CN111384150A - Composite substrate, manufacturing method thereof and semiconductor device - Google Patents
Composite substrate, manufacturing method thereof and semiconductor device Download PDFInfo
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- CN111384150A CN111384150A CN201811641056.XA CN201811641056A CN111384150A CN 111384150 A CN111384150 A CN 111384150A CN 201811641056 A CN201811641056 A CN 201811641056A CN 111384150 A CN111384150 A CN 111384150A
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- 239000000758 substrate Substances 0.000 title claims abstract description 230
- 239000002131 composite material Substances 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- 239000010410 layer Substances 0.000 claims abstract description 139
- 239000002346 layers by function Substances 0.000 claims abstract description 61
- 238000000034 method Methods 0.000 claims description 36
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 35
- 230000008569 process Effects 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 17
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 description 33
- 239000000463 material Substances 0.000 description 16
- 229910052594 sapphire Inorganic materials 0.000 description 14
- 239000010980 sapphire Substances 0.000 description 14
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 12
- 239000010409 thin film Substances 0.000 description 11
- 229910010271 silicon carbide Inorganic materials 0.000 description 10
- 229910002601 GaN Inorganic materials 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 238000011065 in-situ storage Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
Abstract
The embodiment of the invention provides a composite substrate, a manufacturing method thereof and a semiconductor device, wherein the composite substrate comprises a substrate and a stress compensation functional layer manufactured on the back surface of the substrate, and one surface of the stress compensation functional layer, which is far away from the substrate, is a curved surface. The invention ensures that the parameter uniformity of the epitaxial layer grown based on the composite substrate is better, and effectively ensures the consistency of the performance parameters of the epitaxial layer.
Description
Technical Field
The invention relates to the technical field of microelectronics, in particular to a composite substrate, a manufacturing method thereof and a semiconductor device.
Background
For a GaN (gallium nitride) HEMT (High Electron Mobility Transistor), when an epitaxial layer or a barrier layer and other key layers are grown on the basis of a substrate, due to the fact that large thermal mismatch, lattice mismatch and other problems exist between the substrate and the epitaxial layer, a substrate is warped due to large stress (such as compressive stress or tensile stress) generated in the epitaxial layer growing process, and then the epitaxial layer grown on the basis of the substrate has a uniformity problem, especially for the growth of a large-size epitaxial layer.
Disclosure of Invention
In view of the above, the present invention provides a composite substrate, a method for manufacturing the same, and a semiconductor device, which can effectively solve the above problems.
In one aspect, a preferred embodiment of the present invention provides a composite substrate applied to a semiconductor device, the composite substrate including:
a substrate;
and the stress compensation functional layer is manufactured on the back surface of the substrate, wherein one surface of the stress compensation functional layer, which is far away from the substrate, is a curved surface.
In an option of the preferred embodiment of the present invention, a curved surface of the stress compensation functional layer is curved in a direction opposite to a warping direction of the substrate.
In an option of the preferred embodiment of the present invention, the stress compensation functional layer includes:
the first stress compensation layer is manufactured on the back surface of the substrate;
the second stress compensation layer is manufactured on one side, far away from the substrate, of the first stress compensation layer; the curved surface is the surface of the second stress compensation layer on the side far away from the first stress compensation layer.
In an option of the preferred embodiment of the present invention, the second stress compensation layer includes a first surface close to the first stress compensation layer, and a second surface far from the first stress compensation layer, and the second surface is recessed toward the first surface to form the curved surface.
In an option of the preferred embodiment of the present invention, the second stress compensation layer includes a first surface close to the first stress compensation layer, and a second surface far from the first stress compensation layer, and the second surface protrudes in a direction far from the first surface to form the curved surface.
In an option of the preferred embodiment of the present invention, the first stress compensation layer has a uniform layer thickness, and the thickness of the first stress compensation layer is less than or equal to 3 times the thickness of the substrate.
In an option of the preferred embodiment of the present invention, the first stress compensation layer and the second stress compensation layer are disposed concentrically with the substrate.
In an alternative preferred embodiment of the present invention, the degree of warp h of the curved surface is1Satisfy the requirement of
Wherein R is a radius of the substrate, R is a warp curvature radius of the substrate, hsIs the thickness of the substrate, t1Is the thickness of the first stress compensation layer.
In an option of the preferred embodiment of the invention, the difference between the equivalent thermal expansion coefficient C2 of the stress compensating functional layer and the thermal expansion coefficient C1 of the substrate is less than 45% C1.
In an option of the preferred embodiment of the invention, the difference between the equivalent lattice constant a2 of the stress compensating functional layer and the lattice constant a1 of the substrate is less than 50% a 1.
In another aspect, a preferred embodiment of the present invention further provides a method for manufacturing a composite substrate, including:
providing a substrate;
and manufacturing and forming a stress compensation functional layer based on the back surface of the substrate, so that one surface of the stress compensation layer, which is far away from the substrate, forms a curved surface.
In an option of a preferred embodiment of the present invention, the step of forming a stress compensation functional layer on the basis of the back side of the substrate includes:
a1, depositing an alumina film with a preset thickness on the back of the substrate;
step a2, depositing a hard mask on the surface of the side of the aluminum oxide film far away from the substrate;
a3, removing the middle part of the hard mask by a photoetching process to expose part of the surface of the alumina film, and etching the alumina film to a certain thickness from the exposed part of the surface;
repeating the step a3 at least once, and then removing the rest hard mask to enable the etched alumina film to form the stress compensation functional layer.
In an option of a preferred embodiment of the present invention, the step of forming a stress compensation functional layer on the basis of the back side of the substrate includes:
step c1, depositing an alumina film with a preset thickness on the back of the substrate;
step c2, depositing a hard mask on the surface of the side of the alumina film far away from the substrate;
step c3, removing the edge part of the hard mask through a photoetching process to expose part of the surface of the alumina film, and etching the alumina film to a certain thickness from the exposed part of the surface;
repeating the step c3 at least once, and then removing the rest hard mask to enable the etched alumina film to form the stress compensation functional layer.
In still another aspect, the preferred embodiment of the present invention further provides a semiconductor device, which includes the composite substrate described above.
Compared with the prior art, the composite substrate, the manufacturing method thereof and the semiconductor device provided by the invention have the advantages that the stress compensation function layer is added on the back surface of the substrate based on the in-situ monitoring warping data in the growth process, so that the substrate surface temperature is uniform when the epitaxial layers such as GaN and the like are grown based on the substrate, the parameter uniformity of the grown epitaxial layers is better, and the consistency of the performance parameters of the epitaxial layers is effectively ensured.
In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1(a) is a schematic cross-sectional view of a substrate in an unstrained state on a substrate.
FIG. 1(b) is a schematic cross-sectional view of the substrate when it is deformed by tensile stress when it grows on the substrate to reach the critical layer.
FIG. 1(c) is a schematic cross-sectional view of the substrate when it is deformed by compressive stress when it grows on the substrate to reach the critical layer.
Fig. 2 is a schematic cross-sectional structure diagram of a composite substrate according to an embodiment of the present invention.
Fig. 3 is a schematic cross-sectional view of a composite substrate according to an embodiment of the invention.
Fig. 4 is a schematic cross-sectional view of a composite substrate according to an embodiment of the invention.
Fig. 5 is a schematic cross-sectional view of a composite substrate according to an embodiment of the invention.
Fig. 6 is a schematic cross-sectional view of the composite substrate shown in fig. 4 deformed by tensile stress when grown on the base to reach the key layer.
Fig. 7 is a schematic cross-sectional view of the composite substrate shown in fig. 5 deformed by compressive stress when grown on a substrate to reach a critical layer.
Fig. 8 is a flow chart illustrating a method for manufacturing a composite substrate according to a preferred embodiment of the invention.
Fig. 9 is a sub-flowchart of step S2 shown in fig. 8.
Fig. 10 is a schematic cross-sectional structure of the composite substrate formed based on step a 1-step a2 shown in fig. 8.
Fig. 11 is a schematic cross-sectional structure of the composite substrate formed based on step a3 shown in fig. 8.
Fig. 12 is a top view of a composite substrate formed based on step a4 shown in fig. 8.
Fig. 13 is another sub-flowchart of step S2 shown in fig. 8.
Fig. 14 is a schematic cross-sectional structure of the composite substrate formed based on step c3 shown in fig. 13.
Icon: 10-a composite substrate; 11-a substrate; 12-a stress compensating functional layer; 120-a first stress compensation layer; 121-a second stress compensation layer; 122-a sapphire substrate; 123-alumina thin film; 124-hard mask; 13-curved surface; 20-matrix.
Detailed Description
First, the inventors have found that, in order to solve the problem of warpage of the substrate and the problem of uniformity of the epitaxial layer grown on the substrate, heteroepitaxy is mainly adopted, for example, an epitaxial layer such as GaN is grown on a sapphire substrate, a Si (silicon) substrate or a SiC (silicon carbide) substrate, but the epitaxial layer such as GaN is often grown by using a metal organic chemical vapor deposition technique in combination with a high temperature. However, during the high temperature growth process, as shown in fig. 1(a), the substrate 11 has a thermal mismatch and a lattice mismatch to generate a stress (e.g. compressive stress or tensile stress) which causes the substrate 11 to have a warpage phenomenon as shown in fig. 1(b) or fig. 1(c), and the warpage phenomenon may cause the central portion of the epitaxial layer to be closer to (or farther from) the surface of the substrate 20 (e.g. graphite disk) than the edge when the critical layer (e.g. barrier layer) is grown subsequently, so that the temperature of the central portion of the epitaxial layer is higher (or lower) than that of the edge portion, and finally cause the thickness of the central portion of the epitaxial layer after the critical layer is grown to be thinner (or thicker) than that of the edge portion, especially when the epitaxial layer is grown in a large size, due to the larger area of the epitaxial layer, the thickness difference between the central portion and the edge portion of the epitaxial layer is aggravated, so that the, the thickness uniformity directly affects the subsequent chip yield and the sorting cost. Note that h shown in fig. 1(b) and 1(c) indicates a warp height of the substrate 11 when subjected to compressive stress or tensile stress during growth.
In view of the above, embodiments of the present invention provide a composite substrate 10, a method for manufacturing the same, and a semiconductor device to effectively solve the foregoing problems. In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. In the description of the invention, the terms first, second, third, fourth, etc. are used only for distinguishing between descriptions and are not intended to be construed as limiting or implying only relative importance.
In the description of the present invention, unless otherwise expressly specified or limited, the terms "disposed," "connected," and "connected" are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
As shown in fig. 2, a schematic cross-sectional structure of a composite substrate 10 provided in an embodiment of the present invention is a schematic cross-sectional structure of the composite substrate 10, where the composite substrate 10 includes a substrate 11 and a stress compensation functional layer 12 fabricated on a back surface of the substrate 11, where one surface of the stress compensation functional layer 12 away from the substrate 11 is a curved surface 13, so that in a growth process of an epitaxial layer, the substrate 11 with a warpage phenomenon can be in contact with a base 20 (such as a graphite disc) through the stress compensation functional layer 12, thereby avoiding problems of thermal mismatch and lattice mismatch between the substrate 11 and the epitaxial layer, and ensuring that a temperature of the epitaxial layer is uniform and performance parameters are consistent when the substrate 11 is deformed by a force. The back surface of the substrate 11 refers to a surface of the substrate 11 close to the base 20.
In practical implementation, the substrate 11 may be, but is not limited to, one of a single crystal silicon substrate, a sapphire substrate or a SiC single crystal substrate, and the stress compensation functional layer 12 may be one of an aluminum nitride (AlN) material layer, an aluminum oxide material layer or a silicon carbide (SiC) material layer. Alternatively, in this embodiment, the material of the stress compensation functional layer 12 may also be different according to the material forming the substrate 11, for example, when the substrate 11 is a sapphire substrate, the stress compensation functional layer 12 may be an alumina film; alternatively, when the substrate 11 is a silicon carbide substrate, the stress compensation functional layer 12 may be an aluminum nitride film. In addition, the difference between the equivalent thermal expansion coefficient C2 of the stress compensating functional layer 12 and the thermal expansion coefficient C1 of the substrate 11 is less than 45% C1, optionally the difference between C1 and C2 is less than or equal to 20% C1, preferably the difference between C1 and C2 is less than or equal to 9% C1. The difference between the equivalent lattice constant a2 of the stress compensating functional layer 12 and the lattice constant a1 of the substrate 11 is less than 50% a1, optionally the difference between a1 and a2 is less than or equal to 25% a1, preferably the difference between a1 and a2 is less than or equal to 10% a 1.
Further, the structure of the curved surface 13 on the stress compensation functional layer 12 is different according to the stress to which the substrate 11 is subjected during the growth process, for example, when the substrate 11 is subjected to tensile stress in the subsequent process, the curved surface 13 on the composite substrate 10 may be made as shown in fig. 2, but when the substrate 11 is subjected to compressive stress in the subsequent process, the curved surface 13 on the composite substrate 10 may be made as shown in fig. 3. In addition, the stress compensation functional layer 12 in the composite substrate 10 shown in fig. 2 and 3 is different according to different actual requirements, for example, the stress compensation functional layer 12 may be deposited by using the same material and performing one process as shown in fig. 2 or 3, or may be deposited by using two processes as shown in fig. 4 or 5 based on different or the same materials.
For example, when the stress compensation functional layer 12 is formed by two deposition processes based on different or the same materials as shown in fig. 4 or fig. 5, the stress compensation functional layer 12 may include a first stress compensation layer 120 and a second stress compensation layer 121, the first stress compensation layer 120 is formed on the back surface of the substrate 11, and the second stress compensation layer 121 is formed on the side of the first stress compensation layer 120 away from the substrate 11; the curved surface 13 is a surface of the second stress compensation layer 121 on a side away from the first stress compensation layer 120. In this embodiment, the first stress compensation layer 120 is used for reducing the warpage of the substrate 11 through stress compensation, and the thickness of the first stress compensation layer 120 is uniform. The second stress compensation layer 121 is used to ensure that the substrate 11 can be in surface contact with the base 20 when the substrate 11 is bent, and to make the surface temperature of the substrate 11 uniform through thermal conduction.
In detail, as an embodiment, referring to fig. 4 again, the second stress compensation layer 121 may include a first surface close to the first stress compensation layer 120, and a second surface far from the first stress compensation layer 120, and the second surface is recessed toward the first surface to form the curved surface 13. In practical implementation, when the substrate 11 shown in fig. 4 is subjected to tensile stress when grown on the base 20 to reach the critical layer and the state shown in fig. 6 occurs, the composite substrate 10 shown in fig. 4 can be contacted with the base 20 through the curved surface 13 on the second stress compensation layer 121 when the substrate 11 is subjected to tensile stress and deformed, thereby ensuring that the surface temperature of the composite substrate 10 is uniform through heat conduction. I.e. the direction of curvature of the second side of the second stress compensation layer 121 is opposite to the direction of warpage of said substrate 11.
In another embodiment, referring to fig. 5 again, the second stress compensation layer 121 includes a first surface close to the first stress compensation layer 120 and a second surface far from the first stress compensation layer 120, and the second surface protrudes in a direction far from the first surface to form the curved surface 13. In practical implementation, when the substrate 11 shown in fig. 5 is deformed by compressive stress when it is grown on the base 20 to reach the critical layer, the state shown in fig. 7 occurs, that is, when the composite substrate 10 shown in fig. 5 is deformed by compressive stress, the composite substrate is in contact with the base 20 through the curved surface 13 on the second stress compensation layer 121, and thus the surface temperature of the composite substrate 10 is ensured to be consistent through heat conduction.
Further, in the design of the first stress compensation layer 120 and the second stress compensation layer 121, the thickness of the first stress compensation layer 120 should be less than or equal to 3 times the thickness of the substrate 11, so as to ensure that the peeling-off is not generated. In the present embodiment, it is preferable that it is raw-basedAnd designing the layer thickness of the first stress compensation layer 120 and the warping degree of the second stress compensation layer 121 according to the in-situ monitoring warping data of the substrate 11 which is not designed with the stress compensation functional layer 12 in a long process. Specifically, first, the average stress σ that is received when an epitaxial layer is grown on the basis of the substrate 11 not designed with the stress compensation functional layer 12, that is, the average stress σ can be calculated according to the Stoney formula
Wherein M issIs the biaxial modulus, h, of the substrate 11fP is the curvature of warpage of the substrate 11, h is the thickness of the epitaxial layersIs the thickness of the substrate 11. Secondly, the thickness t of the first stress compensation layer 120 can be calculated based on the average stress sigma1And is and
therefore, preferably, the thickness t of the first stress compensation layer 1201Satisfy the requirement of
Where R is a radius of the substrate 11, and R is a warp curvature radius of the substrate 11. When calculating the warpage of the second stress compensation layer 121, the following three cases can be divided, specifically as follows:
(1) when the thickness of the first stress compensation layer 120 is 0, the warpage of the second stress compensation layer 121 can be calculated according to the warpage height monitored when the substrate 11 grows to a critical layer (such as a barrier layer). Specifically, the substrate 11 may be warped as shown in fig. 1(b) or 1(c) due to the compressive stress or the tensile stress during the growth process, wherein the warp height h of the substrate 11 can pass through
Calculated, R is the radius of the substrate 11, R is the warp curvature radius of the substrate 11, and the curvature ρ of the substrate 11, i.e. the curvature ρ of the substrate 11, can be measured by in-situ warp monitoring during the growth process
Then calculating the warping height h according to rho, namely
(2) When the thickness of the first stress compensation layer 120 is sufficiently thick, the warpage of the second stress compensation layer 121 becomes small (approximately 0).
(3) When the thickness t of the first stress compensation layer 120 is1Satisfy the requirement of
The warp h of the second stress compensation layer 1211Can be according to the formula
Calculated, wherein R is the radius of the substrate 11, R is the warp curvature radius of the substrate 11, hsIs the thickness, t, of the substrate 111Is the thickness of the first stress compensation layer 120.
In addition, in practical implementation, when the second stress compensation layer 121 is designed, the warp curvature radius R of the substrate 11 can be calculated1I.e. by
Wherein R is a radius of the substrate 11, R is a warp curvature radius of the substrate 11, hsIs the thickness, t, of the substrate 111Is the thickness of the first stress compensation layer 120.
It should be noted that the material of the first stress compensation layer 120 may be selected to be close to the thermal expansion coefficient of the substrate 11 and stable at high temperature, and the material of the second stress compensation layer 121 may be selected to be the same as the material of the first stress compensation layer 120 or different from the material of the first stress compensation layer 120, as long as the requirements of stability at high temperature and good thermal conductivity can be satisfied. In addition, the cross section of the composite substrate 10 according to this embodiment may be, but is not limited to, a circular structure, for example, the first stress compensation layer 120, the second stress compensation layer 121 and the substrate 11 may be concentrically disposed, so as to further ensure lattice matching among the substrate 11, the first stress compensation layer 120 and the second stress compensation layer 121, and improve the yield of semiconductor devices fabricated based on the composite substrate 10.
Further, as shown in fig. 8, an embodiment of the present invention further provides a method for manufacturing a composite substrate 10, and the method for manufacturing the composite substrate 10 is described below with reference to fig. 8.
Step S1, providing a substrate 11;
step S2 is to form a stress compensation functional layer 12 on the back surface of the substrate 11, and form a curved surface 13 on the surface of the stress compensation layer away from the substrate 11.
The composite substrate 10 manufactured and formed based on the manufacturing method of the composite substrate 10 given in the above-described step S1-step S2 may be as shown in fig. 2 or fig. 3, and the embodiment is not limited thereto. In addition, the substrate 11 and the stress compensation functional layer 12 may be formed by, but not limited to, a CVD (Chemical Vapor Deposition) method, a PVD (Physical Vapor Deposition) method. Wherein, the substrate 11 may be but is not limited to one of a crystalline silicon substrate 11, a sapphire substrate 122 or a SiC single crystal substrate 11, and the stress compensation function layer 12 may be one of an aluminum nitride (AlN) material layer, an aluminum oxide material layer or a silicon carbide (SiC) material layer.
In detail, as shown in fig. 10, when the substrate 11 is a sapphire substrate 122 and the stress compensation functional layer 12 is an alumina thin film 123, the step S2 can be implemented by the steps a 1-a 4 shown in fig. 9 or the steps c1-c 4 shown in fig. 13, wherein the composite substrate 10 shown in fig. 2 can be formed by the steps a 1-a 4, that is, the curved surface 13 on the stress compensation functional layer 12 is a concave surface, so as to solve the warpage problem of the substrate 11 when it is subjected to tensile stress, which is as follows.
Step a1, depositing an alumina film 123 with a preset thickness on the back of the sapphire substrate 122;
step a2, depositing a hard mask 124 on the surface of the side of the alumina film 123 far away from the sapphire substrate 122;
a3, removing the middle part of the hard mask 124 by a photolithography process to expose a part of the surface of the alumina thin film 123, and etching the alumina thin film 123 to a certain thickness from the exposed part of the surface;
step a4, repeating step a3 at least once, and then removing the remaining hard mask 124, so that the etched alumina film 123 forms the stress compensation functional layer 12.
In detail, the preset thickness may be set based on in-situ monitored warpage data of the substrate 11 not provided with the stress compensation functional layer 12 during the growth process, and specifically, the calculation process of the thickness of the first stress compensation layer 120 and the warpage of the second stress compensation layer 121 may be referred to above, which is not described herein again.
Further, after the deposition of the hard mask 124 in step a2 is completed, a schematic cross-sectional structure as shown in fig. 9 can be obtained, wherein, when the deposition of the hard mask 124 is performed, a CVD deposition process or a PVD deposition process can be used, but not limited to, and the hard mask 124 can be made of TiN (titanium nitride), Ni (nickel), or Au (gold), depending on the material used for the stress compensation functional layer 12.
In addition, the hard mask 124 and the alumina thin film 123 may be etched once in step a3 to obtain a schematic cross-sectional structure as shown in fig. 10, and the hard mask 124 and the alumina thin film 123 may be etched multiple times in step a4 to obtain a top view as shown in fig. 11.
It should be noted that, when the etching of the alumina thin film 123 is performed in step a3 and step a4 to form the stress compensation functional layer 12 with the curved surface 13, the etching may be performed based on step a3 and repeated etching is performed to form the pattern of the stress compensation functional layer 12 as shown in fig. 2, for example, the pattern of the stress compensation functional layer 12 shown in fig. 2 may also be formed based on one etching process, and the present embodiment is not limited thereto.
Further, unlike the step a 1-the step a4, the composite substrate 10 manufactured and formed based on the step c 1-the step c4 is shown in fig. 3, and the curved surface 13 on the stress compensation functional layer 12 is convex, so as to solve the warpage problem of the substrate 11 when the substrate is subjected to compressive stress, which is described in detail as follows.
Step c1, depositing an alumina film 123 with a preset thickness on the back of the sapphire substrate 122;
step c2, depositing a hard mask 124 on the surface of the side of the alumina film 123 far away from the sapphire substrate 122;
step c3, removing the edge part of the hard mask 124 by photolithography to expose part of the surface of the alumina thin film 123, and etching the alumina thin film 123 to a certain thickness from the exposed part of the surface;
repeating the step c3 at least once, and then removing the remaining hard mask 124, so that the etched alumina thin film 123 forms the stress compensation functional layer 12.
In detail, with respect to the steps c1-c2, reference may be made to the detailed description of the steps a 1-a 2, and the detailed description of this embodiment is omitted here. However, in the steps c 3-c 4, when etching the hard mask 124 plate and the aluminum oxide film 123, it is necessary to start etching from the edge positions of the hard mask 124 plate and the aluminum oxide film 123, that is, after completing one etching of the hard mask 124 and the aluminum oxide film 123 in step c3, a schematic cross-sectional structure as shown in fig. 12 can be obtained.
It should be noted that, in the manufacturing process of the stress compensation functional layer 12 given in steps a 1-a 4 and c1-c 4, a layer with a thickness t may be deposited on one side of the sapphire substrate 1221The alumina film 123 is used as the first stress compensation functional layer 12, and then a layer with the thickness h is deposited on the side of the first stress compensation layer 120 far away from the substrate 111And etching the aluminum oxide thin film 123 to form the second stress compensation layer 121, wherein the thickness is h1The process of etching the aluminum oxide film 123 to form the second stress compensation layer 121 can refer to the above step a 2-step a4 or step c 2-step c4The embodiments are not described in detail herein.
In practical implementation, for the sapphire substrate 122 with low cost, the sapphire substrate 122 may be thickened to a certain thickness, and then the back surface of the sapphire substrate 122 is directly etched to form a concave surface or a convex surface, which may also achieve the effect of improving uniformity, but may affect the subsequent chip processing technology.
Further, as another embodiment, when the substrate 11 is a silicon carbide substrate and the stress compensation functional layer 12 is an aluminum nitride film, the step S2 can be realized by the following steps b1 to b4 or steps d1 to d 4.
Step b1, depositing an aluminum nitride film 126 with a preset thickness on the back of the silicon carbide substrate;
step b2, depositing a hard mask 124 on the surface of the side of the aluminum nitride film 126 away from the silicon carbide substrate;
b3, removing the middle part of the hard mask 124 by a photoetching process to expose a part of the surface of the aluminum nitride film 126, and etching the aluminum nitride film 126 to a certain thickness from the exposed part of the surface;
repeating the step b3 at least once, and then removing the remaining hard mask 124, so that the etched aluminum nitride film 126 forms the stress compensation functional layer 12.
D1, depositing an aluminum nitride film 126 with a preset thickness on the back of the silicon carbide substrate;
d2, depositing a hard mask 124 on the surface of the aluminum nitride film 126 far away from the silicon carbide substrate;
d3, removing the middle part of the hard mask 124 by photolithography to expose a part of the surface of the aluminum nitride film 126, and etching the aluminum nitride film 126 to a certain thickness from the exposed part of the surface;
repeating the step d3 at least once, and then removing the remaining hard mask 124 to form the stress compensation functional layer 12 on the etched aluminum nitride film 126.
In detail, the fabrication process of the step b 1-the step b4 is similar to the step a 1-the step a4, and the composite substrate 10 shown in fig. 2 can be fabricated through the step b 1-the step b4, that is, the curved surface 13 on the stress compensation functional layer 12 is a concave surface, so as to solve the warpage problem of the substrate 11 when it is subjected to tensile stress. The manufacturing process of the step d 1-the step d4 is similar to the step c 1-the step c4, and the composite substrate 10 shown in fig. 3 can be manufactured through the step d 1-the step d4, that is, the curved surface 13 on the stress compensation functional layer 12 is a convex surface, so as to solve the warpage problem occurring when the substrate 11 is subjected to compressive stress, and therefore, the detailed description of the step b 1-the step b4 and the step d 1-the step d4 can be referred to the detailed description of the step a 1-the step a4 or the step c 1-the step c4, and the detailed description of this embodiment is not repeated herein.
Further, based on the description of the composite substrate 10 and the method for manufacturing the composite substrate 10, an embodiment of the present invention further provides a semiconductor device, which includes the composite substrate 10. It is understood that, since the semiconductor device has the same or corresponding technical features as the composite substrate 10, reference may be made to the above detailed description of the composite substrate 10 for the description of the semiconductor device, and the description of the embodiment is not repeated herein.
In summary, according to the composite substrate 10, the manufacturing method thereof and the semiconductor device provided by the invention, the stress compensation functional layer 12 is added on the back surface of the substrate 11 based on the in-situ monitoring warpage data in the growth process, so that the surface temperature of the substrate 11 is more uniform when the epitaxial layers such as GaN are grown based on the composite substrate 10, the uniformity of the parameters of the grown epitaxial layers is better, and the consistency of the performance parameters of the epitaxial layers is effectively ensured.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (14)
1. A composite substrate for use in a semiconductor device, the composite substrate comprising:
a substrate;
and the stress compensation functional layer is manufactured on the back surface of the substrate, wherein one surface of the stress compensation functional layer, which is far away from the substrate, is a curved surface.
2. The composite substrate according to claim 1, wherein the curved surface of the stress compensation functional layer is curved in a direction opposite to a warp direction of the substrate.
3. The composite substrate of claim 1, wherein the stress-compensating functional layer comprises:
the first stress compensation layer is manufactured on the back surface of the substrate;
the second stress compensation layer is manufactured on one side, far away from the substrate, of the first stress compensation layer; the curved surface is the surface of the second stress compensation layer on the side far away from the first stress compensation layer.
4. The composite substrate of claim 3, wherein the second stress compensation layer comprises a first side proximate to the first stress compensation layer and a second side distal from the first stress compensation layer, the second side being recessed in a direction toward the first side to form the curved surface.
5. The composite substrate of claim 3, wherein the second stress compensation layer comprises a first side proximate to the first stress compensation layer and a second side distal from the first stress compensation layer, the second side being convex in a direction away from the first side to form the curved surface.
6. The composite substrate of claim 3, wherein the first stress compensation layer has a uniform layer thickness and the thickness of the first stress compensation layer is 3 times or less the substrate thickness.
7. The composite substrate of claim 3, wherein the first stress compensation layer and the second stress compensation layer are disposed concentrically with the substrate.
8. The composite substrate of any of claims 3-7, wherein the curvature h of the curved surface is warp1Satisfy the requirement of
Wherein R is a radius of the substrate, R is a warp curvature radius of the substrate, hsIs the thickness of the substrate, t1Is the thickness of the first stress compensation layer.
9. The composite substrate according to any of claims 1 to 7, wherein the difference between the equivalent coefficient of thermal expansion C2 of the stress compensating functional layer and the coefficient of thermal expansion C1 of the substrate is less than 45% C1.
10. The composite substrate according to any of claims 1 to 7, wherein the difference between the equivalent lattice constant A2 of the stress compensation functional layer and the lattice constant A1 of the substrate is less than 50% A1.
11. A method of fabricating a composite substrate, comprising:
providing a substrate;
and manufacturing and forming a stress compensation functional layer based on the back surface of the substrate, so that one surface of the stress compensation layer, which is far away from the substrate, forms a curved surface.
12. The method for manufacturing a composite substrate according to claim 11, wherein the step of forming a stress compensation functional layer based on the back side of the substrate includes:
a1, depositing an alumina film with a preset thickness on the back of the substrate;
step a2, depositing a hard mask on the surface of the side of the aluminum oxide film far away from the substrate;
a3, removing the middle part of the hard mask by a photoetching process to expose part of the surface of the alumina film, and etching the alumina film to a certain thickness from the exposed part of the surface;
repeating the step a3 at least once, and then removing the rest hard mask to enable the etched alumina film to form the stress compensation functional layer.
13. The method for manufacturing a composite substrate according to claim 11, wherein the step of forming a stress compensation functional layer based on the back side of the substrate includes:
step c1, depositing an alumina film with a preset thickness on the back of the substrate;
step c2, depositing a hard mask on the surface of the side of the alumina film far away from the substrate;
step c3, removing the edge part of the hard mask through a photoetching process to expose part of the surface of the alumina film, and etching the alumina film to a certain thickness from the exposed part of the surface;
repeating the step c3 at least once, and then removing the rest hard mask to enable the etched alumina film to form the stress compensation functional layer.
14. A semiconductor device comprising the composite substrate of any one of claims 1-10.
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| CN113965031A (en) * | 2021-11-02 | 2022-01-21 | 江苏联博精密科技有限公司 | Welding tool with stress compensation function for stator |
| CN114759126A (en) * | 2022-06-13 | 2022-07-15 | 江苏第三代半导体研究院有限公司 | Semiconductor device structure based on nitride single crystal substrate and preparation method thereof |
| WO2023109866A1 (en) * | 2021-12-15 | 2023-06-22 | 苏州能讯高能半导体有限公司 | Epitaxial structure of semiconductor device, preparation method for epitaxial structure, and semiconductor device |
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| WO2023109866A1 (en) * | 2021-12-15 | 2023-06-22 | 苏州能讯高能半导体有限公司 | Epitaxial structure of semiconductor device, preparation method for epitaxial structure, and semiconductor device |
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