CN115323485B - Epitaxial wavelength uniformity improving method, epitaxial wavelength uniformity improving system, readable storage medium and computer - Google Patents
Epitaxial wavelength uniformity improving method, epitaxial wavelength uniformity improving system, readable storage medium and computer Download PDFInfo
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Abstract
The invention provides a method, a system, a readable storage medium and a computer for improving uniformity of epitaxial wavelength, wherein the method comprises the following steps: dividing the epitaxial wafer into a plurality of concentric circle areas with different radiuses by taking the circle center as a center point; dividing the epitaxial wafer into a plurality of point sets, and distributing the point sets according to the distribution range of each concentric circle area to obtain a plurality of target areas; calculating the average wavelength of each target area, and calculating the slope of the epitaxial wafer according to the average wavelength; cycling all epitaxial wafers on a graphite bearing disc to obtain slopes of all epitaxial wafers, dividing the graphite bearing disc into a plurality of circular groove areas according to circular groove distribution, and calculating slope average values of all the circular groove areas according to distribution conditions of the epitaxial wafers on all the circular groove areas and the slopes of all the epitaxial wafers; and adding a warping coefficient to each circular groove region, and adjusting the technological parameters of the graphite bearing disc according to the slope average value and the warping coefficient so as to improve the uniformity of the luminous wavelengths of all epitaxial wafers on the graphite bearing disc.
Description
Technical Field
The present invention relates to the field of semiconductor technologies, and in particular, to a method and a system for improving uniformity of epitaxial wavelength, a readable storage medium, and a computer.
Background
With the rapid development of the semiconductor industry and the improvement of the living standard of people, the light-emitting diode is widely used in the illumination fields of indicator lamps, display screens and the like as a solid semiconductor diode light-emitting device.
In recent years, the research direction of semiconductor devices using GaN-based semiconductor materials has been very mature, and LED light emitting diodes have formed stable industrial chains, and for further cost reduction and productivity improvement, LED epitaxial growth uses substrates gradually transition from 2 inches to 4 inches and 6 inches, and large-size substrates need to ensure good on-chip wavelength uniformity. And therefore the temperature uniformity of epitaxial growth is required to be higher. The substrate is heated to generate deformation concave-convex difference, and a craftsman is required to adjust the warping of the epitaxial wafer and the concave-convex property of the wafer source through a process means.
In the prior art, the coverage area of each area of heating wire at the bottom of a graphite carrying disc is inconsistent with the coverage area of each circle of round groove of the graphite carrying disc, and the coverage area is affected by a plurality of area heating wires, so that the heated temperature of an epitaxial wafer in each round groove is uneven; the epitaxial wafer generates deformation concave-convex difference, so that the central area and the edge area of the wafer source are heated unevenly, namely the main wavelength uniformity of the grown epitaxial wafer is poor;
in order to improve the phenomenon, a technician is required to judge the concave-convex difference by analyzing the difference between the edge and the center in each circle of epitaxial wafer wavelength spectrum, and then the warping of the epitaxial wafer is adjusted by a process means, so that the source concave-convex property of the epitaxial wafer is adjusted to improve the uniformity of the epitaxial luminescence wavelength; the method is characterized in that the method comprises the steps of carrying out a process control on the wafer source, wherein the process control is carried out on the wafer source, and the wafer source is subjected to a process control process.
Disclosure of Invention
Based on this, an object of the present invention is to provide a method, a system, a readable storage medium and a computer for improving uniformity of epitaxial wavelength, so as to at least solve the above-mentioned disadvantages in the related art.
The invention provides an epitaxial wavelength uniformity improving method, which comprises the following steps:
step one: dividing the epitaxial wafer into a plurality of concentric circle areas with different radiuses by taking the circle center of the epitaxial wafer as a center point;
step two: dividing the epitaxial wafer into a plurality of point sets, and distributing the point sets according to the distribution range of the concentric circle regions to obtain a plurality of target regions;
step three: calculating the average wavelength of each target area, and calculating the slope of the epitaxial wafer according to the average wavelength of each target area;
step four: cycling all epitaxial wafers on a graphite bearing disc to obtain slopes of all epitaxial wafers, dividing the graphite bearing disc into a plurality of circular groove areas according to circular groove distribution, and calculating slope average values of the circular groove areas according to distribution conditions of epitaxial wafers on the circular groove areas and the slopes of all epitaxial wafers;
step five: and adding a warping coefficient to each circular groove region, and adjusting the technological parameters of the graphite bearing disc according to the slope average value of each circular groove region and the warping coefficient of each circular groove region so as to improve the uniformity of the luminous wavelength of all epitaxial wafers on the graphite bearing disc.
Further, the step of distributing each point set according to the distribution range of each concentric circle region to obtain a plurality of target regions includes:
acquiring the distribution coordinates of each concentric circle region and the coordinate positions of each point set;
and distributing the point sets based on the distribution coordinates of the concentric circle regions and the coordinate positions of the point sets to obtain a plurality of target regions.
Further, the step of calculating the mean wavelength of each target area includes:
and obtaining independent wavelengths of all the point sets in each target area, and calculating the mean wavelength of each target area according to the independent wavelengths of all the point sets in each target area.
Further, the calculation formula of the slope of the epitaxial wafer is as follows:
wherein W represents the slope of the epitaxial wafer, R represents the number of concentric regions in the epitaxial wafer,the average value of the number of concentric regions in the epitaxial wafer is represented by WD, and the wavelength of each concentric region in the epitaxial wafer is represented by WD R The mean wavelength of each concentric region in the epitaxial wafer is shown.
Further, a calculation formula for adjusting the technological parameters of the graphite bearing disc according to the slope average value of each circular groove area and the warping coefficient of each circular groove area is as follows:
ΔF＝(W 1 *K 1 +W 2 *K 2 +W 3 *K 3 +…+W x *K x )*F*C；
wherein Δf represents an adjustment value of the adjustment amplitude of the graphite carrier; w (W) x Represents the slope average, K of the X-th circular groove region x The warp coefficient corresponding to the X-th circular groove region, x=1, 2,3,..x; f represents the adjustment amplitude of the graphite bearing disc, and C represents the compensation coefficient.
The invention also provides an epitaxial wavelength uniformity improving system, which comprises:
the epitaxial wafer dividing module is used for dividing the epitaxial wafer into a plurality of concentric circle areas with different radiuses by taking the circle center of the epitaxial wafer as a center point;
the point set dividing module is used for dividing the epitaxial wafer into a plurality of point sets and distributing the point sets according to the distribution range of the concentric circle areas to obtain a plurality of target areas;
the slope calculation module is used for calculating the average wavelength of each target area and calculating the slope of the epitaxial wafer according to the average wavelength of each target area;
the graphite carrying disc dividing module is used for obtaining the slopes of all epitaxial wafers, dividing the graphite carrying disc into a plurality of circular groove areas according to the circular groove distribution, and calculating the average value of the slopes of all the circular groove areas according to the distribution condition of epitaxial wafers on all the circular groove areas and the slopes of all the epitaxial wafers;
and the parameter optimization module is used for adding a warping coefficient for each circular groove region, and adjusting the technological parameters of the graphite bearing disc according to the slope average value of each circular groove region and the warping coefficient of each circular groove region so as to improve the uniformity of the luminous wavelength of all epitaxial wafers on the graphite bearing disc.
Further, the point set dividing module includes:
a position acquisition unit configured to acquire distribution coordinates of each of the concentric circle regions and coordinate positions of each of the point sets;
and the point set dividing unit is used for distributing the point sets based on the distribution coordinates of the concentric circle areas and the coordinate positions of the point sets so as to obtain a plurality of target areas.
Further, the slope calculation module includes:
the slope calculation unit is used for obtaining independent wavelengths of all point sets in each target area and calculating average wavelength of each target area according to the independent wavelengths of all point sets in each target area.
The invention also proposes a readable storage medium having stored thereon a computer program which, when executed by a processor, implements the above-described epitaxial wavelength uniformity improvement method.
The invention also provides a computer, which comprises a memory, a processor and a computer program stored in the memory and capable of running on the processor, wherein the processor realizes the epitaxial wavelength uniformity improving method when executing the computer program.
Compared with the prior art, the invention has the beneficial effects that: dividing the epitaxial wafer into a plurality of concentric circle areas, dividing the epitaxial wafer into a plurality of point sets, further obtaining the slope of the epitaxial wafer according to each point set and each concentric circle area, displaying the concave-convex property of the epitaxial wafer source through the slope more accurately, effectively reducing the time for personnel to analyze the wavelength map, reducing the labor cost, adjusting the warping of the wafer source through a more visual and accurate process means, adjusting the concave-convex property of the wafer source to be optimal, enabling each part of the wafer source to be heated uniformly, and improving the wavelength uniformity of the produced epitaxial wafer; dividing the graphite bearing disc into a plurality of circular groove areas, calculating the slope average value of each circular groove area according to the slope of each epitaxial wafer, and avoiding the problem of overlarge adjustment deviation of the process means after abnormal deviation of the average value wavelength of the areas caused by abnormal deviation of the wavelength of individual point sets or deviation of the wavelength of the individual point sets by adding a warping coefficient.
Drawings
FIG. 1 is a flow chart of a method for improving uniformity of an epitaxial wavelength according to a first embodiment of the present invention;
FIG. 2 is a detailed flowchart of step S102 in FIG. 1;
FIG. 3 is a schematic view of a monolithic epitaxial wafer according to a first embodiment of the present invention dispersed into a plurality of point sets;
fig. 4 is a detailed flowchart of step S103 in fig. 1;
FIG. 5 is a schematic wavelength diagram of each point set of the epitaxial wafer in the first embodiment of the present invention;
FIG. 6 is a schematic diagram of an epitaxial wafer divided into a plurality of concentric circular regions according to a first embodiment of the present invention;
FIG. 7 is a block diagram of an epitaxial wavelength uniformity enhancement system according to a second embodiment of the present invention;
fig. 8 is a block diagram showing the structure of a computer according to a third embodiment of the present invention.
Description of main reference numerals:
| memory device | 10 | Point set dividing module | 12 |
| Processor and method for controlling the same | 20 | Slope calculation module | 13 |
| Computer program | 30 | Bearing disc dividing module | 14 |
| Epitaxial wafer dividing module | 11 | Parameter optimization module | 15 |
The invention will be further described in the following detailed description in conjunction with the above-described figures.
Detailed Description
In order that the invention may be readily understood, a more complete description of the invention will be rendered by reference to the appended drawings. Several embodiments of the invention are presented in the figures. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "mounted" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Example 1
Referring to fig. 1, a method for improving uniformity of epitaxial wavelength in a first embodiment of the present invention is shown, and the method specifically includes steps S101 to S105:
s101, dividing an epitaxial wafer into a plurality of concentric circle areas with different radiuses by taking the circle center of the epitaxial wafer as a center point;
in a specific implementation, when Y (Y > =1) wafer sources produced by each heat of the graphite bearing disk are measured, each epitaxial wafer takes the center of the circle as a center point, all epitaxial wafers are divided into R (in the embodiment, 3< R < 50) concentric circle areas with different radiuses, and in the embodiment, the substrate material used for producing the epitaxial wafers is any one of sapphire, silicon and silicon carbide.
S102, dividing the epitaxial wafer into a plurality of point sets, and distributing the point sets according to the distribution range of the concentric circle areas to obtain a plurality of target areas;
further, referring to fig. 2, the step S102 specifically includes steps S1021 to S1022:
s1021, acquiring the distribution coordinates of each concentric circle region and the coordinate positions of each point set;
and S1022, distributing the point sets based on the distribution coordinates of the concentric circle regions and the coordinate positions of the point sets to obtain a plurality of target regions.
In practice, referring to fig. 3, all the epitaxial wafers are divided into N (N>=2) sets of points, each set of points containing a specific coordinate position and an independent wavelength WD N The above-mentioned coordinate positions and the distribution coordinates of the concentric regions of the epitaxial wafer are used for allIs allocated, and each concentric circle region obtains a part of point set n, which satisfies the following conditions: n is n 1 +n 2 +…+n R N, and thus a plurality of target areas on each epitaxial wafer can be obtained;
it can be understood that by dividing the epitaxial wafer into a plurality of concentric circle regions and dividing the epitaxial wafer into a plurality of corresponding target regions according to all the point sets of the epitaxial wafer, the correlation between the point sets of the target regions and the corresponding regions is further enhanced.
S103, calculating the average wavelength of each target area, and calculating the slope of the epitaxial wafer according to the average wavelength of each target area;
further, referring to fig. 4, the step of calculating the mean wavelength of each target area in step S103 specifically includes step S1031:
s1031, obtaining independent wavelengths of all point sets in each target area, and calculating the average wavelength of each target area according to the independent wavelengths of all point sets in each target area.
In practice, referring to fig. 5 to 6, each of the above-mentioned all point sets contains an independent wavelength WD N Independent wavelength WD from the set of points within the target area N Calculating the point set mean wavelength WD of the target region R Obtaining the number R of concentric circle regions of the epitaxial wafer and each n of each R circle region R A point set, which is based on the number R of concentric circle regions of the epitaxial wafer and the point set average wavelength WD of all target regions on the epitaxial wafer R The slope of the epitaxial wafer was calculated according to the following formula:
wherein W represents the slope of the epitaxial wafer, R represents the number of concentric regions in the epitaxial wafer,represents the average value of the number of concentric circle regions in the epitaxial wafer, WD represents the wavelength, WD, of each concentric region in the epitaxial wafer R The mean wavelength of each concentric region in the epitaxial wafer is shown.
It can be understood that the slope of the epitaxial wafer can reflect the concave-convex data of the epitaxial wafer, when the slope is greater than 0, the epitaxial wafer is concave, when the slope is less than 0, the epitaxial wafer is convex, and when the slope is 0, the uniformity of the epitaxial wafer is the best, and the epitaxial wafer tends to be flat.
S104, cycling all epitaxial wafers on a graphite bearing disc in the steps S101 to S103 to obtain slopes of all epitaxial wafers, dividing the graphite bearing disc into a plurality of circular groove areas according to circular groove distribution, and calculating slope average values of the circular groove areas according to distribution conditions of epitaxial wafers on the circular groove areas and the slopes of all epitaxial wafers;
in a specific implementation, all epitaxial wafers on a graphite bearing plate are subjected to the steps to obtain the slopes of all epitaxial wafers, the graphite bearing plate is divided into X (X is more than or equal to 2 and less than or equal to 20) circular groove areas according to the circular groove distribution, it is understood that a plurality of epitaxial wafers are distributed on each circular groove area, and the average value W of the slopes of all the circular groove areas is calculated according to the distribution condition of the epitaxial wafers on each circular groove area and the slopes of all the epitaxial wafers X 。
It should be noted that, due to the difference of heating areas in the circular groove areas, the warpage of the epitaxial wafer needs to be adjusted by a process means so that the warpage of the epitaxial wafer meets the requirement, and the process parameter value of the adjusted process means is F (in this embodiment, the process means is long, in other embodiments, the process means may also be some process means capable of adjusting the warpage of the epitaxial wafer, such as the Ga source dosage, and the process means are different, and the corresponding process parameter values are also different).
S105, adding a warping coefficient for each circular groove region, and adjusting the technological parameters of the graphite bearing disc according to the slope average value of each circular groove region and the warping coefficient of each circular groove region so as to improve the uniformity of the luminous wavelength of all epitaxial wafers on the graphite bearing disc.
In particular embodimentsWhen in use, the warping coefficient K is added for each round groove area to satisfy K 1 +k 2 +k 3 +...+k X =1, where k 1 The warp coefficient, k, of the first round groove region 2 Is the warp factor of the second round groove area. And adjusting the technological parameters of the graphite bearing disc according to the obtained slope average value of each round groove area and the corresponding warping coefficient thereof to improve the uniformity of the luminous wavelength of all epitaxial wafers on the graphite bearing disc:
ΔF＝(W 1 *K 1 +W 2 *K 2 +W 3 *K 3 +…+W x *K x )*F*C；
wherein Δf represents an adjustment value of the adjustment amplitude of the graphite carrier; w (W) x Represents the slope average, K of the X-th circular groove region x The warp coefficient corresponding to the X-th circular groove region, x=1, 2,3,..x; f represents the adjustment amplitude of the graphite bearing disc, and C represents the compensation coefficient.
In addition, in actual production, the substrate material and quality used in epitaxial wafer production are subject to fluctuation, the difference between the machines and the like, so that a compensation coefficient C is added when the warping degree is adjusted in the whole process, and the influence of other factors on the epitaxial wafer is further reduced.
In summary, according to the epitaxial wavelength uniformity improving method in the above embodiment of the present invention, an epitaxial wafer is divided into a plurality of concentric circle regions, and is divided into a plurality of point sets, so that the slope of the epitaxial wafer is obtained according to each point set and each concentric circle region, the concave-convex property of the epitaxial wafer source is more accurately shown through the slope, the time for personnel to analyze the wavelength spectrum is effectively reduced, the labor cost is reduced, the warpage of the wafer source is adjusted through a more visual and accurate process means, the concave-convex property of the wafer source is adjusted to be optimal, each part of the wafer source is heated uniformly, and the wavelength uniformity of the produced epitaxial wafer is improved; dividing the graphite bearing disc into a plurality of circular groove areas, calculating the slope average value of each circular groove area according to the slope of each epitaxial wafer, and avoiding the problem of overlarge adjustment deviation of the process means after abnormal deviation of the average value wavelength of the areas caused by abnormal deviation of the wavelength of individual point sets or deviation of the wavelength of the individual point sets by adding a warping coefficient.
Example two
In another aspect, referring to fig. 7, an epitaxial wavelength uniformity enhancing system according to a second embodiment of the present invention is shown, including:
the epitaxial wafer dividing module 11 is used for dividing the epitaxial wafer into a plurality of concentric circle areas with different radiuses by taking the circle center of the epitaxial wafer as a center point;
a point set dividing module 12, configured to divide the epitaxial wafer into a plurality of point sets, and distribute each of the point sets according to a distribution range of each of the concentric circle regions, so as to obtain a plurality of target regions;
further, the point set dividing module 12 includes:
a position acquisition unit configured to acquire distribution coordinates of each of the concentric circle regions and coordinate positions of each of the point sets;
and the point set dividing unit is used for distributing the point sets based on the distribution coordinates of the concentric circle areas and the coordinate positions of the point sets so as to obtain a plurality of target areas.
The slope calculation module 13 is configured to calculate a mean wavelength of each target area, and calculate a slope of the epitaxial wafer according to the mean wavelength of each target area;
further, the slope calculation module 13 includes:
the slope calculation unit is used for obtaining independent wavelengths of all point sets in each target area and calculating average wavelength of each target area according to the independent wavelengths of all point sets in each target area.
The carrier plate dividing module 14 is configured to obtain slopes of all epitaxial wafers, divide the graphite carrier plate into a plurality of circular groove areas according to circular groove distribution, and calculate slope average values of the circular groove areas according to distribution conditions of epitaxial wafers on the circular groove areas and the slopes of all epitaxial wafers;
and the parameter optimization module 15 is used for adding a warping coefficient for each circular groove region, and adjusting the technological parameters of the graphite bearing disc according to the slope average value of each circular groove region and the warping coefficient of each circular groove region so as to improve the uniformity of the luminous wavelengths of all epitaxial wafers on the graphite bearing disc.
The functions or operation steps implemented when the above modules and units are executed are substantially the same as those in the above method embodiments, and are not described herein again.
The epitaxial wavelength uniformity enhancing system provided in the embodiment of the present invention has the same implementation principle and the same technical effects as those of the foregoing method embodiment, and for the sake of brief description, reference may be made to the corresponding content in the foregoing method embodiment where the device embodiment section is not mentioned.
Example III
The present invention also proposes a computer, referring to fig. 8, which shows a computer according to a third embodiment of the present invention, including a memory 10, a processor 20, and a computer program 30 stored in the memory 10 and capable of running on the processor 20, where the processor 20 implements the above-mentioned epitaxial wavelength uniformity improvement method when executing the computer program 30.
The memory 10 includes at least one type of readable storage medium including flash memory, a hard disk, a multimedia card, a card memory (e.g., SD or DX memory, etc.), a magnetic memory, a magnetic disk, an optical disk, etc. Memory 10 may in some embodiments be an internal storage unit of a computer, such as a hard disk of the computer. The memory 10 may also be an external storage device in other embodiments, such as a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash Card (Flash Card), etc. Further, the memory 10 may also include both internal storage units and external storage devices of the computer. The memory 10 may be used not only for storing application software installed in a computer and various types of data, but also for temporarily storing data that has been output or is to be output.
The processor 20 may be, in some embodiments, an electronic control unit (Electronic Control Unit, ECU), a central processing unit (Central Processing Unit, CPU), a controller, a microcontroller, a microprocessor, or other data processing chip, for executing program codes or processing data stored in the memory 10, such as executing an access restriction program, or the like.
It should be noted that the structure shown in fig. 8 does not constitute a limitation of the computer, and in other embodiments, the computer may include fewer or more components than shown, or may combine certain components, or may have a different arrangement of components.
The embodiment of the invention also provides a readable storage medium, on which a computer program is stored, which when executed by a processor, implements the epitaxial wavelength uniformity improvement method as described above.
Those of skill in the art will appreciate that the logic and/or steps represented in the flow diagrams or otherwise described herein, e.g., a ordered listing of executable instructions for implementing logical functions, can be embodied in any computer-readable storage medium for use by or in connection with an instruction execution system, apparatus, or device, such as a computer-based system, processor-containing system, or other system that can fetch the instructions from the instruction execution system, apparatus, or device and execute the instructions. For the purposes of this description, a "computer-readable storage medium" can be any means that can contain, store, communicate, propagate, or transport the program for use by or in connection with the instruction execution system, apparatus, or device.
More specific examples (a non-exhaustive list) of the computer-readable storage medium would include the following: an electrical connection (electronic device) having one or more wires, a portable computer diskette (magnetic device), a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disc read-only memory (CDROM). In addition, the computer-readable storage medium may even be paper or other suitable readable storage medium on which the program is printed, as the program may be electronically captured, via, for instance, optical scanning of the paper or other readable storage medium, then compiled, interpreted, or otherwise processed in a suitable manner, if necessary, and then stored in a computer memory.
It is to be understood that portions of the present invention may be implemented in hardware, software, firmware, or a combination thereof. In the above-described embodiments, the various steps or methods may be implemented in software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, may be implemented using any one or combination of the following techniques, as is well known in the art: discrete logic circuits having logic gates for implementing logic functions on data signals, application specific integrated circuits having suitable combinational logic gates, programmable Gate Arrays (PGAs), field Programmable Gate Arrays (FPGAs), and the like.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples merely represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the invention. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.
Claims (8)
1. The epitaxial wavelength uniformity improving method is characterized by comprising the following steps of:
step one: dividing the epitaxial wafer into a plurality of concentric circle areas with different radiuses by taking the circle center of the epitaxial wafer as a center point;
step two: dividing the epitaxial wafer into a plurality of point sets, and distributing the point sets according to the distribution range of the concentric circle regions to obtain a plurality of target regions;
step three: calculating the average wavelength of each target area, and calculating the slope of the epitaxial wafer according to the average wavelength of each target area, wherein the calculation formula of the slope of the epitaxial wafer is as follows:
；
in the method, in the process of the invention,represents the slope of epitaxial wafer, +.>Indicating the number of concentric areas in the epitaxial wafer, < >>Mean value of the number of concentric circle regions in the epitaxial wafer, +.>Wavelength of each concentric region in the epitaxial wafer, </i >>Mean wavelength of each concentric circle region in the epitaxial wafer is represented;
step four: cycling all epitaxial wafers on a graphite bearing disc to obtain slopes of all epitaxial wafers, dividing the graphite bearing disc into a plurality of circular groove areas according to circular groove distribution, and calculating slope average values of the circular groove areas according to distribution conditions of epitaxial wafers on the circular groove areas and the slopes of all epitaxial wafers;
step five: adding a warping coefficient to each circular groove region, and adjusting the technological parameters of the graphite bearing disc according to the slope average value of each circular groove region and the warping coefficient of each circular groove region to improve the uniformity of the luminescence wavelength of all epitaxial wafers on the graphite bearing disc, wherein the calculation formula of the technological parameters of the graphite bearing disc according to the slope average value of each circular groove region and the warping coefficient of each circular groove region is as follows:
；
in the method, in the process of the invention,an adjustment value representing an adjustment amplitude of the graphite carrier; />Represents the slope mean of the X-th circular groove region, < >>Representing the warp coefficient corresponding to the xth circular groove region, x=1, 2,3, …, X; f represents the adjustment amplitude of the graphite bearing disc, and C represents the compensation coefficient.
2. The epitaxial wavelength uniformity improvement method according to claim 1, wherein the step of distributing each of the point sets in accordance with the distribution range of each of the concentric circle regions to obtain a plurality of target regions comprises:
acquiring the distribution coordinates of each concentric circle region and the coordinate positions of each point set;
and distributing the point sets based on the distribution coordinates of the concentric circle regions and the coordinate positions of the point sets to obtain a plurality of target regions.
3. The method of claim 1, wherein the step of calculating the mean wavelength of each of the target regions comprises:
and obtaining independent wavelengths of all the point sets in each target area, and calculating the mean wavelength of each target area according to the independent wavelengths of all the point sets in each target area.
4. An epitaxial wavelength uniformity promotion system, comprising:
the epitaxial wafer dividing module is used for dividing the epitaxial wafer into a plurality of concentric circle areas with different radiuses by taking the circle center of the epitaxial wafer as a center point;
the point set dividing module is used for dividing the epitaxial wafer into a plurality of point sets and distributing the point sets according to the distribution range of the concentric circle areas to obtain a plurality of target areas;
the slope calculation module is used for calculating the average wavelength of each target area and calculating the slope of the epitaxial wafer according to the average wavelength of each target area, wherein the calculation formula of the slope of the epitaxial wafer is as follows:
；
in the method, in the process of the invention,represents the slope of epitaxial wafer, +.>Indicating the number of concentric areas in the epitaxial wafer, < >>Mean value of the number of concentric circle regions in the epitaxial wafer, +.>Wavelength of each concentric region in the epitaxial wafer, </i >>Mean wavelength of each concentric circle region in the epitaxial wafer is represented;
the graphite carrying disc dividing module is used for obtaining the slopes of all epitaxial wafers, dividing the graphite carrying disc into a plurality of circular groove areas according to the circular groove distribution, and calculating the average value of the slopes of all the circular groove areas according to the distribution condition of epitaxial wafers on all the circular groove areas and the slopes of all the epitaxial wafers;
the parameter optimization module is used for adding a warping coefficient to each circular groove region, and adjusting the technological parameters of the graphite bearing disc according to the slope average value of each circular groove region and the warping coefficient of each circular groove region so as to improve the uniformity of the luminescence wavelength of all epitaxial wafers on the graphite bearing disc, wherein the calculation formula for adjusting the technological parameters of the graphite bearing disc according to the slope average value of each circular groove region and the warping coefficient of each circular groove region is as follows:
；
in the method, in the process of the invention,an adjustment value representing an adjustment amplitude of the graphite carrier; />Represents the slope mean of the X-th circular groove region, < >>Representing the warp coefficient corresponding to the xth circular groove region, x=1, 2,3, …, X; f represents the adjustment amplitude of the graphite bearing disc, and C represents the compensation coefficient.
5. The epitaxial wavelength uniformity promotion system of claim 4, wherein the point set partitioning module comprises:
a position acquisition unit configured to acquire distribution coordinates of each of the concentric circle regions and coordinate positions of each of the point sets;
and the point set dividing unit is used for distributing the point sets based on the distribution coordinates of the concentric circle areas and the coordinate positions of the point sets so as to obtain a plurality of target areas.
6. The epitaxial wavelength uniformity promotion system of claim 4, wherein the slope calculation module comprises:
the slope calculation unit is used for obtaining independent wavelengths of all point sets in each target area and calculating average wavelength of each target area according to the independent wavelengths of all point sets in each target area.
7. A readable storage medium having stored thereon a computer program, which when executed by a processor implements the epitaxial wavelength uniformity improvement method according to any one of claims 1 to 3.
8. A computer comprising a memory, a processor and a computer program stored on the memory and executable on the processor, wherein the processor implements the epitaxial wavelength uniformity improvement method of any one of claims 1 to 3 when the computer program is executed by the processor.
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