TWI741750B - Wafer processing deposition shielding components - Google Patents

Abstract

Embodiments described herein generally relate to an apparatus and method for uniform sputter depositing of materials into the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a collimator for mechanical and electrical coupling with a shield member positioned between a sputtering target and a substrate support pedestal is provided. The collimator comprises a central region and a peripheral region, wherein the collimator has a plurality of apertures extending therethrough and where the apertures located in the central region have a higher aspect ratio than the apertures located in the peripheral region.

Description

Wafer handling deposited shielding parts

The embodiments of the present invention generally relate to an apparatus and method for uniformly sputtering and depositing materials onto the bottom and sidewalls of features with high aspect ratios on a substrate.

In the manufacture of integrated circuits, sputtering or physical vapor deposition (PVD) is a technique widely used to deposit thin metal layers on substrates. PVD is used to deposit layers that serve as diffusion barrier layers, seed layers, primary conductors, anti-reflective coatings, and etch stop layers. However, it is difficult to form a uniform thin film that retains the shape of the substrate by PVD, in which a step such as the formation of a via or a trench occurs in the substrate. In particular, the wide-angle distribution of deposited sputtered atoms results in poor coverage in the bottom and sidewalls (such as vias and trenches) of features with high aspect ratios.

The collimator sputtering technology was developed to allow the use of PVD to deposit thin films in the bottom of features with high aspect ratios. The collimator is a filter plate positioned between a sputtering source and a substrate. The collimator usually has a uniform thickness and includes channels formed through the thickness. The sputtering material must pass through the collimator in its path from the sputtering source to the substrate. The collimator filters out materials that will hit the work piece at an acute angle exceeding the desired angle.

The actual amount of filtering by a given collimator depends on the aspect ratio of the channel passing through the collimator. Therefore, particles traveling along a path close to perpendicular to the substrate pass through the collimator and are deposited on the substrate. This can improve the coverage in the feature structure with high aspect ratio at the bottom.

However, the conventional collimator combined with a small magnet magnetron will have some problems. The use of a small magnet magnetron will generate a high ionized metal flux, which is conducive to filling features with high aspect ratios. Unfortunately, PVDs with conventional collimators incorporating small magnet magnetrons provide uneven deposition across the substrate. The source material may deposit a thicker layer in one area of the substrate than in other areas on the substrate. For example, depending on the radial positioning of the small magnets, a thicker layer may be deposited in the center or edge of the substrate. This phenomenon not only causes non-uniform deposition across the substrate, but also causes non-uniform deposition across the sidewalls of features with high aspect ratios in some areas of the substrate. For example, small magnets positioned radially to provide the best magnetic field uniformity in the area near the periphery of the substrate, resulting in the source material being deposited on the sidewall of the feature facing the center of the substrate than it is deposited on the surface The feature structure on the periphery of the substrate is larger on the sidewall.

Therefore, there is a need to improve the uniformity of source materials deposited across substrates by PVD technology.

A deposition apparatus according to an embodiment described herein includes: an electrically grounded chamber; a sputtering target supported by the chamber and electrically insulated from the chamber; and a substrate support seat positioned in the chamber The bottom of the sputtering target has a substrate supporting surface substantially parallel to the sputtering surface of the sputtering target; a shielding member supported by the chamber and electrically coupled to the chamber; and a collimator The device is mechanically and electrically coupled to the shielding member and positioned between the sputtering target and the substrate support seat. In one embodiment, the collimator has a plurality of orifices extending therethrough. In one embodiment, the apertures located in the central area have a higher aspect ratio than the apertures located in the peripheral area.

In another embodiment, a deposition apparatus includes: an electrically grounded chamber; a sputtering target supported by the chamber and electrically insulated from the chamber; and a substrate support seat positioned in the sputtering target The bottom of the shooting target has a substrate supporting surface substantially parallel to the sputtering surface of the sputtering target; a shielding member supported by the chamber and electrically coupled to the chamber; a collimator, It is mechanically and electrically coupled to the shielding member and positioned between the sputtering target and the substrate support base; a gas source; and a controller. In one embodiment, the sputtering target is electrically coupled to a DC power source. In one embodiment, the substrate support base is electrically coupled to the RF power source. In one embodiment, the controller is programmed to provide signals to control the gas source, DC power source, and RF power source. In one embodiment, the collimator has a plurality of apertures extending therethrough. In one embodiment, the aperture in the central area has a higher aspect ratio than the aperture in the peripheral area of the collimator. In one embodiment, the controller is programmed to provide a high bias to the substrate support base.

In yet another embodiment, a method for depositing a material on a substrate includes the following steps: in a chamber with a collimator located between the sputtering target and the substrate support, a sputtering target Applying a DC bias to the material; providing a process gas in a region adjacent to the sputtering target in the chamber; applying a bias to the substrate support; and applying a pulse to the substrate between a high bias and a low bias The bias of the support base. In one embodiment, the collimator has a plurality of apertures extending therethrough. In one embodiment, the aperture in the central area has a higher aspect ratio than the aperture in the peripheral area of the collimator.

In yet another embodiment, there is provided a collimator positioned between a sputtering target and a substrate support for mechanically and electrically coupling a shielding member. The collimator includes a central area and a peripheral area, wherein the collimator has a plurality of apertures extending therethrough, and the apertures located in the central area have a higher aspect ratio than the apertures located in the peripheral area.

In yet another embodiment, a lower shield for surrounding a substrate support seat facing a target in a process chamber is provided. The lower shield includes: a cylindrical outer belt having a first diameter adjusted to surround the sputtering surface of the sputtering target and the substrate support seat, and the outer cylindrical belt includes a first diameter surrounding the sputtering target. The upper part of the sputtering surface; a middle part; and a lower part, which surrounds the substrate support seat; a support flange, which has a support surface and extends radially outward from the cylindrical outer band; a base plate from The lower part of the cylindrical outer belt extends radially inward; and a cylindrical inner belt is coupled to the base plate and partially surrounds the flange of the substrate support seat.

In yet another embodiment, an upper shield for surrounding a sputtering target facing a support base in a substrate processing chamber is provided. The upper shield includes a shielding part and an integrated flux optimizer for directional sputtering.

The embodiments described herein provide an apparatus and method for uniformly depositing sputtered material across the high aspect ratio features of the substrate during the manufacture of integrated circuits on the substrate.

FIG. 1 depicts an exemplary embodiment of a process chamber 100 having an embodiment of a process kit 140 that can process a substrate 154. The process kit 140 includes a single-piece lower shield 180, a single-piece upper shield 186, and a collimator 110. In the illustrated embodiment, the process chamber 100 includes a sputtering chamber capable of depositing titanium, aluminum oxide, aluminum, copper, tantalum, tantalum nitride, tungsten, or tungsten nitride on a substrate. It is called a physical vapor deposition (PVD) chamber. Examples of suitable PVD chambers include ALPS® Plus and SIP ENCORE® PVD process chambers, both available from Santa Clara Applied Materials, Inc., California. It should be understood that process chambers from other manufacturers can also be used to implement the embodiments described herein.

The chamber 100 includes a sputtering source, such as a target 142 having a sputtering surface 145, and a substrate support 152 having a peripheral edge 153, and the substrate support 152 is used to receive a semiconductor substrate 154 thereon . The substrate support seat can be located in a grounded chamber wall 150.

In one embodiment, the chamber 100 includes a target 142 supported by a grounded conductive adapter 144 via a dielectric isolator 146. The target 142 contains the material to be deposited on the surface of the substrate 154 during sputtering and includes copper deposited as a kind of crystal layer in the high aspect ratio features formed in the substrate 154. In one embodiment, the target 142 may also include a bonding composition of a metal surface layer of a sputterable material (such as copper), and a back layer of a structural material (such as aluminum).

In one embodiment, the base 152 supports a substrate 154 to be sputter-coated, wherein the substrate 154 has a characteristic structure with a high aspect ratio, and the bottom of the substrate 154 is flat relative to the main surface of the target 142. The substrate support 152 has a flat substrate receiving surface that is generally arranged parallel to the sputtering surface of the target 142. The seat 152 can move vertically through a bellows 158, which is connected to the bottom chamber wall 160 to allow the substrate to be blocked via a load lock valve (not shown) in the lower part of the chamber 100 Transport to the seat 152. The seat 152 can then be raised to the deposition position as shown.

In one embodiment, the process gas may be supplied into the lower part of the chamber 100 from the gas source 162 via the mass flow controller 164. In one embodiment, a controllable direct current (DC) power source 148 coupled to the chamber 100 may be used to apply a negative voltage or a bias voltage to the target 142. A radio frequency (RF) power source 156 can be coupled to the base 152 to induce a DC self-bias voltage on the substrate 154. In one embodiment, the seat 152 is grounded. In one embodiment, the seat 152 is electrically floating.

In one embodiment, the magnetron 170 is positioned above the target 142. The magnetron 170 may include a plurality of magnets 172 supported by a base plate 174 connected to a shaft 176 that can be axially aligned with the central axis of the chamber 100 and the substrate 154. In one embodiment, the magnets are arranged in a kidney-shaped pattern. The magnet 172 generates a magnetic field near the front surface of the target 142 in the chamber 100 to generate plasma, so that a large amount of ion current hits the target 142, causing the target material to be sputtered. The magnet 172 can rotate around the axis 176 to increase the uniformity of the magnetic field across the surface of the target 142. In one embodiment, the magnetron 170 is a small magnet magnetron. In one embodiment, the magnets 172 can both rotate and move in a linear direction substantially parallel to the target surface to generate a spiral motion. In one embodiment, the magnet 172 can rotate around the central axis and the independently controlled second axis to control its radial position and angular position.

In one embodiment, the chamber 100 includes a lower ground shield 180 having a support flange 182 supported by the side wall 150 of the chamber and coupled to the side wall 150 of the chamber. The upper shield 186 is supported by the flange 184 of the adapter 144 and is coupled to the flange 184 of the adapter 144. The upper shield 186 and the lower shield 180 are coupled in an electrical coupling manner as the adapter 144 and the chamber wall 150. In one embodiment, both the upper shield 186 and the lower shield 180 comprise stainless steel. In one embodiment, the chamber 100 includes a middle shield (not shown) coupled to the upper shield 186. In one embodiment, the upper shield 186 and the lower shield 180 are electrically floating in the chamber 100. In one embodiment, the upper shield 186 and the lower shield 180 may be coupled to an electric power source.

In one embodiment, the upper shield 186 has an upper portion that closely fits the annular side groove of the target 142 with a narrow gap 188 (between the upper shield 186 and the target 142), and the narrow gap 188 It is narrow enough to prevent the plasma from penetrating and sputter coating the dielectric isolator 146. The upper shield 186 may also include a top portion 190 protruding downward, and the top portion 190 covers the interface between the lower shield 180 and the upper shield 186, thereby preventing the shields from being connected by sputtering deposited materials.

In one embodiment, the lower shield 180 extends downward to the cylindrical outer band 196, which generally extends along the cavity wall 150 to below the top surface of the seat 152. The lower shield 180 may have a base plate 198 extending radially inward from the cylindrical outer band 196. The base plate 198 may include a cylindrical inner belt 103 extending upwardly around the periphery of the seat 152. In one embodiment, when the seat 152 is in the lower loading position, the cover ring 102 is supported on the top of the cylindrical inner belt 103; when the seat is in the upper deposition position, the cover ring 102 is supported on the outer periphery of the seat 152 to The protective seat 152 is not subject to sputter deposition.

The lower shield 180 surrounds the target 142 facing the sputtering surface 145 of the support base 152 and surrounds the peripheral wall of the support base 152. The lower shield 160 covers and shields the chamber wall 150 of the chamber 100 to reduce the deposition of sputter deposits from the sputtering surface 145 of the sputtering target 142 to the components and surfaces on the back of the lower shield 180. For example, the lower shield 180 can protect the surface of the support base 152, multiple parts of the substrate 154, the chamber wall 150, and the bottom wall 160 of the chamber 100.

In one embodiment, directional sputtering can be achieved by positioning the collimator 110 between the target 142 and the substrate support 152. The collimator 110 may be mechanically or electrically coupled to the upper shield 186. In an embodiment, the collimator 110 may be coupled to a middle shield (not shown) positioned at a lower part of the chamber 100. In one embodiment, the collimator 110 is integrated to the upper shield 186, as shown in FIG. 8. In one embodiment, the collimator 110 is welded to the upper shield 186. In an embodiment, the collimator 110 may be electrically floating in the chamber 100. In an embodiment, the collimator 110 may be coupled to an electric power source. The collimator 110 includes a plurality of orifices (omitted in Figure 1) for guiding the flow of gas and/or material in the chamber.

Figure 2 is a top plan view of an embodiment of the collimator 110. The collimator 110 is usually a honeycomb structure in a close-packed configuration, and the honeycomb structure has a hexagonal wall 126 for separating the hexagonal aperture 128. The aspect ratio of the hexagonal orifice 128 may be defined as the depth of the orifice 128 (equal to the thickness of the collimator) divided by the width 129 of the orifice 128. In one embodiment, the thickness of the wall 126 ranges from about 0.06 inches to about 0.18 inches. In one embodiment, the thickness of the wall 126 ranges from about 0.12 inches to about 0.15 inches. In one embodiment, the collimator includes a material selected from aluminum, copper, and stainless steel.

FIG. 3 is a schematic cross-sectional view of the collimator 310 according to an embodiment described herein. The collimator 310 includes a central area 320 having a high aspect ratio, for example, from about 1.5:1 to about 3:1. In one embodiment, the aspect ratio of the central area 320 is about 2.5:1. The aspect ratio of the collimator 310 decreases from the central area 320 to the outer peripheral area 340 in the radial direction. In one embodiment, the aspect ratio of the collimator 310 is from the central area 320 to the peripheral area 340, and the aspect ratio is reduced from about 2.5:1 to about 1:1. In another embodiment, the aspect ratio of the collimator 310 is from the central area 320 to the peripheral area 340, and the aspect ratio is reduced from about 3:1 to about 1:1. In one embodiment, the aspect ratio of the collimator 310 is from the central area 320 to the peripheral area 340, and the aspect ratio is reduced from about 1.5:1 to about 1:1.

In one embodiment, the radial hole of the collimator 310 is reduced by changing the thickness of the collimator 310. In one embodiment, the central area 320 of the collimator 310 has an increased thickness, for example, between about 3 inches and about 6 inches. In one embodiment, the thickness of the central area 320 of the collimator 310 is about 5 inches. In one embodiment, the thickness of the collimator 310 is from the central area 320 to the peripheral area 340, and the thickness decreases radially from about 5 inches to about 2 inches. In one embodiment, the thickness of the collimator 310 is from the central area 320 to the peripheral area 340, and the thickness decreases radially from about 6 inches to about 2 inches. In one embodiment, the thickness of the collimator 310 is radially reduced from about 2.5 inches to about 2 inches from the central region 320.

Although the aspect ratio variation of the embodiment of the collimator 310 shown in Figure 3 shows a radially reduced thickness, the width of the aperture of the collimator 310 can be increased from the central area 320 to the peripheral area 340 To reduce the aspect ratio. In another embodiment, the thickness of the collimator 310 decreases from the central area 320 to the peripheral area 340 and the width of the collimator 310 increases from the central area 320 to the peripheral area 340.

Generally speaking, the embodiment in FIG. 3 shows the aspect ratio of the inverted conical shape obtained by radially decreasing in a linear manner. Other embodiments of the invention may include a non-linearly reduced aspect ratio.

Figure 4 is a schematic cross-sectional view of a collimator 410 according to an embodiment of the present invention. The collimator 410 has a thickness that decreases from the central area 420 to the peripheral area 440 in a non-linear manner to obtain a convex shape.

Figure 5 is a schematic cross-sectional view of a collimator 510 according to an embodiment of the present invention. The collimator 510 has a thickness that decreases from the central region 520 to the peripheral region 540 in a non-linear manner to obtain a concave shape.

In some embodiments, the central area 320, 420, 520 is nearly zero, so that the central area 320, 420, 520 appears as a point at the bottom of the collimator 310, 410, 510.

Referring back to FIG. 1, regardless of the actual shape of the radially reduced aspect ratio of the collimator 110, the operation of the PVD process chamber 100 is similar to the function of the collimator 110. The system controller 101 is arranged on the outside of the chamber 100 and generally facilitates the control and automation of the overall system. The system controller 101 may include a central processing unit (CPU) (not shown), memory (not shown), and support circuits (not shown). The CPU can be any computer processor used in industrial equipment to control various system functions and chamber manufacturing processes.

In one embodiment, the system controller 101 provides a signal to position the substrate 154 on the substrate support 152 and generate plasma in the chamber 100. The system controller 101 sends a signal to apply a voltage through the DC power source 148 to bias the target 142 and excite the process gas (for example, argon) into plasma. The system controller 101 can further provide a signal to cause the RF power source 156 to DC self-bias the seat 152. The DC self-bias helps to attract the positively charged ions generated in the plasma deep into the high aspect ratio mesopores and grooves on the surface of the substrate.

The collimator 110 functions as a filter to trap ions and neutral particles emitted from the target 142 at an angle exceeding a selected angle (almost perpendicular to the substrate 154). The collimator 110 may be one of the collimators 310, 410, and 510 shown in FIGS. 3, 4, and 5, respectively. The collimator 110 having the characteristic of reducing the aspect ratio radially from the center allows a larger percentage of ions emitted from the peripheral area of the target 142 to pass through the collimator 110. Therefore, the number of ions deposited on the peripheral area of the substrate 154 and the angle at which the ions reach can be increased at the same time. Therefore, according to the embodiment of the present invention, the material can be sputtered and deposited more uniformly across the surface of the substrate 154. In addition, material can be deposited more uniformly on the bottom and sidewalls of the feature structure with high aspect ratio, especially the vias and grooves with high aspect ratio located near the periphery of the substrate 154.

In addition, in order to provide greater coverage of sputter-deposited materials on the bottom and sidewalls of features with high aspect ratios, sputter-etched materials that are sputter-deposited on the field and bottom regions of the features can be sputter-etched. In one embodiment, the system controller 101 applies a high bias voltage to the seat 152 so that the target 142 ion etches the film deposited on the substrate 154. Therefore, the field deposition rate deposited on the substrate 154 is reduced, and the sputtered material is re-deposited to the sidewall or bottom of the feature with high aspect ratio. In one embodiment, the system controller 101 applies a high bias voltage and a low bias voltage to the seat 152 in a pulsed or alternating manner, so that the process becomes a pulsed deposition/etch process. In one embodiment, particularly the collimator 110 unit located under the magnet 172 directs a large amount of deposition material toward the substrate 154. Therefore, at any given time, material can be deposited on one area of the substrate 154, and at the same time material that has been deposited on another area of the substrate 154 can be etched.

In one embodiment, in order to provide greater coverage of sputtered deposition materials on the sidewalls of features with high aspect ratios, a secondary plasma such as argon plasma (which is generated in the chamber close to the substrate) can be used. 154) to sputter etching the material deposited on the bottom of the feature. In one embodiment, the chamber 100 includes an RF coil 141 attached to the lower shield 180 by a plurality of coil spacers 143 that electrically insulate the coil 141 from the lower shield 180. The system controller 101 sends a signal to apply RF power through the shield 180 to the coil 141 through a feedthrough standoff (not shown). In one embodiment, the RF coil inductively couples RF energy to the interior of the chamber 100 to ionize the precursor gas (eg, argon) to maintain the secondary plasma close to the substrate 154. The secondary plasma sputters a deposition layer from the bottom of the high aspect ratio feature structure and re-deposits material on the sidewall of the feature structure.

Still referring to FIG. 1, the collimator 110 can be attached to the upper shield 186 by a plurality of radial brackets 111.

Figure 6 is an enlarged cross-sectional view of the bracket 611 for attaching the collimator 110 to the upper shield 186 according to an embodiment of the present invention. The bracket 611 includes an internally threaded tube 613 that is welded to the collimator 110 and extends radially outward from the collimator 110. The fastening member 615 (such as a bolt) can be inserted into the hole of the upper shield 186 and screwed into the tube 613 to attach the collimator 110 to the upper shield 186, while making it possible to deposit on the threads of the tube 613 or the fastening member 615 Part of the material is minimized.

FIG. 7 is an enlarged cross-sectional view of the bracket 711 for attaching the collimator 110 to the upper shield 186 according to another embodiment of the present invention. The bracket 711 includes a stud 713 which is welded to the collimator 110 and extends radially outward from the collimator 110. The internally threaded fastening member 715 can be inserted and passed through the aperture in the upper shield 186 and screwed onto the stud 713 to attach the collimator 110 to the upper shield 186 while making it possible to deposit on the stud 713 or tight. The material of the threaded portion of the fixing member 715 is minimized.

FIG. 8 is a schematic cross-sectional view of a semiconductor process system 800 having another embodiment of the process kit 840 described herein. Similar to the process kit 140, the process kit 840 includes a single-piece lower shield 180. However, unlike the process kit 140 that includes the separate collimator 110 coupled to the upper shield 186 through a radial bracket 111, the process kit 840 includes a single upper shield 886 that includes a shield portion 892 and integrated The flux optimizer part 810. The single-cell structure of the upper shield 886 allows the cooling efficiency to be maximized. The integrated flux optimizer part 810 includes a plurality of orifices (omitted in Figure 8) for guiding the gas and/or material flux in the chamber as described above.

Figure 9A is a partial cross-sectional view of a single upper shield 886 according to embodiments described herein. FIG. 9B is a top plan view of the single upper shield 886 in FIG. 9A according to the embodiment described herein. The size of the upper shield 886 on the monomer is adjusted to surround the sputtering surface 145 of the sputtering target 142 facing the support base 152. The upper shield 886 shields the adapter 144 of the chamber 100 to reduce sputter deposits from the sputtering surface 145 of the sputtering target 142.

As shown in Figures 8, 9A, and 9B, the upper shield 886 on a single body is a single structure and includes a shield portion 892 and an integrated flux optimizer portion 810. For example, the shielding portion 892 and the integrated flux optimizer portion 810 can be made of a single mass material. The shielding part 892 includes a cylindrical band 902. The cylindrical belt 902 includes a top wall 904 and a bottom wall 906. The supporting flange 908 extends radially outward from the top wall 904 of the cylindrical belt 902. The supporting flange 908 includes a supporting surface 910 for supporting the adapter 144 of the chamber 800. In one embodiment, the supporting surface 910 and the bottom wall 906 intersect to form a 90 degree angle. In one embodiment, the support flange 908 has a plurality of slits that are shaped to receive the pins that align the upper shield 892 to the adapter 144. In one embodiment, the supporting flange 908 has one or more notches 940 positioned periodically around the cylindrical band 902.

As shown in FIG. 9A, the top wall 904 further includes a top surface 925, an inner periphery 926, and an outer periphery 928. The outer periphery of the top wall 904 and the supporting flange 908 intersect to form a stepped portion 932.

In one embodiment, as shown in Figure 8, the bottom wall 906 of the cylindrical belt 902 has an outer diameter (illustrated by arrow "A"), and is sized to fit and support in the adapter 144 The stepped portion 1032 of the shield 180 (shown in Figure 10B). In one embodiment, the outer diameter "A" of the bottom wall 906 is between about 18 inches (45.7 cm) and about 18.5 inches (47 cm). In another embodiment, the outer diameter "A" of the bottom wall 906 is between about 18.1 inches (46 cm) and about 18.2 inches (46.2 cm). In one embodiment, the cylindrical band 902 has an inner diameter illustrated by arrow "B". In one embodiment, the inner diameter "B" of the cylindrical belt 902 is between about 17.2 inches (43.7 cm) and about 17.9 inches (45.5 cm). In another embodiment, the inner diameter "B" of the cylindrical belt 902 is between about 17.5 inches (44.5 cm) and about 17.7 inches (45 cm). In one embodiment, the top wall 904 has an outer diameter illustrated by arrow "C". In one embodiment, the top wall 904 and the bottom wall 906 have the same inner diameter "B".

In one embodiment, the outer diameter "C" of the top wall 904 is between about 18 inches (45.7 cm) and about 18.5 inches (47 cm). In another embodiment, the outer diameter "C" of the top wall 904 is between about 18.3 inches (46.5 cm) and about 18.4 inches (46.7 cm). In one embodiment, the outer diameter “C” of the top wall 904 is greater than the outer diameter “A” of the bottom wall 906.

The integrated flux optimizer part 810 can be designed similarly to one of the collimators 310, 410, or 510 shown in FIGS. 3, 4, and 5, respectively. As shown in FIG. 9B, the integrated flux optimizer portion 810 is generally a honeycomb structure in a close-packed configuration, and the honeycomb structure has a hexagonal wall 942 for separating the hexagonal orifice 944. As shown in FIG. The aspect ratio of the hexagonal orifice 944 can be defined as the depth of the orifice 944 (equal to the thickness of the integrated flux optimizer portion 810) divided by the width 946 of the orifice. In one embodiment, the hexagonal wall 942 adjacent to the shielding portion 892 has a chamfer 950 and a radius.

In one embodiment, the monolithic upper shield 886 can be mechanically formed from a single piece of aluminum. The upper shield 886 on the monomer can be selectively coated or anodized. Alternatively, the monolithic shield 886 may be made of other materials compatible with the process environment, and may also include one or more sections. Alternatively, the shielding portion 892 of the upper shield and the integrated flux optimizer portion 810 may be formed in separate pieces and coupled together using an appropriate attachment method (such as welding).

Figures 10A and 10B are partial cross-sectional views of the shield under the embodiment described herein. Fig. 10C is a top view of an embodiment of the shield under Fig. 10A. As shown in FIGS. 1 and 10A-10C, the lower shield 180 has a single structure and includes a cylindrical outer belt 196, a base plate 198, and an inner cylindrical belt 103. The cylindrical outer belt 196 has a diameter adjusted to surround the sputtering surface 145 of the sputtering target 142 and the peripheral edge 153 of the seat 152. The cylindrical outer belt 196 includes an upper portion 1012, a middle portion 1014, and a lower portion 1016. The upper portion 1012 is sized to surround the sputtering surface 145 of the sputtering target 142. The supporting flange 182 extends radially outward from the upper portion 1012 of the cylindrical outer belt 196. The supporting flange 182 includes a supporting surface 1024 for supporting the cavity wall 150 of the cavity 100. The support surface 1024 may have a plurality of slits that are shaped to receive pins that align the lower shield 180 to the chamber wall 150 or any adapter positioned between the chamber wall 150 and the lower shield 180 . In one embodiment, the supporting surface 1024 has a surface roughness of about 10 to about 80 microinches, even about 16 to about 63 microinches, or in one embodiment, a surface roughness of about 32 microinches.

As shown in FIG. 10B, the upper portion 1012 includes a top surface 1025, an inner periphery 1026, and an outer periphery 1028. The outer periphery 1028 extends upward to above the top surface 1025 to form an annular lip 1030. The annular lip 1030 forms a stepped portion 1032 having a top surface 1025. In one embodiment, the annular lip 1030 is positioned perpendicular to the top surface 1025 to form a stepped portion 1032. The stepped portion 1032 provides a supporting surface to engage the upper shield 186.

In one embodiment, the annular lip 1030 has an outer diameter shown by arrow "D". In one embodiment, the outer diameter "D" of the annular lip 1030 is between about 18.4 inches (46.7 cm) and about 18.7 inches (47.5 cm). In another embodiment, the outer diameter "D" of the annular lip 1030 is between about 18.5 inches (47 cm) and about 18.6 inches (47.2 cm). In one embodiment, the annular lip 1030 has an inner diameter shown by arrow "E". In one embodiment, the inner diameter "E" of the annular lip 1030 is between about 18.2 inches (46.2 cm) and about 18.5 inches (47 cm). In another embodiment, the inner diameter "E" of the annular lip 1030 is between about 18.3 inches (46.5 cm) and about 18.4 inches (46.7 cm).

In one embodiment, the outer diameter of the top surface 1025 is the same as the inner diameter "E" of the annular lip 1030. In one embodiment, the top surface has an inner diameter shown by arrow "F". In one embodiment, the inner diameter "F" of the top surface 1025 is between about 17.2 inches (43.7 cm) and about 18 inches (45.7 cm). In another embodiment, the inner diameter "F" of the top surface 1025 is between about 17.5 inches (44.5 cm) and about 17.6 inches (44.7 cm).

In one embodiment, the inner periphery 1026 of the upper portion 1012 is angled radially outward at an angle a from the vertical. In one embodiment, the angle between the angle a and the vertical direction is about 2° to about 10°. In one embodiment, the angle between the angle a and the vertical is about 4°.

The lower part 1016 is sized to surround the seat 152. The base plate 198 extends radially inward from the lower portion 1016 of the cylindrical outer belt 196. The cylindrical inner band 103 is coupled to the base plate 198 and is sized to surround the seat 152. The cylindrical inner belt 103, the base plate 198, and the cylindrical outer belt 196 form a U-shaped channel. The cylindrical inner band 103 includes a height lower than the height of the cylindrical outer band 196. In one embodiment, the height of the inner cylindrical belt 103 is about one-fifth of the height of the cylindrical outer belt 196. In one embodiment, the middle portion 1014 has a notch 1040. In one embodiment, the cylindrical outer belt 196 has a plurality of gas holes 1042.

In one embodiment, the base plate 198 has an outer diameter shown by arrow "G". In one embodiment, the outer diameter "G" of the base plate 198 is between about 17 inches (43.2 cm) and about 17.4 inches (44.2 cm). In another embodiment, the outer diameter "G" of the base plate 198 is between about 17.1 inches (43.4 cm) and about 17.2 inches (43.7 cm). In one embodiment, the base plate 198 has an inner diameter shown by arrow "I". In one embodiment, the inner diameter "I" of the base plate 198 is between about 13.9 inches (35.3 cm) and about 14.4 inches (36.6 cm). In another embodiment, the inner diameter "I" of the base plate 198 is between about 14 inches (35.6 cm) and about 14.1 inches (35.8 cm).

In one embodiment, the inner cylindrical belt 103 has an outer diameter as shown by the arrow "H". In one embodiment, the outer diameter "H" of the inner cylindrical band is between about 14.0 inches (35.6 cm) and about 14.3 inches (36.3 cm). In another embodiment, the inner cylindrical band 103 has an outer diameter as shown by the arrow "H". In one embodiment, the outer diameter "H" of the inner cylindrical belt 103 is between about 14.2 inches (36.1 cm) and about 14.3 inches (36.3 cm).

In one embodiment, the cylindrical outer belt 196, the base plate 198, and the inner cylindrical belt 103 comprise a single structure. The single-shot shield 180 is superior to conventional shields consisting of multiple components (usually two or three individual pieces are used to assemble the entire lower shield). For example, in the heating and cooling process, a single segment shields more parts with a more uniform heat. For example, the shield under a single segment has only one thermal contact surface with the chamber wall 150, so that the heat exchange between the shield 180 and the chamber wall 150 can be more controlled. The shield 180 with multiple shielding components makes it more difficult and laborious to remove the shield during cleaning. The single-segment shield 180 has a continuous surface exposed to sputter deposition without having interfaces or corners that are difficult to clean. The single-segment shield 180 can also effectively shield the chamber wall 150 from sputtering deposition during the process cycle.

In one embodiment, the upper barrier wall 186, 886 and/or the lower barrier wall 180 may be made of 300 series stainless steel, or in other embodiments, may be made of aluminum. In one embodiment, the exposed surfaces of the upper wall 186, 886 and/or the lower wall 180 are treated with CLEANCOATTW, which can be purchased from Applied Materials of Santa Clara, California. CLEANCOATTW is a twin-wire aluminum arc spray coating applied to the substrate processing chamber components (for example, the upper barrier wall 186, 886 and/or the lower barrier wall 180) to reduce particle shedding and deposition On the shield, so as to prevent the contamination of the substrate in the chamber. In one embodiment, the double-core aluminum arc spraying on the upper barrier wall 186, 886 and/or the lower barrier wall 180 has a surface roughness of from about 600 to about 2300 microinches.

The upper barrier wall 186, 886 and/or the lower barrier wall 180 have exposed surfaces facing the internal space in the chamber 100, 800. In one embodiment, the exposed surface is bead blasted to have a surface roughness of 175±75 microinches. The textured bead spray surface is used to reduce particle shedding and prevent contamination in the chamber 100, 800. The average value of the surface roughness is the average of the absolute value of the displacement along the average line of the roughness feature of the exposed surface from the peak to the valley. The average roughness, skewness, or other properties can be determined by a profiler, which moves the needle on the exposed surface and generates a highly disturbed trajectory of the roughness on the surface, or by scanning electrons that use electron beams reflected from the surface A microscope to produce an image of the surface.

Although the foregoing is directed to the embodiments of the present invention, other and further embodiments can be developed without departing from the basic scope of the present invention and the scope determined by the scope of the following patent applications.

100: chamber 101: system controller 102: Cover ring 103: Inner lip 110: collimator 111: radial bracket 126: Hexagonal wall 128: Orifice 129: width 141: coil 142: Target 143: Coil spacer 144: Adapter 146: Dielectric isolator 148: power source 150: chamber wall 152: Seat 153: Peripheral edge 154: Substrate 156: Power source 158: bellows 160: bottom chamber wall 162: Gas source 164: Mass flow controller 170: Magnetron 172: Magnet 174: Base plate 176: Shaft 180: lower shield 182: upper flange 184: Flange 186: Upper shield 188: Narrow gap 190: Protruding top 196: Tubular section/cylindrical outer belt 198: Bottom section/base plate 310: Collimator 320: Central area 340: Peripheral area 410: Collimator 420: Central area 440: Peripheral area 510: collimator 520: central area 540: Peripheral area 611: Bracket 613: Tube 615: Fastening member 711: bracket 713: snail 715: Fastening member 800: Monolithic collimator/process system 810: Optimizer part 886: Shield on the single body 892: shielding part

In order to make the above-mentioned features of the present invention more obvious and understandable, it can be described with reference to the embodiments, and parts of which are shown in the accompanying drawings. It should be noted that although the attached drawings disclose specific embodiments of the present invention, they are not intended to limit the spirit and scope of the present invention. Anyone familiar with the art can make various modifications and modifications to obtain equivalent embodiments. .

FIG. 1 is a schematic cross-sectional view of a semiconductor process system having an embodiment of the process kit described herein.

Figure 2 is a top plan view of the collimator according to the embodiment described herein.

Figure 3 is a schematic cross-sectional view of the collimator according to the embodiment described herein.

Figure 4 is a schematic cross-sectional view of the collimator according to the embodiment described herein.

Figure 5 is a schematic cross-sectional view of the collimator according to the embodiment described herein.

Figure 6 is an enlarged partial cross-sectional view of the bracket according to the embodiment described herein, which is used to attach the collimator to the shield above the PVD chamber.

Figure 7 is a partial cross-sectional view of the bracket according to the embodiments described herein, which is used to attach the collimator to the shield above the PVD chamber.

FIG. 8 is a schematic cross-sectional view of a semiconductor process system with another process kit described herein.

Figure 9A is a partial cross-sectional view of the upper shield on a single body according to the embodiments described herein.

Figure 9B is a top plan view of the monolithic upper shield of Figure 9A according to the embodiments described herein.

Figure 10A is a cross-sectional view of the lower shield according to one of the embodiments described herein.

Figure 10B is a partial cross-sectional view of an embodiment of the shield under Figure 10A.

Fig. 10C is a top view of an embodiment of the shield under Fig. 10A.

Domestic deposit information (please note in the order of deposit institution, date and number) without Foreign hosting information (please note in the order of hosting country, institution, date, and number) without

101: System Controller

102: Cover Ring

103: inner lip

142: Target

143: Coil spacer

144: Adapter

146: Dielectric isolator

148: Power Source

150: chamber wall

152: Seats

153: Peripheral edge

154: Substrate

156: Power Source

158: Bellows

160: bottom chamber wall

162: Gas source

164: Mass Flow Controller

170: Magnetron

172: Magnet

174: base plate

176: Shaft

180: lower shield

182: Upper flange

184: Flange

188: Narrow gap

190: Highlight the top

196: Tubular section/cylindrical outer belt

198: bottom section/base

800: Monolithic collimator/process system

810: Optimizer section

886: Monolithic upper shield

892: shielding part

Claims (18)

A collimator for a PVD chamber, comprising: a honeycomb structure having a plurality of straight walls, the straight walls define and separate a plurality of individual orifices, each of the orifices has An aspect ratio defined by a depth and a width, wherein the individual orifices include: a first hexagonal orifice having a first aspect ratio in a central area, wherein the first aspect ratio From 1.5:1 to 3:1; a plurality of second non-hexagonal orifices, in a peripheral area, having a second aspect ratio smaller than the first aspect ratio; and a plurality of third hexagonal orifices In a transition area set from the peripheral area to the central area, an aspect ratio of the plurality of third hexagonal holes decreases along the transition area to the peripheral area. The collimator according to claim 1, wherein the honeycomb structure defines an inverted conical shape extending from an outer edge of the central area to an inner edge of the peripheral area along the transition area. The collimator according to claim 1, comprising a material selected from aluminum, copper and stainless steel. The collimator according to claim 1, wherein a thickness of the walls is between 0.06 inches and 0.18 inches. The collimator according to claim 4, wherein a thickness of the walls is between 0.12 inches and 0.15 inches. The collimator according to claim 1, wherein the non-hexagonal apertures are located at an outer periphery of the honeycomb structure. The collimator according to claim 6, wherein at least six of the non-hexagonal orifices have the same maximum width dimension. The collimator according to claim 7, wherein the at least six non-hexagonal orifices of the non-hexagonal orifices are symmetrically distributed around the outer periphery of the honeycomb structure. An upper shield for a PVD chamber, comprising: the collimator as described in claim 1; and a shielding part. The upper shield according to claim 9, wherein the collimator is coupled to the shielding portion through a bracket, the bracket includes: an externally threaded member; and an internally threaded member, the internally threaded member is engaged with the externally threaded member . The upper shield as described in claim 9, wherein the collimator is welded to the shield part. The upper shield as described in claim 9, wherein the shielding part and the collimator are machined and formed from a single piece of aluminum. The upper shield according to claim 9, wherein the shield portion includes a support flange extending outwardly from a cylindrical belt. The upper shield according to claim 13, wherein the support flange includes one or more notches positioned periodically around the cylindrical band. A deposition equipment includes: a chamber electrically grounded; a sputtering target supported by the chamber and electrically isolated from the chamber and electrically coupled to a DC power source; a substrate support seat positioned in the sputtering target There is a substrate supporting surface parallel to a sputtering surface of the sputtering target under the sputtering target, wherein the substrate supporting seat is electrically coupled to an RF power source; a collimator is positioned on the sputtering target. Between the shooting target and the substrate support seat, the collimator has a honeycomb structure with a plurality of straight walls that define and separate a plurality of individual orifices. Each has an aspect ratio defined by a depth and a width, where the individual orifices include: A first hexagonal orifice, in a central area, has a first aspect ratio, wherein the first aspect ratio is from 1.5:1 to 3:1; a plurality of second non-hexagonal orifices, in A peripheral area has a second aspect ratio smaller than the first aspect ratio; and a plurality of third hexagonal apertures, in a transition area set from the peripheral area to the central area, wherein the plurality of An aspect ratio of the third hexagonal hole decreases along the transition area to the peripheral area; a gas source; and a controller, programmed to provide a plurality of signals to control the gas source and the DC power source And the RF power source, wherein the controller is programmed to provide a bias voltage to the substrate support base. The apparatus of claim 15, further comprising an RF coil, wherein the controller is programmed to provide a plurality of signals to control the RF power source so that the bias voltage of the substrate support is alternated, and wherein the controller It is programmed to control the power supplied to the RF coil and the gas source to control the secondary plasma in the chamber. A method of depositing material on a substrate, comprising the steps of: applying a DC bias to a sputtering target in a chamber with a collimator, the collimator being positioned on the sputtering target And a substrate support seat, wherein the collimator has a honeycomb structure, the honeycomb structure has a plurality of straight walls, the straight walls define and separate a plurality of individual orifices, the orifices Each has an aspect ratio defined by a depth and a width, wherein the individual orifices include: a first hexagonal orifice, in a central area, having a first aspect ratio, wherein the first An aspect ratio is from 1.5:1 to 3:1; a plurality of second non-hexagonal apertures have a second aspect ratio smaller than the first aspect ratio in a peripheral area; and a plurality of third Hexagonal orifice, in a transition area set from the peripheral area to the central area, wherein an aspect ratio of the third hexagonal holes decreases along the transition area to the peripheral area; in the Provide a process gas in an area adjacent to the sputtering target in the chamber; apply a bias to the substrate support; and apply to the substrate support between a plurality of biases with different amplitudes This bias voltage generates pulses. The method according to claim 17, further comprising the step of: applying power to an RF coil located inside the chamber to provide secondary plasma inside the chamber, wherein the plurality of third hexagonal orifices The aspect ratio continuously decreases from the central area to the peripheral area.

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