JP2022506293A - Liner assembly, reaction chamber and semiconductor processing equipment - Google Patents

Abstract

A liner assembly, a reaction chamber and a semiconductor processing apparatus are provided. The liner assembly includes a grounded liner ring (3), in which a plurality of shielding units are arranged in places along the circumferential direction of the liner ring (3), and each shielding unit is a liner ring. A gap (30) formed between the inner peripheral surface of (3) and the outer peripheral surface of the liner ring (3) and penetrating the gap (30), and the gap (30) is in the direction from the inner peripheral surface to the outer peripheral surface. A plurality of first passages arranged in various places and a plurality of second passages each communicating with two adjacent first passages, and on the inner peripheral surface of the liner ring (3). Orthogonal projections of two individual first passages adjacent to each other are separated from each other. The liner assembly can protect the sidewalls of the reaction chamber and prevent contamination of the sidewalls.

Description

The present disclosure belongs to the field of semiconductor processing and specifically relates to liner assemblies, reaction chambers and semiconductor processing equipment.

The magnetron sputtering physical vapor deposition (PVD) apparatus includes a reaction chamber with an internal base configured to carry the workpiece to be processed. In addition, the target is located above the base and in the reaction chamber and is electrically connected to a radio frequency (RF) power source to excite the process gas to generate plasma. In addition, a support assembly is placed above the target to, together with the target, form a closed chamber body filled with deionized water. A magnetron is further arranged within the closed chamber body and is connected to a drive source outside the closed chamber body in order to scan the target under the action of the drive source.

In the process of magnetron sputtering PVD, the process gas is introduced into the reaction chamber, the RF power is turned on, the process gas is excited to generate plasma, and the plasma impacts the target and treats the metal atoms that escape from the target. It should be deposited on the workpiece. In addition, some of the metal atoms escaping from the target are deposited on the inner wall of the reaction chamber, resulting in contamination of the reaction chamber, which affects the service life and cost of use of the reaction chamber.

According to one aspect of the present disclosure, a liner assembly is provided, which is a grounded liner ring in which a plurality of shielding units are arranged in places along the circumferential direction of the liner ring. The shielding unit is a gap formed and penetrates between the inner peripheral surface of the liner ring and the outer peripheral surface of the liner ring, and the gaps are arranged in various places in the direction from the inner peripheral surface to the outer peripheral surface. A grounded liner ring, including a plurality of first passages and a plurality of second passages each communicating with two adjacent first passages, and on the inner peripheral surface of the liner ring. The orthogonal projections of each of the two first passages adjacent to each other are separated from each other.

In some embodiments of the present disclosure, the liner ring comprises at least two nested sub-rings having different inner diameters, each sub-ring being grounded and, with respect to the gap, each of the first passages. Radial through holes correspondingly placed within the individual subrings, and the second passage is an annular gap correspondingly placed between the two individual subrings adjacent to each other. ..

In some embodiments of the present disclosure, the depth-to-width ratio of each gap is:
B / A + C / D> 5
Where A is the width of the radial through hole in the circumferential direction of the subring, B is the radial thickness of the subring, and C is two adjacent adjacent to each other in the same subring. The center-to-center distance between the individual radial through holes, where D is the radial thickness of the annular gap.

In some embodiments of the present disclosure, the center-to-center distance between two adjacent radial through holes in the same subring is greater than or equal to 2 mm.

In some embodiments of the present disclosure, the radial thickness of the subring is 5 mm or less.
In some embodiments of the present disclosure, the radial thickness of the annular gap is less than 10 mm.

In some embodiments of the present disclosure, the width of the radial through hole in the circumferential direction of the subring is in the range of 0.5 mm to 10 mm.

In some embodiments of the present disclosure, the number of gaps is tens.
In some embodiments of the present disclosure, the number of gaps is 60 or greater.

In some embodiments of the present disclosure, between two individual sub-rings adjacent to each other, each radial through-hole in one sub-ring is an intermediate position between the two radial through-holes in the other sub-ring. And the two radial through-holes in the other sub-ring are adjacent to the radial through-holes in one sub-ring.

In some embodiments of the present disclosure, each radial through hole extends axially to the subring.

In some embodiments of the present disclosure, each radial through hole penetrates the sub ring in the axial direction of the sub ring.

According to another aspect of the present disclosure, a reaction chamber comprising a chamber body is provided, which further comprises a reaction chamber.
A base for supporting the workpiece to be processed, which is placed in the chamber body,
With a target located above the base and inside the chamber body,
The above-mentioned liner assembly, which is arranged inside the side wall of the chamber body and surrounds the inside, is provided.

In some embodiments of the present disclosure, the reaction chamber further comprises.
A coil that is wound along the outside of the side wall of the chamber body,
Includes RF power supplies that are electrically connected to the coil.

In some embodiments of the present disclosure, the length of each gap in the axial direction of the liner ring is longer than the axial length of the coil, and the orthogonal projection of the coil on the outer peripheral surface of the liner ring is the axial direction of the liner ring. Positioned between the two ends of the gap in.

According to another aspect of the present disclosure, a semiconductor processing apparatus including the reaction chamber described above is provided.
The present disclosure has the following beneficial effects.

In the liner assembly of the present disclosure, a plurality of shielding units, that is, gaps formed in the liner ring, are arranged in places along the circumferential direction of the liner ring, and the gaps are arranged in the direction from the inner peripheral surface to the outer peripheral surface. The orthogonal projections of the two first passages adjacent to each other on the inner peripheral surface of the liner ring, which include a plurality of first passages arranged in places of the above, are separated from each other. In this method, when the liner assembly is applied to the reaction chamber, the plasma can be prevented from passing through the gap, thus protecting the side walls of the reaction chamber and preventing contamination of the side walls.

The reaction chamber of the present disclosure employs the liner assembly described above, thereby protecting the sidewalls of the reaction chamber and preventing contamination thereof.

The semiconductor processing apparatus of the present disclosure employs the above-mentioned reaction chamber, and thus can protect the side wall of the reaction chamber and prevent its contamination.

The above and other purposes, features and advantages of the present disclosure will become more apparent from the following description of embodiments of the present disclosure with reference to the accompanying drawings.

It is sectional drawing of the liner assembly by one Embodiment of this disclosure. FIG. 3 is a radial cross-sectional view of a liner assembly according to an embodiment of the present disclosure. It is an enlarged view of the part P of FIG. FIG. 3 is a cross-sectional structural view of a liner assembly along its axial direction according to an embodiment of the present disclosure. FIG. 3 is a developed plan view showing an orthogonal projection of a first passage of a liner assembly gap on the inner peripheral surface of the liner ring according to an embodiment of the present disclosure. It is sectional drawing of the reaction chamber by one Embodiment of this disclosure. It is sectional drawing of another magnetron sputtering PVD apparatus. FIG. 3 is a developed plan view showing orthogonal projections of the coils and gaps of the reaction chamber on the outer peripheral surface of the liner ring according to one embodiment of the present disclosure.

In order to better clarify the purposes, technical solutions and advantages of the present disclosure, the present disclosure will be described in more detail below with reference to specific embodiments and drawings.

One embodiment of the present disclosure provides a liner assembly that includes a grounded liner ring 3, as shown in FIG. In this embodiment, the liner ring 3 surrounds two nested sub-rings having a split structure and specifically having different inner diameters, namely the first sub-ring 31 and the first sub-ring 31. The first sub-ring 31 and the second sub-ring 32, including the second sub-ring 32, are both grounded via the connector 34. For example, the first sub-ring 31 and the second sub-ring 32 are circular rings, and an annular gap is formed between them.

It should be noted that the Z direction in FIG. 1 is the axial direction of each subring and the XY plane is a plane parallel to the radial cross section of each subring.

Referring to FIGS. 2 and 3, a plurality of shielding units are arranged in the liner ring 3 in places along the circumferential direction, and each shielding unit is in the inner peripheral surface (that is, in the first sub-ring 31). A gap 30 formed and penetrates between the peripheral surface) and the outer peripheral surface (that is, the outer peripheral surface of the second sub-ring 32), and the gap 30 is in the direction from the inner peripheral surface to the outer peripheral surface. It includes a plurality of first passages arranged in places and a plurality of second passages each communicating with two adjacent first passages. In this embodiment, with respect to the gap 30, the first passage is a radial through hole arranged in the sub ring, specifically, a plurality of holes arranged in the first sub ring 31. A plurality of second radial through holes 302A arranged in the first radial through hole 301A and the second sub ring 32. The second passage is an annular gap arranged between two individual sub-rings adjacent to each other, that is, between the outer peripheral surface of the first sub-ring 31 and the inner peripheral surface of the second sub-ring 32. It is a circular gap. The first radial through hole 301A communicates with the second radial through hole 302A through the annular gap, so that the first radial through hole 301A, the annular gap and the second radial through hole 302A , Form a gap 30 that allows the supply of RF energy.

FIG. 4 shows only the first radial through hole 301A according to this embodiment. As shown in FIG. 4, each of the first radial through holes 301A is a straight strip-shaped through hole, the length direction thereof is set along the Z direction, that is, the first radial direction. The through hole 301A extends along the axial direction of the first sub-ring 31. In this method, the space occupied by a single radial through hole in the circumferential direction of the sub ring is reduced, which allows more radial through holes to be added in the sub ring. In actual use, the length direction may be set to form an angle with the Z direction. Further, instead of a straight through hole, a through hole having another shape such as a tapered hole can be adopted. The shape and / or size of each of the second radial through holes 302A may be the same as or different from that of the first radial through holes 301A.

In some cases, the first radial through hole 301A penetrates one end of the first sub-ring 31 in the axial direction thereof.

As shown in FIG. 5, the plane 33 is a development plane of the inner peripheral surface of the liner ring (that is, the inner peripheral surface of the first sub ring 31). With respect to the gap 30, orthogonal projections of two individual first passages adjacent to each other on the inner surface of the liner ring (ie, the inner surface of the first subring 31) are separated from each other. .. Specifically, each orthogonal projection of the first radial through hole 301A (indicated by a dotted line in FIG. 5) and one of the orthogonal projections of the second radial through hole 302A (in the solid line in FIG. 5). (Show) is separated from each other on the plane 33, so that the gap 30 constitutes a labyrinth structure. Therefore, when the liner assembly is applied to the reaction chamber, the gap 30 can prevent the plasma from passing through the gap 30 having a maze structure, in addition to ensuring the supply of RF energy. , The sidewalls of the reaction chamber are protected from contamination.

In this embodiment, two individual first passages adjacent to each other on the inner peripheral surface of the liner ring 30 (that is, the inner peripheral surface of the first subling 31 and the developed surface thereof is a plane 33). It should be noted that the orthogonal projections of are separated from each other. In this embodiment, the positional relationship between two individual first passages adjacent to each other is merely an example with the inner peripheral surface of the liner ring as a reference surface. However, any other reference plane, such as the outer peripheral surface of the liner ring 30, may be used to indicate such a positional relationship.

The liner ring 3 in this embodiment has a split structure, that is, is composed of a plurality of sub-rings. However, the present disclosure is not limited to this. In practical use, the liner ring 3 may be formed in an integral structure, i.e., it consists of only a single ring body, and with respect to the gap 30, all of the first and second passages are single. Placed inside the ring. In this case, the second passage is no longer an annular gap between two individual subrings adjacent to each other, but a non-annular passage each located between two individual first passages adjacent to each other. In addition to ensuring the integral structure of the liner ring 3, the non-annular passage only needs to communicate the two adjacent first passages with each other.

The above description is merely exemplary, and the present embodiment is not limited thereto. The number of sublings may exceed two. The subrings are nested together and thus have different inner diameters.

Referring to FIG. 3, the depth-to-width ratio of each gap 30 is
B / A + C / D> 5
Here, A is the width of the radial through hole in the circumferential direction of the sub ring (the first radial through hole 301A is taken as an example), and B is the radial thickness of the sub ring. (Take the second sub-ring 32 as an example), C is the center-to-center distance between two individual radial through-holes adjacent to each other in the same sub-ring (one example is the first radial through-hole 301A). , D is the radial thickness of the annular gap (the radial distance between the outer peripheral surface of the first sub-ring 31 and the inner peripheral surface of the second sub-ring 32).

The depth-to-width ratio of the gap 30, defined as B / A + C / D, determines the ability of the gap 30 to prevent the penetration of metal atoms. Setting the depth-to-width ratio greater than 5 can ensure that the metal atoms are successfully blocked by the gap 30.

As for the radial thickness B of the sub-ring, the thicker the sub-ring, the heavier the liner ring 3 and the smaller the inner diameter of the reaction chamber, so that the thickness B is such that the liner ring 3 is not too heavy. The inner diameter of the reaction chamber may be set to 5 mm or less so as not to be too small.

Regarding the radial thickness D of the annular gap, considering that if the thickness D is too large, the plasma tends to enter the gap between the first sub-ring 31 and the second sub-ring 32, the thickness is taken into consideration. D may be set to less than 10 mm in order to reduce the probability that the plasma will enter the gap between the first sub-ring 31 and the second sub-ring 32.

As for the width A of the radial through hole in the subring circumferential direction, the smaller the width A, the more difficult it is for metal atoms to pass through the radial through hole, so the width A is set to less than 10 mm. It may be a small value of 0.5 mm.

The center-to-center distance C between two adjacent radial through-holes in the same sub-ring is associated with the number of radial through-holes in these sub-rings. The larger the distance C, the larger the depth-to-width ratio of the gap 30, making it more difficult for metal atoms to pass through the gap 30. However, if the distance C is too large, the number of radial through holes in the same subring will be affected. Therefore, the distance C may be set to be 2 mm or more so as not only to block the metal atom but also to satisfy the requirement of the number of radial through holes.

Optionally, the number of gaps 30, i.e. the number of radial through holes in the same subring, is tens, preferably 60 or more, to ensure sufficient supply of RF energy.

In practical applications, the number of radial through holes in different subrings may or may not be the same. If the number of radial through-holes in different sub-rings is the same, then between two individual sub-rings adjacent to each other, each radial through-hole in one sub-ring has two radial through-holes in the other sub-ring. Corresponding to an intermediate position between the through holes, the two radial through holes in the other sub-ring are adjacent to the radial through holes in one sub-ring. Specifically, as shown in FIG. 3, the first radial through hole 301A in the first sub ring 31 is between the two second radial through holes 302A in the second sub ring 32, respectively. Corresponding to the intermediate position of, the two second radial through holes 302A are adjacent to the first radial through hole 301A. In this method, in order to ensure a uniform supply of RF energy, the route through which the RF energy passes through the gap may be the same, and the plurality of gaps 30 are uniform along the circumferential direction of the liner ring 3. It may be distributed in.

Another embodiment of the present disclosure provides a reaction chamber. As shown in FIG. 6, the reaction chamber has a chamber body 1, a base 10 for carrying a workpiece 20 to be processed, which is arranged in the chamber body 1, and a chamber body 1 above the base 10. Includes a target 7 disposed in the above and a liner assembly provided by the embodiment described above.

For example, the reaction chamber in this embodiment can be applied to a magnetron sputtering PVD device.

The liner assembly is configured to be located inside the side wall of the chamber body 1 to surround the inside and prevent metal atoms escaping from the target 7 from depositing on the side wall of the reaction chamber.

In this embodiment, the side wall of the chamber body 1 includes an upper side wall 11, a lower side wall 12, and a bottom wall 13, and the upper side wall 11 and the lower side wall 12 are arranged apart from each other in the axial direction of the chamber body 1. And the insulating cylinder 112 is arranged in between.

The reaction chamber further includes an upper electrode assembly, which includes a plasma excitation source 4, a magnetron 8 and a support assembly 5. The plasma excitation source 4 is configured to excite a process gas to generate plasma. The magnetron 8 is connected to the drive device 9. The target 7 is fixed to the bottom end of the support assembly 5, and the support assembly 5 and the target 7 form a closed chamber suitable for containing the deionized water 6. The magnetron 8 is positioned in the closed chamber and is connected to the drive device 9 outside the closed chamber. Around the workpiece 20 to be processed, a press ring 17 for fixing the workpiece 20 to be processed at that position on the base 10 is further arranged. The base 10 further applies RF power using the RF power supply 16. Under the negative bias of the base 10, the plasma can impact the bottom of the deep pores of the workpiece 20 to be processed at an accelerated rate, so that some of the metal deposited on the bottom is deep pores. It is deposited on the side wall of the deep hole, which increases the coverage of the side wall of the deep hole.

In the liner assembly provided in this embodiment, the upper end of the first sub-ring 31 is fixed to the upper side wall 11 via the adapter 15 and grounded through the upper side wall 11 and the second sub-ring 32. The upper end of the is fixed to the upper side wall 11 via the adapter 14 and grounded via the upper side wall 11. The sub-ring may be screwed to the adapter. The lower end of the second sub-ring 32 is bent inward and extends to the periphery of the base 10, thus preventing metal atoms from depositing on the bottom wall 13 of the chamber body 1.

FIG. 7 shows another reaction chamber internally equipped with an upper liner 35, an intermediate liner 36, and a lower liner 37, with the upper liner 35 and the lower liner 37 each having two adapters 18 and two adapters 18 to the sidewalls of the reaction chamber. It is fixed via 19. A slot is formed in the intermediate liner 36 that allows energy from the coil 21 to be efficiently coupled into the reaction chamber. Due to the slots, metal atoms can penetrate the intermediate liner 36 and be deposited on the insulation tube 112 in the reaction chamber, resulting in contamination of the side walls of the reaction chamber. Further, the intermediate liner 36 is set to have a stray potential and therefore needs to be insulated from the upper liner 35 and the lower liner 37 by an insulator. Metal atoms can also be deposited on the insulator, which deprives the insulator of its insulating function and reduces the energy binding efficiency of the coil.

For the reaction chamber shown in FIG. 7, the reaction chamber provided in this embodiment can employ the liner assembly of the present disclosure and thus protect the sidewalls of the reaction chamber. When the treatment is performed in the reaction chamber, the metal atoms, as they pass through the gap 30, are deposited on the first passage, rather than on the insulating cylinder on the side wall of the reaction chamber, and thus the reaction. Contamination of the side walls of the chamber is prevented. Moreover, the liner assembly is grounded, so it is not necessary to set the liner assembly to have a stray potential and to insulate the liner assembly from other components. Compared to liner assemblies with segmented structures and stray potentials in the prior art, the liner assemblies of the present disclosure simplify the structure and manufacturing process of the reaction chamber and save equipment costs.

In this embodiment, the coil 21 of the reaction chamber and the RF power source 22 form an auxiliary plasma excitation source. The coil 21 is wound along the outside of the side wall of the chamber body 1. Specifically, for example, the coil 21 is wound along the outside of the insulating cylinder 112 and electrically connected to the RF power supply 22.

In this embodiment, the coil 21 may be formed from a spirally wound one-turn or multi-turn coil, and RF power supplied by the RF power supply 22 is transferred to the chamber body 1 in an insulating cylinder 112. It is configured to be combined via. The insulating cylinder 112 is configured to achieve a high degree of vacuum inside the chamber body 1 as part of the chamber body 1 and to allow energy from the coil 21 to be coupled to the chamber body 1. To.

In one process, when a process gas such as argon is introduced into the chamber body 1, the energy from the coil 21 is in addition to the plasma excitation source 4 of the upper electrode assembly that can excite the process gas to generate plasma. Also, after being coupled into the chamber body 1 via the insulation tube 112 and the liner assembly, argon can be excited to generate a second plasma. Under the negative bias of the base 10, the second plasma impacts the membrane at the bottom of the deep hole of the workpiece 20 to be processed at an accelerated rate, and thus of the metal deposited at the bottom of the deep hole. A portion is deposited on the two side walls of the deep hole, which increases the coverage of the side wall of the deep hole.

In this embodiment, since each gap in the liner assembly has the function of blocking the plasma, it is possible to arrange a relatively large number of gaps as long as the gap can achieve protection of the side wall of the reaction chamber. The large number of gaps can significantly reduce the eddy current loss caused by the liner assembly, and even if the liner assembly contains multiple subrings and is grounded, more of the energy from the coil 21 will be available. It can be ensured that it is placed in the chamber body 1 of the reaction chamber, which enhances the energy coupling efficiency. Moreover, the energy binding efficiency can be kept unchanged and does not decrease at the time of process execution.

With respect to the liner assembly in the reaction chamber, the width A of the radial through-holes in the circumferential direction of the sub-ring and the center-to-center distance C between two adjacent individual radial through-holes in the same sub-ring are of different target materials. It is possible to set different values according to. Targets of different materials have different viscosity coefficients, so that metal atoms with different abilities to pass through the gap 30 and with a lower viscosity coefficient will more easily pass through the gap 30 and be deposited in the insulation tube 112. Is possible. Taking tantalum (Ta) as an example, Ta should have a width A of less than 2 mm and a distance C of greater than 20 mm because Ta has a very low viscosity coefficient. Copper has a viscosity coefficient higher than Ta, so the width A should be less than 5 mm and the distance C should be greater than 10 mm.

In this embodiment, the material of the liner assembly may be a metal material such as Al or stainless steel. As shown in FIG. 8, the plane 33 is a development plane of the inner peripheral surface of the liner ring (that is, the inner peripheral surface of the first sub ring 31). The orthogonal projection of the coil 21 on the plane 33 is positioned within the area 332, and the orthogonal projection of the first radial through hole 301A in the first sub ring 31 on the plane 33 and the second sub ring 32. The orthogonal projection of the radial through hole 302A of 2 is positioned within the area 331. The axial length of each sub-ring of each radial through-hole is longer than the axial length of the coil 21, and the orthogonal projection of the coil 21 on the plane 33 is the axial length of the sub-ring of each radial through-hole. Positioned between both ends. Therefore, it is possible to reduce the eddy current loss caused by the liner assembly and improve the energy coupling efficiency.

The above description is merely exemplary, and the present embodiment is not limited thereto. If the reaction chamber liner assembly contains three or more liners, all liners are grounded by being secured to the upper cylinder via corresponding adapters.

Yet another embodiment of the present disclosure provides a semiconductor processing apparatus, which may be, for example, a magnetron sputtering PVD apparatus. The semiconductor processing apparatus includes the reaction chamber provided in the above-described embodiment and is used for producing substances and membranes made of Cu, Ta, Ti, Al and the like.

Indicates directions in embodiments such as "upper", "lower", "front", "back", "left" and "right". It should be noted that the terminology used for this is merely to indicate the orientation with reference to the drawings and is not intended to limit the scope of protection of the present disclosure. Throughout the drawings, the same element is represented by the same or similar reference digits. If the content of this disclosure may be misleading, the description of the conventional structure or setting is omitted.

The shapes and sizes of the components in the drawings do not reflect actual sizes and ratios, but are merely exemplary embodiments of the present disclosure. Furthermore, any reference number in parentheses in the claims shall not be considered to limit the scope of the claims.

Unless otherwise indicated, the numerical parameters provided in the text of the specification and in the appended claims are approximations that may vary according to the required characteristics achieved by the present disclosure. Specifically, it is understood that the text of the specification and all numbers representing the content or reaction conditions of the components in the claims are modified by the word "about" in all circumstances. It should be. In general, the numbers mean that, in some embodiments, a variation of ± 10%, ± 5%, ± 1% or ± 0.5% of the specified number is included.

Moreover, the term "include" does not exclude elements or steps not listed in the claims. The term "one (a or an)" preceding an element does not preclude the existence of multiple such elements.

Ordinal numbers such as "first", "second" and "third" in the text and claims are intended to qualify the corresponding element. It does not imply or indicate that the element being modified has any ordinal numbers. Furthermore, the ordinal numbers do not indicate the order of the elements, or the order of the manufacturing process of the elements, but merely to distinguish between two elements with the same name.

Similarly, in order to simplify the disclosure and aid in understanding one or more aspects of the disclosure, in the above description of the exemplary embodiments of the disclosure, the technical features of the disclosure are sometimes single. It should be understood that it is summarized in embodiments, drawings or descriptions thereof. However, the method of this disclosure should not be construed as reflecting the intent that the claimed disclosure requires more features than those expressly recorded in each claim. More precisely, as reflected in the appended claims, the disclosed embodiments are less than all the technical features described in the single embodiment disclosed above. Accordingly, the claims of the detailed description are expressly incorporated therein into the detailed description, and each claim itself is regarded as a single embodiment of the present disclosure.

In addition, the objectives, technical solutions and beneficial effects of the present disclosure are illustrated in detail by the particular embodiments described above. However, it should be understood that the contents described so far are merely specific embodiments of the present disclosure and are not intended to limit the present disclosure. Any changes, equivalences and improvements made within the spirit and principles of this disclosure should be included within the scope of the protection of this disclosure.

1 Chamber body 11 Upper side wall 12 Lower side wall 13 Bottom wall 112 Insulation cylinder 14, 15, 18, 19 Adapter 2 Auxiliary plasma excitation source 21 Coil 22 RF power supply 3 Liner ring 31 First sub ring 32 Second sub ring 301A 1 radial through hole 302A 2nd radial through hole 30 gap 33 plane 331, 332 area 34 connector 35 upper liner 36 intermediate liner 37 lower liner 4 plasma excitation source 5 support assembly 6 deionized water 7 target 8 magnetron 9 drive Device 10 Base 20 Workspace to be processed 16 RF power supply 17 Press ring P part

Claims (16)

It ’s a liner assembly.
In the grounded liner ring, a plurality of shielding units are arranged in places along the circumferential direction of the liner ring, and the plurality of shielding units are formed on the inner peripheral surface of the liner ring and the outer peripheral surface of the liner ring. A gap formed between the two, and penetrating the gap, the gap is a plurality of first passages arranged in various places in the direction from the inner peripheral surface to the outer peripheral surface, and two adjacent ones each. A grounded liner with a plurality of second passages communicating with the first passage, and orthogonal projection of each of the two adjacent first passages on the inner peripheral surface of the liner ring. Is a liner assembly that is separated from each other. The liner ring comprises at least two nested sub-rings with different inner diameters, each sub-ring is grounded and, in terms of gaps, the first passages are respectively arranged correspondingly within the individual sub-rings. The liner assembly according to claim 1, wherein the through holes are radial through holes, and the second passage is an annular gap corresponding to each of the two individual subrings adjacent to each other. The depth-to-width ratio of each gap is
B / A + C / D> 5
Here, A is the width of the radial through hole in the circumferential direction of the sub ring, B is the radial thickness of the sub ring, and C is adjacent to each other in the same sub ring. The liner assembly according to claim 2, wherein the distance between the centers is the distance between the two individual radial through holes, and D is the radial thickness of the annular gap. The liner assembly according to claim 2, wherein the center-to-center distance between two adjacent radial through holes in the same sub-ring is 2 mm or more. The liner assembly according to claim 2, wherein the sub-ring has a radial thickness of 5 mm or less. The liner assembly according to claim 2, wherein the radial thickness of the annular gap is less than 10 mm. The liner assembly according to claim 2, wherein the width of the radial through hole in the circumferential direction of the sub ring is in the range of 0.5 mm to 10 mm. The liner assembly according to any one of claims 1 to 7, wherein the number of the gaps is several tens. The liner assembly according to claim 8, wherein the number of the gaps is 60 or more. Between two individual sub-rings adjacent to each other, each radial through-hole in one sub-ring corresponds to an intermediate position between the two radial through-holes in the other sub-ring and 2 in the other sub-ring. The liner assembly according to claim 2, wherein the one radial through hole is adjacent to the radial through hole in the one subring. The liner assembly according to claim 2, wherein each radial through hole extends in the axial direction of the sub ring. The liner assembly according to claim 11, wherein each radial through hole penetrates the sub ring in the axial direction of the sub ring. A reaction chamber with a chamber body, and further
A base for supporting the workpiece to be processed, which is placed in the chamber body, and
With a target located above the base and within the chamber body,
A reaction chamber comprising the liner assembly according to any one of claims 1 to 12, which is arranged inside the side wall of the chamber body and surrounds the inside. A coil wound along the outside of the side wall of the chamber body,
13. The reaction chamber according to claim 13, further comprising a radio frequency power source electrically connected to the coil. The length of each gap in the axial direction of the liner ring is longer than the axial length of the coil, and the orthogonal projection of the coil on the outer peripheral surface of the liner ring is the two ends of the gap in the axial direction of the liner ring. 14. The reaction chamber of claim 14, positioned between. A semiconductor processing apparatus comprising the reaction chamber according to any one of claims 13 to 15.

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