TW202000961A - Wafer processing deposition shielding components - Google Patents

Abstract

Embodiments described herein generally relate to an apparatus and method for uniform sputter depositing of materials into the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a collimator for mechanical and electrical coupling with a shield member positioned between a sputtering target and a substrate support pedestal is provided. The collimator comprises a central region and a peripheral region, wherein the collimator has a plurality of apertures extending therethrough and where the apertures located in the central region have a higher aspect ratio than the apertures located in the peripheral region.

Description

Wafer processing deposition shielding parts

Embodiments of the present invention generally relate to an apparatus and method for uniformly sputter-depositing materials onto a base and sidewalls of a feature structure having a high aspect ratio on a substrate.

In the manufacture of integrated circuits, sputtering or physical vapor deposition (PVD) is a technique widely used to deposit thin metal layers on substrates. PVD is used to deposit layers as diffusion barrier layers, seed layers, primary conductors, anti-reflective coatings, and etch stop layers. However, it is difficult to form a uniform thin film that retains the shape of a substrate by PVD, in which steps such as the formation of a via hole or trench occur in the substrate. In particular, the wide-angle distribution of deposited sputtered atoms leads to poor coverage in the bottom and sidewalls (such as vias and trenches) of features with high aspect ratios.

The collimator sputtering technology was developed to allow PVD to be used to deposit thin films in the bottom of features with high aspect ratios. The collimator is a filter plate positioned between a sputtering source and a substrate. The collimator usually has a uniform thickness and includes channels formed through the thickness. The sputtered material must pass from the sputtering source through the collimator on its path to the substrate. The collimator filters out material that will strike the work piece at an acute angle that exceeds the desired angle.

The actual amount of filtering by a given collimator depends on the aspect ratio of the passage through the collimator. Therefore, particles traveling along a path nearly perpendicular to the substrate pass through the collimator and are deposited on the substrate. This can improve coverage in features with high aspect ratios at the bottom.

However, the conventional collimator combined with the use of a small magnet magnetron will have some problems. Using a small magnet magnetron will produce a high ionized metal flux, which is beneficial for filling features with a high aspect ratio. Unfortunately, PVD with a conventional collimator incorporating a small magnet magnetron provides uneven deposition across the substrate. The source material may deposit a thicker layer in one area of the substrate than other areas on the substrate. For example, depending on the radial positioning of the small magnet, a thicker layer may be deposited at the center or edge of the substrate. This phenomenon not only results in non-uniform deposition across the substrate, but also in some areas of the substrate across the sidewalls of feature structures with high aspect ratios. For example, a small magnet positioned radially to provide the best magnetic field uniformity in the area near the periphery of the substrate, resulting in the source material being deposited on the side walls of the feature structure facing the center of the substrate more than the amount deposited on the surface The side walls of the feature structure on the periphery of the substrate are larger.

Therefore, there is a need to improve the uniformity of deposition of source materials across substrates by PVD technology.

A deposition apparatus according to an embodiment described herein includes: an electrically grounded chamber; a sputtering target supported by the chamber and electrically insulated from the chamber; and a substrate support seat positioned at the Under the sputtering target and having a substrate support surface substantially parallel to the sputtering surface of the sputtering target; a shielding member supported by the chamber and electrically coupled to the chamber; and a collimator It is mechanically and electrically coupled to the shielding member and is positioned between the sputtering target and the substrate support. In one embodiment, the collimator has a plurality of apertures extending therethrough. In one embodiment, the orifice in the central area has a higher aspect ratio than the orifice in the peripheral area.

In another embodiment, a deposition apparatus includes: an electrically grounded chamber; a sputtering target supported by the chamber and electrically insulated from the chamber; and a substrate support seat positioned at the splash Under the shooting target and having a substrate support surface substantially parallel to the sputtering surface of the sputtering target; a shielding member supported by the chamber and electrically coupled to the chamber; a collimator, It is mechanically and electrically coupled to the shielding member and positioned between the sputtering target and the substrate support base; a gas source; and a controller. In one embodiment, the sputtering target is electrically coupled to a DC power source. In one embodiment, the substrate support base is electrically coupled to the RF power source. In one embodiment, the controller is programmed to provide signals to control the gas source, DC power source, and RF power source. In one embodiment, the collimator has a plurality of apertures extending therethrough. In one embodiment, the aperture in the central area has a higher aspect ratio than the aperture in the peripheral area of the collimator. In one embodiment, the controller is programmed to provide high bias to the substrate support.

In yet another embodiment, a method for depositing material onto a substrate includes the steps of: aligning a sputtering target in a chamber with a collimator between the sputtering target and the substrate support Applying a DC bias to the substrate; providing a process gas in an area adjacent to the sputtering target in the chamber; applying a bias to the substrate support base; and applying a pulse to the substrate between high and low bias The bias of the support base. In one embodiment, the collimator has a plurality of apertures extending therethrough. In one embodiment, the aperture in the central area has a higher aspect ratio than the aperture in the peripheral area of the collimator.

In yet another embodiment, a collimator positioned between a sputtering target and a substrate support for mechanically and electrically coupling a shield member is provided. The collimator includes a central area and a peripheral area, wherein the collimator has a plurality of apertures extending therethrough, and wherein the aperture in the central area has a higher aspect ratio than the aperture in the peripheral area.

In yet another embodiment, a lower shield is provided for surrounding a substrate support seat facing a target in a process chamber. The lower shield includes a cylindrical outer band having a first diameter adjusted to surround the sputtering surface of the sputtering target and the substrate support, the outer cylindrical band includes a ring surrounding the sputtering target The upper part of the sputtering surface; a middle part; and the lower part, which surrounds the substrate support base; a support flange, which has a support surface and extends radially outward from the cylindrical outer band; a base plate, from The lower portion of the cylindrical outer band extends radially inward; and a cylindrical inner band that is coupled to the base plate and partially surrounds the flange of the substrate support seat.

In yet another embodiment, an upper shield for surrounding a sputtering target facing a support base in a substrate processing chamber is provided. The upper shield includes a shield portion and an integrated flux optimizer for directional sputtering.

The embodiments described herein provide an apparatus and method for uniformly depositing sputtered material across high-aspect-ratio features of a substrate during fabrication of an integrated circuit on the substrate.

FIG. 1 depicts an exemplary embodiment of a process chamber 100 having an embodiment of a process kit 140 that can process a substrate 154. The process kit 140 includes a one-piece lower shield 180, a one-piece upper shield 186, and a collimator 110. In the illustrated embodiment, the process chamber 100 includes a sputtering chamber that can deposit titanium, aluminum oxide, aluminum, copper, tantalum, tantalum nitride, tungsten, or tungsten nitride on the substrate. This is called a physical vapor deposition (PVD) chamber. Examples of suitable PVD chambers include ALPS® Plus and SIP ENCORE® PVD process chambers, both available from Santa Clara Applied Materials, California. It should be appreciated that process chambers from other manufacturers may also be utilized to implement the embodiments described herein.

The chamber 100 includes a sputtering source, such as a target 142 having a sputtering surface 145, and a substrate support 152 having a peripheral edge 153. The substrate support 152 is used to receive the semiconductor substrate 154 thereon . The substrate support base can be located in a grounded chamber wall 150.

In one embodiment, the chamber 100 includes a target 142 supported by a grounded conductive adapter 144 via a dielectric isolator 146. The target 142 contains the material to be deposited onto the surface of the substrate 154 during sputtering and includes copper deposited as a crystal layer in the high aspect ratio features formed in the substrate 154. In one embodiment, the target 142 may also include a bonding composition of a metal surface layer of a sputterable material (such as copper), and a back layer (such as aluminum) of a structural material.

In an embodiment, the base 152 supports a substrate 154 to be sputter coated, wherein the substrate 154 has a high aspect ratio feature structure, and its bottom is planar with respect to the main surface of the target 142. The substrate support 152 has a planar substrate receiving surface that is generally parallel to the sputtering surface of the target 142. The seat 152 can move vertically through a bellow 158, where the bellows 158 is connected to the bottom chamber wall 160 to allow the substrate to be passed through a load lock valve (not shown) in the lower portion of the chamber 100 Transfer to the seat 152. The seat 152 can then be raised to the deposition position as shown.

In one embodiment, process gas may be supplied from the gas source 162 through the mass flow controller 164 into the lower portion of the chamber 100. In an embodiment, a controllable direct current (DC) power source 148 coupled to the chamber 100 may be used to apply a negative voltage or bias to the target 142. A radio frequency (RF) power source 156 may be coupled to the base 152 to induce a DC self-bias voltage on the substrate 154. In one embodiment, the base 152 is grounded. In one embodiment, the seat 152 is electrically floating.

In one embodiment, the magnetron 170 is positioned above the target 142. The magnetron 170 may include a plurality of magnets 172 supported by a base plate 174 connected to a shaft 176 that can be axially aligned with the central axis of the chamber 100 and the substrate 154. In one embodiment, the magnets are arranged in a kidney-shaped pattern. The magnet 172 generates a magnetic field in the chamber 100 near the front surface of the target 142 to generate plasma, and causes a large amount of ion current to hit the target 142, causing the target material to be sputtered out. The magnet 172 can rotate around the axis 176 to increase the uniformity of the magnetic field across the surface of the target 142. In one embodiment, the magnetron 170 is a small magnet magnetron. In one embodiment, the magnets 172 can rotate and move relative to each other in a linear direction substantially parallel to the target surface to generate a spiral motion. In one embodiment, the magnet 172 can rotate around a central axis and an independently controlled second axis to control its radial position and angular position.

In one embodiment, the chamber 100 includes a grounded lower shield 180 having a support flange 182 supported by the chamber sidewall 150 and coupled to the chamber sidewall 150. The upper shield 186 is supported and coupled to the flange 184 of the adapter 144 by the flange 184 of the adapter 144. The upper shield 186 and the lower shield 180 are coupled as the electrical coupling of the adapter 144 and the chamber wall 150. In one embodiment, both the upper shield 186 and the lower shield 180 include stainless steel. In one embodiment, the chamber 100 includes a middle shield (not shown) coupled to the upper shield 186. In one embodiment, the upper shield 186 and the lower shield 180 are electrically floating in the chamber 100. In one embodiment, the upper shield 186 and the lower shield 180 may be coupled to an electric power source.

In an embodiment, the upper shield 186 has an upper portion that closely fits the annular side groove of the target 142 with a narrow gap 188 (between the upper shield 186 and the target 142), the narrow gap 188 Narrow enough to prevent the plasma from penetrating and sputter coating the dielectric isolator 146. The upper shield 186 may also include a top portion 190 that protrudes downward. The top portion 190 covers the interface between the lower shield 180 and the upper shield 186, thereby preventing the shields from being connected by sputter deposited material.

In one embodiment, the lower shield 180 extends down to the cylindrical outer band 196, which generally extends along the chamber wall 150 below the top surface of the seat 152. The lower shield 180 may have a base plate 198 extending radially inward from the cylindrical outer band 196. The base plate 198 may include a cylindrical inner band 103 extending upward around the periphery of the seat 152. In one embodiment, when the seat 152 is in the lower loading position, the cover ring 102 is supported on the top of the cylindrical inner belt 103; when the seat is in the upper deposition position, the cover ring 102 is supported on the outer periphery of the seat 152 to The protection base 152 is not subject to sputter deposition.

The lower shield 180 surrounds the sputtering surface 145 of the target 142 facing the support base 152 and surrounds the peripheral wall of the support base 152. The lower shield 160 covers and shields the chamber wall 150 of the chamber 100 to reduce the deposition of sputter deposits from the sputtering surface 145 of the sputtering target 142 onto the components and surfaces on the back of the lower shield 180. For example, the lower shield 180 may protect the surface of the support base 152, portions of the substrate 154, the chamber wall 150, and the bottom wall 160 of the chamber 100.

In one embodiment, directional sputtering can be achieved by positioning collimator 110 between target 142 and substrate support 152. The collimator 110 may be mechanically or electrically coupled to the upper shield 186. In an embodiment, the collimator 110 may be coupled to a middle shield (not shown) positioned lower in the chamber 100. In one embodiment, the collimator 110 is integrated into the upper shield 186, as shown in FIG. In one embodiment, the collimator 110 is soldered to the upper shield 186. In an embodiment, the collimator 110 may be electrically floating in the chamber 100. In an embodiment, the collimator 110 may be coupled to an electric power source. The collimator 110 includes a plurality of orifices (omitted in FIG. 1) for guiding the flow of gas and/or material in the chamber.

FIG. 2 is a top plan view of an embodiment of collimator 110. FIG. The collimator 110 is usually a honeycomb structure in a close-packed configuration, and the honeycomb structure has a hexagonal wall 126 for separating the hexagonal aperture 128. The aspect ratio of the hexagonal aperture 128 can be defined as the depth of the aperture 128 (equal to the thickness of the collimator) divided by the width 129 of the aperture 128. In one embodiment, the thickness of the wall 126 is between about 0.06 inches and about 0.18 inches. In one embodiment, the thickness of the wall 126 is between about 0.12 inches and about 0.15 inches. In one embodiment, the collimator includes a material selected from aluminum, copper, and stainless steel.

FIG. 3 is a schematic cross-sectional view of the collimator 310 according to one embodiment described herein. The collimator 310 includes a central region 320 having a high aspect ratio, for example, from about 1.5:1 to about 3:1. In one embodiment, the aspect ratio of the central region 320 is about 2.5:1. The aspect ratio of the collimator 310 decreases from the central region 320 to the outer peripheral region 340 along the radial direction. In one embodiment, the aspect ratio of the collimator 310 is reduced from about 2.5:1 to about 1:1 from the central region 320 to the peripheral region 340. In another embodiment, the aspect ratio of the collimator 310 is reduced from about 3:1 to about 1:1 from the central region 320 to the peripheral region 340. In one embodiment, the aspect ratio of the collimator 310 is reduced from about 1.5:1 to about 1:1 from the central region 320 to the peripheral region 340.

In one embodiment, the radial hole of the collimator 310 is reduced by changing the thickness of the collimator 310. In one embodiment, the central region 320 of the collimator 310 has an increased thickness, such as between about 3 inches and about 6 inches. In one embodiment, the thickness of the central region 320 of the collimator 310 is about 5 inches. In one embodiment, the thickness of the collimator 310 is reduced from about 5 inches to about 2 inches in a radial direction from the central region 320 to the peripheral region 340. In one embodiment, the thickness of the collimator 310 is reduced from about 6 inches to about 2 inches from the central region 320 to the peripheral region 340. In one embodiment, the thickness of the collimator 310 decreases radially from about 2.5 inches to about 2 inches from the central region 320.

Although the aspect ratio change of the embodiment of the collimator 310 shown in FIG. 3 shows a radially reduced thickness, the width of the aperture of the collimator 310 can also be increased from the central region 320 to the peripheral region 340 To reduce the aspect ratio. In another embodiment, the thickness of the collimator 310 decreases from the central region 320 to the peripheral region 340 and the width of the collimator 310 increases from the central region 320 to the peripheral region 340.

Generally speaking, the embodiment in FIG. 3 shows that the aspect ratio of the inverted conical shape is reduced radially in a linear manner. Other embodiments of the invention may include a non-linearly reduced aspect ratio.

FIG. 4 is a schematic cross-sectional view of a collimator 410 according to an embodiment of the present invention. The collimator 410 has a thickness that decreases in a non-linear manner from the central region 420 to the peripheral region 440 to obtain a convex shape.

FIG. 5 is a schematic cross-sectional view of a collimator 510 according to an embodiment of the present invention. The collimator 510 has a thickness that decreases in a non-linear manner from the central region 520 to the peripheral region 540 resulting in a concave shape.

In some embodiments, the central regions 320, 420, 520 are nearly zero, such that the central regions 320, 420, 520 appear as a point at the bottom of the collimators 310, 410, 510.

Referring back to FIG. 1, regardless of the actual shape of the collimator 110 in the radially reduced aspect ratio, the operation of the PVD process chamber 100 is similar to the function of the collimator 110. The system controller 101 is disposed outside the chamber 100 and is generally advantageous for the control and automation of the overall system. The system controller 101 may include a central processing unit (CPU) (not shown), memory (not shown), and support circuits (not shown). The CPU can be any computer processor used to control various system functions and chamber processes in industrial equipment.

In one embodiment, the system controller 101 provides a signal to position the substrate 154 on the substrate support 152 and generate plasma in the chamber 100. The system controller 101 sends a signal to apply a voltage through the DC power source 148 to bias the target 142 and excite the process gas (eg, argon) into a plasma. The system controller 101 may further provide a signal to cause the RF power source 156 to DC self-bias the base 152. The DC self-bias voltage helps to attract positively charged ions generated in the plasma into the via holes and grooves with high aspect ratio on the surface of the substrate.

The collimator 110 performs a function as a filter to trap ions and neutral particles emitted from the target 142 at an angle exceeding a selected angle (almost perpendicular to the substrate 154). The collimator 110 may be one of the collimators 310, 410, and 510 shown in FIGS. 3, 4, and 5, respectively. The collimator 110 having the characteristic of radially decreasing the aspect ratio from the center allows a large percentage of ions emitted from the peripheral area of the target 142 to pass through the collimator 110. Therefore, the number of ions deposited on the peripheral area of the substrate 154 and the angle of arrival of the ions can be increased at the same time. Therefore, according to embodiments of the present invention, the material can be sputter deposited more uniformly across the surface of the substrate 154. In addition, materials can be deposited more uniformly on the bottom and sidewalls of the structure with high aspect ratio, especially via holes and grooves with high aspect ratio near the periphery of the substrate 154.

In addition, in order to provide a sputter-deposited material with greater coverage at the bottom and sidewalls of the feature structure with a high aspect ratio, the material that is sputter deposited on the field and bottom regions of the feature structure can be sputter etched. In one embodiment, the system controller 101 applies a high bias voltage to the seat 152 so that the target 142 ion-etchs the film that has been deposited on the substrate 154. Therefore, the field deposition rate onto the substrate 154 is reduced, and the sputtered material is redeposited onto the sidewalls or bottom of the feature structure with a high aspect ratio. In one embodiment, the system controller 101 applies a high bias voltage and a low bias voltage to the base 152 in a pulse or alternating manner, so that the process becomes a pulse deposition/etch process. In one embodiment, in particular, the collimator 110 unit located below the magnet 172 directs a large amount of deposited material toward the substrate 154. Thus, at any particular time, material can be deposited in one area of the substrate 154, while material that has been deposited in another area of the substrate 154 can be etched.

In one embodiment, in order to provide greater coverage of the sputter-deposited material on the sidewalls of features with a high aspect ratio, a secondary plasma such as argon plasma (which is produced in the chamber near the substrate) may be used 154) to sputter etch the material deposited on the bottom of the feature. In one embodiment, the chamber 100 includes an RF coil 141 that is attached to the lower shield 180 by a plurality of coil spacers 143 that electrically insulate the coil 141 from the lower shield 180. The system controller 101 sends a signal to apply RF power through the shield 180 to the coil 141 through a feedthrough standoff (not shown). In one embodiment, the RF coil inductively couples RF energy into the interior of the chamber 100 to ionize the precursor gas (eg, argon) to maintain the secondary plasma near the substrate 154. The secondary plasma sputters a deposition layer from the bottom of the high aspect ratio feature structure and deposits material onto the sidewall of the feature structure.

Still referring to FIG. 1, the collimator 110 may be attached to the upper shield 186 by a plurality of radial brackets 111.

FIG. 6 is an enlarged cross-sectional view of a bracket 611 used to attach the collimator 110 to the upper shield 186 according to an embodiment of the present invention. The bracket 611 includes an internally threaded tube 613 that is welded to the collimator 110 and extends radially outward from the collimator 110. A fastening member 615 (such as a bolt) may be inserted into the aperture of the upper shield 186 and threaded into the tube 613 to attach the collimator 110 to the upper shield 186 while making it possible to deposit threads on the tube 613 or the fastening member 615 Part of the material is minimized.

FIG. 7 is an enlarged cross-sectional view of a bracket 711 for attaching the collimator 110 to the upper shield 186 according to another embodiment of the present invention. The bracket 711 includes a screw nut 713 that is welded to the collimator 110 and extends radially outward from the collimator 110. An internally threaded fastening member 715 can be inserted through the aperture in the upper shield 186 and threaded onto the screw 713 to attach the collimator 110 to the upper shield 186 while making it possible to deposit on the screw 713 or tight The material of the threaded portion of the solid member 715 is minimized.

FIG. 8 is a schematic cross-sectional view of a semiconductor process system 800 having another embodiment of the process kit 840 described herein. Similar to the process kit 140, the process kit 840 includes a single-piece lower shield 180. However, unlike the process kit 140 that includes the separate collimator 110 coupled to the upper shield 186 through a radial bracket 111, the process kit 840 includes a single upper shield 886 that includes a shield portion 892 and integration The flux optimizer section 810. The monolithic structure of the shield 886 on the monolith allows maximum cooling efficiency. The integrated flux optimizer section 810 includes a plurality of orifices (omitted in Fig. 8) to guide the gas and/or material flux in the chamber as described above.

FIG. 9A is a partial cross-sectional view of a single-body shield 886 according to embodiments described herein. FIG. 9B is a top plan view of the single upper shield 886 of FIG. 9A according to the embodiments described herein. The size of the shield 886 on the single body is adjusted to surround the sputtering surface 145 of the sputtering target 142 facing the support base 152. The single-body shield 886 shields the adapter 144 of the chamber 100 to reduce sputter-deposited deposits originating from the sputtering surface 145 of the sputtering target 142.

As shown in Figures 8, 9A, and 9B, the single-body shield 886 is a single structure and includes a shield portion 892 and an integrated flux optimizer portion 810. For example, the shielding portion 892 and the integrated flux optimizer portion 810 can be manufactured from a single mass material. The shielding portion 892 includes a cylindrical strip 902. The cylindrical belt 902 includes a top wall 904 and a bottom wall 906. The support flange 908 extends radially outward from the top wall 904 of the cylindrical band 902. The support flange 908 includes a support surface 910 for supporting the adapter 144 of the chamber 800. In one embodiment, the support surface 910 and the bottom wall 906 intersect to form a 90 degree angle. In one embodiment, the support flange 908 has a plurality of slits that are shaped to receive the pins that align the upper shield 892 to the adapter 144. In one embodiment, the support flange 908 has one or more notches 940 positioned periodically around the cylindrical band 902.

As shown in FIG. 9A, the top wall 904 further includes a top surface 925, an inner periphery 926, and an outer periphery 928. The outer periphery of the top wall 904 and the support flange 908 intersect to form a stepped portion 932.

In one embodiment, as shown in Figure 8, the bottom wall 906 of the cylindrical band 902 has an outer diameter (illustrated by arrow "A"), adjusted to fit in the adapter 144 and supported under The stepped portion 1032 of the shield 180 (illustrated in FIG. 10B). In an embodiment, the outer diameter "A" of the bottom wall 906 is between about 18 inches (45.7 cm) and about 18.5 inches (47 cm). In another embodiment, the outer diameter "A" of the bottom wall 906 is between about 18.1 inches (46 cm) to about 18.2 inches (46.2 cm). In one embodiment, the cylindrical band 902 has an inner diameter illustrated by arrow "B". In one embodiment, the inner diameter "B" of the cylindrical band 902 is between about 17.2 inches (43.7 cm) and about 17.9 inches (45.5 cm). In another embodiment, the inner diameter "B" of the cylindrical band 902 is between about 17.5 inches (44.5 cm) to about 17.7 inches (45 cm). In one embodiment, the top wall 904 has an outer diameter illustrated with arrow "C". In one embodiment, the top wall 904 and the bottom wall 906 have the same inner diameter "B".

In one embodiment, the outer diameter "C" of the top wall 904 is between about 18 inches (45.7 cm) and about 18.5 inches (47 cm). In another embodiment, the outer diameter "C" of the top wall 904 is between about 18.3 inches (46.5 cm) to about 18.4 inches (46.7 cm). In one embodiment, the outer diameter “C” of the top wall 904 is greater than the outer diameter “A” of the bottom wall 906.

The integrated flux optimizer portion 810 may be designed similar to one of the collimators 310, 410, or 510 shown in FIGS. 3, 4, and 5, respectively. As shown in FIG. 9B, the integrated flux optimizer portion 810 is usually a honeycomb structure in a close-packed configuration, the honeycomb structure having a hexagonal wall 942 for separating a hexagonal orifice 944. The aspect ratio of the hexagonal orifice 944 can be defined as the depth of the orifice 944 (equal to the thickness of the integrated flux optimizer portion 810) divided by the width of the orifice 946. In one embodiment, the hexagonal wall 942 adjacent to the shielding portion 892 has a chamfer 950 and a radius.

In one embodiment, the individual upper shield 886 can be mechanically formed from a single piece of aluminum. The shield 886 on the monomer can be selectively coated or anodized. Alternatively, the on-cell shield 886 may be made of other materials compatible with the process environment, and may also include one or more sections. Alternatively, the shielding portion 892 of the upper shield and the integrated flux optimizer portion 810 may be formed in individual segments and coupled together using appropriate attachment means such as welding.

Figures 10A and 10B are partial cross-sectional views of the shield under the embodiments described herein. Figure 10C is a top view of one embodiment of the shield under Figure 10A. As shown in FIGS. 1 and 10A-10C, the lower shield 180 has a single structure and includes a cylindrical outer band 196, a base plate 198, and an inner cylindrical band 103. The cylindrical outer band 196 has a diameter adjusted to surround the sputtering surface 145 of the sputtering target 142 and the peripheral edge 153 of the seat 152. The cylindrical outer band 196 includes an upper portion 1012, a middle portion 1014, and a lower portion 1016. The upper portion 1012 is sized to surround the sputtering surface 145 of the sputtering target 142. The support flange 182 extends radially outward from the upper portion 1012 of the cylindrical outer band 196. The support flange 182 includes a support surface 1024 for supporting the chamber wall 150 of the chamber 100. The support surface 1024 may have a plurality of slits shaped to receive a latch that aligns the lower shield 180 to the chamber wall 150 or any adapter positioned between the chamber wall 150 and the lower shield 180 . In an embodiment, the support surface 1024 has a surface roughness of about 10 to about 80 microinches, or even about 16 to about 63 microinches, or in an embodiment, a surface roughness of about 32 microinches.

As shown in FIG. 10B, the upper portion 1012 includes a top surface 1025, an inner periphery 1026, and an outer periphery 1028. The outer periphery 1028 extends upward above the top surface 1025 to form an annular lip 1030. The annular lip 1030 forms a stepped portion 1032 having a top surface 1025. In one embodiment, the annular lip 1030 is positioned perpendicular to the top surface 1025 to form a stepped portion 1032. The stepped portion 1032 provides a support surface to engage the upper shield 186.

In one embodiment, the annular lip 1030 has an outer diameter illustrated by arrow "D". In one embodiment, the outer diameter "D" of the annular lip 1030 is between about 18.4 inches (46.7 cm) and about 18.7 inches (47.5 cm). In another embodiment, the outer diameter "D" of the annular lip 1030 is between about 18.5 inches (47 cm) and about 18.6 inches (47.2 cm). In one embodiment, the annular lip 1030 has an inner diameter illustrated by arrow "E". In one embodiment, the inner diameter "E" of the annular lip 1030 is between about 18.2 inches (46.2 cm) and about 18.5 inches (47 cm). In another embodiment, the inner diameter "E" of the annular lip 1030 is between about 18.3 inches (46.5 cm) and about 18.4 inches (46.7 cm).

In one embodiment, the outer diameter of the top surface 1025 is the same as the inner diameter "E" of the annular lip 1030. In one embodiment, the top surface has an inner diameter illustrated by arrow "F". In one embodiment, the inner diameter "F" of the top surface 1025 is between about 17.2 inches (43.7 cm) and about 18 inches (45.7 cm). In another embodiment, the inner diameter "F" of the top surface 1025 is between about 17.5 inches (44.5 cm) to about 17.6 inches (44.7 cm).

In one embodiment, the inner periphery 1026 of the upper portion 1012 is angled radially outward at an angle a from the vertical direction. In one embodiment, the angle a between the vertical direction and the vertical direction is about 2° to about 10°. In one embodiment, the angle a is about 4° from the vertical.

The lower portion 1016 is sized to surround the seat 152. The base plate 198 extends radially inward from the lower portion 1016 of the cylindrical outer band 196. The cylindrical inner band 103 is coupled to the base plate 198 and is sized to surround the seat 152. The cylindrical inner band 103, the base plate 198, and the cylindrical outer band 196 form a U-shaped channel. The cylindrical inner belt 103 includes a height lower than the height of the cylindrical outer belt 196. In one embodiment, the height of the inner cylindrical band 103 is about one fifth of the height of the cylindrical outer band 196. In one embodiment, the middle portion 1014 has a recess 1040. In one embodiment, the cylindrical outer band 196 has a plurality of gas holes 1042.

In one embodiment, the base plate 198 has an outer diameter illustrated by arrow "G". In one embodiment, the outer diameter "G" of the base plate 198 is between about 17 inches (43.2 cm) to about 17.4 inches (44.2 cm). In another embodiment, the outer diameter "G" of the base plate 198 is between about 17.1 inches (43.4 cm) to about 17.2 inches (43.7 cm). In one embodiment, the base plate 198 has an inner diameter illustrated by arrow "I". In one embodiment, the inner diameter "I" of the base plate 198 is between about 13.9 inches (35.3 cm) and about 14.4 inches (36.6 cm). In another embodiment, the inner diameter "I" of the base plate 198 is between about 14 inches (35.6 cm) to about 14.1 inches (35.8 cm).

In one embodiment, the inner cylindrical band 103 has an outer diameter illustrated by arrow "H". In one embodiment, the outer diameter "H" of the inner cylindrical band is between about 14.0 inches (35.6 cm) to about 14.3 inches (36.3 cm). In another embodiment, the inner cylindrical band 103 has an outer diameter illustrated by arrow "H". In one embodiment, the outer diameter "H" of the inner cylindrical band 103 is between about 14.2 inches (36.1 cm) to about 14.3 inches (36.3 cm).

In one embodiment, the cylindrical outer band 196, the base plate 198, and the inner cylindrical band 103 comprise a single structure. The single-shot shield 180 is superior to conventional shields that include multiple parts (usually two or three separate pieces to assemble the entire lower shield). For example, in the heating and cooling process, the shielding of more components in a single segment is more uniform in heat shielding. For example, the shield and chamber wall 150 have only one thermal contact surface under a single segment, so that the heat exchange between the shield 180 and the chamber wall 150 can be more controlled. The shield 180 with multiple shield members makes it more difficult and laborious to remove the shield during cleaning. The single-segment shield 180 has a continuous surface exposed to sputter deposition without interfaces or corners that are difficult to clean. The single-segment shield 180 can also effectively shield the chamber wall 150 from sputter deposition during the process cycle.

In one embodiment, the upper screens 186, 886 and/or the lower screen 180 may be made of 300 series stainless steel, or in other embodiments, may be made of aluminum. In one embodiment, the exposed surfaces of the upper walls 186, 886 and/or the lower walls 180 are treated with CLEANCOATTW, which is available from Applied Materials of Santa Clara, California. CLEANCOATTW is a twin-wire aluminum arc spray coating applied to substrate processing chamber components (for example, upper screen 186, 886 and/or lower screen 180) to reduce particle shedding and deposition On the shield, to prevent contamination of the substrate in the chamber. In one embodiment, the dual-core aluminum arc spray on the upper walls 186, 886 and/or the lower walls 180 has a surface roughness of from about 600 to about 2300 microinches.

The upper screens 186, 886 and/or the lower screen 180 have exposed surfaces facing the internal space in the chambers 100, 800. In one embodiment, the exposed surface is bead blasted to have a surface roughness of 175±75 microinches. The textured bead spray surface is used to reduce particle shedding and prevent contamination in the chambers 100, 800. The average value of the surface roughness is the average of the absolute values of the displacements along the average line of the roughness characteristics of the exposed surface from the peak to the valley. The average roughness, skewness, or other properties can be determined by a profilometer that moves the needle on the exposed surface and produces a highly perturbed trajectory of roughness on the surface, or by using scanning electrons that reflect electron beams from the surface Microscope to produce an image of the surface.

Although the foregoing is directed to the embodiments of the present invention, other and further embodiments can be developed without departing from the basic scope of the present invention and the scope determined by the following patent applications.

100‧‧‧ chamber 101‧‧‧ system controller 102‧‧‧ Cover ring 103‧‧‧ Inner lip 110‧‧‧collimator 111‧‧‧radial support 126‧‧‧Hexagonal wall 128‧‧‧ Orifice 129‧‧‧ width 141‧‧‧ coil 142‧‧‧target material 143‧‧‧coil spacer 144‧‧‧ adapter 146‧‧‧ dielectric isolator 148‧‧‧Power source 150‧‧‧Chamber wall 152‧‧‧ Block 153‧‧‧ Peripheral edge 154‧‧‧ Base material 156‧‧‧ Power source 158‧‧‧Expansion bag 160‧‧‧Bottom chamber wall 162‧‧‧gas source 164‧‧‧mass flow controller 170‧‧‧ magnetron 172‧‧‧ magnet 174‧‧‧ base plate 176‧‧‧ shaft 180‧‧‧lower shield 182‧‧‧upper flange 184‧‧‧Flange 186‧‧‧Upper shield 188‧‧‧ narrow gap 190‧‧‧ protruding top 196‧‧‧Tubular section/cylindrical outer band 198‧‧‧Bottom section/base plate 310‧‧‧ Collimator 320‧‧‧ Central area 340‧‧‧ surrounding area 410‧‧‧ collimator 420‧‧‧ Central area 440‧‧‧ Peripheral area 510‧‧‧collimator 520‧‧‧central area 540‧‧‧ surrounding area 611‧‧‧ bracket 613‧‧‧ tube 615‧‧‧ fastening member 711‧‧‧Bracket 713‧‧‧Screw 715‧‧‧Fasting member 800‧‧‧Single block collimator/process system 810‧‧‧Optimizer part 886‧‧‧Single shield 892‧‧‧Shielded part

In order to make the above-mentioned features of the present invention more obvious and understandable, it can be explained with reference to the embodiments, and some of them are shown as drawings. It should be noted that although the attached drawings disclose specific embodiments of the present invention, they are not intended to limit the spirit and scope of the present invention. Anyone who is familiar with the art can make various modifications and retouches to obtain equivalent embodiments. .

FIG. 1 is a schematic cross-sectional view of a semiconductor process system having an embodiment of the process kit described herein.

Figure 2 is a top plan view of a collimator according to embodiments described herein.

Figure 3 is a schematic cross-sectional view of a collimator according to embodiments described herein.

Figure 4 is a schematic cross-sectional view of a collimator according to embodiments described herein.

Figure 5 is a schematic cross-sectional view of a collimator according to embodiments described herein.

Figure 6 is an enlarged partial cross-sectional view of a bracket according to embodiments described herein, the bracket being used to attach a collimator to a shield above a PVD chamber.

Figure 7 is a partial cross-sectional view of a bracket according to embodiments described herein, the bracket being used to attach a collimator to a shield above a PVD chamber.

FIG. 8 is a schematic cross-sectional view of a semiconductor process system having another process kit described herein.

FIG. 9A is a partial cross-sectional view of a shield on a cell according to embodiments described herein.

FIG. 9B is a top plan view of the shield on the cell of FIG. 9A according to the embodiments described herein.

Figure 10A is a cross-sectional view of the lower shield according to one of the embodiments described herein.

FIG. 10B is a partial cross-sectional view of an embodiment of the shield under FIG. 10A.

Figure 10C is a top view of one embodiment of the shield under Figure 10A.

Domestic storage information (please note in order of storage institution, date, number) no

Overseas hosting information (please note in order of hosting country, institution, date, number) no

101‧‧‧System Controller

102‧‧‧covering ring

103‧‧‧Inner lip

142‧‧‧Target

143‧‧‧coil spacer

144‧‧‧Adapter

146‧‧‧Dielectric isolator

148‧‧‧Power source

150‧‧‧Chamber wall

152‧‧‧ seat

153‧‧‧ peripheral edge

154‧‧‧ Base material

156‧‧‧Power source

158‧‧‧Telescopic bag

160‧‧‧Bottom chamber wall

162‧‧‧Gas source

164‧‧‧mass flow controller

170‧‧‧Magnetron

172‧‧‧ magnet

174‧‧‧ base plate

176‧‧‧ axis

180‧‧‧lower shield

182‧‧‧Upper flange

184‧‧‧Flange

188‧‧‧Narrow gap

190‧‧‧ Highlight the top

196‧‧‧Tubular section/cylindrical outer band

198‧‧‧Bottom section/base

800‧‧‧Single block collimator/process system

810‧‧‧Optimizer

886‧‧‧single shield

892‧‧‧Shielded part

Claims (14)

A collimator, including: A first surface and an opposite second surface, the second surface facing away from the first surface, the second surface has a first portion, a second portion and a third portion, the first portion and the first surface At a first distance, the second portion is at a second distance from the first surface, and the third portion extends between the first portion and the second portion; A honeycomb structure having walls defining and separating a plurality of individual orifices extending from the first surface to the second surface, wherein the individual orifices include: A first aperture in a central area, the first aperture having a first aspect ratio and extending from the first surface to the first portion of the second surface; A second plurality of apertures in a peripheral area, the second plurality of apertures having a second aspect ratio and extending from the first surface to the second portion of the second surface, the second depth width Is smaller than the first aspect ratio; and A third plurality of orifices in a transition area, the third plurality of orifices being disposed from the peripheral area to the central area and extending from the first surface to the third portion, wherein the third plurality of orifices A depth-to-width ratio of A decreases radially from the central region to the peripheral region along the transition region in a linear manner. The collimator according to claim 1, wherein a thickness of the collimator is thicker in the central area than in the peripheral area. The collimator as described in claim 2 includes a material selected from the group consisting of aluminum, copper, and stainless steel. The collimator of claim 2, wherein the aspect ratio of the orifices at the central area is 3:1, and the aspect ratio of the orifices at the peripheral area is 1 :1. The collimator of claim 1, wherein the walls have a thickness between 0.06 inches and 0.18 inches. The collimator of claim 6, wherein the thickness is between 0.12 inches and 0.15 inches. The collimator according to claim 1, wherein the peripheral area of the honeycomb structure has a chamfer wall. An upper shield for a PVD chamber includes: Collimator as described in claim 1; and One shielded part. An upper shield for a PVD chamber includes: Collimator as described in claim 2; and One shielded part. The upper shield as described in claim 9, wherein the collimator is coupled to the shield portion via a bracket, the bracket including: An externally threaded member; and An internally threaded member that meshes with the externally threaded member. The upper shield as described in claim 9, wherein the collimator is welded to the shield portion. The upper shield as described in claim 9, wherein the shield portion and the collimator are machined from a single piece of aluminum. The upper shield as recited in claim 9, wherein the shield portion includes a support flange extending outward from a cylindrical band. The upper shield as recited in claim 13, wherein the support flange includes one or more notches positioned periodically around the cylindrical band.

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