KR20150109778A - Multi-type deposition apparatus and methode thereof - Google Patents

Multi-type deposition apparatus and methode thereof Download PDF

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KR20150109778A
KR20150109778A KR1020140033058A KR20140033058A KR20150109778A KR 20150109778 A KR20150109778 A KR 20150109778A KR 1020140033058 A KR1020140033058 A KR 1020140033058A KR 20140033058 A KR20140033058 A KR 20140033058A KR 20150109778 A KR20150109778 A KR 20150109778A
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process chamber
substrate
chamber
gas
atomic layer
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KR1020140033058A
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KR101634694B1 (en
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김운태
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김운태
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32788—Means for moving the material to be treated for extracting the material from the process chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools

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  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
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  • Chemical Vapour Deposition (AREA)

Abstract

In the present invention, a plurality of process modules each having a vacuum chamber for forming a vacuum and a vacuum chamber for pressure regulation as a basic unit are stacked on the outside of the process chamber and the process chamber, The process chamber and the vacuum chamber are designed to have the minimum space for the optimum process and the atomic layer deposition process can be simultaneously performed in the process chambers in the plurality of process modules. Thus, the amount of the raw material precursor and the reaction precursor is reduced, It minimizes the cost and improves the productivity. It is also easy to confirm the operation of the device since individual process progress or individual maintenance can be performed for each process module. In addition, the substrate or mask to be atomic layer deposition is brought into close contact with the upper process chamber or the lower process chamber in the optimized process chamber, thereby preventing deposition of the rear surface of the substrate and simultaneously forming two substrates.

Description

MULTI-TYPE DEPOSITION APPARATUS AND METHODE THEREOF FIELD OF THE INVENTION [0001]

The present invention relates to a vapor deposition reactor and a thin film forming method using the vapor deposition reactor, and more particularly, to an atomic layer deposition (ALD) And a vacuum chamber for holding a space of the vacuum chamber in a vacuum state.

In general, a method of depositing a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or a glass substrate includes physical vapor deposition (PVD) using physical collision such as sputtering, And chemical vapor deposition (CVD).

However, in recent years, as the design rule of a semiconductor device has become finer, a thin film of a fine pattern is required and a step of a region where a thin film is formed is greatly increased, so that a fine pattern of atomic layer thickness is formed very uniformly But also the use of atomic layer deposition (ALD), which is excellent in step coverage, is increasing.

This atomic layer deposition method is similar to the general chemical vapor deposition method in that it utilizes a chemical reaction between gas molecules. However, unlike conventional CVD in which a plurality of gaseous molecules are injected into a process chamber at the same time and the resulting reaction product is deposited on the substrate, the atomic layer deposition method injects a gas containing one source material into the process chamber, There is a difference in that a product by chemical reaction between the source material at the substrate surface is deposited by chemically adsorbing the substrate and then introducing a gas containing another source material into the process chamber.

The atomic layer deposition method described above can be applied to a thin film encapsulation for replacing a conventional glass envelope in an AMOLED display, a barrier film for a flexible substrate, a buffer layer for a solar cell, a ferroelectric material for a semiconductor -k) capacitor, or aluminum (Al), copper (Cu) wiring diffusion preventing film (TiN, TaN, etc.).

Such an atomic layer deposition method is a process in which single-wafer, batch-type, and substrate used in PECVD (plasma enhanced chemical vapor deposition) transport the bottom of a small reactor or a method in which a scan type reactor transports the top of a substrate have.

First, in the sheet processing system, a process is performed after one sheet of substrate is loaded. The sheet processing system is composed of a moving susceptor for input / output and heating of a substrate, a diffuser (main body of a showerhead type) have. However, in the single-wafer type, the chambers are very thick to prevent deformation of the process chambers and peripheral portions due to external atmospheric pressure during vacuum formation, and gate valves for carrying in / There is a problem that the productivity is remarkably reduced due to a rapid increase in consumption of raw precursor and reaction precursor, a rapid increase in maintenance cost, and an increase in process time due to an increase in adsorption-purge-reaction-purge time.

In order to solve the problem of increased maintenance cost and low productivity due to the large amount of raw material precursor and reaction precursor due to the large volume of atomic layer deposition equipment, And the process is performed simultaneously. This arrangement type is partially applied to a solar cell process. However, there is a problem that simultaneous film formation is performed not only on the front side but also on the back side of the substrate, a problem of uniformity and reproducibility of thin films on a large number of substrates, There is a problem that the entire ultra-large chamber must be cleaned even in the event of contamination.

Next, in the scan type reactor system, a plurality of small reactors corresponding to the length of one side of the substrate in the vacuum chamber are arranged and a substrate or a small reactor is reciprocated to form a film. However, It is known that there is a problem of low productivity due to particle issue and long deposition time due to difficulty of gas flow control of the reactor.

Korean Patent No. 10-1044913 (registered on June 22, 2011) discloses a technique for a batch type atomic layer deposition apparatus. Korean Patent Publication No. 10-2013-0062374 (published on June 12, 2013) discloses a technique relating to an atomic layer deposition apparatus having a reciprocating susceptor.

Accordingly, in the present invention, a plurality of process modules each having a vacuum chamber for forming a vacuum and a vacuum chamber for pressure regulation as a basic unit are stacked on the outside of the process chamber and the process chamber, The process chamber and the vacuum chamber of the module are designed to have the minimum space for the optimal process and the atomic layer deposition process can be simultaneously performed in the process chambers in the plurality of process modules, thereby reducing the amount of the raw material precursor and the reaction precursor, By minimizing the process time, it is possible to improve the productivity while reducing the cost, and it is easy to confirm the operation of the device since individual process progress or individual maintenance can be performed for each process module. The present invention also provides a multi-atomic atomic layer deposition apparatus and method for preventing deposition of a rear surface of a substrate and simultaneously depositing two substrates by bringing a substrate or a mask to be atomic layer deposition into close contact with an upper process chamber or a lower process chamber in an optimized process chamber .

The present invention is a multi-atomic atomic layer deposition apparatus, wherein a process module having a minimum process chamber and a vacuum chamber includes an upper process chamber and a lower process chamber, and is characterized in that when loading or unloading a substrate to be atomic layer deposition process A process chamber in which the upper process chamber and the lower process chamber are separated and the upper process chamber and the lower process chamber are combined to form a closed reaction space when the deposition process is performed on the substrate, And a vacuum chamber in which the chamber is vertically stacked, and the space of the process chamber is maintained in a vacuum state or a pressure can be controlled.

The upper process chamber is fixed to the vacuum chamber, and the lower process chamber moves up and down in the vacuum chamber to be coupled to or separated from the upper process chamber.

The upper process chamber may further include a gas supply unit for supplying a process gas or a purge gas to the closed reaction space on one side of the upper process chamber and a gas exhaust unit for exhausting gas supplied to the closed reaction space, Is provided on the other side of the upper process chamber.

Further, the gas supply unit is formed at an outer or central portion on a side surface or an upper surface of the upper process chamber.

An electrode for generating plasma is formed on the lower surface of the upper process chamber.

In addition, the electrode can be coupled to and separated from the insulator of the upper process chamber and the power input contact portion by the attaching / detaching device of the upper process chamber.

An electrode for generating a plasma is formed at an inlet of the gas supply unit in which the process gas or the purge gas is introduced into the closed reaction space.

The electrode is surrounded by an insulator so as to be insulated from the upper process chamber.

The gas supply unit may be formed of a diffusion space or a showerhead type diffuser for uniform gas flow on a side or a center of the upper process chamber to generate the process gas or gas in a vertical or horizontal direction on the substrate in the closed reaction space. And the purge gas is injected.

Further, the vacuum chamber may include a guide portion for stacking the process chamber in the inner space of the vacuum chamber, and for supporting or transferring the process chamber.

The vacuum chamber may include fixing means for fixing the upper process chamber and transfer means for moving the lower process chamber up and down.

The present invention also provides a method of depositing a layered atomic layer, the method comprising: loading a substrate and a mask in the process chamber; and, when the substrate and the mask are loaded, the upper process chamber and the lower process chamber of the process chamber are combined, Forming a space, and performing an atomic layer deposition process on the substrate in an enclosed reaction space.

The atomic layer deposition method may further include separating the upper process chamber and the lower process chamber from each other after the atomic layer deposition process is completed, thereby unloading the substrate.

Further, the atomic layer deposition process is performed simultaneously in the process chambers in the two or more process modules.

The atomic layer deposition process is performed separately in the process chambers of the vacuum chamber units in the two or more process modules.

The upper process chamber is fixed to the vacuum chamber, and the lower process chamber moves up and down by a transfer means provided in the vacuum chamber to be coupled to or separated from the upper process chamber.

The step of performing the atomic layer deposition step may include the steps of supplying a raw material precursor to the substrate in the reaction space through a gas supply unit formed on one side of the process chamber, Supplying a purge gas to the substrate through the gas supply unit to exhaust a raw precursor that has not been adsorbed on the substrate, and supplying the reaction precursor to the substrate through the gas supply unit after the exhaust, Forming an atomic layer thin film through a chemical reaction with the precursor and supplying a purge gas to the substrate through the gas supply unit after the formation of the atomic layer thin film to exhaust a reaction precursor that can not bind to the precursor .

Also, at least one of the raw material precursor, the reaction precursor, and the purge gas is supplied or exhausted through the shared gas pipe.

Also, at least one of the raw material precursor, the reaction precursor, and the purge gas may be supplied through a gas supply unit formed as a diffusion space or a showerhead diffuser for uniform gas flow to the side or the center of the upper process chamber, And is injected perpendicularly or horizontally to the substrate.

Generating a plasma at a lower surface of the upper process chamber corresponding to the substrate or at an inlet connected to the reaction space when the reaction precursor is supplied to the substrate; And forming an atomic layer thin film through the reaction.

According to the present invention, in atomic layer deposition, a process module having one or more process chambers housed inside of at least two stacked vacuum chambers is characterized in that in the process chamber housed in each vacuum chamber, By allowing the deposition process to be performed, it is possible to combine various processes for each process module, thereby improving equipment efficiency and individual maintenance by optimizing the process, thereby reducing cost and productivity by minimizing manpower and time for maintenance Can be improved.

In addition, the combination of optimized process modules enables simultaneous process progression in each process chamber, thereby greatly improving productivity.

Also, by minimizing the space for the process in each process chamber, it is possible to improve the productivity by reducing the adsorption time of the raw precursor, the reaction time and the purge time of the reaction precursor by optimizing the volume in the process chamber, and improving the productivity of the raw material precursor, There is an advantage that the consumption of the gas can be reduced and the cost required for the atomic layer deposition process can be reduced.

In addition, a separate external vacuum chamber configuration can simplify the process chamber and reduce weight, which can reduce the maintenance cost of the atomic layer deposition equipment and increase maintenance convenience.

In addition, in the optimized process chamber, the substrate to be atomic layer deposition is suitably brought into close contact with the upper process chamber or the lower process chamber, thereby preventing deposition on the back surface of the substrate.

In addition, the present invention can be implemented as a fixed type in which a plurality of process chambers in a vacuum chamber are fixed, thereby solving the problem of particles generated due to the difficulty of gas control due to the relative motion between the substrate and the process chamber, It is advantageous in that it can be easily applied to various process characteristics and the configuration of the substrate in the future.

1 is a configuration diagram of an atomic layer deposition apparatus according to an embodiment of the present invention;
FIG. 2 is a three-dimensional perspective view of an atomic layer deposition apparatus according to an embodiment of the present invention,
FIG. 3 is a cross-sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention, showing an individual transferring and aligning apparatus or a configuration of a simultaneous transferring and aligning apparatus
4 is a perspective view of a process chamber according to an embodiment of the present invention,
5 is a detailed cross-sectional structural view of a process chamber according to an embodiment of the present invention,
FIG. 6 is a schematic cross-sectional view of a process chamber according to an embodiment of the present invention, in which the process gas is capable of cross flow or moving wave method and plasma process on a substrate,
FIG. 7 is a schematic cross-sectional view of a process chamber according to an embodiment of the present invention, which is a schematic view showing a process gas, a purge gas, a configuration of an exhaust unit, and a multi-divisional deposition process using plasma.
8 is a cross-sectional view of a process chamber according to an embodiment of the present invention.

Hereinafter, the operation principle of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. The following terms are defined in consideration of the functions of the present invention, and these may be changed according to the intention of the user, the operator, or the like. Therefore, the definition should be based on the contents throughout this specification.

FIG. 1 illustrates various configurations of an atomic layer deposition apparatus according to an embodiment of the present invention. The processing module 1300 of the atomic layer deposition apparatus 1000 includes a plurality of vacuum chambers 1100 and a vacuum chamber 1100). ≪ / RTI >

The process module 1300 may process different thin film deposition such as A or B or different deposition pressures and deposition rates for each of the unit process modules 1300 that can individually control the pressure and atmosphere, It is possible to optimize various combinations of processes, and it is possible to perform maintenance for each unit process module 1300, thereby maximizing the use efficiency of the apparatus.

Hereinafter, the structure of the atomic layer deposition apparatus 1000 of the present invention will be described in detail with reference to FIGS. 1 and 2. FIG.

First, the process chamber 1200 is a chamber capable of performing an atomic layer deposition process on the substrate. Each of the chambers has an independent space. At least one of the chambers is vertically stacked to form an external vacuum chamber 1100. Respectively. The process chamber 1200 is moved up and down by an upper process chamber 1210 whose position is fixed when the vacuum chamber 1100 is drawn into the vacuum chamber 1100 and a transfer unit provided to the vacuum chamber 1100, And a separate lower process chamber 1220.

Such a process chamber 1200 can be separated or coupled to the upper process chamber 1210 and the lower process chamber 1220 as described above to secure only a space capable of performing an optimal atomic layer deposition process, Can be minimized.

The process chamber 1200 is capable of entering and exiting the vacuum chamber 1100 in conjunction with the guide portion 1204 provided on the upper side or the side surface of the vacuum chamber 1100, The guide portion 1204 can be adjusted to be fixed.

Next, the vacuum chamber 1100 has a multi-cavity portion 1202, a guide portion 1204, and the like capable of vertically stacking at least one process chamber therein. The vacuum chamber 1100 maintains the vacuum state, So that the atomic layer deposition process can be performed.

That is, the vacuum chamber 1100 supports a plurality of inner process chambers 1200 in which process chambers 1200 configured to be detachable for an atomic layer deposition process are stacked and arranged, and in each process chamber, And to minimize the influence of external forces exerted on the inner process chamber 1200 from the environment in which there is an external atmosphere and pressure difference.

1, a plurality of process chambers 1200 in which independent atomic layer deposition processes are performed are vertically stacked on one vacuum chamber 1100, or a structure in which a plurality of process chambers 1200 are formed in a process chamber (not shown) in each vacuum chamber 1100 1200 are simultaneously used, deposition is simultaneously performed on a plurality of substrates in a plurality of process chambers 1200, so that productivity can be improved several times as compared to a conventional single substrate evaporator.

FIG. 2 is a three-dimensional perspective view showing the configuration of the atomic layer deposition apparatus 1000 and the process module 1300 according to the embodiment of the present invention described above.

A unit process module 1300 including a process chamber 1200 composed of an upper process chamber 1210 and a lower process chamber 1220 and at least two or more vacuum chambers 1100 including at least one process chamber, And a plurality of process modules 1300 stacked thereon.

FIG. 3 is a cross-sectional view of an atomic layer deposition apparatus 1000 according to an embodiment of the present invention. As shown in FIG. 3, the transfer unit 1110 and the pressure chambers 1110 and 1110 for the individual transfer or simultaneous transfer of the lower process chamber 1220, And constitute a buffer space 1101 for minimizing strain according to the difference.

4 illustrates a detailed cross-sectional structure of a process chamber according to an embodiment of the present invention.

The lower process chamber 1220 is moved down to load the substrate 1010 and the mask 1020 into the process chamber 1200 and the process chamber is opened.

4, when the lower process chamber 1220 is moved from the upper process chamber 1210 to the lower side in the vertical direction by the transfer unit 1110 and the substrate 1010 and the mask 1020 are opened in the process chamber The substrate support portion 1015 and the mask support portion 1017 are sequentially loaded. At this time, the upper process chamber 1210 of the process chamber 1200 is fixedly supported in the vacuum chamber 1100, and the lower process chamber 1220 is supported by the transfer chamber 1110 provided in the vacuum chamber 1100, 1100 in the vertical direction.

When the substrate 1010 and the mask 1020 are loaded on the substrate supporting portion 1015 and the mask supporting portion 1017, the lower processing chamber 1220 is raised by the transferring portion 1110, The mask 1020 is sequentially seated in the lower process chamber 1220 so that the lower process chamber 1220 is finally coupled to the upper process chamber 1210.

At this time, the loading of the substrate 1010 and the mask 1020 may be performed separately for each of the process chambers 1200, and the plurality of process chambers 1200 in the vacuum chamber 1100 may be simultaneously opened have.

After the substrate 1010 and the mask 1020 are loaded with the process chamber 1200 opened, the lower process chamber 1220 is raised by the transfer unit 1110 so that the lower process chamber 1220 is moved to the upper process chamber 1210 so that an independent space of the process chamber 1200 can be formed.

When an independent space is formed in which the upper process chamber 1210 and the lower process chamber 1220 are coupled to each other, the required gas is introduced into the process gas supply unit 1212 according to the progress of the process, An atomic layer deposition process can be performed.

When the atomic layer deposition process for the substrate 1010 is completed in a state where the upper process chamber 1210 and the lower process chamber 1220 are coupled as described above, the lower process chamber 1220 is moved by the transfer unit 1110 The unloading operation for separating the upper process chamber 1210 and the lower process chamber 1220 is performed and the substrate 1010 which has been processed in the unloading state is taken out of the process chamber 1200 .

Referring to FIG. 4, a gas supply unit 1212 and an exhaust unit 1211 may be formed on the upper surface of the upper process chamber 1210. At this time, the gas supply unit 1212 may be formed in the shape of a round tube at the center of both side surfaces of the upper process chamber 1210. The gas supplied from the gas supply unit 1212 is formed on the lower surface of the upper process chamber 1210 to include an internal diffusion region for ensuring uniform flow of the process gas over the entire surface of the substrate.

A mask support 1017 for seating the mask 1020 and a substrate support 1015 for seating the substrate 1010 may be formed on the upper surface of the lower process chamber 1220. The mask 1020 and the substrate 1010 are then loaded to be seated on the respective mask support 1017 and the substrate support 1015 and then placed in an independent space in the process chamber that is created upon coupling the lower process chamber and the upper process chamber . A connection portion 1018 for restricting the height of the mask support 1017 and the substrate support 1015 is formed on the lower surface of the lower process chamber and a support hole of the lower process chamber Separate sealing parts such as an o-ring and a bellows can be additionally formed between the supports.

Before the upper process chamber 1210 and the lower process chamber 1220 are coupled to each other, an image information processing (vision) device for securing and positioning the substrate 1020 and the mask 1020 accurately, And a control unit for controlling the rotation of the substrate or the substrate unit in the left, right, front, rear, and rear directions can be configured to enable accurate alignment.

A mask supporting portion 1017 for mounting the mask 1020 and a substrate supporting portion 1015 for mounting the substrate 1010 are formed on the lower surface of the upper process chamber 1210 to form the upper process chamber 1210, And the substrate of the lower process chamber 1220 can be formed at the same time.

FIG. 5 is a perspective view of a process chamber according to another embodiment of the present invention, showing a stereoscopic perspective view of a process chamber in which a gas supply unit is formed by a showerhead method.

Referring to FIG. 5, a gas supply unit 1212 and an exhaust unit 1211 may be formed on the upper surface of the upper process chamber 1210. At this time, the gas supply unit 1212 may be formed on the upper side or the side surface of the upper process chamber 1210. A showerhead type diffuser 1312 for injecting a process gas is formed on the lower surface of the upper process chamber 1210 so that gas supplied from the gas supply unit 1212 is sprayed onto the entire surface of the substrate.

A mask support 1017 for seating the mask 1020 and a substrate support 1015 for seating the substrate 1010 may be formed on the upper surface of the lower process chamber 1220. The mask 1020 and the substrate 1010 are then loaded to be seated on the respective mask support 1017 and the substrate support 1015 and then transferred to a process And is located in an independent space in the chamber 1200. A connection portion 1018 for fixing the mask support 1017 and the substrate support 1015 to the process chamber 1200 is formed on the lower surface of the lower process chamber 1220.

FIG. 6 is a schematic cross-sectional view of a process chamber according to an embodiment of the present invention, in which a process gas is jetted on a substrate in a cross flow or a traveling wave fashion.

Referring to FIG. 6, a raw material precursor, a reaction precursor, and a purge gas are introduced into a substrate 1010 located inside the process chamber 1200 from one side of the upper process chamber 1210 through a gas supply unit 1212, And a process gas or purge gas used in each process is exhausted through a gas exhaust unit 1211 formed on the other side of the upper process chamber 1210 have.

Hereinafter, the operation of the substrate 1010 will be described with reference to the case where the raw precursor (TAM or the like) supplied to the gas supply unit 1212 passes through the area of the corrugated or wavy shape where one side of the upper process chamber 1210 is easily diffused, So that the adsorption reaction occurs on the upper surface of the substrate 1010 which is seated in the lower process chamber 1220. [

After the adsorption is completed, purge gas (Ar, O 2 , N 2 , N 2 O, etc.) is supplied to the gas supply unit 1212 to discharge the source precursor remaining on the substrate to the gas exhaust unit 1211, Is supplied to the gas supply unit 1212 and is injected into the substrate 1010 to form a desired atomic layer thin film by a chemical reaction between the raw material precursor and the reaction precursor.

After the thin film is formed on the substrate 1010, the purge gas is supplied to the gas supply unit 1212 again to remove the remaining precursor, which is not bonded to the substrate precursor on the substrate 1010, And the atomic layer thin film on the substrate 1010 is formed to have a desired thickness by repeating the above four steps as one cycle.

At this time, in order to smoothly react the reaction precursor and improve the thin film characteristics, a heater function is applied to the lower process chamber 1220 to control the temperature of the substrate 1010, thereby performing a susceptor function. After the upper process chamber 1210 and the lower process chamber 1220 are coupled to each other, the process chamber 1200 is coupled to the lower portion of the process chamber 1200 to prevent particles from being generated due to gas leakage to the outside of the process chamber 1200, A base sealing portion 1221 and an additional sealing portion 1222 can be formed outside the process chamber 1220 and a surface contact forming portion for perfect surface contact between the upper process chamber 1210 and the lower process chamber 1220 It may be further configured.

Hereinafter, the atomic layer deposition process in the upper process chamber 1200 will be described in more detail.

First, when the upper process chamber 1210 and the lower process chamber 1220 of the process chamber 1200 are combined and the process of the atomic layer deposition process becomes possible, in the first step of the atomic layer deposition process, 1212 and the raw material precursor supplied through the gas supply unit 1212 is injected onto the substrate 1010 to be subjected to the atomic layer deposition process so that a single molecular layer of the raw precursor . Next, when the precursor of the raw material is sufficiently injected on the substrate 1010, the purge gas is supplied to the gas supply unit 1212 in the second step of the atomic layer deposition process, and the physical adsorption Layer raw material precursor is separated by the purge gas from the substrate 1010 and exhausted through the gas exhaust portion 1211 to obtain a single molecular layer of the raw material precursor.

At this time, when the precursor material is injected onto the substrate 1010, the precursor material is chemically or physically adsorbed on the surface of the substrate 1010 to form a thin film. In this state, an inert purge gas is introduced into the substrate 1010 The raw precursor of the physical adsorption layer having relatively weak bonding force is separated from the substrate 1010 and exhausted. However, the precursor of the physical adsorption layer is bonded via the covalent bond on the substrate 1010, The raw precursor of the chemisorbing layer is not separated.

Next, in a third step of the atomic layer deposition process, the reaction precursor is supplied through the gas supply unit 1212 to spray the reaction precursor onto the substrate 1010. Accordingly, the reaction precursor injected onto the substrate 1010 reacts with the raw precursor adsorbed on the substrate 1010 to form an atomic layer thin film. When the atomic layer deposition is performed by the gas phase reaction between the precursor and the reaction precursor as described above, the purge gas is supplied through the gas supply unit 1212 in the fourth step of the atomic layer deposition process, Precursor or physically adsorbed molecules.

By repeating the above-described four-step atomic layer deposition process in one cycle, the atomic layer thin film is formed on the substrate 1010 to a desired thickness.

At this time, in the above-described atomic layer deposition process, the gas supply unit 1212 is formed on one side of the process chamber 1200, and the process gas is sprayed on the substrate in a cross flow or a moving wave manner. However, The gas supply unit 1212 may be formed as a shower head type or the like on the upper process chamber 1210 so that the precursor may be injected perpendicularly to the surface of the substrate 1010.

An electrode 1313 for plasma formation is disposed in the center of the upper process chamber 1210 and an insulator 1314 is formed between the electrode 1313 and the upper process chamber 1210 to form an upper process chamber 1210 and an upper process chamber 1210. [ Thereby preventing a short between the electrodes 1313 from being generated.

First, the precursor of the raw material is supplied to the gas supply unit 1212 and uniformly supplied to one side of the substrate 1010, so that the upper portion of the substrate 1010, which is seated in the lower process chamber 1220, Adsorption reaction occurs on the surface.

After the adsorption of the raw precursor is completed, a purge gas is supplied to the gas supply unit 1212 to discharge the raw material precursor remaining on the substrate 1010 to the gas exhaust unit 1211.

Subsequently, the reaction precursor is supplied to the gas supply unit 1212 and injected to the substrate. Then, power is supplied to the electrode 1313 to generate a plasma 1030 directly on the substrate 1010 to generate plasma 1030, The precursor of the precursor is reacted with the precursor to form an atomic layer. At this time, in the formation of the atomic layer thin film on the substrate 1010 using the plasma 1030, the purge gas containing the reaction precursor is supplied as another embodiment, and the plasma 1030 is supplied at the time when the precursor of the raw material on the substrate 1010 is completely removed. To form a film.

In order to minimize the influence of the direct plasma 1030 on the thin film of the substrate 1010, a structure may be provided in which a separate electrode 1313 and an insulator 1314 are provided in the gas supply unit 1212 .

The precursor of the raw material precursor, the precursor precursor and the purge gas are sequentially supplied to the substrate 1010 located inside the process chamber 1200 from the outside of the upper process chamber 1210 through the gas supply unit 1212 And a process gas or purge gas used in each process is exhausted through a gas exhaust unit 1211 formed at the center of the upper process chamber 1210. [

Also, in order to minimize contamination of the upper process chamber 1210, the process is progressed with the substrate or blank mask 1050 periodically replaceable by the robot while sharing the gas supply unit 1212 and the gas exhaust unit 1211 It is possible.

The raw precursor, the reaction precursor and the purge gas are supplied to the substrate 1010 located in the process chamber 1200 through the showerhead diffuser 1312 formed at the center of the upper process chamber 1210 in a showerhead manner, And the process gas or the purge gas used in each process is exhausted through the gas exhaust unit 1211 formed on both sides of the upper process chamber 1210 .

Further, the exhaust region close to the substrate 1010 can be formed at both ends or all four sides of the substrate 1010, and it is possible to improve the flow uniformity of the corrugated shape, the wavy shape, the hole type diffuser, the slit type diffuser, And the exhaust inlet portion may be disposed as close as possible to the substrate 1010 to minimize contamination of unnecessary regions other than the substrate 1010 which is required to be formed.

In addition, in order to prevent damage to the lower film due to damage to the lower film due to a material difficult to be directly applied to the plasma or ions or electrons, a gap insulator 1312 is provided between the electrode 1413 and the showerhead diffuser 1312, The plasma 1030 is generated only between the electrode 1413 and the diffuser 1312 by supplying the radical through the dissociation of the reaction precursor to the substrate 1010 without damaging the substrate 1010, Can be formed.

7 is a cross-sectional view of a process chamber 1200 according to another embodiment of the present invention.

Sectional area of the large-area substrate without applying a mask to the large-area substrate.

Referring to FIG. 7, the upper process chamber 1210 may be mounted on a large area substrate 1010,

The reaction precursor and the purge gas are sequentially injected onto the substrate 1010 for each region in accordance with the order of the atomic layer deposition process, And FIG.

At this time, each atomic layer deposition unit 1340 has a gas supply unit 1312 for supplying a process gas onto the substrate 1010 in each region, and a process gas or a purge gas And a gas exhaust unit 1311 for exhausting the exhaust gas.

 In addition, it is possible to make the gas flow as uniform as possible through the showerhead type diffuser, the center hole diffuser, the slit type diffuser, etc., and the process using direct plasma or indirect plasma generated by supplying power to each diffuser becomes possible.

7, in the basic structure for multi-division film formation,

A purge gas supply unit 1412 for supplying a purge gas in addition to the boundary position is provided to form a closed loop connected with the gas exhaust unit 1311 so that the boundary between the divided regions can be more clearly realized.

In FIG. 7, the shower head type diffuser and the center hole diffuser are shown as an example, but various combinations of the shower head type diffuser and the center hole diffuser are possible.

Accordingly, exposure, diffusion, and residual gas can be prevented from being generated outside the film forming region when the raw material precursor, the reaction precursor, and the purge gas are supplied. Accordingly, even when a mask for separating the film forming region of the large- The film formation can be performed.

FIG. 8 is a detailed cross-sectional view of a process chamber 1200 according to an embodiment of the present invention, illustrating a schematic configuration for adjusting a deposition region of a substrate 1010 without using a mask 1020 and using a driving gas 1415 And a schematic configuration for implementing a detachable electrode 1313 is schematically shown in which a gap height between the upper process chamber 1200 and the lower process chamber 1220 is adjusted.

8, a gas supply unit 1312 for supplying a process gas onto the substrate 1010 and a purge gas supply unit 1412 on the other side and a gas exhaust unit 1311 for exhausting a process gas and a purge gas ).

It is possible to constitute a device unit 1416 capable of adjusting the displacement according to the pressure having the same function as the membrane at the inlet of the gas exhaust unit 1311 to sequentially increase or decrease the deposition area by adjusting the area of the process gas .

At this time, if the displacement regulating portion 1416 of the gas discharging portion 1311 is reduced from the inner side to the outer side, the deposition of the evaporation material 1 proceeds and then the deposition of the evaporation material 2 proceeds in another process module or another processing device, It is possible to expand the deposition to be completely wrapped to the outer side of the Si film forming portion, thereby completely sealing each layer of the deposition material.

8, the basic sealing portion 1221 may be formed as a device portion 1416 capable of adjusting the displacement according to a pressure having the same function as a membrane, so that the gap height between the upper process chamber 1210 and the lower process chamber 1220 can be easily It is possible to control various processes.

8, the attachment / detachment unit 1315 of the electrode 1313 formed in the upper process chamber 1210 is configured to easily carry the electrode 1313 by using the up / down drive of the substrate transfer robot or the lower process chamber 1220 So that it is possible to omit a separate maintenance time for cleaning after a long process, thereby increasing the productivity.

At this time. The attachment / detachment unit 1315 of the electrode is completely in close contact with the insulator 1314 for the electrode 1313 by using a partial tapered rotation.

As described above, in the present invention, in the atomic layer deposition, a plurality of unit process chambers for the atomic layer deposition process capable of separating and bonding upper and lower parts are arranged in a stacked manner, and a plurality of process chambers It is possible to simultaneously carry out the atomic layer deposition process in a plurality of process chambers which are realized to have a vacuum chamber for vacuum formation and pressure regulation outside and a minimum space for the optimal process so that the raw material precursor and the reaction precursor Reduce usage and minimize process time to reduce costs and improve productivity. In addition, according to the present invention, the substrate to be atomic layer deposition is completely brought into close contact with the upper process chamber or the lower process chamber in the optimized process chamber, thereby preventing deposition on the back surface of the substrate.

While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. For example, although the operation of the atomic layer deposition apparatus is described by way of example in the embodiment of the present invention, the present invention is equally applicable to PECVD.

Accordingly, the scope of the invention should not be limited by the described embodiments but should be defined by the appended claims.

1100: Vacuum chamber 1200: Process chamber
1010: substrate 1015: substrate support
1017: mask supporting portion 1020: mask
1030: plasma 1101: buffer part
1110: Lower process chamber transfer part 1111: Alignment device part
1112: alignment device auxiliary part 1120: susceptor support part
1202: multi-stage supporting portion 1204:
1210: upper process chamber 1220: lower process chamber
1211: gas exhaust part 1212: gas supply part
1221: base sealing part 1222: additional sealing part
1300: Process module 1312: Diffuser
1313: Electrode 1314: Insulator
1315: Electrode fastening part 1412: Purge gas supply part
1414: Gap insulator 1415: Pressure regulating gas supply part
1416: Displacement attachment unit

Claims (24)

The upper process chamber and the lower process chamber are separated from each other when the substrate to be subjected to the atomic layer deposition process is loaded or unloaded. When the deposition process is performed on the substrate, the upper process chamber And a process chamber in which the lower process chamber is joined to form a closed reaction space,
And a process chamber including a vacuum chamber for holding a space of the process chamber in a vacuum state is stacked in a vertical direction. The upper process chamber and the lower process chamber are separated from each other when the substrate to be subjected to the atomic layer deposition process is loaded or unloaded. When the deposition process is performed on the substrate, the upper process chamber And at least one process chamber in which the lower process chamber is joined to form a closed reaction space,
Wherein at least two process modules including an individual vacuum chamber for holding a space of the process chamber in a vacuum state are laminated in a vertical direction. 3. The method of claim 2,
Further comprising an alignment device for securing and positioning the substrate and the mask precisely before the upper process chamber and the lower process chamber are coupled to each other. The method of claim 3,
The alignment apparatus may further comprise:
An atomic layer deposition apparatus including a mask unit or a control unit capable of controlling the rotation of the mask unit or the substrate unit in the left, right, front, and rear directions using an image information processing (vision) 3. The method of claim 2,
Wherein an electrode for plasma generation is formed on a lower surface of the upper process chamber by an insulator, a contact power supply unit, and a detachable device. 3. The method of claim 2,
Wherein an apparatus section capable of adjusting a displacement according to a pressure is provided in a gas exhausting portion of the upper process chamber to sequentially increase a deposition region by controlling a surface area of the process gas to completely seal the deposition material layer, Deposition apparatus 3. The method of claim 2,
The vacuum chamber includes:
Wherein a vacuum is formed in an outer space of the process chamber or is converted into an atmospheric air, and a maintenance opening / closing unit for each process module is constituted. 3. The method of claim 2,
The vacuum chamber includes:
And a guide part for supporting, loading / unloading or transporting the process chamber to / from the internal space of the vacuum chamber. 3. The method of claim 2,
The vacuum chamber includes:
A fixing means for fixing the upper process chamber, and a transfer means for moving the lower process chamber up and down. 3. The method of claim 2,
Wherein the upper process chamber is fixed to the vacuum chamber and the lower process chamber moves up and down in the vacuum chamber to be coupled to or separated from the upper process chamber. 3. The method of claim 2,
Further comprising a device having a tension control function capable of maintaining an equal bonding force of the entire area when the upper process chamber and the lower process chamber are moved up and down and capable of buffering an excessive bonding force of a specific region. Layer deposition apparatus. 12. The method of claim 11,
The device having a tension adjusting function is formed by a combination of an O-ring, a spring, a C-shaped block having self-elasticity, or a combination of components capable of varying a certain range of external force such as a membrane or a tube having an expanding and contracting function by external pressure Lt; / RTI > 12. The method of claim 11,
And a measuring device such as a load cell or a pressure gauge for measuring an excessive bonding force of a specific portion and maintaining an equal bonding force of the entire area when the upper process chamber and the lower process chamber are coupled by moving them up and down. Wherein the atomic layer deposition apparatus further comprises a function of controlling the tension. 3. The method of claim 2,
A gap block replacement device having a predetermined thickness for adjusting the gap required when the process chamber and the lower process chamber are coupled to each other by moving the process chamber up and down or a membrane capable of expanding and contracting by an external pressure difference between two gaps And the gap can be adjusted according to the pressure control applied to the membrane. 3. The method of claim 2,
The process chamber includes:
A gas supply part for supplying a process gas or a purge gas to the sealed reaction space is provided on one side of the process chamber,
And a gas exhaust part for exhausting the gas supplied to the closed reaction space is provided on the other side of the process chamber. 16. The method of claim 15,
Wherein an electrode for plasma generation is formed at an introduction portion of a gas supply portion into which the process gas is introduced into a sealed reaction space. 16. The method of claim 15,
The gas-
A diffusion space of a V, W, VVV, U shape or a showerhead type diffuser for uniform gas flow inside the upper process chamber to form a process gas in the vertical or horizontal direction on the substrate in the closed reaction space, Or the purge gas is injected. 16. The method of claim 15,
Wherein the process chamber further comprises a heating and temperature control device in the process chamber to prevent condensation or by-products of the process gas or purge gas or exhaust gas. 3. The method of claim 2,
Wherein a supply pipe or an exhaust pipe is used in which the process gas supply unit or the purge gas supply unit or the gas exhaust unit of the process chamber is shared with at least one or more other process chambers. 3. The method of claim 2,
A stepped stepped portion is formed outside the coupling portion of the upper process chamber and the lower process chamber for minimizing the deposition area except for the substrate when the process chamber and the lower process chamber are moved up and down, And supplying a predetermined amount of purge gas to the outside of the substrate to minimize deposition on one side including the sealing portion excluding the substrate. In the process module, at least two vacuum chambers are stacked,
A vacuum chamber is an atomic layer deposition method performed in a multi-atomic atomic layer deposition apparatus having at least one or more process chambers,
A substrate and a mask are loaded in the process chamber; and when the substrate and the mask are aligned and precisely aligned by an alignment device including an image information processing device and the like,
Forming an enclosed reaction space by combining an upper process chamber and a lower process chamber; and performing an atomic layer deposition process for the substrate in the closed reaction space. 3. The method of claim 2,
The upper process chamber and the lower process chamber each mounting the substrate,
And a controller for controlling the temperature of the reaction chamber,
The deposition process being performed simultaneously on the substrate and the substrate mounted on the lower process chamber
And an atomic layer deposition apparatus. 3. The method of claim 2,
The upper process chamber is divided into at least two regions with respect to the substrate
Wherein the atomic layer deposition process unit includes at least two atomic layer deposition processes capable of performing atomic layer deposition processes for each of the plurality of atomic regions, wherein the atomic layer deposition process unit includes a gas supply unit and a gas exhaust unit. 3. The method of claim 2,
The selection of the deposition material or the deposition method or the maintenance of the process chamber may be performed simultaneously or separately for each unit process module including the vacuum chamber. In order to minimize the external influence of each process module, And a buffer space for pressure control and rigidity reinforcement.
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