated pressure stress F 1 ' of the substrate by epitaxial layer, accordingly, extension by the tension F2 ' from stress compensation functional layer
Layer bears the tensile stress from substrate and is also compensated, and advantageously reduces substrate flexibility in temperature-fall period, avoids epitaxial layer tortoise
Split.
The technical scheme of the embodiment of the present invention, by setting stress compensation functional layer at the conventional substrate back side, solve
In conventional substrate, particularly in large-sized substrate Epitaxial growth, stress is larger in epitaxial device, easily deforms and leads
The problem of causing epitaxial layer lack of homogeneity to be even cracked.
Optionally, stress compensation functional layer can now form the figure of layout by semiconductor photolithography method in substrate back
Shape, then prepared by the physical vaporous deposition such as metal organic chemical vapor deposition (MOCVD) or sputtering.
Optionally, patterned stress compensation functional layer is prepared in substrate back, can be directly by the stress compensation work(
Ergosphere is deposited on the substrate back.Groove first can also be formed in substrate back, then be deposited on stress compensation functional layer
Substrate back, and in the groove of at least part stress compensation functional layer insertion substrate back.
Pay attention to, above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that
The invention is not restricted to specific embodiment described here, can carry out for a person skilled in the art various obvious changes,
Readjust and substitute without departing from protection scope of the present invention.Therefore, although being carried out by above example to the present invention
It is described in further detail, but the present invention is not limited only to above example, without departing from the inventive concept, also
Other more equivalent embodiments can be included, and the scope of the present invention is determined by scope of the appended claims.
Claims (10)
- A kind of 1. compound substrate, it is characterised in that including：Substrate；And positioned at the patterned stress compensation functional layer of the substrate back；The fiber yarn of the stress compensation functional layer is more than the thermal coefficient of expansion and/or stress compensation work(of the substrate The equivalent lattice constant of ergosphere is less than the lattice constant of the substrate.
- 2. compound substrate according to claim 1, it is characterised in that the stress compensation functional layer is deposited directly to substrate The back side.
- 3. compound substrate according to claim 1, it is characterised in that the substrate back forms fluted, the stress In the groove of at least partially embedded substrate back of compensation function layer.
- 4. compound substrate according to claim 1, it is characterised in that the stress compensation functional layer includes one or more Annulus figure, and including it is multiple when, multiple annulus figure constitution concentric rings, and being arranged concentrically with substrate.
- 5. compound substrate according to claim 4, it is characterised in that the number of the concentric ring is n, 1≤n≤100；The width of each concentric ring is equal, and the width of the concentric ring is w, 1 μm≤w≤300mm；The thickness of each concentric ring is equal, and the thickness of the concentric ring is t, 0.1nm≤t≤10 μm.
- 6. compound substrate according to claim 4, it is characterised in thatThe spacing of neighboring concentric interannular is equal, and neighboring concentric interannular is away from for d, 10 μm≤d≤300mm.
- 7. compound substrate according to claim 1, it is characterised in that the stress compensation function composition of layer is single chemical combination Thing or two or more compounds.
- 8. the preparation method of a kind of compound substrate any one of claim 1-7, it is characterised in that including following Step：Substrate is provided；Patterned stress compensation functional layer is prepared in substrate back,The stress compensation functional layer fiber yarn is more than the thermal coefficient of expansion and/or stress compensation function of the substrate The equivalent lattice constant of layer is less than the substrate lattice constant.
- 9. the preparation method of compound substrate according to claim 8, described to prepare patterned stress benefit in substrate back Functional layer is repaid, including：The stress compensation functional layer is directly deposited on the substrate back.
- 10. the preparation method of compound substrate according to claim 8, described to prepare patterned stress benefit in substrate back Functional layer is repaid, including：Groove is formed in the substrate back；The stress compensation functional layer is deposited on the substrate back, and at least part stress compensation functional layer insertion substrate back of the body In the groove in face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711063388.XA CN107845569A (en) | 2017-11-02 | 2017-11-02 | A kind of compound substrate and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711063388.XA CN107845569A (en) | 2017-11-02 | 2017-11-02 | A kind of compound substrate and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107845569A true CN107845569A (en) | 2018-03-27 |
Family
ID=61682172
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711063388.XA Pending CN107845569A (en) | 2017-11-02 | 2017-11-02 | A kind of compound substrate and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107845569A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111384150A (en) * | 2018-12-29 | 2020-07-07 | 苏州能讯高能半导体有限公司 | Composite substrate, manufacturing method thereof and semiconductor device |
| WO2022011641A1 (en) * | 2020-07-16 | 2022-01-20 | 华为技术有限公司 | Method for manufacturing gan device, and gan device |
| CN113965031A (en) * | 2021-11-02 | 2022-01-21 | 江苏联博精密科技有限公司 | Welding tool with stress compensation function for stator |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050208776A1 (en) * | 2004-03-22 | 2005-09-22 | Texas Instruments Inc. | Interface improvement by stress application during oxide growth through use of backside films |
| CN101075588A (en) * | 2006-05-16 | 2007-11-21 | 台湾积体电路制造股份有限公司 | Semiconductor structure, semiconductor chip and manufacturing method thereof |
| CN101552271A (en) * | 2008-03-20 | 2009-10-07 | 硅电子股份公司 | Semiconductor chip with heteroepitaxy layer and method for manufacture the chip |
| CN101924058A (en) * | 2008-11-12 | 2010-12-22 | 台湾积体电路制造股份有限公司 | Method for reducing chip warpage |
-
2017
- 2017-11-02 CN CN201711063388.XA patent/CN107845569A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050208776A1 (en) * | 2004-03-22 | 2005-09-22 | Texas Instruments Inc. | Interface improvement by stress application during oxide growth through use of backside films |
| CN101075588A (en) * | 2006-05-16 | 2007-11-21 | 台湾积体电路制造股份有限公司 | Semiconductor structure, semiconductor chip and manufacturing method thereof |
| CN101552271A (en) * | 2008-03-20 | 2009-10-07 | 硅电子股份公司 | Semiconductor chip with heteroepitaxy layer and method for manufacture the chip |
| CN101924058A (en) * | 2008-11-12 | 2010-12-22 | 台湾积体电路制造股份有限公司 | Method for reducing chip warpage |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111384150A (en) * | 2018-12-29 | 2020-07-07 | 苏州能讯高能半导体有限公司 | Composite substrate, manufacturing method thereof and semiconductor device |
| CN111384150B (en) * | 2018-12-29 | 2022-08-02 | 苏州能讯高能半导体有限公司 | Composite substrate, manufacturing method thereof and semiconductor device |
| WO2022011641A1 (en) * | 2020-07-16 | 2022-01-20 | 华为技术有限公司 | Method for manufacturing gan device, and gan device |
| CN113965031A (en) * | 2021-11-02 | 2022-01-21 | 江苏联博精密科技有限公司 | Welding tool with stress compensation function for stator |
| CN113965031B (en) * | 2021-11-02 | 2024-05-03 | 江苏联博精密科技股份有限公司 | Welding tool with stress compensation function for stator |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5944489B2 (en) | Semiconductor thin film structure and method for forming the same | |
| CN107845569A (en) | A kind of compound substrate and preparation method thereof | |
| KR20130045492A (en) | Wafer and method of fabrication thin film | |
| WO2009157514A1 (en) | Film deposition method | |
| US20150035123A1 (en) | Curvature compensated substrate and method of forming same | |
| KR20150002066A (en) | Epitaxial wafer | |
| KR102098297B1 (en) | Epitaxial wafer | |
| KR102231643B1 (en) | METHOD FOR GROWIG SiC EPITAXIAL LAYER AND POWER DEVICE | |
| KR20140073646A (en) | Gallium nitride substrate and a fabricating method thereof to reduce stress | |
| CN105568371A (en) | Graphite disc for improving mean value of wavelengths of all rings of silicon-based nitride | |
| JP2005536883A (en) | MBE growth of AlGaN single layer or AlGaN multilayer structure | |
| KR102565964B1 (en) | Epitaxial wafer and method for fabricating the same | |
| JP2006351870A (en) | Semiconductor epitaxial wafer | |
| KR20110090576A (en) | Method for manufacturing gallium nitride wafer | |
| US20140353684A1 (en) | Silicon carbide epitaxial wafer and method for fabricating the same | |
| CN106935691A (en) | A kind of epitaxial preparation method of InGaN | |
| KR102474331B1 (en) | Epitaxial wafer and method for fabricating the same | |
| KR101083496B1 (en) | Method for Manufacturing Gallium Nitride Wafer | |
| US20120309178A1 (en) | Method of manufacturing free-standing substrate | |
| KR102339608B1 (en) | Epitaxial wafer and method for fabricating the same | |
| KR102165615B1 (en) | Epitaxial wafer | |
| KR101905860B1 (en) | Method of fabrication wafer | |
| KR20130078984A (en) | Method for fabricating gallium nitride substrate | |
| KR102128495B1 (en) | Epitaxial wafer | |
| KR20130115024A (en) | Apparatus and method for manufacturing semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20200513 Address after: 200072 5th floor, No.11 and 12, Lane 299, Wenshui Road, Jing'an District, Shanghai Applicant after: China Resources Microelectronics Holding Co., Ltd Address before: Wujiang District of Suzhou City, Jiangsu province 215211 Lili town FENHU Road No. 558 Applicant before: SINOPOWER SEMICONDUCTOR Co.,Ltd. |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180327 |