CN216698312U - Graphite plate for growing LED epitaxial wafer - Google Patents
Graphite plate for growing LED epitaxial wafer Download PDFInfo
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- CN216698312U CN216698312U CN202122909254.3U CN202122909254U CN216698312U CN 216698312 U CN216698312 U CN 216698312U CN 202122909254 U CN202122909254 U CN 202122909254U CN 216698312 U CN216698312 U CN 216698312U
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Abstract
The utility model discloses a graphite plate for growing LED epitaxial wafers, which comprises a graphite plate body and a plurality of substrate grooves, wherein the graphite plate body is provided with a plurality of grooves; the inner circle and the outer circle of the substrate grooves are uniformly distributed on the graphite disc body, and the positions of the inner circle and the outer circle correspond to the positions of heating wires of a heating system; the substrate groove is circular and the groove depth is 660-680 mu m. According to the utility model, the inner and outer circles of substrate grooves are distributed on the graphite plate, so that the three-circle distribution mode of the substrate grooves on the existing graphite plate is replaced, the positions of the two circles of heating wires of the heating system below the graphite plate are matched well, and the depth of the substrate grooves is optimized and selected to be 660-680um, so that the contact benefit of the wafer and the edge is further reduced, and the uniformity of the wavelength standard deviation is greatly improved.
Description
Technical Field
The utility model relates to the technical field of semiconductor material growth equipment, in particular to a graphite plate for growing an LED epitaxial wafer.
Background
A Light Emitting Diode (LED) is a solid semiconductor Diode Light Emitting device and is widely used in the field of illumination such as indicator lights and display screens. The method for manufacturing the LED wafer at the present stage is mainly realized by Metal-organic Chemical Vapor Deposition (MOCVD), a wafer carrier in MOCVD is usually a graphite disc, and the flow can be briefly described as follows: and placing the substrate on the groove of the graphite disc, placing the graphite disc loaded with the substrate in an MOCVD reaction chamber, heating the reaction chamber to a preset temperature, and introducing organic metal compounds and IV group gases in a matching manner to break chemical bonds on the substrate and repolymerize to form an LED epitaxial layer.
The graphite plate is an important accessory in MOCVD equipment, the graphite plate commonly used at present is round, and a plurality of round grooves are distributed on the graphite plate and used for placing substrates. The graphite plate is made of high-purity graphite and is coated with a SiC coating on the surface. In the epitaxial growth process, a graphite plate containing a substrate is subjected to radiation heating through a heating wire in a reaction chamber of MOCVD (metal organic chemical vapor deposition), and the temperature is controlled by a thermocouple and a temperature controller, so that the temperature control precision can generally reach 0.2 ℃ or lower.
At present, most of the substrate materials used by most companies for growing III-V nitride light-emitting devices are sapphire (Al)2O3) Substrates, a few companies use SiC substrates and Si substrates. Due to the Si substrate and sapphire (Al)2O3) Due to the difference between the lattice mismatch and the thermal expansion coefficient between the substrate and the III-V nitride epitaxial layer, the epitaxial wafer is warped during the epitaxial growth process, but the warping phenomena of the epitaxial wafer and the epitaxial wafer are different. The warping of the epitaxial wafer causes uneven heating of the wafer, which affects the quality of the epitaxial layer, and the wavelength of the III-V nitride luminescent epitaxial wafer is sensitive to temperature, which easily causes epitaxyThe large difference of the wavelength in the chip can cause great increase of time and cost and reduction of yield for subsequent chip manufacturing process and sorting work, and is especially more obvious in the aspect of application of Mini-LED and Micro-LED. Therefore, it is necessary to design a graphite plate capable of greatly improving the wavelength uniformity in the epitaxial wafer.
SUMMERY OF THE UTILITY MODEL
The technical problem to be solved by the utility model is as follows: the graphite disc for growing the Mini-LED or Micro-LED epitaxial wafer is provided, and the wavelength uniformity in the epitaxial wafer is effectively improved.
In order to solve the technical problems, the utility model adopts the technical scheme that:
a graphite disc for growing Mini-LED or Micro-LED epitaxial wafers comprises a graphite disc body and a plurality of substrate grooves;
the inner circle and the outer circle of the plurality of substrate grooves are uniformly distributed on the graphite disc body, and the positions of the inner circle and the outer circle correspond to the positions of heating wires of a heating system;
the substrate groove is circular and the groove depth is 660-680 mu m.
Further, the number of the substrate grooves is 23;
7 substrate grooves close to the inner ring in the middle of the graphite disc body;
the number of the substrate grooves far away from the outer ring in the middle of the graphite disc body is 16.
Further, the diameter of the inner ring close to the middle part of the graphite disc body is 244 mm;
the diameter of the outer ring close to the middle part of the graphite disc body is 537.19 mm.
Further, the diameter of the substrate groove was 100.81 mm.
Further, the graphite disc body is circular.
Further, the graphite disc body has a diameter of 695mm, 705mm or 715 mm.
The utility model has the beneficial effects that: the utility model provides a graphite disc for growing Mini-LED or Micro-LED epitaxial wafers, which is characterized in that the temperature field of a heating system is well matched by replacing the three-circle distribution mode of the substrate grooves on the conventional graphite disc by the inner and outer substrate groove distribution and corresponding to the positions of two circles of heating wires of the heating system below a graphite plate, and the depth of the substrate grooves is optimized and selected to be 660-680um, so that the contact benefit of a wafer and an edge is further reduced, and the uniformity of the wavelength standard deviation is greatly improved.
Drawings
FIG. 1 is a structural diagram of a conventional graphite disk;
FIG. 2 is a structural diagram of a graphite disk for growing Mini-LED or Micro-LED epitaxial wafers according to an embodiment of the present invention;
fig. 3 is a schematic side cross-sectional view of a graphite disk for growing Mini-LED or Micro-LED epitaxial wafers according to an embodiment of the present invention.
Description of reference numerals:
1. a graphite plate body; 2. a substrate tank.
Detailed Description
In order to explain technical contents, achieved objects, and effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments.
Referring to fig. 2 and 3, a graphite disk for growing a Mini-LED or Micro-LED epitaxial wafer includes a graphite disk body and a plurality of substrate grooves;
the inner circle and the outer circle of the plurality of substrate grooves are uniformly distributed on the graphite disc body, and the positions of the inner circle and the outer circle correspond to the positions of heating wires of a heating system;
the substrate groove is circular and the groove depth is 660-680 mu m.
As can be seen from the above description, the beneficial effects of the present invention are: the inner and outer rings of substrate grooves are distributed to replace the three-ring distribution mode of the substrate grooves on the existing graphite plate, the positions of the two rings of heating wires of the heating system below the graphite plate are matched well, and in addition, the depth of the substrate grooves is optimized and selected to be 660-680 microns, so that the contact benefit of the wafer and the edge is further reduced, and the uniformity of the wavelength standard deviation is greatly improved.
Further, the number of the substrate grooves is 23;
7 substrate grooves close to the inner ring in the middle of the graphite disc body;
the number of the substrate grooves far away from the outer ring in the middle of the graphite disc body is 16.
According to the description, the substrate grooves with the limited number are adopted, the outer rings are 16, the inner rings are 7, the requirement of intelligently taking LED wafers in batches is met, meanwhile, the temperature field of a heating system is further adapted, the contact benefit of the wafers and the edges is reduced, and the uniformity of the wavelength standard deviation is greatly improved.
Further, the diameter of the inner ring close to the middle part of the graphite disc body is 244 mm;
the diameter of the outer ring close to the middle part of the graphite disc body is 537.19 mm.
As can be seen from the above description, the diameters of the inner and outer rings of substrate slots distributed on the graphite disk are set to ensure that the outer ring meets the uniform distribution of 16 substrate slots and the inner ring meets the distribution of 7 substrate slots.
Further, the diameter of the substrate groove was 100.81 mm.
From the above description, it can be seen that the diameter of the substrate slot is set to 100.81mm, which is slightly larger than the conventional 100.71mm diameter substrate slot to further reduce the wafer-to-edge contact efficiency.
Further, the graphite disc body is circular.
According to the description, the circular graphite plate can be better matched with the temperature field of the heating system, and the heating uniformity of the substrate groove on the graphite plate is further improved.
Further, the graphite disc body has a diameter of 695mm, 705mm or 715 mm.
As can be seen from the above description, to meet the needs of most sizes of graphite disks.
Referring to fig. 1 to fig. 3, a first embodiment of the present invention is:
fig. 1 shows a conventional graphite disc for producing a Mini-LED or Micro-LED epitaxial wafer, wherein a graphite disc body 1 is provided with three circles of substrate grooves 2, the depth of each substrate groove 2 is generally 760-780 μm, the current wavelength STD (standard deviation) level of the design preferably can be 1.3-1.5, the requirements of the Mini-LED or Micro-LED cannot be met, and the epitaxial wafer is easily warped to cause uneven heating of the wafer on the substrate grooves 2.
In view of the above problems, the present embodiment provides a graphite disk for growing Mini-LED or Micro-LED epitaxial wafers, which includes a graphite disk body 1 and a plurality of substrate grooves 2.
As shown in fig. 2, in this embodiment, a plurality of substrate slots 2 are inside and outside two rings of evenly distributed on graphite plate body 1, in this embodiment, substrate slots 2 are circular and the setting position of inside and outside two rings is corresponding with heating system's heater strip position, correspond the position of the two rings of heater strips of heating system of graphite plate below promptly, compare in the mode that adopts three rings of substrate slots 2 to distribute on current graphite plate body 1 in fig. 1, the temperature field of the matching heating system that can be better, improve the homogeneity of being heated of substrate slots 2 on the graphite plate.
Meanwhile, as shown in fig. 3, in the embodiment, the depth of the substrate groove 2 is 680 μm, and a 10 μm margin is left downward in the inner ring of the substrate groove 2, which can further reduce the benefit of wafer-edge contact, so that the uniformity of the wavelength STD is greatly improved to 0.8-1. In other equivalent embodiments, the depth of the substrate trench 2 is preferably 660 to 680 μm.
Referring to fig. 2, the second embodiment of the present invention is:
on the basis of the first embodiment, in the first embodiment, 23 substrate grooves 2 are provided, wherein 7 inner ring substrate grooves 2 are provided near the middle of the graphite disc body 1, and 16 outer ring substrate grooves 2 are provided far from the middle of the graphite disc body 1. Namely, the substrate grooves 2 with limited quantity are adopted to meet the requirement of batch preparation of LED wafers, and meanwhile, the temperature field of a heating system is further adapted, the contact benefit of the wafer and the edge is reduced, and the uniformity of the wavelength standard deviation is greatly improved.
Meanwhile, in order to satisfy the above-described number distribution of the inner and outer rings of substrate grooves 2, as shown in fig. 2, the diameter of the inner ring near the middle of the graphite disk body 1 is defined to be 244mm, and the diameter of the outer ring near the middle of the graphite disk body 1 is defined to be 537.19mm, so as to ensure that the outer ring and the inner ring satisfy the uniform distribution of 16 and 7 substrate grooves 2, respectively.
As shown in fig. 2, in the present embodiment, the diameter of the substrate groove 2 is set to 100.81mm, which is slightly larger than the conventional substrate groove 2 with a diameter of 100.71mm, so as to further reduce the benefit of the wafer contacting the edge.
In addition, in this embodiment, the graphite plate body 1 is in a circular shape with a diameter of 695mm, 705mm or 715mm, so that the requirement of graphite plates with most sizes is met, the temperature field of a heating system can be better matched, and the heating uniformity of the substrate slots 2 on the graphite plate is further improved.
In summary, according to the graphite disk for growing the Mini-LED or Micro-LED epitaxial wafer provided by the utility model, the inner circle and the outer circle of substrate grooves are distributed on the graphite disk, the temperature field of the heating system is well matched, the optimized depth is 660-680 mu m, the wavelength STD uniformity of the epitaxial wafer can be 0.8-1, the contact benefit of the wafer and the edge is further reduced, the wavelength standard deviation uniformity is greatly improved, the growth benefit of the Mini-LEDMicro-LED epitaxial wafer is improved, and the price of the epitaxial wafer prepared by the method is improved by about 50% compared with that of a normal epitaxial wafer.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent changes made by using the contents of the present specification and the drawings, or applied directly or indirectly to the related technical fields, are included in the scope of the present invention.
Claims (6)
1. A graphite disc for growing Mini-LED or Micro-LED epitaxial wafers is characterized by comprising a graphite disc body and a plurality of substrate grooves;
the inner circle and the outer circle of the plurality of substrate grooves are uniformly distributed on the graphite disc body, and the positions of the inner circle and the outer circle correspond to the positions of heating wires of a heating system;
the substrate groove is circular and the groove depth is 660-680 mu m.
2. The graphite disc for growing Mini-LED or Micro-LED epitaxial wafers of claim 1, wherein the number of substrate grooves is 23;
7 substrate grooves close to the inner ring in the middle of the graphite disc body;
the number of the substrate grooves far away from the outer ring in the middle of the graphite disc body is 16.
3. The graphite disk for growing Mini-LED or Micro-LED epitaxial wafers according to claim 2, wherein the inner circle near the middle of the graphite disk body has a diameter of 244 mm;
the diameter of the outer ring close to the middle part of the graphite disc body is 537.19 mm.
4. A graphite disk for growing Mini-LED or Micro-LED epitaxial wafers according to claim 2 wherein the substrate grooves have a diameter of 100.81 mm.
5. The graphite disc for growing the Mini-LED or the Micro-LED epitaxial wafers according to claim 1, wherein the graphite disc body is circular.
6. The graphite disk for growing Mini-LED or Micro-LED epitaxial wafers according to claim 5, wherein the graphite disk body has a diameter of 695mm, 705mm or 715 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122909254.3U CN216698312U (en) | 2021-11-25 | 2021-11-25 | Graphite plate for growing LED epitaxial wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122909254.3U CN216698312U (en) | 2021-11-25 | 2021-11-25 | Graphite plate for growing LED epitaxial wafer |
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| Publication Number | Publication Date |
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| CN216698312U true CN216698312U (en) | 2022-06-07 |
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| CN202122909254.3U Active CN216698312U (en) | 2021-11-25 | 2021-11-25 | Graphite plate for growing LED epitaxial wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115323485A (en) * | 2022-08-18 | 2022-11-11 | 江西兆驰半导体有限公司 | Epitaxial wavelength uniformity improving method and system, readable storage medium and computer |
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2021
- 2021-11-25 CN CN202122909254.3U patent/CN216698312U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115323485A (en) * | 2022-08-18 | 2022-11-11 | 江西兆驰半导体有限公司 | Epitaxial wavelength uniformity improving method and system, readable storage medium and computer |
| CN115323485B (en) * | 2022-08-18 | 2023-08-01 | 江西兆驰半导体有限公司 | Epitaxial wavelength uniformity improving method, epitaxial wavelength uniformity improving system, readable storage medium and computer |
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