US20220375734A1 - Methods and apparatus for processing a substrate using improved shield configurations - Google Patents
Methods and apparatus for processing a substrate using improved shield configurations Download PDFInfo
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- US20220375734A1 US20220375734A1 US17/327,955 US202117327955A US2022375734A1 US 20220375734 A1 US20220375734 A1 US 20220375734A1 US 202117327955 A US202117327955 A US 202117327955A US 2022375734 A1 US2022375734 A1 US 2022375734A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3441—Dark space shields
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
Definitions
- Embodiments of the present disclosure generally relate to a methods and apparatus for processing a substrate, and more particularly, to methods and apparatus for processing a substrate using improved shield configurations.
- Magnitude of target self-bias can impact the sputtering rates of a target and an anode (e.g., shields, wafer, etc.) material.
- anode e.g., shields, wafer, etc.
- higher negative self-bias on targets is obtained by using extremely wide body chambers, thus increasing the anode area.
- such an approach can lead to increased footprint of an PVD chamber.
- a process kit for use in a physical vapor deposition chamber comprises a shield comprising an inner wall comprising an upper portion having a first wavy fin configuration and a bottom portion having a second wavy fin configuration different from the first wavy fin configuration such that a surface area of the shield is about 1400 in 2 to about 1410 in 2 .
- a substrate processing apparatus comprises a chamber body having a substrate support disposed therein, a target coupled to the chamber body opposite the substrate support, an RF power source to form a plasma within the chamber body, and a shield comprising an inner wall comprising an upper portion having a first wavy fin configuration and a bottom portion having a second wavy fin configuration different from the first wavy fin configuration such that a surface area of the shield is about 1400 in 2 to about 1410 in 2 .
- a process kit for use in a physical vapor deposition chamber comprises a shield comprising an inner wall comprising an upper portion having a first wavy fin configuration and a bottom portion having a second wavy fin configuration different from the first wavy fin configuration such that a surface area of the shield is about 1400 in 2 to about 1400 in 2 , wherein the second wavy fin configuration has a non-continuous generally sinusoidal configuration, and wherein the first wavy fin configuration has a generally V-shaped bottom portion extending away from the inner wall of the shield.
- FIG. 1 is a schematic cross-sectional view of a processing chamber, in accordance with some embodiments of the present disclosure.
- FIG. 2 is a sectional view of a shield, in accordance with some embodiments of the present disclosure.
- FIG. 3 is an enlarged view of the indicated area of detail of FIG. 2 , in accordance with some embodiments of the present disclosure.
- FIG. 4 is an enlarged view of the indicated area of detail of FIG. 2 , in accordance with some embodiments of the present disclosure.
- the improved methods and apparatus provide a grounded shield for a PVD processing apparatus that may advantageously lower the potential difference to the grounded shield while maintaining target to substrate spacing, thereby facilitating PVD processing with reduced or eliminated re-sputtering of the grounded shield.
- a shield comprising an inner wall comprising an upper portion having a first wavy fin configuration and a bottom portion having a second wavy fin configuration different from the first wavy fin configuration such that a surface area of the shield is about 1000 in 2 to about 1410 in 2 .
- the surface area is defined as the inner surface area of the shield (e.g., inner surface area exposed to a processing volume of a processing chamber).
- FIG. 1 is a schematic cross-sectional view of a processing chamber 100 (e.g., a substrate processing apparatus, such as a physical vapor deposition chamber) in accordance with some embodiments of the present disclosure.
- a processing chamber 100 e.g., a substrate processing apparatus, such as a physical vapor deposition chamber
- the specific configuration of the PVD chamber is illustrative and PVD chambers having other configurations may also benefit from modification in accordance with the teachings provided herein.
- suitable PVD chambers include any of the line of PVD processing chambers, commercially available from Applied Materials, Inc., of Santa Clara, California. Other processing chambers from Applied Materials, Inc. or other manufactures may also benefit from the inventive apparatus disclosed herein.
- the processing chamber 100 includes a chamber lid 101 disposed atop a chamber body 104 and removable from the chamber body 104 .
- the chamber lid 101 generally includes a target assembly 102 and a grounding assembly 103 .
- the chamber body 104 contains a substrate support 106 for receiving a substrate 108 thereon.
- the substrate support 106 is configured to support a substrate such that a center of the substrate is aligned with a central axis 186 of the processing chamber 100 .
- the substrate support 106 may be located within a lower grounded enclosure wall 110 , which may be a wall of the chamber body 104 .
- the lower grounded enclosure wall 110 may be electrically coupled to the grounding assembly 103 of the chamber lid 101 such that an RF return path is provided to an RF power source 182 disposed above the chamber lid 101 .
- an RF return path is provided to an RF power source 182 disposed above the chamber lid 101 .
- other RF return paths are possible, such as those that travel from the substrate support 106 via a process kit shield (e.g., a grounded shield (e.g., anode) and ultimately back to the grounding assembly 103 of the chamber lid 101 .
- the RF power source 182 may provide RF energy to the target assembly 102 as discussed below.
- the substrate support 106 has a material-receiving surface facing a principal surface of a target 114 (e.g., a cathode opposite the substrate support) and supports the substrate 108 to be sputter coated with material ejected from the target 114 in planar position opposite to the principal surface of the target 114 .
- the substrate support 106 may include a dielectric member 105 having a substrate processing surface 109 for supporting the substrate 108 thereon.
- the substrate support 106 may include one or more conductive members 107 disposed below the dielectric member 105 .
- the dielectric member 105 and the one or more conductive members 107 may be part of an electrostatic chuck, RF electrode, or the like which may be used to provide chucking or RF power to the substrate support 106 .
- the substrate support 106 may support the substrate 108 in a first volume 120 (processing volume) of the chamber body 104 .
- the first volume 120 is a portion of the inner volume of the chamber body 104 that is used for processing the substrate 108 and may be separated from the remainder of the inner volume (e.g., a non-processing volume) during processing of the substrate 108 (for example, via a shield 138 ).
- the first volume 120 is defined as the region above the substrate support 106 during processing (for example, between the target 114 and the substrate support 106 when in a processing position).
- the substrate support 106 may be vertically movable to allow the substrate 108 to be transferred onto the substrate support 106 through an opening (such as a slit valve, not shown) in the lower portion of the chamber body 104 and thereafter raised to a processing position.
- a bellows 122 connected to a bottom chamber wall 124 may be provided to maintain a separation of the inner volume of the chamber body 104 from the atmosphere outside of the chamber body 104 .
- One or more gases may be supplied from a gas source 126 through a mass flow controller 128 into the lower part of the chamber body 104 .
- An exhaust port 130 may be provided and coupled to a pump (not shown) via a valve 132 for exhausting the interior of the chamber body 104 and to facilitate maintaining a desired pressure inside the chamber body 104 .
- An RF bias power source 134 may be coupled to the substrate support 106 in order to induce a negative DC bias on the substrate 108 .
- a negative DC self-bias may form on the substrate 108 during processing.
- RF energy supplied by the RF bias power source 134 may range in frequency from about 2 MHz to about 60 MHz, for example, non-limiting frequencies such as 2 MHz, 13.56 MHz, or 60 MHz can be used.
- the substrate support 106 may be grounded or left electrically floating.
- a capacitance tuner 136 may be coupled to the substrate support 106 for adjusting voltage on the substrate 108 for applications where RF bias power is not be desired.
- the shield 138 (e.g., a grounded process kit shield) can be made of one or more suitable material including, but not limited to, aluminum alloy, stainless steel, and/or titanium.
- the shield 138 can be made from stainless steel.
- the shield 138 can be fabricated using one or more fabrication processes.
- the shield 138 can be fabricated using one or more conventional 3-D printing processes. Alternatively, one or more other conventional processes can be used to fabricate the shield 138 .
- the shield 138 surrounds the first volume 120 of the chamber body 104 to protect other chamber components from damage and/or contamination from processing.
- the shield 138 may be coupled to a ledge 140 of an upper grounded enclosure wall 116 of the chamber body 104 .
- the shield 138 may be coupled to the chamber lid 101 , for example via a retaining ring (not shown).
- the shield 138 comprises an inner wall 143 disposed between the target 114 and the substrate support 106 .
- the inner wall 143 is provided with an innermost diameter configured to surround the target 114 when disposed in the processing chamber 100 .
- a ratio of a surface area of the shield 138 to a planar area of the inner diameter is about 3 to about 10.
- the height of the shield 138 depends upon the substrate distances 185 between the target 114 and the substrate 108 .
- substrate distances 185 between the target 114 and the substrate 108 can be about 69 mm.
- the substrate distances 185 between the target 114 and the substrate 108 , and correspondingly, the height of the shield 138 can be scaled based on the diameter of the substrate 108 .
- the ratio of the diameter of the target 114 to the diameter of the substrate is about 1.4.
- a processing chamber for processing a 300 mm substrate may have a target 114 having a diameter of about 419 mm or, in some embodiments, a processing chamber for processing a 450 mm substrate may have a target 114 having a diameter of about 625 mm.
- the ratio of the diameter of the target 114 to the height of the shield 138 is about 4.1 to about 4.3, or in some embodiments, about 4.2.
- the target 114 may have a diameter of about 419 mm and the shield 138 may have a height of about 100 mm or, in some embodiments of a processing chamber for processing a 450 mm substrate, the target 114 may have a diameter of about 625 mm and the shield 138 may have a height of about 150 mm. Other diameters and heights may also be used to provide the desired ratio.
- the substrate distances 185 between the target 114 and the substrate 108 is about 50.8 mm to about 152.4 mm for a 300 mm substrate or about 101.6 mm to about 203.2 mm for a 450 mm substrate.
- a processing chamber having the above configurations is referred to herein as a “short throw” processing chamber.
- the short throw processing chamber advantageously increases the deposition rate over processing chambers having longer target to substrate distances 185 .
- conventional processing chambers having longer target to substrate distances 185 provide a deposition rate of about 1 to about 2 angstroms/second.
- a deposition rate of about 5 to about 10 angstroms/second can be obtained while maintaining high ionization levels.
- a processing chamber in accordance with embodiments of the present disclosure may provide a deposition rate of about 10 angstroms/second.
- High ionization levels at such short spacing can be obtained by providing a high pressure, for example, about 60 millitorr to about 140 millitorr, and a very high driving frequency, for example, from about 27 MHz to about 162 MHz, for example such as at about such readily commercially available frequencies as 27.12, 40.68, 60, 81.36, 100, 122, or 162.72 MHz.
- a high pressure for example, about 60 millitorr to about 140 millitorr
- a very high driving frequency for example, from about 27 MHz to about 162 MHz, for example such as at about such readily commercially available frequencies as 27.12, 40.68, 60, 81.36, 100, 122, or 162.72 MHz.
- both the electrodes e.g., the cathode or powered electrode and the anode or grounded electrode
- both the electrodes will quickly acquire electrons until the electrodes can no longer attract more of the electrons due to repulsion from accumulated electrons.
- both the electrodes will attract positive ions, however due to the lower mobility of ions, the electrodes will not neutralise all the electrons and will acquire a net negative bias relative to plasma.
- the inventors have found that if the area of both the electrodes (cathode (target) and anode (shield, wafer, dep ring, cover ring, etc.)) is comparable, then the ions created in the plasma will be attracted towards both the electrodes in equal proportions during their respective negative half-cycles, which, in turn, would lead to sputtering of material from both the electrodes in comparable proportions.
- the area of the target is usually preferred to be smaller (e.g., helps to enable more deposition and less etching on the anode side) than the area of the anode (shield, wafer, dep ring, cover ring, etc.), which, in turn, can lead to a higher magnitude of negative bias and, thus higher electric field to accelerate the ions towards the target. Accordingly, depending on an area of the target (cathode) relative to the shield (anode), there will either be deposition from the target (sputter-deposition) or there will be etching (re-sputtering) of the anode (wafer, shields, dep ring, etc.).
- Re-sputtering of the shield 138 causes undesirable contamination within the processing chamber 100 .
- the re-sputtering of the shield 138 is a result of the high voltage on the shield 138 .
- the amount of voltage that appears on the target 114 (e.g., the cathode or powered electrode) and the grounded shield 138 (e.g., the anode or grounded electrode) is dependent on the ratio of the surface area of the shield 138 to the surface area of the target 114 , as a greater voltage appears on the smaller electrode.
- the surface area of the target 114 can be larger than the surface area of the shield 138 resulting in a greater voltage upon the shield 138 , and in turn, resulting in the undesired re-sputtering of the shield 138 .
- the target may have a diameter of about 419 mm with a corresponding surface area of about 138 mm 2 and the shield 138 may have a height of about 100 mm with a corresponding surface area of about 132 mm 2 or, in some embodiments of a processing chamber for processing a 450 mm substrate, the target may have a diameter of about 625 mm with a corresponding surface area of about 307 mm 2 and the shield 138 may have a height of about 150 mm with a corresponding surface area of about 295 mm 2 .
- the inventors have observed that in some embodiments of processing chambers where the ratio of the surface area of the shield 138 to the surface area of the target 114 is less than 1, a greater voltage is incurred upon the shield 138 , which in turn, results in the undesired re-sputtering of the shield 138 .
- the surface area of the shield 138 e.g., an inner surface area exposed to a processing volume of a processing chamber
- the inventors have observed that a ratio of the surface area of the shield 138 to the surface area of the target 114 of about 3 to about 10 advantageously minimizes or prevents the re-sputtering of the shield 138 .
- a ratio of the surface area of the shield 138 to the surface area of the target 114 of about 3 to about 10 advantageously provides a relatively high negative self-biasing at the target 114 .
- the relatively high negative self-biasing at the target 114 attracts more positive plasma ions (e.g., argon ions) toward the target 114 during operation, which, in turn, increases target sputtering and decreases re-sputtering (e.g., etching) of the shield 138 , a deposition ring (not shown), the substrate 108 , or another component.
- the surface area of the shield 138 cannot be increased by simply increasing the height of the shield 138 due to the desired ratio of the diameter of the target 114 to the height of the shield 138 , as discussed above.
- the inventors have observed that, in some embodiments of a processing chamber having the processing conditions discussed above (e.g., process pressures and RF frequencies used), the ratio of the surface area of the shield 138 to the height of the shield 138 must be about 2 to about 3 to advantageously minimize or prevent the re-sputtering of the shield 138 .
- the diameter of the shield 138 cannot be increased sufficiently to increase the surface area of the shield 138 to prevent re-sputtering of the shield 138 due to physical constraint in the size of the processing chamber. For example, an increase in the diameter of the shield 138 of 25.4 mm results in a surface area increase of only 6%, which is insufficient to prevent the re-sputtering of the shield 138 .
- FIG. 2 is a sectional view of a shield 200
- FIG. 3 is an enlarged view of the indicated area of detail of FIG. 2
- FIG. 4 is an enlarged view of the indicated area of detail of FIG. 2 , in accordance with some embodiments of the present disclosure.
- the shield 200 which is configured for use with the processing chamber 100 , includes an inner wall 203 with an innermost diameter D1 configured to surround a target when disposed in the processing chamber 100 .
- the innermost diameter D1 can be greater than a diameter of a target.
- the innermost diameter D1 which is measured from a flange 201 of the shield 200 , can be about 14.5 inches to about 14.75 inches, e.g., 14.6 inches.
- an outermost diameter D2 also measured from the flange 201 , can be about 16 inches to about 16.5 inches, e.g., 16.25 inches.
- the flange 201 is adjacent the upper portion of the inner wall 203 and is configured to rest on or couple to a support member of the processing chamber 100 , as described in greater detail below.
- a distance D 3 from a bottom surface 209 of a bottom portion 207 of the shield 200 to a top surface 211 of the flange 201 is about 3 inches to about 3.5 inches, e.g., 3.25 inches.
- the inner wall 203 comprises the upper portion 205 having a first wavy fin configuration 300 ( FIG. 3 ) and the bottom portion 207 having a second wavy fin configuration 400 ( FIG. 4 ) different from the first wavy fin configuration 300 .
- Having the wavy fin configurations as depicted in FIGS. 2-4 facilitates providing a shield with surface area of about 1000 in 2 to about 1410 in 2 (e.g., about 1400 in 2 to about 1404 in 2 ), thus providing a geometry that allows for deposition of highly insulating dielectric targets by increasing the negative self-bias on the target.
- the shield 138 and the first wavy fin configuration 300 and the second wavy fin configuration 400 can be monolithically fabricated using, for example, the 3-D printing process.
- the shield 138 can be formed using one or more fabrication processes other than the 3-D printing process and the first wavy fin configuration 300 and the second wavy fin configuration 400 can be fabricated using the 3-D printing process and subsequently attached to the shield 138 using one or more coupling apparatus, e.g., nuts, bolts, screws, soldering, etc.
- the first wavy fin configuration 300 has a generally V-shaped bottom portion 302 that connects to the inner wall 203 and a perpendicular top portion 304 .
- the V-shaped bottom portion 302 and perpendicular top portion 304 define a fin of the first wavy fin configuration that extends along the inner wall 203 .
- the first wavy fin configuration 300 has a diameter D 4 , which is measured from the perpendicular top portion 304 , of about 14 inches to about 14.50 inches, e.g., 14.25 inches, and a diameter D 5 , which is measured where the V-shaped bottom portion 302 connects to the inner wall 203 , of about 15 inches to about 15.25 inches, e.g., 15.15 inches, see FIG. 2 for example.
- the inner wall 203 of the shield 200 can have one or more fins of the first wavy fin configuration 300 disposed therealong.
- the inner wall 203 is shown comprising two (upper and lower) fins that are vertically aligned with each other. Each of the two fins can be substantially identical to each other.
- an upper fin and a lower fin of the first wavy fin configuration 300 can have an identical perpendicular top portion 304 and a different V-shaped bottom portion 302 to facilitate fabricating the first wavy fin configuration 300 .
- the upper fin of the of the first wavy fin configuration 300 can have an extension 306 that connects to the inner wall 203 and the lower fin of the of the first wavy fin configuration 300 can have a V-shaped bottom portion 302 that directly connects to the inner wall 203 (see FIG. 3 for example).
- the second wavy fin configuration 400 has a plurality of fins having a generally sinusoidal configuration 401 with alternating generally V-shaped ends 402 .
- the generally V-shaped ends 402 can have the same general configuration.
- the generally V-shaped ends 402 can comprise two diverging ends.
- the generally V-shaped ends 402 can comprise a first portion 404 extending toward the inner wall 203 and a second portion 406 extending away from the inner wall 203 .
- the first portion 404 and the second portion 406 can have the same length or different lengths.
- a V-shaped end disposed closest to where the shield 200 connects to a cover ring of the processing chamber 100 can have the first portion 404 and the second portion 406 with the same length and the remaining V-shaped ends can have the first portion 404 and the second portion 406 with different lengths.
- the second wavy fin configuration 400 can have a continuous or non-continuous configuration.
- the second wavy fin configuration 400 has a non-continuous configuration.
- an annular groove 408 can extend along the generally sinusoidal configuration 401 of the second wavy fin configuration 400 .
- the annular groove 408 can have one or more suitable shapes, e.g., curved, straight, etc.
- the annular groove 408 can have a generally diamond or triangular shape.
- the annular groove can have a plurality of diamond shape cut-outs.
- a distance D 6 from the bottom surface 209 of the shield 200 to a top portion of a fin without the V-shaped end can be about 1.6 inches.
- a distance D 7 from the bottom surface 209 of the shield 200 to a top portion of a fin with the V-shaped end can be about 1.8 inches.
- a gap G 1 between each of fin of the first wavy fin configuration 300 and the second wavy fin configuration 400 can be about 0.175 inches.
- each fin of the first wavy fin configuration 300 and the second wavy fin configuration 400 with the described herein dimensions essentially hides the shield (anode) from a line of sight of deposition from the target.
- the chamber lid 101 rests on the ledge 140 of the upper grounded enclosure wall 116 . Similar to the lower grounded enclosure wall 110 , the upper grounded enclosure wall 116 may provide a portion of the RF return path between the upper grounded enclosure wall 116 and the grounding assembly 103 of the chamber lid 101 . However, other RF return paths are possible, such as via the grounded shield 138 .
- the shield 138 extends downwardly and may include one or more sidewalls configured to surround the first volume 120 .
- the shield 138 extends along, but is spaced apart from, the walls of the upper grounded enclosure wall 116 and the lower grounded enclosure wall 110 downwardly to below a top surface of the substrate support 106 and returns upwardly until reaching a top surface of the substrate support 106 (e.g., forming a u-shaped portion at the bottom of the shield 138 ).
- a first ring 148 (e.g., a cover ring) rests on the top of the u-shaped portion (e.g., a first position of the first ring 148 ) when the substrate support 106 is in its lower, loading position (not shown) but rests on the outer periphery of the substrate support 106 (e.g., a second position of the first ring 148 ) when the substrate support 106 is in its upper, deposition position (as illustrated in FIG. 1 ) to protect the substrate support 106 from sputter deposition.
- An additional dielectric ring 111 may be used to shield the periphery of the substrate 108 from deposition.
- the additional dielectric ring 111 may be disposed about a peripheral edge of the substrate support 106 and adjacent to the substrate processing surface 109 , as illustrated in FIG. 1 .
- the first ring 148 may include protrusions extending from a lower surface of the first ring 148 on either side of the inner upwardly extending u-shaped portion of the bottom of the shield 138 .
- An innermost protrusion may be configured to interface with the substrate support 106 to align the first ring 148 with respect to the shield 138 when the first ring 148 is moved into the second position as the substrate support is moved into the processing position.
- a substrate support facing surface of the innermost protrusion may be tapered, notched or the like to rest in/on a corresponding surface on the substrate support 106 when the first ring 148 is in the second position.
- a magnet 152 may be disposed about the chamber body 104 for selectively providing a magnetic field between the substrate support 106 and the target 114 .
- the magnet 152 may be disposed about the outside of the enclosure wall 110 in a region just above the substrate support 106 when in processing position.
- the magnet 152 may be disposed additionally or alternatively in other locations, such as adjacent the upper grounded enclosure wall 116 .
- the magnet 152 may be an electromagnet and may be coupled to a power source (not shown) for controlling the magnitude of the magnetic field generated by the electromagnet.
- the chamber lid 101 generally includes the grounding assembly 103 disposed about the target assembly 102 .
- the grounding assembly 103 may include a grounding plate 156 having a first surface 157 that may be generally parallel to and opposite a backside of the target assembly 102 .
- a grounding shield 112 may extend from the first surface 157 of the grounding plate 156 and surround the target assembly 102 .
- the grounding assembly 103 may include a support member 175 to support the target assembly 102 within the grounding assembly 103 .
- the support member 175 may be coupled to a lower end of the grounding shield 112 proximate an outer peripheral edge of the support member 175 and extends radially inward to support a seal ring 181 , the target assembly 102 and optionally, a dark space shield (e.g., that may be disposed between the shield 138 and the target assembly 102 , not shown).
- the seal ring 181 may be a ring or other annular shape having a desired cross-section to facilitate interfacing with the target assembly 102 and with the support member 175 .
- the seal ring 181 may be made of a dielectric material, such as ceramic. The seal ring 181 may insulate the target assembly 102 from the ground assembly 103 .
- the support member 175 may be a generally planar member having a central opening to accommodate the shield 138 and the target 114 .
- the support member 175 may be circular, or disc-like in shape, although the shape may vary depending upon the corresponding shape of the chamber lid and/or the shape of the substrate to be processed in the processing chamber 100 . In use, when the chamber lid 101 is opened or closed, the support member 175 maintains the shield 138 in proper alignment with respect to the target 114 , thereby minimizing the risk of misalignment due to chamber assembly or opening and closing the chamber lid 101 .
- the target assembly 102 may include a source distribution plate 158 opposing a backside of the target 114 and electrically coupled to the target 114 along a peripheral edge of the target 114 .
- the target 114 may comprise a source material 113 to be deposited on a substrate, such as the substrate 108 during sputtering, such as a metal, metal oxide, metal alloy, magnetic material, or the like.
- the target 114 may include a backing plate 162 to support the source material 113 .
- the backing plate 162 may comprise a conductive material, such as copper-zinc, copper-chrome, or the same material as the target, such that RF, and optionally DC, power can be coupled to the source material 113 via the backing plate 162 .
- the backing plate 162 may be non-conductive and may include conductive elements (not shown) such as electrical feedthroughs or the like.
- a conductive member 164 may be disposed between the source distribution plate and the backside of the target 114 to propagate RF energy from the source distribution plate to the peripheral edge of the target 114 .
- the conductive member 164 may be cylindrical and tubular, with a first end 166 coupled to a target-facing surface of the source distribution plate 158 proximate the peripheral edge of the source distribution plate 158 and a second end 168 coupled to a source distribution plate-facing surface of the target 114 proximate the peripheral edge of the target 114 .
- the second end 168 is coupled to a source distribution plate facing surface of the backing plate 162 proximate the peripheral edge of the backing plate 162 .
- the target assembly 102 may include a cavity 170 disposed between the backside of the target 114 and the source distribution plate 158 .
- the cavity 170 may at least partially house a magnetron assembly 196 .
- the cavity 170 is at least partially defined by the inner surface of the conductive member 164 , a target facing surface of the source distribution plate 158 , and a source distribution plate facing surface (e.g., backside) of the target 114 (or backing plate 162 ).
- the cavity 170 may be at least partially filled with a cooling fluid, such as water (H 2 O) or the like.
- a divider (not shown) may be provided to contain the cooling fluid in a desired portion of the cavity 170 (such as a lower portion, as shown) and to prevent the cooling fluid from reaching components disposed on the other side of the divider.
- An insulative gap 180 is provided between the grounding plate 156 and the outer surfaces of the source distribution plate 158 , the conductive member 164 , and the target 114 (and/or backing plate 162 ).
- the insulative gap 180 may be filled with air or some other suitable dielectric material, such as a ceramic, a plastic, or the like.
- the distance between the grounding plate 156 and the source distribution plate 158 depends on the dielectric material between the grounding plate 156 and the source distribution plate 158 . Where the dielectric material is predominantly air, the distance between the grounding plate 156 and the source distribution plate 158 should be between about 5 to about 40 mm.
- the grounding assembly 103 and the target assembly 102 may be electrically separated by the seal ring 181 and by one or more of insulators 160 disposed between the first surface 157 of the grounding plate 156 and the backside of the target assembly 102 , e.g., a non-target facing side of the source distribution plate 158 .
- the target assembly 102 has the RF power source 182 connected to an electrode 154 (e.g., a RF feed structure).
- the RF power source 182 may include an RF generator and a matching circuit, for example, to minimize reflected RF energy reflected back to the RF generator during operation.
- RF energy supplied by the RF power source 182 may range in frequency from about 13.56 MHz and to about 162 MHz or above.
- non-limiting frequencies such as 13.56 MHz, 27.12 MHz, 60 MHz, or 162 MHz can be used.
- a second energy source 183 may be coupled to the target assembly 102 to provide additional energy to the target 114 during processing.
- the second energy source 183 may be a DC power source to provide DC energy, for example, to enhance a sputtering rate of the target material (and hence, a deposition rate on the substrate).
- the second energy source 183 may be a second RF power source, similar to the RF power source 182 , to provide RF energy, for example, at a second frequency different than a first frequency of RF energy provided by the RF power source 182 .
- the second energy source 183 is a DC power source
- the second energy source may be coupled to the target assembly 102 in any location suitable to electrically couple the DC energy to the target 114 , such as the electrode 154 or some other conductive member (such as the source distribution plate 158 ).
- the second energy source 183 is a second RF power source
- the second energy source may be coupled to the target assembly 102 via the electrode 154 .
- the electrode 154 may be cylindrical or otherwise rod-like and may be aligned with a central axis 186 of the processing chamber 100 (e.g., the electrode 154 may be coupled to the target assembly at a point coincident with a central axis of the target, which is coincident with the central axis 186 ).
- the electrode 154 aligned with the central axis 186 of the processing chamber 100 , facilitates applying RF energy from the RF power source 182 to the target 114 in an asymmetrical manner (e.g., the electrode 154 may couple RF energy to the target at a “single point” aligned with the central axis of the PVD chamber).
- the central position of the electrode 154 helps to eliminate or reduce deposition asymmetry in substrate deposition processes.
- the electrode 154 may have any suitable diameter, however, the smaller the diameter of the electrode 154 , the closer the RF energy application approaches a true single point. For example, although other diameters may be used, in some embodiments, the diameter of the electrode 154 may be about 0.5 to about 2 inches.
- the electrode 154 may generally have any suitable length depending upon the configuration of the PVD chamber. In some embodiments, the electrode may have a length of between about 0.5 to about 12 inches.
- the electrode 154 may be fabricated from any suitable conductive material, such as aluminum, copper, silver, or the like.
- the electrode 154 may pass through an opening in the grounding plate 156 and is coupled to a source distribution plate 158 .
- the grounding plate 156 may comprise any suitable conductive material, such as aluminum, copper, or the like. Open spaces between the one or more insulators 160 allow for RF wave propagation along the surface of the source distribution plate 158 .
- the one or more insulators 160 may be symmetrically positioned with respect to the central axis 186 of the processing chamber 100 Such positioning may facilitate symmetric RF wave propagation along the surface of the source distribution plate 158 and, ultimately, to a target 114 coupled to the source distribution plate 158 .
- the RF energy may be provided in a more symmetric and uniform manner as compared to conventional PVD chambers due, at least in part, to the central position of the electrode 154 .
- a magnetron assembly 196 may be disposed at least partially within the cavity 170 .
- the magnetron assembly provides a rotating magnetic field proximate the target to assist in plasma processing within the processing chamber 104 .
- the magnetron assembly 196 may include a motor 176 , a motor shaft 174 , a gear box 178 , a gear box shaft 184 , and a rotatable magnet (e.g., a plurality of magnets 188 coupled to a magnet support member 172 ).
- the magnetron assembly 196 is rotated within the cavity 170 .
- the motor 176 , motor shaft 174 , gear box 178 , and gear box shaft 184 may be provided to rotate the magnet support member 172 .
- the magnetron drive shaft may be disposed along the central axis of the chamber, with the RF energy coupled to the target assembly at a different location or in a different manner.
- the motor shaft 174 of the magnetron may be disposed through an off-center opening in the grounding plate 156 . The end of the motor shaft 174 protruding from the grounding plate 156 is coupled to a motor 176 .
- the motor shaft 174 is further disposed through a corresponding off-center opening through the source distribution plate 158 (e.g., a first opening 146 ) and coupled to a gear box 178 .
- one or more second openings 198 may be disposed though the source distribution plate 158 in a symmetrical relationship to the first opening 146 to advantageously maintain axisymmetric RF distribution along the source distribution plate 158 .
- the one or more second openings 198 may also be used to allow access to the cavity 170 for items such as sensors or the like.
- the gear box 178 may be supported by any suitable means, such as by being coupled to a bottom surface of the source distribution plate 158 .
- the gear box 178 may be insulated from the source distribution plate 158 by fabricating at least the upper surface of the gear box 178 from a dielectric material, or by interposing an insulator layer 190 between the gear box 178 and the source distribution plate 158 , or the like.
- the gear box 178 is further coupled to the magnet support member 172 via the gear box shaft 184 to transfer the rotational motion provided by the motor 176 to the magnet support member 172 (and hence, the plurality of magnets 188 ).
- the gear box shaft 184 may advantageously be coincident with the central axis 186 of the processing chamber 100 .
- the magnet support member 172 may be constructed from any material suitable to provide adequate mechanical strength to rigidly support the plurality of magnets 188 .
- the plurality of magnets 188 may be configured in any manner to provide a magnetic field having a desired shape and strength to provide a more uniform full-face erosion of the target as described herein.
- the magnet support member 172 may be rotated by any other means with sufficient torque to overcome the drag caused on the magnet support member 172 and attached plurality of magnets 188 , for example due to the cooling fluid, when present, in the cavity 170 .
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Abstract
Methods and apparatus for processing a substrate using improved shield configurations are provided herein. For example, a process kit for use in a physical vapor deposition chamber comprises a shield comprising an inner wall comprising an upper portion having a first wavy fin configuration and a bottom portion having a second wavy fin configuration different from the first wavy fin configuration such that a surface area of the shield is about 1400 in2 to about 1410 in2.
Description
- Embodiments of the present disclosure generally relate to a methods and apparatus for processing a substrate, and more particularly, to methods and apparatus for processing a substrate using improved shield configurations.
- Magnitude of target self-bias can impact the sputtering rates of a target and an anode (e.g., shields, wafer, etc.) material. Commonly, higher negative self-bias on targets is obtained by using extremely wide body chambers, thus increasing the anode area. However, such an approach can lead to increased footprint of an PVD chamber.
- Methods and apparatus for processing a substrate using improved shield configurations are provided herein. In some embodiments, a process kit for use in a physical vapor deposition chamber comprises a shield comprising an inner wall comprising an upper portion having a first wavy fin configuration and a bottom portion having a second wavy fin configuration different from the first wavy fin configuration such that a surface area of the shield is about 1400 in2 to about 1410 in2.
- In accordance with at least some embodiments, a substrate processing apparatus comprises a chamber body having a substrate support disposed therein, a target coupled to the chamber body opposite the substrate support, an RF power source to form a plasma within the chamber body, and a shield comprising an inner wall comprising an upper portion having a first wavy fin configuration and a bottom portion having a second wavy fin configuration different from the first wavy fin configuration such that a surface area of the shield is about 1400 in2 to about 1410 in2.
- In accordance with at least some embodiments, a process kit for use in a physical vapor deposition chamber comprises a shield comprising an inner wall comprising an upper portion having a first wavy fin configuration and a bottom portion having a second wavy fin configuration different from the first wavy fin configuration such that a surface area of the shield is about 1400 in2 to about 1400 in2, wherein the second wavy fin configuration has a non-continuous generally sinusoidal configuration, and wherein the first wavy fin configuration has a generally V-shaped bottom portion extending away from the inner wall of the shield.
- Other and further embodiments of the present disclosure are described below.
- Embodiments of the present disclosure, briefly summarized above and discussed in greater detail below, can be understood by reference to the illustrative embodiments of the disclosure depicted in the appended drawings. However, the appended drawings illustrate only typical embodiments of the disclosure and are therefore not to be considered limiting of scope, for the disclosure may admit to other equally effective embodiments.
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FIG. 1 is a schematic cross-sectional view of a processing chamber, in accordance with some embodiments of the present disclosure. -
FIG. 2 is a sectional view of a shield, in accordance with some embodiments of the present disclosure. -
FIG. 3 is an enlarged view of the indicated area of detail ofFIG. 2 , in accordance with some embodiments of the present disclosure. -
FIG. 4 is an enlarged view of the indicated area of detail ofFIG. 2 , in accordance with some embodiments of the present disclosure. - To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.
- Methods and apparatus for improved physical vapor deposition (PVD) processing equipment are provided herein. The PVD processes may advantageously be high density plasma assisted PVD processes, such as described below. In at least some embodiments of the present disclosure, the improved methods and apparatus provide a grounded shield for a PVD processing apparatus that may advantageously lower the potential difference to the grounded shield while maintaining target to substrate spacing, thereby facilitating PVD processing with reduced or eliminated re-sputtering of the grounded shield. For example, a shield comprising an inner wall comprising an upper portion having a first wavy fin configuration and a bottom portion having a second wavy fin configuration different from the first wavy fin configuration such that a surface area of the shield is about 1000 in2 to about 1410 in2. The surface area is defined as the inner surface area of the shield (e.g., inner surface area exposed to a processing volume of a processing chamber).
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FIG. 1 is a schematic cross-sectional view of a processing chamber 100 (e.g., a substrate processing apparatus, such as a physical vapor deposition chamber) in accordance with some embodiments of the present disclosure. The specific configuration of the PVD chamber is illustrative and PVD chambers having other configurations may also benefit from modification in accordance with the teachings provided herein. Examples of suitable PVD chambers include any of the line of PVD processing chambers, commercially available from Applied Materials, Inc., of Santa Clara, California. Other processing chambers from Applied Materials, Inc. or other manufactures may also benefit from the inventive apparatus disclosed herein. - In some embodiments of the present disclosure, the
processing chamber 100 includes achamber lid 101 disposed atop achamber body 104 and removable from thechamber body 104. Thechamber lid 101 generally includes atarget assembly 102 and agrounding assembly 103. Thechamber body 104 contains asubstrate support 106 for receiving asubstrate 108 thereon. Thesubstrate support 106 is configured to support a substrate such that a center of the substrate is aligned with acentral axis 186 of theprocessing chamber 100. Thesubstrate support 106 may be located within a lowergrounded enclosure wall 110, which may be a wall of thechamber body 104. The lower groundedenclosure wall 110 may be electrically coupled to thegrounding assembly 103 of thechamber lid 101 such that an RF return path is provided to anRF power source 182 disposed above thechamber lid 101. Alternatively, other RF return paths are possible, such as those that travel from thesubstrate support 106 via a process kit shield (e.g., a grounded shield (e.g., anode) and ultimately back to thegrounding assembly 103 of thechamber lid 101. TheRF power source 182 may provide RF energy to thetarget assembly 102 as discussed below. - The
substrate support 106 has a material-receiving surface facing a principal surface of a target 114 (e.g., a cathode opposite the substrate support) and supports thesubstrate 108 to be sputter coated with material ejected from thetarget 114 in planar position opposite to the principal surface of thetarget 114. Thesubstrate support 106 may include adielectric member 105 having asubstrate processing surface 109 for supporting thesubstrate 108 thereon. In some embodiments, thesubstrate support 106 may include one or moreconductive members 107 disposed below thedielectric member 105. For example, thedielectric member 105 and the one or moreconductive members 107 may be part of an electrostatic chuck, RF electrode, or the like which may be used to provide chucking or RF power to thesubstrate support 106. - The
substrate support 106 may support thesubstrate 108 in a first volume 120 (processing volume) of thechamber body 104. Thefirst volume 120 is a portion of the inner volume of thechamber body 104 that is used for processing thesubstrate 108 and may be separated from the remainder of the inner volume (e.g., a non-processing volume) during processing of the substrate 108 (for example, via a shield 138). Thefirst volume 120 is defined as the region above thesubstrate support 106 during processing (for example, between thetarget 114 and thesubstrate support 106 when in a processing position). - In some embodiments, the
substrate support 106 may be vertically movable to allow thesubstrate 108 to be transferred onto thesubstrate support 106 through an opening (such as a slit valve, not shown) in the lower portion of thechamber body 104 and thereafter raised to a processing position. Abellows 122 connected to abottom chamber wall 124 may be provided to maintain a separation of the inner volume of thechamber body 104 from the atmosphere outside of thechamber body 104. One or more gases may be supplied from agas source 126 through amass flow controller 128 into the lower part of thechamber body 104. Anexhaust port 130 may be provided and coupled to a pump (not shown) via avalve 132 for exhausting the interior of thechamber body 104 and to facilitate maintaining a desired pressure inside thechamber body 104. - An RF
bias power source 134 may be coupled to thesubstrate support 106 in order to induce a negative DC bias on thesubstrate 108. In addition, in some embodiments, a negative DC self-bias may form on thesubstrate 108 during processing. In some embodiments, RF energy supplied by the RFbias power source 134 may range in frequency from about 2 MHz to about 60 MHz, for example, non-limiting frequencies such as 2 MHz, 13.56 MHz, or 60 MHz can be used. In other applications, thesubstrate support 106 may be grounded or left electrically floating. Alternatively or additionally, acapacitance tuner 136 may be coupled to thesubstrate support 106 for adjusting voltage on thesubstrate 108 for applications where RF bias power is not be desired. - The shield 138 (e.g., a grounded process kit shield) can be made of one or more suitable material including, but not limited to, aluminum alloy, stainless steel, and/or titanium. For example, in at least some embodiments, the
shield 138 can be made from stainless steel. Additionally, theshield 138 can be fabricated using one or more fabrication processes. For example, in at least some embodiments, theshield 138 can be fabricated using one or more conventional 3-D printing processes. Alternatively, one or more other conventional processes can be used to fabricate theshield 138. - The
shield 138 surrounds thefirst volume 120 of thechamber body 104 to protect other chamber components from damage and/or contamination from processing. In some embodiments, theshield 138 may be coupled to a ledge 140 of an uppergrounded enclosure wall 116 of thechamber body 104. In other embodiments, and as illustrated inFIG. 1 , theshield 138 may be coupled to thechamber lid 101, for example via a retaining ring (not shown). - The
shield 138 comprises aninner wall 143 disposed between thetarget 114 and thesubstrate support 106. In at least some embodiments, theinner wall 143 is provided with an innermost diameter configured to surround thetarget 114 when disposed in theprocessing chamber 100. In at least some embodiments, a ratio of a surface area of theshield 138 to a planar area of the inner diameter is about 3 to about 10. The height of theshield 138 depends upon the substrate distances 185 between thetarget 114 and thesubstrate 108. For example, in at least some embodiments, substrate distances 185 between thetarget 114 and thesubstrate 108 can be about 69 mm. The substrate distances 185 between thetarget 114 and thesubstrate 108, and correspondingly, the height of theshield 138, can be scaled based on the diameter of thesubstrate 108. In some embodiments, the ratio of the diameter of thetarget 114 to the diameter of the substrate is about 1.4. For example, a processing chamber for processing a 300 mm substrate may have atarget 114 having a diameter of about 419 mm or, in some embodiments, a processing chamber for processing a 450 mm substrate may have atarget 114 having a diameter of about 625 mm. In some embodiments, the ratio of the diameter of thetarget 114 to the height of theshield 138 is about 4.1 to about 4.3, or in some embodiments, about 4.2. For example, in some embodiments of a processing chamber for processing a 300 mm substrate, thetarget 114 may have a diameter of about 419 mm and theshield 138 may have a height of about 100 mm or, in some embodiments of a processing chamber for processing a 450 mm substrate, thetarget 114 may have a diameter of about 625 mm and theshield 138 may have a height of about 150 mm. Other diameters and heights may also be used to provide the desired ratio. In processing chambers having the ratios described above the substrate distances 185 between thetarget 114 and thesubstrate 108 is about 50.8 mm to about 152.4 mm for a 300 mm substrate or about 101.6 mm to about 203.2 mm for a 450 mm substrate. A processing chamber having the above configurations is referred to herein as a “short throw” processing chamber. - The short throw processing chamber advantageously increases the deposition rate over processing chambers having longer target to substrate distances 185. For example, for some processes, conventional processing chambers having longer target to
substrate distances 185 provide a deposition rate of about 1 to about 2 angstroms/second. In comparison, for similar processes in a short throw processing chamber, a deposition rate of about 5 to about 10 angstroms/second can be obtained while maintaining high ionization levels. In some embodiments, a processing chamber in accordance with embodiments of the present disclosure may provide a deposition rate of about 10 angstroms/second. High ionization levels at such short spacing can be obtained by providing a high pressure, for example, about 60 millitorr to about 140 millitorr, and a very high driving frequency, for example, from about 27 MHz to about 162 MHz, for example such as at about such readily commercially available frequencies as 27.12, 40.68, 60, 81.36, 100, 122, or 162.72 MHz. - Additionally, electrons have higher mobility than ions, and during their respective half cycles, both the electrodes (e.g., the cathode or powered electrode and the anode or grounded electrode) will quickly acquire electrons until the electrodes can no longer attract more of the electrons due to repulsion from accumulated electrons. During the negative half-cycle, both the electrodes will attract positive ions, however due to the lower mobility of ions, the electrodes will not neutralise all the electrons and will acquire a net negative bias relative to plasma.
- The inventors have found that if the area of both the electrodes (cathode (target) and anode (shield, wafer, dep ring, cover ring, etc.)) is comparable, then the ions created in the plasma will be attracted towards both the electrodes in equal proportions during their respective negative half-cycles, which, in turn, would lead to sputtering of material from both the electrodes in comparable proportions. However, in RF sputter-deposition, the area of the target is usually preferred to be smaller (e.g., helps to enable more deposition and less etching on the anode side) than the area of the anode (shield, wafer, dep ring, cover ring, etc.), which, in turn, can lead to a higher magnitude of negative bias and, thus higher electric field to accelerate the ions towards the target. Accordingly, depending on an area of the target (cathode) relative to the shield (anode), there will either be deposition from the target (sputter-deposition) or there will be etching (re-sputtering) of the anode (wafer, shields, dep ring, etc.).
- Re-sputtering of the
shield 138 causes undesirable contamination within theprocessing chamber 100. The re-sputtering of theshield 138 is a result of the high voltage on theshield 138. The amount of voltage that appears on the target 114 (e.g., the cathode or powered electrode) and the grounded shield 138 (e.g., the anode or grounded electrode) is dependent on the ratio of the surface area of theshield 138 to the surface area of thetarget 114, as a greater voltage appears on the smaller electrode. Sometimes the surface area of thetarget 114 can be larger than the surface area of theshield 138 resulting in a greater voltage upon theshield 138, and in turn, resulting in the undesired re-sputtering of theshield 138. For example, in some embodiments of a processing chamber for processing a 300 mm substrate, the target may have a diameter of about 419 mm with a corresponding surface area of about 138 mm2 and theshield 138 may have a height of about 100 mm with a corresponding surface area of about 132 mm2 or, in some embodiments of a processing chamber for processing a 450 mm substrate, the target may have a diameter of about 625 mm with a corresponding surface area of about 307 mm2 and theshield 138 may have a height of about 150 mm with a corresponding surface area of about 295 mm2. The inventors have observed that in some embodiments of processing chambers where the ratio of the surface area of theshield 138 to the surface area of thetarget 114 is less than 1, a greater voltage is incurred upon theshield 138, which in turn, results in the undesired re-sputtering of theshield 138. Thus, in order to advantageously minimize or prevent the re-sputtering of theshield 138, the inventors have observed that the surface area of the shield 138 (e.g., an inner surface area exposed to a processing volume of a processing chamber) needs to be greater than the surface area of thetarget 114. For example, the inventors have observed that a ratio of the surface area of theshield 138 to the surface area of thetarget 114 of about 3 to about 10 advantageously minimizes or prevents the re-sputtering of theshield 138. - Additionally, the inventors have observed that a ratio of the surface area of the
shield 138 to the surface area of thetarget 114 of about 3 to about 10 advantageously provides a relatively high negative self-biasing at thetarget 114. For example, the relatively high negative self-biasing at thetarget 114 attracts more positive plasma ions (e.g., argon ions) toward thetarget 114 during operation, which, in turn, increases target sputtering and decreases re-sputtering (e.g., etching) of theshield 138, a deposition ring (not shown), thesubstrate 108, or another component. - However, the surface area of the
shield 138 cannot be increased by simply increasing the height of theshield 138 due to the desired ratio of the diameter of thetarget 114 to the height of theshield 138, as discussed above. The inventors have observed that, in some embodiments of a processing chamber having the processing conditions discussed above (e.g., process pressures and RF frequencies used), the ratio of the surface area of theshield 138 to the height of theshield 138 must be about 2 to about 3 to advantageously minimize or prevent the re-sputtering of theshield 138. Furthermore, the diameter of theshield 138 cannot be increased sufficiently to increase the surface area of theshield 138 to prevent re-sputtering of theshield 138 due to physical constraint in the size of the processing chamber. For example, an increase in the diameter of theshield 138 of 25.4 mm results in a surface area increase of only 6%, which is insufficient to prevent the re-sputtering of theshield 138. -
FIG. 2 is a sectional view of ashield 200,FIG. 3 is an enlarged view of the indicated area of detail ofFIG. 2 , andFIG. 4 is an enlarged view of the indicated area of detail ofFIG. 2 , in accordance with some embodiments of the present disclosure. For example, as depicted inFIG. 2 , in order to obtain the desired ratio of the surface area of a shield to the surface area of a target, theshield 200, which is configured for use with theprocessing chamber 100, includes aninner wall 203 with an innermost diameter D1 configured to surround a target when disposed in theprocessing chamber 100. For example, the innermost diameter D1 can be greater than a diameter of a target. In at least some embodiments, the innermost diameter D1, which is measured from aflange 201 of theshield 200, can be about 14.5 inches to about 14.75 inches, e.g., 14.6 inches. Similarly, in at least some embodiments, an outermost diameter D2, also measured from theflange 201, can be about 16 inches to about 16.5 inches, e.g., 16.25 inches. Theflange 201 is adjacent the upper portion of theinner wall 203 and is configured to rest on or couple to a support member of theprocessing chamber 100, as described in greater detail below. Additionally, in at least some embodiments, a distance D3 from abottom surface 209 of abottom portion 207 of theshield 200 to atop surface 211 of theflange 201 is about 3 inches to about 3.5 inches, e.g., 3.25 inches. - Additionally, to achieve a larger area of anode, the
inner wall 203 comprises theupper portion 205 having a first wavy fin configuration 300 (FIG. 3 ) and thebottom portion 207 having a second wavy fin configuration 400 (FIG. 4 ) different from the firstwavy fin configuration 300. Having the wavy fin configurations as depicted inFIGS. 2-4 facilitates providing a shield with surface area of about 1000 in2 to about 1410 in2 (e.g., about 1400 in2 to about 1404 in2), thus providing a geometry that allows for deposition of highly insulating dielectric targets by increasing the negative self-bias on the target. - The
shield 138 and the firstwavy fin configuration 300 and the secondwavy fin configuration 400 can be monolithically fabricated using, for example, the 3-D printing process. Alternatively, theshield 138 can be formed using one or more fabrication processes other than the 3-D printing process and the firstwavy fin configuration 300 and the secondwavy fin configuration 400 can be fabricated using the 3-D printing process and subsequently attached to theshield 138 using one or more coupling apparatus, e.g., nuts, bolts, screws, soldering, etc. - For example, the first
wavy fin configuration 300 has a generally V-shapedbottom portion 302 that connects to theinner wall 203 and a perpendiculartop portion 304. The V-shapedbottom portion 302 and perpendiculartop portion 304 define a fin of the first wavy fin configuration that extends along theinner wall 203. In at least some embodiments, the firstwavy fin configuration 300 has a diameter D4, which is measured from the perpendiculartop portion 304, of about 14 inches to about 14.50 inches, e.g., 14.25 inches, and a diameter D5, which is measured where the V-shapedbottom portion 302 connects to theinner wall 203, of about 15 inches to about 15.25 inches, e.g., 15.15 inches, seeFIG. 2 for example. - The
inner wall 203 of theshield 200 can have one or more fins of the firstwavy fin configuration 300 disposed therealong. For example, in the illustrated embodiment, theinner wall 203 is shown comprising two (upper and lower) fins that are vertically aligned with each other. Each of the two fins can be substantially identical to each other. For example, an upper fin and a lower fin of the firstwavy fin configuration 300 can have an identical perpendiculartop portion 304 and a different V-shapedbottom portion 302 to facilitate fabricating the firstwavy fin configuration 300. For example, in at least some embodiments, the upper fin of the of the firstwavy fin configuration 300 can have anextension 306 that connects to theinner wall 203 and the lower fin of the of the firstwavy fin configuration 300 can have a V-shapedbottom portion 302 that directly connects to the inner wall 203 (seeFIG. 3 for example). - The second
wavy fin configuration 400 has a plurality of fins having a generallysinusoidal configuration 401 with alternating generally V-shaped ends 402. The generally V-shaped ends 402 can have the same general configuration. For example, in the illustrated embodiment, the generally V-shaped ends 402 can comprise two diverging ends. For example, the generally V-shaped ends 402 can comprise afirst portion 404 extending toward theinner wall 203 and a second portion 406 extending away from theinner wall 203. Thefirst portion 404 and the second portion 406 can have the same length or different lengths. For example, in the illustrated embodiment, a V-shaped end disposed closest to where theshield 200 connects to a cover ring of theprocessing chamber 100 can have thefirst portion 404 and the second portion 406 with the same length and the remaining V-shaped ends can have thefirst portion 404 and the second portion 406 with different lengths. - The second
wavy fin configuration 400 can have a continuous or non-continuous configuration. For example, in at least some embodiments, the secondwavy fin configuration 400 has a non-continuous configuration. For example, anannular groove 408 can extend along the generallysinusoidal configuration 401 of the secondwavy fin configuration 400. Theannular groove 408 can have one or more suitable shapes, e.g., curved, straight, etc. For example, theannular groove 408 can have a generally diamond or triangular shape. In at least some embodiments, the annular groove can have a plurality of diamond shape cut-outs. - A distance D6 from the
bottom surface 209 of theshield 200 to a top portion of a fin without the V-shaped end can be about 1.6 inches. Similarly, a distance D7 from thebottom surface 209 of theshield 200 to a top portion of a fin with the V-shaped end can be about 1.8 inches. - A thickness T1 of each fin of the first
wavy fin configuration 300 and the secondwavy fin configuration 400 of about .08 inches. A gap G1 between each of fin of the firstwavy fin configuration 300 and the secondwavy fin configuration 400 can be about 0.175 inches. - The inventors have found that providing the distances D1-D7, thickness and gap G1 as described herein diminishes, if not eliminates, a cavity effect that is, typically, associated with conventional shield assemblies. That is, by providing each fin of the first
wavy fin configuration 300 and the secondwavy fin configuration 400 with the described herein dimensions essentially hides the shield (anode) from a line of sight of deposition from the target. - Returning to
FIG. 1 , thechamber lid 101 rests on theledge 140 of the upper groundedenclosure wall 116. Similar to the lower groundedenclosure wall 110, the upper groundedenclosure wall 116 may provide a portion of the RF return path between the upper groundedenclosure wall 116 and thegrounding assembly 103 of thechamber lid 101. However, other RF return paths are possible, such as via the groundedshield 138. - As discussed above, the
shield 138 extends downwardly and may include one or more sidewalls configured to surround thefirst volume 120. Theshield 138 extends along, but is spaced apart from, the walls of the upper groundedenclosure wall 116 and the lower groundedenclosure wall 110 downwardly to below a top surface of thesubstrate support 106 and returns upwardly until reaching a top surface of the substrate support 106 (e.g., forming a u-shaped portion at the bottom of the shield 138). - A first ring 148 (e.g., a cover ring) rests on the top of the u-shaped portion (e.g., a first position of the first ring 148) when the
substrate support 106 is in its lower, loading position (not shown) but rests on the outer periphery of the substrate support 106 (e.g., a second position of the first ring 148) when thesubstrate support 106 is in its upper, deposition position (as illustrated inFIG. 1 ) to protect thesubstrate support 106 from sputter deposition. - An additional
dielectric ring 111 may be used to shield the periphery of thesubstrate 108 from deposition. For example, the additionaldielectric ring 111 may be disposed about a peripheral edge of thesubstrate support 106 and adjacent to thesubstrate processing surface 109, as illustrated inFIG. 1 . - The
first ring 148 may include protrusions extending from a lower surface of thefirst ring 148 on either side of the inner upwardly extending u-shaped portion of the bottom of theshield 138. An innermost protrusion may be configured to interface with thesubstrate support 106 to align thefirst ring 148 with respect to theshield 138 when thefirst ring 148 is moved into the second position as the substrate support is moved into the processing position. For example, a substrate support facing surface of the innermost protrusion may be tapered, notched or the like to rest in/on a corresponding surface on thesubstrate support 106 when thefirst ring 148 is in the second position. - In some embodiments, a
magnet 152 may be disposed about thechamber body 104 for selectively providing a magnetic field between thesubstrate support 106 and thetarget 114. For example, as shown inFIG. 1 , themagnet 152 may be disposed about the outside of theenclosure wall 110 in a region just above thesubstrate support 106 when in processing position. In some embodiments, themagnet 152 may be disposed additionally or alternatively in other locations, such as adjacent the upper groundedenclosure wall 116. Themagnet 152 may be an electromagnet and may be coupled to a power source (not shown) for controlling the magnitude of the magnetic field generated by the electromagnet. - The
chamber lid 101 generally includes thegrounding assembly 103 disposed about thetarget assembly 102. Thegrounding assembly 103 may include agrounding plate 156 having afirst surface 157 that may be generally parallel to and opposite a backside of thetarget assembly 102. Agrounding shield 112 may extend from thefirst surface 157 of thegrounding plate 156 and surround thetarget assembly 102. Thegrounding assembly 103 may include asupport member 175 to support thetarget assembly 102 within thegrounding assembly 103. - In some embodiments, the
support member 175 may be coupled to a lower end of thegrounding shield 112 proximate an outer peripheral edge of thesupport member 175 and extends radially inward to support aseal ring 181, thetarget assembly 102 and optionally, a dark space shield (e.g., that may be disposed between theshield 138 and thetarget assembly 102, not shown). Theseal ring 181 may be a ring or other annular shape having a desired cross-section to facilitate interfacing with thetarget assembly 102 and with thesupport member 175. Theseal ring 181 may be made of a dielectric material, such as ceramic. Theseal ring 181 may insulate thetarget assembly 102 from theground assembly 103. - The
support member 175 may be a generally planar member having a central opening to accommodate theshield 138 and thetarget 114. In some embodiments, thesupport member 175 may be circular, or disc-like in shape, although the shape may vary depending upon the corresponding shape of the chamber lid and/or the shape of the substrate to be processed in theprocessing chamber 100. In use, when thechamber lid 101 is opened or closed, thesupport member 175 maintains theshield 138 in proper alignment with respect to thetarget 114, thereby minimizing the risk of misalignment due to chamber assembly or opening and closing thechamber lid 101. - The
target assembly 102 may include asource distribution plate 158 opposing a backside of thetarget 114 and electrically coupled to thetarget 114 along a peripheral edge of thetarget 114. Thetarget 114 may comprise asource material 113 to be deposited on a substrate, such as thesubstrate 108 during sputtering, such as a metal, metal oxide, metal alloy, magnetic material, or the like. In some embodiments, thetarget 114 may include abacking plate 162 to support thesource material 113. Thebacking plate 162 may comprise a conductive material, such as copper-zinc, copper-chrome, or the same material as the target, such that RF, and optionally DC, power can be coupled to thesource material 113 via thebacking plate 162. Alternatively, thebacking plate 162 may be non-conductive and may include conductive elements (not shown) such as electrical feedthroughs or the like. - A
conductive member 164 may be disposed between the source distribution plate and the backside of thetarget 114 to propagate RF energy from the source distribution plate to the peripheral edge of thetarget 114. Theconductive member 164 may be cylindrical and tubular, with afirst end 166 coupled to a target-facing surface of thesource distribution plate 158 proximate the peripheral edge of thesource distribution plate 158 and asecond end 168 coupled to a source distribution plate-facing surface of thetarget 114 proximate the peripheral edge of thetarget 114. In some embodiments, thesecond end 168 is coupled to a source distribution plate facing surface of thebacking plate 162 proximate the peripheral edge of thebacking plate 162. - The
target assembly 102 may include acavity 170 disposed between the backside of thetarget 114 and thesource distribution plate 158. Thecavity 170 may at least partially house amagnetron assembly 196. Thecavity 170 is at least partially defined by the inner surface of theconductive member 164, a target facing surface of thesource distribution plate 158, and a source distribution plate facing surface (e.g., backside) of the target 114 (or backing plate 162). In some embodiments, thecavity 170 may be at least partially filled with a cooling fluid, such as water (H2O) or the like. In some embodiments, a divider (not shown) may be provided to contain the cooling fluid in a desired portion of the cavity 170 (such as a lower portion, as shown) and to prevent the cooling fluid from reaching components disposed on the other side of the divider. - An
insulative gap 180 is provided between the groundingplate 156 and the outer surfaces of thesource distribution plate 158, theconductive member 164, and the target 114 (and/or backing plate 162). Theinsulative gap 180 may be filled with air or some other suitable dielectric material, such as a ceramic, a plastic, or the like. The distance between the groundingplate 156 and thesource distribution plate 158 depends on the dielectric material between the groundingplate 156 and thesource distribution plate 158. Where the dielectric material is predominantly air, the distance between the groundingplate 156 and thesource distribution plate 158 should be between about 5 to about 40 mm. - The
grounding assembly 103 and thetarget assembly 102 may be electrically separated by theseal ring 181 and by one or more ofinsulators 160 disposed between thefirst surface 157 of thegrounding plate 156 and the backside of thetarget assembly 102, e.g., a non-target facing side of thesource distribution plate 158. - The
target assembly 102 has theRF power source 182 connected to an electrode 154 (e.g., a RF feed structure). TheRF power source 182 may include an RF generator and a matching circuit, for example, to minimize reflected RF energy reflected back to the RF generator during operation. For example, RF energy supplied by theRF power source 182 may range in frequency from about 13.56 MHz and to about 162 MHz or above. For example, non-limiting frequencies such as 13.56 MHz, 27.12 MHz, 60 MHz, or 162 MHz can be used. - In some embodiments, a
second energy source 183 may be coupled to thetarget assembly 102 to provide additional energy to thetarget 114 during processing. In some embodiments, thesecond energy source 183 may be a DC power source to provide DC energy, for example, to enhance a sputtering rate of the target material (and hence, a deposition rate on the substrate). In some embodiments, thesecond energy source 183 may be a second RF power source, similar to theRF power source 182, to provide RF energy, for example, at a second frequency different than a first frequency of RF energy provided by theRF power source 182. In embodiments where thesecond energy source 183 is a DC power source, the second energy source may be coupled to thetarget assembly 102 in any location suitable to electrically couple the DC energy to thetarget 114, such as theelectrode 154 or some other conductive member (such as the source distribution plate 158). In embodiments where thesecond energy source 183 is a second RF power source, the second energy source may be coupled to thetarget assembly 102 via theelectrode 154. - The
electrode 154 may be cylindrical or otherwise rod-like and may be aligned with acentral axis 186 of the processing chamber 100 (e.g., theelectrode 154 may be coupled to the target assembly at a point coincident with a central axis of the target, which is coincident with the central axis 186). Theelectrode 154, aligned with thecentral axis 186 of theprocessing chamber 100, facilitates applying RF energy from theRF power source 182 to thetarget 114 in an asymmetrical manner (e.g., theelectrode 154 may couple RF energy to the target at a “single point” aligned with the central axis of the PVD chamber). The central position of theelectrode 154 helps to eliminate or reduce deposition asymmetry in substrate deposition processes. Theelectrode 154 may have any suitable diameter, however, the smaller the diameter of theelectrode 154, the closer the RF energy application approaches a true single point. For example, although other diameters may be used, in some embodiments, the diameter of theelectrode 154 may be about 0.5 to about 2 inches. Theelectrode 154 may generally have any suitable length depending upon the configuration of the PVD chamber. In some embodiments, the electrode may have a length of between about 0.5 to about 12 inches. Theelectrode 154 may be fabricated from any suitable conductive material, such as aluminum, copper, silver, or the like. - The
electrode 154 may pass through an opening in thegrounding plate 156 and is coupled to asource distribution plate 158. Thegrounding plate 156 may comprise any suitable conductive material, such as aluminum, copper, or the like. Open spaces between the one ormore insulators 160 allow for RF wave propagation along the surface of thesource distribution plate 158. In some embodiments, the one ormore insulators 160 may be symmetrically positioned with respect to thecentral axis 186 of theprocessing chamber 100 Such positioning may facilitate symmetric RF wave propagation along the surface of thesource distribution plate 158 and, ultimately, to atarget 114 coupled to thesource distribution plate 158. The RF energy may be provided in a more symmetric and uniform manner as compared to conventional PVD chambers due, at least in part, to the central position of theelectrode 154. - One or more portions of a
magnetron assembly 196 may be disposed at least partially within thecavity 170. The magnetron assembly provides a rotating magnetic field proximate the target to assist in plasma processing within the processing chamber104. In some embodiments, themagnetron assembly 196 may include amotor 176, amotor shaft 174, agear box 178, agear box shaft 184, and a rotatable magnet (e.g., a plurality ofmagnets 188 coupled to a magnet support member 172). - The
magnetron assembly 196 is rotated within thecavity 170. For example, in some embodiments, themotor 176,motor shaft 174,gear box 178, andgear box shaft 184 may be provided to rotate themagnet support member 172. In some embodiments (not shown), the magnetron drive shaft may be disposed along the central axis of the chamber, with the RF energy coupled to the target assembly at a different location or in a different manner. As illustrated inFIG. 1 , in some embodiments, themotor shaft 174 of the magnetron may be disposed through an off-center opening in thegrounding plate 156. The end of themotor shaft 174 protruding from thegrounding plate 156 is coupled to amotor 176. Themotor shaft 174 is further disposed through a corresponding off-center opening through the source distribution plate 158 (e.g., a first opening 146) and coupled to agear box 178. In some embodiments, one or moresecond openings 198 may be disposed though thesource distribution plate 158 in a symmetrical relationship to thefirst opening 146 to advantageously maintain axisymmetric RF distribution along thesource distribution plate 158. The one or moresecond openings 198 may also be used to allow access to thecavity 170 for items such as sensors or the like. - The
gear box 178 may be supported by any suitable means, such as by being coupled to a bottom surface of thesource distribution plate 158. Thegear box 178 may be insulated from thesource distribution plate 158 by fabricating at least the upper surface of thegear box 178 from a dielectric material, or by interposing aninsulator layer 190 between thegear box 178 and thesource distribution plate 158, or the like. Thegear box 178 is further coupled to themagnet support member 172 via thegear box shaft 184 to transfer the rotational motion provided by themotor 176 to the magnet support member 172 (and hence, the plurality of magnets 188). Thegear box shaft 184 may advantageously be coincident with thecentral axis 186 of theprocessing chamber 100. - The
magnet support member 172 may be constructed from any material suitable to provide adequate mechanical strength to rigidly support the plurality ofmagnets 188. The plurality ofmagnets 188 may be configured in any manner to provide a magnetic field having a desired shape and strength to provide a more uniform full-face erosion of the target as described herein. - Alternatively, the
magnet support member 172 may be rotated by any other means with sufficient torque to overcome the drag caused on themagnet support member 172 and attached plurality ofmagnets 188, for example due to the cooling fluid, when present, in thecavity 170. - While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof.
Claims (21)
1. A process kit for use in a physical vapor deposition chamber, comprising:
a shield comprising an inner wall comprising an upper portion having a first wavy fin configuration and a bottom portion having a second wavy fin configuration different from the first wavy fin configuration such that a surface area of the shield is about 1400 in2 to about 1410 in 2,
wherein the second wavy fin configuration has a generally sinusoidal configuration with alternating generally V-shaped ends.
2. The process kit of claim 1 , wherein the shield is made of at least one of an aluminum alloy, stainless steel, or titanium.
3. The process kit of claim 1 , wherein the shield is manufactured using a 3-D printing process.
4. The process kit of claim 1 , further comprising a flange disposed adjacent the upper portion and having an inner diameter of about 14.5 inches to about 14.75 inches and an outer diameter of about 16 inches to about 16.5 inches.
5. The process kit of claim 4 , wherein a distance from a bottom surface of the bottom portion to a top surface of the flange is about 3 inches to about 3.5 inches.
6. The process kit of claim 1 , wherein the first wavy fin configuration has a diameter of about 14 inches.
7. The process kit of claim 1 , wherein a thickness of each of fin of the first wavy fin configuration and the second wavy fin configuration is about 0.08 inches.
8. The process kit of claim 1 , wherein a gap between each of fin of the first wavy fin configuration and the second wavy fin configuration is about 0.175 inches.
9. (canceled)
10. The process kit of claim 1 , wherein an annular groove extends along the generally sinusoidal configuration of the second wavy fin configuration.
11. The process kit of claim 1 , wherein the first wavy fin configuration has a generally V-shaped bottom portion and a perpendicular top portion.
12. A substrate processing apparatus, comprising:
a chamber body having a substrate support disposed therein;
a target coupled to the chamber body opposite the substrate support;
an RF power source to form a plasma within the chamber body; and
a shield comprising an inner wall comprising an upper portion having a first wavy fin configuration and a bottom portion having a second wavy fin configuration different from the first wavy fin configuration such that a surface area of the shield is about 1400 in2 to about 1410 in2,
wherein the second wavy fin configuration has a generally sinusoidal configuration with alternating generally V-shaped ends.
13. The substrate processing apparatus of claim 12 , wherein the shield is made of at least one of an aluminum alloy, stainless steel, or titanium.
14. The substrate processing apparatus of claim 12 wherein the shield is manufactured using a 3-D printing process.
15. The substrate processing apparatus of claim 12 , further comprising a flange disposed adjacent the upper portion and having an inner diameter of about 14.5 inches to about 14.75 inches and an outer diameter of about 16 inches to about 16.5 inches.
16. The substrate processing apparatus of claim 15 , wherein a distance from a bottom surface of the bottom portion to a top surface of the flange is about 3 inches to about 3.5 inches.
17. The substrate processing apparatus of claim 12 , wherein the first wavy fin configuration has a diameter of about 14 inches.
18. The substrate processing apparatus of claim 12 , wherein a thickness of each of fin of the first wavy fin configuration and the second wavy fin configuration is about 0.08 inches.
19. The substrate processing apparatus of claim 12 , wherein a gap between each of fin of the first wavy fin configuration and the second wavy fin configuration is about 0.175 inches.
20. A process kit for use in a physical vapor deposition chamber, comprising:
a shield comprising an inner wall comprising an upper portion having a first wavy fin configuration and a bottom portion having a second wavy fin configuration different from the first wavy fin configuration such that a surface area of the shield is about 1400 in2 to about 1410 in2,
wherein the second wavy fin configuration has a non-continuous generally sinusoidal configuration, and
wherein the first wavy fin configuration has a generally V-shaped bottom portion extending away from the inner wall of the shield,
wherein the first wavy fin configuration has a generally V-shaped bottom portion and a perpendicular top portion.
21. A substrate processing apparatus, comprising:
a chamber body having a substrate support disposed therein;
a target coupled to the chamber body opposite the substrate support;
an RF power source to form a plasma within the chamber body; and
a shield comprising an inner wall comprising an upper portion having a first wavy fin configuration and a bottom portion having a second wavy fin configuration different from the first wavy fin configuration such that a surface area of the shield is about 1400 in2 to about 1410 in2,
wherein the first wavy fin configuration has a generally V-shaped bottom portion and a perpendicular top portion.
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US17/327,955 US11508563B1 (en) | 2021-05-24 | 2021-05-24 | Methods and apparatus for processing a substrate using improved shield configurations |
US17/714,502 US11621152B2 (en) | 2021-05-24 | 2022-04-06 | Methods and apparatus for processing a substrate using improved shield configurations |
PCT/US2022/027222 WO2022250879A1 (en) | 2021-05-24 | 2022-05-02 | Methods and apparatus for processing a substrate using improved shield configurations |
TW111119057A TW202302894A (en) | 2021-05-24 | 2022-05-23 | Methods and apparatus for processing a substrate using improved shield configurations |
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US17/327,955 US11508563B1 (en) | 2021-05-24 | 2021-05-24 | Methods and apparatus for processing a substrate using improved shield configurations |
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US5512102A (en) * | 1985-10-14 | 1996-04-30 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
JP2671835B2 (en) | 1994-10-20 | 1997-11-05 | 日本電気株式会社 | Sputtering apparatus and method for manufacturing semiconductor device using the apparatus |
KR20010054515A (en) | 1999-12-07 | 2001-07-02 | 윤종용 | shield structure for sputtering apparatus |
US8475636B2 (en) | 2008-11-07 | 2013-07-02 | Novellus Systems, Inc. | Method and apparatus for electroplating |
US7182816B2 (en) * | 2003-08-18 | 2007-02-27 | Tokyo Electron Limited | Particulate reduction using temperature-controlled chamber shield |
US20060005767A1 (en) | 2004-06-28 | 2006-01-12 | Applied Materials, Inc. | Chamber component having knurled surface |
JP2006101480A (en) * | 2004-07-12 | 2006-04-13 | Applied Materials Inc | Apparatus and method for fixed impedance conversion circuit network used together with plasma chamber |
US8066857B2 (en) * | 2008-12-12 | 2011-11-29 | Fujifilm Corporation | Shaped anode and anode-shield connection for vacuum physical vapor deposition |
CN102265375B (en) | 2008-12-23 | 2014-12-24 | 欧瑞康先进科技股份有限公司 | RF sputtering arrangement |
US10692706B2 (en) | 2013-03-12 | 2020-06-23 | Applied Materials, Inc. | Methods and apparatus for reducing sputtering of a grounded shield in a process chamber |
US11114289B2 (en) * | 2016-04-27 | 2021-09-07 | Applied Materials, Inc. | Non-disappearing anode for use with dielectric deposition |
WO2020046567A1 (en) | 2018-08-29 | 2020-03-05 | Applied Materials, Inc. | Chamber injector |
US11508563B1 (en) * | 2021-05-24 | 2022-11-22 | Applied Materials, Inc. | Methods and apparatus for processing a substrate using improved shield configurations |
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