JPWO2020088413A5 - - Google Patents

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JPWO2020088413A5
JPWO2020088413A5 JP2021523590A JP2021523590A JPWO2020088413A5 JP WO2020088413 A5 JPWO2020088413 A5 JP WO2020088413A5 JP 2021523590 A JP2021523590 A JP 2021523590A JP 2021523590 A JP2021523590 A JP 2021523590A JP WO2020088413 A5 JPWO2020088413 A5 JP WO2020088413A5
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Japan
Prior art keywords
ring
liner
radial
assembly according
liner assembly
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JP2021523590A
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Japanese (ja)
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JP7295946B2 (en
JP2022506293A (en
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Priority claimed from CN201811305127.9A external-priority patent/CN109273342A/en
Priority claimed from CN201821806205.9U external-priority patent/CN209133451U/en
Application filed filed Critical
Priority claimed from PCT/CN2019/113723 external-priority patent/WO2020088413A1/en
Publication of JP2022506293A publication Critical patent/JP2022506293A/en
Publication of JPWO2020088413A5 publication Critical patent/JPWO2020088413A5/ja
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Publication of JP7295946B2 publication Critical patent/JP7295946B2/en
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Claims (16)

ライナアッセンブリであって、
接地されたライナリングであって、前記ライナリングの周方向に沿って所々に複数の遮蔽ユニットが配置され、前記複数の遮蔽ユニットは、前記ライナリングの内周面と前記ライナリングの外周面との間に形成されかつこれを貫通する間隙であり、かつ前記間隙は、前記内周面から前記外周面へ向かう方向の所々に配置される複数の第1の通路と、各々が隣接する2つの第1の通路に連通する複数の第2の通路とを備える、接地されたライナリングを備え、かつ前記ライナリングの内周面上の、互いに隣接する2つの第1の通路の各々の直交射影は、互いから分離され、前記間隙は迷路構造を構成し、それにより反応チャンバの側壁を保護する、ライナアッセンブリ。
It ’s a liner assembly.
In the grounded liner ring, a plurality of shielding units are arranged in places along the circumferential direction of the liner ring, and the plurality of shielding units are formed on the inner peripheral surface of the liner ring and the outer peripheral surface of the liner ring. A gap formed between the two, and penetrating the gap, the gap is a plurality of first passages arranged in various places in the direction from the inner peripheral surface to the outer peripheral surface, and two adjacent ones each. A grounded liner with a plurality of second passages communicating with the first passage, and orthogonal projection of each of the two adjacent first passages on the inner peripheral surface of the liner ring. Are separated from each other , the gaps forming a labyrinth structure, thereby protecting the sidewalls of the reaction chamber, liner assembly.
前記ライナリングは、異なる内径を有する少なくとも2つの入れ子式サブリングを備え、各サブリングは、接地され、間隙に関して言えば、第1の通路は各々、個々のサブリング内に対応して配置される半径方向の貫通孔であり、かつ第2の通路は各々、互いに隣接する2つの個々のサブリング間に対応して配置される環状の間隙である、請求項1に記載のライナアッセンブリ。 The liner ring comprises at least two nested sub-rings with different inner diameters, each sub-ring is grounded and, in terms of gaps, the first passages are respectively arranged correspondingly within the individual sub-rings. The liner assembly of claim 1, wherein each is a radial through hole and the second passage is an annular gap correspondingly arranged between two individual subrings adjacent to each other. 各間隙の深さ対幅比は、
B/A+C/D>5
を満たし、ここで、Aは、前記サブリングの周方向における前記半径方向貫通孔の幅であり、Bは、前記サブリングの半径方向厚さであり、Cは、同一のサブリングにおける互いに隣接する2つの個々の半径方向貫通孔間の中心間距離であり、Dは、前記環状間隙の半径方向厚さである、請求項2に記載のライナアッセンブリ。
The depth-to-width ratio of each gap is
B / A + C / D> 5
Here, A is the width of the radial through hole in the circumferential direction of the sub ring, B is the radial thickness of the sub ring, and C is adjacent to each other in the same sub ring. The liner assembly according to claim 2, wherein the distance between the centers is the distance between the two individual radial through holes, and D is the radial thickness of the annular gap.
同一のサブリングにおける互いに隣接する2つの個々の半径方向貫通孔間の中心間距離は、2mm以上である、請求項2に記載のライナアッセンブリ。 The liner assembly according to claim 2, wherein the center-to-center distance between two adjacent radial through holes in the same subring is 2 mm or more. 前記サブリングの半径方向厚さは、5mm以下である、請求項2に記載のライナアッセンブリ。 The liner assembly according to claim 2, wherein the subring has a radial thickness of 5 mm or less. 前記環状間隙の半径方向厚さは、10mm未満である、請求項2に記載のライナアッセンブリ。 The liner assembly according to claim 2, wherein the radial thickness of the annular gap is less than 10 mm. 前記サブリングの周方向における前記半径方向貫通孔の幅は、0.5mm~10mmの範囲内である、請求項2に記載のライナアッセンブリ。 The liner assembly according to claim 2, wherein the width of the radial through hole in the circumferential direction of the subring is in the range of 0.5 mm to 10 mm. 前記間隙の数は、数十である、請求項1~請求項7のいずれか1項に記載のライナアッセンブリ。 The liner assembly according to any one of claims 1 to 7, wherein the number of the gaps is several tens. 前記間隙の数は、60以上である、請求項8に記載のライナアッセンブリ。 The liner assembly according to claim 8, wherein the number of the gaps is 60 or more. 互いに隣接する2つの個々のサブリングの間で、一方のサブリングにおける各半径方向貫通孔は、他方のサブリングにおける2つの半径方向貫通孔間の中間位置に対応し、他方のサブリングにおける2つの半径方向貫通孔は、前記一方のサブリングにおける前記半径方向貫通孔に隣接する、請求項2に記載のライナアッセンブリ。 Between two individual sub-rings adjacent to each other, each radial through-hole in one sub-ring corresponds to an intermediate position between the two radial through-holes in the other sub-ring and 2 in the other sub-ring. The liner assembly according to claim 2, wherein the one radial through hole is adjacent to the radial through hole in the one subring. 各半径方向貫通孔は、前記サブリングの軸方向に延在する、請求項2に記載のライナアッセンブリ。 The liner assembly according to claim 2, wherein each radial through hole extends in the axial direction of the subring. 各半径方向貫通孔は、前記サブリングを前記サブリングの軸方向に貫通する、請求項11に記載のライナアッセンブリ。 The liner assembly according to claim 11, wherein each radial through hole penetrates the subring in the axial direction of the subring. チャンバ本体を備える反応チャンバであって、さらに、
前記チャンバ本体内に配置される、処理されるべきワークピースを担持するためのベースと、
前記ベースより上、かつ前記チャンバ本体内に配置されるターゲットと、
前記チャンバ本体の側壁の内側に配置されかつ前記内側を囲む請求項1~請求項12のいずれか1項に記載のライナアッセンブリと、を備える、反応チャンバ。
A reaction chamber with a chamber body, and further
A base for supporting the workpiece to be processed, which is placed in the chamber body, and
With a target located above the base and within the chamber body,
A reaction chamber comprising the liner assembly according to any one of claims 1 to 12, which is arranged inside the side wall of the chamber body and surrounds the inside.
前記チャンバ本体の側壁の外側に沿って巻回されるコイルと、
前記コイルへ電気的に接続される無線周波数電源と、をさらに備える請求項13に記載の反応チャンバ。
A coil wound along the outside of the side wall of the chamber body,
13. The reaction chamber according to claim 13, further comprising a radio frequency power source electrically connected to the coil.
前記ライナリングの軸方向における各間隙の長さは、前記コイルの軸方向長さより長く、かつ前記ライナリングの外周面上のコイルの直交射影は、前記ライナリングの軸方向における間隙の2つの端の間に位置決めされる、請求項14に記載の反応チャンバ。 The length of each gap in the axial direction of the liner ring is longer than the axial length of the coil, and the orthogonal projection of the coil on the outer peripheral surface of the liner ring is the two ends of the gap in the axial direction of the liner ring. The reaction chamber according to claim 14, which is positioned between the two. 請求項13~請求項15のいずれか1項に記載の反応チャンバを備える、半導体処理装置。 A semiconductor processing apparatus comprising the reaction chamber according to any one of claims 13 to 15.
JP2021523590A 2018-11-02 2019-10-28 Liner assemblies, reaction chambers and semiconductor processing equipment Active JP7295946B2 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
CN201821806205.9 2018-11-02
CN201811305127.9A CN109273342A (en) 2018-11-02 2018-11-02 Liner Components, reaction chamber and semiconductor processing equipment
CN201821806205.9U CN209133451U (en) 2018-11-02 2018-11-02 Liner Components, reaction chamber and semiconductor processing equipment
CN201811305127.9 2018-11-02
PCT/CN2019/113723 WO2020088413A1 (en) 2018-11-02 2019-10-28 Liner assembly, reaction chamber and semiconductor processing apparatus

Publications (3)

Publication Number Publication Date
JP2022506293A JP2022506293A (en) 2022-01-17
JPWO2020088413A5 true JPWO2020088413A5 (en) 2022-04-07
JP7295946B2 JP7295946B2 (en) 2023-06-21

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JP2021523590A Active JP7295946B2 (en) 2018-11-02 2019-10-28 Liner assemblies, reaction chambers and semiconductor processing equipment

Country Status (5)

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JP (1) JP7295946B2 (en)
KR (1) KR102473872B1 (en)
SG (1) SG11202104119PA (en)
TW (1) TWI739194B (en)
WO (1) WO2020088413A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114361000B (en) * 2022-01-04 2024-04-16 北京北方华创微电子装备有限公司 Semiconductor process chamber and semiconductor process equipment
CN116994936A (en) * 2022-01-18 2023-11-03 江苏天芯微半导体设备有限公司 Bush and wafer preprocessing device

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US5763851A (en) * 1995-11-27 1998-06-09 Applied Materials, Inc. Slotted RF coil shield for plasma deposition system
TW327236B (en) * 1996-03-12 1998-02-21 Varian Associates Inductively coupled plasma reactor with faraday-sputter shield
CN1228810C (en) * 1997-04-21 2005-11-23 东京电子亚利桑那公司 Method and appts. for ionized sputtering of materials
US6406590B1 (en) * 1998-09-08 2002-06-18 Sharp Kaubushiki Kaisha Method and apparatus for surface treatment using plasma
US6170429B1 (en) * 1998-09-30 2001-01-09 Lam Research Corporation Chamber liner for semiconductor process chambers
US6398929B1 (en) * 1999-10-08 2002-06-04 Applied Materials, Inc. Plasma reactor and shields generating self-ionized plasma for sputtering
CN101399197B (en) * 2007-09-30 2011-12-07 北京北方微电子基地设备工艺研究中心有限责任公司 Chamber lining
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CN106548914B (en) * 2015-09-17 2018-10-30 中微半导体设备(上海)有限公司 A kind of apparatus for processing plasma and its cleaning system and method
CN206432234U (en) * 2016-12-23 2017-08-22 江苏鲁汶仪器有限公司 The liner and plasma etching machine reaction chamber of plasma etching machine reaction chamber
CN209133451U (en) * 2018-11-02 2019-07-19 北京北方华创微电子装备有限公司 Liner Components, reaction chamber and semiconductor processing equipment
CN109273342A (en) * 2018-11-02 2019-01-25 北京北方华创微电子装备有限公司 Liner Components, reaction chamber and semiconductor processing equipment

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