KR20200027430A - Substrate processing apparatus, and method of manufacturing semiconductor device - Google Patents

Abstract

In regard to first and second processing modules, provided is technology capable of making equal the qualities of generated films between the first and second processing modules when the same film is generated. The present invention includes: a first processing module having a first processing chamber for processing a plurality of substrates placed in a vertical direction; a second processing module placed adjacently to the first processing chamber, and having a second processing chamber for processing a plurality of substrates placed in a vertical direction; a first exhaust box storing a first exhaust system exhausting the inside of the first processing chamber; a second exhaust box storing a second exhaust system exhausting the inside of the second processing chamber; a common supply box controlling at least one between a flowrate and a flow path for a plurality of processing gases supplied into the first and second processing chambers; a first valve group connecting a gas pipe from the common supply box to the first processing chamber in a manner that enables the control of a connection state; and a second valve group connecting a gas pipe from the common supply box to the second processing chamber in a manner that enables the control of a connection state. In regard to the first and second processing modules, to generate the same film, processing, in which the same supply sequence is repeated practically, is performed parallelly with times crossing with each other, and the times crossing with each other are determined by a method of delaying a gas supply sequence of one side of the first and second processing modules starting the processing later to prevent a timing for supplying a specific one of the processing gases from overlapping a gas supply sequence of the other side of the first and second processing modules starting the processing earlier.

Description

Substrate processing device and manufacturing method of semiconductor device {SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE}

The present disclosure relates to a substrate processing apparatus and a method for manufacturing a semiconductor device.

The substrate processing apparatus includes a processing module having a processing path for processing a plurality of substrates arranged in the vertical direction. In this type of substrate processing apparatus, a substrate processing apparatus having a plurality of processing modules has been proposed (Japanese Patent Laid-Open No. 2016-9724, US Patent No. 6902624).

Japanese Patent Publication No. 2016-9724 US Patent No. 6902624

In the substrate processing apparatus including the first processing module and the second processing module, when the same film is formed on the substrate by each processing module, there is a case where the quality of the film produced between the plurality of processing modules is different.

An object of the present disclosure is to provide a technique capable of equalizing the quality of the produced film between the first and second processing modules when the same film is produced in the first and second processing modules.

Other problems and novel features will become apparent from the description of the present specification and the accompanying drawings.

Brief description of the representative ones of the present disclosure is as follows.

According to one aspect, a first processing module having a first processing chamber for processing a plurality of substrates arranged in a vertical direction,

A second processing module disposed adjacent to the first processing chamber and having a second processing chamber for processing a plurality of substrates arranged in a vertical direction;

A first exhaust box containing a first exhaust system for exhausting the inside of the first processing chamber;

A second exhaust box containing a second exhaust system for exhausting the inside of the second processing chamber;

A common supply box for controlling at least one of a flow path or a flow rate of a plurality of process gases supplied to the first and second processing chambers;

A first valve group that connects a gas pipe from the common supply box to the first processing chamber so that a communication state can be controlled;

And a second valve group connecting the gas pipe from the common supply box to the second processing chamber so that the communication state can be controlled.

In the first and second processing modules, in order to produce the same film, a process of repeating a substantially same gas supply sequence is performed in parallel with shifting time,

The shift time is such that the first and later processing starts so that the supply timing of a specific gas among the plurality of processing gases does not overlap with one gas supply sequence of the first and second processing modules that have started processing first. A technique provided by a method of slowing down the gas supply sequence on the other side of the second processing module is provided.

According to the present disclosure, the quality of the produced film can be made equal between the first and second processing modules.

1 is a top view schematically showing an example of a substrate processing apparatus suitably used in the embodiment.
2 is a longitudinal sectional view schematically showing an example of a substrate processing apparatus suitably used in the embodiment.
3 is a longitudinal sectional view schematically showing an example of a substrate processing apparatus suitably used in the embodiment.
4 is a longitudinal sectional view schematically showing an example of a processing furnace suitably used in the embodiment.
5 is a cross-sectional view schematically showing an example of a processing module suitably used in the embodiment.
It is a figure explaining the control example of a recipe by a controller.
It is a figure explaining the control example of a recipe by a controller.
It is a figure explaining the control example of a recipe by a controller.
It is a figure explaining another control example of a recipe by a controller.
8 is a view showing a processing flow for determining the amount of misalignment.
9 is a top view schematically showing an example of the substrate processing apparatus according to Modification Example 1. FIG.
10 is a top view schematically showing an example of a substrate processing apparatus according to Modification Example 2;
11 is a view showing a gas supply system according to Modification Example 3.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of non-limiting example of this invention is described, referring drawings. In the whole drawings, the same or corresponding reference numerals are given to the same or corresponding structures, and overlapping descriptions are omitted. In addition, the storage room 9 side mentioned later is called the front side (front side), and the conveyance room 6A, 6B side mentioned later is called the back side (rear side). In addition, the side facing the boundary line (adjacent surface) of the processing modules 3A and 3B to be described later is called inside, and the side spaced from the boundary line is called outside.

In the present embodiment, the substrate processing apparatus 2 is a vertical substrate processing apparatus (hereinafter referred to as a processing apparatus) that performs a substrate processing process such as heat treatment as one step of a manufacturing process in a method for manufacturing a semiconductor device (device). ) (2).

1 and 2, the processing device 2 includes two adjacent processing modules 3A and 3B. The processing module 3A is composed of a processing furnace 4A and a transfer chamber 6A. The processing module 3B is constituted by a processing furnace 4B and a transfer chamber 6B. Below the processing furnaces 4A and 4B, transport chambers 6A and 6B are arranged, respectively. Adjacent to the front side of the transfer chambers 6A and 6B, a movement mounting chamber 8 including a movement mounter 7 for moving and mounting the wafer W is arranged. The storage chamber 9 which accommodates the pod (hoop) 5 which accommodates a plurality of wafers W is connected to the front side of the moving mounting chamber 8. I / O ports 22 are provided on the entire surface of the storage room 9, and pods 5 are carried in and out of the processing device 2 through the I / O ports 22.

Gate valves 90A and 90B are provided on the boundary walls (adjacent surfaces) of the transfer chambers 6A and 6B and the mobile mounting chamber 8, respectively. Pressure detectors are provided in the movable mounting chamber 8 and in the transport chambers 6A and 6B, respectively, and the pressure in the movable mounting chamber 8 is set to be lower than the pressure in the transport chambers 6A and 6B. . In addition, oxygen concentration detectors are provided in the mobile mounting chamber 8 and in the transfer chambers 6A and 6B, respectively, and the oxygen concentrations in the mobile mounting chamber 8A and in the transfer chambers 6A and 6B are in the air. It is kept lower than the oxygen concentration of. As shown in Fig. 3, a clean unit 62C for supplying clean air into the moving mounting chamber 8 is provided on the ceiling portion of the moving mounting chamber 8, and as clean air in the moving mounting chamber 8 , For example, is configured to circulate an inert gas. By circulating and purging the inside of the moving mounting chamber 8 with an inert gas, it is possible to make the inside of the moving mounting chamber 8 clean. With such a configuration, it is possible to suppress mixing of particles and the like in the transfer chambers 6A and 6B in the transfer chamber 8, and wafers in the transfer chamber 8 and transfer chambers 6A and 6B. Formation of a natural oxide film on W can be suppressed.

Since the processing module 3A and the processing module 3B include the same configuration, hereinafter, only the processing module 3A is representatively described.

As shown in Fig. 4, the processing furnace 4A includes a cylindrical reaction tube 10A and a heater 12A as a heating means (heating mechanism) provided on the outer periphery of the reaction tube 10A. The reaction tube is formed of, for example, quartz or SiC. Inside the reaction tube 10A, a processing chamber 14A for processing the wafer W as a substrate is formed. The reaction tube 10A is provided with a temperature detector 16A as a temperature detector. The temperature detection unit 16A is erected and installed along the inner wall of the reaction tube 10A.

The gas used for the substrate processing is supplied into the processing chamber 14A by the gas supply mechanism 34 as a gas supply system. The gas supplied by the gas supply mechanism 34 can be changed according to the type of film to be formed. Here, the gas supply mechanism 34 includes a source gas supply unit, a reaction gas supply unit, and an inert gas supply unit. The gas supply mechanism 34 is housed in a supply box 72 to be described later. In addition, since the supply box 72 is provided in common for the processing modules 3A and 3B, it is regarded as a common supply box.

The raw material gas supply unit, which is the first gas supply unit, includes a gas supply pipe 36a, and the gas supply pipe 36a, in order from the upstream direction, is a mass flow controller (MFC) 38a, which is a flow rate controller (flow control unit), and a diamond Valves 41a and 40a which are opening and closing valves such as a prem valve are provided. The gas supply pipe 36a is connected to a nozzle 44a penetrating the side wall of the manifold 18. The nozzle 44a is installed vertically along the vertical direction in the reaction tube 10A, and a plurality of supply holes are formed opening toward the wafer W held by the boat 26. Raw material gas is supplied to the wafer W through the supply hole of the nozzle 44a.

Hereinafter, with the same configuration, the reaction gas is a wafer from the reaction gas supply portion, which is the second gas supply portion, through the supply pipe 36b, the MFC 38b, the valve 41b, the valve 40b, and the nozzle 44b. Supplied for W. From the inert gas supply, inert gas is supplied to the wafer W through the supply pipes 36c, 36d, MFCs 38c, 38d, valves 41c, 41d, valves 40c, 40d, and nozzles 44a, 44b. Is supplied. The nozzle 44b is installed vertically along the vertical direction in the reaction tube 10A, and a plurality of supply holes are formed opening toward the wafer W held by the boat 26. Raw material gas is supplied to the wafer W through the supply hole of the nozzle 44b.

In addition, the gas supply mechanism 34 is also provided with a third gas supply unit in order to supply the inert gas or the cleaning gas that does not directly contribute to the reaction gas, raw material gas, or substrate processing to the wafer W. From the third gas supply part, the reaction gas is supplied to the wafer W through the supply pipe 36e, the MFC 38e, the valve 41e, the valve 40e, and the nozzle 44c. From the inert gas supply unit, an inert gas or cleaning gas is supplied to the wafer W through the supply pipe 36f, MFC 38f, valve 41f, valve 40f, and nozzle 44c. The nozzle 44c is installed up and down in the reaction tube 10A along the up-down direction, and a plurality of supply holes opening toward the wafer W held by the boat 26 are formed. Raw material gas is supplied to the wafer W through the supply hole of the nozzle 44c.

In the reaction tube 10A, three nozzles 44a, 44b, and 44c are provided, and it is possible to supply three types of raw material gases in the reaction tube 10A in a predetermined order or at a predetermined cycle. It is done. The valves 40a, 40b, 40c, 40d, 40e, 40f connected to the nozzles 44a, 44b, 44c in the reaction tube 10A are final valves, and are provided in the final valve installation section 75A, which will be described later. . Similarly, three nozzles 44a, 44b, 44c are provided in the reaction tube 10B, and it is possible to supply three kinds of raw material gases in the reaction tube 10B in a predetermined order or at a predetermined cycle. It is structured. The valves 40a, 40b, 40c, 40d, 40e, 40f connected to the nozzles 44a, 44b, 44c in the reaction tube 10B are final valves, and are provided in the final valve installation section 75B, which will be described later.

The plurality of gas pipes 35 on the output side of the valves 41a to 41f are between the valves 41a to 41f and the valves 40a to 40f, and the valves 40a, 40b, 40c, 40d, 40e of the reaction tube 10A, 40f) to a plurality of gas distribution pipes 35A connected to each and a plurality of gas distribution pipes 35B connected to each of the valves 40a, 40b, 40c, 40d, 40e, 40f of the reaction pipe 10B Branch. The plurality of gas pipes 35 can be regarded as a common gas pipe for the reaction pipes 10A and 10B.

The exhaust pipe 46A is attached to the manifold 18A. The exhaust pipe 46A is evacuated through a pressure sensor 48A as a pressure detector (pressure detector) for detecting pressure in the processing chamber 14A, and an APC (Auto Pressure Controller) valve 50A as a pressure regulator (pressure regulator). The vacuum pump 52A as a device is connected. With this configuration, the pressure in the processing chamber 14A can be set as the processing pressure according to the processing. The exhaust system A is mainly composed of the exhaust pipe 46A, the APC valve 50A, and the pressure sensor 48A. The exhaust system A is housed in an exhaust box 74A, which will be described later. One vacuum pump 52A may be provided in common to the processing modules 3A and 3B.

The processing chamber 14A accommodates a boat 26A serving as a substrate holding tool for vertically shelving multiple wafers, for example, 25 to 150 wafers W therein. The boat 26A is supported above the heat insulating portion 24A by the rotating shaft 28A passing through the cover portion 22A and the heat insulating portion 24A. The rotating shaft 28A is connected to the rotating mechanism 30A provided below the cover portion 22A, and the rotating shaft 28A is configured to be rotatable in a state where the inside of the reaction tube 10A is hermetically sealed. The cover portion 22A is driven in the vertical direction by the boat elevator 32A as a lifting mechanism. Thereby, the boat 26A and the cover part 22A are raised and lowered integrally, and the boat 26A is carried in and out of the reaction tube 10A.

The wafer W is moved and mounted on the boat 26A in the transfer chamber 6A. As shown in Fig. 1, a clean unit 60A is provided on one side (the outer side of the transfer chamber 6A, the side opposite to the side facing the transfer chamber 6B) in the transfer chamber 6A. It is configured to circulate clean air (eg, an inert gas) in the transfer chamber 6A. The inert gas supplied into the conveyance chamber 6A is conveyed by an exhaust portion 62A provided on the side (side facing the conveyance chamber 6B) facing the clean unit 60A with the boat 26A interposed therebetween. It is exhausted from inside the seal 6A, and re-supplied from the clean unit 60A into the conveyance chamber 6A (circulating purge). The pressure in the transfer chamber 6A is set to be lower than the pressure in the mobile mounting chamber 8. In addition, the oxygen concentration in the transfer chamber 6A is set to be lower than the oxygen concentration in the atmosphere. With such a structure, it is possible to suppress the formation of a natural oxide film on the wafer W during the wafer W transfer operation.

The controllers 100 for controlling the rotary mechanisms 30A, the boat elevator 32A, the MFCs 38a to 38f of the gas supply mechanism 34A, the valves 41a to 41f, 40a to 40f, and the APC valve 50A ) Is connected. The controller 100 includes, for example, a microprocessor (computer) including a CPU, and is configured to control the operation of the processing device 2. The controller 100 is connected to an input / output device 102 configured as a touch panel or the like. The controller 100 may be installed one by one in each of the processing module 3A and the processing module 3B, or may be installed in common.

The storage unit 104 may be a storage device (hard disk or flash memory) built in the controller 100, and a portable external recording device (magnetic tape such as magnetic tape, flexible disk or hard disk, optical light such as CD or DVD) Disks, magneto-optical disks such as MO, semiconductor memories such as a USB memory or a memory card). In addition, the program may be provided to a computer using communication means such as the Internet or a dedicated line. The program is read from the storage unit 104 by instructions or the like from the input / output device 102, if necessary, and the controller 100 executes the processing according to the read recipe, so that the processing device 2 is the controller 100 ), The desired processing is executed. The controller 100 is accommodated in the controller boxes 76 (76A, 76B). When the controller 100 is installed in each of the processing module 3A and the processing module 3B, a controller 100 (A) for controlling the processing module 3A is installed in the controller box 76A, and the controller In the box 76B, a controller 100 (B) for controlling the processing module 3B is provided.

Next, a process for forming a film on the substrate (film forming process) using the above-described processing device 2 will be described. Here, for the wafer W, hexachlorodisilane (Si ₂ Cl ₆ , abbreviation: HCDS) gas as the first processing gas (raw material gas) as the raw material gas, and ammonia as the second processing gas (reactive gas) as the reaction gas An example of forming a silicon nitride (SiN) film on the wafer W by supplying the (NH ₃ ) gas will be described. In addition, in the following description, the operation | movement of each part which comprises the processing apparatus 2 is controlled by the controller 100.

In the film forming process in this embodiment, the process of supplying HCDS gas to the wafer W in the processing chamber 14A, the process of removing the HCDS gas (residual gas) in the processing chamber 14A, and the wafer in the processing chamber 14A The process of supplying NH ₃ gas to W and the process of removing NH ₃ gas (residual gas) in the processing chamber 14A are repeated a predetermined number of times (one or more times) to form a SiN film on the wafer W. In this specification, this film forming sequence is described as follows for convenience.

_{(HCDS → NH 3) × n} ⇒ SiN

(Wafer charge and boat load)

The gate valve 90A is opened, and the wafer W is conveyed to the boat 26A. When a plurality of wafers W are loaded (wafer charge) on the boat 26A, the gate valve 90A is closed. The boat 26A is brought into the processing chamber 14 by the boat elevator 32A (boat rod), so that the lower opening of the reaction tube 10A is hermetically closed (sealed) by the cover portion 22A. .

(Pressure adjustment and temperature adjustment)

Vacuum evacuation (decompression exhaust) is performed by the vacuum pump 52A so that the inside of the processing chamber 14A becomes a predetermined pressure (vacuum degree). The pressure in the processing chamber 14A is measured by the pressure sensor 48A, and the APC valve 50A is feedback-controlled based on the measured pressure information. Further, the wafer W in the processing chamber 14A is heated by the heater 12A so as to have a predetermined temperature. At this time, the energization state of the heater 12A is feedback-controlled based on the temperature information detected by the temperature detector 16A so that the processing chamber 14A has a predetermined temperature distribution. In addition, rotation of the boat 26A and the wafer W by the rotating mechanism 30A is started.

(Film forming process)

[Raw gas supply process]

When the temperature in the processing chamber 14A stabilizes at a preset processing temperature, HCDS gas is supplied to the wafer W in the processing chamber 14A. The HCDS gas is controlled to be a desired flow rate in the MFC 38a, and is supplied into the processing chamber 14A through the gas supply pipe 36a, the valves 41a, 40a, and the nozzle 44a. The valve 40a is opened when the valve 41a of the processing modules 3A and / or 3B is opened. The valve 40a operates on an interlock basis, and also the valve 40a can operate for a longer life time, slower than the valve 41a. This is accomplished by limiting the airflow of the air driven valve or limiting the applied voltage to the solenoid driven valve. For example, the transition time from the closing of the valve 41a to the opening can be set to 5ms, while the case of the valve 40a is 3ms. The same applies to other valves 41b and 41f.

[Raw gas exhaust process]

Next, the supply of HCDS gas gas is stopped, and the inside of the processing chamber 14A is evacuated by a vacuum pump 52A. At this time, N ₂ gas may be supplied into the processing chamber 14A as an inert gas from the inert gas supply unit (inert gas purge).

[Reaction gas supply process]

Next, NH ₃ gas is supplied to the wafer W in the processing chamber 14A. The NH ₃ gas is controlled to be a desired flow rate in the MFC 38b, and is supplied into the processing chamber 14A through the gas supply pipe 36b, the valves 41b, 40b, and the nozzle 44b.

[Reaction gas exhaust process]

Next, supply of NH ₃ gas is stopped, and the inside of the processing chamber 14A is evacuated by a vacuum pump 52A. At this time, N ₂ gas may be supplied into the processing chamber 14A from an inert gas supply unit (inert gas purge). By performing a cycle for performing the above four steps a predetermined number of times (one or more times), a SiN film of a predetermined composition and a predetermined film thickness can be formed on the wafer W.

(Boat unload and wafer discharge)

After forming a film having a predetermined film thickness, N ₂ gas is supplied from the inert gas supply unit, the inside of the processing chamber 14A is replaced with N ₂ gas, and the pressure in the processing chamber 14A is returned to normal pressure. Thereafter, the cover portion 22A is lowered by the boat elevator 32A, and the boat 26A is taken out from the reaction tube 10A (boat unloading). Thereafter, the processed wafer W is taken out from the boat 26A (wafer discharge).

Thereafter, the wafer W may be accommodated in the pod 5 and taken out of the processing apparatus 2, or may be conveyed to the processing furnace 4B, for example, substrate processing such as annealing may be continuously performed. When the wafer W is processed in the processing furnace 4B continuously after the processing of the wafer W in the processing furnace 4A, the gate valves 90A and 90B are opened, and the boat 26A to the boat 26B is opened. Wafer W is transferred directly. Subsequent carrying-in of the wafer W into the processing furnace 4B is performed in the same procedure as the substrate processing by the above-described processing furnace 4A. Note that the substrate processing in the processing furnace 4B is performed in the same procedure as the substrate processing by the above-described processing furnace 4A, for example.

The following is exemplified as the processing conditions for forming the SiN film on the wafer W, for example.

Treatment temperature (wafer temperature): 100 ° C to 800 ° C,

Treatment pressure (pressure in the treatment chamber) 5 Pa to 4000 Pa,

HCDS gas supply flow rate: 1 sccm to 2000 sccm,

NH ₃ gas supply flow rate: 100 sccm to 30000 sccm,

N ₂ gas supply flow rate: 1 sccm to 50000 sccm,

By setting each processing condition to a value within each range, it becomes possible to appropriately advance the film forming process.

Next, the back configuration of the processing apparatus 2 will be described.

For example, when the boat 26 is damaged, the boat 26 needs to be replaced. In addition, when the reaction tube 10 is damaged or when cleaning of the reaction tube 10 is necessary, it is necessary to separate the reaction tube 10. In this way, when performing maintenance in the transfer chamber 6 or the processing furnace 4, maintenance is performed from the maintenance areas A and B on the back side of the processing apparatus 2.

As shown in Fig. 1, maintenance ports 78A and 78B are formed on the back side of the transfer chambers 6A and 6B, respectively. The maintenance port 78A is formed on the transport chamber 6B side of the transport chamber 6A, and the maintenance port 78B is formed on the transport chamber 6A side of the transport chamber 6B. The maintenance openings 78A and 78B are opened and closed by the maintenance doors 80A and 80B. The maintenance doors 80A, 80B are configured to be rotatable with the hinges 82A, 82B as the primary axis. The hinge 82A is provided on the conveyance chamber 6B side of the conveyance chamber 6A, and the hinge 82B is provided on the conveyance chamber 6A side of the conveyance chamber 6B. That is, the hinges 82A and 82B are provided so as to be adjacent to each other near the inner corner portions located on the adjacent side of the back side of the transfer chambers 6A and 6B. The maintenance area is formed on the processing module 3B side on the back of the processing module 3A and on the processing module 3A side on the back of the processing module 3B.

As indicated by the imaginary line, the maintenance doors 80A, 80B are rotated horizontally to the rear side of the transfer chambers 6A, 6B around the hinges 82A, 82B, so that the rear maintenance ports 78A, 78B Is open. The maintenance door 80A is configured such that it can be opened up to 180 ° by extending to the left toward the transfer room 6A. The maintenance door 80B is configured to be opened to the right toward the conveyance chamber 6B and open up to 180 °. That is, toward the conveyance chamber 6A, the maintenance door 80A rotates clockwise, and the maintenance door 80B rotates counterclockwise. In other words, the maintenance doors 80A and 80B are rotated in opposite directions. The maintenance doors 80A and 80B are configured to be detachable, and maintenance may be performed separately.

A utility system 70 is provided in the vicinity of the rear surface of the transfer chambers 6A and 6B. The utility system 70 is disposed between the maintenance areas A and B. When performing the maintenance of the utility system 70, it is performed from the maintenance areas A and B.

The utility system 70 includes final valve installation portions 75A, 75B, exhaust boxes 74A, 74B, supply boxes 72, and controller boxes 76A, 76B.

The utility system 70 is composed of exhaust boxes 74A, 74B, supply boxes 72, and controller boxes 76A, 76B in order from the housing side (transport chambers 6A, 6B). The final valve installation portions 75A, 75B are provided above the exhaust boxes 74A, 74B. The maintenance spheres of each box of the utility system 70 are formed on the maintenance areas A and B, respectively. The supply box 72 is disposed on the side opposite to the side adjacent to the conveyance chamber 6A of the exhaust box 74A, and the supply box 72B is disposed adjacent to the side adjacent to the conveyance chamber 6B of the exhaust box 74B. do.

As shown in FIG. 3, in the processing module 3A, the final valve installation part (in which the final valves (valve 40a, 40b, 40c located at the bottom of the gas supply system) of the gas supply mechanism 34 are installed is installed ( 75A) is arranged above the exhaust box 74A. Preferably, it is arranged exactly above (just above) the exhaust box 74A. With this configuration, the supply box 72 is placed on the housing side. Even if installed at a spaced apart from, the pipe length from the final valve to the processing chamber can be shortened, thereby improving the quality of film formation. Although not shown in Fig. 3, in addition to the valves 40a, 40b, 40c, the valve ( 40d, 40e, and 40f) are also disposed in the final valve installation portion 75A.

Further, although not shown, in the processing module 3B, the final valve installation portion 75B in which the final valve (the valves 40a, 40b, 40c located at the bottom of the gas supply system) of the gas supply mechanism 34 is installed is installed. Is arranged above the exhaust box 74B. Preferably, it is arranged exactly above (just above) the exhaust box 74B. With this configuration, the supply box 72 is spaced apart from the housing side. Even if it is installed in a place where the piping length from the final valve to the processing chamber can be shortened, the quality of film formation can be improved.In addition to the valves 40a, 40b, 40c, the valves 40d, 40e, 40f are also final. It is arranged in the valve installation portion 75B.

As shown in Fig. 5, each configuration of the processing modules 3A, 3B and the utility system 70 is arranged symmetrically with respect to the adjacent surface S ₁ of the processing modules 3A, 3B. In addition, the reaction tubes 10A and 10B are also arranged symmetrically with respect to the adjacent surface S ₁ of the processing modules 3A and 3B. Thereby, piping is arrange | positioned so that the piping length of the exhaust pipes 46A, 46B from the processing modules 3A, 3B to the exhaust boxes 74A, 74B becomes substantially the same length in the processing modules 3A, 3B. In addition, piping (gas pipe) is such that the piping lengths from the final valves 40A, 40B installed in the final valve installation portions 75A, 75B to the nozzles 44A, 44B are approximately the same length in the processing modules 3A, 3B. ).

In Fig. 5, the final valve 40A represents the valves 40a to 40f of the processing module 3A, and the final valve 40B represents the valves 40a to 40f of the processing module 3B. Further, the nozzle 44A represents the nozzles 44a to 44c of the processing module 3A, and the nozzle 44B represents the nozzles 44a to 44c of the processing module 3B. For example, piping 10Aa corresponds to piping between the valve 40a of the processing module 3A and the nozzle 44a of the processing module 3A, so that the piping 10Ba is the valve of the processing module 3B ( 40a) and the pipes between the nozzles 44a of the processing module 3B, the pipes 10Aa and 10Ba have substantially the same pipe length. In addition, the piping 10Ab corresponds to the piping between the valve 40b of the processing module 3A and the nozzle 44b of the processing module 3A, so that the piping 10Bb is the valve 40b of the processing module 3B When the pipes correspond to the pipes between the nozzles 44b of the processing module 3B, the pipes 10Ab and 10Bb have substantially the same pipe length. Thereby, when the same gas is supplied from the supply box 72 to the nozzle 44a of the processing module 3A through the valve 40a of the processing module 3A and the piping 10Aa, and the processing module 3B When supplying to the nozzle 44a of the processing module 3B through the valve 40a and piping 10Ba of), it can be set to the same arrival time. Therefore, the recipe management of the processing modules 3A and 3B by the controller 100 can be facilitated. Moreover, as shown by the arrow in FIG. 5, the rotation direction of the wafer W is also configured to be in opposite directions in the processing furnaces 4A and 4B.

In addition, the arrangement form of the reaction tubes 10A and 10B is not limited to FIG. 5. Each of the nozzles 44A, 44B may be provided so as to correspond to the final valve installation portions 75A, 75B. Further, the reaction tubes 10A, 10B may be arranged so that the exhaust pipes 46A, 46B to the exhaust boxes 74A, 74B have the shortest length. However, it is preferable that the reaction tubes 10A and 10B are arranged symmetrically with respect to the adjacent surface S ₁ of the processing modules 3A and 3B.

For the processing modules 3A and 3B, a common supply box 72 is provided, and gas pipes from the supply box 72 to the final valves 40A and 40B are shared, so that space saving of the substrate processing apparatus is possible.

In addition, the footprint required by the substrate processing apparatus 2 is reduced, and it is possible to suppress the use area of the clean room compared to the required production amount, which is very economical.

6A, 6B, and 6C are views for explaining an example of control of a recipe by a controller. The recipe describes the supply amount of each process gas such as reaction gas or raw material gas, the target vacuum degree (or exhaust rate), the processing chamber temperature, and the like in time series, and may include a pattern repeated at regular cycles. The term recipe may sometimes refer to one cycle of this repeating pattern, in consultation. In the produced recipe, the controller 100 is executed, so that the processing device 2 performs desired processing under the control of the controller 100. When the processing apparatus 2 includes the processing modules 3A and 3B, it is possible that the same gas is used between the processing modules 3A and 3B depending on the timing of starting the recipe.

In the present embodiment, the controller 100 for managing the recipe has a function of mutual monitoring so that the same process gas cannot be simultaneously flowed to the reaction tubes 10A and 10B of the processing modules 3A and 3B. By registering the gas and valve to be monitored to parameters or recipes in the controller, the controller 100 performs mutual monitoring of recipes for the processing modules 3A and 3B based on the registered gas and valve, and the same process Control is performed to optimize the start time of the recipe and the like so that gas does not flow to the processing modules 3A and 3B at the same time. Optimization of the start time of the recipe, etc., vacuuming time of the vacuum pump 52A for evacuating the inside of the reaction tubes 10A, 10B or purge time for purging the inside of the reaction tubes 10A, 10B with N ₂ gas, etc. Can be adjusted. Mutual monitoring and control include a valve level and a recipe level.

6A shows an example of recipes RC1 and RC2 executed in each of the processing modules 3A and 3B. Recipes RC1 and RC2 are the same recipe, and three processing gases A, B, and C are used. In order to produce the same film on each substrate in the reaction tubes 10A and 10B, recipes RC1 and RC2 of substantially the same gas supply sequence are repeatedly executed in multiple cycles. Each of the recipes RC1 and RC2 includes process steps PS1 to PS9, which are substantially the same gas supply sequence. The process step PS1 is processing (A) for supplying the processing gas A into the reaction tube 10A or 10B. Process step PS4 is processing (B) for supplying the processing gas B into the reaction tube 10A or 10B. The process step PS7 is a process (C) for supplying the process gas C into the reaction tube 10A or 10B. After each of the process steps PS1, PS4, and PS7, process steps PS2, PS5, and PS8 are executed. The process steps PS2, PS5, and PS8 are processing (V) for setting the target vacuum level to a relatively low pressure (for example, 10 to 100 Pa) and evacuating the inside of the reaction tube 10A or 10B. After each of the process steps PS2, PS5, and PS8, process steps PS3, PS6, and PS9 are executed. The process steps PS3, PS6, and PS9 are processes (P) for evacuating the inside of the reaction tubes 10A, 10B while flowing purge gas (N ₂ gas) in the reaction tubes 10A, 10B.

As shown in Fig. 6A, in recipes RC1 and RC2, when recipes RC1 and RC2 are started with a short time difference with respect to time T, it is assumed that the same process gases A, B and C are used at the same time. That is, the process steps PS1, PS4, and PS7 of the processing module 3A and the process steps PS1, PS4, and PS7 of the processing module 3B may be executed simultaneously. However, there is only one mass flow controller (MFC) corresponding to the processing gases A, B, C. As shown in Fig. 4, in the gas supply mechanism 34 accommodated in the supply box 72, for example, the mass flow controller for process gas A is one MFC 38a, and the mass for process gas B is The flow controller is one MFC 38b, and the mass flow controller for process gas C is one MFC 38c. For this reason, when the same processing gas (A, B or C) is used in the processing modules 3A and 3B at the same time, the flow rate to each processing module 3A and 3B cannot be controlled with the same precision as in the prior art. The recipes are different between the processing modules 3A and 3B. When the recipes are different between the processing modules 3A and 3B, the quality of the film produced by the processing modules 3A and 3B is affected. For this reason, it is preferable to avoid using the same processing gas (A, B or C) at the same time in the processing modules 3A and 3B.

In the control of the valve level, the controller 100 of the processing modules 3A, 3B opens and closes the valves 40a to 40c of the processing module 3A and the valves 40a to 40c of the processing module 3B. Is monitored between the processing modules 3A and 3B. Control of this valve level is also called interlock.

For example, if the final valve to which the processing module 3B of the other side corresponds (that is, connected to the same distribution piping) of the processing module 3A of the processing module 3A is closed, the processing module 3A of the processing module 3A ) To open the final valve. On the other hand, if the final valve to which the processing module 3B on the other side corresponds (that is, connected to the same distribution piping) is open, the recipe of the processing module 3A of itself is stopped until the final valve is closed. Control. In addition, the controller 100 of the processing module 3B, if the final valve corresponding to the other processing module (3A) (i.e. connected by the same distribution piping) is closed, according to the recipe of the own processing module (3B) Open the final valve. On the other hand, if the corresponding final valve of the processing module 3A on the other side (i.e. connected to the same distribution piping) is open, the recipe of the processing module 3B is stopped until the final valve is closed. Control.

On the other hand, in the control of the process recipe level, the controller 100 monitors the progress of the recipes RC1 and RC2 at each timing, such as before the boat load, when the recipes RC1 and RC2 are started, and the gas A used, Predict the timing of the sequence in which B and C flow. In the processing modules 3A and 3B, when the same processing gas A, B or C does not flow at the same timing, the recipes RC1 and RC2 proceed as they are. On the other hand, in the processing modules 3A and 3B, when it is predicted that the same processing gas A, B or C will flow at the same timing, the controller 100 calculates and uses a sequence in which the same process gas does not flow at the same time. Control is performed to shift the timing of supply of the gas to be shifted in time.

That is, in the processing modules 3A and 3B, in order to produce the same film, the process of repeating the substantially same gas supply sequence is performed in parallel with shifting time. The shift time is started later so that the supply timings of the specific gases among the plurality of process gases A, B, and C do not overlap with one gas supply sequence of the processing modules 3A, 3B that started processing first. It is determined by a method of slowing down the gas supply sequence on the other side of the processing modules 3A and 3B.

For example, as shown in Fig. 6A, it is assumed that the controller 100 predicts the timing of the gas supply sequence through which the process gases A, B, and C to be used flow when the recipes RC1 and RC2 are started. That is, suppose that the same processing gas (A, B or C) flows through the processing modules 3A and 3B at the same timing. In this case, the controller 100 simultaneously calculates a sequence in which the same process gas does not flow, and performs control to shift the timing of supply of the used gas in time. That is, before the recipes RC1 and RC2 are started, the controller 100 has the timing of the gas supply sequence temporally so that the same processing gases A, B, and C do not flow at the same timing in the processing modules 3A and 3B. Create a recipe RC2 that has been misaligned. As shown in Fig. 6B, in the recipe RC2 implemented by the processing module 3B, the process step PSA1 is automatically added by the controller 100 before the process step PS1. The process step PSA1 is a process (P) for evacuating the inside of the reaction tube 10B while flowing a purge gas (N ₂ gas) in the reaction tube 10B, for example. Note that the process step PSA1 is added only before the first process step PS1 of the first cycle when the recipe RC2 (PS1 to PS9) is executed multiple cycles. The process step PSA1 is not added before the process step PS1 in the second and subsequent cycles of the recipe RC2 (PS1 to PS9). That is, after the last process step PS9 of the first cycle of the recipe RC2 (PS1 to PS9) is executed, the first process step PS1 of the second cycle of the recipe RC2 (PS1 to PS9) is performed. Similarly, after the execution of the last process step PS9 of the second cycle of recipe RC2 (PS1 to PS9), the first process step PS1 of the third cycle of recipe RC2 (PS1 to PS9) is performed.

In the example of Fig. 6B, among the processing gases A, B, and C that cannot flow at the same time, the one with the longest supply time (t _max ) in one cycle of the recipes RC1, RC2 is selected (here, PS7), The recipe time difference t _diff between the processing modules 3A and 3B is adjusted by delaying the start time of the process step PS1 of either recipe RC1 or RC2 so as to coincide with t _max + n * t _cycle . In the example of Fig. 6B, the start time of PS1 in recipe RC2 is delayed by the time at which the process step PSA1 is added, compared to the start time of PS1 in recipe RC1. That is, the time difference after adjustment t _diff _ _adj = t _max + n * t _cycle , (where n is an arbitrary integer, t _cycle is the time of one cycle of the recipe: the time from the start time of PS1 to the end time of PS7) . In addition, it is assumed that t _max ≤ t _cycle / 2.

If it is desirable to reduce the delay time, depending on the current time difference (the progress time of the recipe RC2 of the current processing module 3B based on the recipe RC1 of the processing module 3A) t _diff ,

{

if (t _max ≤ (| t _diff |% t _cycle ) <t _max + t _cycle / 2) then decelerate the processing module in progress by | t _diff |% t _cycle ) -t _max (ie t _diff _ _adj = t _diff -((| t _diff |% t _cycle ) -t _max ))

else if ((| t _diff |% t _cycle ) <t _max ) then delay the PM on the late side (| t _diff |% t _cycle ) -t _max

Else delay the processing module on the late side by t _cycle- (| t _diff |% t _cycle ) -t _max

}

Here,% is the operator of the minimum non-negative surplus, and when 0 <(t _diff % t _cycle ) <t _cycle / 2, the processing module 3A is leading, and otherwise, the processing module 3B is leading. .

In addition, the controller 100 also has an adjustment function that makes the heat history of the processing chambers 14A and 14B the same. The determined time can be set, and the time of the waiting side can be automatically adjusted to each other with the purge time setting the history between batches as well as the recipe of simultaneous progress. That is, in the last cycle in which the recipes RC1 and RC2 of the processing modules 3A and 3B shown in FIG. 6B are repeatedly executed multiple cycles, the process step PS9 of the recipe RC1 of the processing module 3A is the recipe of the processing module 3B Compared to the process step PS9 of RC2, it ends in time earlier. Therefore, the heat history of the processing chamber 14A differs from the heat history of the processing chamber 14B.

As shown in Fig. 6C, in the final cycle of the recipe RC1 of the processing module 3A, the process step PSA2 of the same time as PSA1 is automatically added by the controller 100 after the process step PS9. Thereby, the heat history of the processing chamber 14A and the heat history of the processing chamber 14B can be made the same. The process step PSA2 is a process (P) of evacuating the inside of the reaction tube 10A while flowing a purge gas (N ₂ gas) in the reaction tube 10A, for example.

In addition, the processing module 3A and the processing module 3B are basically operated asynchronously, and there is little dependency between the processing module 3A and the processing module 3B. For this reason, even if one of the processing module 3A and the processing module 3B is stopped due to a failure or the like, the processing module 3A and the other of the processing module 3B can continue processing.

It is a figure explaining another control example of a recipe by a controller. 7 shows four examples in which the processing times of the process steps PSA1 to PSA4 added before the process step PS1 in the recipe RC2 performed by the processing module 3B are different.

The recipe RC21 shown in FIG. 7 is the same as the recipe RC2 shown in FIG. 6B and is based on a rule that shifts the progress time of the recipe RC21 by the supply time of the processing gas C having the longest supply time in one cycle. For this reason, in recipe RC21, process step PSA1 is added before process step PS1. Thereby, after completion of the process step PS7 supplied by the gas C to the processing module 3A, the process step PS7 supplied by the gas C to the processing module 3B is subsequently started. Alternatively, it can be said that the recipe RC21 is based on a rule that the exhaust timings of the processing gases A and B and the processing gas C do not overlap. According to this rule, when the process gas C reacts with the process gases A and B in a gas phase, the generation of undesirable solids upstream of the common vacuum pump 52 can be suppressed. Alternatively, it can be said that the recipe RC21 is based on the rule that the end of the purge process of the processing gases A, B and C and the exhaust process of any gas do not overlap. By this rule, it is possible to prevent an increase in the residual gas concentration at the end of purging.

In the recipe RC22 shown in Fig. 7, process step PSA2 is added before process step PS1. Thereby, after using the processing gases A and B in the processing module 3A (after the end of the process step PS4), the process step PS1 using the processing gas A is started in the processing module 3B.

In the recipe RC23 shown in Fig. 7, process step PSA3 is added before process step PS1. Between processing modules 3A and 3B, it is based on a rule that simply reverses the phase of the recipe (that is, sets the time difference to t _diff _ _adj = t _cycle / 2). Even if a buffer tank is provided between the gas supply system 34 and the final valve arrangement parts 75A and B due to the temporal symmetry, the rules are equally applied to the respective processing modules 3A and B. Can supply gas. Alternatively, it can be said that the recipe RC23 is based on a rule that the exhaust timings of the processing gases A, B and C do not overlap with each other. This is suitable when the process total time of continuous supply, exhaust and purge for one gas is t _cycle / 2 or more.

In the recipe RC24 shown in Fig. 7, a process step PSA4 is added before the process step PS1. Thereby, after completion of supply of the processing gas C to the processing module 3B (after the completion of the process step PS7), supply of the processing gas C to the processing module 3A in the second cycle is started (2 cycles). Process step PS7). When the processing modules 3A and 3B are not distinguished (not having a sequential problem), they are equivalent to the recipe RC21 of the processing modules 3B.

As shown in the recipes RC1 to RC4 in Fig. 7, the start timing of the process step PS1 using the processing gas A in the processing module 3B can be optimally controlled by setting parameters and predicted sequences.

However, it can be said that it is not guaranteed that all the recipes RC1, RC21 to RC24 in FIG. 7 do not overlap the gas supply timing for any recipe.

8 is a view showing a processing flow for determining an amount of misalignment in which supply timings do not overlap. The processing flow in FIG. 8 starts from the state where the time difference t _adj between cycles of the recipes of the processing modules 3A and 3B is 0, and calculates the required amount of shift.

Step S1: 0 is substituted into the variable t _adj _ _add indicating the time at which the recipe of the processing module 3B should be delayed more than the current parallax t _adj .

Step S2: The following processing (steps S21 to S23) is performed for each of the processing gases by sequentially selecting one (gas x) from among the processing gases.

Step S21: Of the one cycle in which the recipe in the processing module 3A is specified, the supply section of gas x is sequentially selected from the head, and its start time t _{1xi_start} and its end time t _{1xi_end} are specified. Here, i is an index of n _x number of supply intervals.

Step S22: The gas which is started between the _start time t _1xi _ _start and the end time t _1xi _ _end during the arbitrary one cycle in the recipe in the processing module 3A and the processing module 3B with a time difference of t _adj It is checked whether there is no supply of, and the maximum value of the delay time necessary for resolving the overlap of the supply section is updated. Specifically, t _1xi _ _start _ _{start 2xj} ≤t <t _1xi _ a _ t _{2xj start} satisfying the _end, the supply cycle period j = 1..n _x among all find, _add t _adj _ <_ t _{2xj start} If -t _1xi _ _start , t _2xj _ _start -t _1xi _ _start is substituted for t _adj _ _add .

Step S23: If the index i has not reached n _x , the process returns to step S21. If so, the process proceeds to the next process (step S3).

Step S3: If the held variable t _adj _ _add is 0, the current parallax t _adj is determined (i.e., t _adj is determined as t _diff _ _adj or t _max ) to end the processing.

When it is non-zero in step 3, as step S4, if t _cycle <t _diff _ _adj + t _adj , the processing of the overlapping is impossible, and processing is stopped.

In step S4, if t _cycle <t _diff _ _adj + t _adj is not, as step S5, t _diff _ _adj is substituted for t _diff _ _adj -t _adj , and the process returns to step S1.

The above is summarized as follows.

The substrate processing apparatus 2,

A first processing module 3A having a first processing chamber (reaction tube 10A) for processing a plurality of substrates W arranged in the vertical direction,

A second processing module 3A having a second processing chamber (reaction tube 10B) disposed adjacent to the first processing chamber 10A and processing a plurality of substrates arranged in a vertical direction;

A first exhaust box (74A) in which a first exhaust system for exhausting the inside of the first processing chamber (10A) is housed;

A second exhaust box 74B in which a second exhaust system for exhausting the inside of the second processing chamber 10B is housed,

A common supply box 72 that controls at least one of a flow path or a flow rate of a plurality of process gases (A, B, C) supplied into the first and second process chambers (10A, 10B),

A first valve group (40A, 40a to 40f) for controlably connecting a gas pipe from the common supply box 72 to the first processing chamber 10A,

And a second valve group (40B, 40a to 40f) for controlably connecting the gas pipe from the common supply box to the second processing chamber (10B),

In the first and second processing modules 3A and 3B, in order to produce the same film, a process of repeating substantially the same gas supply sequence (recipe RC1 and RC2) is performed in parallel with shifting time,

The shift time is one of the first and second processing modules 3A and 3B in which the supply timing PS7 of the specific gas C among the plurality of processing gases A, B, and C first started processing. The gas supply sequence (PS7 of recipe RC2) of the other side 3B of the first and second processing modules 3A and 3B which start processing later, so as not to overlap with the gas supply sequence of (3A) (PS7 of recipe RC1) ) By slowing down (insertion of PSA1 into recipe RC2).

In addition, in the substrate processing apparatus 2,

The first and second processing modules 3A and 3B, the first and second exhausts based on the surfaces S ₁ and S ₂ adjacent to the first and second processing modules 3A and 3B Each of the boxes 74A, 74B, and the first and second valve groups 40A, 40B is configured to be symmetrical to each other and is also arranged,

The length of the plurality of gas pipes 10Aa and 10Ab between the first valve group 40A and the first processing module 3A is between the second valve group 40B and the second processing module 3B. It is equivalent to the length of the corresponding gas pipes 10Ba, 10Bb.

In addition, in the substrate processing apparatus 2,

The plurality of process gases includes three types of source gases,

The gas supply sequence (recipe RC1, RC2) is a periodic supply of three kinds of processing gases (A, B, C) at a time interval to one processing chamber, and the first and second processing modules ( 3A, 3B) while performing in parallel, each of the three types of processing gases A, B, and C is not supplied to either of the first and second processing modules 3A, 3B (Fig. 6B) In, there are PS2 of RC1, PSA1 of PS3 and RC2, PS5 of RC1, PS2 and PS3 of PS6 and RC2).

In the substrate processing apparatus (2),

A first process controller (controller 100 (A)) for controlling the first processing module 3A, the first exhaust box 74A, and the first valve group 40A,

And a second process controller (controller 100 (B)) for controlling the second processing module 3B, the second exhaust box 74B and the second valve group 40B,

The first and second process controllers 100 (A) and 100 (B) display information substantially indicating the flow status of the first and second valve groups 40A and 40B, which are respectively controlled by another process. The first and the second and the second valve group (40A, 40B) while simultaneously prohibiting the simultaneous supply of valves of the same gas to the controller (100 (A), 100 (B)) The second processing modules 3A and B are operated asynchronously.

(Modified example)

Hereinafter, several modified examples will be described.

(Modification 1)

9 is a top view schematically showing an example of a substrate processing apparatus according to Modification Example 1. FIG.

As shown in Fig. 9, the utility system 70 is composed of a supply box 72, exhaust boxes 74A, 74B, and controller boxes 76A, 76B. The supply boxes 72, the exhaust boxes 74A, 74B, and the controller boxes 76A, 76B are arranged symmetrically with respect to the adjacent surfaces S ₂ of the transfer chambers 6A, 6B. The exhaust box 74A is disposed at an outer corner portion located on the opposite side to the transfer chamber 6B on the rear surface of the transfer chamber 6A. The exhaust box 74B is disposed at the outer corner portion located on the opposite side to the transfer chamber 6A on the rear surface of the transfer chamber 6B. That is, the exhaust boxes 74A, 74B are provided flat (smoothly) so that the outer side surfaces of the transport chambers 6A, 6B and the outer side surfaces of the exhaust boxes 74A, 74B are connected to a flat surface.

The supply box 72 is disposed between the exhaust boxes 74A, 74B, and spaced apart from the exhaust boxes 74A, 74B. The front surface of the supply box 72 is disposed so as to contact the back surfaces of the transport chambers 6A and 6B. The final valve installation portions 75A, 75B are installed to contact the back surfaces of the processing furnaces 4A, 4B. The part where the side surfaces of the final valve installation parts 75A and 75B are in contact is provided on the upper front side of the supply box 72. In the overlapping part of the final valve installation parts 75A, 75B and the supply box 72, a plurality of pipes are arranged from the supply box 72 to the final valve installation parts 75A, 75B. The controller boxes 76A and 76B are provided in contact with the back surface of the supply box 72.

Also in this configuration, as described in FIG. 5, the same gas from the supply box 72 is supplied through the valve 40a of the processing module 3A and the pipe 10Aa and the nozzle 44a of the processing module 3A. ), And the case of supplying to the nozzle 44a of the processing module 3B through the valve 40a and piping 10Ba of the processing module 3B can be set to the same arrival time.

(Modification 2)

10 is a top view schematically showing an example of a substrate processing apparatus according to Modification Example 2. FIG. 10 differs from FIG. 9 in that the controller boxes 76A and 76B are provided on the rear surface of the exhaust boxes 74A and 74B, and the supply box 72 is provided on the entire floor surface. Other configurations are the same as in FIG. 10. Further, a plurality of pipes from the supply box 72 to the final valve installation portions 75A and 75B can be arranged at a position indicated by a rectangular dotted line BB.

Also in this configuration, as described in FIG. 5, the same gas from the supply box 72 is supplied through the valve 40a of the processing module 3A and the pipe 10Aa and the nozzle 44a of the processing module 3A. ), And the case of supplying to the nozzle 44a of the processing module 3B through the valve 40a and piping 10Ba of the processing module 3B can be set to the same arrival time.

(Modification 3)

11 is a view showing a gas supply system according to Modification Example 3.

In FIG. 11, the gas supply system 34 which supplies nitrogen gas (N ₂ ), ammonia gas (NH ₃ ), HCDS gas, and cleaning gas (GCL) by way of example is demonstrated. Note that the configuration of the final valve installation portion 75A and the configuration of the final valve installation portion 75B are the same, and description of the configuration of the final valve installation portion 75B is omitted.

HCDS gas is supplied to the nozzles 44a of the reaction tubes 10A, 10B through the valves 40a of the valves 42a, MFC 38a, valves 41a, and final valve mounting portions 75A, 75B. It is possible.

Ammonia gas (NH ₃ ) is a nozzle 44b of the reaction tube 10A, 10B through the valve 42b, MFC 38b, valve 41b, and valve 40b of the final valve installation portions 75A, 75B. ). Ammonia gas (NH ₃ ) can also be supplied to the nozzles 44c of the reaction tubes 10A and 10B through the valve 41b2 and the valve 40f of the final valve installation portions 75A and 75B.

Nitrogen gas (N ₂ ) is the nozzle 44a of the reaction tube 10A, 10B through the valve 42d, the MFC 38c, the valve 41c, and the valve 40c of the final valve installation portions 75A, 75B. ). In addition, nitrogen gas (N ₂ ) is the nozzle of the reaction tube 10A, 10B through the valve 42d, the MFC 38d, the valve 41d, and the valve 40d of the final valve installation parts 75A, 75B. It can also be supplied to (44b). In addition, the nitrogen gas (N ₂ ) is a nozzle of the reaction tube 10A, 10B through the valve 42d, the MFC 38f, the valve 41f, and the valve 40f of the final valve installation portions 75A, 75B. It can also be supplied to (44c).

The cleaning gas GCL is the entirety of the reaction tubes 10A, 10B through the valves 42g, MFC 38g, valve 41g, and valves 40g, 40g2, 40g3 of the final valve mounting portions 75A, 75B. It is possible to supply the nozzles 44a, 40b and 40c.

Moreover, the valve 41a2 downstream of the MFC 38c, 41b3 downstream of the MFC 38b, and the valve 41g2 downstream of the MFC 38b are connected to the exhaust system ES.

As shown in FIG. 11, the plurality of gas pipes 35, which are distribution pipes on the downstream side of the gas supply system 34, include a plurality of gas distribution pipes 35A connected to the final valve installation portion 75A, and a final valve Branched to a plurality of gas pipes 35B connected to the installation portion 75B. After branching, the plurality of gas distribution pipes 35A and the plurality of gas pipes 35B have equal lengths to each other. The plurality of gas pipes 35 may be provided with a heater, filter, check valve (check valve), buffer tank, or the like, as appropriate.

The valves 40a to 40d, 40f, 40g, 40g2, and 40g3, which are the final valve groups of the processing module 3A, have three nozzles (also referred to as injectors) of the reaction tube 10A of the processing module 3A (44a, 44b, 44c), it is possible to directly operate the gas supply to the injector by the controller 100. The final valve group of Fig. 11 (valves 40a to 40d, 40f, 40g, 40g2, 40g3) can simultaneously (i.e., mix) a plurality of gases to one injector 44a, 44b, 44c. Further, the cleaning gas GCL from one distribution pipe is configured to be supplied to all injectors 44a, 44b, 44c. The valves 40a to 40d, 40f, 40g, 40g2, and 40g3, which are the final valve groups of the processing module 3B, and the final valve group (valves 40a to 40d, 40f, 40g, 40g2, 40g3) of the processing module 3A, It has the same configuration.

According to this embodiment, one or more effects can be obtained below.

1) Between the plurality of processing modules 3A and 3B, the quality of the produced film can be made equal.

2) Between the plurality of processing modules 3A and 3B, the heat history can be made equal.

3) A common supply box is provided for the plurality of processing modules 3A and 3B, and the gas pipe from the supply box to the final valve is shared, so that space saving of the substrate processing apparatus can be achieved.

4) By 3), the footprint required for the substrate processing apparatus is reduced, and compared to the required production amount, it is possible to suppress the use area of the clean room, which is very economical.

For example, in the above-described embodiment, an example in which HCDS gas is used as a raw material gas has been described, but the present invention is not limited to such an embodiment. For example, as the raw material gas, in addition to HCDS gas, DCS (Si ₂ H ₄ Cl ₆ : dichlorodisilane) gas, MCS (SiH ₃ Cl: monochlorosilane) gas, TCS (SiHCl ₃ : trichlorosilane) gas, etc. Of inorganic halosilane raw material gas, 3DMAS (Si [N (CH ₃ ) ₂ ] ₃ H: trisdimethylaminosilane) gas, BTBAS (SiH ₂ [NH (C ₄ H ₉ )] ₂ : bistert-butylaminosilane ) Non-halogen-containing inorganic silanes such as halogen-free amino or amine-based gas such as gas, MS (SiH ₄ : monosilane) gas, DS (Si ₂ H ₆ : disilane) gas, etc. Raw gas can be used.

For example, in the above-described embodiment, an example of forming a SiN film has been described. However, the present invention is not limited to this aspect. For example, in addition to these, or in addition to these, nitrogen (N) -containing gas such as ammonia (NH ₃ ) gas (nitride gas), carbon (C) containing gas such as propylene (C ₃ H ₆ ) gas, boron trichloride Using a boron (B) -containing gas such as (BCl ₃ ) gas or the like, an SiO ₂ film, a SiON film, a SiOCN film, a SiOC film, a SiCN film, a SiBN film, or a SiBCN film can be formed. Even in the case of performing these film formations, film formation can be performed under the same processing conditions as the above-described embodiments, and the same effects as in the above-described embodiments can be obtained.

In the above-described embodiment, an example of depositing a film on the wafer W has been described, but the present invention is not limited to such an embodiment. For example, it is applicable suitably even when a process such as oxidation treatment, diffusion treatment, annealing treatment, etching treatment is performed on the wafer W or the film formed on the wafer W.

In the above, although the invention made by the present inventors has been specifically described based on examples, the invention is not limited to the above embodiments and examples, and can be variously changed.

For example, three or more multi-processing module reaction chambers may be arranged for one gas supply device and configured to supply gas through a supply pipe having the same length. In addition, a person skilled in the art can easily apply to a device that executes two identical recipes of the same time at a predetermined time difference in parallel, not all of the gas used, but a part (for example, Si raw material gas).

3: Processing module
4: reaction tube
72: supply box
74: exhaust box
76: controller box
100: controller

Claims (10)

A first processing module having a first processing chamber for processing a plurality of substrates arranged in the vertical direction,
A second processing module disposed adjacent to the first processing chamber and having a second processing chamber for processing a plurality of substrates arranged in a vertical direction;
A first exhaust box containing a first exhaust system for exhausting the inside of the first processing chamber;
A second exhaust box containing a second exhaust system for exhausting the inside of the second processing chamber;
A common supply box for controlling at least one of a flow path or a flow rate of a plurality of process gases supplied to the first and second processing chambers;
A first valve group that connects a gas pipe from the common supply box to the first processing chamber so that a communication state can be controlled;
And a second valve group connecting the gas pipe from the common supply box to the second processing chamber so that the communication state can be controlled.
In the first and second processing modules, in order to produce the same film, a process of repeating a substantially same gas supply sequence is performed in parallel with shifting time,
The shift time is such that the first and later processing starts so that the supply timing of a specific gas among the plurality of processing gases does not overlap with the gas supply sequence of one of the first and second processing modules that first started processing. The substrate processing apparatus is determined by a method of slowing down the gas supply sequence of the other side of the second processing module. According to claim 1,
The first and second processing modules, the first and second exhaust boxes, and the first and second valve groups are respectively symmetrical to each other based on surfaces adjacent to the first and second processing modules. Is composed, and is also arranged,
The length of the plurality of gas distribution pipes between the first valve group and the first processing module is equal to the length of the corresponding gas distribution pipe between the second valve group and the second processing module. . According to claim 1,
The plurality of process gases includes three types of source gases,
The gas supply sequence is to periodically supply the three kinds of raw material gases to a processing chamber at a time interval,
While performing the gas supply sequence in parallel in the first and second processing modules, there is a timing in which each of the three types of raw material gases is supplied with timing that is not supplied to either of the first and second processing chambers. Device. According to claim 2, A first process controller for controlling the first processing module, the first exhaust box and the first valve group,
Further comprising a second process controller for controlling the second processing module, the second exhaust box and the second valve group,
The first and second process controllers transmit information substantially indicating flow states of the first and second valve groups, which are respectively controlled, to other process controllers, and in the first and second valve groups The substrate processing apparatus of claim 1, wherein the first and the second processing modules are operated asynchronously, while the simultaneous supply of valves of the same gas is prohibited. According to claim 1,
The plurality of process gases includes three types of source gases,
The gas supply sequence is to periodically supply the three kinds of raw material gases to a processing chamber at a time interval,
The gas supply sequence, at least during the time interval, the substrate processing apparatus is exhausted by the first or second exhaust system. The method of claim 5,
The exhaust includes an exhaust process in which exhaust by the first or second exhaust system is performed, and a purge process in which exhaust is performed by the first or second exhaust system while flowing purge gas after the exhaust process. The method of claim 5,
The said shift | offset | difference time is a board | substrate processing apparatus in the said gas supply sequence, the supply time of which is the longest supply time among the three types of raw material gases. The method of claim 5,
The shift time is further limited based on the rule that the timings of exhausting the first gas and the second gas contained in the three types of raw gas gas do not overlap between the first processing module and the second processing module. Device. The method of claim 5,
The misalignment time is based on a rule that the end of the purge process of the first gas contained in the three types of source gas and the exhaust process of the second gas do not overlap between the first processing module and the second processing module. Thus, the substrate processing apparatus is further limited. A first processing module having a first processing chamber for processing a plurality of substrates arranged in the vertical direction, and a second processing chamber disposed adjacent to the first processing chamber and processing a plurality of substrates arranged in the vertical direction. A first exhaust box containing a processing module, a first exhaust system for exhausting the interior of the first processing chamber, a second exhaust box containing a second exhaust system for exhausting the interior of the second processing chamber, and the first and second A first valve group that connects a common supply box for controlling at least one of a flow path or a flow rate of a plurality of process gases supplied into the processing chamber, and a gas pipe from the common supply box to the first processing chamber so that a communication state can be controlled. And a second valve group for controlably connecting a gas pipe from the common supply box to the second processing chamber in a communication state, the first processing chamber and the second processing of the substrate processing apparatus. A step of, respectively, carry a plurality of substrates arranged in a vertical direction;
In the said 1st and 2nd processing module, the process which repeats substantially the same gas supply sequence in order to produce the same film | membrane is carried out in parallel with the time shifted,
The shift time is such that the first and later processing starts so that the supply timing of a specific gas among the plurality of processing gases does not overlap with the gas supply sequence of one of the first and second processing modules that first started processing. A method of manufacturing a semiconductor device, which is determined by a method of slowing down the gas supply sequence of the other side of the second processing module.

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