KR101787825B1 - Film forming apparatus and film forming method - Google Patents

Film forming apparatus and film forming method Download PDF

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KR101787825B1
KR101787825B1 KR1020150087469A KR20150087469A KR101787825B1 KR 101787825 B1 KR101787825 B1 KR 101787825B1 KR 1020150087469 A KR1020150087469 A KR 1020150087469A KR 20150087469 A KR20150087469 A KR 20150087469A KR 101787825 B1 KR101787825 B1 KR 101787825B1
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gas
exhaust
process gas
exhaust path
processing
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KR1020150087469A
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Korean (ko)
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KR20160001653A (en
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쇼헤이 센바
츠토무 사토요시
세이지 다나카
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Abstract

The batch type ALD film formation is performed by suppressing the decrease of the production tack and increasing the use efficiency of the processing gas without increasing the gas supply amount and suppressing the generation of reaction products in the exhaust path. The batch type film forming apparatus 100 includes a plurality of process chambers 15, a gas supply unit 2, an exhaust unit 3, and a control unit 4. The exhaust unit 3 has two exhaust paths corresponding to each of the first process gas and the second process gas and exhaust path switching sections 34 and 35 for switching two exhaust paths. The gas supply unit 2 is controlled so as to be sequentially supplied to each process chamber with a time difference for one process gas when the first process gas and the second process gas are supplied from the gas supply unit 2 to the process chamber 15, And controls the exhaust path switching portions 34 and 35 so as to be exhausted through an exhaust path corresponding to the process gas supplied to each processing chamber 15. [

Figure R1020150087469

Description

FIELD OF THE INVENTION [0001] The present invention relates to a film forming apparatus,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a deposition apparatus and a deposition method for performing batch ALD deposition processing.

In a manufacturing process of a flat panel display (FPD) such as a liquid crystal display or an organic EL display, or a solar cell module, a film forming process or an etching process is performed to form a wiring or the like on a substrate to be processed such as a glass substrate .

The substrate used for the FPD and the like has a large number of substrates on a large area. In addition, the film forming process and the etching process use a plasma, and in order to avoid enlargement and complication, However, it has been proposed that a batch type in which a plurality of substrates are collectively processed with an emphasis on efficiency and throughput (for example, Patent Document 1).

On the other hand, as a film forming method for performing the film forming process, an atomic layer deposition method (ALD method) capable of forming a thin film with good step coverage has been attracting attention. In the ALD method, a plurality of, typically two, processing gases are alternately supplied into a processing vessel in which a substrate to be processed is placed, and the processing gas is deposited on the surface of the substrate to be processed for each atomic layer (or a layer close to the one atomic layer) And a predetermined film is formed by reacting these process gases on a substrate to be processed.

However, as in Patent Document 1, when a processing apparatus in which a plurality of substrates are arranged in parallel in a vertical direction in a large processing container and used for batch ALD film formation on a large-area substrate, It is difficult to uniformly supply the process gas to the surface of a plurality of substrates and uniformly exhaust the process gas, and it is difficult to obtain a uniform film.

Thus, Patent Document 2 proposes that a plurality of processing chambers (processing sub-spaces) are provided so as to respectively correspond to a plurality of substrates, and each processing gas is introduced into the plurality of processing chambers to perform film formation by the ALD method .

Japanese Patent Application Laid-Open No. 1996-8234 Japanese Patent Application Laid-Open No. 2013-030751

However, in recent batch-type ALD film forming apparatuses, in order to improve the efficiency of processing, it is required to increase the number of substrates per single batch and to increase the number of substrates per batch processing. Therefore, It needs to be increased. As a method of increasing the supply amount of the processing gas, it is conceivable to enlarge the gas supply unit to increase the processing gas supply capability, but in this case, the apparatus cost increases. On the other hand, in the case where the gas supply unit can not be made large, it is conceivable to secure the necessary gas supply amount by increasing the supply time of the process gas, but in this case, the production tact is deteriorated. Further, if the supply amount of the processing gas is increased, the utilization efficiency of the processing gas is lowered. In addition, since a plurality of process gases flow in the exhaust path, a plurality of process gases are mixed therein to produce reaction products. When the supply amount of the process gas is large, a large amount of reaction products are generated, .

SUMMARY OF THE INVENTION The present invention has been made in view of such circumstances, and it is an object of the present invention to provide an exhaust gas purifying apparatus which can suppress the decrease of the production tack without increasing the gas supply amount and increase the utilization efficiency of the process gas, , And a deposition method and a deposition method capable of performing deposition ALD deposition.

In order to solve the above problems, a first aspect of the present invention is a batch type film forming apparatus for forming a predetermined film on a plurality of substrates to be processed by sequentially switching a plurality of process gases, A gas supply unit for sequentially supplying a plurality of process gases to the plurality of process chambers, an exhaust unit for exhausting the plurality of process chambers, and a controller for controlling the supply of the process gas to and from the plurality of process chambers, Wherein the exhaust unit includes a plurality of exhaust paths corresponding to each of the plurality of process gases and an exhaust path switching portion for switching the exhaust path, To the processing chamber, the processing gas is supplied to the processing chamber in such a manner that the processing gas is sequentially supplied to the processing chamber Control units, and also provide a film-forming apparatus characterized in that the control unit switching the exhaust passage to the exhaust via the exhaust path corresponding to the exhaust upon by the exhaust unit, the process gas supplied to the processing chamber.

In the first aspect, the gas supply unit supplies a purge gas for purifying the inside of the plurality of processing chambers, after supplying at least one processing gas, before supplying the next processing gas , The control unit may control the exhaust path switching unit to switch the exhaust path while supplying the purge gas.

A second aspect of the present invention is a deposition type deposition apparatus for depositing a predetermined film on a plurality of substrates to be processed by alternately switching the first process gas and the second process gas to supply the substrates to be processed one by one A gas supply unit for alternately supplying a first process gas and a second process gas to the plurality of process chambers, an exhaust unit for exhausting the plurality of process chambers, a process unit for processing the plurality of process chambers And a control unit for controlling the supply and exhaust of the gas, wherein the exhaust unit includes two exhaust paths corresponding to the first process gas and the second process gas, and an exhaust path for switching the two exhaust paths Wherein the control unit controls the gas supply unit to supply the first process gas and the second process gas to the process chamber, The gas supply unit is controlled so as to be sequentially supplied to the processing chamber at a time difference and the exhaust path switching unit is controlled to be exhausted through an exhaust path corresponding to the process gas supplied to each process chamber at the time of exhausting by the exhaust unit And a film forming apparatus.

In the second aspect, it is preferable that the gas supply unit be configured to supply at least the first process gas, after supplying the first process gas, before supplying the second process gas, and after supplying the second process gas, The control unit may supply the purge gas for purging the inside of the processing chamber and the control unit may control the exhaust path switching unit to switch the exhaust path while supplying the purge gas. The gas supply unit may further include a first process gas supply pipe for supplying the first process gas to the plurality of process chambers, a second process gas supply pipe for supplying the second process gas to the plurality of process chambers, A first supply valve provided in the first process gas supply pipe and a second supply valve provided in the second process gas supply pipe, wherein the control unit controls the opening and closing operations of the first supply valve and the second supply valve And the switching of the exhaust path by the exhaust path switching portion is controlled by interlocking the exhaust path switching portion.

Further, in the second aspect, the exhaust path switching portion may be configured to include an exhaust control valve that is provided in each of the two exhaust paths and that can be opened and closed, and a configuration in which a switching valve provided in the branch portion of the two exhaust paths .

In the first and second aspects of the present invention, each of the process chambers is formed in a region surrounded by a mount for mounting a substrate to be processed and a cover for covering the substrate on the mount table, , And arranged vertically in the processing container.

A third aspect of the present invention is summarized as a substrate processing apparatus including a plurality of processing chambers each containing a substrate to be processed one by one, a gas supply unit for sequentially supplying a plurality of process gases to the plurality of process chambers, and an exhaust unit for exhausting the plurality of process chambers Wherein a plurality of exhaust paths corresponding to each of the plurality of process gases are used as the exhaust unit so as to form a predetermined film on the substrate, Wherein the processing gas is supplied from the supply unit to the processing chamber one by one at a time while supplying the processing gas to the processing chambers with a time difference therebetween, And the exhaust path is switched so as to be exhausted through the exhaust path.

In the third aspect, a purge gas for purging the inside of the plurality of processing chambers from the gas supply unit is supplied after at least one processing gas is supplied and before the next processing gas is supplied, It is possible to switch the exhaust path while supplying the purge gas.

According to a fourth aspect of the present invention, there is provided a plasma processing apparatus comprising: a plurality of processing chambers each containing a substrate to be processed one by one; a gas supply unit for alternately supplying a first process gas and a second process gas to the plurality of process chambers; In a batch type film forming apparatus having an exhaust unit for exhausting a predetermined process gas, a process for depositing a predetermined film on a substrate to be processed, the process comprising the steps of: When the first process gas and the second process gas are supplied from the gas supply unit to the process chamber using two exhaust paths, one process gas is sequentially supplied to the process chambers with a time difference And the exhaust path is switched so as to be exhausted through the exhaust path corresponding to the process gas supplied to each process chamber at the time of exhausting by the exhaust unit The film forming method comprising the steps of:

In the fourth aspect of the present invention, it is preferable that, before supplying the first process gas, before supplying the second process gas, and after supplying the second process gas, and before supplying the first process gas, The purge gas for purging is supplied and the exhaust path can be switched while the purge gas is being supplied.

In the present invention, by employing both the time-division supply method and the switching of the exhaust path by the process gas in the batch type ALD film formation process, the supply amount of gas is not increased, So as to increase the utilization efficiency of the process gas and to suppress the generation of reaction products in the exhaust path.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic structural view showing a film forming apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic view showing a gas supply system and an exhaust system of a conventional single-sheet ALD film formation apparatus,
3 is a schematic diagram showing a gas supply system and an exhaust system of a conventional batch type ALD film formation apparatus,
4 is a timing chart showing the timing of opening and closing the valve when performing the sheet-type ALD film formation and the timing of opening and closing the valve when performing the conventional batch type ALD film formation,
FIG. 5 is a timing chart showing the timing of opening and closing the valve when performing the conventional single-film ALD film formation and the opening and closing timing of the valve when performing the time-division processing in the conventional batch ALD film forming apparatus,
6 is a schematic diagram showing a gas supply system and an exhaust system of a film formation apparatus according to an embodiment of the present invention,
7 is a timing chart showing the timing of opening and closing the valve when performing the sheet-type ALD film formation and the timing of opening and closing the valve when performing the batch ALD film forming according to the present embodiment,
8 is a schematic view showing another example of the exhaust unit;

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

BRIEF DESCRIPTION OF DRAWINGS FIG. 1 is a schematic structural view showing a film forming apparatus according to an embodiment of the present invention; FIG. This film forming apparatus 100 is configured as a batch type ALD film forming apparatus for forming a predetermined film by ALD on a plurality of substrates to be processed. As the substrate to be processed, a rectangular substrate having a large area used as a glass substrate for an FPD or a glass substrate for a solar cell is suitable, but the present invention is not limited thereto.

The film forming apparatus 100 includes a processing unit 1 for performing a film forming process in an independent process chamber for each of a plurality of substrates S to be processed and a gas supply unit for supplying gas to each processing chamber in the processing unit 1 A unit 2, an exhaust unit 3 for exhausting the inside of each treatment chamber in the treatment unit 1, and a control unit 4. [

The processing unit 1 includes a processing container 11 for accommodating a plurality of substrates S and a plurality of processing sections 12 (not shown) for forming a processing chamber 15 corresponding to each of the plurality of substrates in the processing vessel 11 ). A plurality of processing sections 12 (processing chambers 15) are arranged in the vertical direction in the processing vessel 11. 1, four processing units 12 (processing chambers 15) are depicted for the sake of convenience. However, the number of processing units 12 (processing chambers 15), that is, the number of substrates S to be processed at one time Is not limited to this.

Each processing unit 12 has a loading table 13 for loading the target substrate S and a cover 14 for covering the target substrate S on the loading table 13, And the cover 14, as shown in Fig. At least one of the mount table 13 and the cover 14 is configured to be movable up and down and the mount table 13 and the cover 14 are separated from each other by a transfer mechanism ) Of the substrate S to be processed can be carried out. The transport mechanism may transport the plurality of target substrates S collectively, or may transport the substrates S one by one. A sealing member (not shown) is provided between the mounting table 13 and the cover 14 so that the airtight processing chamber 15 is formed with the cover 14 closed. Although not shown, the side wall of the processing vessel 11 is provided with a loading / unloading port for loading / unloading the target substrate S, which can be opened / closed by a gate valve.

A heater (not shown) is built in the mounting table 13 and the substrate S on the mounting table 13 is heated to a desired processing temperature for film formation at the time of film formation.

The gas supply unit 2 includes a first process gas supply source 21 for supplying a first process gas, a second process gas supply source 22 for supplying a second process gas, a purge gas supply source A first process gas supply pipe 24 for supplying a first process gas into each process chamber 15 from the first process gas supply source 21; A purge gas supply pipe 26 for supplying a purge gas into each processing chamber 15 from the purge gas supply source 23; and a second process gas supply pipe 25 for supplying a second process gas into the process chamber 15, A first supply valve 27 provided in the process gas supply pipe 24, a second supply valve 28 provided in the second process gas supply pipe 25, and a third supply device 27 provided in the purge gas supply pipe 26, And a valve (29). The first process gas supply pipe 24 includes a main pipe 24a extending from the first process gas supply source 21 and a branch pipe 24b branched from the main pipe 24a and connected to each process chamber 15, The second process gas supply pipe 25 has a main pipe 25a extending from the second process gas supply source 22 and a branch pipe 25b branched from the main pipe 25a and connected to each process chamber 15. [ The purge gas supply pipe 26 has a main pipe 26a extending from the purge gas supply source 23 and a branch pipe 26b branched from the main pipe 26a and connected to each process chamber 15 26b. The first supply valve 27, the second supply valve 28 and the third supply valve 29 are provided in the branch pipes 24b, 25b and 26b, respectively. The branch pipes 24b, 25b and 26b are connected to one side wall of the cover 14 constituting the process chamber 15. [

The gas supply unit 2 alternately intermittently opens and closes the first supply valve 27 and the second supply valve 28 so that the first process gas and the second process gas are alternately intermittently supplied to the respective processing chambers 15). At this time, the first process gas and the second process gas are supplied at all times and are supplied to the process chamber 15 in a pulse shape by opening and closing the first supply valve 27 and the second supply valve 28, The process gas that has not been supplied to the processing chamber 15 flows into the exhaust system without passing through the processing chamber 15 by a bypass piping (not shown). During the film forming process, the third supply valve 29 is always opened, and purge gas is always supplied into the process chamber 15. In each treatment chamber 15, a period in which the first supply valve 27 is opened to supply the first process gas and a period in which the second supply valve 28 is opened to supply the second process gas During the period, the first supply valve 27 and the second supply valve 28 are closed, and only the purge gas is supplied to purge each processing chamber 15. Further, when the first supply valve 27 or the second supply valve 28 is opened to supply the first process gas or the second process gas, the purge gas also serves as a carrier gas for these process gases. Although not shown, a flow controller (not shown) is provided in the first process gas supply pipe 24, the second process gas supply pipe 25, and the purge gas supply pipe 26.

The exhaust unit 3 includes a plurality of exhaust pipes 31 connected to the respective process chambers 15 and a first branch pipe 32 and a second branch pipe 33 branched from the plurality of exhaust pipes 31, A first exhaust valve 34 and a second exhaust valve 35 respectively provided in the first branch pipe 32 and the second branch pipe 33 and a second exhaust valve 34 connected to the first branch pipe 32, The first common exhaust pipe 36 and the second common exhaust pipe 37 are connected to the first common exhaust pipe 36 and the second branch pipe 33 and the first common exhaust pipe 36 and the second common exhaust pipe 37, The first vacuum pump 38 and the second vacuum pump 39 provided in the first common exhaust pipe 36 and the second common exhaust pipe 37 and the first vacuum pump 38 and the second vacuum pump 39 And a second exhaust gas treatment facility 41 provided on the downstream side of the first exhaust gas treatment facility 40 and the second exhaust gas treatment facility 41, respectively. An automatic pressure control valve (APC) 42 is provided in each exhaust pipe 31. The exhaust pipe 31 is connected to a side wall of the cover 14 constituting the process chamber 15 on the side opposite to the side wall to which the branch pipes 24b, 25b and 26b are connected.

The first branch piping 32 and the first common exhaust piping 36 constitute an exhaust path of the first process gas and the second branch piping 33 and the second common exhaust piping 37 constitute exhaust paths of the second process gas Thereby constituting an exhaust path.

The first exhaust gas treatment facility 40 and the second exhaust gas treatment facility 41 apply treatment for detoxifying the harmful components in the exhaust gas and can be carried out in a conventional manner such as a heating catalytic type, Can be employed. A heater (not shown) is provided around the exhaust pipe 31, thereby heating the exhaust pipe 31 to suppress the generation of unnecessary deposits. The first and second branch pipes 32 and 33 and the first and second common exhaust pipes 36 and 37 may be provided with heaters.

The first vacuum pump 38 and the second vacuum pump 39 are provided with a front stage vacuum pump capable of high vacuum exhaustion such as a mechanical booster pump or a turbo pump and a rough vacuum pump such as a dry pump for setting the back pressure of the front stage vacuum pump to a predetermined degree of vacuum And a rear stage vacuum pump comprising a roughing pump can be suitably used.

The first exhaust valve 34 and the second exhaust valve 35 function as an exhaust path switching portion for switching the exhaust path and open one of the first exhaust valve 34 and the second exhaust valve 35, So that the exhaust gas can be selectively flown into any one of the first branch pipe 32 and the second branch pipe 33. Specifically, when the first exhaust valve 34 is opened and the second exhaust valve 35 is closed, the first branch pipe 32 and the first common exhaust pipe 36 are selected as the exhaust path, When the second exhaust valve 35 is opened and the first exhaust valve 34 is closed by the first vacuum pump 38 and the second branch pipe 33 and the second exhaust pipe 34 are closed, The common exhaust pipe 37 is selected and exhausted by the second vacuum pump 39 through them. When the purge gas is exhausted, both of the first exhaust valve 34 and the second exhaust valve 35 are opened when the respective process gases are sufficiently removed from the processing chamber 15 and the exhaust pipe 31 So that exhaust gas can be exhausted through both exhaust paths.

The control unit 4 is for controlling each component of the film forming apparatus 100 such as a valve, a vacuum pump, and a heater, and has a microprocessor (computer). The control unit 4 stores a process recipe as a program for executing a predetermined process in the film formation apparatus 100 in a storage medium therein so that an arbitrary process recipe is called and a predetermined process .

Particularly, the control unit 4 alternately intermittently opens the first supply valve 27 and the second supply valve 28 corresponding to the respective processing chambers 15 during film formation by the ALD method, Gas and the second process gas are sequentially and alternately supplied into the respective process chambers 15. The number of repetitions at this time is arbitrary depending on the material to be formed and the film thickness, but is usually several hundred cycles or more. At this time, when the first process gas and the second process gas are supplied to the respective process chambers 15, a plurality of first supply valves 27 are provided so that one process gas is sequentially supplied to the process chambers 15 with a time lag, And the second supply valve 28 (hereinafter, referred to as a time division supply method). Further, the third supply valve 29 is normally opened during the film forming period to control the purge gas to flow at all times. The first supply valve 27 and the second supply valve 28 are closed during the period between the opening of the first supply valve 27 and the opening of the second supply valve 28 Only the purge gas flows, and the processing chamber 15 is purged.

The control unit 4 controls the first exhaust valve 34 and the second exhaust valve 35 to switch the exhaust path in accordance with the process gas supplied from the gas supply unit 2 in each process chamber 15, And controls the switching of the exhaust path. That is, when the first supply valve 27 is opened to supply the first process gas in each process chamber 15, the control unit 4 opens the first exhaust valve 34, The valve 35 is closed so that the exhaust gas flows to the first branch pipe 32 side while the second supply valve 28 is opened to supply the second process gas. The second exhaust valve 35 is opened to control the exhaust gas to flow to the second branch pipe 33 side. In other words, control of opening and closing of the first exhaust valve 34 and the second exhaust valve 35 functioning as an exhaust path switching section is interlocked with the opening / closing operation of the first supply valve 27 and the second supply valve 28 do. It is preferable that the timing for switching the exhaust path between the first branch pipe 32 and the second branch pipe 33 is a period during which the inside of the process chamber 15 is purged.

Next, the operation of the film forming apparatus constructed as described above will be described.

First, a plurality of substrates S to be processed are carried into the processing container 11 and mounted on the mounting table 13 of each processing part 12, and the purge gas is supplied from the purge gas supply source 23, The inside of each processing chamber 15 is exhausted by the exhaust unit 3, the inside of each processing chamber 15 is adjusted to a predetermined pressure, and ALD film formation is started.

The first supply valve 27 and the second supply valve 28 corresponding to the respective processing chambers 15 are alternately opened intermittently so that the first processing gas And the second process gas are alternately intermittently performed. In the film forming period, the third supply valve 29 is always opened to allow the purge gas to flow at all times, and the first supply A purge step for purging the inside of the processing chamber 15 is performed during a period between the period in which the valve 27 is opened and the period in which the second supply valve 28 is opened. On the other hand, when the first process gas is being supplied by opening the first supply valve 27, the first exhaust valve 34 is opened and the second exhaust valve 35 is exhausted The first exhaust valve 34 is closed while the second process gas is being supplied by opening the second supply valve 28 so that the exhaust gas flows to the first branch pipe 32 side, The exhaust valve 35 is opened to allow the exhaust gas to flow toward the second branch pipe 33 side.

Such an ALD film can be formed, for example, by using trimethyl aluminum (TMA) as a first process gas, an oxidizing agent such as H 2 O as a second process gas, and an inert gas such as N 2 as a purge gas, , H 2 O is adsorbed by a process of adsorbing TMA by a process of supplying a first process gas, performing a purge process, and then supplying a second process gas. By these reactions, (Al 2 O 3 ) unit film having a thickness of a predetermined thickness (for example, a layer having a thickness close to that of the Al film) and then performing a purge step is performed a predetermined number of times to form an alumina film having a predetermined film thickness.

At this time, in the present embodiment, as described below, the switching between the time division supply method and the exhaust path is performed during batch ALD film formation processing. Thus, a large effect that can not be obtained by the conventional batch type ALD film forming apparatus can be obtained.

To explain this point in detail, a conventional single-sheet ALD film formation and a conventional batch-type film formation will be described first.

FIG. 2 is a schematic view showing a gas supply system and an exhaust system of a conventional single sheet type ALD film formation apparatus, FIG. 3 is a schematic view showing a gas supply system and an exhaust system of a conventional batch type ALD film formation apparatus, Fig. 5 is a timing chart showing the timing of valve opening and closing at the time of executing the conventional one-shot ALD film formation and the timing of opening and closing of the valve at the time of executing the conventional batch ALD film formation. And the opening and closing timings of the valves when time-division processing is performed in the conventional batch type ALD film forming apparatus. 2 and 3, a purge gas supply system and an automatic pressure control valve (APC) are omitted for convenience sake. The arrangement type film forming apparatus of Fig. 3 shows a case in which four processing chambers are provided , A plurality of treatment chambers, a gas supply valve, an exhaust valve, and the like. In the timing charts of Figs. 4 and 5, three cycles of ALD film formation are shown.

As shown in FIG. 2, the conventional single-sheet ALD film forming apparatus is provided with a first process gas supply source 21 and a second process gas supply source 22, respectively, for a single process chamber 15, The first process gas and the second process gas are supplied to the process chamber 15 via the pipe 24 and the second process gas supply pipe 25. At this time, by alternately intermittently opening and closing the first supply valve 27 and the second supply valve 28, the first process gas and the second process gas are alternately supplied into the process chamber 15 intermittently. The exhaust gas in the treatment chamber 15 is exhausted by the vacuum pump 53 via the exhaust pipe 51, and the exhaust gas is processed by the exhaust gas treatment facility 54. The exhaust pipe 51 is provided with an exhaust valve 52, and is opened during the film forming process.

4 (a), in the conventional single-film ALD film forming apparatus, while continuously supplying purge gas to the processing chamber 15 during the ALD film formation period, the first supply valve 27 and the second The supply valve 28 is alternately opened and closed intermittently. Thereby, the step (S1) of supplying the first process gas and the step (S2) of supplying the second process gas are alternately performed intermittently and the first supply valve 27 and the second supply During the period in which the valve 28 is closed, only the purge gas is supplied, and the first purging step (S3) and the second purging step (S4) for purging the inside of the processing chamber (15) are performed. Then, the alternate supply of the first process gas and the second process gas is repeated, for example, several hundred cycles or more, until the desired film thickness can be obtained.

On the other hand, the conventional batch type ALD film forming apparatus shown in Fig. 3 has a first processing chamber 15-1, a second processing chamber 15-2, a third processing chamber 15-3, a fourth processing chamber 15-4 The first process gas supply source 21 and the second process gas supply source 22 are connected to the first process gas supply pipe 24 and the second process gas supply pipe 25 The first process gas and the second process gas are supplied. The first process gas supply pipe 24 is connected to the main pipe 24a extending from the first process gas supply source 21 and the first process chamber 15-1 to the fourth process chamber 15 The second process gas supply line 25 has branch pipes 24b-1, 24b-2, 24b-3 and 24b-4 connected to the first process gas supply source 22, 25b-2, 25b-3, 25b-2 branched from the main piping 25a and connected to the first process chamber 15-1 to the fourth process chamber 15-4 -4). At this time, the branch pipes 24b-1 to 24b-4 corresponding to the first process chamber 15-1 to the fourth process chamber 15-4 are connected to the first supply valves 27-1, 27-2, 27- And the branch pipes 25b-1 to 25b-4 corresponding to the first process chamber 15-1 to the fourth process chamber 15-4 are provided with the second supply valves 28- 27-2, 27-3, 27-4 and the second supply valves 28-1, 28-2, 28-3, 28-4, 28-2, 28-3, 2, 28-3, and 28-4 are alternately intermittently opened and closed in synchronism with each other so that the first process gas and the second process gas are alternately intermittently supplied to the first process chamber 15-1 through the fourth process chamber 15-4. Exhaust pipes 51-1 to 51-4 are connected to the first process chamber 15-1 to the fourth process chamber 15-4 respectively and these exhaust pipes 51-1 to 51-4 are connected to a common exhaust pipe And the respective processing chambers are exhausted through the exhaust pipes 51-1 to 51-4 and the common exhaust pipe 55 by the vacuum pump 53 connected to the common exhaust pipe 55 , And the exhaust gas is processed by the exhaust gas treatment facility 54. The exhaust pipes 51-1 to 51-4 are provided with exhaust valves 52-1 to 52-4, respectively, and are opened during the film forming process.

In this conventional batch type ALD film forming apparatus, as shown in FIG. 4B, during the period of ALD film formation, the first supply valves 27-1, 27-2, 27-3, and 27-4 The second supply valves 28-1, 28-2, 28-3, and 28-4 are intermittently opened and closed in synchronization with each other. During the ALD film formation period, the purge gas is supplied at all times. Thereby, the step (S1) of supplying the first process gas into the first process chamber (15-1) to the fourth process chamber (15-4) and the process (S2) of supplying the second process gas are alternately performed intermittently A first purge step S3 for purifying the inside of the processing chamber 15 is performed while only the purge gas is supplied during the period in which the first supply valve 27 and the second supply valve 28 are closed between them, , And a second purge step (S4) are performed. The exhaust valves 52-1 to 52-4 are opened during the film forming process and the exhaust pipes 51-1 to 51-4 are disposed in the first process chamber 15-1 to the fourth process chamber 15-4, And the common exhaust pipe 55 as shown in Fig.

At this time, the required supply amount of the processing gas is increased by the amount of the processing chamber as compared with the single-layer film forming apparatus. In addition, in recent years, there is a tendency to increase the size of the substrate and the number of substrates to be processed at one time, thereby significantly increasing the required amount of the processing gas supplied at one time. Correspondingly, in the example of FIG. 4 (b), the supply time of the process gas is increased to secure the required gas supply amount. 4 (a) and 4 (b), when the supply time of the first process gas and the second process gas is increased, the production tack (throughput) becomes worse. Moreover, the deterioration of these production tacts is accumulated as many as the number of cycles of ALD.

In order to suppress deterioration of the production tact, it is necessary to increase the raw material gas supply capability. In this case, however, the apparatus cost increases in order to enlarge the gas supply unit, and at the same time, .

During the ALD film formation, the first process gas and the second process gas are alternately supplied in pulse form to the process chamber. The process gas is supplied to the process chamber in a time zone (pulse ON) used for film formation and a purge process (Pulse OFF) in which the process gas is not supplied to the process chamber and is not used for film formation. On the other hand, there are a variety of methods for supplying the process gas depending on the type of the film forming raw material and the like. For example, there are a method of supplying the process gas by controlling the flow rate of the gas raw material as it is with a mass flow controller (MFC) A bubbling method of supplying a process gas by pressurization, a method of activating a source gas by a plasma mechanism such as an ozonizer and supplying the process gas as a process gas, and the like. In any of these methods, however, It is necessary to always supply the process gas from the gas supply unit at the time of executing the ALD process, and the time zone (pulse OFF) not used for film formation must be disposed of without passing the process gas through the process chamber. This waste amount increases as the supply amount of the processing gas increases, and the utilization efficiency of the processing gas decreases when the raw material gas supply capability is increased.

In the conventional batch type ALD film forming apparatus, in order to make the supply ability of the processing gas equal to that of the conventional single-layer ALD film forming apparatus, the first processing chamber 15-1 to the fourth processing chamber 15-4 are subjected to the first processing The time-division supply system in which the supply timings of the first process gas and the second process gas are set so as not to overlap with each other is effective for supplying the gas and the second process gas. 5 (b), the first supply valves 27-1, 27-2, 27-3, and 27-4 are sequentially opened to supply the first process gas 28-2, 28-3, 28 (28-1, 28-2, 28-3, 28-3, 28-3, 28-2, 28-3, 4) are sequentially opened to supply the second process gas (S2) to the first process chamber (15-1) to the fourth process chamber (15-4) sequentially with a time lag, and these processes are alternately repeated do.

However, when the conventional batch type ALD film forming apparatus is used to perform the time division supply method, as shown in Fig. 5B, when one processing gas is supplied to each processing chamber, It is impossible to supply the next process gas until the process gas is completely supplied to all the process chambers and the time-division supply of the first process gas and the time-division supply of the second process gas Since it is necessary to empty a certain amount of time, the production tact is remarkably deteriorated, and the deterioration of the production tact is accumulated by the number of cycles of the ALD. 4 (b) and FIG. 5 (b), the deterioration of the production tact at this time is more remarkable than in the case of not performing the time division feeding method in the conventional batch type ALD film forming apparatus. Further, as the production tack is deteriorated in this manner, the amount of the waste gas to be treated is also increased.

In this way, the following process gas is not supplied until the supply of the process gas to all the process chambers is completed at the time of the supply of the process gas once, and the time-division supply of the first process gas and the time- Is to prevent reaction products from being produced by mixing the first process gas and the second process gas in the exhaust path.

However, since the conventional batch type ALD film forming apparatus has only one exhaust path, even if such a countermeasure is taken, it is inevitable that the other process gas is supplied while the one process gas remains, Regardless of the manner in which the process gas is supplied, the reaction product inevitably occurs. The reaction product in the exhaust path increases with an increase in the supply amount of the processing gas, and it becomes pulverized and clogs the exhaust pipe, or adversely affects the valve and the pump, and the maintenance cycle deteriorates. Further, the valve and the pump are shortened.

Thus, in the present embodiment, in the batch type ALD film forming apparatus, the required supply amount of the processing gas per hour is made equal to that of the single-layer ALD film forming apparatus, and the utilization efficiency of the production tack and the processing gas is not lowered extremely, The generation of the reaction product in the batch type ALD film formation can be suppressed and batch type ALD film formation can be performed.

6 and 7, the film forming process by the film forming apparatus of the present embodiment will be described in detail in comparison with the film forming process in the conventional single sheet type ALD film forming apparatus and the conventional batch type ALD film forming apparatus .

FIG. 6 is a schematic view showing the gas supply system and the exhaust system of the film forming apparatus according to the present embodiment. FIG. 7 is a timing chart showing the timing of valve opening and closing when performing the sheet- And timing of valve opening and closing. 6 shows a case where the purge gas supply system and the automatic pressure control valve APC are omitted and four processing chambers are provided and a plurality of processing chambers, a gas supply valve, an exhaust valve Different signs are given. The other parts are denoted by the same reference numerals as those in Fig. In the timing chart of Fig. 7, three cycles of ALD film formation are shown as in Figs. 4 and 5.

As shown in Fig. 6, the film forming apparatus of the present embodiment is different from the conventional batch type ALD film forming apparatus of Fig. 3 in that there are two exhaust paths. That is, the gas supply system is the same as that of Fig. 3, but the exhaust pipes 31-1, 31-2, 31-3, 31-4 (31-4) connected to the first process chamber 15-1 to the fourth process chamber 15-4 Branched to the first branch pipes 32-1, 32-2, 32-3, and 32-4 and the second branch pipes 33-1, 33-2, 33-3, and 33-4, The first branch pipes 32-1 to 32-4 are respectively provided with first exhaust valves 34-1, 34-2, 34-3 and 34-4 and the second branch pipes 33-1 to 33-4 -4 are provided with second exhaust valves 35-1, 35-2, 35-3, and 35-4, respectively.

In the film forming apparatus of the present embodiment, as shown in Fig. 7 (b), the first supply valves 27-1, 27-2, 27-3, and 27-4 are sequentially opened for the first time, The process S1 for supplying the process gas is sequentially performed to the first process chamber 15-1 to the fourth process chamber 15-4 with a time difference therebetween and then the second supply valves 28-1 and 28-2 , 28-3 and 28-4 are sequentially opened to supply the second process gas (S2) to the first process chamber (15-1) to the fourth process chamber (15-4) sequentially And a time-division feeding method in which these are alternately repeated is adopted. The period between these processes is a purge step (S3, S4) in which only the purge gas is supplied and the process chamber is purged. When the first process gas is supplied while the first supply valves 27-1 to 27-4 are opened to exhaust the first process chamber 15-1 to the fourth process chamber 15-4, The first exhaust valves 35-1 to 35-4 are closed while the first exhaust valves 34-1 to 34-4 are opened and the exhaust gas is exhausted from the first branch pipes 32-1 to 32-4 When the second supply valves 28-1 to 28-4 are opened to supply the second process gas, the first exhaust valves 34-1 to 34-4 are opened, And the second exhaust valves 35-1 to 35-4 are opened to allow the exhaust gas to flow toward the second branch pipes 33-1 to 33-4 (the other exhaust path side). This switching of the exhaust path is carried out during the purge steps S3 and S4.

Thus, by providing two exhaust paths for each processing chamber, one exhaust path can be used for exhausting the first process gas and the other exhaust path can be used for exhausting the second process gas, The mixing of the first process gas and the second process gas in the path can be suppressed to a minimum, so that the process gas supply and exhaust process to each process chamber can be performed independently of other process chambers. For this reason, in the time division feeding method, for example, when the second process gas is supplied after the first process gas is supplied, as in the conventional batch ALD film forming apparatus, until the supply of the first process gas to all process chambers is completed The second process gas can not be supplied, and the supply times of both process gases may overlap in a plurality of process chambers. It is also not necessary to provide a certain time between the time-division supply of the first process gas and the time-division supply of the second process gas. Also, since it is a time division supply method, the supply capacity of the processing gas may be equal to that of the sheet-type ALD film forming apparatus.

Therefore, as shown in FIG. 7B, the first process gas and the second process gas can be supplied to the respective processing chambers at the same timing as the single-layer ALD film formation process of FIG. 7A, The deterioration of the production tact with respect to the single-piece type is only the time accompanying the initial time-sharing and is not accumulated, so that the deterioration of the production tact can be greatly suppressed as compared with the case of FIG. 4 (b) or FIG. 5 (b). In addition, the number of pulses ON per time increases and the pulse OFF time decreases, as compared with FIG. 4B and FIG. 5B. Further, since the supply amount of the process gas is the same as that of the single film deposition apparatus, The waste amount of the process gas is reduced, and the utilization efficiency of the process gas can be increased. In addition, since the exhaust gas is classified using different exhaust paths corresponding to the processing gas supplied to the processing chamber, it is possible to effectively suppress the production of reaction products by mixing the two processing gases in the exhaust path, It is possible to prevent deterioration.

Before and after the start of the ALD film formation, the first exhaust valves 34-1 to 34-4 (the first exhaust valve 34 in Fig. 1) and the second exhaust valves 35-1 to 35-4 (The second exhaust valve 35 in Fig. 1) may be opened and exhausted from both exhaust passages to obtain a higher exhaust performance. In the case where it is necessary to increase the amount of exhaust during the purge steps S3 and S4 even during the ALD film formation, the respective process gases are supplied to the process chambers 15-1 to 15-4 ) And the exhaust pipes 31-1 to 31-4 (the exhaust pipe 31 in Fig. 1), the first exhaust valves 34-1 to 34-4 and the first exhaust valves 34-1 to 34-4, Both of the two exhaust valves 35-1 to 35-4 may be opened and exhausted from both of the exhaust paths. Further, in order to increase the effect of sorting the exhaust path and enhance the effect of preventing mixing of the first process gas and the second process gas, an inert gas such as N 2 gas is supplied to an exhaust path not used for exhaust, The pressure may be relatively increased. As the first exhaust valves 34-1 to 34-4 and the second exhaust valves 35-1 to 35-4, a sealing material such as an O-ring is preferably used as the opening / closing operation mechanism and the durability against sealing An unused conductance variable valve may be used. Most of the exhaust gas (process gas) flows to the intended exhaust path even if the valve does not use such a sealant, so that a desired effect can be obtained.

As described above, according to the present embodiment, both of the time division supply method and the switching of the exhaust path by the process gas are adopted in the batch type ALD film formation process, so that the gas supply amount is not increased, And the use efficiency of the process gas is increased to suppress the generation of reaction products in the exhaust path.

In addition, the present invention is not limited to the above-described embodiment, but can be modified in various ways. For example, in the above-described embodiment, there has been shown an example in which the exhaust passage is switched by opening and closing these valves by using an exhaust valve provided in each of the two branch pipes as the exhaust passage switching portion for switching the exhaust passage. However, As shown in Fig. 8, a single switching valve (three-way valve) 45 is provided at the branching portion between the first branch pipe 32 and the second branch pipe 33 as the exhaust passage switching portion of each process chamber It is also good. This makes it possible to reduce the number of valves.

In the above embodiment, the two process gases are alternately supplied. However, the number of the process gases to be supplied is not limited. The present invention is applicable to a case where a plurality of process gases are supplied in a time-division manner. And the exhaust gas flow path may be switched according to the process gas.

The substrate to be processed is not particularly limited as long as ALD film formation is performed on a substrate for FPD or a semiconductor wafer.

1: processing unit 2: gas supply unit
3: exhaust unit 4: control unit
11: Processing vessel 12:
13: mounting table 14: cover
15, 15-1, 15-2, 15-3, and 15-4:
21: first process gas supply source 22: second process gas supply source
23: purge gas supply source 24: first process gas supply pipe
25: second process gas supply pipe 26: purge gas supply pipe
27, 27-1, 27-2, 27-3, 27-4: the first supply valve
28, 28-1, 28-2, 28-3, 28-4: the second supply valve
29: Third supply valve
31, 31-1, 31-2, 31-3, 31-4: exhaust pipe
32, 32-1, 32-2, 32-3, 32-4: First branch piping
33, 33-1, 33-2, 33-3, 33-4: second branch piping
34, 34-1, 34-2, 34-3, 34-4: a first exhaust valve
35, 35-1, 35-2, 35-3, 35-4: the second exhaust valve
36: first common exhaust pipe 37: second common exhaust pipe
38: first vacuum pump 39: second vacuum pump
40: first exhaust gas treatment facility 41: second exhaust gas treatment facility
42: Automatic pressure control valve 45: Switching valve
100: film forming apparatus S: substrate to be processed

Claims (12)

A batch type film forming apparatus for sequentially switching and supplying a plurality of process gases to form a predetermined film on a plurality of substrates to be processed,
A plurality of processing chambers for receiving the substrates to be processed one by one,
A gas supply unit for sequentially supplying a plurality of process gases to the plurality of process chambers,
An exhaust unit for exhausting the plurality of processing chambers,
And a control unit for controlling supply and exhaust of process gas to and from the plurality of process chambers,
The exhaust unit includes a plurality of exhaust paths corresponding to each of the plurality of process gases and an exhaust path switching portion for switching the exhaust path,
Wherein the control unit controls the gas supply unit so as to sequentially supply one process gas to each process chamber with a time difference when the process gas is supplied from the gas supply unit to the process chamber, Controls the exhaust path switching unit so that the exhaust gas is exhausted through an exhaust path corresponding to the process gas supplied to each process chamber,
Wherein the gas supply unit supplies a purge gas for purifying the inside of the plurality of processing chambers after supplying at least one processing gas and before supplying the next processing gas,
Wherein the control unit controls the exhaust path switching unit to switch the exhaust path while supplying the purge gas,
Wherein the control unit is configured to exhaust the exhaust gas from only the exhaust path corresponding to the one process gas when switching the exhaust path and then exhaust both the exhaust path corresponding to the one process gas and the exhaust path corresponding to the next process gas The control unit controls the exhaust path switching unit to exhaust the exhaust gas from only the exhaust path corresponding to the next process gas.
Film deposition apparatus. delete A batch type film forming apparatus for alternately switching and supplying a first process gas and a second process gas to form a predetermined film on a plurality of substrates to be processed,
A plurality of processing chambers for receiving the substrates to be processed one by one,
A gas supply unit for alternately supplying the first process gas and the second process gas to the plurality of process chambers,
An exhaust unit for exhausting the plurality of processing chambers,
And a control unit for controlling supply and exhaust of process gas to and from the plurality of process chambers,
Wherein the exhaust unit has two exhaust paths corresponding to the first process gas and the second process gas and an exhaust path switching section for switching the two exhaust paths,
The control unit controls the gas supply unit so that the first process gas and the second process gas are supplied from the gas supply unit to the process chamber one by one with a time difference to each process chamber And controls the exhaust path switching unit to be exhausted through an exhaust path corresponding to the process gas supplied to each process chamber at the time of exhausting by the exhaust unit,
The gas supply unit is configured to purge the inside of the processing chamber at least after supplying the first processing gas, before supplying the second processing gas, and after supplying the second processing gas and before supplying the first processing gas, A purge gas for supplying the purge gas is supplied,
Wherein the control unit controls the exhaust path switching unit to switch the exhaust path while supplying the purge gas,
Wherein the control unit is configured to exhaust the exhaust gas from only the exhaust path corresponding to the first process gas when switching the exhaust path and then to exhaust the exhaust gas corresponding to the first process gas and the exhaust path corresponding to the second process gas The control unit controls the exhaust path switching unit to exhaust only the exhaust gas corresponding to the second process gas after exhausting the exhaust gas through the exhaust path of the second process gas
Film deposition apparatus. delete The method of claim 3,
Wherein the gas supply unit includes a first process gas supply pipe for supplying the first process gas to the plurality of process chambers, a second process gas supply pipe for supplying the second process gas to the plurality of process chambers, A first supply valve provided in the first process gas supply pipe and a second supply valve provided in the second process gas supply pipe,
Wherein the control unit controls the switching of the exhaust path by the exhaust path switching unit in conjunction with opening and closing operations of the first supply valve and the second supply valve
Film deposition apparatus. The method of claim 3,
Characterized in that the exhaust path switching portion has an exhaust control valve which is provided in each of the two exhaust paths and which can be opened and closed
Film deposition apparatus. The method of claim 3,
Characterized in that the exhaust path switching portion has a switching valve provided at a branching portion of the two exhaust paths
Film deposition apparatus. The method according to any one of claims 1, 3, and 5 to 7,
Wherein each of the processing chambers is formed in a region surrounded by a mounting table for mounting a substrate to be processed and a cover for covering a substrate to be processed on the mounting table, the plurality of processing chambers being arranged in a vertical direction in the processing chamber To
Film deposition apparatus. In a batch type film forming apparatus having a plurality of process chambers for receiving the substrates to be processed one by one, a gas supply unit for sequentially supplying a plurality of process gases to the plurality of process chambers, and an exhaust unit for exhausting the plurality of process chambers, A film forming method for forming a predetermined film on a substrate to be processed,
Wherein the exhaust unit has a plurality of exhaust paths corresponding to each of the plurality of process gases,
Wherein when the process gas is supplied from the gas supply unit to the process chamber, one process gas is sequentially supplied to the process chambers at different time intervals,
And the exhaust path is switched so as to be exhausted through the exhaust path corresponding to the process gas supplied to each process chamber at the time of exhausting by the exhaust unit,
A purge gas for purifying the inside of these processing chambers is supplied from the gas supply unit to the processing chambers after supplying at least one processing gas and before supplying the next processing gas, The exhaust path is switched,
The control unit is configured to exhaust the exhaust gas from only the exhaust path corresponding to the one process gas when switching the exhaust path and then exhaust the exhaust gas corresponding to the one process gas and the exhaust path corresponding to the next process gas Wherein the control unit controls the exhaust path switching unit to exhaust only the exhaust gas corresponding to the next process gas after exhausting the exhaust gas through the exhaust path
How to deposit. delete A gas supply unit for alternately supplying the first process gas and the second process gas to the plurality of process chambers, and a gas supply unit for supplying a gas to the plurality of process chambers, In the film forming apparatus of the above-described type, a predetermined film is formed on a substrate to be processed,
Wherein the exhaust unit has two exhaust paths corresponding to each of the first process gas and the second process gas,
Wherein the first processing gas and the second processing gas are supplied from the gas supply unit to the processing chamber in such a manner that one processing gas is sequentially supplied to the processing chambers at different time intervals,
And the exhaust path is switched so as to be exhausted through the exhaust path corresponding to the process gas supplied to each process chamber at the time of exhausting by the exhaust unit,
A purge gas for purifying the inside of the process chamber is supplied at least before supplying the first process gas, before supplying the second process gas, and after supplying the second process gas and before supplying the first process gas The exhaust path is switched while the purge gas is being supplied,
The control unit is configured to exhaust the exhaust gas from only the exhaust path corresponding to the first process gas when switching the exhaust path and then exhaust the exhaust gas corresponding to the exhaust gas path corresponding to the first process gas and the exhaust path corresponding to the second process gas Wherein the control unit controls the exhaust path switching unit to exhaust only the exhaust gas corresponding to the second process gas after exhausting the exhaust gas through the exhaust path
How to deposit.
delete
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