CN112159965A - Large-size planar substrate coating method and device based on linear magnetron sputtering target gun - Google Patents
Large-size planar substrate coating method and device based on linear magnetron sputtering target gun Download PDFInfo
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- CN112159965A CN112159965A CN202010913247.8A CN202010913247A CN112159965A CN 112159965 A CN112159965 A CN 112159965A CN 202010913247 A CN202010913247 A CN 202010913247A CN 112159965 A CN112159965 A CN 112159965A
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- 239000000758 substrate Substances 0.000 title claims abstract description 70
- 238000000576 coating method Methods 0.000 title claims abstract description 41
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 35
- 238000005192 partition Methods 0.000 claims abstract description 77
- 239000011248 coating agent Substances 0.000 claims abstract description 37
- 239000010408 film Substances 0.000 claims abstract description 33
- 238000000151 deposition Methods 0.000 claims abstract description 17
- 230000008021 deposition Effects 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 16
- 238000004088 simulation Methods 0.000 claims abstract description 10
- 239000007888 film coating Substances 0.000 claims abstract description 8
- 238000009501 film coating Methods 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims abstract description 4
- 238000000926 separation method Methods 0.000 claims description 17
- 239000002245 particle Substances 0.000 description 24
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000002310 reflectometry Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000005469 synchrotron radiation Effects 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 238000012356 Product development Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a large-size plane substrate coating method and a device based on a linear magnetron sputtering target gun, wherein the method comprises the following steps: mounting the large-size plane substrate at the center of a sample holder; a plurality of groups of partition plates in pairs are arranged in the horizontal direction vertical to the plane of the sample holder, and the partition plates are positioned above the plane of the substrate; obtaining the deposition thickness distribution of the thin film under each component partition plate; obtaining the middle line spacing of two groups of adjacent partition plates under the requirement of set thickness based on the film deposition thickness distribution simulation; after the middle line spacing of each component partition board is adjusted, a linear magnetron sputtering target gun is adopted to realize the film coating of the large-size plane substrate. Compared with the prior art, the invention can improve the thickness uniformity of the coating on the large-size plane substrate while ensuring the coating quality of the linear magnetron sputtering target gun.
Description
Technical Field
The invention belongs to the field of optical films, and particularly relates to a method and a device for coating a large-size planar substrate based on a linear magnetron sputtering target gun.
Background
The synchrotron radiation light has high brightness, high collimation and good coherence, can emit continuous spectrum ranging from far infrared to hard X-ray, has important application in the fields of life science, environmental science, condensed state physics, material science and the like, and becomes an irreplaceable light source for basic scientific research, application research and high-technology product development in the world today. Multilayer film mirrors play an important role in the field of synchrotron radiation as an important X-ray optical element. In the X-ray band, in order to increase the reflectivity of the mirror, the multilayer film structure needs to be designed so that the reflected light of the X-ray at each interface is coherently superimposed. The reflectivity of the multilayer film mirror depends on the film thickness, the wavelength of the X-rays, and the angle of incidence. In the hard X-ray band (λ e (0.01 nm-0.1 nm)), in order to increase the reflectivity of the mirror, the grazing incidence angle is usually much less than 1 °, and a very small beam also forms a very long spot on the mirror, thus requiring a mirror with a large size (usually in the range of 100 mm-450 mm), for example a flat mirror mounted in a european X-ray free electron laser line station with a length of up to 800 mm.
The large-size plane reflector can be obtained by plating the multilayer film on the large-size plane substrate, and the magnetron sputtering system is important equipment for plating the film on the large-size plane substrate. The linear magnetron sputtering target gun can be well matched with a large-size plane substrate, and better meets the coating requirement. However, because the substrate and the target gun have larger sizes, more particles are inevitably deposited on the substrate in a way of high-angle oblique incidence, and the film forming way of the film is greatly influenced. The obliquely incident particles need to fly a longer path to be deposited on the substrate, so that the probability of collision between the particles and gas particles is increased, the kinetic energy of the particles deposited on the substrate is reduced, and the compactness of the film is reduced. Meanwhile, the obliquely incident particles enable the film to grow in an irregular inclined columnar form, the kinetic energy component perpendicular to the substrate is reduced when the particles are incident on the substrate, the heat obtained after the particles are impacted is less and is difficult to combine with adjacent nuclei to generate a shadow effect, the roughness of the film is increased, and the compactness is reduced. In addition, due to the inherent sputtering particle distribution rule of the linear magnetron sputtering target gun, the area with uniform thickness and deposition is extremely small. In the X-ray band, in order to ensure that the multilayer film reflecting mirror has high reflection efficiency, the thickness uniformity of the multilayer film needs to be accurately controlled, and the roughness of the multilayer film needs to be reduced. In the past research work, aiming at a linear magnetron sputtering target gun, people limit the incident angle of sputtering particles to a substrate by adding a mask plate and a single group of partition plates, so as to improve the coating quality of a multilayer film, but the method can cause the problems of limited size of a prepared sample, further poor coating thickness uniformity and the like.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a method and a device for coating a large-size planar substrate based on a linear magnetron sputtering target gun, which can effectively improve the coating thickness uniformity while improving the coating quality.
The purpose of the invention can be realized by the following technical scheme:
a large-size plane substrate coating method based on a linear magnetron sputtering target gun comprises the following steps:
mounting the large-size plane substrate at the center of a sample holder;
a plurality of groups of partition plates in pairs are arranged in the horizontal direction vertical to the plane of the sample holder, and the partition plates are positioned above the plane of the substrate;
obtaining the deposition thickness distribution of the thin film under each component partition plate;
obtaining the middle line spacing of two groups of adjacent partition plates under the requirement of set thickness based on the film deposition thickness distribution simulation;
after the middle line spacing of each component partition board is adjusted, a linear magnetron sputtering target gun is adopted to realize the film coating of the large-size plane substrate.
Further, the length of the large-size planar substrate is less than 450mm, and the width of the large-size planar substrate is less than 200mm, so as to meet the requirement of a uniform sputtering area of the target.
Further, the height of the lower edge of the separation plate from the plane of the substrate is 20 mm-30 mm in consideration of the target distance and the size of the separation plate.
Further, considering the size of the sample rack and the target distance, the length of the separation plate is less than 250mm, and the width of the separation plate is 20 mm-30 mm.
Further, the length of the partition plate is more than 240mm and less than 250mm, and the width of the partition plate is 20 mm-30 mm.
Furthermore, in the same group of partition plates, the distance d between the two partition plates is 30-40 mm, so that the deposition incident angle of most particles is ensured to be less than 51 degrees, and the film forming quality is improved.
Furthermore, the distance between the middle lines of the two groups of partition plates is 45-55 mm, so that the thin film deposition thickness distribution under the two adjacent groups of partition plates can be superposed to form an area with good uniformity.
Furthermore, a baffle plate with the same length as the separation plates and the width of-d is arranged between every two adjacent groups of separation plates, so that particles which are not corrected by the separation plates are prevented from being deposited on the surface of a sample, wherein the distance between the middle lines of the two groups of separation plates is the distance between the two separation plates in the same group of separation plates, and d is the distance between the two separation plates in the same group of separation plates.
The invention also provides a large-size plane substrate coating device based on the linear magnetron sputtering target gun, which comprises the linear magnetron sputtering target gun, a sample rack and a plurality of groups of partition plates in pairs, wherein the plane of the sample rack is parallel to the plane of the linear magnetron sputtering target gun, and the partition plates are arranged in the horizontal direction vertical to the plane of the sample rack;
when coating is carried out, the large-size plane substrate is arranged at the center of the sample holder, the partition plates are positioned above the plane of the substrate, and the distance between the middle lines of the two adjacent groups of partition plates is obtained based on the film deposition thickness distribution simulation.
Furthermore, the height from the lower edge of the partition plate to the plane of the substrate is 20-30 mm.
Furthermore, a baffle plate with the same length as the partition plates and the width of-d is arranged between every two adjacent groups of partition plates, the distance between the middle lines of the two groups of partition plates is the distance between the two partition plates in the same group of partition plates, and d is the distance between the two partition plates in the same group of partition plates.
Compared with the prior art, the invention has the following beneficial effects:
1. according to the invention, a plurality of groups of partition plates with specific sizes and intervals are additionally arranged above the plane of the substrate, so that the deposition distribution condition of sputtering particles is reasonably controlled while the incidence angle of the particles deposited on the surface of the substrate is limited, the film coating quality of the linear magnetron sputtering target gun is improved, the film coating thickness uniformity on the large-size plane substrate is improved, and the requirement of film coating on the large-size plane substrate is met.
2. The invention designs the distance between the partition plates in the same group to be 30-40 mm, can limit particles deposited and incident at large angles, and ensures that the deposition incident angle of most particles is less than 51 degrees, thereby ensuring good coating quality.
3. According to the invention, the simulation and calculation are carried out according to the deposition thickness distribution result of the particles passing through the single group of partition plates, so that the distance between the intermediate lines of the two groups of partition plates is adjusted, and the particles can be ensured to pass through the thin film deposition thickness distribution of the two adjacent groups of partition plates to overlap out an area with good film thickness uniformity.
4. The baffle plates are arranged between the adjacent groups of partition plates, so that other particles can be prevented from being deposited on the substrate, and the coating quality is further improved.
5. The invention is effectively suitable for the film formation of the large-size planar substrate film with the length of less than 450mm and the width of less than 200mm, and the uniformity of the thickness of the plated film in the area of 250mm is better than 5 percent while the quality of the plated film is ensured.
Drawings
FIG. 1 is a schematic front view of a divider panel mounting of the present invention;
FIG. 2 is a schematic side view of the divider plate mounting of the present invention;
FIG. 3 is a schematic view of a separator plate according to the present invention;
FIG. 4 is a thickness simulation distribution of a W single-layer film in a vertical direction when a single group of partition plates and a plurality of groups of partition plates are installed;
reference numbers in the figures: 1. the device comprises a single group of partition plates, 2, the distance d between the partition plates in the same group, 3, the distance between the middle lines of the two groups of partition plates, 4, a linear magnetron sputtering target gun, 5, a single partition plate, 6, the width of the partition plate, 7, the height of the lower edge of the partition plate from the plane of a substrate, 8, a large-size plane substrate, 9, a sample rack, 10, a baffle, 11 and the length of the partition plate.
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments. The present embodiment is implemented on the premise of the technical solution of the present invention, and a detailed implementation manner and a specific operation process are given, but the scope of the present invention is not limited to the following embodiments.
Example 1
The target gun is a linear magnetron sputtering target gun, and the sputtering surface size of the target gun is 38mm multiplied by 508 mm. The unique shape and large size of the gun causes a portion of the particles to be incident at a large angle, resulting in poor coating quality and poor thickness uniformity of the coating on large-sized planar substrates. The invention provides a method for coating a large-size planar substrate based on a linear magnetron sputtering target gun, which aims to solve the technical problem. In the embodiment, the sample holder is 600mm long and 250mm wide; the target distance was set to 100 mm.
Because the sputtering uniform area of the target is limited, the length of the large-size plane substrate applicable to the method is 100 mm-450 mm, and the width is within 200 mm. In this example, a rectangular planar silicon substrate of 200mm × 20mm was selected as a sample, and the partition plate had a length of 240mm and a width of 20 mm.
The method for coating the sample comprises the following steps:
mounting the large-size plane substrate at the center of the sample holder, and enabling the large-size plane substrate to be parallel to the plane of the target gun;
the method comprises the following steps that a plurality of groups of partition plates in pairs are arranged in the horizontal direction perpendicular to the plane of a sample holder, the partition plates are located above the plane of a substrate, specifically, the height from the lower edge of each partition plate to the plane of the substrate is 20mm, and in the same group of partition plates, the distance d between the two partition plates is 40mm, so that the incident angle of particles can be limited, and the coating quality can be guaranteed;
obtaining the deposition thickness distribution of the thin film of the particles under each component partition plate;
the distance between the middle lines of the two adjacent groups of partition plates under the requirement of the set thickness is obtained based on the film deposition thickness distribution simulation, the distance between the middle lines obtained by the simulation calculation of the embodiment is 50mm, and the particles can be respectively distributed on the large-size plane substrate through the film deposition thicknesses of the two groups of partition plates to form a region with good thickness uniformity;
after the middle line spacing of each component partition board is adjusted, a linear magnetron sputtering target gun is adopted to realize the film coating of the large-size plane substrate.
In another embodiment, a baffle is arranged between the adjacent groups of separating plates to shield other incident particles, so that the thickness uniformity of the coating film can be greatly improved while the coating quality is ensured.
At a target distance of 100mm, the background vacuum is 3 multiplied by 10-4And Pa, the charging amount of sputtering Ar gas is 3mTorr, and the W single-layer film is prepared under the coating parameter condition of W target power of 400W, and the coating thickness uniformity is greatly improved. The area with the thickness error within 5% is regarded as the uniform coating area, the length of the uniform coating area of the current coating is increased from 40mm to 150mm, and the thickness uniformity is improved while the coating quality is improved.
Example 2
The large-size plane substrate coating device based on the linear magnetron sputtering target gun comprises the linear magnetron sputtering target gun, a sample rack and a plurality of groups of partition plates in a group, wherein the plane where the sample rack is located is parallel to the plane where the linear magnetron sputtering target gun is located, and the partition plates are arranged in the horizontal direction vertical to the plane where the sample rack is located; when the film is coated, the large-size plane substrate is arranged at the center of the sample holder, the partition plates are positioned above the plane of the substrate, and the distance between the middle lines of two adjacent groups of partition plates is obtained based on the film deposition thickness distribution simulation. The rest is the same as example 1.
The foregoing detailed description of the preferred embodiments of the invention has been presented. It should be understood that numerous modifications and variations could be devised by those skilled in the art in light of the present teachings without departing from the inventive concepts. Therefore, the technical solutions available to those skilled in the art through logic analysis, reasoning and limited experiments based on the prior art according to the concept of the present invention should be within the scope of protection defined by the claims.
Claims (10)
1. A large-size plane substrate film coating method based on a linear magnetron sputtering target gun is characterized by comprising the following steps:
mounting the large-size plane substrate at the center of a sample holder;
a plurality of groups of partition plates in pairs are arranged in the horizontal direction vertical to the plane of the sample holder, and the partition plates are positioned above the plane of the substrate;
obtaining the deposition thickness distribution of the thin film under each component partition plate;
obtaining the middle line spacing of two groups of adjacent partition plates under the requirement of set thickness based on the film deposition thickness distribution simulation;
after the middle line spacing of each component partition board is adjusted, a linear magnetron sputtering target gun is adopted to realize the film coating of the large-size plane substrate.
2. The method for coating a large-size planar substrate based on a linear magnetron sputtering target gun according to claim 1, wherein the length of the large-size planar substrate is less than 450mm, and the width of the large-size planar substrate is less than 200 mm.
3. The method for coating the large-size planar substrate based on the linear magnetron sputtering target gun according to claim 1, wherein the height of the lower edge of the separation plate from the plane of the substrate is 20-30 mm.
4. The method for coating a large-size planar substrate based on a linear magnetron sputtering target gun according to claim 1, wherein the length of the separation plate is less than 250mm, and the width is 20mm to 30 mm.
5. The method for coating a large-size planar substrate based on a linear magnetron sputtering target gun according to claim 1, wherein the distance d between two separation plates in the same group of separation plates is 30mm to 40 mm.
6. The method for coating a large-size planar substrate based on the linear magnetron sputtering target gun according to claim 1, wherein the distance between the middle lines of the two groups of separation plates is 45mm to 55 mm.
7. The method for coating a large-size planar substrate based on the linear magnetron sputtering target gun as claimed in claim 1, wherein a baffle plate with the same length as the partition plates and the width of-d is arranged between two adjacent groups of partition plates, the distance between the middle lines of the two groups of partition plates is d, and the distance between the two partition plates in the same group of partition plates is d.
8. A large-size plane substrate coating device based on a linear magnetron sputtering target gun is characterized by comprising the linear magnetron sputtering target gun, a sample rack and a plurality of groups of partition plates in a pairwise manner, wherein the plane of the sample rack is parallel to the plane of the linear magnetron sputtering target gun, and the partition plates are arranged in the horizontal direction vertical to the plane of the sample rack;
when coating is carried out, the large-size plane substrate is arranged at the center of the sample holder, the partition plates are positioned above the plane of the substrate, and the distance between the middle lines of the two adjacent groups of partition plates is obtained based on the film deposition thickness distribution simulation.
9. The apparatus for coating a large-sized planar substrate according to claim 8, wherein the height of the lower edge of the partition plate from the plane of the substrate is 20-30 mm.
10. The apparatus for coating a large-sized planar substrate according to claim 8, wherein a baffle plate having a width of-d and the same length as the partition plates is disposed between two adjacent groups of partition plates, wherein d is the distance between the two partition plates in the same group of partition plates.
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| CN202010913247.8A CN112159965B (en) | 2020-09-03 | 2020-09-03 | Large-size planar substrate coating method and device based on linear magnetron sputtering target gun |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116334536A (en) * | 2023-03-29 | 2023-06-27 | 东北大学 | High-toughness transition metal nitride TiAl (Ni) N X Hard coating and preparation method thereof |
| CN118581436A (en) * | 2024-08-06 | 2024-09-03 | 长沙韶光芯材科技有限公司 | Intelligent adjustment method for coating position of glass substrate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11200029A (en) * | 1998-01-13 | 1999-07-27 | Victor Co Of Japan Ltd | Sputtering device |
| CN106987817A (en) * | 2017-04-17 | 2017-07-28 | 同济大学 | A kind of method for improving line style magnetic controlled sputtering target rifle in spill cylinder base coated film quality |
-
2020
- 2020-09-03 CN CN202010913247.8A patent/CN112159965B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11200029A (en) * | 1998-01-13 | 1999-07-27 | Victor Co Of Japan Ltd | Sputtering device |
| CN106987817A (en) * | 2017-04-17 | 2017-07-28 | 同济大学 | A kind of method for improving line style magnetic controlled sputtering target rifle in spill cylinder base coated film quality |
Non-Patent Citations (2)
| Title |
|---|
| RUNZE QI, ET AL.: "Effects of sputtering parameters and separator plates on the stress of W/Si multilayers in x-ray telescope applications", 《OPTICAL ENGINEERING》 * |
| 齐润泽 等: "eXTP望远镜用W/Si多层膜", 《光学 精密工程》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116334536A (en) * | 2023-03-29 | 2023-06-27 | 东北大学 | High-toughness transition metal nitride TiAl (Ni) N X Hard coating and preparation method thereof |
| CN118581436A (en) * | 2024-08-06 | 2024-09-03 | 长沙韶光芯材科技有限公司 | Intelligent adjustment method for coating position of glass substrate |
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Effective date of registration: 20240103 Address after: 313100 Unit B, Building 2, National University Science Park, No. 669 High speed Railway, the Taihu Lake Street, Changxing County, Huzhou City, Zhejiang Province Patentee after: Zhejiang Tongyue Optical Technology Co.,Ltd. Address before: 200092 Siping Road 1239, Shanghai, Yangpu District Patentee before: TONGJI University |