CN109300764A - Reaction chamber and semiconductor processing equipment - Google Patents
Reaction chamber and semiconductor processing equipment Download PDFInfo
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- CN109300764A CN109300764A CN201811292310.XA CN201811292310A CN109300764A CN 109300764 A CN109300764 A CN 109300764A CN 201811292310 A CN201811292310 A CN 201811292310A CN 109300764 A CN109300764 A CN 109300764A
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- depth
- width ratio
- reaction chamber
- liner
- collimator
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
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- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Present disclose provides a kind of reaction chambers, comprising: pedestal, for carrying workpiece to be processed；Target is arranged in the upper space of the reaction chamber；And collimator, the target or less is set, in the space more than workpiece to be processed, to improve the coverage rate of the workpiece to be processed deep hole bottom and the symmetry of deep hole sidewall coverage.The disclosure additionally provides a kind of semiconductor processing equipment.
Description
Technical field
This disclosure relates to technical field of manufacturing semiconductors more particularly to a kind of reaction chamber and semiconductor processing equipment.
Background technique
Magnetron sputtering physical vapour deposition (PVD) is the method being widely used in field of semiconductor manufacture.Existing magnetron sputtering object
Physical vapor deposition equipment is as shown in Figure 1, have the reaction chamber 1 of ground connection.Pedestal 8 is located in reaction chamber 1, carries work to be processed
Part 10.Snap ring 9 is placed in 10 surrounding of workpiece to be processed.Target 4 seals reaction chamber 1.Support component 2 and target 4 form sealing
Cavity is filled with deionized water 3.When technique, driving device 6 drives magnetron 5 to scan 4 surface of target, and magnetron 5 can be in target
The central area of material 4 and fringe region back through.Driving source 12 is biased to target 4, makes it relative to reaction chamber 1
Negative pressure, excitation process gas generates plasma, and positively charged plasma is attracted to target 4.When the energy of plasma
When measuring sufficiently high, metallic atom evolution target material surface can be made and be deposited on workpiece to be processed 10.Liner is set in reaction chamber 1
7, to prevent cavity wall contaminated.For the film coverage for improving workpiece to be processed deep hole, applied by radio-frequency power supply 11 to pedestal 8
Radio-frequency power.
In technical process, since magnetron 5 can be more than by central region by the number of target intermediate region
With the number of fringe region, the film being deposited on workpiece to be processed is caused to be unevenly distributed.On the other hand, since target escapes
Metallic atom lack good directionality, for the deep hole of deep hole especially its fringe region of workpiece to be processed, only portion
The metallic atom in point direction can be deposited on deep hole side wall, affect the coverage rate of deep hole side wall, and part deep hole side wall is more
It is difficult to be caused the symmetry of deep hole sidewall coverage poor by metal ion deposition.Especially close to the sidewall locations of deep hole bottom,
Since the position depth-to-width ratio is higher, cause the film deposition effect of the position unsatisfactory.
Summary of the invention
According to one aspect of the disclosure, a kind of reaction chamber is provided, comprising: pedestal, for carrying workpiece to be processed；
Target is arranged in the upper space of the reaction chamber；And collimator, it is arranged below the target, the work to be processed
In space more than part, with improve the workpiece to be processed deep hole bottom coverage rate and deep hole sidewall coverage it is symmetrical
Property.
In some embodiments of the present disclosure, the collimator includes central area, intermediate region and fringe region；It is described
Central area, the intermediate region, the fringe region include multiple through-holes extended along the reaction chamber sidewall direction,
The depth-to-width ratio of through-hole is center depth-to-width ratio in the central area, and the depth-to-width ratio of the through-hole in the intermediate region is intermediate deep
Wide ratio, the depth-to-width ratio of the through-hole in the fringe region are edge depth-to-width ratio；Wherein, the intermediate depth-to-width ratio is greater than in described
At least one of heart depth-to-width ratio and the edge depth-to-width ratio.
In some embodiments of the present disclosure, the intermediate depth-to-width ratio is greater than the center depth-to-width ratio, described intermediate deep wide
Than being greater than the edge depth-to-width ratio.
In some embodiments of the present disclosure, the center depth-to-width ratio is identical as the edge depth-to-width ratio.
In some embodiments of the present disclosure, the intermediate depth-to-width ratio is deeper than the center depth-to-width ratio and/or the edge
It is wide than big by 15% or more.
In some embodiments of the present disclosure, the ratio of the center depth-to-width ratio and the edge depth-to-width ratio is greater than 2.
In some embodiments of the present disclosure, the central area, the intermediate region, the fringe region are with identical
Via area, and the via depth of the intermediate region is greater than the via depth of the central area and the fringe region.
In some embodiments of the present disclosure, the central area, the intermediate region, the fringe region are with identical
Via depth, and the via area of the intermediate region is less than the via area of the central area and the fringe region.
In some embodiments of the present disclosure, the reaction chamber further include: coil, around be coupled in the collimator with
The chamber side wall between the pedestal, wherein the coil is coupled to radio-frequency power supply.
In some embodiments of the present disclosure, the reaction chamber further include: upper liner, the upper liner is the chamber side
A part of wall, and the collimator is coupled to the upper liner；And faraday's liner, faraday's liner are also the chamber
A part of side wall, between the upper liner and the pedestal, and the coil is arranged on the outside of faraday's liner.
In some embodiments of the present disclosure, faraday's liner, which suspends, to be arranged.
In some embodiments of the present disclosure, lining is provided at least one and cracks in the faraday, the edge of cracking
Faraday's liner is axially arranged.
In some embodiments of the present disclosure, the width that cracks is less than 10mm.
In some embodiments of the present disclosure, the projection of the central area and the fringe region in reaction chamber cross section
The sum of area accounts for the collimator 60% or more of the reaction chamber cross sectional planes projection gross area.
In some embodiments of the present disclosure, the material of the collimator is aluminium or stainless steel.
A kind of semiconductor processing equipment another aspect of the present disclosure provides, including it is described in any of the above embodiments
Reaction chamber.
By the way that collimator is arranged, the film covering of the film deposition uniformity, deep hole bottom of workpiece to be processed can be improved
The symmetry of rate and deep hole sidewall coverage, and film growth can be more precisely controlled in thin film deposition processes.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the magnetron sputtering Pvd equipment of the prior art；
Fig. 2 is the structural schematic diagram of the reaction chamber of one embodiment of the disclosure；
Fig. 3 is perspective view of the collimator of one embodiment of the disclosure on the face XY；
Fig. 4 is the top view of the collimator of one embodiment of the disclosure；
Fig. 5 is the structural schematic diagram of faraday's liner of one embodiment of the disclosure；
Fig. 6 is the schematic diagram of the second plasma bombardment deep hole bottom of one embodiment of the disclosure.
Symbol description
[prior art]
1- chamber body；2- support component；3- deionized water；4- target；5- magnetron；6- driving device；7- liner；8-
Pedestal；9- snap ring；10- workpiece to be processed；11- radio-frequency power supply；12- driving source.
[disclosure]
1- chamber body；11- side wall；12- bottom wall；111- upper shell；112- middle cylinder；113- lower shell；On 131-
Liner；132- faraday's liner；133- lower liner；1321- cracks；14,15- adapter；16- insulated column；
2- pedestal；21- pressure ring；22- radio-frequency power supply；
3- target；
4- collimator；The central area 41-；The intermediate region 42-；43- fringe region；44- through-hole；
5- top electrode assembly；501- magnetron；502- driving device；503- support component；504- plasma excitation source；
505- deionized water；
6- coil；
7- radio-frequency power supply；
X- workpiece to be processed；
The second plasma of 101-；102- metal.
Specific embodiment
For the purposes, technical schemes and advantages of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
Attached drawing is described in further detail the disclosure.
One embodiment of the disclosure provides a kind of reaction chamber, as shown in Fig. 2, reaction chamber includes: chamber body 1, base
Seat 2, target 3 and collimator 4.
Pedestal 2 is set to the lower space of reaction chamber, specifically can be the bottom that chamber body 1 is arranged in, for holding
Workpiece to be processed X is carried, and radio-frequency power is applied by radio-frequency power supply 22.The surrounding of workpiece to be processed X is additionally provided with pressure ring 21, uses
In the position of fixed workpiece to be processed X on the base 2.
Target 3 is arranged in the upper space of reaction chamber, specifically can be the top that chamber body 1 is arranged in.
Collimator 4 is arranged in the space of 3 or less target, workpiece to be processed X or more, using metals such as Al or stainless steels
Material is made.
Top electrode assembly 5 has can be set in reaction chamber top, and top electrode assembly 5 includes: magnetron 501, driving device
502, support component 503 and plasma excitation source 504.
Target 3 is fixed in 503 bottom end of support component, and the lower surface of target 3 is exposed in the space of reaction cavity.Support component
503 and target 3 form the sealed chamber for being suitable for accommodating deionized water 505, deionized water 505 is for cooling down target 3.Magnetic
Keyholed back plate 501 is located in the sealed chamber, and connects the driving device 502 outside sealed chamber.Magnetron 501 is in driving device 502
Driving under scan target 3, to generate magnetic field near 3 surface of target.In technical process, plasma excitation source 504 is applied
It is biased to target 3, so that it is formed negative pressure relative to the chamber body 1 of ground connection, makes the process gas of such as argon gas in reaction chamber
Body discharges and generates argon ion and electronics.Magnetic field caused by magnetron 501 can extend the motion profile of electronics, electron motion
It constantly collides in the process with ar atmo, ionizes out a large amount of argon ion, the ionization level of target can be increased.Positively charged argon from
Son is attracted at the target 3 of back bias voltage.When the energy of argon ion is sufficiently high, target 3 is hit, metallic atom can be made to escape target
3 surface of material and moving downward is deposited on workpiece to be processed X.
In conjunction with shown in Fig. 2 and 3, the collimator 4 of the present embodiment is set in chamber body 1 and close 1 top of chamber body,
And each region of collimator 4 has different depth-to-width ratios.Collimator 4 and chamber body 1 are coaxial, are with 4 axis of collimator
Center is divided into three regions: central area 41, intermediate region 42 and fringe region 43 from the center to edge.Central area
41 cylindrical region to take 4 axis of collimator as its axis, intermediate region 42 and fringe region 43 are successively to be coated on center
Cylindrical region outside region 41, intermediate region 42 is between central area 41 and fringe region 43.
Chamber body 1 includes side wall 11 and bottom wall 12.In conjunction with shown in Fig. 2 and Fig. 4, central area 41, intermediate region 42, side
Edge region 43 includes multiple through-holes 44 extended along sidewall direction, wherein sidewall direction refers to Z-direction shown in Fig. 2.Through-hole
44 cross sectional shape without limitation, such as can be the shapes such as polygon or round.In Fig. 4, the section of through-hole 44 is positive six
Side shape, collimator 4 are in honeycomb structure.The depth-to-width ratio of multiple through-holes 44 in the same area be it is identical, depth-to-width ratio is
Refer to that the depth of through-hole 44 and the ratio of width D, depth refer to that the length along sidewall direction, width D refer to perpendicular to sidewall direction
Length.
The depth-to-width ratio of through-hole 44 is known as center depth-to-width ratio in central area 41, the deep width of the through-hole 44 in intermediate region 42
Than being known as intermediate depth-to-width ratio, the depth-to-width ratio of the through-hole 44 in fringe region 43 is known as edge depth-to-width ratio.It is deep among the present embodiment
Width is than being greater than center depth-to-width ratio, and intermediate depth-to-width ratio is greater than edge depth-to-width ratio, i.e., intermediate depth-to-width ratio had not only been greater than center depth-to-width ratio, but also
Greater than edge depth-to-width ratio.Center depth-to-width ratio is identical as edge depth-to-width ratio numerical value, i.e. central area and fringe region is having the same
Depth-to-width ratio, and intermediate depth-to-width ratio is bigger by 15% or more than center depth-to-width ratio and edge depth-to-width ratio, and center depth-to-width ratio and edge are deep
The ratio of wide ratio is all larger than 2.
The central area 41 of the collimator 4 of the present embodiment, intermediate region 42 and fringe region 43 and target 3 center
Domain, intermediate region and fringe region respectively correspond.In technical process, since the depth-to-width ratio of collimator intermediate region 42 is larger,
When the metallic atom that 3 intermediate region of target generates passes through collimator 4, has more metallic atoms and be deposited in collimator 4.
Although the metallic atom of 3 intermediate region of target generation in this way is more than its central area and fringe region, among collimator
Metallic atom quantity and its central area 41 that region 42 comes out and fringe region 43 it is essentially identical, do not have significant difference.
Collimator 4 is equivalent to a filter, plays a role in filtering, to reduce the deposition velocity in section among workpiece to be processed X, subtracts
The film thickness of small workpiece to be processed intermediate region improves the uniformity of film deposition.
Meanwhile by be arranged collimator 4, make metallic atom after collimator 4 have good directionality, be incident on to
The metallic atom of workpieces processing X also has good directionality, so that metallic atom is easier to deposit to workpiece to be processed depth
Hole bottom, and more uniformly deposit to the two side walls of deep hole, to improve the film coverage and depth of deep hole bottom
The symmetry of hole sidewall coverage.The metallic atom that collimator 4 generates each region of target 3 carries out different degrees of filtering, rises
To the effect for reducing deposition rate, film growth can be more precisely controlled in thinner thin film deposition processes.Collimator 4
Also increase the back bias voltage of pedestal 2, is conducive to improve film coverage.
In the present embodiment, central area 41, intermediate region 42, fringe region 43 can have identical via area,
That is the cross-sectional area of the through-hole 44 of each region is equal.In this case, the depth of the through-hole 44 of intermediate region 42 should be big
In central area 41 and the depth of the through-hole 44 of fringe region 43, wherein the through-hole 44 of central area 41 and fringe region 43 is deep
Degree is 50mm or more.Central area 41, intermediate region 42, fringe region 43 also can have identical via depth.?
In this case, the via area of intermediate region 42 should be less than the via area of central area 41 and fringe region 43.Collimator
Central area 41, intermediate region 42 and fringe region 43 size can be arranged according to the size of target corresponding region, but in
The sum of the projected area on reaction chamber cross section (X/Y plane in Fig. 2) of heart district domain 41 and fringe region 43 should account for entire standard
Straight device 4 projects 60% or more of the gross area in reaction chamber cross section.
Only exemplary illustration, the present embodiment are not limited to this above.For example, intermediate depth-to-width ratio can be greater than the deep width in center
Than with one of them in edge depth-to-width ratio, and intermediate depth-to-width ratio is bigger by 15% or more than center depth-to-width ratio or edge depth-to-width ratio, this
Sample can also play the symmetrical of the uniformity of raising film deposition, the film coverage of deep hole bottom and deep hole sidewall coverage
The effect of property.In addition, when intermediate depth-to-width ratio is greater than center depth-to-width ratio and edge depth-to-width ratio, center depth-to-width ratio and edge depth-to-width ratio
Numerical value can also be different, but still it is bigger by 15% or more than center depth-to-width ratio and edge depth-to-width ratio to meet intermediate depth-to-width ratio.
With continued reference to Fig. 2, the side wall 11 of chamber body 1 include: upper shell 111, lower shell 113 and be located at upper shell
Middle cylinder 112 between 111 and lower shell 113, middle cylinder 112 are insulating cylinder.
Reaction chamber further includes coil 6, and coil 6 surround and is coupled on the side wall 11 between collimator 4 and pedestal 2, wherein
Coil 6 is coupled to radio-frequency power supply 7.
Specifically, coil 6 can be surrounded on the outside of middle cylinder 112, be wound by a circle or multiturn spiral coil
It is formed, and connects external radio-frequency power supply 7.Radio-frequency power supply 7 provides radio-frequency power, and the electromagnetic field that coil 6 generates is through middle cylinder
112 are coupled in chamber body 1.Coil 6 is located at outside plasma environment, does not need individually to replace coil 6, reduces
Use cost.
Upper shell 111, lower shell 113 using metal material simultaneously be grounded, middle cylinder 112 be insulating cylinder, can be used ceramics,
The insulating materials such as quartz are made, as a part of chamber body 1, to realize the 1 good vacuum degree in inside of chamber body, and
The energy of electromagnetic field for issuing coil 6 is coupled in chamber body 1.
Reaction chamber further include: upper liner 131, faraday's liner 132 and lower liner 133.Upper liner 131 is side wall 11
A part, and collimator 4 is coupled to liner.Collimator 4 can be integrally machined with upper liner 131, can also pass through company
Fitting is suspended on liner 131.Faraday's liner 132 is also a part of side wall 11, be located at upper liner 131 and pedestal 2 it
Between, and the outside of faraday's liner 132 is arranged in coil 6.
Upper shell 111 is fixed on by adapter 14 in upper 131 top of liner, and 33 one end of lower liner is fixed by adapter 15
In on lower shell 113, the other end extends to pedestal 2.Faraday's liner 132 between upper liner 131 and lower liner 133, and
It is corresponding with the position of middle cylinder 112 and coil 6.By the way that upper liner 131, faraday's liner 132 and lower liner 133 is arranged,
Metallic atom when technique in chamber body 1 will deposit to above-mentioned interior lining, without depositing on the cylinder in outside, to have
Effect prevents cylinder contaminated, improves the service life of reaction chamber, reduces use cost.
Upper liner 131 and lower liner 133 are grounded by adapter, and faraday's liner 132 is set as floating potential, and passes through
The insulating materials such as ceramics or quartz and the upper liner 131 and lower liner 133 of ground connection are completely cut off.As shown in figure 5, faraday's liner
132 can be fixed on adapter 14 by the insulated column 16 of ceramic material, to be suspended on chamber body 1, make its electric potential floating.It is logical
It crosses and is set as suspending by the current potential of faraday's liner 132, the more energy of coil 6 can be made to couple by faraday's liner 132
Into in chamber body 1, energy coupling efficiency is further improved.
Meanwhile faraday's liner 132 issues coil 6 in order to prevent energy production eddy-current loss and fever, faraday
At least one is provided on liner 132 to crack, and is cracked along the axial setting of faraday's liner 132.As shown in figure 5, faraday's liner
132, which are circumferentially placed with four, cracks 1321, and crack 1321 extends along Z-direction shown in Fig. 2, and faraday's liner is cracking at 1321
It is fully disconnected, cracks and 1321 divide faraday's liner 132 for non-touching four blocks of plate.Above-mentioned whirlpool can be effectively prevented in this way
Stream loss and fever, are operatively coupled to the energy of coil 6 in chamber body 1.
The quantity of cracking of faraday's liner 132 can also be fewer of more than four, and the width that cracks is less than 10mm.In faraday
Lining can also be grounded or connect electrical component and be at different potentials.
In conjunction with shown in Fig. 2 and Fig. 6, the coil 6, radio-frequency power supply 7 of the present embodiment constitute an auxiliary plasma driving source.Work
The process gas of such as argon gas is passed through when skill in chamber body 1, except the plasma excitation source 504 of top electrode assembly can motivate work
Skill gas generates outside plasma, and the energy that coil 6 issues is coupled to chamber body through middle cylinder 112, faraday's liner 132
In 1, excitation argon gas generates the second plasma Ar+101.Under the back bias voltage effect of pedestal 2, the second plasma Ar+101 add
The film of speed bombardment workpiece to be processed X deep hole bottom, a part of metal M 102 for keeping deep hole bottom deposited deposit to deep hole
Two side walls, which thereby enhance the coverage rate of deep hole side wall.
It can be seen that the embodiment of the present disclosure is mentioned by the way that auxiliary plasma driving source and collimator is arranged in reaction chamber
The high coverage rate of deep hole side wall, the coverage rate of deep hole bottom, the symmetry of deep hole sidewall coverage, and improve film deposition
Uniformity；And it is contaminated to effectively prevent insulating cylinder, improves the service life of reaction chamber, reduces use cost.
Another embodiment of the disclosure provides a kind of semiconductor processing equipment, which is magnetron sputtering object
Physical vapor deposition equipment can be used for the preparation of the sputter materials such as Cu, Ta, Ti, Al and film.Semiconductor processing equipment includes upper
The reaction chamber of one embodiment.
It should also be noted that, the direction term mentioned in embodiment, for example, "upper", "lower", "front", "rear", " left side ",
" right side " etc. is only the direction with reference to attached drawing, not is used to limit the protection scope of the disclosure.Through attached drawing, identical element by
Same or similar appended drawing reference indicates.When may cause understanding of this disclosure and cause to obscure, conventional structure will be omitted
Or construction.
And the shape and size of each component do not reflect actual size and ratio in figure, and only illustrate the embodiment of the present disclosure
Content.In addition, in the claims, any reference symbol between parentheses should not be configured to the limit to claim
System.
It unless there are known entitled phase otherwise anticipates, the numerical parameter in this specification and appended claims is approximation, energy
Enough bases pass through the resulting required characteristic changing of content of this disclosure.Specifically, all be used in specification and claim
The middle content for indicating composition, the number of reaction condition etc., it is thus understood that repaired by the term of " about " in all situations
Decorations.Under normal circumstances, the meaning expressed refers to include by specific quantity ± 10% variation in some embodiments, some
± 5% variation in embodiment, ± 1% variation in some embodiments, in some embodiments ± 0.5% variation.
Furthermore word "comprising" does not exclude the presence of element or step not listed in the claims.It is located in front of the element
Word "a" or "an" does not exclude the presence of multiple such elements.
In addition, unless specifically described or the step of must sequentially occur, there is no restriction in the above institute for the sequence of above-mentioned steps
Column, and can change or rearrange according to required design.And above-described embodiment can be based on the considerations of design and reliability, that
This mix and match is used using or with other embodiments mix and match, i.e., the technical characteristic in different embodiments can be freely combined
Form more embodiments.
Similarly, it should be understood that in order to simplify the disclosure and help to understand one or more of each open aspect,
Above in the description of the exemplary embodiment of the disclosure, each feature of the disclosure is grouped together into single implementation sometimes
In example, figure or descriptions thereof.However, the disclosed method should not be interpreted as reflecting the following intention: i.e. required to protect
The disclosure of shield requires features more more than feature expressly recited in each claim.More precisely, as following
Claims reflect as, open aspect is all features less than single embodiment disclosed above.Therefore,
Thus the claims for following specific embodiment are expressly incorporated in the specific embodiment, wherein each claim itself
All as the separate embodiments of the disclosure.
Particular embodiments described above has carried out further in detail the purpose of the disclosure, technical scheme and beneficial effects
Describe in detail bright, it should be understood that the foregoing is merely the specific embodiment of the disclosure, be not limited to the disclosure, it is all
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the protection of the disclosure
Within the scope of.
Claims (16)
1. a kind of reaction chamber, comprising:
Pedestal, for carrying workpiece to be processed；
Target is arranged in the upper space of the reaction chamber；And
The target or less is arranged in, in the space more than workpiece to be processed, to improve the workpiece to be processed in collimator
The coverage rate of deep hole bottom and the symmetry of deep hole sidewall coverage.
2. reaction chamber according to claim 1, wherein the collimator includes central area, intermediate region and edge
Region；
The central area, the intermediate region, the fringe region include multiple along reaction chamber sidewall direction extension
Through-hole, the depth-to-width ratio of through-hole is center depth-to-width ratio in the central area, through-hole in the intermediate region it is deep wide
Than for intermediate depth-to-width ratio, the depth-to-width ratio of the through-hole in the fringe region is edge depth-to-width ratio；Wherein, the intermediate depth-to-width ratio
Greater than at least one of the center depth-to-width ratio and the edge depth-to-width ratio.
3. reaction chamber as claimed in claim 2, wherein the intermediate depth-to-width ratio be greater than the center depth-to-width ratio, it is described in
Between depth-to-width ratio be greater than the edge depth-to-width ratio.
4. reaction chamber as claimed in claim 3, wherein the center depth-to-width ratio is identical as the edge depth-to-width ratio.
5. reaction chamber as claimed in claim 4, wherein the intermediate depth-to-width ratio is than the center depth-to-width ratio and/or described
Edge depth-to-width ratio is big by 15% or more.
6. reaction chamber as claimed in claim 3, wherein the ratio of the center depth-to-width ratio and the edge depth-to-width ratio is greater than
2。
7. reaction chamber as claimed in claim 3, wherein the central area, the intermediate region, fringe region tool
There is identical via area, and the via depth of the intermediate region is greater than the through-hole of the central area and the fringe region
Depth.
8. reaction chamber as claimed in claim 3, wherein the central area, the intermediate region, fringe region tool
There is identical via depth, and the via area of the intermediate region is less than the through-hole of the central area and the fringe region
Area.
9. reaction chamber as claimed in claim 2, further includes:
Coil, around the chamber side wall being coupled between the collimator and the pedestal, wherein the coil, which is coupled to, to be penetrated
Frequency power.
10. reaction chamber as claimed in claim 2, further includes:
Upper liner, the upper liner is a part of the chamber side wall, and the collimator is coupled to the upper liner；And
Faraday's liner, faraday's liner are also a part of the chamber side wall, are located at the upper liner and the pedestal
Between, and the coil is arranged on the outside of faraday's liner.
11. reaction chamber as claimed in claim 10, wherein faraday's liner, which suspends, to be arranged.
12. reaction chamber as claimed in claim 10, wherein lining is provided at least one and cracks in the faraday, institute
It states to crack and axially be arranged along faraday's liner.
13. reaction chamber as claimed in claim 12, wherein the width that cracks is less than 10mm.
14. such as reaction chamber of any of claims 1-13, wherein the central area and the fringe region exist
The sum of the projected area of reaction chamber cross section accounts for the collimator 60% or more of the reaction chamber cross sectional planes projection gross area.
15. the reaction chamber as described in any in claim 1-14, wherein the material of the collimator is aluminium or stainless
Steel.
16. a kind of semiconductor processing equipment, including such as the described in any item reaction chambers of claim 1-15.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811292310.XA CN109300764A (en) | 2018-10-31 | 2018-10-31 | Reaction chamber and semiconductor processing equipment |
| PCT/CN2019/113726 WO2020088415A1 (en) | 2018-10-31 | 2019-10-28 | Reaction chamber and semiconductor processing device |
| TW108139242A TWI727477B (en) | 2018-10-31 | 2019-10-30 | Reaction chamber and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811292310.XA CN109300764A (en) | 2018-10-31 | 2018-10-31 | Reaction chamber and semiconductor processing equipment |
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| CN109300764A true CN109300764A (en) | 2019-02-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201811292310.XA Pending CN109300764A (en) | 2018-10-31 | 2018-10-31 | Reaction chamber and semiconductor processing equipment |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109837513A (en) * | 2019-04-11 | 2019-06-04 | 德淮半导体有限公司 | Shield structure and its Pvd equipment for Pvd equipment |
| CN110004418A (en) * | 2019-04-17 | 2019-07-12 | 德淮半导体有限公司 | Shield structure and Pvd equipment for Pvd equipment |
| CN110306161A (en) * | 2019-07-01 | 2019-10-08 | 北京北方华创微电子装备有限公司 | Semiconductor machining chamber and semiconductor processing equipment |
| WO2020088415A1 (en) * | 2018-10-31 | 2020-05-07 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing device |
| CN112185786A (en) * | 2019-07-03 | 2021-01-05 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and grounding ring assembly for plasma processing apparatus |
| CN115233174A (en) * | 2022-08-04 | 2022-10-25 | 北京北方华创微电子装备有限公司 | Process chamber |
| WO2024027361A1 (en) * | 2022-08-02 | 2024-02-08 | 上海陛通半导体能源科技股份有限公司 | Film coating device and method capable of improving deep hole filling |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102418073A (en) * | 2010-09-27 | 2012-04-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Sputtering chamber, pre-cleaning chamber and plasma processing equipment |
| CN104746043A (en) * | 2013-12-31 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and plasma processing equipment |
| CN105849863A (en) * | 2013-10-24 | 2016-08-10 | 应用材料公司 | Bipolar collimator utilized in a physical vapor deposition chamber |
| US20170117121A1 (en) * | 2015-10-27 | 2017-04-27 | Applied Materials, Inc. | Biasable flux optimizer / collimator for pvd sputter chamber |
| CN209071271U (en) * | 2018-10-31 | 2019-07-05 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
-
2018
- 2018-10-31 CN CN201811292310.XA patent/CN109300764A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102418073A (en) * | 2010-09-27 | 2012-04-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Sputtering chamber, pre-cleaning chamber and plasma processing equipment |
| CN105849863A (en) * | 2013-10-24 | 2016-08-10 | 应用材料公司 | Bipolar collimator utilized in a physical vapor deposition chamber |
| CN104746043A (en) * | 2013-12-31 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and plasma processing equipment |
| US20170117121A1 (en) * | 2015-10-27 | 2017-04-27 | Applied Materials, Inc. | Biasable flux optimizer / collimator for pvd sputter chamber |
| CN209071271U (en) * | 2018-10-31 | 2019-07-05 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020088415A1 (en) * | 2018-10-31 | 2020-05-07 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing device |
| CN109837513A (en) * | 2019-04-11 | 2019-06-04 | 德淮半导体有限公司 | Shield structure and its Pvd equipment for Pvd equipment |
| CN110004418A (en) * | 2019-04-17 | 2019-07-12 | 德淮半导体有限公司 | Shield structure and Pvd equipment for Pvd equipment |
| CN110306161A (en) * | 2019-07-01 | 2019-10-08 | 北京北方华创微电子装备有限公司 | Semiconductor machining chamber and semiconductor processing equipment |
| CN110306161B (en) * | 2019-07-01 | 2021-11-12 | 北京北方华创微电子装备有限公司 | Semiconductor processing chamber and semiconductor processing equipment |
| CN112185786A (en) * | 2019-07-03 | 2021-01-05 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and grounding ring assembly for plasma processing apparatus |
| CN112185786B (en) * | 2019-07-03 | 2024-04-05 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and ground ring assembly for the same |
| WO2024027361A1 (en) * | 2022-08-02 | 2024-02-08 | 上海陛通半导体能源科技股份有限公司 | Film coating device and method capable of improving deep hole filling |
| CN115233174A (en) * | 2022-08-04 | 2022-10-25 | 北京北方华创微电子装备有限公司 | Process chamber |
| CN115233174B (en) * | 2022-08-04 | 2023-09-08 | 北京北方华创微电子装备有限公司 | Process chamber |
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