KR20080066888A - Multi-path inductively coupled plasma reactor - Google Patents

Abstract

A multi-path inductively coupled plasma reactor is provided to stably generate plasma of a high density by forming a plasma discharge loop in a multi-path. A multi-path inductively coupled plasma reactor includes a reactor body(110), a ring shape core(130), a first winding wire(132), and an insulation member(120). The reactor body has a gas inlet and a gas outlet. The reactor body has a multi discharge path which forms at least two plasma discharge loop. The ring shape core is coupled to the reactor body so that the plasma discharge loop is induced to at least two multi discharge path. The first winding wire is wound round the ring shape core The insulation member is formed on the reactor body to prevent an eddy current of the plasma discharge along the multi discharge path of the reactor body.

Description

MULTI-PATH INDUCTIVELY COUPLED PLASMA REACTOR}

In order to more fully understand the drawings used in the detailed description of the invention, a brief description of each drawing is provided.

1 is a perspective view of an inductively coupled plasma reactor according to a preferred embodiment of the present invention.

FIG. 2 is a vertical sectional view of the inductively coupled plasma reactor of FIG. 2.

3 is a partially enlarged view of the insulating member in the region A shown in FIG. 2.

4 is an enlarged view of a part of the ignition unit in the region B shown in FIG. 2.

5 is a horizontal cross-sectional view of the inductively coupled plasma reactor of FIG. 2.

6 is a cross-sectional view showing an example of an inductively coupled plasma reactor mounted on top of a substrate processing chamber.

7 is a cross-sectional view of an inductively coupled plasma reactor according to one variation.

8 to 10 are perspective views of inductively coupled plasma reactors according to another variant.

* Description of the symbols for the main parts of the drawings *

100: inductively coupled plasma reactor 110: reactor body

112: upper body 114: lower body

120: insulating member 122: first member

124: second member 140: ignition unit

142: ignition electrode 200: process chamber

The present invention relates to a plasma reactor for generating an active gas containing ions, free radicals, atoms, and molecules by plasma discharge, and performing plasma treatment of solids, powders, and gases with the active gas. An inductively coupled plasma reactor.

Plasma discharges are used for gas excitation to generate active gases containing ions, free radicals, atoms, molecules. The active gas is widely used in various fields and is typically used in various semiconductor manufacturing processes such as etching, deposition, and cleaning.

In recent years, wafers and LCD glass substrates for the manufacture of semiconductor devices are becoming larger. Therefore, there is a demand for a plasma source having a high controllability with respect to plasma ion energy and having a large-area processing capacity.

There are several plasma sources for generating plasma. Examples of the plasma sources include capacitively coupled plasma and inductively coupled plasma using radio frequency. Among them, inductively coupled plasma sources are known to be suitable for obtaining high-density plasma because they can increase ion density relatively easily with increasing radio frequency power.

However, the inductively coupled plasma method uses a high voltage driving coil because the energy coupled to the plasma is lower than that of the supplied energy. As a result, high ion energy may cause damage to the inner surface of the plasma reactor by ion bombardment. Damage to the internal surface of the plasma reactor by ion bombardment not only shortens the lifetime of the plasma reactor, but also has negative consequences of acting as a plasma treatment contaminant. When the ion energy is to be lowered, the energy bound to the plasma is low, so that frequent plasma discharge is turned off. Therefore, a problem arises that it is difficult to maintain stable plasma.

On the other hand, the use of remote plasma in the process using the plasma in the semiconductor manufacturing process is known to be very useful. For example, it is usefully used in cleaning process chambers and ashing processes for photoresist strips. However, as the size of the substrate to be processed increases, the volume of the process chamber is also increasing, and a plasma source capable of sufficiently remotely supplying high density active gas is required.

Accordingly, the present invention provides a multi-path inductively coupled plasma reactor that can be easily expanded to generate a large-capacity plasma, and can stably obtain a high-density plasma by increasing the transfer efficiency of inductively coupled energy coupled to the plasma. There is this.

One aspect of the present invention for achieving the above technical problem relates to a multi-path inductively coupled plasma reactor. An inductively coupled plasma reactor of the present invention comprises: a reactor body having a gas inlet and a gas outlet and having multiple discharge paths forming two or more plasma discharge loops; An annular core coupled to the reactor body and a primary winding wound around the annular core to induce a plasma discharge loop in at least two multiple discharge paths; And an insulating member configured in the reactor body to prevent eddy currents from being generated by the plasma discharge along the multiple discharge paths of the reactor body.

In one embodiment, the reactor body comprises an ignition unit, the ignition unit: a hole through the interior of the reactor body; An ignition electrode mounted in the hole; An electrical insulation member mounted between the ignition electrode and the reactor body for electrical insulation; A vacuum insulation member mounted between the ignition electrode and the reactor body for vacuum insulation; Ignition induction winding wound on an annular core; And a switch for electrically connecting or disconnecting the ignition induction winding and the ignition electrode.

In one embodiment, the ignition electrode is made of aluminum, the electrical insulation member is made of ceramic and the vacuum insulation member is made of O-ring.

In one embodiment, the reactor body has a structure in which two or more separate reactor bodies are fastened, and the insulating member is: an inner region of the reactor body for electrical insulation to a fastening portion of the two or more separate bodies. A first member disposed close to the first member; And a second member installed close to the outer region of the reactor body for vacuum insulation in the fastening portion of the two or more separate bodies.

In one embodiment, the first member is made of ceramic and the second member is made of O-ring.

In one embodiment, the reactor body includes a cooling channel to prevent overheating.

DETAILED DESCRIPTION In order to fully understand the present invention, the operational advantages of the present invention, and the objects achieved by the embodiments of the present invention, reference should be made to the accompanying drawings which illustrate preferred embodiments of the present invention and the contents described in the accompanying drawings. The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited by the embodiments described below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape of the elements in the drawings and the like are exaggerated to emphasize a clearer description. In understanding the drawings, it should be noted that like parts are intended to be represented by the same reference numerals as much as possible. And detailed description of known functions and configurations that are determined to unnecessarily obscure the subject matter of the present invention is omitted.

(Example)

Hereinafter, with reference to the accompanying drawings illustrating a preferred embodiment of the present invention, the multi-path inductively coupled plasma reactor of the present invention will be described in detail.

1 is a drawing of an inductively coupled plasma reactor according to a preferred embodiment of the present invention, and FIG. 2 is a cross-sectional view of the inductively coupled plasma reactor of FIG. 2.

1 and 2, an inductively coupled plasma reactor 100 according to a preferred embodiment of the present invention includes a reactor body 110 and an annular core 130 coupled thereto. The reactor body 110 includes an upper body 112 and a lower body 114, and an insulating member 120 is configured between the upper body 112 and the lower body 114. The upper body 112 is provided with a gas inlet 150, and the lower body 114 is provided with a gas outlet 152. The gas inlet 150 is connected to a gas supply source (not shown) that supplies a process gas. The gas outlet 152 is connected to the process chamber 200 (see FIG. 6) as described below.

The reactor body 110 has two openings 111, 113 on which the annular core 130 is mounted. The two openings 111 and 113 have a structure arranged side by side in parallel. Therefore, the reactor body 110 has a structure in which three multiple discharge paths 115, 116, and 117 are arranged side by side between the gas inlet 150 and the gas outlet 152. The two openings 111 and 113 are equipped with an annular core 130 wound around the primary winding 132. The annular core 130 is made of ferrite material but may be constructed of other alternative materials such as iron, air. The primary winding 132 is connected via an impedance matcher 136 to a power source 135 that supplies radio frequencies. The power supply 135 may be configured using a power supply capable of controlling the output voltage without a separate impedance matcher.

The reactor body 110 is made of a metal material such as, for example, aluminum, stainless steel or copper. Or coated metal, for example anodized aluminum or nickel plated aluminum. Or refractory metal. Alternatively, it is possible to rewrite the reactor body 110 with an insulating material such as quartz, ceramic, or other materials suitable for carrying out the intended plasma process.

3 is a partially enlarged view of the insulating member in the region A shown in FIG. 2.

Referring to FIG. 3, the insulating member 120 prevents the eddy current caused by the plasma discharge along the multiple discharge paths 115, 116, and 117 of the reactor body 110. The insulating member 120 is composed of first and second members 122 and 124. The first member 122 is installed close to the inner region of the reactor body 110 for electrical insulation at the fastening portion of the upper body 112 and the lower body 124. The first member 122 is constructed using a ceramic material but may be constructed using other alternative materials. The second member 124 is installed close to the outer region of the reactor body for vacuum insulation at the fastening portion of the upper body 112 and the lower body 124. The second member 124 is constructed using an o-ring for vacuum insulation.

FIG. 4 is an enlarged partial view of the ignition in the area B shown in FIG. 2, and FIG. 5 is a horizontal cross-sectional view of the multipath inductively coupled plasma reactor of FIG. 2.

4 and 5, the ignition unit 140 is mounted on one side of the upper body 112. The ignition unit 140 includes an ignition electrode 142 mounted in the hole 145 penetrated into the upper body 112. The ignition electrode 142 may be made of aluminum and may be made of other alternative metallic materials. An electrical insulation member 143 and a vacuum insulation member 144 for electrical insulation and vacuum cutting are mounted between the ignition electrode 142 and the upper body 112. The electrical insulation member 143 is constructed using a ceramic material and the vacuum insulation member 144 is constructed using an O-ring.

The annular core 130 is wound with an ignition induction winding 134. Ignition induction winding 134 and ignition electrode 142 are electrically connected by lead 147 and switch 146. The switch 146 electrically connects or disconnects the ignition induction winding 134 and the ignition electrode 142. The conductive wire 147 is connected to the ignition electrode 142 by the connecting bolt 141.

Again, referring to FIGS. 1 and 2, the reactor body 110 is provided with coolant inlets 160 and 162 for the inlet and outlet of the coolant. Although not shown in detail in the drawings, the cooling channel is configured as a wall of the reactor body 110. The cooling channel may be configured to surround the reactor body 110 as a whole, or may be configured around two openings 111 and 113.

In the inductively coupled plasma reactor 100 as described above, process gas is introduced through the gas inlet 150, and when a current is driven in the primary winding 132, plasma discharge is performed through the multiple discharge paths 115, 116, and 117. Two plasma discharge loops 170 and 172 are formed. Gas activated by the plasma discharge is supplied to the process chamber 200 (see FIG. 6) through the gas outlet 152. The gas is selected from the group comprising an inert gas, a reactive gas, and a mixed gas of an inert gas and a reactive gas. Or other gases suitable for other plasma processes may be selected.

6 is a cross-sectional view showing an example of an inductively coupled plasma reactor mounted on top of a substrate processing chamber.

Referring to FIG. 6, an inductively coupled plasma reactor 100 is mounted in the process chamber 200 to remotely supply an active gas by plasma discharge to the process chamber 200. The inside of the process chamber 200 is provided with a substrate support 240 on which the substrate 220 to be processed is disposed, and a gas outlet (not shown) connected to a vacuum pump (not shown) is provided. The process chamber 200 receives the active gas generated in the plasma reactor 100 into the chamber 210 through the inlet 230 to perform a predetermined plasma treatment. The plasma treatment is any one of semiconductor manufacturing processes such as, for example, deposition, etching, ashing, and cleaning for the manufacture of semiconductor devices.

7 is a cross-sectional view of an inductively coupled plasma reactor according to one variation.

Referring to FIG. 7, one variation of the inductively coupled plasma reactor 100a is identical in that the assembly structure of the reactor body 110a and the arrangement structure of the multiple discharge paths 115a, 116a, and 117a are only different from those described above. Repeated description of the configuration is omitted.

Inductively coupled plasma reactor (100a) the reactor body (110a) is composed of three bodies, the upper body 112a, the lower body (114a), and the intermediate body (118a). The reactor body 110 has a structure in which two openings 111a and 113a on which the annular core 130 is mounted are arranged in parallel up and down. Therefore, the reactor body 110a has a structure in which three multiple discharge paths 115a, 116a, and 117a are positioned up and down side by side between the gas inlet 150 and the gas outlet 152.

Two openings 111a and 113a are mounted with an annular core 130 wound around a primary winding 132. The three bodies 112a, 114a, 118a are vacuum and electrically insulated by the insulating member 120. When the process gas is introduced through the gas inlet 150 and a current is driven in the primary winding 132, plasma discharge is performed through the multiple discharge paths 115a, 116a, and 117a to form two plasma discharge loops 174 and 176. Is formed.

As can be seen in the inductively coupled plasma reactor 100a of one variation, the coupling structure of the openings 111a and 112a of the reactor body 110a and the annular core 130 mounted thereto can be variously modified, and the number thereof It can be extended in various ways.

8 to 10 are perspective views of inductively coupled plasma reactors according to another variant.

First, referring to FIG. 8, the configuration of another modified inductively coupled plasma reactor 100b has the same configuration as the overall inductively coupled plasma reactors described above. However, the reactor body 110b has a structure in which the upper body 112b and the lower body 114b are assembled through the insulating member 120, and three openings 111b, 113b, and 119 are arranged side by side in parallel. . In addition, the three openings 111b, 113b, and 119 are equipped with a double annular core 130b having two annular structures having a 'Japanese' shape. Two primary windings 132-1, 132-2 are mounted to the dual annular core 130b. Thus, four multiple discharge paths and three plasma discharge loops are configured inside the reactor body 110b.

Referring to FIG. 9, another modified inductively coupled plasma reactor 100c also has the same configuration as the above-described examples. However, the inductively coupled plasma reactor 100c of this modification has a reactor body 100c composed of an upper body 112c, a lower body 114c, and an intermediate body 118c. An insulating member 120 is provided between the three bodies 112c, 114c, and 118c, respectively. Two upper openings 111c and 113c are formed in the upper body 112c and the middle body 118c, and two other lower openings 111c 'and 113c' are formed in the middle body 118c and the lower body 114c. Is formed. The upper openings 111c and 113c and the lower openings 111c 'and 113c' are equipped with annular cores 130-1 and 130-2 having primary windings 132-1 and 132-2, respectively. Thus, the reactor body 110c is provided with three multiple discharge paths at the top and the bottom, respectively, so that four plasma discharge loops are formed as a whole.

Referring to FIG. 10, another modified inductively coupled plasma reactor 100d also has the same configuration as the above-described examples. However, the inductively coupled plasma reactor 100d of this modification includes a reactor body 100c composed of an upper body 112d, a lower body 114d, and an intermediate body 118d. An insulating member 120 is provided between the three bodies 112d, 114d, and 118d, respectively. Two pairs of upper openings 111d-1 and 113d-1 (111d-2 and 113d-2) are formed in the upper body 112d and the intermediate body 118d, and the intermediate body 118d and the lower body 114d. ), Two other lower openings are formed. A total of four pairs of openings 111d-1, 113d-1, 111d-2, 113d-2, 111d-3, 113d-3, 111d-4, 113d-4, 111d-3, 113d- 3) 111d-4, 113d-4 has an annular core 130-1, 130-2, 130-3, 130- with primary windings 132-1, 132-2, 132-3, 132-4. 4) are mounted respectively. Thus, the reactor body 110d is provided with five multiple discharge paths at the top and the bottom, respectively, so that eight plasma discharge loops are formed as a whole.

Embodiments of the multi-path inductively coupled plasma reactor of the present invention described above are merely exemplary, and various modifications and equivalent other embodiments may be made by those skilled in the art to which the present invention pertains. You will know well. Therefore, it is to be understood that the present invention is not limited to the specific forms mentioned in the above description. Therefore, the true technical protection scope of the present invention should be defined by the technical spirit of the appended claims, and the present invention is intended to cover all modifications, equivalents, and substitutes within the spirit and scope of the present invention as defined by the appended claims. It should be understood to include.

According to the multi-path inductively coupled plasma reactor of the present invention as described above, multiple plasma discharge loops in which the annular core is mounted are formed in multiple to form multiple plasma discharge loops. Therefore, it is easy to expand to generate a large amount of plasma, and even if the volume of the reactor body is increased, high density plasma can be stably generated by increasing the transfer efficiency of inductive coupling energy.

Claims (6)

A reactor body having a gas inlet and a gas outlet, the reactor body having multiple discharge paths forming at least two plasma discharge loops; An annular core coupled to the reactor body and a primary winding wound around the annular core to induce a plasma discharge loop in at least two multiple discharge paths; And A multi-path inductively coupled plasma reactor comprising an insulating member configured in the reactor body to prevent eddy currents caused by plasma discharge along the multiple discharge paths of the reactor body. The method of claim 1, wherein the reactor body comprises an ignition unit, the ignition unit: A hole penetrated into the reactor body; An ignition electrode mounted in the hole; An electrical insulation member mounted between the ignition electrode and the reactor body for electrical insulation; A vacuum insulation member mounted between the ignition electrode and the reactor body for vacuum insulation; Ignition induction winding wound on an annular core; And A multi-path inductively coupled plasma reactor comprising a switch for electrically connecting or disconnecting an ignition induction winding and an ignition electrode. 3. The multi-path inductively coupled plasma reactor of claim 2, wherein the ignition electrode is aluminum, the electrical insulation member is ceramic, and the vacuum insulation member is an O-ring. According to claim 1, wherein the reactor body has a structure in which the reactor body is separated into two or more fastened, The insulation member is: A first member installed close to an inner region of the reactor body for electrical insulation in a fastening portion of the two or more separated bodies; And A multi-path inductively coupled plasma reactor comprising a second member installed close to an outer region of the reactor body for vacuum insulation at a fastening portion of two or more separate bodies. 5. The multi-path inductively coupled plasma reactor of claim 4, wherein the first member is ceramic and the second member is o-ring. The multi-path inductively coupled plasma reactor of claim 1, wherein the reactor body comprises a cooling channel to prevent overheating.

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