JPH11200029A - Sputtering device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sputtering device capable of uniformizing the film thickness of a thin film to be formed on the surface of a substrate and furthermore capable of realizing the miniaturization of the device. SOLUTION: In a sputtering device, the space between a target 16 and a substrate 17 in a vacuum vessel 11 is provided with a film forming amt. regulating board 20. The film forming amt. regulating board 20 almost continuously reduces the passing amt. of film forming particles turned out from the target 16 toward the surface of the substrate 17 from the edge of the substrate 17 toward the center of the substrate 17 and almost uniformly regulates the film forming amt. in the surface of the substrate 17. The film forming amt. regulating board 20 is provided with an opening in which the opening size continuously reduces from the edge toward the center. Moreover, the film forming amt. regulating board is formed in a shape in which it is continuously thickened from the edge toward the center.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus for forming a thin film, and more particularly, to a sputtering apparatus capable of controlling the amount of film-forming particles struck out of a target and controlling the amount of the thin film formed on a substrate surface. Related to the device.

[0002]

2. Description of the Related Art Sputtering is widely used as a method for forming thin films such as insulators, semiconductors, and conductors.
In the sputtering method, the target is physically hit and a thin film is formed on the substrate surface by the hitting film-forming particles. Therefore, there is no limitation on the material used for forming the thin film by the chemical reaction, for example, the CVD method. . Further, the sputtering method has a feature that a thin film having a uniform thickness can be formed on the surface of a flat substrate such as a semiconductor wafer or a glass substrate.

There are various types of sputtering apparatuses for performing sputtering, as shown in FIGS. FIG. 17 is a schematic configuration diagram of a sputtering apparatus employing a two-electrode sputtering method. This sputtering apparatus has a first electrode 4 on the upper side and a second electrode (substrate support base) 5 on the lower side in a vacuum vessel (chamber) 1, and a target 6 attached to the first electrode 4. Second
Plasma discharge is generated by facing the substrate 7 supported by the electrode 5. The first electrode 4 has a high frequency power source 8
, And the second electrode 5 is grounded.
A gas introduction pipe 2 for supplying an inert gas (for example, Ar gas) for generating a plasma discharge is connected to the vacuum vessel 1. Furthermore, a vacuum exhaust pipe 3A connected to a vacuum source (not shown) and a gas exhaust pipe 3B for discharging exhaust gas are connected to the vacuum vessel 1.

FIG. 18 is a schematic structural view of a sputtering apparatus employing a magnetron sputtering method. In this sputtering apparatus, a permanent magnet 9 is disposed on the first electrode 4 on the back surface of the target 6, plasma is confined in a closed magnetic field generated by the permanent magnet 9, and the amount of film-forming particles generated from the target 6 is reduced. Increase and perform high-speed film formation.

FIG. 19 is a schematic diagram of a sputtering apparatus employing a facing target type sputtering system. In this sputtering apparatus, a third electrode 4A is opposed to the first electrode 4, and a plasma discharge is generated between a pair of targets 6 and 6A attached to the first electrode 4 and the third electrode 4A, respectively. , 6A, a thin film is formed on the surface of the substrate 7 using the film-forming particles. A DC power supply 8D is provided between the first electrode 4 and the third electrode 4A.

FIG. 20 is a schematic configuration diagram of a sputtering apparatus employing a collimation sputtering method. This sputtering apparatus has the same basic structure as the sputtering apparatus shown in FIG.
A collimator plate 10 is disposed between the substrate and the substrate 7. As shown in FIG. 21 (a plan view of the collimator plate), the collimator plate 10 is disposed in parallel with each of the target 6 and the substrate 7 and has a constant plate thickness. Are arranged in a plurality. The collimator plate 10 has a function of reducing film-forming particles having an oblique component at the incident angle with respect to the surface of the substrate 7. This type of sputtering apparatus is particularly suitable for thin film deposition such as a magnetic thin film deposition process that requires a constant magnetization direction or a metal thin film deposition process in a contact hole of a semiconductor device that requires a high aspect ratio. used.

[0007]

However, the following points are not considered in each of the sputtering apparatuses shown in FIGS. 17 to 20 described above.

Usually, the thickness of the thin film formed on the surface of the substrate 7 by the sputtering apparatus is large at the center of the surface of the substrate 7 and gradually decreases toward the edge of the substrate 7. In a manufacturing process, for example, a semiconductor manufacturing process, uniformization of the film thickness formed on the substrate 7 is an important factor in order to increase the yield. Therefore, the following method has been adopted for the purpose of making the film thickness uniform.

(1) A method of increasing the size of the target 6.

(2) A method in which the facing distance between the target 6 and the substrate 7 is increased.

(3) A method of forming a film while rotating the substrate 7.

However, it is fundamentally difficult to make the film thickness completely uniform in any of the methods. Particularly, both the method of increasing the size of the target 6 and the method of increasing the facing distance make the vacuum vessel 1 itself large. Therefore, there is a problem that the sputtering apparatus becomes large. Further, the method of forming a film while rotating the substrate 7 has a problem that a mechanism for rotating the substrate 7 is provided, so that the size of the sputtering apparatus is increased and the structure of the sputtering apparatus is complicated.
When the size of the sputtering apparatus is increased, a large amount of time and power is consumed for, for example, evacuating the vacuum chamber 1 or performing plasma discharge, so that the running cost of the manufacturing process increases.

The present invention has been made to solve the above problems. Accordingly, an object of the present invention is to provide a sputtering apparatus capable of making the thickness of a thin film formed on a substrate surface uniform and realizing miniaturization of the apparatus.

It is a further object of the present invention to provide a sputtering apparatus which can make a thin film formed on a substrate surface uniform, and which can simplify the structure of the apparatus to realize a compact apparatus.

Still another object of the present invention is to provide a sputtering apparatus capable of reducing the running cost of a manufacturing process.

[0016]

In order to solve the above-mentioned problems, the present invention provides a sputtering apparatus which is disposed between a target and a substrate in a vacuum vessel and is knocked out from the target toward the substrate surface. A film formation amount adjustment plate provided with a plurality of openings that adjust the amount of film-forming particles to pass through, and the opening size is continuously reduced from a position corresponding to the substrate edge to a position corresponding to the substrate center; It is characterized by.

In the sputtering apparatus according to the present invention, the film formation amount adjusting plate can increase the amount of film formation particles passing almost continuously from the center of the substrate toward the end of the substrate. With an extremely simple configuration including the amount adjusting plate, the amount of film formation on the substrate surface (thickness of the formed thin film) can be made substantially uniform over the entire surface of the substrate. Moreover, the use of a large target for obtaining a uniform film formation amount on the substrate surface, an increase in the facing distance between the target and the substrate, and the rotation mechanism of the substrate are eliminated, so that the sputtering apparatus can be downsized and the sputtering apparatus can be downsized. Is simplified.

Furthermore, in the sputtering apparatus configured as described above, even at the same position on the substrate surface, the larger the opening size of the opening provided on the film formation amount adjusting plate, the larger the passing of the film forming particles having an oblique component in the incident angle. The amount can be increased, and the smaller the aperture size, the smaller the amount of film-forming particles having an oblique component at the incident angle. By combining this characteristic with the characteristic that the film deposition amount continuously decreases from the center to the edge of the substrate surface, by performing adjustment that the film deposition amount continuously decreases from the edge of the substrate surface toward the center Thus, a thin film having a uniform thickness can be formed over the entire surface of the substrate. The downsizing and simplification of the structure of the sputtering apparatus according to the features of the present invention all contribute to a reduction in the running cost of the manufacturing process.

In the present invention, the film-forming-amount adjusting plate may simply be constituted by a structure having a substantially uniform plate thickness and a plurality of openings whose opening sizes gradually change. However, the film thickness control plate may have a plate thickness that continuously increases from a position corresponding to the substrate edge toward a position corresponding to the substrate center.

As described above, in a sputtering apparatus in which the deposition amount adjusting plate is configured to have a plate thickness that continuously increases from a position corresponding to the substrate edge toward a position corresponding to the substrate center, Even at the same position, the thickness of the film formation amount control plate, that is, the smaller the opening depth of the opening (the same opening size) provided in the film formation amount control plate, the smaller the penetration amount of the film formation particles having an oblique component in the incident angle. As the opening depth increases, the amount of film-forming particles having oblique components at the incident angle decreases. This characteristic is combined with the characteristic that the film deposition amount continuously decreases from the center to the edge of the substrate surface in a normal sputtering method, and the film deposition amount continuously decreases from the edge of the substrate surface toward the center. By performing the adjustment, a thin film can be formed with a uniform thickness over the entire surface of the substrate.
In this case, the film formation amount adjusting plate may have a plurality of openings having a substantially uniform opening size, and may be formed of a simple structure in which the plate thickness changes gradually. Can be reduced in size, and the structure of the sputtering apparatus can be simplified.

[0021]

DESCRIPTION OF THE PREFERRED EMBODIMENTS (First Embodiment) A first embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic configuration diagram of a sputtering apparatus according to a first embodiment of the present invention. The sputtering apparatus shown in FIG. 1 employs a two-electrode sputtering method. The sputtering apparatus includes a vacuum vessel 11, a gas introduction pipe 12,
Vacuum exhaust pipe 13A, gas exhaust pipe 13B, first electrode 14,
Second electrode 15 also used as substrate support, power supply 1
8. A film formation amount adjusting plate 20 is provided.

In the vacuum vessel 11, a first electrode 14 is provided on the upper side in the figure, and a second electrode 15 is provided on the lower side so as to face the first electrode 14. The first electrode 14 is a power source 18
DC voltage or high-frequency voltage is supplied from
A target 16 serving as a source of film-forming particles is attached to the first electrode 14. The second electrode 15 is grounded, and a substrate 17 for forming a thin film is attached to the second electrode 15. As the substrate 17, for example, a substrate such as a semiconductor substrate (semiconductor wafer), a glass substrate, a non-magnetic substrate, and a wiring substrate is used.

One end of the gas introduction pipe 12 is connected to the vacuum vessel 11, and the other end is connected to a gas supply source (not shown). The gas supply source supplies an inert gas, for example, an Ar gas, for generating a plasma discharge into the inside of the vacuum vessel 11. One end of the vacuum exhaust pipe 13A is connected to the vacuum vessel 11, and the other end is connected to a vacuum source (not shown). The vacuum source evacuates the vacuum chamber 11. The gas exhaust pipe 13B is the vacuum vessel 1
The gas in 1 is exhausted to the outside.

The deposition amount adjusting plate 20 is provided between the target 16 and the substrate 17, that is, between the first electrode 14 and the second electrode 15. FIG. 2 is a plan view of the film formation amount adjustment plate 20. The film formation amount adjusting plate 20 is formed in a circular planar shape and has a substantially uniform plate thickness, and both the front and back surfaces of the film formation amount adjusting plate 20 are substantially parallel to the surface of the target 16 (or the substrate 17). Settings have been made. A plurality of openings 20 </ b> H whose opening size continuously decreases from the end toward the center of the film formation amount adjustment plate 20 are provided. Here, the center of the film formation amount adjustment plate 20 is a position corresponding to the center of the substrate 17, and the end of the film formation amount adjustment plate 20 is a position corresponding to the end of the substrate 15. In the present embodiment, the opening 20H penetrates in the plate thickness direction and has a circular opening shape. The shape of the opening 20H is not limited to this round shape, but may be square,
It may be formed of any one of a polygon and an ellipse.

The film forming amount adjusting plate 20 controls the amount of film forming particles passing therethrough in the thickness direction by the opening 20H.
By continuously increasing the opening size of H from the center to the end, the film thickness of the thin film decreases continuously from the surface edge of the substrate 17 toward the center of the surface (thickness of the thin film to be formed) The thickness of the film is uniformly adjusted over the entire surface of the substrate 17.

FIG. 3 is a schematic configuration diagram of a sputtering apparatus for explaining an experiment performed to verify the uniformity of the film formation amount by the film formation amount adjusting plate 20, and FIG. 4 is a test component used in this experiment. It is a top view of a film amount adjusting plate. As shown in FIG. 3, basically, similarly to the sputtering apparatus shown in FIG.
6 and the substrate 17. As shown in FIG. 4, a total of four openings 20H1 to 20H4 of four types having different round sizes and different opening sizes (diameters) are provided on the test film formation amount adjusting plate 20T. The diameter of the opening 20H1 is set to 4 mm, the diameter of the opening 20H2 is set to 6 mm, the diameter of the opening 20H3 is set to 8 mm, and the diameter of the opening 20H4 is set to 10 mm. The openings 20H1 to 20H4 have their centers set at the same distance from the center of the test film formation amount adjusting plate 20T, and the effect of a continuous decrease in the film formation amount from the center to the edge of the substrate 17 is excluded. . Opening 20H1-20H4
Are arranged every 90 degrees. When sputtering is performed using the test film formation amount adjusting plate 20T, the opening 20H
The thin film 17F corresponding to each of the openings 20H1-20H4 is formed on the surface of the substrate 17 by the film-forming particles passing through each of the 1-20H4. These four types of openings 20
Thin film 17 formed through each of H1-20H4
By measuring the film thickness of F, it is possible to measure the film thickness difference between the four types of thin films 17F formed with four types of opening sizes by one-time sputtering.

The other dimensions of the test film formation amount adjusting plate 20T are as follows.

(1) Thickness of test film formation amount adjusting plate 20T: 4 mm (2) Opening 20 from the center of test film formation amount adjustment plate 20T
Distance to the center of each of H1-20H4: 30 mm (3) Separation distance between test film formation amount adjusting plate 20T and substrate 17: 12 mm The film forming conditions by sputtering are as follows.

(1) Sputtering method: two-pole RF conventional sputtering (2) Opposing distance between target 16 and substrate 17: 90
mm (3) Material of target 16: Co (4) Size of target 16: diameter 3 inch (76.2 mm) (5) Sputter gas pressure: 10 mtorr (6) Ar gas flow rate: 50 sccm (7) RF power: 300 W (8) Heating temperature of substrate 17: none (room temperature) In the experiment, first, film formation was performed by ordinary sputtering without using test film formation amount adjusting plate 20T, and the film thickness distribution was measured. In the measurement of the film thickness portion, calculation was performed assuming that the film thickness of the thin film 17F formed at the center of the substrate 17 was 100%. The substrate 17 used was 3 inches. FIG. 5 is a diagram showing the relationship between the film formation position on the surface of the substrate 17 and the film thickness distribution. As shown in FIG. 5, as the distance from the center of the substrate 17 toward the edge increases, the thickness of the formed thin film 17F decreases.

Next, as shown in FIG.
A test film formation amount adjusting plate 20T was disposed between the substrate and the substrate 17, and film formation was performed by sputtering. FIG. 6 is a diagram showing the relationship between the opening size (diameter) of the opening 20H provided on the test film formation amount adjusting plate 20T and the film formation rate. As shown in FIG. 6, as the size of the opening 20H increases, the deposition rate increases, and the thickness of the thin film 17F increases. The thickness of the thin film 17F increases approximately quadratically. Furthermore, if the thickness of the test film formation amount adjusting plate 20T is large, the film formation rate becomes slow, and the test film formation amount adjustment plate 20T
When the thickness of T is small, the film forming rate is increased.

FIG. 7 is a plan view of the test film formation amount adjusting plate 20T, and FIG. 8 is a diagram showing the relationship between the film formation position on the surface of the substrate 17 and the film thickness distribution. 4mm diameter opening 20H1, 6mm diameter
The test film formation amount adjusting plate 20T having the opening 20H2 of 8 mm, the opening 20H3 of 8 mm in diameter, and the opening 20H4 of 10 mm in diameter arranged from the center to the end is prepared. When film formation is performed using the film amount adjusting plate 20T, as shown in FIG.
The thickness of the thin film 17F formed in the center of the surface of the thin film 17F decreases, and gradually increases toward the end.

That is, the phenomenon in which the thickness of the thin film 17F continuously formed from the center to the end of the substrate 17 shown in FIG. 5 becomes thinner, and the film thickness adjustment plate for test shown in FIG. When the opening size of the 20T opening 20H is increased, the film formation rate is increased (conversely, when the opening size is reduced, the film formation rate is decreased), and when the test film formation amount adjusting plate 20T shown in FIG. By appropriately adjusting the phenomenon that the film thickness of the formed thin film 17F decreases when the opening size of the opening 20H is reduced toward the center, the film thickness of the thin film 17F formed on the entire surface of the substrate 17 can be adjusted. Can be made substantially constant. FIG. 9 is a plan view of the film formation amount adjusting plate 20 according to the present embodiment, and FIG. 10 is a diagram showing the relationship between the film formation position on the surface of the substrate 17 and the film thickness distribution. As shown in FIG. 9, two openings 20H1 having a diameter of 7 mm and an opening 2 having a diameter of 7.2 mm
0H2, opening 20H3 with a diameter of 7.6 mm, opening 20 with a diameter of 8 mm
By using a film formation amount adjusting plate 20 in which each of the H4s is arranged at a distance of 0.1 mm from the center to the end, and performing film formation by sputtering, as shown in FIG.
A thin film 17 having a substantially uniform thickness can be formed on the entire surface of the surface of the thin film 7.

In the sputtering apparatus configured as described above, the amount of film formed on the surface of the substrate 17 (the thin film
7F) can be made substantially uniform over the entire surface of the substrate 17. In addition, the use of a large-sized target for obtaining a uniform film formation amount on the surface of the substrate 17, an increase in the facing distance between the target 16 and the substrate 17, and the rotation mechanism of the substrate 17 are eliminated, and the sputtering apparatus is downsized. Can,
The structure of the sputtering device is simplified. Further, both the downsizing of the sputtering apparatus and the simplification of the structure can reduce the running cost of the manufacturing process.

Further, even at the same position on the surface of the substrate 17, the larger the opening size of the opening H provided in the film formation amount adjusting plate 20, the larger the amount of film-forming particles having an oblique component in the incident angle can be increased. Is smaller, the amount of film-forming particles having an oblique component at the incident angle is reduced. This characteristic and the substrate 17
By combining with the characteristic that the film deposition amount continuously decreases from the center to the edge of the surface of the substrate 17, the substrate film 17 is adjusted so that the film deposition amount continuously decreases from the edge to the center of the surface of the substrate 17. The thin film 17F can be formed with a uniform thickness over the entire surface of the surface of the substrate 17. Further, since the film formation amount adjusting plate 20 has a substantially uniform film thickness and is constituted by a simple structure in which a plurality of openings 20H whose opening sizes gradually change are provided, the sputtering apparatus can be downsized. In addition, the structure of the sputtering apparatus is simplified.

(Second Embodiment) FIG. 11 is a schematic configuration diagram of a sputtering apparatus according to a second embodiment of the present invention. The sputtering apparatus shown in FIG. 11 employs a two-electrode sputtering method as in the above-described embodiment. This sputtering apparatus is provided between the target 16 and the substrate 17, that is, between the first electrode 14 and the second electrode 15. A film formation amount adjusting plate 21 is provided. FIG. 12 is a side view of the film formation amount adjusting plate 21. The film formation amount adjusting plate 21 is formed in a circular shape in plan view (see FIG. 15), and is formed in a triangular pyramid shape in which the plate thickness is continuously reduced from the center to the end. The surface (upper surface in FIGS. 1 and 2) of the film formation amount adjusting plate 21 is set substantially parallel to the surface of the target 16. A plurality of openings 21H having the same opening size are regularly arranged in the film formation amount adjusting plate 21. In the present embodiment, the opening 21
H penetrates in the thickness direction to form a round opening.

The film formation amount adjusting plate 21 adjusts the amount of film forming particles penetrating in the plate thickness direction by the opening 21H, and continuously reduces the plate thickness from the center to the end, thereby reducing the thickness of the substrate 1.
7 has a function of continuously decreasing the thickness of the thin film from the surface end toward the center of the surface (thinning the thickness of the thin film to be formed), so that the deposition amount is uniform over the entire surface of the substrate 17. Adjust.

An experiment was conducted to verify the uniformity of the film formation amount by the film formation amount adjustment plate 21. When the film formation amount adjusting plate 21 is used for film formation by sputtering, even if the openings 21H have the same opening size, the thickness of the thin film 17F formed on the surface of the substrate 17 depends on the thickness of the film formation amount adjustment plate 21. The film thickness is different. That is, as the thickness of the film formation amount adjusting plate 21 increases, the film formation particles having an oblique component at the incident angle are blocked and the amount of the film formation particles passing through the opening 21H decreases. Becomes thinner. Film formation amount adjustment plate 2
In order to specifically know the relationship between the plate thickness of No. 1 and the decrease in the amount of film-forming particles passing therethrough, test film-forming amount adjusting plates of different plate thicknesses (not shown) in which openings 21H having the same opening size are formed. Was used to measure the change in the film formation rate when the thickness of the test film formation amount adjusting plate was changed. The dimensions of the test film formation amount adjusting plate are as follows. The film forming conditions by sputtering are the same as those in the above-described embodiment.

(1) Thickness of test film formation amount adjusting plate: 4 m
m, 8 mm, 12 mm (3 types) (2) Distance from the center of the test film formation amount adjustment plate to the center of the opening 21H: 30 mm (3) Separation distance between the test film formation amount adjustment plate and the substrate 17 : 12 mm (4) Opening size (diameter) of the opening 21H of the test film formation amount adjusting plate: 8 mm, 10 mm (two types) FIG. 13 shows the relationship between the thickness of the test film formation amount adjusting plate and the film formation rate. FIG. As shown in FIG. 13, in the test film formation amount adjusting plate in which the openings 21H having the same opening size are provided, as the thickness of the test film formation amount adjusting plate increases, the function becomes approximately quadratic. The deposition rate becomes slow. The tendency that the film formation rate becomes slower as the thickness of the test film formation amount adjusting plate increases is almost the same regardless of the opening size of the opening 21H. Therefore, similarly to the above-described embodiment, the phenomenon in which the thickness of the thin film 17F continuously formed from the central portion to the end of the substrate 17 shown in FIG. By properly adjusting the phenomenon that the film formation rate is slowed down by increasing the thickness of the film deposition amount adjusting plate for use (the phenomenon that the film formation rate is slowed by decreasing the plate thickness),
The thickness of the thin film 17F formed on the entire surface of the substrate 17 can be made substantially constant. That is, the film formation amount adjusting plate 21 has the same opening size of the opening 21H, has a plate thickness that continuously increases from the end to the center, and is formed in a triangular pyramid shape, so that the surface of the substrate 17 is formed. The thickness of the thin film 17F formed on the entire surface can be made substantially constant.

FIG. 14 is a side view of the film formation amount adjusting plate 21 according to the present embodiment, FIG. 15 is a plan view of the film formation amount adjusting plate 21, and FIG. 16 is a film formation position and film thickness on the surface of the substrate 17. It is a figure showing the relation with distribution. As shown in FIGS. 14 and 15, the openings 21H1 to 21H5, each having a diameter of 8 mm, are formed by 0.1 mm.
By using a film-forming amount adjusting plate 21 having a thickness of 4 mm at the end and a thickness of 4.5 mm at the center, the film is formed by sputtering, as shown in FIG. The thin film 17 having a substantially uniform thickness can be formed on the entire surface of the surface of the substrate 17.

In the sputtering apparatus configured as described above, even at the same position on the surface of the substrate 17, the thickness of the film formation amount adjustment plate 21, that is, the opening provided in the film formation amount adjustment plate 21 (the opening size is the same) As the opening depth of 21H is smaller, the amount of film-forming particles having an oblique component at the incident angle can be increased,
As the opening depth increases, the amount of film-forming particles having oblique components at the incident angle decreases. This characteristic is combined with the characteristic that the film formation amount continuously decreases from the center to the edge of the surface of the substrate 17, and the adjustment is performed such that the film formation amount continuously decreases from the edge of the surface of the substrate 17 toward the center. By performing the above, the substrate 1
The thin film 17F can be formed with a uniform thickness over the entire surface of the surface 7. Further, since the film formation amount adjusting plate 21 has a plurality of openings 21H having a substantially uniform opening size and is constituted by a simple structure in which the plate thickness changes gradually, the sputtering apparatus can be downsized. Is simplified.

The present invention is not limited to the above embodiment. For example, the present invention can be applied to a sputtering apparatus that employs a magnetron sputtering method and a facing target type sputtering method.

[0043]

According to the present invention, it is possible to provide a sputtering apparatus capable of making the thickness of a thin film formed on a substrate surface uniform and realizing miniaturization of the apparatus.

Further, the present invention can provide a sputtering apparatus which can make the thin film formed on the substrate surface uniform, and which can realize the downsizing of the apparatus by simplifying the structure of the apparatus.

Further, the present invention can provide a sputtering apparatus capable of reducing the running cost of the manufacturing process.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram of a sputtering apparatus according to a first embodiment of the present invention.

FIG. 2 is a plan view of a film formation amount adjusting plate provided in a sputtering apparatus.

FIG. 3 is a schematic configuration diagram of a sputtering apparatus for explaining an experiment.

FIG. 4 is a plan view of a test film formation amount adjusting plate used in an experiment.

FIG. 5 is a diagram showing a relationship between a film formation position on a substrate surface and a film thickness distribution.

FIG. 6 is a diagram showing a relationship between an opening size of a test film formation amount adjusting plate and a film formation rate.

FIG. 7 is a plan view of a test film formation amount adjusting plate.

FIG. 8 is a diagram showing a relationship between a film formation position on a substrate surface and a film thickness distribution.

FIG. 9 is a plan view of a film formation amount adjusting plate according to the present embodiment.

FIG. 10 is a diagram showing a relationship between a film formation position on a surface of a substrate and a film thickness distribution.

FIG. 11 is a schematic configuration diagram of a sputtering apparatus according to a second embodiment of the present invention.

FIG. 12 is a side view of a film formation amount adjusting plate.

FIG. 13 is a view showing the relationship between the thickness of a test film formation amount adjusting plate and the film formation rate.

FIG. 14 is a side view of a film formation amount adjusting plate according to the present embodiment.

FIG. 15 is a plan view of a film formation amount adjusting plate.

FIG. 16 is a diagram showing a relationship between a film formation position on a substrate surface and a film thickness distribution.

FIG. 17 is a schematic configuration diagram of a sputtering apparatus employing a two-electrode sputtering method according to the related art.

FIG. 18 is a schematic configuration diagram of a sputtering apparatus employing a magnetron sputtering method according to a conventional technique.

FIG. 19 is a schematic configuration diagram of a sputtering apparatus employing a facing target type sputtering method according to the related art.

FIG. 20 is a schematic configuration diagram of a sputtering apparatus employing a collimation sputtering method according to the related art.

FIG. 21 is a plan view of a collimator plate according to the related art.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Vacuum container 14 1st electrode 15 2nd electrode 16 Target 17 Substrate 17F Thin film 18 Power supply 20, 21 Film formation amount adjustment plate 20H, 21H opening 20T Test film formation amount adjustment plate

Claims (2)

[Claims] 1. A substrate disposed between a target and a substrate in a vacuum container, the amount of film-forming particles that is blown from the target toward the substrate surface is adjusted, and the substrate is moved from a position corresponding to the substrate end. A sputtering apparatus, comprising: a film formation amount adjusting plate provided with a plurality of openings whose opening size continuously decreases toward a position corresponding to the center. 2. The film forming amount adjusting plate has a thickness that continuously increases from a position corresponding to the substrate edge to a position corresponding to the substrate center. 3. The sputtering apparatus according to 1.