WO2014091886A1

WO2014091886A1 - Substrate processing apparatus and method for adjusting pressure inside processing vessel

Info

Publication number: WO2014091886A1
Application number: PCT/JP2013/081108
Authority: WO
Inventors: 末木　英人; 久松井; 昌平仙波; 博章内田
Original assignee: 東京エレクトロン株式会社
Priority date: 2012-12-11
Filing date: 2013-11-19
Publication date: 2014-06-19
Also published as: TW201439362A; JP2014116484A

Abstract

A substrate processing apparatus (100), which performs processing on substrates using a processing gas that generates a deposition substance, is equipped with: a processing vessel (1) that accommodates substrates; a processing gas supply mechanism (2) that supplies processing gas to the processing vessel; an exhaust passage (3), one end of which is connected to the processing vessel (1); an exhaust pump (4) that is connected to the other end of the exhaust passage (3), and evacuates the inside of the processing vessel (1); a thermal decomposition machine (5) that is disposed in the exhaust passage (3), and thermally decomposes unreacted processing gas discharged from the processing vessel (1); and baffle plates (6) that are disposed inside the thermal decomposition machine, and adjust the exhaust conductance of the exhaust passage (3) in order to adjust the pressure inside the processing vessel (1).

Description

Substrate processing apparatus and pressure adjusting method in processing container

The present invention relates to a substrate processing apparatus and a pressure adjusting method in a processing container.

In the manufacturing process of flat panel displays (FPD) such as liquid crystal display devices (LCD) and the manufacturing process of semiconductor devices, CVD (Chemical Vapor Deposition) method or ALD (Atomic Layer Deposition) is applied to substrates such as glass substrates and semiconductor wafers. A film forming process for forming a predetermined film using a method is performed. In such a film forming process, a film is formed on the substrate using a processing gas such as an organic metal (MO) gas or a silane-based gas, and the unreacted gas after the film forming is a heating device provided in the exhaust gas pipe. It is discharged after it is pyrolyzed and rendered harmless.

In a film forming apparatus that performs such a film forming process, pressure adjustment in the processing chamber is conventionally performed by changing the exhaust conductance with a valve or the like provided in the exhaust pipe (for example, Patent Document 1).

Japanese Patent Laid-Open No. 02-198137

However, in the film formation process, deposits (depots) are likely to be formed in the processing vessel or piping due to unreacted processing gas and sometimes reaction products, and the pressure conductance in the processing chamber is changed by a valve or the like. If this is done, deposits (depots) adhere to a valve or the like with reduced conductance, causing a problem in processing. For this reason, the maintenance cycle for removing this is shortened. In the case of maintenance, in many cases, the inside of piping, valves, and the like is opened to the atmosphere, but there are many dangerous processing gases used for the film forming process, and it is desirable to reduce maintenance opportunities as much as possible. It is also desirable to reduce maintenance opportunities from the viewpoint of the operating rate of the processing apparatus.

Therefore, the present invention provides a substrate processing apparatus and a processing container capable of adjusting the pressure in the processing container without being affected by the adhesion of the deposit in the substrate processing using the processing gas for generating the deposit such as a film forming process. It is an object to provide an internal pressure adjusting method.

That is, according to the first aspect of the present invention, there is provided a substrate processing apparatus that performs processing on a substrate using a processing gas that generates a deposit, the processing container containing a substrate, and the processing gas being transferred to the processing container. A processing gas supply mechanism for supplying gas to the processing vessel, an exhaust passage having one end connected to the processing vessel, an exhaust pump for exhausting the inside of the processing vessel connected to the other end of the exhaust passage, and an exhaust passage A pyrolyzer for thermally decomposing the thermally decomposable sedimentary gas in the exhaust gas discharged from the processing container, and a pressure in the processing container provided in the pyrolyzer are adjusted. Therefore, there is provided a substrate processing apparatus comprising exhaust conductance adjusting means for adjusting exhaust conductance of the exhaust passage.

In the first aspect, the exhaust conductance adjusting means is preferably provided in a heating region in the pyrolyzer.

The exhaust conductance adjusting means may be disposed in an exhaust passage in the pyrolyzer and have one or a plurality of baffle plates that define an exhaust gas passage region. In this case, the exhaust conductance can be adjusted by at least one of the position, size and shape of the exhaust gas passage region by the baffle plate, the number of baffle plates and the arrangement position.

The exhaust conductance adjusting means may be configured such that the exhaust conductance is variable. In this case, the exhaust conductance adjusting means has one or a plurality of baffle plates that are disposed in the exhaust passage in the pyrolyzer and that defines an exhaust gas passage region, and the position and size of the exhaust gas passage region by the baffle plate. Further, at least one of the shape, the number of the baffle plates, and the arrangement position may be variable.

In the exhaust passage, it is preferable that a member for adjusting the exhaust conductance does not exist between the processing vessel and the pyrolyzer.

The processing container may contain a plurality of substrates and be capable of processing the plurality of substrates collectively. In addition, the treatment can be a film formation treatment by a CVD method or an ALD method. Further, examples of the depositable gas that can be thermally decomposed include an unreacted processing gas.

According to a second aspect of the present invention, a processing container that accommodates a substrate, a processing gas supply mechanism that supplies a processing gas that generates deposits to the processing container, and an exhaust passage that has one end connected to the processing container. And an exhaust pump for exhausting the inside of the processing vessel connected to the other end of the exhaust passage, and a deposition property capable of being thermally decomposed in the exhaust gas exhausted from the processing vessel provided in the exhaust passage. In a substrate processing apparatus comprising a pyrolyzer for thermally decomposing a gas, a pressure in the processing container for adjusting the pressure of the processing container, the exhaust conductance being adjusted in the pyrolyzer, There is provided a method for adjusting the pressure in a processing container, characterized by adjusting the pressure in the processing container.

In the second aspect, the adjustment of the exhaust conductance in the pyrolyzer can be performed by one or a plurality of baffle plates arranged in an exhaust passage in the pyrolyzer and defining an exhaust gas passage region. In this case, the exhaust conductance can be adjusted by at least one of the position, size and shape of the exhaust gas passage region by the baffle plate, the number of baffle plates and the arrangement position. An example of the thermally decomposable deposition gas is an unreacted processing gas.

According to the present invention, the exhaust conductance adjusting means for adjusting the exhaust conductance of the exhaust passage in order to adjust the pressure in the processing vessel is used for thermally decomposing a depositable gas such as an unreacted process gas. Since it is provided in the pyrolyzer, the deposit is essentially not attached to the exhaust conductance adjusting means. For this reason, the defect of the process by depositing does not arise, and the period of a maintenance can be lengthened.

It is sectional drawing which shows the substrate processing apparatus which concerns on one Embodiment of this invention. It is a cross-sectional view of the pyrolyzer used for the substrate processing apparatus which concerns on one Embodiment of this invention. It is a figure which shows an example of the baffle board used as an exhaust conductance adjustment means. It is a figure which shows the other example of the baffle board used as an exhaust conductance adjustment means. It is a figure which shows an example of the baffle plate which made exhaust conductance variable. It is a figure which shows the other example of the baffle board which made exhaust conductance variable. It is a figure which shows the further another example of the baffle plate which made exhaust conductance variable. It is a figure for demonstrating the adjustment example of the exhaust conductance in the conventional substrate processing apparatus.

Embodiments of the present invention will be described below with reference to the accompanying drawings.
FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention. In this embodiment, a batch-type film forming apparatus that performs film forming processing by an ALD method on a plurality of substrates will be described as an example of the substrate processing apparatus.

As shown in FIG. 1, the substrate processing apparatus 100 includes a processing container 1 that houses a plurality of substrates S, a processing gas supply mechanism 2 that supplies a processing gas for film formation to the processing container 1, and a processing container 1. One end is connected to the exhaust passage 3 for exhausting the exhaust gas discharged from the processing vessel 1, the vacuum pump 4 for exhausting the processing vessel 1 connected to the other end of the exhaust passage 3, and the exhaust passage 3. Furthermore, a pyrolyzer 5 for thermally decomposing unreacted process gas in the exhaust gas discharged from the processing vessel 1, a baffle plate 6 as exhaust conductance adjusting means provided in the pyrolyzer 5, and a substrate And a control unit 7 having a microprocessor (computer) for controlling each component of the processing apparatus 100. In addition, in the exhaust gas, in addition to the unreacted processing gas, if the reaction product generated in the film forming process is a gas, the reaction product is also included in this.

The processing container 1 accommodates a plurality of (four in the example of FIG. 1) substrates S and is divided into processing chambers 11 for accommodating the substrates S. Each processing chamber 11 is provided with a susceptor 12 on which a substrate S having a built-in heater is placed.

The processing gas supply mechanism 2 includes a processing gas supply source 21 and a pipe group 22 that supplies the processing gas from the processing gas supply source 21 to each processing chamber 11 of the processing container 1. The processing gas supply mechanism 2 is configured to be able to supply the first processing gas, the second processing gas, and the purge gas, and alternately supplies the first processing gas and the second processing gas with the purge gas interposed therebetween. A predetermined film is formed by ALD supplied to the processing container 1. The flow rate of each gas can be controlled by a flow rate controller (not shown) such as a mass flow controller. For example, as the first processing gas, a metal alkoxide such as tetraethoxysilane (TEOS), a metal carbonyl such as Ni (CO) ₄ , a trimethyl compound such as tetramethylaluminum (TMAl) or tetramethylgallium (TMGa), etc. An organic metal compound gas can be used, and a reactive gas such as H ₂ O, ozone, or H ₂ can be used as the second processing gas. As the purge gas, can be used, for example, Ar gas, an inert gas such as N ₂ gas. In FIG. 1, the processing gas supply system to each processing chamber 11 is illustrated as one system for simplicity. However, when the first processing gas and the second processing gas are supplied to each processing chamber 11. Since each processing gas requires a processing gas supply system, there are at least two processing gas supply systems to each processing chamber 11.

The exhaust passage 3 is provided inside an individual exhaust pipe 31 having one end connected to each processing chamber 11 of the processing container 1 and a collective exhaust pipe 32 in which the individual exhaust pipes 31 are gathered. The pyrolyzer 5 is connected in the middle of the collective exhaust pipe 32, and the exhaust passage 3 is also formed inside the pyrolyzer 5. An opening / closing valve 33 is provided on the upstream side of the pyrolyzer 5 in the collective exhaust pipe 32.

As shown in the cross-sectional views of FIGS. 1 and 2, the pyrolyzer 5 has a cylindrical main body container 51 connected to the collective exhaust pipe 32 and closed at both ends. Is provided with a cylindrical inner wall 52 that divides into a first space 51a having a central columnar shape and a second space 51b outside the first space 51a. The first space 51 a and the second space 51 b are connected by a notch 52 a at the upper end of the inner wall 52. The lower end surface of the main body container 51 is provided with a first connection portion 53a having an opening in the first space 51a, and the outer periphery of the main body container 51 has a second connection portion 53b as desired in the second space 51b. The first connection portion 53 a and the second connection portion 53 b are connected to the collective exhaust pipe 32. Therefore, the first space 51 a and the second space 51 b function as a part of the exhaust passage 3.

A heater 54 extending downward from the upper end of the main body container 51 is inserted into the first space 51a. When the heater 54 is energized, the inside of the first space 51a is heated and flows therethrough. The reaction process gas is pyrolyzed. Therefore, the inside of the first space 51a becomes a heating region. By heating the inside of the main body container 51 by the heater 54, the inside of the main body container 51 is brought to a temperature at which, for example, 300 ° C. or higher processing gas can be decomposed.

One or a plurality of (three in the example of FIG. 1) baffle plates 6 serving as exhaust conductance adjusting means are provided in the first space 51a that is the heating region of the pyrolyzer 5. The baffle plate 6 adjusts the exhaust conductance of the exhaust passage 3 in order to adjust the pressure in the processing container 1. That is, in general, in substrate processing in a processing container, when exhausting the processing container with a vacuum pump through the exhaust passage while flowing a processing gas or the like into the processing container, conductance adjustment is performed in the exhaust passage. The pressure in the processing vessel is adjusted by adjusting the conductance of the exhaust passage by installing a valve or the like. However, in this embodiment, the exhaust conductance adjustment for adjusting the pressure in the processing container 1 is performed by the baffle plate 6 provided as an exhaust conductance adjusting means in the pyrolyzer 5.

The baffle plate 6 is inserted into the exhaust passage 3 as a resistance against exhaust, and as shown in FIG. 3, for example, an exhaust gas passage region 6a is defined at the center thereof. As shown in FIG. 4, the exhaust gas passage region 6 a may be formed between the baffle plate 6 and the inner wall 52.

By providing the baffle plate 6 so as to be detachable, the conductance of the exhaust passage 3 is adjusted by adjusting at least one of the position, size, shape, number of baffle plates 6 and arrangement position of the exhaust gas passage region 6a. It becomes possible to adjust. For example, by preparing various baffle plates 6 and selecting and attaching them appropriately, the position, size, and shape of the exhaust gas passage region 6a by the baffle plate 6 can be adjusted. Further, for example, by preparing a plurality of mounting ports for the baffle plate 6 and mounting the baffle plate 6 on a part of them, the number of baffle plates 6 and the arrangement position thereof can be adjusted. . Further, the exhaust conductance can be adjusted by changing the relative position of the exhaust gas passage region 6a defined by each baffle plate 6 by changing the direction of the plurality of baffle plates 6 or the like.

It is also possible to make the exhaust conductance variable by attaching an appropriate actuator to the baffle plate 6. For example, as shown in FIG. 5, by making a plurality of baffle plates 6 movable along the longitudinal direction of the first space 51a by an actuator 61, these positions are adjusted to make the exhaust conductance variable. Can do. Further, as shown in FIG. 6, the baffle plate 6 can be moved in a direction orthogonal to the longitudinal direction of the first space 51 a by the actuator 62, so that the exhaust gas passage region 6 a formed between the baffle plate 6 and the inner wall 52 is formed. The size and position can be adjusted. Furthermore, as shown in FIG. 7, the size of the exhaust gas passage region 6a at the center of the baffle plate 6 can be made variable by making the baffle plate 6 an iris diaphragm structure and changing the opening degree by the actuator 63. Furthermore, the number of the baffle plates 6 can be made variable by allowing the baffle plates 6 to be moved into and out of the first space 51a by an actuator. Furthermore, a plurality of baffle plates 6 can be rotated by an actuator, or the relative position of the exhaust gas passage region 6a defined by each baffle plate 6 can be made variable.

Next, processing operations in the substrate processing apparatus 100 configured as described above will be described. The following processing operations are performed under the control of the control unit 7.

First, a gate valve (not shown) is opened, and a substrate S is carried into each processing chamber 11 from a loading / unloading port (not shown) by a transfer device (not shown) and placed on the susceptor 12. Next, the processing chamber 1 is hermetically sealed by closing the gate valve, and a predetermined gas is allowed to flow from the processing gas supply mechanism 2 into the processing chamber 1 and is exhausted by the vacuum pump 4 while adjusting the exhaust conductance. The inside of 1 is adjusted to a predetermined pressure. Then, the first processing gas and the second processing gas are alternately supplied from the processing gas supply mechanism 2 to the processing container 1 with the purge gas interposed therebetween, and a predetermined film is formed in each processing chamber of the processing container 1 by the ALD method. A film is formed on the substrate S in 11.

In the conventional substrate processing apparatus, as shown in FIG. 8, a pressure adjusting valve (regulator) 71 is provided in the individual exhaust pipe 31, and a pressure control valve (APC) 72 is provided in the collective exhaust pipe 32. Adjustment was performed to adjust the pressure in the processing container 1. However, since deposits (depots) are formed in the processing container, piping, etc. in the film forming process, the pressure adjustment in the processing container 1 is controlled by a pressure adjusting valve (regulator) 71 or a pressure control valve (APC) as in the conventional case. When the variable valves such as 72 are used, when these valves are throttled to reduce the conductance, deposits (depots) adhere to them, causing a flow error or a malfunction of the valve due to valve malfunction. End up. For this reason, the maintenance cycle for removing this is shortened.

Therefore, in this embodiment, a baffle plate 6 is provided in the pyrolyzer 5 as exhaust conductance adjusting means. Thereby, the exhaust conductance in the pyrolyzer 5 can be adjusted, the conductance of the whole exhaust can be reduced, and as a result, the pressure in the processing container 1 can be adjusted. For this reason, a pressure adjustment valve (regulator) and a pressure control valve are not required, and there is no inconvenience due to deposits (depots) adhering to them. Further, since the inside of the pyrolyzer 5 is heated by the heater 54 to decompose the unreacted processing gas, deposits (depots) do not adhere to the exhaust conductance adjusting means. For this reason, the malfunction of the process by deposit (depot) adhesion does not arise, and the period of a maintenance can be prolonged.

Further, by providing an actuator or the like and appropriately moving the baffle plate 6 to make the conductance variable, the pressure in the processing container 1 can be appropriately changed during the processing.

It should be noted that the present invention is not limited to the above embodiment and can be variously modified. For example, in the above embodiment, the baffle plate is provided as the exhaust conductance adjusting means, but the present invention is not limited to this. For example, the exhaust conductance may be adjusted by changing the area of the exhaust passage itself of the pyrolyzer.

Moreover, although the example which provided the baffle plate as an exhaust conductance adjustment means in the 1st space which is a heating area | region directly heated with the heater in the pyrolyzer was shown, if process gas can be decomposed | disassembled, this You may provide in the 2nd space which is not such a heating area | region. The pyrolyzer in the above embodiment is merely an example, and may have other structures such as a single pipe structure in which a heater is provided outside a pipe having an exhaust passage.

Furthermore, in the above embodiment, a batch processing apparatus that processes a plurality of substrates at the same time has been described as an example, but it is needless to say that even a single wafer type apparatus can be applied. In the above embodiment, film formation by the ALD method has been described as an example of the substrate processing. However, film formation by a normal CVD method may be used, and processing performed on the substrate using a processing gas that generates deposits. So long as the process is other than film formation.

Further, in the above embodiment, the unreacted processing gas is shown. However, the present invention is applied in the same manner when the reaction product contained in the exhaust gas is a depositable gas that can be thermally decomposed. The same is true for the embodiment of the present invention only by replacing the unreacted processing gas of this embodiment with a reaction product. Needless to say, the present invention is applied to the exhaust gas in which the unreacted processing gas and the deposition reaction product are mixed. That is, the present invention can be applied to all pyrolyzable depositing gases contained in exhaust gas.

Furthermore, the substrate of the present invention is not particularly limited due to the nature of the invention. For example, the substrate can be applied to a glass substrate or a semiconductor substrate of a flat panel display (FPD) such as a liquid crystal display (LCD), and various other types. It can be applied to other substrates.

DESCRIPTION OF SYMBOLS 1; Processing container, 2; Processing gas supply mechanism, 3; Exhaust passage, 4; Vacuum pump, 5; Pyrolysis machine, 6; Baffle plate (exhaust conductance adjustment means), 6a; 11; processing chamber, 12; susceptor, 21; processing gas supply source, 22; piping group, 31; individual exhaust pipe, 32; collective exhaust pipe, 33; open / close valve, 51; main body container, 52; 1st space, 51b; 2nd space, 54; heater, 61, 62, 63; actuator, 100; substrate processing apparatus, S; substrate

Claims

A substrate processing apparatus for processing a substrate using a processing gas for generating a deposit,
A processing container for containing a substrate;
A processing gas supply mechanism for supplying the processing gas to the processing container;
An exhaust passage having one end connected to the processing vessel;
An exhaust pump connected to the other end of the exhaust passage for exhausting the inside of the processing vessel;
A pyrolyzer provided in the exhaust passage for thermally decomposing thermally decomposable sedimentary gas in the exhaust gas discharged from the processing container;
A substrate processing apparatus comprising: an exhaust conductance adjusting means provided in the pyrolyzer for adjusting an exhaust conductance of the exhaust passage in order to adjust a pressure in the processing container.
2. The substrate processing apparatus according to claim 1, wherein the exhaust conductance adjusting means is provided in a heating region in the pyrolyzer.
The substrate processing apparatus according to claim 1, wherein the exhaust conductance adjusting means includes one or a plurality of baffle plates that are disposed in an exhaust passage in the pyrolyzer and that define an exhaust gas passage region. .
The exhaust conductance adjusting means adjusts the exhaust conductance according to at least one of a position, a size, a shape, a number of the baffle plates, and an arrangement position of an exhaust gas passage region by the baffle plate. Substrate processing equipment.
3. The substrate processing apparatus according to claim 1, wherein the exhaust conductance adjusting means has a variable exhaust conductance.
The exhaust conductance adjusting means is disposed in an exhaust passage in the pyrolyzer and has one or a plurality of baffle plates that define an exhaust gas passage region, and the position, size, shape, and the like of the exhaust gas passage region by the baffle plate, 6. The substrate processing apparatus according to claim 5, wherein at least one of the number of baffle plates and the arrangement position is variable.
3. The substrate processing apparatus according to claim 1, wherein a member for adjusting an exhaust conductance does not exist in the exhaust passage from the processing vessel to the pyrolyzer.
3. The substrate processing apparatus according to claim 1, wherein the processing container accommodates a plurality of substrates and can process the plurality of substrates collectively.
3. The substrate processing apparatus according to claim 1, wherein the process is a film forming process by a CVD method or an ALD method.
3. The substrate processing apparatus according to claim 1, wherein the thermally decomposable deposition gas is an unreacted processing gas.
A processing container for containing a substrate; a processing gas supply mechanism for supplying a processing gas for generating deposits to the processing container; an exhaust passage having one end connected to the processing container; and an other end of the exhaust passage. In addition, an exhaust pump for exhausting the inside of the processing container, and a pyrolyzer for thermally decomposing thermally decomposable sedimentary gas in the exhaust gas discharged from the processing container, provided in the exhaust passage A process container pressure adjusting method for adjusting the pressure of the process container in a substrate processing apparatus comprising:
A method for adjusting a pressure in a processing container, wherein the pressure in the processing container is adjusted by adjusting an exhaust conductance in the pyrolyzer.
The process according to claim 11, wherein the adjustment of the exhaust conductance in the pyrolyzer is performed by one or a plurality of baffle plates arranged in an exhaust passage in the pyrolyzer and defining an exhaust gas passage region. Container pressure adjustment method.
The method for adjusting the pressure in the processing vessel according to claim 12, wherein the exhaust conductance is adjusted according to at least one of a position, a size, a shape of the exhaust gas passage area by the baffle plate, a number of the baffle plates, and an arrangement position. .
The process container pressure adjusting method according to any one of claims 11 to 13, wherein the thermally decomposable deposition gas is an unreacted process gas.