SG10202003396PA - Biasable flux optimizer/collimator for pvd sputter chamber - Google Patents
Biasable flux optimizer/collimator for pvd sputter chamberInfo
- Publication number
- SG10202003396PA SG10202003396PA SG10202003396PA SG10202003396PA SG10202003396PA SG 10202003396P A SG10202003396P A SG 10202003396PA SG 10202003396P A SG10202003396P A SG 10202003396PA SG 10202003396P A SG10202003396P A SG 10202003396PA SG 10202003396P A SG10202003396P A SG 10202003396PA
- Authority
- SG
- Singapore
- Prior art keywords
- biasable
- collimator
- sputter chamber
- pvd sputter
- flux optimizer
- Prior art date
Links
- 230000004907 flux Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32403—Treating multiple sides of workpieces, e.g. 3D workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562246967P | 2015-10-27 | 2015-10-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10202003396PA true SG10202003396PA (en) | 2020-06-29 |
Family
ID=58562020
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201802667PA SG11201802667PA (en) | 2015-10-27 | 2016-09-27 | Biasable flux optimizer/collimator for pvd sputter chamber |
SG10202003396PA SG10202003396PA (en) | 2015-10-27 | 2016-09-27 | Biasable flux optimizer/collimator for pvd sputter chamber |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201802667PA SG11201802667PA (en) | 2015-10-27 | 2016-09-27 | Biasable flux optimizer/collimator for pvd sputter chamber |
Country Status (8)
Country | Link |
---|---|
US (4) | US9960024B2 (en) |
EP (3) | EP4235744A3 (en) |
JP (2) | JP7034912B2 (en) |
KR (1) | KR102695398B1 (en) |
CN (6) | CN206418192U (en) |
SG (2) | SG11201802667PA (en) |
TW (4) | TWI669752B (en) |
WO (1) | WO2017074633A1 (en) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4235744A3 (en) | 2015-10-27 | 2023-10-11 | Applied Materials, Inc. | Biasable flux optimizer/collimator for pvd sputter chamber |
CN109390222B (en) * | 2017-08-08 | 2021-01-05 | 宁波江丰电子材料股份有限公司 | Collimator gauge and using method thereof |
USD859333S1 (en) | 2018-03-16 | 2019-09-10 | Applied Materials, Inc. | Collimator for a physical vapor deposition chamber |
USD858468S1 (en) | 2018-03-16 | 2019-09-03 | Applied Materials, Inc. | Collimator for a physical vapor deposition chamber |
US20190353919A1 (en) * | 2018-05-21 | 2019-11-21 | Applied Materials, Inc. | Multi-zone collimator for selective pvd |
WO2020088415A1 (en) * | 2018-10-31 | 2020-05-07 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing device |
CN109300764A (en) * | 2018-10-31 | 2019-02-01 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
USD937329S1 (en) | 2020-03-23 | 2021-11-30 | Applied Materials, Inc. | Sputter target for a physical vapor deposition chamber |
USD998575S1 (en) | 2020-04-07 | 2023-09-12 | Applied Materials, Inc. | Collimator for use in a physical vapor deposition (PVD) chamber |
CN112011776B (en) * | 2020-08-28 | 2022-10-21 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and process chamber thereof |
US11851751B2 (en) * | 2021-07-23 | 2023-12-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Deposition system and method |
USD1009816S1 (en) | 2021-08-29 | 2024-01-02 | Applied Materials, Inc. | Collimator for a physical vapor deposition chamber |
USD997111S1 (en) | 2021-12-15 | 2023-08-29 | Applied Materials, Inc. | Collimator for use in a physical vapor deposition (PVD) chamber |
USD1038901S1 (en) * | 2022-01-12 | 2024-08-13 | Applied Materials, Inc. | Collimator for a physical vapor deposition chamber |
USD1026054S1 (en) * | 2022-04-22 | 2024-05-07 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
CN115449762A (en) * | 2022-08-22 | 2022-12-09 | 无锡尚积半导体科技有限公司 | Collimator for magnetron sputtering equipment and magnetron sputtering equipment |
USD1025935S1 (en) * | 2022-11-03 | 2024-05-07 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
USD1025936S1 (en) * | 2022-12-16 | 2024-05-07 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
USD1026839S1 (en) * | 2022-12-16 | 2024-05-14 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
USD1024149S1 (en) * | 2022-12-16 | 2024-04-23 | Applied Materials, Inc. | Collimator for a physical vapor deposition (PVD) chamber |
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US5223108A (en) * | 1991-12-30 | 1993-06-29 | Materials Research Corporation | Extended lifetime collimator |
JPH06295903A (en) * | 1993-02-09 | 1994-10-21 | Matsushita Electron Corp | Sputtering device |
US5362372A (en) | 1993-06-11 | 1994-11-08 | Applied Materials, Inc. | Self cleaning collimator |
US5380414A (en) | 1993-06-11 | 1995-01-10 | Applied Materials, Inc. | Shield and collimator pasting deposition chamber with a wafer support periodically used as an acceptor |
US5415753A (en) | 1993-07-22 | 1995-05-16 | Materials Research Corporation | Stationary aperture plate for reactive sputter deposition |
US5431799A (en) | 1993-10-29 | 1995-07-11 | Applied Materials, Inc. | Collimation hardware with RF bias rings to enhance sputter and/or substrate cavity ion generation efficiency |
KR970009828B1 (en) | 1994-02-23 | 1997-06-18 | Sansung Electronics Co Ltd | Fabrication method of collimator |
EP0703598A1 (en) * | 1994-09-26 | 1996-03-27 | Applied Materials, Inc. | Electrode between sputtering target and workpiece |
JPH08260139A (en) * | 1995-03-23 | 1996-10-08 | Sony Corp | Collimator for film formation, film forming device and production of electronic device |
KR970017999A (en) * | 1995-09-29 | 1997-04-30 | 김광호 | Sputtering device with improved collimator |
US5650052A (en) | 1995-10-04 | 1997-07-22 | Edelstein; Sergio | Variable cell size collimator |
KR970017999U (en) | 1995-10-23 | 1997-05-23 | Fully automatic washing machine | |
US5658442A (en) | 1996-03-07 | 1997-08-19 | Applied Materials, Inc. | Target and dark space shield for a physical vapor deposition system |
US6482301B1 (en) | 1998-06-04 | 2002-11-19 | Seagate Technology, Inc. | Target shields for improved magnetic properties of a recording medium |
US6362097B1 (en) | 1998-07-14 | 2002-03-26 | Applied Komatsu Technlology, Inc. | Collimated sputtering of semiconductor and other films |
US6149776A (en) | 1998-11-12 | 2000-11-21 | Applied Materials, Inc. | Copper sputtering target |
US20030015421A1 (en) | 2001-07-20 | 2003-01-23 | Applied Materials, Inc. | Collimated sputtering of cobalt |
US20030029715A1 (en) | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
JP2005504885A (en) | 2001-07-25 | 2005-02-17 | アプライド マテリアルズ インコーポレイテッド | Barrier formation using a novel sputter deposition method |
US7048837B2 (en) | 2002-09-13 | 2006-05-23 | Applied Materials, Inc. | End point detection for sputtering and resputtering |
WO2004047160A1 (en) | 2002-11-20 | 2004-06-03 | Renesas Technology Corp. | Method of fabricating semiconductor device |
JP2007273490A (en) * | 2004-03-30 | 2007-10-18 | Renesas Technology Corp | Method of manufacturing semiconductor integrated circuit device |
EP1710324B1 (en) | 2005-04-08 | 2008-12-03 | STMicroelectronics S.r.l. | PVD process and chamber for the pulsed deposition of a chalcogenide material layer of a phase change memory device |
US7355192B2 (en) * | 2006-03-30 | 2008-04-08 | Intel Corporation | Adjustable suspension assembly for a collimating lattice |
US9062379B2 (en) | 2008-04-16 | 2015-06-23 | Applied Materials, Inc. | Wafer processing deposition shielding components |
JP5916384B2 (en) | 2008-04-16 | 2016-05-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Wafer processing deposit shielding component |
US9316413B2 (en) | 2008-06-11 | 2016-04-19 | Honeywell International Inc. | Selectable efficiency versus comfort for modulating furnace |
US20090308739A1 (en) * | 2008-06-17 | 2009-12-17 | Applied Materials, Inc. | Wafer processing deposition shielding components |
KR20150137131A (en) | 2008-06-17 | 2015-12-08 | 어플라이드 머티어리얼스, 인코포레이티드 | Apparatus and method for uniform deposition |
KR102374073B1 (en) * | 2009-04-24 | 2022-03-11 | 어플라이드 머티어리얼스, 인코포레이티드 | Wafer processing deposition shielding components |
JP5865483B2 (en) * | 2012-03-14 | 2016-02-17 | キヤノンアネルバ株式会社 | Fastening member and vacuum device |
US9831074B2 (en) | 2013-10-24 | 2017-11-28 | Applied Materials, Inc. | Bipolar collimator utilized in a physical vapor deposition chamber |
JP6295903B2 (en) | 2014-01-22 | 2018-03-20 | 株式会社デンソー | Rotary operation device |
US9543126B2 (en) * | 2014-11-26 | 2017-01-10 | Applied Materials, Inc. | Collimator for use in substrate processing chambers |
EP4235744A3 (en) * | 2015-10-27 | 2023-10-11 | Applied Materials, Inc. | Biasable flux optimizer/collimator for pvd sputter chamber |
-
2016
- 2016-09-27 EP EP23175161.1A patent/EP4235744A3/en active Pending
- 2016-09-27 WO PCT/US2016/053970 patent/WO2017074633A1/en active Application Filing
- 2016-09-27 JP JP2018521365A patent/JP7034912B2/en active Active
- 2016-09-27 US US15/277,674 patent/US9960024B2/en active Active
- 2016-09-27 SG SG11201802667PA patent/SG11201802667PA/en unknown
- 2016-09-27 KR KR1020187014899A patent/KR102695398B1/en active IP Right Grant
- 2016-09-27 EP EP21188409.3A patent/EP3920210B1/en active Active
- 2016-09-27 EP EP16860473.4A patent/EP3369108B1/en active Active
- 2016-09-27 SG SG10202003396PA patent/SG10202003396PA/en unknown
- 2016-10-27 CN CN201621180242.4U patent/CN206418192U/en active Active
- 2016-10-27 TW TW105134741A patent/TWI669752B/en active
- 2016-10-27 TW TW108124712A patent/TWI702636B/en active
- 2016-10-27 CN CN201610958470.8A patent/CN106987815A/en active Pending
- 2016-10-27 TW TW109124539A patent/TWI761889B/en active
- 2016-10-27 CN CN202410177120.2A patent/CN118127471A/en active Pending
- 2016-10-27 CN CN202410177114.7A patent/CN118127470A/en active Pending
- 2016-10-27 CN CN201910698016.7A patent/CN110438464A/en active Pending
- 2016-10-27 TW TW111114403A patent/TWI839710B/en active
- 2016-10-27 CN CN202010731212.2A patent/CN112030123A/en active Pending
-
2018
- 2018-03-29 US US15/940,398 patent/US10347474B2/en active Active
-
2019
- 2019-05-30 US US16/426,964 patent/US10727033B2/en active Active
-
2020
- 2020-06-24 US US16/910,151 patent/US11309169B2/en active Active
-
2022
- 2022-03-02 JP JP2022031654A patent/JP7504938B2/en active Active
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