CN102644062A - On-line atomic layer deposition device and deposition method - Google Patents
On-line atomic layer deposition device and deposition method Download PDFInfo
- Publication number
- CN102644062A CN102644062A CN2012100913523A CN201210091352A CN102644062A CN 102644062 A CN102644062 A CN 102644062A CN 2012100913523 A CN2012100913523 A CN 2012100913523A CN 201210091352 A CN201210091352 A CN 201210091352A CN 102644062 A CN102644062 A CN 102644062A
- Authority
- CN
- China
- Prior art keywords
- substrate
- chamber
- atomic layer
- layer deposition
- feed system
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses an on-line atomic layer deposition device, which comprises a substrate feeding system, a processing chamber, a precursor feeding system, at least one loading and unloading element, a lifting element, a control and detection system and an exhaust system, wherein a substrate is fed into the processing chamber by the substrate feeding system; the precursor feeding system is arranged on the side face of the processing chamber; the loading and unloading element is arranged at the inlet and outlet position of the processing chamber; the lifting element is arranged just below the processing chamber and is in contact with a substrate carrying device through an open groove on the processing chamber; and the control and detection system and the exhaust system are connected with the processing chamber respectively. According to the on-line atomic layer deposition device, the problem of the complex loading element and substrate carrying device can be solved, and atomic layer deposition on the surface of a substrate can be realized in a batch processing mode.
Description
Technical field
The present invention relates to a kind of apparatus for atomic layer deposition, particularly a kind of online apparatus for atomic layer deposition and deposition method.
Background technology
The method that apparatus for atomic layer deposition carries out the ALD reaction is: at a certain temperature, first kind of pre-reaction material of feeding is adsorbed on precursor molecules and forms promoting agent on the substrate surface in reaction chamber; When the absorption of precursor reaches capacity state, remove first kind of precursor and by product in the reaction chamber; Feed second kind of pre-reaction material, second kind of precursor and the promoting agent that has been adsorbed on substrate surface i.e. first kind of precursor generation chemical reaction, substrate surface generate the film that will prepare unimolecular layer and discharge the gasiform by product; Remove second kind of precursor and by product in the reaction chamber.And the like, alternately inject reaction chamber through two or more gaseous state precursor, form at processed substrate surface and replace saturated surface reaction, thereby realize ald.The film that can prepare different thickness through the growth cycle of selecting different numbers.
General batch processing apparatus for atomic layer deposition, the reaction prebasal plate is loaded and unloaded element and is loaded into substrate bearing device.This substrate bearing device is loaded in several low pressure or the synthesis under normal pressure chamber by mechanical manipulator or other allied equipments.Substrate in the differential responses chamber will be synchronized ground, sequentially or continuously apply the gas precursor.When a collection of substrate is added man-hour simultaneously in one or more reaction chambers, a collection of substrate in another reaction chamber is loaded into or unloads out reaction chamber.The substrate loading and unloading element and the substrate bearing device that in said apparatus, need relative complex are for the continuous loading and the charging of substrate brought inconvenience.
Summary of the invention
The technical problem that (one) will solve
The technical problem that the present invention will solve is how a kind of apparatus for atomic layer deposition and deposition method are provided, and is used to solve loading member and substrate bearing device complicated problems, and can realize the ald of substrate surface with batch fashion.
(2) technical scheme
For realizing above-mentioned purpose, the technical scheme that the present invention adopts is following:
The present invention provides a kind of online apparatus for atomic layer deposition; Comprise substrate feed system, process cavity, precursor feed system, at least one loading and unloading element, lift elements, control and detection system and exhaust system; Wherein said substrate feed system is sent into substrate in the said process cavity; Said precursor feed system is arranged on the side of process cavity, and said loading and unloading element is arranged at the import and export position of process cavity, said lift elements be arranged on said process cavity under; Contact with substrate bearing device through the fluting on the process cavity, said control is connected with process cavity respectively with exhaust system with detection system.
Better, said process cavity comprises: preheating chamber, at least one reaction chamber and cooling chamber; Said preheating chamber, said reaction chamber and said cooling chamber are connected in regular turn.
Better; Said preheating chamber, reaction chamber and cooling chamber all comprise one and the isolating loam cake of chamber body; This loam cake adopts bolt to be connected with preheating chamber body, reaction chamber body with the cooling chamber body respectively; Cover on said and offer the gaseous diffusion mouth, and be provided with fluting in the middle of the said loam cake, be used to place heating unit.
Better, said substrate feed system comprises the travelling belt that has groove, and belt drive mechanisms and subsidiary thereof are in order to the mounting substrate bogey and it is moved with travelling belt.
Better; Said loading and unloading element comprises an automatic control system, at least one moving meter and at least one substrate bearing device; Have on the said plate bogey and supply to place the groove that substrate is used; Make substrate on substrate bearing device, be matrix form and arrange, in order to hold one and more than one substrate.
Better, said precursor feed system comprises at least one precursor source container and rinsing gas source container.
Better, said online apparatus for atomic layer deposition also comprises: heating system, said heating system comprises at least one heating unit.
Better, control and detection system are loaded and unloaded the action of element, substrate feed system, precursor feed system and heating system in order to control, and detect the ALD response behaviour of substrate in real time.
The present invention also provides a kind of and uses above-mentioned any described deposition apparatus of claim to carry out the deposition method of online atomic shell, and said method comprises step:
Pre-heating step: said substrate is made a gift to someone in the preheating chamber through said substrate feed system, is that medium carries out preheating to said substrate with the warm air;
Reactions step: alternately feed different precursors and rinsing gas to said reaction chamber inter-sync ground, carry out the ALD reaction at said substrate surface
Cooling step: said substrate is sent in the cooling chamber, fed rare gas element with said substrate cool to room temperature.
Better, in reactions step, said substrate carries out repeatedly the ALD reaction in tactic at least one reaction chamber.
(3) beneficial effect
Avoid the use of baroque substrate bearing device and loading and unloading element; The intermittent charging of pulsed makes that substrate loading and unloading component structure is simple, and makes that the substrate cargo handling process is easier to realize; Simultaneously, the shared cover substrate feed system of several tactic ald reaction chambers, precursor feed system, loading and unloading element and control and detection system can reduce the configuration in the device; Each substrate is matrix on substrate bearing device arranges, and can in a plurality of reaction chambers, process different substrates simultaneously; Substrate bearing device is loaded into the substrate feed system by the loading and unloading element, and sends into each chamber by the substrate feed system, in each chamber; Promote the position of substrate bearing device by lift elements; And and cavity top cover between form the confined reaction chamber, this makes that the practical application space of preheating, reaction and cooling chamber is narrow and small, and narrow and small preheating and cooling space can shorten preheating and cool off the needed time; Narrow and small reaction compartment structure can increase the homogeneity that gas injects; Improve the processing quality of substrate, can also shorten flush time, improve the production efficiency of substrate.
Description of drawings
Fig. 1 is the layout synoptic diagram of each chamber of the online apparatus for atomic layer deposition of the present invention;
Fig. 2 is the synoptic diagram of the online apparatus for atomic layer deposition of the present invention;
Fig. 3 is the ground configuration synoptic diagram of the online apparatus for atomic layer deposition of the present invention;
Fig. 4 is the structural representation of the online apparatus for atomic layer deposition reaction chamber of the present invention;
Fig. 5 is the synoptic diagram of the confined reaction indoor gas flow direction of each cavity top cover of the online apparatus for atomic layer deposition of the present invention and substrate bearing device formation;
Fig. 6 moves towards synoptic diagram for the gas circuit of apparatus of the present invention.
Embodiment
Below in conjunction with accompanying drawing and embodiment, specific embodiments of the invention describes in further detail.Following examples are used to explain the present invention, but are not used for limiting scope of the present invention.
Shown in Fig. 1-5, a kind of online apparatus for atomic layer deposition comprises substrate feed system 1, process cavity 456, precursor feed system 13, at least one loading and unloading element 7, lift elements 19, control and detection system 12, exhaust system 9,11.
Wherein said process cavity 456 comprises: preheating chamber 4, at least one reaction chamber 5 and cooling chamber 6, said preheating chamber 4, said reaction chamber 5 are connected with said cooling chamber 6 in regular turn.Said preheating chamber 4 is used for being heated to ALD and reacting needed temperature being carried on substrate 3 on the substrate bearing device 2.Said reaction chamber 5 is used to realize the ALD reaction, makes the overlay film of substrate 3 reach needed thickness; In addition, said down 5 ones of reaction chambers have fluting, be used to make lift elements 19 to pass chamber body the position of substrate bearing device 2 is promoted.Said cooling chamber 6 is used for substrate 3 cool to room temperature of accomplishing whole ALD reactions.
Said substrate feed system 1 is used for the substrate bearing device that has carried substrate 32 orders are sent into preheating chamber 4, each reaction chamber 5 and cooling chamber 6; In addition, this substrate feed system 1 comprises the travelling belt that has groove, and belt drive mechanisms and subsidiary thereof are in order to mounting substrate bogey 2 and it is moved with travelling belt.
Said precursor feed system 13 is arranged on process cavity 456 sides, and it comprises one or more precursor source container and rinsing gas source container, like gas container, bubbler etc., and adopts catheter guidance gas precursor to get into reaction chamber 5.Precursor can gas in the precursor source container, the form of liquid or solid exists, but finally be injected into reaction chamber 5 with the form of gas.The precursor source container of said precursor feed system 13, rinsing gas source container and extraction element can be common to part or all of reaction chamber 5.Specifically: said precursor feed system 13 is synchronously alternately injected different pre-reaction materials and rinsing gas with the mode of precursor1 → purge → precursor2 → purge to each different reaction chamber 5, to realize substrate 3 the ALD reaction takes place synchronously in each reaction chamber 5.Simultaneously, the suction element of said precursor feed system 13 extracts pre-reaction material gas and rinsing gas remaining in the reaction chamber 5 from reaction chamber 5, enter exhaust system 9,11.After the obnoxious flavour that said exhaust system 9,11 is discharged is handled through said exhaust treatment system, become pollution-free gas, and can directly enter atmosphere.
Said loading and unloading element 7; Comprise an automatic control system, at least one moving meter and at least one substrate bearing device 2; This loading and unloading element 7 is used for moving substrate 3 and on substrate bearing device 2, loads and unloads; And be used for moving substrate bogey 2 in 1 loading and unloading of substrate feed system, and said loading and unloading element 7 is arranged at the position of process cavity 456 import and exports, and particular location is: before the preheating chamber 4 and after the cooling chamber 6.。Have the groove that supplies to place substrate 3 usefulness on the said plate bogey 2, make substrate 3 on substrate bearing device 2, be matrix form and arrange, in order to hold one and more than one substrate 3.
Said lift elements 19 be arranged on said process cavity 456 under, contact with substrate bearing device 2 through the fluting on the process cavity 456, be used to promote the position of substrate bearing device 2.
Said control is connected with process cavity 456 respectively with exhaust system 9,11 with detection system 12.
Said preheating chamber 4, reaction chamber 5 and cooling chamber 6 all comprise one with the isolating loam cake 18 of chamber body, two-way gas precursor inlet mouth 17, a road gives vent to anger 16.Said loam cake 18 adopts bolt to be connected with preheating chamber 4 bodies, reaction chamber 5 bodies with cooling chamber 6 bodies respectively, and can with the substrate bearing device 2 formation enclosed spaces that are raised after element 19 raised position, become the part of reaction chamber.Said two-way precursor inlet mouth 17 and air outlet 16 lay respectively at the right ends of reaction chamber 5 end faces.Have the gaseous diffusion mouth on the said loam cake 18, and be provided with fluting in the middle of the said loam cake 18, be used to place heating unit.Said online apparatus for atomic layer deposition also comprises: heating system, said heating system comprises at least one heating unit, in order to the temperature of the substrate 3 in the heating preheating chamber 4 to reaction needed, and in each reaction chamber 5, keeps the temperature of substrate 3 in reaction needed.Preheating chamber 4 comprises isolating heating unit with each reaction chamber 5, i.e. each self-contained independently heating unit, each independently heating unit form the part of heating system jointly.
Said control and detection system 12 are loaded and unloaded the action of element 7, substrate feed system 1, precursor feed system 13 and heating system in order to control, and detect the ALD response behaviour of substrate 3 in real time.
As shown in Figure 6, the gas circuit trend of apparatus of the present invention is:
Pre-heating stage: flow through behind nitrogen process manual valve and the strainer GF MFC02, pneumavalve v5, nitrogen heater GH, get into preheating chamber 4, be drawn out of preheating chamber 4 after the completion preheating.
Colling stages: the MFC01 that flows through behind nitrogen process manual valve and the strainer GF, pneumavalve v2 get into cooling chamber 6, realize being drawn out of cooling chamber 6 after the cooling.
Technological process: (1) feeds first kind of precursor: the MFC03 that flows through behind nitrogen process manual valve and the strainer GF, pneumavalve v11 get into the source container of first kind of precursor; In nitrogen, carry first kind of precursor; Flow through then pneumavalve v12, v13 gets into reaction chamber 5, is drawn out of reaction chamber 5 then.
(2) first kind of precursor of flushing: the MFC05 that flows through behind nitrogen process manual valve and the strainer GF, pneumavalve v10 get into reaction chamber 5, are drawn out of reaction chamber 5 then.
(3) feed second kind of precursor: the MFC04 that flows through behind nitrogen process manual valve and the strainer GF, pneumavalve v7 get into the source container of second kind of precursor; In nitrogen, carry second kind of precursor; Flow through then pneumavalve v8, v9 gets into reaction chamber 5, is drawn out of reaction chamber 5 then.
(4) second kind of precursor of flushing: the MFC05 that flows through behind nitrogen process manual valve and the strainer GF, pneumavalve v10 get into reaction chamber 5, are drawn out of reaction chamber 5 then.
When not needing preheating, can discharge system via pneumavalve v6 and v4 by-passing behind flow through behind nitrogen process manual valve and the strainer GF MFC02, pneumavalve v5, the nitrogen heater GH; In the time need not cooling off, can discharge system via pneumavalve v3 and v4 by-passing behind flow through behind nitrogen process manual valve and the strainer GF MFC01, the pneumavalve v2; In the time need not washing precursor, flow through behind nitrogen process manual valve and the strainer GF MFC05, pneumavalve v10, v15 and v17 by-passing are discharged system.
Principle of work: substrate 3 to be processed is loaded into substrate bearing device 2 by said loading and unloading element 7; And further be loaded into said substrate feed system 1; Send into said preheating chamber 4 by said substrate feed system 1; In preheating chamber 4, said heating system receives said control and detection system 12 controls, substrate 3 is heated to the temperature of reaction needed.In each reaction chamber 5, heating system receives said control and detection system 12 controls, keeps the temperature of substrate 3 in reaction needed.Said substrate feed system 1 continues the substrate after the preheating 3 is sent into tactic first reaction chamber 5, in this first reaction chamber 5, carries out the ALD reaction first time; Wherein, lift elements 19 has twice action in an ALD reaction.When said substrate feed system was delivered to substrate bearing device 2 in each chamber correspondence position, said lift elements 19 actions promoted the position of substrate bearing device 2, make the substrate bearing device 2 and the loam cake 18 of chamber form airtight reaction chamber.Said precursor feed system 13 is alternately sent into different pre-reaction material gas and rinsing gas to this airtight reaction chamber 5.Said exhaust system 9,11 is discharged from this reaction chamber 5 and is participated in reactant gases, rinsing gas and by product.In this reaction chamber 5, after substrate 3 was accomplished the ALD reaction that comprises several ALD cycle, said lift elements 19 was moved once more, reduces substrate bearing device 2, makes substrate bearing device 2 be reloaded into said substrate feed system 1.Said substrate feed system 1 is sent this substrate bearing device 2 into next chamber.
Reaction is sent substrate 3 into tactic second reaction chamber 5 by said substrate feed system 1 after accomplishing once more, carries out the ALD reaction second time.The rest may be inferred, accomplishes each time ALD reaction until this substrate 3 through all tactic reaction chambers 5, and coverlay film thickness reaches necessary requirement.By said substrate feed system 1 substrate that machines 3 is sent into 6 coolings of said cooling chamber, and the substrate 3 that will cool off after accomplishing is seen off.Said loading and unloading element 7 unloads cooled substrate bearing device 2 from said substrate feed system 1, and unloads carried base board 3 further.When first substrate bearing device 2 was admitted to first reaction chamber 5, second substrate bearing device 2 was admitted to said preheating chamber 4 preheatings.Substrate 3 on first substrate bearing device 2 is accomplished the ALD reaction in first reaction chamber 5 after, first substrate bearing device 2 is admitted to second reaction chamber 5 and carries out the ALD reaction.Simultaneously, the substrate 3 on second substrate bearing device 2 is accomplished preheatings, and second substrate bearing device 2 is admitted to first reaction chamber 5 and carries out the ALD reaction.The rest may be inferred; When first substrate bearing device 2 orders have been passed through all n reaction chamber 5; Above substrate 3 accomplished whole ALD reaction, when coverlay film thickness reached necessary requirement, the substrate 3 after will being machined by said substrate feed system 1 was sent into 6 coolings of said cooling chamber.At this moment; Second, the 3rd, the 4th ..., n, a n+1 substrate bearing device 2 by said substrate feed system 1 send into according to this n, n-1, n-2 individual ..., second, first reaction chamber 5, the n+2 substrate bearing device 2 send into preheating chamber 4 by substrate feed system 1.Usually; Substrate 3 on N substrate bearing device 2 has been accomplished whole ALD reactions; When the substrate 3 after will being machined by said substrate feed system 1 is sent into 6 coolings of said cooling chamber; N+1, N+2, N+3 ... N+n-1, a N+n substrate bearing device 2 by said substrate feed system 1 send into according to this n, n-1, n-2 individual ..., second, first reaction chamber 5, the N+n+1 substrate bearing device 2 send into preheating chamber 4 by substrate feed system 1.
In addition, when being applied to normal pressure ALD reaction, said exhaust system 9,11 can adopt common exhaust fan, perhaps only adopts the rare gas element flushing, does not adopt exhaust system 9,11.When being applied to low pressure ALD reaction, said exhaust system can comprise vacuum unit, and said vacuum unit comprises vacuum pump 9, vacuum valve, vacuum-lines 11 etc., is used to reaction chamber low pressure environment is provided.
Said exhaust treatment system adopts activated carbon adsorption when purifying a small amount of obnoxious flavour, when purifying a large amount of obnoxious flavour, can adopt absorption method, immersion method, salt bath method or additive method.Concrete grammar is decided according to the character of used chemicals.
Shown in Fig. 1～5, this invention is applied to the photovoltaic field, under low pressure for being of a size of 156 * 156mm
2Solar panels substrate deposition thickness be the aluminium sesquioxide passivation film of 15nm.This device comprises the tactic ALD reaction chamber of a preheating chamber 4, five 5, cooling chamber 6, a cover substrate feed system 1, precursor feed system 13, heating system, loading and unloading element 7, lift elements 19, control and detection system 12, vacuum pump 9, vacuum pipe 11, regulator cubicle 8 and exhaust treatment system.In Fig. 1, five reaction chambers series arrangement between preheating chamber and cooling chamber.Pre-reaction material is selected TMA and H for use
2O or O
3Rinsing gas is N
2
When base plate carrying system 2 formed the confined reaction chamber with each cavity top cover, vacuum pump 9 vacuumized through 11 pairs of these confined reaction chambers of vacuum pipe, and low pressure environment is provided, and increased the homogeneity of gaseous diffusion, simultaneously with TMA residual in the reaction chamber 5, H
2O or O
3And N
2Through vacuum pipe 11 suction exhaust system.Exhaust system is discharged gas in exhaust treatment system, adopts immersion method to remove pollutent TMA wherein, directly enters atmosphere then.
A kind of apparatus for atomic layer deposition, itself and embodiment 1 difference are, do not comprise vacuum pump 9 and vacuum pipe 11, and blower fan is installed, and base plate carrying system 2 is formed the confined reaction chamber with each cavity top cover 18 bleed.It is 156 * 156mm that this device is used for adopting the ALD method under the normal pressure
2The aluminium sesquioxide passivation film of solar panels substrate deposit 15nm.
Above embodiment only is used to explain the present invention; And be not limitation of the present invention; The those of ordinary skill in relevant technologies field under the situation that does not break away from the spirit and scope of the present invention, can also be made various variations and modification; Therefore all technical schemes that are equal to also belong to category of the present invention, and scope of patent protection of the present invention should be defined by the claims.
Claims (10)
1. online apparatus for atomic layer deposition; It is characterized in that; Comprise substrate feed system, process cavity, precursor feed system, at least one loading and unloading element, lift elements, control and detection system and exhaust system, wherein said substrate feed system is sent into substrate in the said process cavity, and said precursor feed system is arranged on the side of process cavity; Said loading and unloading element is arranged at the import and export position of process cavity; Said lift elements be arranged on said process cavity under, contact with substrate bearing device through the fluting on the process cavity, said control is connected with process cavity respectively with exhaust system with detection system.
2. online apparatus for atomic layer deposition as claimed in claim 1 is characterized in that, said process cavity comprises: preheating chamber, at least one reaction chamber and cooling chamber; Said preheating chamber, said reaction chamber and said cooling chamber are connected in regular turn.
3. online apparatus for atomic layer deposition as claimed in claim 2; It is characterized in that; Said preheating chamber, reaction chamber and cooling chamber all comprise one with the isolating loam cake of chamber body, this loam cake adopts bolt to be connected with preheating chamber body, reaction chamber body with the cooling chamber body respectively, covers on said and offers the gaseous diffusion mouth; And be provided with fluting in the middle of the said loam cake, be used to place heating unit.
4. online apparatus for atomic layer deposition as claimed in claim 1 is characterized in that, said substrate feed system comprises the travelling belt that has groove, and belt drive mechanisms and subsidiary thereof are in order to the mounting substrate bogey and it is moved with travelling belt.
5. online apparatus for atomic layer deposition as claimed in claim 1; It is characterized in that; Said loading and unloading element comprises an automatic control system, at least one moving meter and at least one substrate bearing device; Have the groove that supplies the placement substrate to use on the said plate bogey, make substrate on substrate bearing device, be matrix form and arrange, in order to hold one and more than one substrate.
6. online apparatus for atomic layer deposition as claimed in claim 1 is characterized in that, said precursor feed system comprises at least one precursor source container and rinsing gas source container.
7. like any described online apparatus for atomic layer deposition of claim 1-6, it is characterized in that said online apparatus for atomic layer deposition also comprises: heating system, said heating system comprises at least one heating unit.
8. online apparatus for atomic layer deposition as claimed in claim 7 is characterized in that, control and detection system are loaded and unloaded the action of element, substrate feed system, precursor feed system and heating system in order to control, and detects the ALD response behaviour of substrate in real time.
9. deposition method that uses above-mentioned any described deposition apparatus of claim to carry out online atomic shell is characterized in that said method comprises step:
Pre-heating step: said substrate is made a gift to someone in the preheating chamber through said substrate feed system, is that medium carries out preheating to said substrate with the warm air;
Reactions step: alternately feed different precursors and rinsing gas to said reaction chamber inter-sync ground, carry out the ALD reaction at said substrate surface
Cooling step: said substrate is sent in the cooling chamber, fed rare gas element with said substrate cool to room temperature.
10. the deposition method of online atomic shell as claimed in claim 9 is characterized in that, in reactions step, said substrate carries out repeatedly the ALD reaction in tactic at least one reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100913523A CN102644062A (en) | 2012-03-30 | 2012-03-30 | On-line atomic layer deposition device and deposition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100913523A CN102644062A (en) | 2012-03-30 | 2012-03-30 | On-line atomic layer deposition device and deposition method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102644062A true CN102644062A (en) | 2012-08-22 |
Family
ID=46657134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100913523A Pending CN102644062A (en) | 2012-03-30 | 2012-03-30 | On-line atomic layer deposition device and deposition method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102644062A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105473761A (en) * | 2014-07-16 | 2016-04-06 | 成均馆大学校产学协力团 | Thin film deposition apparatus and method |
| CN109695026A (en) * | 2018-12-29 | 2019-04-30 | 无锡松煜科技有限公司 | A kind of apparatus for atomic layer deposition |
| WO2023178950A1 (en) * | 2022-03-25 | 2023-09-28 | 厦门韫茂科技有限公司 | Material moving structure of continuous ald coating device |
| CN118073167A (en) * | 2024-04-19 | 2024-05-24 | 南京原磊纳米材料有限公司 | Multi-disc type anti-coiling automatic cavity taking and placing mechanism |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101736317A (en) * | 2008-11-05 | 2010-06-16 | 财团法人工业技术研究院 | Atomic layer deposition equipment |
| CN102308362A (en) * | 2009-02-09 | 2012-01-04 | Asm美国公司 | Method and apparatus for minimizing contamination in semiconductor processing chamber |
-
2012
- 2012-03-30 CN CN2012100913523A patent/CN102644062A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101736317A (en) * | 2008-11-05 | 2010-06-16 | 财团法人工业技术研究院 | Atomic layer deposition equipment |
| CN102308362A (en) * | 2009-02-09 | 2012-01-04 | Asm美国公司 | Method and apparatus for minimizing contamination in semiconductor processing chamber |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105473761A (en) * | 2014-07-16 | 2016-04-06 | 成均馆大学校产学协力团 | Thin film deposition apparatus and method |
| CN105473761B (en) * | 2014-07-16 | 2018-02-02 | 成均馆大学校产学协力团 | Apparatus and method for thin film deposition |
| CN109695026A (en) * | 2018-12-29 | 2019-04-30 | 无锡松煜科技有限公司 | A kind of apparatus for atomic layer deposition |
| WO2023178950A1 (en) * | 2022-03-25 | 2023-09-28 | 厦门韫茂科技有限公司 | Material moving structure of continuous ald coating device |
| CN118073167A (en) * | 2024-04-19 | 2024-05-24 | 南京原磊纳米材料有限公司 | Multi-disc type anti-coiling automatic cavity taking and placing mechanism |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| RU2600047C2 (en) | Method and device for deposition of atomic layers | |
| CN102017096B (en) | Film forming device | |
| KR102197576B1 (en) | Apparatus for spatial atomic layer deposition with recirculation and methods of use | |
| JP4523661B1 (en) | Atomic layer deposition apparatus and thin film forming method | |
| CN105925960B (en) | A kind of atomic layer deposition vacuum coater for solar battery sheet production | |
| CN107699869A (en) | Suppress interfacial reaction by changing chip temperature in whole deposition process | |
| CN109689930B (en) | Apparatus and method for atomic layer deposition | |
| JP2012104720A5 (en) | ||
| JP5088284B2 (en) | Vacuum processing equipment | |
| KR101787825B1 (en) | Film forming apparatus and film forming method | |
| CN102644062A (en) | On-line atomic layer deposition device and deposition method | |
| CN108149224A (en) | A kind of plasma-assisted atomic layer deposition apparatus | |
| JP2012099594A (en) | Substrate processing apparatus | |
| CN102803558B (en) | Atomic layer deposition apparatus | |
| CN106661731A (en) | Nozzle head, apparatus and method for subjecting surface of substrate to successive surface reactions | |
| JP2011238832A (en) | Substrate processing apparatus | |
| CN102644063A (en) | Equipment for realizing atomic layer deposition process | |
| CN202610317U (en) | Online atomic layer depositing device | |
| CN202610319U (en) | Equipment for implementing atomic layer deposition process | |
| CN212770954U (en) | Preheating type tubular PECVD equipment | |
| CN107949655A (en) | Method for handling the equipment of substrate surface and operating the equipment | |
| JP2011202270A (en) | Vacuum processing apparatus and vacuum processing method | |
| CN212673823U (en) | Continuous vacuum heating equipment | |
| CN210223943U (en) | Horizontal plasma continuous processing system | |
| CN103438710B (en) | Substrate processing system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120822 |