JP4219925B2 - Magnetron sputtering equipment - Google Patents

Description

  The present invention relates to a magnetron sputtering apparatus for forming a thin film in a vacuum by a magnetron sputtering method, and more particularly to a magnetron sputtering apparatus capable of accelerating an ionization reaction in plasma and increasing an ion current to a substrate.

As shown in FIG. 13, a conventional magnetron sputtering apparatus for forming a thin film in a vacuum by a magnetron sputtering method includes a magnetron evaporation source 34 including an inner magnetic pole 31, a ring-shaped outer magnetic pole 32, and a target 33. It arrange | positions so that the outer periphery of the board | substrate 36 in the chamber 35 may be enclosed, and the polarity of each outer magnetic pole 32 of the adjacent magnetron evaporation source 34 mutually differs, and it connects between the outer magnetic poles 32 of the adjacent magnetron evaporation source 34 one by one. The magnetic field lines 38 are generated in such a manner that the magnetic field lines 38 surround the outer periphery of the substrate 36, thereby confining the plasma generated by the glow discharge around the substrate 36, and promoting ionization of metal atoms evaporated from the magnetron evaporation source 34, There is one in which a high-density metal thin film is formed on the substrate 36.
Japanese translation of PCT publication No. 5-505215

However, conventionally, in order to generate the magnetic lines 38 so as to sequentially connect the outer magnetic poles 32 of the magnetron evaporation sources 34 and surround the outer periphery of the substrate 36 by the magnetic lines 38, the outer magnetic poles 32 of the adjacent magnetron evaporation sources 34 are connected to each other. Therefore, two types of magnetron evaporation sources having different polarities between the outer magnetic pole 32 and the inner magnetic pole 31 are required.
Conventionally, since the magnetic field surrounding the substrate 36 is formed only by the magnetic field lines 38 that connect the outer magnetic poles 32 of the magnetron evaporation source 34, the shape and strength of the magnetic field depend on the number and arrangement of the magnetron evaporation sources 34. Conversely, in order to obtain a desired magnetic field shape and intensity necessary to sufficiently confine the plasma around the substrate 36, the number and arrangement of the magnetron evaporation sources 34 are restricted. For example, since a desired magnetic field cannot be obtained unless adjacent magnetron evaporation sources 34 are arranged within a certain distance, a large number of magnetron evaporation sources 34 must be arranged in a large apparatus for processing a large substrate 36. It was.

  Furthermore, once the arrangement of the magnetron evaporation source 34 is determined, the shape of the magnetic field is also determined and is difficult to change. By forming the magnetic pole of the magnetron evaporation source 34 with a coil instead of a permanent magnet, it is possible to change the shape of the magnetic field even in the prior art, but arranging a plurality of coils in the magnetron evaporation source 34 is not possible with the magnetron evaporation source 34. There was a problem of increasing the size and complicating the structure.

  In the present invention, in view of the above problems, a lot of plasma generated from the magnetron evaporation source exists around the substrate as in the prior art, and the ionization of the metal atoms evaporated from the magnetron evaporation source is promoted and further formed on the substrate. In the sputtering apparatus that can improve the adhesion and the film structure with the substrate by receiving more collisions of ions, the magnetron evaporation source needs only one magnetron magnetic field configuration, the number of magnetron evaporation sources, An object is to be able to form a desired confining magnetic field regardless of the arrangement and to easily change the shape of the confining magnetic field.

The technical means of the present invention for solving this technical problem is that a plurality of magnetron evaporation sources 3 are provided on the outer periphery of the substrate 2, and metal atoms or ions evaporated from the magnetron evaporation source 3 are attached to the substrate 2. In a magnetron sputtering apparatus that forms a thin film on the substrate 2,
An auxiliary magnetic pole 9 having the same polarity as the polarity of the outer magnetic pole 4 of the magnetron evaporation source 3 is arranged at an intermediate position between the adjacent magnetron evaporation sources 3, and the polarities of the outer magnetic poles 4 of the respective magnetron evaporation sources 3 are all the same. As a result, a repulsive magnetic field is generated near the middle between the outer magnetic pole 4 of each magnetron evaporation source 3 and the auxiliary magnetic pole 9 adjacent to the outer magnetic pole 4, and the inner magnetic pole 5 of each magnetron evaporation source 3. And a magnetic field line that connects the auxiliary magnetic pole 9 adjacent to the inner magnetic pole 5 to each other.

  Accordingly, a magnetic field having a shape surrounding the substrate 2 is formed by the magnetron evaporation source 3 and the auxiliary magnetic pole 4 in the same manner as described above, and the adhesion force and film structure of the film formed on the substrate 2 can be improved. The magnetron magnetic pole itself of the magnetron evaporation source 3 may be of the same polarity, and a magnetic field having a shape surrounding the substrate 2 can be reliably formed regardless of the number of magnetron evaporation sources 3 mounted. it can.

Another technical means of the present invention is a magnetron sputtering apparatus in which metal atoms or ions evaporated from the magnetron evaporation source 3 are attached to the substrate 2 to form a thin film on the substrate 2.
One magnetron evaporation source 3 is provided on the outer periphery of the substrate 2, and one or a plurality of auxiliary magnetic poles 9 have the same polarity between adjacent auxiliary magnetic poles 9, and the outer magnetic pole 4 of the adjacent magnetron evaporation source 3. Between the outer magnetic pole 4 of the magnetron evaporation source 3 and the auxiliary magnetic pole 9 adjacent to the outer magnetic pole 4 and between the adjacent auxiliary magnetic poles 9. A magnetic field repelling near the middle is generated, and magnetic lines of force connecting the inner magnetic pole 5 of the magnetron evaporation source 3 and the auxiliary magnetic pole 9 adjacent to the inner magnetic pole 5 are generated.

Accordingly, a magnetic field having a shape surrounding the substrate 2 is formed by one magnetron evaporation source 3 and one or a plurality of auxiliary magnetic poles 4, and the adhesion force and film structure of the film formed on the substrate 2 can be improved. . The number of magnetron evaporation sources 3 can be reduced to one, and a magnetic field having a shape surrounding the substrate 2 can be reliably formed.
Further, according to another technical means of the present invention, a plurality of magnetron evaporation sources 3 are provided on the outer periphery of the substrate 2, and metal atoms or ions evaporated from the magnetron evaporation source 3 are attached to the substrate 2 to adhere to the substrate 2. In a magnetron sputtering apparatus designed to form a thin film,
Between adjacent magnetron evaporation sources 3, one or a plurality of auxiliary magnetic poles 9 have the same polarity between the adjacent auxiliary magnetic poles 9, and the polarity between the outer magnetic pole 4 and the auxiliary magnetic pole 9 of the adjacent magnetron evaporation source 3. Are made the same, and the polarities of the outer magnetic poles 4 of the respective magnetron evaporation sources 3 are all the same, whereby the outer magnetic pole 4 of each magnetron evaporation source 3 and the auxiliary magnetic pole adjacent to the outer magnetic pole 4 are arranged. 9 and a magnetic field that repels in the vicinity of the middle between adjacent auxiliary magnetic poles 9, and the inner magnetic pole 5 of each magnetron evaporation source 3 and the auxiliary magnetic pole 9 adjacent to the inner magnetic pole 5 are mutually connected. It is in the point which produces the magnetic force line tied to.

  Therefore, since the auxiliary magnetic pole 4 is provided, the magnetron magnetic pole itself of the magnetron evaporation source 3 may be of the same type, and the shape surrounding the substrate 2 is not affected by the number of magnetron evaporation sources 3 mounted. A magnetic field can be reliably formed, and a high-density thin film can be formed on the substrate 2 by increasing the number of metal atom ions toward the substrate 2 as described above.

Another technical means of the present invention is that the magnetron evaporation source 3 is a non-equilibrium magnetron evaporation source 3 in which the strength of the outer magnetic pole 4 forming the magnetron is stronger than the strength of the inner magnetic pole 5. .
Accordingly, the lines of magnetic force leaking from the magnetron evaporation source 3 itself to the auxiliary magnetic pole 9 increase, and the strength of the magnetic field surrounding the substrate 2 can be increased.

Another technical means of the present invention is that the auxiliary magnetic pole 9 is composed of a permanent magnet and is movable in a direction in which the auxiliary magnetic pole 9 is in contact with and away from the substrate 2.
Therefore, even if the arrangement of the magnetron evaporation source 3 is fixed, the shape and intensity of the entire confined magnetic field can be changed by the auxiliary magnetic pole 9, and the optimum magnetic field shape can be obtained according to the size of the substrate 2 to be arranged. Can be set.

Another technical means of the present invention is that the auxiliary magnetic pole 9 is formed of a coil, and the magnetic field shape and strength can be changed by changing the coil current.
Therefore, the confinement magnetic field can be adjusted by changing the coil current of the auxiliary magnetic pole 9 to form an optimum magnetic field according to the size of the substrate 2 to be arranged. Another technical means of the present invention is that the auxiliary magnetic pole 9 is disposed on the atmosphere side of the vacuum chamber 1 in which the substrate 2 is stored.

  Therefore, the problem of cooling of the auxiliary magnetic pole 9 and the vacuum seal can be eliminated, and the apparatus configuration can be simplified.

  According to the present invention, the magnetron evaporation source 3 only needs to have one type of magnetron magnetic field configuration. A desired confined magnetic field can be formed regardless of the number and arrangement of the magnetron evaporation sources 3. In addition, the shape of the confined magnetic field can be easily changed.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 shows a magnetron sputtering apparatus equipped with four types of non-equilibrium (unbalanced) magnetron sputtering evaporation source magnetron as a typical embodiment of the present invention.
In FIG. 1, a substrate (deposition object) 2 is provided in the center of the vacuum chamber 1, and four magnetron evaporation sources 3 are provided in the vacuum chamber 1 so as to surround the outer periphery of the substrate 2. Each magnetron evaporation source 3 has the same configuration, and includes a ring-shaped outer magnetic pole 4, an inner magnetic pole 5 fitted in the center of the outer magnetic pole 4, and a target 6 made of a source material. Each of the magnetron evaporation sources 3 is composed of an unbalanced (unbalanced) magnetron evaporation source in which the strength of the outer magnetic pole 4 forming the magnetron is stronger than the strength of the inner magnetic pole 5.

  Each magnetron evaporation source 3 is annularly arranged on the outer periphery of the substrate 2 at equal intervals, and is located at an equal interval from the substrate 2. Auxiliary magnetic poles 9 are respectively provided at the central positions of the adjacent magnetron evaporation sources 3. The auxiliary magnetic pole 9 is composed of a permanent magnet and is movable in a direction in which the auxiliary magnetic pole 9 is in contact with or separated from the substrate 2. Each auxiliary magnetic pole 9 is arranged to have a polarity different from the polarity of the outer magnetic pole 4 of the magnetron evaporation source 3 so that the outer magnetic pole 4 and each auxiliary magnetic pole 9 of each magnetron evaporation source 3 are connected alternately one after another. Magnetic field lines 11 are generated, whereby a magnetic field having a shape surrounding the substrate 2 is formed by the magnetron evaporation source 3 and the auxiliary magnetic pole 4, and the plasma generated from the magnetron evaporation source 3 can be confined around the substrate 3. .

  According to the above-described embodiment, an inert gas such as argon is injected into the vacuum chamber 1, and a negative voltage is applied to each magnetron evaporation source 3 from the sputtering power supply (not shown) to the grounded vacuum chamber 1. Then, glow discharge occurs between the vacuum chamber 1 and each magnetron evaporation source 3, and plasma (electrons and argon ions) is generated in the vacuum chamber 1. Argon ions existing in the vacuum chamber 1 collide with the target 6 of the magnetron evaporation source 3 made of the source material, and thereby, metal atoms are evaporated (sputtered) from the magnetron evaporation source 3 (target 6), and the substrate 2 To form a thin film. Some metal atoms are ionized in the vacuum chamber 1 and adhere to the substrate 2 that is electrically negatively biased with high energy.

  At this time, since the auxiliary magnetic pole 9 having a polarity different from the polarity of the outer magnetic pole 4 constituting the magnetron magnetic pole 4 is disposed at an intermediate position between the plurality of magnetron evaporation sources 3, the outer magnetic pole 4 of each magnetron evaporation source 3 is arranged. Magnetic field lines 11 are generated so as to connect the auxiliary magnetic poles 9 in order, and as a result, a magnetic field having a shape surrounding the substrate 2 is formed by the magnetron evaporation source 3 and the auxiliary magnetic poles 4 as in the prior art, and the plasma ( Electrons and argon ions) can be confined around the substrate 2. Accordingly, a large amount of plasma (argon ions) generated from the magnetron evaporation source 3 is present around the substrate 2, and ionization of metal atoms evaporated from the magnetron evaporation source 3 is promoted, so that it is formed on the substrate 2. By receiving more collisions of argon ions and metal ions with the film, the adhesion between the film and the substrate 2 and the film structure of the film are improved.

Further, since the auxiliary magnetic pole 9 is provided between the magnetron evaporation sources 3, the magnetron magnetic poles themselves of the magnetron evaporation source 3 may be of the same type, and are not affected by the number of magnetron evaporation sources 3 to be mounted. Can be reliably formed.
Further, by using an unbalanced (unbalanced) magnetron evaporation source in which the strength of the outer magnetic pole 4 forming the magnetron is stronger than that of the inner magnetic pole 5 as the magnetron sputter evaporation source 3, The lines of magnetic force that leak to the auxiliary magnetic pole 9 increase, and the strength of the magnetic field that surrounds the substrate 2 can be increased.
Further, the auxiliary magnetic pole 9 is formed of a permanent magnet, and its position is variable with respect to the direction of the substrate 3, so that the shape and strength of the entire confined magnetic field can be changed even when the arrangement of the magnetron evaporation source 3 is fixed. It can be set to an optimum magnetic field shape according to the size of the substrate 2 to be arranged.

FIG. 2 shows the measurement results of the bias current of the substrate 2 when argon gas plasma is formed with and without the auxiliary magnetic pole 9 in the embodiment shown in FIG. From this measurement result, the bias current of the substrate 3 was increased by the arrangement of the auxiliary magnetic pole 9, and the magnetic field confinement effect was confirmed.
FIG. 3 shows another embodiment, in which two magnetron evaporation sources 3 are provided on the outer periphery of the substrate 3, and the magnetron evaporation sources 3 are arranged so as to correspond to the radial direction centering on the substrate 2 and are adjacent to each other. Three auxiliary magnetic poles 9 (an auxiliary magnetic pole 9a, an auxiliary magnetic pole 9b, and an auxiliary magnetic pole 9a) are arranged at equal intervals between the magnetron evaporation sources 3, and each of the magnetron evaporation sources 3 and each of the auxiliary magnetic poles 9 Surrounds the perimeter. Of the auxiliary magnetic poles 9, the auxiliary magnetic pole 9 a adjacent to the magnetron evaporation source 3 has a different polarity from the outer magnetic pole 4 of the magnetron evaporation source 3, and the auxiliary magnetic pole 9 b on the center side is adjacent to the magnetron evaporation source 3. The polarity is different from that of the magnetic pole 9a. Accordingly, a magnetic flux is generated so as to connect the outer magnetic pole 4 and the auxiliary magnetic pole 9 of each magnetron evaporation source 3 in order, and the outer periphery of the substrate 2 is surrounded by the magnetic flux. Each magnetron evaporation source 3 and each auxiliary magnetic pole 9 form magnetic field lines 11 having a shape surrounding the substrate 2. Other points are the same as those in the above embodiment.

In FIG. 3, three auxiliary magnetic poles 9 are arranged between the magnetron evaporation sources 3, but the number of auxiliary magnetic poles 9 may be an odd number of auxiliary magnetic poles 9a and auxiliary magnetic poles 9b arranged alternately. For example, the number of auxiliary magnetic poles 9 may be increased. In this case, the plasma confinement effect can be increased as the number of the auxiliary magnetic poles 9 is increased and the interval between the auxiliary magnetic poles 9 is reduced.
FIG. 4 shows another embodiment, in which one magnetron evaporation source 3 and an odd number of auxiliary magnetic poles 9 are provided on the outer periphery of the substrate 2, and one magnetron evaporation source 3 and an odd number of magnetron evaporation sources 3 are provided. The auxiliary magnetic pole 9 surrounds the outer periphery of the substrate 2. Among the auxiliary magnetic poles 9, the auxiliary magnetic pole 9a adjacent to the magnetron evaporation source 3 has a polarity different from that of the outer magnetic pole 4 of the magnetron evaporation source 3, and among the auxiliary magnetic poles 9, the auxiliary magnetic pole 9a and the auxiliary magnetic pole 9b are adjacent to each other. The polarities are different. Therefore, by alternately arranging the magnetron evaporation source 3 and the auxiliary magnetic poles 9a and 9b having different polarities, the magnetic flux 11 is generated so as to sequentially connect the outer magnetic pole 4 and the auxiliary magnetic poles 9 of each magnetron evaporation source 3. The magnetic flux 11 surrounds the outer periphery of the substrate 2 to form a confined magnetic field. Other points are the same as those in the above embodiment.

  FIG. 5 shows another embodiment, and in each of the embodiments of FIGS. 1, 3, and 4, a permanent magnet is used as the auxiliary magnetic pole 9, but in the case of FIG. An air-core coil is used and excited so as to have a polarity different from that of the outer magnetic pole 4 of the magnetron evaporation source 3. Also in this case, similarly to the embodiment of FIG. 1, the magnetic lines 11 are generated so that the outer magnetic poles 4 and the auxiliary magnetic poles 9 of the magnetron evaporation sources 3 are alternately connected to each other, and the magnetic lines 11 generate the substrate 2 It is designed to surround the outer periphery. In addition, since an air-core coil is used as the auxiliary magnetic pole 4, it is possible to easily change the magnetic field shape by changing the exciting current, and the confinement magnetic field is adjusted, and the optimum according to the size of the substrate 2 to be arranged, etc. A strong magnetic field can be formed.

  FIG. 6 shows another embodiment, in which an auxiliary magnetic pole 9 disposed between the magnetron evaporation sources 3 is disposed on the atmosphere side of the vacuum chamber 1. Further, the distance between the magnetron evaporation source 3 and the substrate 2 and the distance between the auxiliary magnetic pole 9 and the substrate 2 are approximately the same so that the confined magnetic field formed is as uniform as possible with respect to the substrate 2. It is configured as follows. As the auxiliary magnetic pole 9, an air-core coil can be used in addition to the permanent magnet shown in FIG. 6, but in any case, the cooling mechanism for the auxiliary magnetic pole 9 is compared with the embodiment shown in FIGS. In addition, the feedthrough for introducing the air core coil wiring into the vacuum chamber 1 can be omitted, and the apparatus configuration can be simplified.

In the case of this embodiment, by arranging the auxiliary magnetic pole 9 outside the vacuum chamber 1, problems of cooling of the auxiliary magnetic pole and vacuum sealing can be eliminated, and the device configuration can be simplified.
FIG. 7 shows a magnetron sputtering apparatus equipped with four types of non-equilibrium (unbalanced) type magnetron sputter evaporation source magnetrons as another typical embodiment of the present invention.
In FIG. 7, a substrate (deposition object) 2 is provided in the center of the vacuum chamber 1, and four magnetron evaporation sources 3 are provided in the vacuum chamber 1 so as to surround the outer periphery of the substrate 2. Each magnetron evaporation source 3 has the same configuration, and includes a ring-shaped outer magnetic pole 4, an inner magnetic pole 5 fitted in the center of the outer magnetic pole 4, and a target 6 made of a source material. Each of the magnetron evaporation sources 3 is composed of an unbalanced (unbalanced) magnetron evaporation source in which the strength of the outer magnetic pole 4 forming the magnetron is stronger than the strength of the inner magnetic pole 5.

  Each magnetron evaporation source 3 is annularly arranged on the outer periphery of the substrate 2 at equal intervals, and is located at an equal interval from the substrate 2. Auxiliary magnetic poles 9 are respectively provided at the central positions of the adjacent magnetron evaporation sources 3. The auxiliary magnetic pole 9 is composed of a permanent magnet and is movable in a direction in which the auxiliary magnetic pole 9 is in contact with or separated from the substrate 2. Each auxiliary magnetic pole 9 is arranged to have the same polarity as that of the outer magnetic pole 4 of the magnetron evaporation source 3.

  According to the above-described embodiment, an inert gas such as argon is injected into the vacuum chamber 1, and a negative voltage is applied to each magnetron evaporation source 3 from the sputtering power supply (not shown) to the grounded vacuum chamber 1. Then, glow discharge occurs between the vacuum chamber 1 and each magnetron evaporation source 3, and plasma (electrons and argon ions) is generated in the vacuum chamber 1. Argon ions existing in the vacuum chamber 1 collide with the target 6 of the magnetron evaporation source 3 made of the source material, and thereby, metal atoms are evaporated (sputtered) from the magnetron evaporation source 3 (target 6), and the substrate 2 To form a thin film. Some metal atoms are ionized in the vacuum chamber 1 and adhere to the substrate 2 that is electrically negatively biased with high energy.

  At this time, since the auxiliary magnetic pole 9 having the same polarity as the polarity of the outer magnetic pole 4 constituting the magnetron magnetic pole is disposed at an intermediate position between the plurality of magnetron evaporation sources 3, the outer magnetic pole 4 of each magnetron evaporation source 3 is disposed. In addition, a repulsive magnetic field is generated in the vicinity of the middle of each auxiliary magnetic pole 9, but the magnetic field lines are concentrated in this portion, so that the plasma (electrons and argon ions) generated by the glow discharge is surrounded by the mirror effect around the substrate 2. Can be trapped in. Further, since the magnetic fields of the adjacent magnetron evaporation source 3 and auxiliary magnetic pole 9 repel each other, the magnetic field in front of the evaporation source 3 swells further toward the substrate 2, and connects the inner magnetic pole 5 of the evaporation source 3 and the auxiliary magnetic pole 9. Since magnetic lines of force are also generated, the plasma spreads in the direction of the substrate 2 and high-density plasma is obtained at the substrate 2 position. Accordingly, a large amount of plasma (argon ions) generated from the magnetron evaporation source 3 is present around the substrate 2, and ionization of metal atoms evaporated from the magnetron evaporation source 3 is promoted, so that it is formed on the substrate 2. By receiving more collisions of argon ions and metal ions with the film, the adhesion between the film and the substrate 2 and the film structure of the film are improved.

Further, since the auxiliary magnetic pole 9 is provided between the magnetron evaporation sources 3, the magnetron magnetic poles themselves of the magnetron evaporation source 3 may be of the same type, and are not affected by the number of magnetron evaporation sources 3 to be mounted. Can be reliably formed.
Further, by using an unbalanced (unbalanced) magnetron evaporation source in which the strength of the outer magnetic pole 4 forming the magnetron is stronger than that of the inner magnetic pole 5 as the magnetron sputter evaporation source 3, The lines of magnetic force that leak to the auxiliary magnetic pole 9 increase, and the strength of the magnetic field that surrounds the substrate 2 can be increased.
Further, the auxiliary magnetic pole 9 is formed of a permanent magnet, and its position is variable with respect to the direction of the substrate 3, so that the shape and strength of the entire confined magnetic field can be changed even when the arrangement of the magnetron evaporation source 3 is fixed. It can be set to an optimum magnetic field shape according to the size of the substrate 2 to be arranged.

  In the embodiment shown in FIG. 7, when the auxiliary magnetic pole 9 is not provided, the auxiliary magnetic pole 9 having a polarity different from the polarity of the outer magnetic pole 4 constituting the magnetron magnetic pole of the magnetron evaporation source 3 is arranged. The measurement result of the bias current of the substrate 2 when argon gas plasma is formed in the case where the auxiliary magnetic pole 9 having the same polarity as that of the outer magnetic pole 4 constituting the magnetron magnetic pole of the magnetron evaporation source 3 is arranged is shown. Yes. From this measurement result, the bias current of the substrate 3 was greatly increased by the arrangement of the auxiliary magnetic poles 9 having the same polarity, and a large magnetic field confinement effect was confirmed.

  FIG. 9 shows another embodiment, in which two magnetron evaporation sources 3 are provided on the outer periphery of the substrate 3, and the magnetron evaporation sources 3 are arranged so as to correspond to the radial direction centering on the substrate 2 and are adjacent to each other. Three auxiliary magnetic poles 9 are arranged at equal intervals between the magnetron evaporation sources 3 and each magnetron evaporation source 3 and each auxiliary magnetic pole 9 surround the outer periphery of the substrate 2. Of the auxiliary magnetic poles 9, the auxiliary magnetic pole 9 adjacent to the magnetron evaporation source 3 has the same polarity as the outer magnetic pole 4 of the magnetron evaporation source 3, and the auxiliary auxiliary magnetic pole 9 on the center side is adjacent to the magnetron evaporation source 3. It has the same polarity as the magnetic pole 9. Therefore, a repulsive magnetic field is generated in the vicinity of the middle between the outer magnetic pole 4 and each auxiliary magnetic pole 9 of each magnetron evaporation source 3, but the magnetic field lines are concentrated in this portion, so that plasma generated by glow discharge by the mirror effect ( Electrons and argon ions) can be confined around the substrate 2. Further, since the magnetic fields of the adjacent magnetron evaporation source 3 and auxiliary magnetic pole 9 repel each other, the magnetic field in front of the evaporation source 3 swells further toward the substrate 2, and connects the inner magnetic pole 5 of the evaporation source 3 and the auxiliary magnetic pole 9. Since magnetic lines of force are also generated, the plasma spreads in the direction of the substrate 2 and high-density plasma is obtained at the substrate 2 position. Other points are the same as those in the above embodiment.

In FIG. 9, three auxiliary magnetic poles 9 are disposed between the magnetron evaporation sources 3, but the number of auxiliary magnetic poles 9 may be further increased. In this case, the plasma confinement effect can be increased as the number of the auxiliary magnetic poles 9 is increased and the interval between the auxiliary magnetic poles 9 is reduced.
FIG. 10 shows another embodiment, in which one magnetron evaporation source 3 is provided on the outer periphery of the substrate 2 and a plurality of auxiliary magnetic poles 9 are provided, and one magnetron evaporation source 3 and a plurality of magnetron evaporation sources 3 are provided. The auxiliary magnetic pole 9 surrounds the outer periphery of the substrate 2. Of the auxiliary magnetic poles 9, the auxiliary magnetic pole 9 adjacent to the magnetron evaporation source 3 has the same polarity as the outer magnetic pole 4 of the magnetron evaporation source 3, and the adjacent auxiliary magnetic poles 9 also have the same polarity. Therefore, by arranging the magnetron evaporation source 3 and the auxiliary magnetic pole 9 having the same polarity, a repulsive magnetic field is generated near the middle between the outer magnetic pole 4 and each auxiliary magnetic pole 9 of each magnetron evaporation source 3. Since magnetic field lines are concentrated, plasma (electrons and argon ions) generated by glow discharge can be confined around the substrate 2 by the mirror effect. Further, since the magnetic fields of the adjacent magnetron evaporation source 3 and auxiliary magnetic pole 9 repel each other, the magnetic field in front of the evaporation source 3 swells further toward the substrate 2, and connects the inner magnetic pole 5 of the evaporation source 3 and the auxiliary magnetic pole 9. Since magnetic lines of force are also generated, the plasma spreads in the direction of the substrate 2 and high-density plasma is obtained at the substrate 2 position. Other points are the same as those in the above embodiment.

  FIG. 11 shows another embodiment, and in each of the embodiments of FIGS. 7, 9, and 10, a permanent magnet is used as the auxiliary magnetic pole 9, but in the case of FIG. An air-core coil is used and excited so as to have the same polarity as the outer magnetic pole 4 of the magnetron evaporation source 3. Also in this case, as in the case of the embodiment of FIG. 7, a repulsive magnetic field is generated near the middle of the outer magnetic pole 4 and each auxiliary magnetic pole 9 of each magnetron evaporation source 3, but the magnetic field lines are concentrated in this part. Therefore, plasma (electrons and argon ions) generated by glow discharge can be confined around the substrate 2 by the mirror effect. Further, since the magnetic fields of the adjacent magnetron evaporation source 3 and auxiliary magnetic pole 9 repel each other, the magnetic field in front of the evaporation source 3 swells further toward the substrate 2, and connects the inner magnetic pole 5 of the evaporation source 3 and the auxiliary magnetic pole 9. Since magnetic lines of force are also generated, the plasma spreads in the direction of the substrate 2 and high-density plasma is obtained at the substrate 2 position. In addition, since an air-core coil is used as the auxiliary magnetic pole 4, it is possible to easily change the magnetic field shape by changing the exciting current, and the confinement magnetic field is adjusted, and the optimum according to the size of the substrate 2 to be arranged, etc. A strong magnetic field can be formed.

  FIG. 12 shows another embodiment, and an auxiliary magnetic pole 9 disposed between the magnetron evaporation sources 3 is disposed on the atmosphere side of the vacuum chamber 1. Further, the distance between the magnetron evaporation source 3 and the substrate 2 and the distance between the auxiliary magnetic pole 9 and the substrate 2 are approximately the same so that the confined magnetic field formed is as uniform as possible with respect to the substrate 2. It is configured as follows. As the auxiliary magnetic pole 9, an air-core coil can be used in addition to the permanent magnet shown in FIG. 12, but in any case, the cooling mechanism of the auxiliary magnetic pole 9 is compared with the embodiment shown in FIGS. In addition, the feedthrough for introducing the air core coil wiring into the vacuum chamber 1 can be omitted, and the apparatus configuration can be simplified.

In the case of this embodiment, by arranging the auxiliary magnetic pole 9 outside the vacuum chamber 1, problems of cooling of the auxiliary magnetic pole and vacuum sealing can be eliminated, and the device configuration can be simplified.
The auxiliary magnetic pole 4 is composed of a permanent magnet or coil disposed on the atmosphere side of the vacuum chamber 1 and a magnetic body disposed in the vacuum chamber 1 at a position corresponding to the permanent magnet or coil. While reducing the loss of magnetic lines of force generated by an external permanent magnet or coil, it can be introduced into the vacuum chamber 1, thereby simplifying the apparatus and preventing the strength of the confined magnetic field from being lowered.

It is a block diagram which shows one embodiment of this invention. It is a graph which shows the relationship between the substrate bias current and a substrate bias voltage. It is a block diagram which shows other embodiment of this invention. It is a block diagram which shows other embodiment of this invention. It is a block diagram which shows other embodiment of this invention. It is a block diagram which shows other embodiment of this invention. It is a block diagram which shows other embodiment of this invention. It is a graph which shows the relationship between the substrate bias current and a substrate bias voltage. It is a block diagram which shows other embodiment of this invention. It is a block diagram which shows other embodiment of this invention. It is a block diagram which shows other embodiment of this invention. It is a block diagram which shows other embodiment of this invention. It is a block diagram which shows a prior art example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Substrate 3 Magnetron evaporation source 4 Outer magnetic pole 5 Inner magnetic pole 9 Auxiliary magnetic pole

Claims (7)

A plurality of magnetron evaporation sources (3) are provided on the outer periphery of the substrate (2), and metal atoms or ions evaporated from the magnetron evaporation source (3) are attached to the substrate (2) to form a thin film on the substrate (2). In the magnetron sputtering device designed to
An auxiliary magnetic pole (9) having the same polarity as the polarity of the outer magnetic pole (4) of the magnetron evaporation source (3) is disposed at an intermediate position between the adjacent magnetron evaporation sources (3), and each magnetron evaporation source (3 ) Of the outer magnetic poles (4) are all the same in polarity so that the outer magnetic pole (4) of each magnetron evaporation source (3) is intermediate between the auxiliary magnetic pole (9) adjacent to the outer magnetic pole (4). A magnetic field repelling in the vicinity is generated, and a magnetic line of force connecting the inner magnetic pole (5) of each magnetron evaporation source (3) and the auxiliary magnetic pole (9) adjacent to the inner magnetic pole (5) is generated. A magnetron sputtering apparatus. In the magnetron sputtering apparatus in which metal atoms or ions evaporated from the magnetron evaporation source (3) are attached to the substrate (2) to form a thin film on the substrate (2).
One magnetron evaporation source (3) is provided on the outer periphery of the substrate (2), and one or a plurality of auxiliary magnetic poles (9) are adjacent to each other and have the same polarity. The outer magnetic pole (4) of the magnetron evaporation source (3) and the auxiliary magnetic pole (9) are provided to have the same polarity. The outer magnetic pole (4) of the magnetron evaporation source (3) and the outer magnetic pole (4) A magnetic field repelling in the vicinity of the middle of the auxiliary magnetic pole (9) adjacent to the intermediate magnetic field and in the vicinity of the middle of the auxiliary magnetic pole (9) adjacent to each other, and the inner magnetic pole (5) of the magnetron evaporation source (3) 2. A magnetron sputtering apparatus characterized by generating magnetic lines of force connecting the auxiliary magnetic pole (9) adjacent to the inner magnetic pole (5). A plurality of magnetron evaporation sources (3) are provided on the outer periphery of the substrate (2). Metal ions evaporated from the magnetron evaporation source (3) collide with the substrate (2) to form a thin film on the substrate (2). In the magnetron sputtering apparatus designed to form,
Between adjacent magnetron evaporation sources (3), one or a plurality of auxiliary magnetic poles (9) have the same polarity between adjacent auxiliary magnetic poles (9), and the outer magnetic poles of adjacent magnetron evaporation sources (3) ( 4) and the auxiliary magnetic pole (9) are provided so that the polarities thereof are the same, and the polarities of the outer magnetic poles (4) of the respective magnetron evaporation sources (3) are all the same. A repulsive magnetic field is generated near the middle between the outer magnetic pole (4) of (3) and the auxiliary magnetic pole (9) adjacent to the outer magnetic pole (4) and near the middle between the adjacent auxiliary magnetic poles (9). In addition, a magnetron sputtering apparatus is characterized in that magnetic lines of force connecting the inner magnetic pole (5) of each magnetron evaporation source (3) and the auxiliary magnetic pole (9) adjacent to the inner magnetic pole (5) are generated. .     The magnetron evaporation source (3) is a non-equilibrium magnetron evaporation source in which the strength of the outer magnetic pole (4) forming the magnetron is higher than the strength of the inner magnetic pole (5). The magnetron sputtering apparatus according to any one of the above.   The magnetron sputtering according to any one of claims 1 to 3, wherein the auxiliary magnetic pole (9) is composed of a permanent magnet and is movable in a direction in which the auxiliary magnetic pole (9) is in contact with and away from the substrate (2). apparatus.   The magnetron sputtering according to any one of claims 1 to 3, wherein the auxiliary magnetic pole (9) is formed of a coil, and the magnetic field shape and strength can be changed by changing a coil current. apparatus.   The magnetron sputtering apparatus according to any one of claims 1 to 3, wherein the auxiliary magnetic pole (9) is arranged on the atmosphere side of the vacuum chamber (1) in which the substrate (2) is stored.

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