TWI789790B - Wafer processing deposition shielding components - Google Patents

Wafer processing deposition shielding components Download PDF

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TWI789790B
TWI789790B TW110122261A TW110122261A TWI789790B TW I789790 B TWI789790 B TW I789790B TW 110122261 A TW110122261 A TW 110122261A TW 110122261 A TW110122261 A TW 110122261A TW I789790 B TWI789790 B TW I789790B
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collimator
aspect ratio
hexagonal
chamber
region
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TW110122261A
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TW202136549A (en
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馬丁李 萊克
莫瑞斯E 艾維特
安納薩 沙布藍尼
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美商應用材料股份有限公司
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Priority claimed from US12/482,846 external-priority patent/US20090308739A1/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering
    • H01J37/3408Planar magnetron sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354Introduction of auxiliary energy into the plasma
    • C23C14/358Inductive energy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3447Collimators, shutters, apertures

Abstract

Embodiments described herein generally relate to an apparatus and method for uniform sputter depositing of materials into the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a collimator for mechanical and electrical coupling with a shield member positioned between a sputtering target and a substrate support pedestal is provided. The collimator comprises a central region and a peripheral region, wherein the collimator has a plurality of apertures extending therethrough and where the apertures located in the central region have a higher aspect ratio than the apertures located in the peripheral region.

Description

晶圓處理沉積屏蔽部件Wafer Handling Deposition Shield Components

本發明之實施例一般關於一種用於將材料均勻濺射沉積至基材上具有高深寬比之特徵結構之底部及側壁的設備與方法。Embodiments of the invention generally relate to an apparatus and method for uniform sputter deposition of material onto the bottom and sidewalls of high aspect ratio features on a substrate.

在積體電路的製造中,濺射或物理氣相沉積(PVD)是一種廣泛用於在基材上沉積薄金屬層的技術。使用PVD來沉積作為擴散阻障層、種晶層、主要導體(primary conductor)、抗反射塗層、及蝕刻停止層的層。然而,藉由PVD難以形成一保有基材形狀的均勻薄膜,其中在該基材中發生諸如形成一介層孔或溝槽的階梯(step)。特定言之,沉積濺射原子的廣角分布導致在具有高深寬比特徵結構之底部與側壁(例如介層孔及溝槽)中的不良覆蓋。In the fabrication of integrated circuits, sputtering or physical vapor deposition (PVD) is a widely used technique for depositing thin metal layers on substrates. Layers that act as diffusion barrier, seed layer, primary conductor, antireflective coating, and etch stop layer are deposited using PVD. However, it is difficult to form a uniform thin film maintaining the shape of a substrate in which a step such as forming a via or trench occurs by PVD. In particular, the wide angular distribution of deposited sputtered atoms results in poor coverage in the bottom and sidewalls of features with high aspect ratios, such as vias and trenches.

發展準直器濺射技術以允許使用PVD在具有高深寬比特徵結構之底部中沉積薄膜。準直器是定位在一濺射源與一基材間的一過濾板。準直器通常具有均勻的厚度並包括一些貫穿該厚度形成的通道。濺射材料必須自濺射源在其路徑上通過準直器而至該基材上。準直器過濾掉將以超過期望角度之銳角撞擊該工作件的材料。Collimator sputtering techniques were developed to allow the use of PVD to deposit thin films in the bottom of features with high aspect ratios. The collimator is a filter plate positioned between a sputtering source and a substrate. A collimator typically has a uniform thickness and includes a number of channels formed through the thickness. The sputtered material must pass from the sputter source on its way through the collimator to the substrate. The collimator filters out material that would strike the workpiece at an acute angle beyond the desired angle.

藉由一給定準直器過濾的實際量取決於通過該準直器之通道的深寬比。因此,沿著接近垂直於該基材之路徑行進的粒子通過該準直器並沉積在該基材上。此舉可改良在底部具有高深寬比之特徵結構中的覆蓋。The actual amount filtered by a given collimator depends on the aspect ratio of the channel through that collimator. Thus, particles traveling along a path approximately perpendicular to the substrate pass through the collimator and are deposited on the substrate. This can improve coverage in features with high aspect ratios at the bottom.

然而,習知準直器結合使用小磁鐵磁控管將存在一些問題。使用小磁鐵磁控管將產生高離子化金屬通量,其有利於填充高深寬比的特徵結構。不幸的是,具有結合小磁鐵磁控管之習知準直器的PVD橫越基材提供不均勻的沉積。來源材料可能在基材的一區域中沉積較基材上的其他區域厚的層。例如,取決於小磁鐵的徑向定位,可能在基材的中心或邊緣沉積較厚的層。此現象不僅導致橫越基材的非均勻沉積,也在基材的一些區域中導致橫越具有高深寬比之特徵結構側壁的非均勻沉積。舉例來說,徑向定位以在靠近基材之周緣的區域中提供最佳磁場均勻性的小磁鐵,導致來源材料被沉積在面對基材中心之特徵結構側壁上的量比被沉積在面對基材之周緣的特徵結構側壁上更大。However, there are some problems with conventional collimators using magnetrons with small magnets. Using a small magnet magnetron will result in a high flux of ionized metal, which is good for filling high aspect ratio features. Unfortunately, PVD with conventional collimators combined with small magnet magnetrons provides uneven deposition across the substrate. The source material may deposit a thicker layer in one area of the substrate than in other areas on the substrate. For example, depending on the radial positioning of the small magnets, thicker layers may be deposited in the center or edges of the substrate. This phenomenon not only results in non-uniform deposition across the substrate, but also in some regions of the substrate across the sidewalls of features with high aspect ratios. For example, small magnets positioned radially to provide optimal magnetic field uniformity in regions near the periphery of the substrate result in more source material being deposited on the feature sidewalls facing the center of the substrate than on the facets. Larger on feature sidewalls towards the periphery of the substrate.

因此,存有一種改良藉由PVD技術橫越基材沉積來源材料之均勻性的需要。Accordingly, there exists a need to improve the uniformity of deposition of source materials across a substrate by PVD techniques.

本文所述之一實施例的一種沉積設備包含:一電氣接地腔室;一濺射靶材,其藉由該腔室支撐並與該腔室電氣絕緣;一基材支撐座,其定位在該濺射靶材的下方並具有一實質平行該濺射靶材之濺射表面的基材支撐表面;一屏蔽構件,其藉由該腔室支撐並電氣耦接至該腔室;及一準直器,其機械並電氣耦接至該屏蔽構件且定位在該濺射靶材與該基材支撐座之間。在一實施例中,準直器具有複數個延伸貫穿其間的孔口。在一實施例中,位於中央區域之孔口具有較位於周邊區域之孔口高的深寬比。A deposition apparatus of an embodiment described herein includes: an electrically grounded chamber; a sputtering target supported by and electrically insulated from the chamber; a substrate support positioned on the a substrate support surface below the sputtering target and having a substantially parallel sputtering surface of the sputtering target; a shielding member supported by the chamber and electrically coupled to the chamber; and a collimator A device is mechanically and electrically coupled to the shield member and positioned between the sputtering target and the substrate support. In one embodiment, the collimator has a plurality of apertures extending therethrough. In one embodiment, the openings in the central region have a higher aspect ratio than the openings in the peripheral region.

在另一實施例中,一沉積設備包含:一電氣接地腔室;一濺射靶材,其藉由該腔室支撐並與該腔室電氣絕緣;一基材支撐座,其定位在該濺射靶材的下方並具有一實質平行該濺射靶材之濺射表面的基材支撐表面;一屏蔽構件,其藉由該腔室支撐並電氣耦接至該腔室;一準直器,其機械式及電氣式耦接至該屏蔽構件且定位在該濺射靶材與該基材支撐座之間;一氣體源;及一控制器。在一實施例中,該濺射靶材是電氣耦接至DC功率源。在一實施例中,基材支撐座是電氣耦接至RF功率源。在一實施例中,該控制器經程式化而提供信號以控制氣體源、DC功率源、及RF功率源。在一實施例中,該準直器具有複數個孔口延伸貫穿其間。在一實施例中,位於中央區域之孔口具有較位於準直器之周邊區域之孔口高的深寬比。在一實施例中,將控制器程式化以提供高偏壓至基材支撐座。In another embodiment, a deposition apparatus includes: an electrically grounded chamber; a sputter target supported by and electrically insulated from the chamber; a substrate support positioned on the sputter target. A substrate support surface below the sputtering target and having a substantially parallel sputtering surface of the sputtering target; a shielding member supported by the chamber and electrically coupled to the chamber; a collimator, It is mechanically and electrically coupled to the shield member and positioned between the sputtering target and the substrate support; a gas source; and a controller. In one embodiment, the sputtering target is electrically coupled to a DC power source. In one embodiment, the substrate support is electrically coupled to an RF power source. In one embodiment, the controller is programmed to provide signals to control the gas source, the DC power source, and the RF power source. In one embodiment, the collimator has a plurality of apertures extending therethrough. In one embodiment, the apertures in the central region have a higher aspect ratio than the apertures in the peripheral region of the collimator. In one embodiment, the controller is programmed to provide a high bias voltage to the substrate support.

在又一實施例中,一種用於沉積材料至基材上的方法,包含以下步驟:在一具有位於濺射靶材與基材支撐座間之準直器的腔室中,對一濺射靶材施加DC偏壓;在鄰近腔室內之濺射靶材的一區域中提供一製程氣體;施加偏壓至基材支撐座;及在高偏壓及低偏壓之間脈衝施加至該基材支撐座的偏壓。在一實施例中,準直器具有複數個孔口延伸貫穿其間。在一實施例中,位於中央區域之孔口具有較位於準直器之周邊區域之孔口高的深寬比。In yet another embodiment, a method for depositing material onto a substrate comprises the steps of: aligning a sputter target with a collimator positioned between the sputter target and the substrate support in a chamber having a collimator applying a DC bias to the material; providing a process gas in a region adjacent to the sputtering target within the chamber; applying a bias to the substrate support; and pulsing the substrate between a high bias and a low bias The bias of the support seat. In one embodiment, the collimator has a plurality of apertures extending therethrough. In one embodiment, the apertures in the central region have a higher aspect ratio than the apertures in the peripheral region of the collimator.

在又一實施例中,提供一種定位在濺射靶材與基材支撐座之間用於機械及電氣耦接屏蔽構件的準直器。該準直器包含中央區域及周邊區域,其中該準直儀具有複數個孔口延伸貫穿其間,且其中位於中央區域之孔口具有較位於周邊區域之孔口高的深寬比。In yet another embodiment, a collimator positioned between a sputter target and a substrate support for mechanically and electrically coupling a shield member is provided. The collimator includes a central area and a peripheral area, wherein the collimator has a plurality of apertures extending therethrough, and wherein the apertures located in the central area have a higher aspect ratio than the apertures located in the peripheral area.

在又一實施例中,提供一種用於在製程腔室中圍繞面對一靶材之基材支撐座的下屏蔽。該下屏蔽包含:一圓柱狀外側帶,其具有一經調整尺寸以圍繞該濺射靶材之濺射表面與基材支撐座的第一直徑,該外側圓柱狀帶包含環繞該濺射靶材之濺射表面的上部分;一中間部分;及一下部分,其環繞該基材支撐座;一支撐凸緣,其具有一支承表面並自圓柱狀外側帶徑向向外延伸;一基底板,自該圓柱狀外側帶之下部分徑向向內延伸;及一圓柱狀內側帶,該圓柱狀內側帶耦接至該基底板並部分地環繞該基材支撐座的凸緣。In yet another embodiment, a lower shield for surrounding a substrate support facing a target in a process chamber is provided. The lower shield comprises: a cylindrical outer band having a first diameter sized to surround the sputtering surface and substrate support of the sputtering target, the outer cylindrical band comprising a sputtering target surrounding the sputtering target An upper portion of the sputtering surface; a middle portion; and a lower portion, which surrounds the substrate support seat; a support flange, which has a support surface and extends radially outward from the cylindrical outer band; a base plate, which extends from the The lower portion of the cylindrical outer band extends radially inwardly; and a cylindrical inner band is coupled to the base plate and partially surrounds the flange of the substrate support.

在又一實施例中,提供一種用於在一基材製程腔室中圍繞一面對支撐座之濺射靶材的上屏蔽。該上屏蔽包含一屏蔽部分及一用於指向性濺射的整合之通量最佳化器。In yet another embodiment, an upper shield for surrounding a sputtering target facing a support in a substrate processing chamber is provided. The upper shield includes a shield portion and an integrated flux optimizer for directional sputtering.

本文所描述的實施例提供在基材上製造積體電路期間用於橫越基材之高深寬比特徵結構來均勻沉積濺射材料的設備及方法。Embodiments described herein provide apparatus and methods for uniformly depositing sputtered material across high aspect ratio features of a substrate during fabrication of integrated circuits on the substrate.

第1圖描繪一製程腔室100範例實施例,該製程腔室100具有可處理基材154之一製程套組140的一實施例。製程套組140包括一單件式下屏蔽180、一單件式上屏蔽186以及一準直器110。在所圖示的實施例中,製程腔室100包含一可在基材上沉積諸如鈦、氧化鋁、鋁、銅、鉭、氮化鉭、鎢、或氮化鎢的濺射腔室,亦稱為物理氣相沉積(PVD)腔室。適當的PVD腔室範例包括皆可購自加州聖塔克拉拉應用材料公司的ALPS® Plus及SIP ENCORE®PVD製程腔室。應瞭解也可利用得自其他製造商的製程腔室來實行本文所述的實施例。FIG. 1 depicts an example embodiment of a process chamber 100 having an embodiment of a process kit 140 that can process a substrate 154 . Process kit 140 includes a single-piece lower shield 180 , a single-piece upper shield 186 and a collimator 110 . In the illustrated embodiment, the process chamber 100 includes a sputtering chamber for depositing substrates such as titanium, aluminum oxide, aluminum, copper, tantalum, tantalum nitride, tungsten, or tungsten nitride, or Known as a Physical Vapor Deposition (PVD) chamber. Examples of suitable PVD chambers include the ALPS® Plus and SIP ENCORE® PVD process chambers, both available from Applied Materials, Inc., Santa Clara, California. It should be appreciated that process chambers from other manufacturers may also be utilized to practice the embodiments described herein.

腔室100包括一濺射源,例如具有一濺射表面145的靶材142,及具有一周邊邊緣153的基材支撐座152,該基材支撐座152用於接收半導體基材154於其上。該基材支撐座可位於一接地腔室壁150中。The chamber 100 includes a sputtering source, such as a target 142 having a sputtering surface 145, and a substrate support 152 having a peripheral edge 153 for receiving a semiconductor substrate 154 thereon. . The substrate support can be located in a grounded chamber wall 150 .

在一實施例中,腔室100包括經由介電隔離器146藉接地導電配接器144支撐的靶材142。靶材142包含在濺射期間待被沉積至基材154之表面上的材料並包括用於形成於基材154內之高深寬比特徵結構中做為一種晶層沉積的銅。在一實施例中,靶材142也可包括一可濺射材料(例如銅)之金屬表面層的黏合組成物,及一結構材料的背層(例如鋁)。In one embodiment, the chamber 100 includes a target 142 supported by a grounded conductive adapter 144 via a dielectric isolator 146 . Target 142 comprises material to be deposited onto the surface of substrate 154 during sputtering and includes copper deposited as a layer for use in high aspect ratio features formed within substrate 154 . In one embodiment, the target 142 may also include an adhesive composition of a metal surface layer of a sputterable material (eg, copper) and a back layer of a structural material (eg, aluminum).

在一實施例中,座152支撐待被濺射塗覆之基材154,其中該基材154具有高深寬比之特徵結構,其底部相對於靶材142的主要表面是平面的。基材支撐座152具有一通常平行靶材142之濺射表面來設置的平面基材接收表面。座152可垂直地穿過伸縮囊(bellow)158移動,其中該伸縮囊158連接至底部腔室壁160以允許基材經由在腔室100的下部分中的負載鎖定閥(未示出)被輸送至座152上。座152可隨後升高至如所示的沉積位置。In one embodiment, the pedestal 152 supports a substrate 154 to be sputter coated, wherein the substrate 154 has high aspect ratio features, the bottom of which is planar relative to the major surface of the target 142 . The substrate support 152 has a planar substrate receiving surface disposed generally parallel to the sputtering surface of the target 142 . The seat 152 is movable vertically through a bellow 158, which is connected to the bottom chamber wall 160 to allow substrates to be loaded via a load lock valve (not shown) in the lower portion of the chamber 100. Transport to seat 152. The seat 152 can then be raised to the deposition position as shown.

在一實施例中,可自氣體源162經由質流控制器164將製程氣體供應至腔室100的下部分中。在一實施例中,可使用耦接至腔室100的可控制直流(DC)功率源148來對靶材142施加負電壓或偏壓。射頻(RF)功率源156可耦接至座152以在基材154上誘導一DC自偏壓。在一實施例中,座152是接地。在一實施例中,座152是電氣浮置的。In one embodiment, process gas may be supplied into the lower portion of the chamber 100 from a gas source 162 through a mass flow controller 164 . In one embodiment, a negative voltage or bias may be applied to the target 142 using a controllable direct current (DC) power source 148 coupled to the chamber 100 . A radio frequency (RF) power source 156 may be coupled to mount 152 to induce a DC self-bias on substrate 154 . In one embodiment, socket 152 is grounded. In one embodiment, socket 152 is electrically floating.

在一實施例中,將磁控管170定位在靶材142上方。磁控管170可包括複數個磁鐵172,該等磁鐵172藉由連接到軸176的基底板174所支撐,軸176可軸向對準腔室100及基材154的中央軸。在一實施例中,該等磁鐵呈一腎形(kidney-shaped)圖案排列。磁鐵172在腔室100內靠近靶材142之正面處產生磁場以生成電漿,而使得大量的離子流撞擊靶材142,致使靶材材料濺射出來。磁鐵172可圍繞軸176旋轉以增加橫跨靶材142表面之磁場的均勻性。在一實施例中,磁控管170是一小磁鐵磁控管。在一實施例中,磁鐵172皆可在一實質平行靶材面的線性方向上相互旋轉與移動以產生一螺旋運動。在一實施例中,磁鐵172可圍繞中央軸及獨立控制的第二軸旋轉以控制其徑向位置及角度位置。In one embodiment, the magnetron 170 is positioned above the target 142 . Magnetron 170 may include a plurality of magnets 172 supported by a base plate 174 connected to an axis 176 that may be axially aligned with the central axis of chamber 100 and substrate 154 . In one embodiment, the magnets are arranged in a kidney-shaped pattern. The magnet 172 generates a magnetic field in the chamber 100 near the front of the target 142 to generate a plasma, so that a large flow of ions hits the target 142, causing the target material to be sputtered out. The magnet 172 is rotatable about an axis 176 to increase the uniformity of the magnetic field across the surface of the target 142 . In one embodiment, the magnetron 170 is a small magnet magnetron. In one embodiment, the magnets 172 are mutually rotatable and movable in a linear direction substantially parallel to the target surface to generate a helical motion. In one embodiment, the magnet 172 is rotatable about a central axis and an independently controlled second axis to control its radial position and angular position.

在一實施例中,腔室100包括一接地下屏蔽180,該接地下屏蔽180具有一藉由腔室側壁150來支撐並耦接至腔室側壁150的一支撐凸緣182。上屏蔽186藉由配接器144的凸緣184來支撐並耦接至配接器144的凸緣184。上屏蔽186及下屏蔽180是如配接器144與腔室壁150的電氣耦接方式來耦接。在一實施例中,上屏蔽186及下屏蔽180皆包含不銹鋼。在一實施例中,腔室100包括一耦接至上屏蔽186的中屏蔽(未示出)。在一實施例中,上屏蔽186及下屏蔽180是在腔室100內電氣浮置的。在一實施例中,上屏蔽186及下屏蔽180可耦接至一電功率源。In one embodiment, the chamber 100 includes a grounded lower shield 180 having a support flange 182 supported by and coupled to the chamber sidewall 150 . The upper shield 186 is supported by and coupled to the flange 184 of the adapter 144 . The upper shield 186 and the lower shield 180 are coupled in the same manner as the adapter 144 is electrically coupled to the chamber wall 150 . In one embodiment, both the upper shield 186 and the lower shield 180 comprise stainless steel. In one embodiment, chamber 100 includes a middle shield (not shown) coupled to upper shield 186 . In one embodiment, upper shield 186 and lower shield 180 are electrically floating within chamber 100 . In one embodiment, upper shield 186 and lower shield 180 may be coupled to an electrical power source.

在一實施例中,上屏蔽186具有一上部分,該上部分以窄間隙188(介於上屏蔽186及靶材142之間)緊密貼合靶材142之環形側凹槽,該窄間隙188窄到足以防止電漿穿透並濺射塗覆該介電隔離器146。上屏蔽186也可包括一向下突出的頂部190,頂部190覆蓋下屏蔽180與上屏蔽186之間的介面,從而防止該等屏蔽藉由濺射沉積材料連結。In one embodiment, the upper shield 186 has an upper portion that closely fits the annular side groove of the target 142 with a narrow gap 188 (between the upper shield 186 and the target 142). Narrow enough to prevent plasma penetration and sputter coat the dielectric spacer 146 . Upper shield 186 may also include a downwardly protruding top 190 that covers the interface between lower shield 180 and upper shield 186, thereby preventing the shields from joining by sputter-depositing material.

在一實施例中,下屏蔽180向下延伸至圓柱狀外側帶196,該圓柱狀外側帶196通常沿著腔室壁150延伸至低於座152之頂表面處。下屏蔽180可具有一自圓柱狀外側帶196向內徑向延伸的基底板198。基底板198可包括環繞座152之周緣而向上延伸的圓柱狀內側帶103。在一實施例中,當座152處於下方的裝載位置時,覆蓋環102是支承在圓柱狀內側帶103的頂部;當座處於上方的沉積位置時,覆蓋環102是支承在座152的外周緣以保護座152不會受到濺射沉積。In one embodiment, the lower shield 180 extends down to a cylindrical outer band 196 that extends generally along the chamber wall 150 below the top surface of the seat 152 . The lower shield 180 may have a base plate 198 extending radially inwardly from a cylindrical outer band 196 . The base plate 198 may include a cylindrical inner band 103 extending upwardly around the periphery of the seat 152 . In one embodiment, when the seat 152 is in the lower loading position, the cover ring 102 is supported on the top of the cylindrical inner belt 103; when the seat is in the upper deposition position, the cover ring 102 is supported on the outer periphery of the seat 152 to Protective seat 152 is protected from sputter deposition.

下屏蔽180環繞靶材142面對支撐座152的濺射表面145並環繞支撐座152的周壁。下屏蔽160覆蓋並遮蔽腔室100的腔室壁150以減少源自濺射靶材142之濺射表面145的濺射沉積物沉積至下屏蔽180背面的部件及表面上。舉例來說,下屏蔽180可保護支撐座152的表面、基材154的多個部分、腔室壁150、及腔室100的底壁160。The lower shield 180 surrounds the sputtering surface 145 of the target 142 facing the support base 152 and surrounds the peripheral wall of the support base 152 . The lower shield 160 covers and shields the chamber wall 150 of the chamber 100 to reduce deposition of sputter deposits originating from the sputtering surface 145 of the sputtering target 142 onto components and surfaces behind the lower shield 180 . For example, the lower shield 180 can protect the surface of the support base 152 , portions of the substrate 154 , the chamber wall 150 , and the bottom wall 160 of the chamber 100 .

在一實施例中,可藉由在靶材142及基材支撐座152之間定位準直器110而達成指向性濺射。準直器110可以機械式或電氣式耦接至上屏蔽186。在一實施例中,準直器110可耦接至定位在腔室100較低處的中屏蔽(未示出)。在一實施例中,準直器110整合至上屏蔽186,如第8圖中所示。在一實施例中,準直器110經焊接至上屏蔽186。在一實施例中,準直器110可在腔室100內電氣浮置的。在一實施例中,準直器110可耦接至電功率源。準直器110包括用以在腔室內引導氣體及(或)材料流的複數個孔口(在第1圖中省略)。In one embodiment, directional sputtering can be achieved by positioning the collimator 110 between the target 142 and the substrate support 152 . The collimator 110 may be coupled to the upper shield 186 either mechanically or electrically. In an embodiment, the collimator 110 may be coupled to an intermediate shield (not shown) positioned lower in the chamber 100 . In one embodiment, the collimator 110 is integrated into the upper shield 186, as shown in FIG. 8 . In one embodiment, the collimator 110 is soldered to the upper shield 186 . In one embodiment, the collimator 110 may be electrically floating within the chamber 100 . In one embodiment, the collimator 110 may be coupled to an electrical power source. The collimator 110 includes a plurality of orifices (omitted in FIG. 1 ) for directing gas and/or material flow within the chamber.

第2圖為準直器110之一實施例的上平面視圖。準直器110通常為一緊密堆積組態的蜂巢結構,該蜂巢結構具有用於分隔六角形孔口128之六角形壁126。六角形孔口128的深寬比可界定為孔口128之深度(等於準直器的厚度)除以孔口128的寬度129。在一實施例中,壁126的厚度介於約0.06吋至約0.18吋。在一實施例中,壁126的厚度介於約0.12吋至約0.15吋。在一實施例中,準直器包含選自鋁、銅、及不銹鋼的材料。FIG. 2 is a top plan view of one embodiment of the collimator 110 . The collimator 110 is generally a honeycomb structure in a close-packed configuration with hexagonal walls 126 separating hexagonal apertures 128 . The aspect ratio of the hexagonal aperture 128 may be defined as the depth of the aperture 128 (equal to the thickness of the collimator) divided by the width 129 of the aperture 128 . In one embodiment, the wall 126 has a thickness ranging from about 0.06 inches to about 0.18 inches. In one embodiment, the wall 126 has a thickness ranging from about 0.12 inches to about 0.15 inches. In one embodiment, the collimator comprises a material selected from aluminum, copper, and stainless steel.

第3圖為根據本文所述之一實施例之準直器310的示意截面圖。準直器310包括一中央區域320,其具有一高深寬比,例如自約1.5:1至約3:1。在一實施例中,中央區域320的深寬比約2.5:1。準直器310的深寬比沿著徑向方向自中央區域320至外周邊區域340而減少。在一實施例中,準直器310之深寬比自中央區域320至周邊區域340,深寬比從約2.5:1減少至約1:1。在另一實施例中,準直器310的深寬比自中央區域320至周邊區域340,深寬比從約3:1減少至約1:1。在一實施例中,準直器310之深寬比自中央區域320至周邊區域340,深寬比從約1.5:1減少至約1:1。FIG. 3 is a schematic cross-sectional view of a collimator 310 according to an embodiment described herein. The collimator 310 includes a central region 320 having a high aspect ratio, eg, from about 1.5:1 to about 3:1. In one embodiment, the aspect ratio of the central region 320 is about 2.5:1. The aspect ratio of the collimator 310 decreases along the radial direction from the central region 320 to the outer peripheral region 340 . In one embodiment, the aspect ratio of the collimator 310 decreases from about 2.5:1 to about 1:1 from the central region 320 to the peripheral region 340 . In another embodiment, the aspect ratio of the collimator 310 decreases from about 3:1 to about 1:1 from the central region 320 to the peripheral region 340 . In one embodiment, the aspect ratio of the collimator 310 decreases from about 1.5:1 to about 1:1 from the central region 320 to the peripheral region 340 .

在一實施例中,藉由改變準直器310的厚度來完成準直器310之徑向孔的減少。在一實施例中,準直器310的中央區域320具有一增加的厚度,例如介於約3吋至約6吋之間。在一實施例中,準直器310之中央區域320的厚度為約5吋。在一實施例中,準直器310的厚度自中央區域320至周邊區域340,厚度從約5吋徑向減少至約2吋。在一實施例中,準直器310的厚度自中央區域320至周邊區域340,厚度從約6吋徑向減少至約2吋。在一實施例中,準直器310的厚度自中央區域320,厚度從約2.5吋徑向減少至約2吋。In one embodiment, the reduction of the radial aperture of the collimator 310 is accomplished by changing the thickness of the collimator 310 . In one embodiment, the central region 320 of the collimator 310 has an increased thickness, for example, between about 3 inches and about 6 inches. In one embodiment, the thickness of the central region 320 of the collimator 310 is about 5 inches. In one embodiment, the thickness of the collimator 310 decreases radially from about 5 inches to about 2 inches from the central region 320 to the peripheral region 340 . In one embodiment, the thickness of the collimator 310 decreases radially from about 6 inches to about 2 inches from the central region 320 to the peripheral region 340 . In one embodiment, the thickness of the collimator 310 radially decreases from about 2.5 inches to about 2 inches from the central region 320 .

儘管繪示於第3圖中之準直器310之實施例的深寬比變化顯示一徑向減少的厚度,也可藉由自中央區域320至周邊區域340增加準直器310孔口的寬度來減少深寬比。在另一實施例中,準直器310的厚度自中央區域320至周邊區域340減少且準直器310的寬度自中央區域320至周邊區域340增加。Although the aspect ratio variation of the embodiment of the collimator 310 shown in FIG. to reduce the aspect ratio. In another embodiment, the thickness of the collimator 310 decreases from the central region 320 to the peripheral region 340 and the width of the collimator 310 increases from the central region 320 to the peripheral region 340 .

一般而言,第3圖中的實施例繪示以線性方式徑向減少而獲致倒圓錐形形狀的深寬比。本發明的其他實施例可包括非線性減少的深寬比。In general, the embodiment in Figure 3 shows an aspect ratio that decreases radially in a linear fashion to obtain an inverted conical shape. Other embodiments of the invention may include non-linearly reduced aspect ratios.

第4圖為根據本發明之一實施例之準直器410的示意截面圖。準直器410具有以非線性方式自中央區域420至周邊區域440減少而獲致凸形形狀的厚度。FIG. 4 is a schematic cross-sectional view of a collimator 410 according to an embodiment of the present invention. The collimator 410 has a thickness that decreases in a non-linear manner from the central region 420 to the peripheral region 440 resulting in a convex shape.

第5圖為根據本發明之一實施例之準直器510的示意截面圖。準直器510具有以非線性方式自中央區域520至周邊區域540減少而獲致凹形形狀的厚度。FIG. 5 is a schematic cross-sectional view of a collimator 510 according to an embodiment of the present invention. The collimator 510 has a thickness that decreases in a non-linear manner from the central region 520 to the peripheral region 540 resulting in a concave shape.

在一些實施例中,中央區域320、420、520將近為零,使得中央區域320、420、520在準直器310、410、510的底部呈現為一點。In some embodiments, the central region 320 , 420 , 520 is approximately zero such that the central region 320 , 420 , 520 appears as a point at the bottom of the collimator 310 , 410 , 510 .

回頭參看第1圖,無論準直器110徑向減少之深寬比的實際形狀,PVD製程腔室100的操作與準直器110的功能是相似的。系統控制器101設置在腔室100的外側且通常有利於整體系統的控制及自動化。系統控制器101可包括一中央處理單元(CPU)(未示出)、記憶體(未示出)、及支援電路(未示出)。CPU可為任何在工業設備中用於控制多種系統功能及腔室製程的電腦處理器。Referring back to FIG. 1 , regardless of the actual shape of the radially reduced aspect ratio of the collimator 110 , the operation of the PVD process chamber 100 is similar to the function of the collimator 110 . The system controller 101 is disposed outside the chamber 100 and generally facilitates the control and automation of the overall system. The system controller 101 may include a central processing unit (CPU) (not shown), memory (not shown), and supporting circuits (not shown). The CPU can be any computer processor used in industrial equipment to control various system functions and chamber processes.

在一實施例中,系統控制器101提供訊號以定位在基材支撐座152上的基材154並在腔室100中產生電漿。系統控制器101發送訊號以透過DC功率源148施加電壓來偏壓靶材142並將製程氣體(例如,氬)激發成電漿。系統控制器101可進一步提供訊號以致使RF功率源156來DC自偏壓該座152。DC自偏壓有助於吸引電漿中產生的帶正電離子深入至基材表面上之高深寬比的介層孔及凹槽中。In one embodiment, the system controller 101 provides signals to position the substrate 154 on the substrate support 152 and generate a plasma in the chamber 100 . The system controller 101 sends a signal to apply a voltage through a DC power source 148 to bias the target 142 and excite the process gas (eg, argon) into a plasma. The system controller 101 may further provide a signal to cause the RF power source 156 to DC self-bias the socket 152 . The DC self-bias helps to attract positively charged ions generated in the plasma deep into the high aspect ratio vias and grooves on the substrate surface.

準直器110實行如過濾器的功能以捕陷自靶材142以超過選定角度(幾乎垂直基材154)之角度發射出的離子及中性粒子。準直器110可為分別繪示於第3、4、5圖中之準直器310、410、510中之一者。具有自中心徑向減少深寬比之特性的準直器110允許自靶材142之周邊區域發射出之較大百分比的離子可通過準直器110。因此,可同時增加沉積在基材154之周邊區域的離子數以及離子到達的角度。因此,根據本發明實施例,可更均勻地橫跨基材154之表面來濺射沉積材料。另外,可更均勻地在具有高深寬比特徵結構的底部及側壁沉積材料,特別是位在靠近基材154周邊之具有高深寬比之介層孔及凹槽。The collimator 110 functions as a filter to trap ions and neutral particles emitted from the target 142 at angles beyond a selected angle (nearly perpendicular to the substrate 154). The collimator 110 can be one of the collimators 310, 410, 510 shown in Figures 3, 4, and 5, respectively. The collimator 110 having the characteristic of decreasing aspect ratio radially from the center allows a larger percentage of ions emitted from the peripheral region of the target 142 to pass through the collimator 110 . Therefore, the number of ions deposited on the peripheral region of the substrate 154 and the angle of arrival of the ions can be increased at the same time. Thus, according to embodiments of the present invention, sputter-deposited material may be more uniformly across the surface of substrate 154 . In addition, material can be more uniformly deposited on the bottom and sidewalls of features with high aspect ratios, especially vias and grooves with high aspect ratios near the periphery of substrate 154 .

另外,為了在具有高深寬比之特徵結構的底部及側壁提供更大覆蓋率的濺射沉積材料,可濺射蝕刻被濺射沉積在特徵結構的場域與底部區域上的材料。在一實施例中,系統控制器101施加高偏壓至座152使得靶材142離子蝕刻已沉積在基材154上之膜。因此,減少沉積至基材154上的場沉積速率,且濺射材料再沉積至具有高深寬比之特徵結構的側壁或底部。在一實施例中,系統控制器101以一脈衝或交替方式施加高偏壓及低偏壓至座152,使得製程變成脈衝沉積/蝕刻製程。在一實施例中,特別是位於磁鐵172下方之準直器110單元引導大量沉積材料朝向基材154。因此,在任何特定時間,可在基材154中的一區域沉積材料,同時可蝕刻已經沉積在基材154之另一區域的材料。Additionally, to provide greater coverage of sputter-deposited material on the bottom and sidewalls of features having high aspect ratios, the material sputter-deposited on the field and bottom regions of the feature may be sputter etched. In one embodiment, the system controller 101 applies a high bias voltage to the pedestal 152 so that the target 142 ion-etches the film deposited on the substrate 154 . Thus, the field deposition rate deposited onto substrate 154 is reduced, and the sputtered material redeposits to the sidewalls or bottoms of features having high aspect ratios. In one embodiment, the system controller 101 applies a high bias voltage and a low bias voltage to the pedestal 152 in a pulsed or alternating manner, so that the process becomes a pulsed deposition/etch process. In one embodiment, specifically the collimator 110 unit located below the magnet 172 directs the mass of deposited material towards the substrate 154 . Thus, at any given time, material may be deposited in one area of substrate 154 while material already deposited in another area of substrate 154 may be etched.

在一實施例中,為了在具有高深寬比之特徵結構之側壁上提供更大覆蓋率的濺射沉積材料,可使用諸如氬電漿的二級電漿(其產生在腔室中靠近基材154的一區域)來濺射蝕刻濺射沉積在特徵結構之底部的材料。在一實施例中,腔室100包括RF線圈141,該RF線圈藉由複數個線圈間隔物143附接至下屏蔽180,該等線圈間隔物143將線圈141與下屏蔽180電氣絕緣。系統控制器101發送訊號以透過饋通間距(feedthrough standoff)(未示出)施加RF功率經由屏蔽180至線圈141。在一實施例中,RF線圈將RF能量感應式耦接至腔室100的內部以離子化前驅物氣體(例如氬)而維持靠近基材154的二級電漿。二級電漿自高深寬比特徵結構的底部再濺射一沉積層並再沉積材料至特徵結構的側壁上。In one embodiment, to provide greater coverage of sputter-deposited material on the sidewalls of features with high aspect ratios, a secondary plasma such as an argon plasma (generated in the chamber near the substrate) may be used. 154) to sputter etch material sputter deposited on the bottom of the feature. In one embodiment, the chamber 100 includes an RF coil 141 attached to the lower shield 180 by a plurality of coil spacers 143 that electrically insulate the coil 141 from the lower shield 180 . The system controller 101 sends a signal to apply RF power through the shield 180 to the coil 141 through a feedthrough standoff (not shown). In one embodiment, an RF coil inductively couples RF energy to the interior of the chamber 100 to ionize a precursor gas (eg, argon) to maintain a secondary plasma near the substrate 154 . The secondary plasma resputters a deposition layer from the bottom of the high aspect ratio feature and redeposits material onto the sidewalls of the feature.

仍舊參照第1圖,準直器110可藉由複數個徑向支架111附接至上屏蔽186。Still referring to FIG. 1 , the collimator 110 may be attached to the upper shield 186 by a plurality of radial brackets 111 .

第6圖為根據本發明實施例用於將準直器110附接至上屏蔽186之支架611的放大截面視圖。支架611包括內螺紋管613,該內螺紋管613焊接至準直器110並自準直器110徑向向外延伸。緊固構件615(例如螺栓)可插入上屏蔽186的孔口中並螺紋旋入至管613中以將準直器110附接至上屏蔽186,同時使可能沉積在管613或緊固構件615之螺紋部分的材料減到最少。FIG. 6 is an enlarged cross-sectional view of bracket 611 used to attach collimator 110 to upper shield 186 in accordance with an embodiment of the present invention. The bracket 611 includes an internally threaded tube 613 welded to the collimator 110 and extending radially outward from the collimator 110 . A fastening member 615, such as a bolt, can be inserted into an aperture of the upper shield 186 and threaded into the tube 613 to attach the collimator 110 to the upper shield 186 while enabling possible deposition on the threads of the tube 613 or fastening member 615. Part materials are kept to a minimum.

第7圖為根據本發明之另一實施例用於將準直器110附接至上屏蔽186之支架711的放大截面視圖。支架711包括一螺椿713,該螺椿713焊接至準直器110並自準直器110上徑向向外延伸。可將內螺紋緊固構件715插入並穿過上屏蔽186中的孔口並螺紋旋至螺椿713上以將準直器110附接至上屏蔽186上,同時使可能沉積在螺椿713或緊固構件715之螺紋部分的材料減到最少。FIG. 7 is an enlarged cross-sectional view of a bracket 711 for attaching the collimator 110 to the upper shield 186 according to another embodiment of the present invention. The bracket 711 includes a stud 713 welded to the collimator 110 and extending radially outward from the collimator 110 . An internally threaded fastening member 715 may be inserted through an aperture in the upper shield 186 and threaded onto the stud 713 to attach the collimator 110 to the upper shield 186 while making it possible to deposit on the stud 713 or the stud 713. The material of the threaded portion of the solid member 715 is minimized.

第8圖為具有本文所述之製程套組840之另一實施例之半導體製程系統800的示意截面圖。相似於製程套組140,製程套組840包括單件式下屏蔽180。然而,不像包含透過一徑向支架111耦接至上屏蔽186之分離準直器110的製程套組140,製程套組840包括單體上屏蔽886,該上屏蔽886包含一屏蔽部分892及整合之通量最佳化器部分810。單體上屏蔽886之單體結構允許冷卻效率的最大化。整合之通量最佳化器部分810包括如上述在腔室內引導氣體及(或)材料通量的複數個孔口(在第8圖中省略)。FIG. 8 is a schematic cross-sectional view of a semiconductor processing system 800 having another embodiment of a process kit 840 described herein. Similar to process kit 140 , process kit 840 includes a single-piece lower shield 180 . However, unlike process kit 140 which includes a separate collimator 110 coupled to upper shield 186 via a radial bracket 111, process kit 840 includes a monolithic upper shield 886 comprising a shield portion 892 and integrated The flux optimizer part 810 of. The unibody construction of the shield 886 on a unibody allows for maximum cooling efficiency. The integrated flux optimizer portion 810 includes a plurality of orifices (omitted in Figure 8) that direct gas and/or material flux within the chamber as described above.

第9A圖為根據本文所述實施例之單體上屏蔽886的部分截面圖。第9B圖為根據本文所述實施例之第9A圖之單體上屏蔽886的上平面視圖。調整單體上屏蔽886的尺寸以圍繞面對支撐座152之濺射靶材142的濺射表面145。單體上屏蔽886遮蔽腔室100的配接器144以減少源自濺射靶材142之濺射表面145而濺射沉積的沉積物。FIG. 9A is a partial cross-sectional view of a monolithic upper shield 886 according to embodiments described herein. Figure 9B is a top plan view of the monolithic upper shield 886 of Figure 9A according to embodiments described herein. Monolithic upper shield 886 is sized to surround sputtering surface 145 of sputtering target 142 facing support 152 . The monolithic upper shield 886 shields the adapter 144 of the chamber 100 to reduce sputter-deposited deposits from the sputter surface 145 of the sputter target 142 .

如第8、9A及9B圖中所示,單體上屏蔽886為單一結構且包含屏蔽部分892與一整合之通量最佳化器部分810。例如,屏蔽部分892及整合之通量最佳化器部分810可由單塊(single mass)材料來製造。屏蔽部分892包含圓柱狀帶902。圓柱狀帶902包含頂壁904及底壁906。支撐凸緣908自圓柱狀帶902之頂壁904徑向向外延伸。支撐凸緣908包含一支承表面910,用以支承腔室800的配接器144。在一實施例中,支承表面910和底壁906相交而形成90度角。在一實施例中,支撐凸緣908具有複數個狹縫,該等狹縫經塑型以接收將上屏蔽892對準至配接器144的插銷。在一實施例中,支撐凸緣908具有一或多個環繞圓柱狀帶902呈週期性定位的凹口940。As shown in FIGS. 8 , 9A and 9B , monolithic upper shield 886 is a unitary structure and includes shield portion 892 and an integrated flux optimizer portion 810 . For example, shield portion 892 and integrated flux optimizer portion 810 may be fabricated from a single mass of material. Shield portion 892 includes cylindrical strip 902 . Cylindrical strip 902 includes a top wall 904 and a bottom wall 906 . A support flange 908 extends radially outward from the top wall 904 of the cylindrical band 902 . The support flange 908 includes a support surface 910 for supporting the adapter 144 of the chamber 800 . In one embodiment, the support surface 910 and the bottom wall 906 intersect to form a 90 degree angle. In one embodiment, support flange 908 has slots shaped to receive pins that align upper shield 892 to adapter 144 . In one embodiment, the support flange 908 has one or more notches 940 positioned periodically around the cylindrical band 902 .

如第9A圖中所示,頂壁904進一步包含一頂表面925、內周邊926、及外周邊928。頂壁904的外周邊和支撐凸緣908相交以形成梯狀部分932。As shown in FIG. 9A , the top wall 904 further includes a top surface 925 , an inner perimeter 926 , and an outer perimeter 928 . The outer perimeter of top wall 904 and support flange 908 meet to form stepped portion 932 .

在一實施例中,如第8圖中所示,圓柱狀帶902的底璧906具有一外直徑(以箭頭“A”圖示),經調整尺寸以在配接器144中貼合並支承下屏蔽180的梯狀部分1032(圖示於第10B圖)。在一實施例中,底壁906之外直徑“A”介於約18吋(45.7公分)至約18.5吋(47公分)之間。在另一實施例中,底壁906之外直徑“A”介於約18.1吋(46公分)至約18.2吋(46.2公分)之間。在一實施例中,圓柱狀帶902具有以箭頭“B”圖示的內直徑。在一實施例中,圓柱狀帶902的內直徑 “B”介於約17.2吋(43.7公分)至約17.9吋(45.5公分)之間。在另一實施例中,圓柱狀帶902的內直徑“B”介於約17.5吋(44.5公分)至約17.7吋(45公分)之間。在一實施例中,頂壁904具有以箭頭“C”圖示的外直徑。在一實施例中,頂壁904及底壁906具有相同內直徑“B”。In one embodiment, as shown in FIG. 8, the bottom wall 906 of the cylindrical band 902 has an outer diameter (illustrated by arrow "A") sized to fit and support in the adapter 144. Stepped portion 1032 of shield 180 (shown in Figure 10B). In one embodiment, the outer diameter "A" of the bottom wall 906 is between about 18 inches (45.7 cm) and about 18.5 inches (47 cm). In another embodiment, the outer diameter "A" of the bottom wall 906 is between about 18.1 inches (46 cm) and about 18.2 inches (46.2 cm). In one embodiment, cylindrical band 902 has an inner diameter illustrated by arrow "B". In one embodiment, the inner diameter "B" of the cylindrical band 902 is between about 17.2 inches (43.7 cm) and about 17.9 inches (45.5 cm). In another embodiment, the inner diameter "B" of the cylindrical band 902 is between about 17.5 inches (44.5 cm) and about 17.7 inches (45 cm). In one embodiment, top wall 904 has an outer diameter illustrated by arrow "C". In one embodiment, the top wall 904 and bottom wall 906 have the same inner diameter "B".

在一實施例中,頂壁904的外直徑“C”介於約18吋(45.7公分)至約18.5吋(47公分)之間。在另一實施例中,頂壁904的外直徑“C”介於約18.3吋(46.5公分)至約18.4吋(46.7公分)之間。在一實施例中,頂壁904之外直徑“C”大於底壁906的外直徑“A”。In one embodiment, the outer diameter "C" of the top wall 904 is between about 18 inches (45.7 cm) and about 18.5 inches (47 cm). In another embodiment, the outer diameter "C" of the top wall 904 is between about 18.3 inches (46.5 cm) and about 18.4 inches (46.7 cm). In one embodiment, the outer diameter "C" of the top wall 904 is greater than the outer diameter "A" of the bottom wall 906 .

可相似於分別繪示在第3、4及5圖中之準直器310、410或510中之一者來設計整合之通量最佳化器部分810。如第9B圖中所示,整合之通量最佳化器部分810通常為一緊密堆積組態的蜂巢結構,該蜂巢結構 具有用於分隔六角形孔口944之六角形壁942。六角形孔口944的深寬比可界定為孔口944之深度(等於整合之通量最佳化器部分810的厚度)除以孔口的寬度946。在一實施例中,鄰近屏蔽部分892的六角形壁942具有去角(chamfer)950及一半徑。The integrated flux optimizer portion 810 may be designed similarly to one of the collimators 310, 410 or 510 shown in Figures 3, 4 and 5, respectively. As shown in FIG. 9B , the integrated flux optimizer section 810 is generally a honeycomb structure in a close-packed configuration with hexagonal walls 942 separating hexagonal orifices 944 . The aspect ratio of the hexagonal aperture 944 may be defined as the depth of the aperture 944 (equal to the thickness of the integrated flux optimizer portion 810 ) divided by the width 946 of the aperture. In one embodiment, the hexagonal wall 942 adjacent to the shield portion 892 has a chamfer 950 and a radius.

在一實施例中,單體上屏蔽886可由單塊鋁經機械成形。單體上屏蔽886可選擇性經塗覆或經陽極處理。或者,單體上屏蔽886可由與製程環境相容的其他材料製成,並且也可包含一或多個區段。或者,上屏蔽的屏蔽部分892及整合之通量最佳化器部分810可以個別片段形成且使用適當的附接方式(諸如焊接)耦接在一起。In one embodiment, the monolithic upper shield 886 may be machine formed from a single piece of aluminum. Monolithic upper shield 886 may optionally be coated or anodized. Alternatively, the monolithic upper shield 886 may be made of other materials compatible with the process environment, and may also comprise one or more segments. Alternatively, the shield portion 892 of the upper shield and the integrated flux optimizer portion 810 may be formed in separate pieces and coupled together using suitable attachment means, such as welding.

第10A及10B圖為根據本文所述實施例之下屏蔽的部分截面視圖。第10C圖為第10A圖之下屏蔽之一實施例的俯視圖。如第1及10A-10C圖所示,下屏蔽180為單一結構且包含圓柱狀外側帶196、基底板198及內側圓柱狀帶103。圓柱狀外側帶196具有一經調整尺寸以圍繞濺射靶材142之濺射表面145與座152之周邊邊緣153的直徑。圓柱狀外側帶196包含一上部分1012、一中間部分1014、及一下部分1016。上部分1012經調整尺寸以圍繞濺射靶材142的濺射表面145。支撐凸緣182自該圓柱狀外側帶196的上部分1012徑向向外延伸。支撐凸緣182包含用以支承腔室100之腔室壁150的支承表面1024。支承表面1024可具有複數個狹縫,該等狹縫經塑形以接收將下屏蔽180對準至腔室壁150的插銷或任何定位在腔室壁150與下屏蔽180之間的配接器。在一實施例中,支承表面1024具有約10至約80微吋(microinch)的表面粗糙度,甚至約16至約63微吋,或在一實施例中,約32微吋的表面粗糙度。10A and 10B are partial cross-sectional views of a lower shield according to embodiments described herein. Figure 10C is a top view of one embodiment of the shield below Figure 10A. As shown in FIGS. 1 and 10A-10C , lower shield 180 is a unitary structure and includes cylindrical outer band 196 , base plate 198 and inner cylindrical band 103 . Cylindrical outer band 196 has a diameter sized to surround sputtering surface 145 of sputtering target 142 and peripheral edge 153 of seat 152 . The cylindrical outer band 196 includes an upper portion 1012 , a middle portion 1014 , and a lower portion 1016 . Upper portion 1012 is sized to surround sputtering surface 145 of sputtering target 142 . A support flange 182 extends radially outward from an upper portion 1012 of the cylindrical outer band 196 . The support flange 182 includes a bearing surface 1024 for supporting the chamber wall 150 of the chamber 100 . The support surface 1024 may have a plurality of slots shaped to receive pins that align the lower shield 180 to the chamber wall 150 or any adapter positioned between the chamber wall 150 and the lower shield 180 . In one embodiment, support surface 1024 has a surface roughness of about 10 to about 80 microinches, even about 16 to about 63 microinches, or in one embodiment, about 32 microinches.

如第10B圖中所示,上部分1012包含頂表面1025、內周邊1026、及外周邊1028。外周邊1028向上延伸至頂表面1025上方以形成一環形唇部1030。環形唇部1030形成具有頂表面1025的梯狀部分1032。在一實施例中,環形唇部1030經垂直該頂表面1025定位以形成梯狀部分1032。梯狀部分1032提供一支承表面以接合上屏蔽186。As shown in FIG. 10B , upper portion 1012 includes top surface 1025 , inner perimeter 1026 , and outer perimeter 1028 . The outer perimeter 1028 extends upwardly above the top surface 1025 to form an annular lip 1030 . The annular lip 1030 forms a stepped portion 1032 having a top surface 1025 . In one embodiment, the annular lip 1030 is positioned perpendicular to the top surface 1025 to form a stepped portion 1032 . The stepped portion 1032 provides a bearing surface to engage the upper shield 186 .

在一實施例中,環形唇部1030具有一以箭頭“D”圖示的外直徑。在一實施例中,環形唇部1030的外直徑“D”介於約18.4吋(46.7公分)至約18.7吋(47.5公分)之間。在另一實施例中,環形唇部1030的外直徑“D”介於約18.5吋(47公分)至約18.6吋(47.2公分)之間。在一實施例中,環形唇部1030具有一以箭頭“E”圖示的內直徑。在一實施例中,環形唇部1030的內直徑“E”介於約18.2吋(46.2公分)至約18.5吋(47公分)之間。在另一實施例中,環形唇部1030的內直徑“E”介於約18.3吋(46.5公分)至約18.4吋(46.7公分)之間。In one embodiment, the annular lip 1030 has an outer diameter illustrated by arrow "D". In one embodiment, the outer diameter "D" of the annular lip 1030 is between about 18.4 inches (46.7 cm) and about 18.7 inches (47.5 cm). In another embodiment, the outer diameter "D" of the annular lip 1030 is between about 18.5 inches (47 cm) and about 18.6 inches (47.2 cm). In one embodiment, the annular lip 1030 has an inner diameter illustrated by arrow "E". In one embodiment, the inner diameter "E" of the annular lip 1030 is between about 18.2 inches (46.2 cm) and about 18.5 inches (47 cm). In another embodiment, the inner diameter "E" of the annular lip 1030 is between about 18.3 inches (46.5 cm) and about 18.4 inches (46.7 cm).

在一實施例中,頂表面1025的外直徑係相同於環形唇部1030的內直徑“E”。在一實施例中,頂表面具有一以箭頭“F”圖示的內直徑。在一實施例中,頂表面1025的內直徑“F”係介於約17.2吋(43.7公分)至約18吋(45.7公分)之間。在另一實施例中,頂表面1025的內直徑“F”介於約17.5吋(44.5公分)至約17.6吋(44.7公分)之間。In one embodiment, the outer diameter of the top surface 1025 is the same as the inner diameter “E” of the annular lip 1030 . In one embodiment, the top surface has an inner diameter illustrated by arrow "F". In one embodiment, the inner diameter "F" of the top surface 1025 is between about 17.2 inches (43.7 cm) and about 18 inches (45.7 cm). In another embodiment, the inner diameter "F" of the top surface 1025 is between about 17.5 inches (44.5 cm) and about 17.6 inches (44.7 cm).

在一實施例中,上部分1012的內周邊1026係自垂直方向以角度a徑向向外成角。在一實施例中,角度a與垂直方向的夾角是約2°至約10°。在一實施例中,角度a與垂直方向的夾角是約4°。In one embodiment, the inner perimeter 1026 of the upper portion 1012 is angled radially outward at an angle a from vertical. In one embodiment, the included angle between the angle a and the vertical direction is about 2° to about 10°. In one embodiment, the included angle between the angle a and the vertical direction is about 4°.

下部分1016經調整尺寸以圍繞座152。基底板198自圓柱狀外側帶196之下部分1016徑向向內延伸。圓柱狀內側帶103與基底板198耦接且經調整尺寸以圍繞座152。圓柱狀內側帶103、基底板198、及圓柱狀外側帶196形成一U形通道。圓柱狀內側帶103包含低於圓柱狀外側帶196之高度的高度。在一實施例中,內側圓柱狀帶103的高度約為圓柱狀外側帶196之高度的五分之一。在一實施例中,中間部分1014具有一凹口1040。在一實施例中,圓柱狀外側帶196具有複數個氣體孔1042。Lower portion 1016 is sized to surround seat 152 . Base plate 198 extends radially inwardly from lower portion 1016 of cylindrical outer band 196 . The cylindrical inner band 103 is coupled with the base plate 198 and is sized to surround the seat 152 . The cylindrical inner band 103, base plate 198, and cylindrical outer band 196 form a U-shaped channel. The cylindrical inner band 103 comprises a height which is lower than the height of the cylindrical outer band 196 . In one embodiment, the height of the inner cylindrical band 103 is about one-fifth the height of the outer cylindrical band 196 . In one embodiment, the middle portion 1014 has a notch 1040 . In one embodiment, the cylindrical outer band 196 has a plurality of gas holes 1042 .

在一實施例中,基底板198具有以箭頭“G”圖示的一外直徑。在一實施例中,基底板198的外直徑“G”介於約17吋(43.2公分)至約17.4吋(44.2公分)之間。在另一實施例中,基底板198的外直徑“G”介於約17.1吋(43.4公分)至約17.2吋(43.7公分)之間。在一實施例中,基底板198具有以箭頭“I”圖示的一內直徑。在一實施例中,基底板198的內直徑“I”介於約13.9吋(35.3公分)至約14.4吋(36.6公分)之間。在另一實施例中,基底板198的內直徑“I”介於約14吋(35.6公分)至約14.1吋(35.8公分)之間。In one embodiment, base plate 198 has an outer diameter illustrated by arrow "G". In one embodiment, the outer diameter "G" of the base plate 198 is between about 17 inches (43.2 cm) and about 17.4 inches (44.2 cm). In another embodiment, the outer diameter "G" of the base plate 198 is between about 17.1 inches (43.4 cm) and about 17.2 inches (43.7 cm). In one embodiment, base plate 198 has an inner diameter illustrated by arrow "I". In one embodiment, the inner diameter "I" of the base plate 198 is between about 13.9 inches (35.3 cm) and about 14.4 inches (36.6 cm). In another embodiment, the inner diameter "I" of the base plate 198 is between about 14 inches (35.6 cm) and about 14.1 inches (35.8 cm).

在一實施例中,內側圓柱狀帶103具有以箭頭“H”圖示的一外直徑。在一實施例中,內側圓柱狀帶的外直徑“H”介於約14.0吋(35.6公分)至約14.3吋(36.3公分)之間。在另一實施例中,內側圓柱狀帶103具有以箭頭“H”圖示的一外直徑。在一實施例中,內側圓柱狀帶103的外直徑“H”介於約14.2吋(36.1公分)至約14.3吋(36.3公分)之間。In one embodiment, the inner cylindrical band 103 has an outer diameter illustrated by arrow "H". In one embodiment, the outer diameter "H" of the inner cylindrical band is between about 14.0 inches (35.6 cm) and about 14.3 inches (36.3 cm). In another embodiment, the inner cylindrical band 103 has an outer diameter illustrated by arrow "H". In one embodiment, the outer diameter "H" of the inner cylindrical band 103 is between about 14.2 inches (36.1 cm) and about 14.3 inches (36.3 cm).

在一實施例中,圓柱狀外側帶196、基底板198、及內側圓柱狀帶103包含一單一結構。單一下屏蔽180係優於習知包括多個部件(通常以二或三個個別的片段來組裝整個下屏蔽)的屏蔽。舉例來說,在加熱及冷卻製程中,單一片段屏蔽較多部件的屏蔽更為熱均勻。舉例來說,單一片段下屏蔽與腔室壁150僅具有一個熱接觸面,從而更能控制屏蔽180與腔室壁150之間的熱交換。具有多個屏蔽部件的屏蔽180使清潔時移除屏蔽變得更為困難及費力。單一片段屏蔽180具有暴露於濺射沉積的連續表面而不具有難以清潔的介面或角落。單一片段屏蔽180也可有效地在製程循環期間屏蔽腔室壁150免於濺射沉積。In one embodiment, cylindrical outer band 196, base plate 198, and inner cylindrical band 103 comprise a unitary structure. The single lower shield 180 is superior to conventional shields that include multiple parts (usually two or three individual pieces to assemble the entire lower shield). For example, a single segment shielding more parts is more thermally uniform during the heating and cooling process. For example, a single segment lower shield has only one thermal contact surface with the chamber wall 150 so that the heat exchange between the shield 180 and the chamber wall 150 is more controlled. Shield 180 having multiple shield parts makes it more difficult and laborious to remove the shield for cleaning. The single segment shield 180 has a continuous surface exposed to sputter deposition without hard to clean interfaces or corners. The single segment shield 180 is also effective in shielding the chamber wall 150 from sputter deposition during process cycles.

在一實施例中,上屏壁186、886及(或)下屏壁180可由300系列不銹鋼製成,或在其他實施例中,可由鋁製成。在一實施例中,上屏壁186、886及(或)下屏壁180的暴露表面是以CLEANCOATTW處理,其可購自加州聖塔克拉拉的Applied Materials公司。CLEANCOATTW是施加至基材處理腔室部件(例如,上屏壁186、886及(或)下屏壁180)的雙芯鋁電弧噴塗(twin-wire aluminum arc spray coating),以減少粒子脫落而沉積在屏蔽上,從而防止腔室中之基材的污染。在一實施例中,在上屏壁186、886及(或)下屏壁180上的雙芯鋁電弧噴塗具有自約600至約2300微吋的表面粗糙度。In one embodiment, the upper shield 186, 886 and/or the lower shield 180 can be made of 300 series stainless steel, or in other embodiments, can be made of aluminum. In one embodiment, the exposed surfaces of the upper shields 186, 886 and/or the lower shield 180 are treated with CLEANCOATTW, which is available from Applied Materials, Inc. of Santa Clara, CA. CLEANCOATTW is a twin-wire aluminum arc spray coating applied to substrate processing chamber components (e.g., upper barriers 186, 886 and/or lower barrier 180) to reduce particle shedding and deposition on the shield to prevent contamination of the substrate in the chamber. In one embodiment, the twin core aluminum arc spray coating on the upper shield 186, 886 and/or the lower shield 180 has a surface roughness of from about 600 to about 2300 microinches.

上屏壁186、886及(或)下屏壁180具有在腔室100、800中面對內部空間的暴露表面。在一實施例中,暴露表面經珠粒噴擊(bead blasted)以具有175±75微吋的表面粗糙度。紋理化之珠粒噴擊表面用於減少粒子脫落並防止腔室100、800內的污染。表面粗糙度的平均值是沿著暴露表面之粗糙度特徵自峰部至谷部之平均線之位移絕對值的平均。粗糙度平均值、偏斜度或其他性質可由輪廓儀來判定,該輪廓儀在暴露表面上移動針頭並產生表面上粗糙度之高度擾動的軌跡,或藉由使用自表面反射電子束之掃描電子顯微鏡來產生表面的影像。The upper screen 186 , 886 and/or the lower screen 180 have exposed surfaces facing the interior space in the chamber 100 , 800 . In one embodiment, the exposed surface is bead blasted to have a surface roughness of 175±75 microinches. The textured bead blasting surface serves to reduce particle shedding and prevent contamination within the chamber 100,800. The surface roughness average is the average of the absolute values of the displacement along the average line of the roughness features of the exposed surface from peaks to valleys. Roughness average, skewness, or other properties can be determined by a profilometer that moves a stylus over an exposed surface and produces a highly perturbed trajectory of roughness on the surface, or by scanning electron beams using reflected electron beams from the surface Microscopes to produce images of surfaces.

雖然前述是針對本發明實施例,但可在不背離本發明之基本範圍及由以下申請專利範圍所決定之範圍的情況下,發展出其他及進一步的實施例。Although the foregoing is directed to the embodiments of the present invention, other and further embodiments can be developed without departing from the basic scope of the present invention and the scope determined by the following claims.

100:腔室101:系統控制器 102:覆蓋環103:內唇部 110:準直器111:徑向支架 126:六角形壁128:孔口 129:寬度141:線圈 142:靶材143:線圈間隔物 144:配接器146:介電隔離器 148:功率源150:腔室壁 152:座153:周邊邊緣 154:基材156:功率源 158:伸縮囊160:底部腔室壁 162:氣體源164:質流控制器 170:磁控管172:磁鐵 174:基底板176:軸 180:下屏蔽182:上凸緣 184:凸緣186:上屏蔽 188:窄間隙190:突出頂部 196:管狀區段/圓柱狀外側帶198:底部區段/基底板 310:準直器320:中央區域 340:周邊區域410:準直器 420:中央區域440:周邊區域 510:準直器520:中央區域 540:周邊區域611:支架 613:管615:緊固構件 711:支架713:螺椿 715:緊固構件800:單塊準直器/製程系統 810:最佳化器部分886:單體上屏蔽 892:屏蔽部分100: chamber 101: system controller 102: Cover ring 103: Inner lip 110: collimator 111: radial support 126: hexagonal wall 128: orifice 129: Width 141: Coil 142: target 143: coil spacer 144: adapter 146: dielectric isolator 148: power source 150: chamber wall 152: seat 153: peripheral edge 154: substrate 156: power source 158: bellows 160: bottom chamber wall 162: gas source 164: mass flow controller 170: magnetron 172: magnet 174: base plate 176: shaft 180: lower shield 182: upper flange 184: flange 186: upper shield 188: narrow gap 190: protruding top 196: tubular section/cylindrical outer band 198: bottom section/base plate 310: collimator 320: central area 340: peripheral area 410: collimator 420: central area 440: peripheral area 510: collimator 520: central area 540: Surrounding area 611: Bracket 613: pipe 615: fastening member 711: bracket 713: screw tow 715: fastening member 800: monolithic collimator/process system 810: Optimizer section 886: Monolithic upper shield 892: shielding part

為讓本發明之上述特徵更明顯易懂,可配合參考實施例說明,其部分乃繪示如附圖式。須注意的是,雖然所附圖式揭露本發明特定實施例,但其並非用以限定本發明之精神與範圍,任何熟習此技藝者,當可作各種之更動與潤飾而得等效實施例。In order to make the above-mentioned features of the present invention more comprehensible, it can be described with reference to the embodiments, some of which are shown in the accompanying drawings. It should be noted that although the accompanying drawings disclose specific embodiments of the present invention, they are not intended to limit the spirit and scope of the present invention. Anyone skilled in the art can make various changes and modifications to obtain equivalent embodiments .

第1圖為具有本文所述之製程套件之一實施例之半導體製程系統的示意剖面圖。Figure 1 is a schematic cross-sectional view of a semiconductor processing system having one embodiment of the process kit described herein.

第2圖為根據本文所述實施例之準直器的俯視平面圖。Figure 2 is a top plan view of a collimator according to embodiments described herein.

第3圖為根據本文所述實施例之準直器的示意截面圖。Figure 3 is a schematic cross-sectional view of a collimator according to embodiments described herein.

第4圖為根據本文所述實施例之準直器的示意截面圖。Figure 4 is a schematic cross-sectional view of a collimator according to embodiments described herein.

第5圖為根據本文所述實施例之準直器的示意截面圖。Figure 5 is a schematic cross-sectional view of a collimator according to embodiments described herein.

第6圖為根據本文所述實施例之支架的放大部分截面圖,該支架用於將準直器附接至PVD腔室之上屏蔽。Figure 6 is an enlarged partial cross-sectional view of a bracket for attaching a collimator to a shield over a PVD chamber according to embodiments described herein.

第7圖為根據本文所述實施例之支架的部分截面圖,該支架用於將準直器附接至PVD腔室之上屏蔽。Figure 7 is a partial cross-sectional view of a bracket for attaching a collimator to a shield over a PVD chamber, according to embodiments described herein.

第8圖為具有根據本文所述另一製程套組之半導體製程系統的示意截面圖。FIG. 8 is a schematic cross-sectional view of a semiconductor processing system having another process kit according to the description herein.

第9A圖為根據本文所述實施例之單體上屏蔽的部分截面圖。Figure 9A is a partial cross-sectional view of a shield on a monolith according to embodiments described herein.

第9B圖為根據本文所述實施例之第9A圖之單體上屏蔽之俯視平面圖。Figure 9B is a top plan view of the shield on a monolith of Figure 9A according to embodiments described herein.

第10A圖根據本文所述實施例之一下屏蔽的截面圖。Figure 10A is a cross-sectional view of a lower shield according to embodiments described herein.

第10B圖為第10A圖之下屏蔽之實施例的部分剖面圖。Figure 10B is a partial cross-sectional view of an embodiment of the shield below Figure 10A.

第10C圖為第10A圖之下屏蔽之一實施例的俯視圖。Figure 10C is a top view of one embodiment of the shield below Figure 10A.

國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無Domestic deposit information (please note in order of depositor, date, and number) none Overseas storage information (please note in order of storage country, institution, date, and number) none

101:系統控制器 101: System Controller

102:覆蓋環 102: Cover ring

103:內唇部 103: inner lip

142:靶材 142: target

143:線圈間隔物 143: coil spacer

144:配接器 144: Adapter

146:介電隔離器 146: Dielectric isolator

148:功率源 148: Power source

150:腔室壁 150: chamber wall

152:座 152: seat

153:周邊邊緣 153: Perimeter edge

154:基材 154: Substrate

156:功率源 156: Power source

158:伸縮囊 158: Expansion bag

160:底部腔室壁 160: bottom chamber wall

162:氣體源 162: gas source

164:質流控制器 164: Mass flow controller

170:磁控管 170: Magnetron

172:磁鐵 172: magnet

174:基底板 174: base plate

176:軸 176: Shaft

180:下屏蔽 180: lower shield

182:上凸緣 182: Upper flange

184:凸緣 184: Flange

188:窄間隙 188: narrow gap

190:突出頂部 190: highlight the top

196:管狀區段/圓柱狀外側帶 196: tubular section/cylindrical outer band

198:底部區段/基底 198: Bottom section/base

800:單塊準直器/製程系統 800: Monoblock Collimator/Process System

810:最佳化器部分 810: Optimizer part

886:單體上屏蔽 886: shielding on the single body

892:屏蔽部分 892: shielding part

Claims (19)

一種用於一PVD腔室的準直器,包含:一蜂巢結構,該蜂巢結構具有多個平直壁,該等平直壁界定且分隔多個個別孔口,該等孔口的每一個具有由一深度和一寬度界定的一深寬比,其中該等個別孔口包括:一第一六角形孔口,在一中心區域中,具有一第一深寬比,其中該第一深寬比為從1.5:1到3:1;複數個第二非六角形孔口,在一周邊區域中,具有一第二深寬比小於該第一深寬比;及複數個第三六角形孔口,在從該周邊區域到該中心區域設置的一過渡區域中,其中該複數個第三六角形孔口的深度從該中心區域的一外邊緣減小到該周邊區域。 A collimator for a PVD chamber comprising: a honeycomb structure having a plurality of straight walls defining and separating a plurality of individual orifices, each of the orifices having an aspect ratio defined by a depth and a width, wherein the individual apertures include: a first hexagonal aperture, in a central region, having a first aspect ratio, wherein the first aspect ratio is from 1.5:1 to 3:1; a plurality of second non-hexagonal orifices having a second aspect ratio smaller than the first aspect ratio in a peripheral region; and a plurality of third hexagonal orifices , in a transition region disposed from the peripheral region to the central region, wherein the plurality of third hexagonal apertures decrease in depth from an outer edge of the central region to the peripheral region. 如請求項1所述之準直器,其中該蜂巢結構界定一倒圓錐形形狀,該倒圓錐形形狀沿著該過渡區域從該中央區域的一外邊緣到該周邊區域的一內邊緣延伸。 The collimator of claim 1, wherein the honeycomb structure defines an inverted conical shape extending along the transition region from an outer edge of the central region to an inner edge of the peripheral region. 如請求項1所述之準直器,包含選自鋁、銅和不銹鋼的一材料。 The collimator as claimed in claim 1, comprising a material selected from aluminum, copper and stainless steel. 如請求項1所述之準直器,其中該等壁的一 厚度在0.06英寸和0.18英寸之間。 The collimator as claimed in claim 1, wherein one of the walls Thickness between 0.06 inches and 0.18 inches. 如請求項4所述之準直器,其中該等壁的一厚度在0.12英寸和0.15英寸之間。 4. The collimator of claim 4, wherein a thickness of the walls is between 0.12 inches and 0.15 inches. 如請求項1所述之準直器,其中該等非六角形孔口位於該蜂巢結構的一外周邊處。 The collimator as claimed in claim 1, wherein the non-hexagonal openings are located at an outer periphery of the honeycomb structure. 如請求項6所述之準直器,其中該等非六角形孔口的至少六個非六角形孔口具有相同的最大寬度尺寸。 The collimator according to claim 6, wherein at least six of the non-hexagonal openings have the same maximum width dimension. 如請求項7所述之準直器,其中該等非六角形孔口的該至少六個非六角形孔口圍繞該蜂巢結構的該外周邊對稱地分佈。 The collimator as claimed in claim 7, wherein the at least six non-hexagonal openings of the non-hexagonal openings are symmetrically distributed around the outer periphery of the honeycomb structure. 一種用於一PVD腔室的上屏蔽,包含:如請求項1所述之準直器;及一屏蔽部分。 An upper shield for a PVD chamber, comprising: the collimator as described in Claim 1; and a shielding part. 如請求項9所述之上屏蔽,其中該準直器經過一支架而耦合至該屏蔽部分,該支架包含:一外螺紋構件;及一內螺紋構件,該內螺紋構件與該外螺紋構件嚙合。 The upper shield as claimed in claim 9, wherein the collimator is coupled to the shield portion through a bracket, the bracket comprising: an externally threaded member; and an internally threaded member, the internally threaded member engaging the externally threaded member . 如請求項9所述之上屏蔽,其中該準直器焊接至該屏蔽部分。 The upper shield as claimed in claim 9, wherein the collimator is welded to the shield portion. 如請求項9所述之上屏蔽,其中該屏蔽部分與該準直器是由一單塊鋁機械加工成形。 The upper shield as claimed in claim 9, wherein the shield portion and the collimator are machined from a single piece of aluminum. 如請求項9所述之上屏蔽,其中該屏蔽部分包含自一圓柱狀帶向外延伸的一支撐凸緣。 The upper shield as claimed in claim 9, wherein the shield portion includes a support flange extending outwardly from a cylindrical band. 如請求項13所述之上屏蔽,其中該支撐凸緣包含環繞該圓柱狀帶呈週期性定位的一或多個凹口。 The upper shield as recited in claim 13, wherein the support flange includes one or more notches positioned periodically around the cylindrical band. 一種沉積設備,包含:電接地的一腔室;一濺射靶材,由該腔室支撐並與該腔室電氣隔離並電耦合至一DC功率源;一基材支撐座,定位在該濺射靶材的下方,並具有平行於該濺射靶材的一濺射表面的一基材支撐表面,其中該基材支撐座電耦合至一RF功率源;一準直器,定位在該濺射靶材與該基材支撐座之間,其中該準直器具有一蜂巢結構,該蜂巢結構具有多個平直壁,該等平直壁界定且分隔多個個別孔口,該等孔口的每一個具有由一深度和一寬度界定的一深寬比,其中 該等個別孔口包括:一第一六角形孔口,在一中心區域中,具有一第一深寬比,其中該第一深寬比為從1.5:1到3:1;複數個第二非六角形孔口,在一周邊區域中,具有一第二深寬比小於該第一深寬比;及複數個第三六角形孔口,在從該周邊區域到該中心區域設置的一過渡區域中,其中該複數個第三六角形孔的深度沿著該過渡區域從該中心區域的一外邊緣減小到該周邊區域。 A deposition apparatus comprising: a chamber electrically grounded; a sputter target supported by and electrically isolated from the chamber and electrically coupled to a DC power source; a substrate support positioned on the sputter The bottom of the sputtering target and has a substrate support surface parallel to a sputtering surface of the sputtering target, wherein the substrate support is electrically coupled to an RF power source; a collimator is positioned on the sputtering Between the shooting target and the substrate support, wherein the collimator has a honeycomb structure with a plurality of straight walls defining and separating a plurality of individual orifices, the orifices Each has an aspect ratio defined by a depth and a width, where The individual orifices include: a first hexagonal orifice having a first aspect ratio in a central region, wherein the first aspect ratio is from 1.5:1 to 3:1; a plurality of second non-hexagonal apertures in a peripheral region having a second aspect ratio less than the first aspect ratio; and a plurality of third hexagonal apertures disposed at a transition from the peripheral region to the central region region, wherein the depth of the plurality of third hexagonal holes decreases along the transition region from an outer edge of the central region to the peripheral region. 如請求項15所述之設備,進一步包含:一氣體源;及一控制器,經程式化而提供多個信號以控制該氣體源、該DC功率源和該RF功率源,其中該控制器經程式化以提供偏壓至該基材支撐座。 The apparatus of claim 15, further comprising: a gas source; and a controller programmed to provide a plurality of signals to control the gas source, the DC power source, and the RF power source, wherein the controller via Programmed to provide a bias voltage to the substrate support. 如請求項16所述之設備,進一步包含:一RF線圈,其中該控制器經程式化以提供多個信號以控制該RF功率源,使得該基材支撐座的偏壓交替,且其中該控制器經程式化以控制供應至該RF線圈的功率和該氣體源,以控制該腔室中的二級電漿。 The apparatus of claim 16, further comprising: an RF coil, wherein the controller is programmed to provide a plurality of signals to control the RF power source such that the bias voltage of the substrate support alternates, and wherein the control The instrument is programmed to control the power supplied to the RF coil and the gas source to control the secondary plasma in the chamber. 一種將材料沉積到一基材上的方法,包含以下步驟: 在具有一準直器的一腔室中向一濺射靶材施加一DC偏壓,該準直器定位在該濺射靶材和一基材支撐座之間,其中該準直器具有一蜂巢結構,該蜂巢結構具有多個平直壁,該等平直壁界定且分隔多個個別孔口,該等孔口的每一個具有由一深度和一寬度界定的一深寬比,其中該等個別孔口包括:一第一六角形孔口,在一中心區域中,具有一第一深寬比,其中該第一深寬比為從1.5:1到3:1;複數個第二非六角形孔口,在一周邊區域中,具有一第二深寬比小於該第一深寬比;及複數個第三六角形孔口,在從該周邊區域到該中心區域設置的一過渡區域中,其中該複數個第三六角形孔的深度沿著該過渡區域從該中心區域的一外邊緣減小到該周邊區域;在該腔室內與該濺射靶材相鄰的一區域中提供一製程氣體;向該基材支撐座施加一偏壓;及在具有不同幅度的多個偏壓之間對施加到該基材支撐座的該偏壓產生脈衝。 A method of depositing material onto a substrate comprising the steps of: A DC bias is applied to a sputtering target in a chamber having a collimator positioned between the sputtering target and a substrate support, wherein the collimator has a honeycomb structure having a plurality of straight walls defining and separating a plurality of individual orifices, each of the orifices having an aspect ratio defined by a depth and a width, wherein the The individual orifices include: a first hexagonal orifice having a first aspect ratio in a central region, wherein the first aspect ratio is from 1.5:1 to 3:1; a plurality of second non-hexagonal orifices angular apertures in a peripheral region having a second aspect ratio less than the first aspect ratio; and a plurality of third hexagonal apertures in a transition region disposed from the peripheral region to the central region , wherein the depth of the plurality of third hexagonal holes decreases along the transition region from an outer edge of the central region to the peripheral region; providing a region in the chamber adjacent to the sputtering target process gas; applying a bias voltage to the substrate support; and pulsing the bias voltage applied to the substrate support between a plurality of bias voltages having different magnitudes. 如請求項18所述之方法,進一步包含以下步驟:向位於該腔室內側的一RF線圈施加功率,以在該腔室內側提供二級電漿,其中該複數個第三六角形孔口的該深寬比從該中心區域連續減小到該周邊區域。 The method as claimed in claim 18, further comprising the step of: applying power to an RF coil located inside the chamber to provide a secondary plasma inside the chamber, wherein the plurality of third hexagonal orifices The aspect ratio decreases continuously from the central region to the peripheral region.
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