CN105316654B - Film formation device and film build method - Google Patents
Film formation device and film build method Download PDFInfo
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- CN105316654B CN105316654B CN201510348818.7A CN201510348818A CN105316654B CN 105316654 B CN105316654 B CN 105316654B CN 201510348818 A CN201510348818 A CN 201510348818A CN 105316654 B CN105316654 B CN 105316654B
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Abstract
The present invention provides a kind of film formation device and film build method, it carries out batch-type ALD film forming, gas delivery volume can not be increased, and the reduction of productive temp can be suppressed, improve the generation of the reaction product of the utilization ratio, suppression of processing gas in exhaust channel.Batch-type film formation device (100) includes multiple process chambers (15), gas feed unit (2), exhaust unit (3) and control unit (4).Exhaust unit has 2 exhaust channels corresponding with the first processing gas and second processing gas respectively；With the exhaust channel switching part (34,35) of 2 exhaust channels of switching, control unit controls gas feed unit, so that when supplying the first processing gas and second processing gas from gas feed unit to process chamber, a kind of processing gas is supplied to chambers successively in a manner of with the time difference, and control exhaust channel switching part so that be vented via the corresponding exhaust channel of processing gas with being supplied to chambers.
Description
Technical field
The present invention relates to the film formation device and film build method for carrying out batch-type ALD film process.
Background technology
Flat plate panel display (FPD), solar cell module in liquid crystal display and organic el display etc. etc.
In manufacturing process, for the processed substrate of glass substrate etc., film process and etching process are carried out in order to form distribution etc..
Substrate for FPD etc. is the substrate of large area mostly, in addition, film process and etching process use mostly etc. from
Daughter, for carrying out the processing units of these processing in order to avoid maximizing and complicating, main flow is seriatim carries out to substrate
The one chip processing unit of processing, but in the case of attention efficiency and output, motion handles together multiple substrates in batches
Formula processing unit (for example, patent document 1).
On the other hand, recently, can be with good gradient coating performance as the film build method for carrying out film process
The atomic layer method of piling (ALD) of the relatively thin film of (step coverage) film forming gets most of the attention.ALD is located being configured with
In the process container for managing substrate, by it is a variety of, typically 2 kinds of processing gas alternately supply, pressed on the surface of processed substrate
Each atomic layer (or layer of thickness proximate to it) accumulation, makes these processing gas be reacted on processed substrate, thus
The method of film as defined in film forming.
But patent document 1 described above is such, by the merely assortment in the vertical direction in large-scale process container
In the case of the batch-type ALD film forming for configuring the substrate that the processing unit that multiple substrates are handled is used for large area, handling
Need to switch over importing to substantial amounts of processing gas with the short time in container, it is difficult to be uniformly supplied to processing gas multiple
The surface of substrate and equably it is vented, exists and be difficult to obtain the problem of uniform film is such.
Therefore, motion has in patent document 2, and multiple process chambers (place is set in a manner of corresponding respectively with multiple substrates
Reason is with small space), into these multiple process chambers importing each processing gas carries out the film forming based on ALD.
Prior art literature
Patent document
Patent document 1：Unexamined Patent 8-8234 publications
Patent document 2：JP 2013-030751 publications
The content of the invention
Technical problems to be solved are thought in invention
But recently, in batch-type ALD film formation devices, in order to improve the efficiency of processing, it is desirable to substrate it is further
The increase of the substrate number of maximization and each batch processing, it is therefore necessary to significantly increase the quantity delivered of processing gas.As making
The method of the quantity delivered increase of processing gas, consideration make gas feed unit maximize and increase processing gas supply capacity,
In this case, installation cost rises.On the other hand, in the case where gas feed unit can not be made to maximize, consider to pass through
Extending the service time of processing gas ensures necessary gas delivery volume, but in this case, productive temp deteriorates.In addition,
Due to a variety of processing gas that circulated in exhaust channel, therefore a variety of processing gas mixing reaction of formation generations in exhaust channel
Thing, reaction product also largely produces in the case of more than the quantity delivered of processing gas, and the maintenance period of exhaust channel deteriorates.
The present invention completes in view of the above problems, and its problem is to provide a kind of film formation device and film build method, can not
Increase gas delivery volume, and strongly suppress the reduction of productive temp, improve the utilization ratio of processing gas and suppress be vented
Carry out to the generation of reaction product in path batch-type ALD film forming.
For solving the technical scheme of problem
In order to solve above-mentioned problem, the first aspect of the present invention provides a kind of film formation device, and it is by a variety of processing gas
Supplied in a manner of switching successively, the batch-type film formation device of film as defined in formation on multiple processed substrates, film forming dress
It is characterised by, including：Multiple process chambers that processed substrate is stored one by one；Above-mentioned multiple process chambers are supplied successively respectively
The gas feed unit of a variety of processing gas；The exhaust unit that above-mentioned multiple process chambers are exhausted；With control to above-mentioned more
The control unit of supply and the exhaust of the processing gas of individual process chamber, above-mentioned exhaust unit include：Respectively with above-mentioned a variety of processing gas
Multiple exhaust channels corresponding to body；With the exhaust channel switching part for switching above-mentioned exhaust channel, above-mentioned control unit controls above-mentioned gas
Object supply unit so that when supplying processing gas from above-mentioned gas feed unit to above-mentioned process chamber, by a kind of processing gas
It is supplied to chambers successively in a manner of with the time difference, and above-mentioned control unit controls above-mentioned exhaust channel switching part, makes
When being exhausted using above-mentioned exhaust unit, arranged via the corresponding exhaust channel of processing gas with being supplied to chambers
Gas.
Be configured in above-mentioned first aspect, above-mentioned gas feed unit at least supplied a kind of processing gas it
Afterwards, before supplying next processing gas, supplied to above-mentioned multiple process chambers for the inside progress to above-mentioned multiple process chambers
The purge gas of purging, above-mentioned control unit control above-mentioned exhaust channel switching part so that switch row during purge gas is supplied
Gas path.
The second aspect of the present invention provides a kind of film formation device, and it is to replace the first processing gas and second processing gas
Ground switching supply, the batch-type film formation device of film as defined in formation, the feature of the film formation device exist on multiple processed substrates
In, including：Multiple process chambers that processed substrate is stored one by one；Above-mentioned multiple process chambers are alternately supplied at first respectively
The gas feed unit of process gases and second processing gas；The exhaust unit that above-mentioned multiple process chambers are exhausted；And control
The control unit of supply and exhaust to the processing gas of above-mentioned multiple process chambers, above-mentioned exhaust unit include：At above-mentioned first
2 exhaust channels corresponding to process gases and above-mentioned second processing gas difference；With the row switched over to above-mentioned 2 exhaust channels
Gas path switching part, above-mentioned control unit control above-mentioned gas feed unit so that from above-mentioned gas feed unit to from above-mentioned
When managing room above-mentioned first processing gas of supply and above-mentioned second processing gas, by a kind of processing gas in a manner of with the time difference
Chambers are supplied to successively, and above-mentioned control unit controls above-mentioned exhaust channel switching part so that utilizing above-mentioned exhaust list
When member is exhausted, it is vented via the corresponding exhaust channel of processing gas with being supplied to chambers.
Be configured in above-mentioned second aspect, above-mentioned gas feed unit at least supplied the first processing gas it
Afterwards, to supply before second processing gas and after having supplied second processing gas, to supply the first processing gas before, supply
Above-mentioned exhaust channel switching part is controlled to for the purge gas to being purged in above-mentioned process chamber, above-mentioned control unit so that
Switch exhaust channel during purge gas is supplied.In addition, above-mentioned gas feed unit includes：Supplied to above-mentioned multiple process chambers
First processing gas supplying tubing of above-mentioned first processing gas；Above-mentioned second processing gas is supplied to above-mentioned multiple process chambers
Second processing gas supplying tubing；It is arranged at the first supply valve of above-mentioned first processing gas supplying tubing；It is above-mentioned with being arranged at
Second supply valve of second processing gas supplying tubing, above-mentioned control unit and above-mentioned first supply valve and above-mentioned second supply valve
On-off action linkedly controls the switching of the exhaust channel carried out using above-mentioned exhaust channel switching part.
In addition, being configured in above-mentioned second aspect, above-mentioned exhaust channel switching part includes being respectively arranged at above-mentioned 2
Individual exhaust channel, the gas exhausting valve that can be opened and closed.It can also be configured to include the branch for being arranged at above-mentioned 2 exhaust channels
The switching valve in portion.
Also, can also be configured in above-mentioned first aspect and second aspect, above-mentioned chambers formed by for
The region that the cover of processed substrate on the mounting table and the above-mentioned mounting table of covering of the processed substrate of mounting surrounds, it is above-mentioned multiple
Process chamber arranges in vertical direction in process container.
The third aspect of the present invention provides a kind of film build method, and it is to be processed in batch-type film formation device on substrate
The method of film as defined in formation, above-mentioned film formation device include：Multiple process chambers that processed substrate is stored one by one；To above-mentioned more
Individual process chamber supplies the gas feed unit of a variety of processing gas successively respectively；With the row that above-mentioned multiple process chambers are exhausted
Gas unit, above-mentioned film build method are characterised by：As above-mentioned exhaust unit use with respectively with above-mentioned a variety of processing gas
The exhaust unit of corresponding multiple exhaust channels, when supplying processing gas from above-mentioned gas feed unit to above-mentioned process chamber,
A kind of processing gas is supplied to chambers successively in a manner of with the time difference, and carried out using above-mentioned exhaust unit
During exhaust, switching exhaust channel causes via the corresponding exhaust channel exhaust of processing gas with being supplied to chambers.
It is configured in the above-mentioned third aspect, at least after a kind of processing gas has been supplied, supplies next place
Before process gases, supplied from above-mentioned gas feed unit to above-mentioned multiple process chambers for being carried out to above-mentioned multiple inner treatment chambers
The purge gas of purging, switch exhaust channel during purge gas is supplied.
The fourth aspect of the present invention provides a kind of film build method, and it is to be processed in batch-type film formation device on substrate
The method of film as defined in formation, above-mentioned film formation device include：Multiple process chambers that processed substrate is stored one by one；To above-mentioned more
Individual process chamber alternately supplies the gas feed unit of the first processing gas and second processing gas respectively；With to above-mentioned multiple places
The exhaust unit that reason room is exhausted, above-mentioned film build method are characterised by：As above-mentioned exhaust unit use with respectively with
The exhaust unit of 2 exhaust channels, is supplied from above-mentioned gas corresponding to above-mentioned first processing gas and above-mentioned second processing gas
Above-mentioned first processing gas is supplied to above-mentioned process chamber and during above-mentioned second processing gas, to unit by a kind of processing gas to have
The mode of having time difference is supplied to chambers successively, and when being exhausted using above-mentioned exhaust unit, switching exhaust is logical
Road causes via the corresponding exhaust channel exhaust of processing gas with being supplied to chambers.
It is configured in above-mentioned fourth aspect, at least after the first processing gas has been supplied, supplies at second
Before process gases and after having supplied second processing gas, to supply the first processing gas before, supply for above-mentioned place
The indoor purge gas purged of reason, switches exhaust channel during purge gas is supplied.
Invention effect
In the present invention, in batch-type ALD film process, cut by using timesharing supply mode and according to processing gas
Both exhaust channels are changed, following effect can be played：Do not increase gas delivery volume, and the drop of productive temp can be suppressed
The generation of utilization ratio, reaction product of the suppression in exhaust channel low, that improve processing gas.
Brief description of the drawings
Fig. 1 is the summary construction diagram for the film formation device for representing an embodiment of the invention.
Fig. 2 is the schematic diagram for the gas supply system and gas extraction system for representing existing one chip ALD film formation devices.
Fig. 3 is the schematic diagram for the gas supply system and gas extraction system for representing existing batch-type ALD film formation devices.
Fig. 4 is by when the opening and closing moment of valve during progress one chip ALD film forming and the existing batch-type ALD film forming of progress
The opening and closing moment of valve compares the timing diagram of expression.
Fig. 5 be valve when will carry out existing one chip ALD film forming the opening and closing moment with existing batch-type ALD film forming
The opening and closing moment of valve when time-division processing is carried out in device compares the timing diagram of expression.
Fig. 6 is gas supply system and the signal of gas extraction system for the film formation device for representing an embodiment of the invention
Figure.
Fig. 7 be by carry out one chip ALD film forming when valve opening and closing the moment with carry out present embodiment batch-type ALD into
The opening and closing moment of valve during film compares the timing diagram of expression.
Fig. 8 is the skeleton diagram for the other examples for representing exhaust unit.
Description of reference numerals
1：Processing unit
2：Gas feed unit
3：Exhaust unit
4：Control unit
11：Process container
12：Processing unit
13：Mounting table
14：Cover
15、15-1、15-2、15-3、15-4：Process chamber
21：First processing gas supply source
22：Second processing gas supply source
23：Purge gas supply source
24：First processing gas supplying tubing
25：Second processing gas supplying tubing
26：Purge gas supplying tubing
27、27-1、27-2、27-3、27-4：First supply valve
28、28-1、28-2、28-3、28-4：Second supply valve
29：3rd supply valve
31、31-1、31-2、31-3、31-4：It is vented pipe arrangement
32、32-1、32-2、32-3、32-4：First branch's pipe arrangement
33、33-1、33-2、33-3、33-4：Second branch's pipe arrangement
34、34-1、34-2、34-3、34-4：First row air valve
35、35-1、35-2、35-3、35-4：Second row air valve
36：First shares exhaust pipe arrangement
37：Second shares exhaust pipe arrangement
38：First vavuum pump
39：Second vavuum pump
40：First discharge waste gas treatment equipment
41：Second discharge waste gas treatment equipment
42：Automatic pressure control valve
100：Film formation device
S：Processed substrate
Embodiment
Hereinafter, embodiments of the present invention are illustrated referring to the drawings.
Fig. 1 is the summary construction diagram for the film formation device for representing an embodiment of the invention.The film formation device 100 is formed
For batch-type ALD film formation devices, using ALD to film as defined in multiple processed substrate film forming.As processed substrate, preferably
As the rectangular substrate of the FPD large area used with glass substrate or glass substrate used for solar batteries, but it is not limited to
This.
Film formation device 100 includes；Multiple processed substrate S are carried out with the place of film process in independent process chamber respectively
Manage unit 1；For the gas feed unit 2 to supply gas in the chambers in processing unit 1；To in processing unit 1
The exhaust unit 3 being exhausted in chambers；With control unit 4.
Processing unit 1 has the process container 11 for being used for storing multiple substrate S；With formed in the process container 11 with it is multiple
Multiple processing units 12 of process chamber 15 corresponding to substrate difference.Multiple processing units 12 (process chamber 15) arrange in process container 11
In vertical direction.In addition, in Fig. 1,4 processing units 12 (process chamber 15), (process chamber of processing unit 12 are depicted for convenience
15) quantity, the i.e. quantity of the substrate S of single treatment is not limited thereto.
Each processing unit 12 has the mounting table 13 for being used for loading processed substrate S；With being processed in covering mounting table 13
Substrate S cover 14, process chamber 15 is formed in the part surrounded by mounting table 13 and cover 14.At least one party of mounting table 13 and cover 14
It is configured to movable up and down, in the state of making mounting table 13 and cover 14 leaves, can be carried out by conveying mechanism (not shown) pair
The processed substrate S of the conveying of mounting table 13 conveying action.Conveying mechanism can be the machine for conveying multiple processed substrate S in the lump
Structure or the mechanism conveyed one by one.(do not scheme in addition, being provided with seal member between mounting table 13 and cover 14
Show), airtight process chamber 15 is formd in the state of closed cap 14.In addition, though it is not shown, but in the side of process container 11
Wall is provided with the carrying-in/carrying-out mouth for moving into and taking out of processed substrate S, and the carrying-in/carrying-out mouth can be opened and closed using gate valve.
The built-in having heaters (not shown) in mounting table 13, in film process, by the processed base in mounting table 13
Plate S is heated to be suitable for the desired treatment temperature of film forming.
Gas feed unit 2 includes：Supply the first processing gas supply source 21 of the first processing gas；Supply second processing
The second processing gas supply source 22 of gas；Supply the purge gas supply source 23 of purge gas；Supplied from the first processing gas
Source 21 supplies the first processing gas supplying tubing 24 of the first processing gas into chambers 15；Supplied from second processing gas
Source 22 supplies the second processing gas supplying tubing 25 of second processing gas into chambers 15；From purge gas supply source 23
The purge gas supplying tubing 26 of purge gas is supplied into chambers 15；It is arranged at the first processing gas supplying tubing 24
First supply valve 27；It is arranged at the second supply valve 28 of second processing gas supplying tubing 25；Supplied with purge gas is arranged at
3rd supply valve 29 of pipe arrangement 26.There is first processing gas supply pipe 24 master from the extension of the first processing gas supply source 21 to match somebody with somebody
Pipe 24a；With the branch pipe arrangement 24b being connected from main pipe arrangement 24a branches with chambers 15, second processing gas supplying tubing 25
With the main pipe arrangement 25a extended from second processing gas supply source 22；It is connected with from main pipe arrangement 25a branches with chambers 15
Branch pipe arrangement 25b, purge gas supplying tubing 26 have from purge gas supply source 23 extend main pipe arrangement 26a；With from master
Pipe arrangement 26a branches and the branch pipe arrangement 26b being connected with chambers 15.First supply valve 27, the second supply valve 28 and the 3rd supply
Branch pipe arrangement 24b, 25b, 26b are respectively arranged to valve 29.The cover 14 of branch pipe arrangement 24b, 25b, 26b with forming process chamber 15
The side wall connection of one side.
In gas feed unit 2, by the way that the first supply valve 27 and the second supply valve 28 are alternately intermittently opened and closed, energy
It is enough to be alternately intermittently supplied to the first processing gas and second processing gas in chambers 15.At this moment, the first processing gas
Body and second processing gas are always supplied to, and the opening and closing by the first supply valve 27 and the second supply valve 28 is in be supplied in a pulsed manner
Process chamber 15 is given to, is not supplied with the processing gas of process chamber 15 by bypass pipe arrangement (not shown) not via the ground of process chamber 15
It is passed to gas extraction system and goes out of use.In addition, in film process, the 3rd supply valve 29 is always turned on, and purge gas is always
It is fed into process chamber 15.Throughout manage in room 15, be opened the phase that the first processing gas is supplied in the first supply valve 27
Between and the second supply valve 28 be opened second processing gas be supplied to during between during, the first supply valve 27 and second
Supply valve 28 is closed, and only purge gas is supplied to, and chambers 15 are purged.In addition, in the first supply valve 27 and
Two supply valves 28 are opened, and when the first processing gas and second processing gas are supplied to, purge gas also has as at these
The effect of the vector gas of process gases.In addition, although it is not shown, but in the first processing gas supplying tubing 24, second processing gas
Body supplying tubing 25 and purge gas supplying tubing 26 are provided with flow controller (not shown).
Exhaust unit 3 includes：The multiple exhaust pipe arrangements 31 being connected with chambers 15；Divide respectively from multiple exhaust pipe arrangements 31
The first branch's pipe arrangement 32 and second branch's pipe arrangement 33 of branch；It is respectively arranged at first branch's pipe arrangement 32 and second branch's pipe arrangement 33
First row air valve 34 and second row air valve 35；First be connected with multiple first branches pipe arrangement 32 shares exhaust pipe arrangement 36；With it is more
The second shared exhaust pipe arrangement 37 that individual second branch pipe arrangement 33 connects；It is common to be respectively arranged at the first shared exhaust pipe arrangement 36 and second
With the first vavuum pump 38 and the second vavuum pump 39 of exhaust pipe arrangement 37；It is common to be respectively arranged at the first shared exhaust pipe arrangement 36 and second
With the first vavuum pump 38 of exhaust pipe arrangement 37 and the first discharge waste gas treatment equipment 40 and the in the downstream of the second vavuum pump 39
Two discharge waste gas treatment equipments 41.Each exhaust pipe arrangement 31 is provided with automatic pressure control valve (APC) 42.Exhaust pipe arrangement 31 connects
Side wall in cover 14, with being connected with branch pipe arrangement 24b, 25b, 26b the opposite side of side wall for forming process chamber 15.
First branch's pipe arrangement 32 and first shares the exhaust channel that exhaust pipe arrangement 36 forms the first processing gas, the second branch
Pipe arrangement 33 and second shares the exhaust channel that exhaust pipe arrangement 37 forms second processing gas.
It is to implement to be used in discharge waste gas that first discharge waste gas treatment equipment 40 and second, which discharges waste gas treatment equipment 41,
The innoxious processing of harmful components equipment, be that can use heatable catalytic formula, combustion-type, absorption type, plasma reaction
The equipment of the mode known in the art such as formula.Having heaters (not shown) is set around exhaust pipe arrangement 31, thus, to row
Gas pipe arrangement 31 is heated, and suppresses the generation of unwanted deposit.In addition it is also possible to first and second branch's pipe arrangements 32,
33 and first and second share exhaust pipe arrangement 36,37 set heater.
First vavuum pump 38 and the second vavuum pump 39, which can be suitably used, to be had：Mechanical booster pump (Mechanical
Booster pumps) or turbine pump etc. the forepump for being capable of high vacuum exhaustion；With the back pressure for making forepump
The pump for the rear class vavuum pump that the roughing vacuum pump of dry pump as defined vacuum etc. is formed.
First row air valve 34 and second row air valve 35 play function as the exhaust channel switching part of switching exhaust channel, beat
Open a side of first row air valve 34 and second row air valve 35 and close the opposing party, thus, it is possible to selectively make discharge waste gas circulate
To any one party of first branch's pipe arrangement 32 and second branch's pipe arrangement 33.Specifically, closed in opening first row air valve 34
In the case of second row air valve 35, select first branch's pipe arrangement 32 and the first shared exhaust pipe arrangement 36 to be used as exhaust channel, utilize
First vavuum pump 38 is vented via these pipe arrangements, in the case where opening second row air valve 35 closes first row air valve 34, choosing
Select second branch's pipe arrangement 33 and the second shared exhaust pipe arrangement 37 is used as exhaust channel, using the second vavuum pump 39 via these pipe arrangements
Exhaust.In addition, when purge gas is vented, if each processing gas from process chamber 15 and exhaust pipe arrangement 31 fully by
After removing, then two sides of first row air valve 34 and second row air valve 35 are opened, can be arranged via the exhaust channel of two sides
Gas.
Control unit 4 is used for the part of each constituting portion of film formation device 100 such as control valve, vavuum pump, heater, has micro- place
Manage device (computer).Control unit 4 preserves processing scheme in its storage medium, is used to perform regulation by film formation device 100
Processing program, recall arbitrary processing scheme, in film formation device 100 perform as defined in handle.
Particularly, when carrying out film forming using ALD, control unit 4 is controlled in the following manner, will be with chambers 15
The corresponding supply valve 28 of first supply valve 27 and second is alternately intermittently developed, successively alternately by the first processing gas and
Two processing gas are supplied in chambers 15.At this moment the number of occurrence can appoint according to material and thickness for carrying out film forming etc.
Anticipate number, but typically hundreds of time circulations or its more than.At this moment, supplied to chambers 15 at the first processing gas and second
During process gases, the opening and closing moment of multiple supply valves 28 of first supply valve 27 and second is controlled so that on a kind of processing gas, with
Poorly it is supplied to chambers 15 (hereinafter referred to as timesharing supply mode) successively with the time.In addition, with by the 3rd during film forming
Supply valve 29 is always opened, and the mode that purge gas always circulates is controlled.Therefore, during open first supply valve 27
With during open second supply valve 28 between during, the first supply valve 27 and the second supply valve 28 are closed, and only circulation is blown
Scavenging body, to being purged in process chamber 15.
In addition, control unit 4 controls the opening and closing of first row air valve 34 and second row air valve 35, and carry out the switching of exhaust channel
Control so that throughout manage in room 15, exhaust channel is switched according to the processing gas supplied from gas feed unit 2.That is, when
Opened in chambers 15 first supply valve 27 supply the first processing gas when, control unit 4 with open first row air valve 34 and
Second row air valve 35 is closed, discharge waste gas is passed to the mode of the side of first branch's pipe arrangement 32 and is controlled, also, opening
Second supply valve 28 supply second processing gas when, control unit 4 to close first row air valve 34 and open second row air valve 35,
Make discharge waste gas be passed to the mode of the side of second branch's pipe arrangement 33 to be controlled.That is, supplied with the first supply valve 27 and second
Mutually linkedly control plays the first row air valve 34 and second exhaust of function as exhaust channel switching part to the on-off action of valve 28
The opening and closing of valve 35.In addition, at the time of exhaust channel is switched between first branch's pipe arrangement 32 and second branch's pipe arrangement 33,
Preferably to during being purged in process chamber 15.
Then, the action of the film formation device to so forming illustrates.
First, multiple processed substrate S are moved into process container 11, mounting throughout reason portion 12 mounting table 13 it
On, purge gas is supplied from purge gas supply source 23, and using exhaust unit 3 to being exhausted in chambers 15, will
Defined pressure is adjusted in chambers 15, starts ALD film forming.
, will corresponding with chambers 15 first supply valve 27 and the second supply valve in the ALD film forming of present embodiment
28 alternately intermittently open, and make to the process of the first processing gas of supply in chambers 15 and supply second processing gas
Process is alternately intermittently carried out, and during film forming, is always opened the 3rd supply valve 29, purge gas is always circulated, and
During open first supply valve 27 with the second supply valve 28 of exploitation during between during, implement to entering in process chamber 15
The purging process of row purging.On the other hand, the exhaust of chambers 15, the first processing gas is supplied opening the first supply valve 27
When, open first row air valve 34 and closing second row air valve 35 makes discharge waste gas be passed to the side of first branch's pipe arrangement 32, and
And when opening the second supply valve 28 supply second processing gas, close first row air valve 34 and open second row air valve 35
Discharge waste gas is set to be passed to the side of second branch's pipe arrangement 33.
Such ALD film forming can illustrate：For example, as the first processing gas use trimethyl aluminium (TMA,
Trimethylaluminum), H is used as second processing gas2Oxidant as O, N is used as purge gas2Deng
Inertness gas, on processed substrate S, TMA is adsorbed by the process for supplying the first processing gas, implementing to purge work
After sequence, H is made by the process for supplying second processing gas2O is adsorbed, by they react film forming one atomic layer (or
The layer of close thickness with an atomic layer) aluminum oxide (Al2O3) elementary membrane, then, it will implement to circulate in fact as purging process
Stipulated number is applied, the pellumina of thickness as defined in film forming.
At this moment, in the present embodiment, as explained below, in batch-type ALD film process, timesharing supplying party is carried out
The switching of formula and exhaust channel.It is unobtainable aobvious in the batch-type ALD film formation devices of prior art thereby, it is possible to obtain
Write effect.
In order to be described in detail on this point, first, one chip ALD film forming and prior art to prior art
Batch-type film forming illustrates.
Fig. 2 is the gas supply system of one chip ALD film formation devices and the schematic diagram of gas extraction system for representing prior art,
Fig. 3 is the gas supply system of batch-type ALD film formation devices and the schematic diagram of gas extraction system for representing prior art, and Fig. 4 is table
Show opening for the valve during carry out batch-type ALD film forming by the opening and closing moment of valve when carrying out one chip ALD film forming and prior art
The timing diagram to compare constantly is closed, Fig. 5 is at the time of representing the opening and closing by the valve during one chip ALD film forming for carrying out prior art
Timing diagram compared with the opening and closing moment of valve during with carrying out time-division processing in the batch-type ALD film formation devices of prior art.This
Outside, for convenience, in figs. 2 and 3, the feed system and automatic pressure control valve (APC) of purge gas are eliminated, in addition,
In Fig. 3 batch-type film formation device, illustrating has a case that 4 process chambers, to multiple process chambers, air supply valve, row
Air valve etc. marks different references.In addition, in Fig. 4, Fig. 5 timing diagram, there is shown 3 circulations of ALD film forming.
As shown in Fig. 2 the one chip ALD film formation devices of prior art, to single process chamber 15 from the first processing gas
Supply source 21 and second processing gas supply source 22 supply via the first processing gas supplying tubing 24 and second processing gas respectively
To pipe arrangement 25, the first processing gas and second processing gas are supplied to process chamber 15.At this moment, by by the He of the first supply valve 27
Second supply valve 28 is alternately intermittently opened and closed, and the first processing gas and second processing gas are alternately intermittently supplied everywhere
Manage in room 15.Discharge exhaust gas utilization vavuum pump 53 in process chamber 15 is vented via exhaust pipe arrangement 51, and discharge waste gas passes through row
It is processed to go out waste gas treatment equipment 54.Exhaust pipe arrangement 51 is provided with air bleeding valve 52, is opened in film process.
In the one chip ALD film formation devices of the prior art, as shown in Fig. 4 (a), during ALD film forming in, always
Purge gas is supplied in process chamber 15, while the first supply valve 27 and the second supply valve 28 are alternately intermittently opened and closed.
Thus, supply the process (S1) of the first processing gas and supply the process (S2) of second processing gas alternately intermittently by reality
Apply, 28 pent period of the first supply valve 27 and the second supply valve between them, purge gas is only supplied, to process chamber
The first purging process (S3), the second purging process (S4) purged in 15 is carried out.Also, until it can obtain desired
Thickness untill, the alternative supply of the first processing gas and second processing gas is repeated more than for example hundreds of circulations.
On the other hand, the batch-type ALD film formation devices of the prior art shown in Fig. 3 have the first process chamber 15-1, second
This four process chambers of process chamber 15-2, the 3rd process chamber 15-3 and fourth processing chamber 15-4, gas is handled from first to chambers
Body supply source 21 and second processing gas supply source 22 are respectively via the first processing gas supplying tubing 24 and second processing gas
Supplying tubing 25 supplies the first processing gas and second processing gas.First processing gas supplying tubing 24 has：At first
The main pipe arrangement 24a that process gases supply source 21 extends；With from main pipe arrangement 24a branches and with the first process chamber 15-1~fourth processing chamber
Branch pipe arrangement 24b-1,24b-2,24b-3,24b-4 of 15-4 connections.Second processing gas supplying tubing 25 has：At second
The main pipe arrangement 25a that process gases supply source 22 extends；With from main pipe arrangement 25a branches and with the first process chamber 15-1~fourth processing chamber
Branch pipe arrangement 25b-1,25b-2,25b-3,25b-4 of 15-4 connections.At this moment, with the first process chamber 15-1~fourth processing chamber
Branch's pipe arrangement 24b-1~24b-4 corresponding to 15-4, first supply valve 27-1,27-2,27-3,27-4 is respectively arranged with, with
One process chamber 15-1~branch's pipe arrangement 25b-1~25b-4 corresponding to fourth processing chamber 15-4, is respectively arranged with the second supply valve
28-1、28-2、28-3、28-4.By make first supply valve 27-1,27-2,27-3,27-4 and second supply valve 28-1,28-2,
28-3,28-4 are synchronous and are alternately intermittently opened and closed, and the first processing gas and second processing gas are alternately intermittently supplied
Into the first process chamber 15-1~fourth processing chamber 15-4.First process chamber 15-1~fourth processing chamber 15-4 is connected to row
Gas pipe arrangement 51-1~51-4, these exhausts pipe arrangement 51-1~51-4, which is connected with, shares exhaust pipe arrangement 55, by matching somebody with somebody with shared exhaust
The vavuum pump 53 that pipe 55 connects, chambers are vented via exhaust pipe arrangement 51-1~51-4 and shared exhaust pipe arrangement 55, arranged
It is processed via discharge waste gas treatment equipment 54 to go out waste gas.Exhaust pipe arrangement 51-1~51-4 be respectively arranged with air bleeding valve 52-1~
52-4, it is opened in film process.
In the batch-type ALD film formation devices of the prior art, as shown in Fig. 4 (b), during ALD film forming in, make first
Supply valve 27-1,27-2,27-3,27-4 and second supply valve 28-1,28-2,28-3,28-4 synchronizations are simultaneously alternately intermittently opened
Close.In addition, in during ALD film forming, purge gas is always supplied with.Thus, to the first process chamber 15-1~fourth processing chamber
The process (S1) of the first processing gas of supply is with supplying the process (S2) of second processing gas alternately intermittently by reality in 15-4
Apply, 28 pent period of the first supply valve 27 and the second supply valve between them, be only supplied purge gas, implement to place
The first purging process (S3), the second purging process (S4) purged in reason room 15.In addition, the air bleeding valve in film process
52-1~52-4 is opened, via exhaust pipe arrangement 51-1~51-4 and the row of sharing in the first process chamber 15-1~fourth processing chamber 15-4
Gas pipe arrangement 55 is vented.
At this moment, quantity of the required quantity delivered of processing gas with process chamber compared with one chip film formation device correspondingly increases
Add.In addition, recently, the increased tendency of number of the substrate of maximization and the single treatment of substrate, thus, a secondary supply be present
Must measuring for processing gas dramatically increase.Correspondingly, in Fig. 4 (b) example, by the supply for extending processing gas
Time, to ensure necessary gas delivery volume.But understood according to Fig. 4 (a), (b), when extension the first processing gas and second
During the service time of processing gas, correspondingly productive temp (yield) deteriorates.And the deterioration of the productive temp is with ALD's
Period is correspondingly accumulated.
In order to suppress the deterioration of productive temp, it is necessary to increase unstrpped gas supply capacity, in this case, in order that gas
Feed unit maximizes and improves installation cost, and the utilization ratio of processing gas like that as demonstrated below reduces.
In ALD film forming, the first processing gas and second processing gas are alternately supplied in a pulsed manner to process chamber, existed
Processing gas is fed into process chamber and is used for the period (pulse ON) of film forming and for process chamber and the purging of exhaust channel
Deng and processing gas is not supplied to the period (pulse OFF) that process chamber is not used for film forming.On the other hand, processing gas
Supply mode there is various ways in which according to species of film forming raw material etc., for example, by gas raw material maintain the original state by mass flow control
Device (MFC) processed carries out flow control and supplies the mode of processing gas, by inertness gas in liquid charging stock, and carries out
Foaming (bubbling) mode of pressurization ground supply processing gas, makes raw material as ozone generator using plasma mechanism
Mode that gas activation is supplied to as processing gas etc., no matter in the case of any mode, in order to maintain stable gas
Quantity delivered, concentration, processing gas always must be supplied from gas feed unit in the execution of ALD processing, do not made in film forming
Period (pulse OFF), processing gas have to go out of use not via process chamber.The quantity delivered of processing gas is more at most
The discarded amount is more, and when increasing unstrpped gas supply capacity, the utilization ratio of processing gas reduces.
In the batch-type ALD film formation devices of prior art, in order that the supply capacity of processing gas and prior art
One chip ALD film formation devices are identical, and the first processing gas and the are being supplied to the first process chamber 15-1~fourth processing chamber 15-4
During two processing gas, the timesharing for making the first processing gas and the supply moment of second processing gas stagger by each process chamber supplies
It is effective to mode.I.e. as shown in Fig. 5 (b), first supply valve 27-1,27-2,27-3,27-4 is initially opened successively, makes confession
Process (S1) to the first processing gas has the time poorly successively relative to the first process chamber 15-1~fourth processing chamber 15-4
Carry out, then, open second supply valve 28-1,28-2,28-3,28-4 successively, make the process (S2) of supply second processing gas
Relative to the first process chamber 15-1~fourth processing chamber 15-4 there is the time poorly to carry out successively, and they are alternately entered repeatedly
OK.
But in the case where carrying out timesharing supply mode using the batch-type ALD film formation devices of prior art, such as Fig. 5
(b) shown in, when chambers are carried out with the supply of single treatment gas, the time difference is set to supply it respectively relative to chambers
Processing gas, until next processing gas can not be supplied at the end of supplying its processing gas to whole process chambers, also, due to
The regular hour must be separated between the timesharing supply of the first processing gas and the timesharing supply of second processing gas, thus it is raw
Production beat significantly deteriorates, and the deterioration of the productive temp and ALD period are correspondingly accumulated.And by Fig. 4 (b) and Fig. 5 (b) phases
Compare i.e. it can be appreciated that the deterioration of productive temp at this moment is compared in the batch-type ALD film formation devices of prior art without timesharing
In the case of supply mode significantly.Further, since such productive temp deteriorates, the discarded quantitative change of processing gas is more.
Like this, in the supply of processing gas once, until the supply knot of its processing gas to whole process chambers
Next processing gas is not supplied untill beam, in addition, being supplied in the timesharing supply of the first processing gas and the timesharing of second processing gas
Regular hour is set between giving, is to strongly prevent that the first processing gas occurs with second processing gas in exhaust channel
Mix and reaction of formation product.
But because exhaust channel is one in the batch-type ALD film formation devices of prior art, even if seeking such return
Strategy is kept away, the processing gas of the opposing party is supplied in the state of the processing gas of a side is remained, is not avoided that both are mixed
Close, the supply mode regardless of processing gas, be not avoided that the generation of reaction product.Reaction generation in exhaust channel
Thing increases with the increase of the quantity delivered of processing gas, the reaction product powder and blockage is matched somebody with somebody into exhaust, it is or right
Valve and pump produce baneful influence, and maintenance period deteriorates.In addition, cause the short service life of valve and pump.
Therefore, in the present embodiment, in batch-type ALD film formation devices, the processing gas of time per unit can be made
Necessary quantity delivered it is identical with one chip ALD film formation devices, and do not reduce the utilization ratio of productive temp and processing gas as far as possible,
Suppress the generation of the reaction product in exhaust channel, carry out batch-type ALD film forming.
Hereinafter, reference picture 6 and Fig. 7, by the one chip ALD film formation devices of prior art and the batch-type ALD of prior art
The film process of film formation device are compared, while the film process of the film formation device progress using present embodiment are said
It is bright.
Fig. 6 is the gas supply system for the film formation device for representing present embodiment and the schematic diagram of gas extraction system, and Fig. 7 is table
Show by carry out one chip ALD film forming when valve opening and closing at the time of with carry out present embodiment batch-type AlD film forming when valve
The timing diagram that is compared of opening and closing moment.In addition, for convenience, eliminate in figure 6 purge gas feed system and from
Dynamic pressure force control valve (APC), in addition, represent be that there are 4 process chambers, and to multiple process chambers, air supply valve,
Air bleeding valve etc. marks different references.It is other to mark identical reference with Fig. 1.In addition, in Fig. 7 timing diagram, with
Fig. 4, Fig. 5 are same, represent 3 circulations of ALD film forming.
As shown in fig. 6, the film formation device of present embodiment, in terms of with 2 exhaust channels with Fig. 3 prior art
Batch-type ALD film formation devices are different.That is, gas supply system is identical with Fig. 3, but with the first process chamber 15-1~fourth process
Exhaust pipe arrangement 31-1,31-2,31-3,31-4 of room 15-4 connections branch into first branch pipe arrangement 32-1,32-2,32-3,32-4
With second branch pipe arrangement 33-1,33-2,33-3,33-4, first exhaust is respectively arranged with first branch pipe arrangement 32-1~32-4
Valve 34-1,34-2,34-3,34-4, second branch pipe arrangement 33-1~33-4 be respectively arranged with second row air valve 35-1,35-2,
35-3、35-4。
In the film formation device of present embodiment, timesharing supply mode is used as shown in Fig. 7 (b), i.e.,：Originally, beat successively
First supply valve 27-1,27-2,27-3,27-4 is opened, the process (S1) of the first processing gas will be supplied relative to the first process chamber
There is 15-1~fourth processing chamber 15-4 the time poorly to carry out successively, then, open second supply valve 28-1,28-2,28- successively
3rd, 28-4, when the process (S2) for supplying second processing gas is had relative to the first process chamber 15-1~fourth processing chamber 15-4
Between poorly carry out successively, and by them alternately repeatedly.During between these processes, purge gas is only supplied, is blown
Sweep the purging process (S3, S4) of process chamber.Also, the first process chamber 15-1~fourth processing chamber 15-4 exhaust, opening the
When one supply valve 27-1~27-4 supplies the first processing gas, open first row air valve 34-1~34-4 and close second exhaust
Valve 35-1~35-4, discharge waste gas is set to be passed to first branch pipe arrangement 32-1~32-4 sides (the exhaust channel side of a side),
When opening second supply valve 28-1~28-4 supply second processing gases, close first row air valve 34-1~34-4 and open the
Two air bleeding valve 35-1~35-4, discharge waste gas is passed to second branch pipe arrangement 33-1~33-4 sides, (exhaust of the opposing party is led to
Trackside).It is carried out in the way for switching in purging process (S3, S4) of the exhaust channel.
Like this, by setting 2 exhaust channels for chambers, thus, it is possible to regard the exhaust channel of a side as the
The exhaust of one processing gas is used, and is used, can strongly be suppressed the exhaust channel of the opposing party as the exhaust of second processing gas
First processing gas and second processing gas mixing in exhaust channel, therefore, the processing gas of chambers is supplied and is vented
Action can independently be carried out with other process chambers.Therefore, in timesharing supply mode, for example, from supply the first processing gas to
When supplying second processing gas, it will not occur as the batch-type ALD film formation devices of prior art, until the processing to whole
Untill room the first processing gas of supply terminates, it is impossible to supply second processing gas, two processing gas in multiple process chambers
Service time it is overlapping can also.In addition, also without the timesharing supply in the first processing gas and point of second processing gas
When supply between the regular hour is set.In addition, according to timesharing supply mode, the supply capacity of processing gas and one chip
ALD film formation devices are identical.
Therefore, as shown in Fig. 7 (b), throughout manage in room, can be by identical with Fig. 7 (a) one chip ALD film process
At the time of supply the first processing gas and second processing gas, for one chip productive temp deterioration also only with initial stage
The time of timesharing, do not accumulate, therefore can significantly suppress the deterioration of productive temp compared with Fig. 4 (b) and Fig. 5 (b).In addition,
Compared with Fig. 4 (b) and Fig. 5 (b), the pulse ON of time per unit number increase, pulse OFF time is reduced, and is handled
The quantity delivered of gas is identical with one chip film formation device, therefore the discarded amount of processing gas is reduced, it is possible to increase processing gas
Utilization ratio.Also, because accordingly being shunted from being supplied to the processing gas of process chamber using different exhaust channels,
So can effectively suppress in exhaust channel 2 kinds of processing gas mixing and reaction of formation product, can mode be vented it is logical
The maintenance period on road deteriorates.
In addition, before ALD film forming starts, terminate after, by first row air valve 34-1~34-4 (first row air valve 34 in Fig. 1)
Opened with second row air valve 35-1~35-4 (second row air valve 35 in Fig. 1) two sides, be vented, can obtain from the exhaust channel of two sides
To higher exhaust capacity.In addition, in ALD film forming, when purging process (S3, S4), the situation of increase capacity is being needed
It is inferior, from process chamber 15-1~15-4 (process chamber 15 in Fig. 1) and it is vented pipe arrangement 31-1~31- if in each processing gas
After 4 (in Fig. 1 be vented pipe arrangements 31) are fully processed, in the way of these processes can also by first row air valve 34-1~
34-4 and second row air valve 35-1~35-4 two sides open, and are exhausted from the exhaust channel of two sides.In addition, in order to further
The shunting effect of exhaust channel is improved, makes to prevent that the effect of the mixing of the first processing gas and second processing gas is higher, also may be used
With in exhaust without using exhaust channel supply N2The inertness gas of gas etc., relatively improves pressure therein.And
And as first row air valve 34-1~34-4 and second row air valve 35-1~35-4, from for on-off action mechanism and sealing
Durability in terms of set out, can also without using the seal of O-ring etc. and use conductance vario valve.It is even such
Without using the material valve of seal, because most discharge waste gas (processing gas) is intentionally passed to exhaust channel, therefore
Desired effect can be obtained.
As described above, in present embodiment, in batch-type ALD film process, using timesharing supply mode and according to place
This two side of process gases switching exhaust channel, thus, it is possible to not increase gas delivery volume, and can play and strongly suppress life
The reduction of beat is produced, improves the utilization ratio of processing gas, the generation for suppressing reaction product in exhaust channel is so notable
Effect.
In addition, the invention is not limited in above-mentioned embodiment, there can be various modifications.For example, in above-mentioned embodiment
In, exemplified with the exhaust flow path switching part as switching exhaust flow path, using the air bleeding valve for being respectively arranged at 2 branch's pipe arrangements,
By the example of the opening and closing switching exhaust flow path of these valves, but be not limited to that this, as shown in figure 8, can also be used as everywhere
The exhaust flow path switching part of room is managed, single switching valve is set in the branch of first branch's pipe arrangement 32 and second branch's pipe arrangement 33
(triple valve) 45.Quantity thus, it is possible to further reduce valve.
In addition, in the above-described embodiment, exemplified with the situation of alternately 2 kinds of processing gas of supply, but to be supplied
The quantity of processing gas is not limited thereto, and can also be applied to the situation that timesharing supplies a variety of processing gas, with processing gas
Quantity branch's pipe arrangement is correspondingly set, according to processing gas switch exhaust flow path.
In addition, as processed substrate, as long as FPD substrate or semiconductor chip etc. can carry out ALD film forming
Substrate, it is not particularly limited.
Claims (9)
1. a kind of film formation device, it is supplies a variety of processing gas in a manner of switching successively, on multiple processed substrates
The batch-type film formation device of film as defined in formation, the film formation device be characterised by, including：
Multiple process chambers that processed substrate is stored one by one；
Supply the gas feed unit of a variety of processing gas successively respectively to the multiple process chamber；
The exhaust unit that the multiple process chamber is exhausted；With
The control unit of supply and the exhaust to the processing gas of the multiple process chamber is controlled,
The exhaust unit includes：Multiple exhaust channels corresponding with a variety of processing gas respectively；With the switching exhaust
The exhaust channel switching part of path,
The gas feed unit after a kind of processing gas in having supplied a variety of processing gas and will at least supply
Before next processing gas, the purging for being purged to the inside of the multiple process chamber is supplied to the multiple process chamber
Gas,
The control unit controls the gas feed unit so that at from the gas feed unit to the process chamber supply
During process gases, a kind of processing gas is supplied to chambers successively in a manner of with the time difference, and the control unit exists
During supplying purge gas, the exhaust channel switching part is controlled so that when being exhausted using the exhaust unit, via
The corresponding exhaust channel exhaust of processing gas with being supplied to chambers,
The control unit controls exhaust channel switching part when switching the exhaust channel so that is only being handled from described one kind
After exhaust channel exhaust corresponding to gas, via exhaust channel corresponding with a kind of processing gas and with next processing
Both exhaust channels corresponding to gas are vented, and afterwards, are only vented from exhaust channel corresponding with the next processing gas.
2. film formation device as claimed in claim 1, it is characterised in that：
Each process chamber formed by for load the mounting table of processed substrate and cover on the mounting table by
The region that the cover of substrate surrounds is managed, the multiple process chamber arranges in vertical direction in process container.
3. a kind of film formation device, it is that the first processing gas and second processing gas are alternately switched into supply, is located multiple
The batch-type film formation device of film as defined in being formed on substrate is managed, the film formation device is characterised by, including：
Multiple process chambers that processed substrate is stored one by one；
Alternately supply the gas feed unit of the first processing gas and second processing gas respectively to the multiple process chamber；
The exhaust unit that the multiple process chamber is exhausted；With
The control unit of supply and the exhaust to the processing gas of the multiple process chamber is controlled,
The exhaust unit includes：Corresponding 2 exhausts are logical respectively with first processing gas and the second processing gas
Road；With the exhaust channel switching part switched over to 2 exhaust channels,
The gas feed unit is at least after first processing gas has been supplied and to supply the second processing gas
Before and after the second processing gas has been supplied and before supplying first processing gas, supply for described
The purge gas purged in process chamber, the control unit control the gas feed unit so that are supplied from the gas
First processing gas is supplied to the process chamber and during the second processing gas, to unit by a kind of processing gas to have
The mode of having time difference is supplied to chambers successively, and the control unit controls the exhaust during purge gas is supplied
Path switching part so that when being exhausted using the exhaust unit, via the processing gas with being supplied to chambers
Corresponding exhaust channel exhaust,
The control unit controls exhaust channel switching part when switching the exhaust channel so that is only being handled from described first
Corresponding to gas exhaust channel exhaust after, via exhaust channel corresponding with first processing gas and with the second processing
Both exhaust channels corresponding to gas are vented, and afterwards, are only vented from exhaust channel corresponding with the second processing gas.
4. film formation device as claimed in claim 3, it is characterised in that：
The gas feed unit includes：The first processing gas that first processing gas is supplied to the multiple process chamber supplies
To pipe arrangement；The second processing gas supplying tubing of the second processing gas is supplied to the multiple process chamber；It is arranged at described
First supply valve of the first processing gas supplying tubing；With the second supply for being arranged at the second processing gas supplying tubing
Valve,
The on-off action of the control unit and first supply valve and second supply valve, which linkedly controls, utilizes the row
The switching for the exhaust channel that gas path switching part is carried out.
5. the film formation device as described in claim 3 or 4, it is characterised in that：
The exhaust channel switching part includes gas exhausting valve being respectively arranged at 2 exhaust channels, being opened and closed.
6. the film formation device as described in claim 3 or 4, it is characterised in that：
The exhaust channel switching part includes being arranged at the switching valve of the branch of 2 exhaust channels.
7. the film formation device as described in claim 3 or 4, it is characterised in that：
The chambers formed by for load the mounting table of processed substrate and cover on the mounting table by
The region that the cover of substrate surrounds is managed, the multiple process chamber arranges in vertical direction in process container.
8. a kind of film build method, it is in the method for film as defined in formation that is processed on substrate, institute in batch-type film formation device
Stating film formation device includes：Multiple process chambers that processed substrate is stored one by one；The multiple process chamber is supplied successively respectively
The gas feed unit of a variety of processing gas；With the exhaust unit that the multiple process chamber is exhausted, the film build method
It is characterised by：
The exhaust list with multiple exhaust channels corresponding with a variety of processing gas respectively is used as the exhaust unit
Member,
When supplying processing gas from the gas feed unit to the process chamber, by a kind of processing gas with the time difference
Mode be supplied to chambers successively,
And when being exhausted using the exhaust unit, switching exhaust channel causes via with being supplied to chambers
Exhaust channel corresponding to processing gas is vented,
At least after a kind of processing gas in having supplied a variety of processing gas and before supplying next processing gas,
The purging for being purged to the multiple inner treatment chamber is supplied from the gas feed unit to the multiple process chamber
Gas, switch exhaust channel during purge gas is supplied,
Switch the exhaust channel so that only after exhaust channel exhaust corresponding with a kind of processing gas, via with
The exhaust of both exhaust channel corresponding to a kind of processing gas and exhaust channel corresponding with the next processing gas, it
Afterwards, only it is vented from exhaust channel corresponding with the next processing gas.
9. a kind of film build method, it is in the method for film as defined in formation that is processed on substrate, institute in batch-type film formation device
Stating film formation device includes：Multiple process chambers that processed substrate is stored one by one；The multiple process chamber is alternately supplied respectively
To the first processing gas and the gas feed unit of second processing gas；With the exhaust list that the multiple process chamber is exhausted
Member, the film build method are characterised by：
Used as the exhaust unit with corresponding 2 with first processing gas and the second processing gas respectively
The exhaust unit of exhaust channel,
When supplying first processing gas and the second processing gas from the gas feed unit to the process chamber,
A kind of processing gas is supplied to chambers successively in a manner of with the time difference,
And when being exhausted using the exhaust unit, switching exhaust channel causes via with being supplied to chambers
Exhaust channel corresponding to processing gas is vented,
At least after first processing gas has been supplied and to supply before the second processing gas and having supplied
Before stating after second processing gas and supplying first processing gas, supply for being purged in the process chamber
Purge gas, switch exhaust channel during purge gas is supplied,
Switch the exhaust channel so that only from exhaust channel corresponding with first processing gas exhaust after, via with
Both exhaust channel corresponding to first processing gas and exhaust channel corresponding with the second processing gas are vented, it
Afterwards, only it is vented from exhaust channel corresponding with the second processing gas.
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| JP2014128469A JP6363408B2 (en) | 2014-06-23 | 2014-06-23 | Film forming apparatus and film forming method |
| JP2014-128469 | 2014-06-23 |
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| EP3421638A1 (en) * | 2017-06-28 | 2019-01-02 | Meyer Burger (Germany) GmbH | Device for high temperature cvd with a stacking assembly made from gas distributors and support plates |
| JP6916766B2 (en) | 2018-08-27 | 2021-08-11 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | Manufacturing method of substrate processing equipment and semiconductor equipment |
| KR101971827B1 (en) * | 2018-04-17 | 2019-04-23 | 캐논 톡키 가부시키가이샤 | Vacuum apparatus, vacuum system, device manufacturing apparatus, device manufacturing system and device manufacturing method |
| JP6896682B2 (en) * | 2018-09-04 | 2021-06-30 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | Manufacturing method of substrate processing equipment and semiconductor equipment |
| EP3760766B1 (en) * | 2019-07-03 | 2022-03-09 | SiCrystal GmbH | System for efficient manufacturing of a plurality of high-quality semiconductor single crystals, and method of manufacturing same |
| KR20210152123A (en) * | 2020-06-08 | 2021-12-15 | 주성엔지니어링(주) | Method for Processing Substrate |
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| CN105316654A (en) | 2016-02-10 |
| KR20160001653A (en) | 2016-01-06 |
| TW201610217A (en) | 2016-03-16 |
| KR101787825B1 (en) | 2017-11-15 |
| JP6363408B2 (en) | 2018-07-25 |
| TWI676701B (en) | 2019-11-11 |
| JP2016009724A (en) | 2016-01-18 |
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