JPWO2020088413A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2020088413A5 JPWO2020088413A5 JP2021523590A JP2021523590A JPWO2020088413A5 JP WO2020088413 A5 JPWO2020088413 A5 JP WO2020088413A5 JP 2021523590 A JP2021523590 A JP 2021523590A JP 2021523590 A JP2021523590 A JP 2021523590A JP WO2020088413 A5 JPWO2020088413 A5 JP WO2020088413A5
- Authority
- JP
- Japan
- Prior art keywords
- ring
- liner
- radial
- assembly according
- liner assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Claims (16)
接地されたライナリングであって、前記ライナリングの周方向に沿って所々に複数の遮蔽ユニットが配置され、前記複数の遮蔽ユニットは、前記ライナリングの内周面と前記ライナリングの外周面との間に形成されかつこれを貫通する間隙であり、かつ前記間隙は、前記内周面から前記外周面へ向かう方向の所々に配置される複数の第1の通路と、各々が隣接する2つの第1の通路に連通する複数の第2の通路とを備える、接地されたライナリングを備え、かつ前記ライナリングの内周面上の、互いに隣接する2つの第1の通路の各々の直交射影は、互いから分離され、前記間隙は迷路構造を構成し、それにより反応チャンバの側壁を保護する、ライナアッセンブリ。 It ’s a liner assembly.
In the grounded liner ring, a plurality of shielding units are arranged in places along the circumferential direction of the liner ring, and the plurality of shielding units are formed on the inner peripheral surface of the liner ring and the outer peripheral surface of the liner ring. A gap formed between the two, and penetrating the gap, the gap is a plurality of first passages arranged in various places in the direction from the inner peripheral surface to the outer peripheral surface, and two adjacent ones each. A grounded liner with a plurality of second passages communicating with the first passage, and orthogonal projection of each of the two adjacent first passages on the inner peripheral surface of the liner ring. Are separated from each other , the gaps forming a labyrinth structure, thereby protecting the sidewalls of the reaction chamber, liner assembly.
B/A+C/D>5
を満たし、ここで、Aは、前記サブリングの周方向における前記半径方向貫通孔の幅であり、Bは、前記サブリングの半径方向厚さであり、Cは、同一のサブリングにおける互いに隣接する2つの個々の半径方向貫通孔間の中心間距離であり、Dは、前記環状間隙の半径方向厚さである、請求項2に記載のライナアッセンブリ。 The depth-to-width ratio of each gap is
B / A + C / D> 5
Here, A is the width of the radial through hole in the circumferential direction of the sub ring, B is the radial thickness of the sub ring, and C is adjacent to each other in the same sub ring. The liner assembly according to claim 2, wherein the distance between the centers is the distance between the two individual radial through holes, and D is the radial thickness of the annular gap.
前記チャンバ本体内に配置される、処理されるべきワークピースを担持するためのベースと、
前記ベースより上、かつ前記チャンバ本体内に配置されるターゲットと、
前記チャンバ本体の側壁の内側に配置されかつ前記内側を囲む請求項1~請求項12のいずれか1項に記載のライナアッセンブリと、を備える、反応チャンバ。 A reaction chamber with a chamber body, and further
A base for supporting the workpiece to be processed, which is placed in the chamber body, and
With a target located above the base and within the chamber body,
A reaction chamber comprising the liner assembly according to any one of claims 1 to 12, which is arranged inside the side wall of the chamber body and surrounds the inside.
前記コイルへ電気的に接続される無線周波数電源と、をさらに備える請求項13に記載の反応チャンバ。 A coil wound along the outside of the side wall of the chamber body,
13. The reaction chamber according to claim 13, further comprising a radio frequency power source electrically connected to the coil.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201821806205.9 | 2018-11-02 | ||
CN201811305127.9A CN109273342A (en) | 2018-11-02 | 2018-11-02 | Liner Components, reaction chamber and semiconductor processing equipment |
CN201821806205.9U CN209133451U (en) | 2018-11-02 | 2018-11-02 | Liner Components, reaction chamber and semiconductor processing equipment |
CN201811305127.9 | 2018-11-02 | ||
PCT/CN2019/113723 WO2020088413A1 (en) | 2018-11-02 | 2019-10-28 | Liner assembly, reaction chamber and semiconductor processing apparatus |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2022506293A JP2022506293A (en) | 2022-01-17 |
JPWO2020088413A5 true JPWO2020088413A5 (en) | 2022-04-07 |
JP7295946B2 JP7295946B2 (en) | 2023-06-21 |
Family
ID=70463434
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021523590A Active JP7295946B2 (en) | 2018-11-02 | 2019-10-28 | Liner assemblies, reaction chambers and semiconductor processing equipment |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP7295946B2 (en) |
KR (1) | KR102473872B1 (en) |
SG (1) | SG11202104119PA (en) |
TW (1) | TWI739194B (en) |
WO (1) | WO2020088413A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114361000B (en) * | 2022-01-04 | 2024-04-16 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber and semiconductor process equipment |
CN116994936A (en) * | 2022-01-18 | 2023-11-03 | 江苏天芯微半导体设备有限公司 | Bush and wafer preprocessing device |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5763851A (en) * | 1995-11-27 | 1998-06-09 | Applied Materials, Inc. | Slotted RF coil shield for plasma deposition system |
TW327236B (en) * | 1996-03-12 | 1998-02-21 | Varian Associates | Inductively coupled plasma reactor with faraday-sputter shield |
CN1228810C (en) * | 1997-04-21 | 2005-11-23 | 东京电子亚利桑那公司 | Method and appts. for ionized sputtering of materials |
US6406590B1 (en) * | 1998-09-08 | 2002-06-18 | Sharp Kaubushiki Kaisha | Method and apparatus for surface treatment using plasma |
US6170429B1 (en) * | 1998-09-30 | 2001-01-09 | Lam Research Corporation | Chamber liner for semiconductor process chambers |
US6398929B1 (en) * | 1999-10-08 | 2002-06-04 | Applied Materials, Inc. | Plasma reactor and shields generating self-ionized plasma for sputtering |
CN101399197B (en) * | 2007-09-30 | 2011-12-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber lining |
CN103882390B (en) * | 2012-12-20 | 2016-04-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and magnetron sputtering equipment |
CN106548914B (en) * | 2015-09-17 | 2018-10-30 | 中微半导体设备(上海)有限公司 | A kind of apparatus for processing plasma and its cleaning system and method |
CN206432234U (en) * | 2016-12-23 | 2017-08-22 | 江苏鲁汶仪器有限公司 | The liner and plasma etching machine reaction chamber of plasma etching machine reaction chamber |
CN209133451U (en) * | 2018-11-02 | 2019-07-19 | 北京北方华创微电子装备有限公司 | Liner Components, reaction chamber and semiconductor processing equipment |
CN109273342A (en) * | 2018-11-02 | 2019-01-25 | 北京北方华创微电子装备有限公司 | Liner Components, reaction chamber and semiconductor processing equipment |
-
2019
- 2019-10-28 JP JP2021523590A patent/JP7295946B2/en active Active
- 2019-10-28 SG SG11202104119PA patent/SG11202104119PA/en unknown
- 2019-10-28 WO PCT/CN2019/113723 patent/WO2020088413A1/en active Application Filing
- 2019-10-28 KR KR1020217011672A patent/KR102473872B1/en active IP Right Grant
- 2019-11-01 TW TW108139761A patent/TWI739194B/en active
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11688590B2 (en) | Electrostatic-chuck heater | |
JP6804990B2 (en) | Substrate support with more uniform edge purge | |
US3225616A (en) | Gear construction | |
JP2021162151A (en) | Composite type insulator and conductor assembly for bearing, having stored insulator | |
KR20170101973A (en) | A substrate support having a plurality of heating zones | |
JPWO2020088413A5 (en) | ||
JP2020530527A5 (en) | ||
US3292980A (en) | Rolling bearings | |
SE0100880D0 (en) | Method and apparatus for producing a stator or rotor component | |
JP7295946B2 (en) | Liner assemblies, reaction chambers and semiconductor processing equipment | |
TW200300824A (en) | Multistage cross roller bearing | |
JP6267315B2 (en) | Bearing assembly for steering column | |
US20180009185A1 (en) | Bead core forming former | |
JP2019211042A (en) | Rolling bearing | |
US11532463B2 (en) | Semiconductor processing chamber and methods for cleaning the same | |
CN205500124U (en) | Spiral shaft | |
US20210213520A1 (en) | Ring for a connection element, a connection element and corresponding manufacturing method | |
JP2010103225A (en) | Electrode plate for plasma processing apparatus | |
EP3696434A1 (en) | Cooling structure for bearing device | |
US4094051A (en) | Method of making sheaves | |
CN106481665A (en) | Bearing between two coil components with pad | |
CN214588729U (en) | Gas diffusion device and etching machine | |
TWI698550B (en) | Semiconductor manufacturing equipment | |
US20210091627A1 (en) | Motor | |
JP2022122520A (en) | Cooling jacket and hardening apparatus |