KR20150028574A - Stack-type atomic layer deposition apparatus and method thereof - Google Patents

Stack-type atomic layer deposition apparatus and method thereof Download PDF

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Publication number
KR20150028574A
KR20150028574A KR20130107378A KR20130107378A KR20150028574A KR 20150028574 A KR20150028574 A KR 20150028574A KR 20130107378 A KR20130107378 A KR 20130107378A KR 20130107378 A KR20130107378 A KR 20130107378A KR 20150028574 A KR20150028574 A KR 20150028574A
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South Korea
Prior art keywords
process chamber
substrate
atomic layer
precursor
chamber
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KR20130107378A
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Korean (ko)
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이춘수
정홍기
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코닉이앤씨 주식회사
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Priority to KR20130107378A priority Critical patent/KR20150028574A/en
Priority to PCT/KR2014/008050 priority patent/WO2015034208A1/en
Publication of KR20150028574A publication Critical patent/KR20150028574A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

In the present invention, in the atomic layer deposition, a plurality of unit process chambers for the atomic layer deposition process capable of separating and bonding the upper and lower chambers are arranged in a stacked manner, and a plurality of process chambers It is possible to simultaneously carry out the atomic layer deposition process in a plurality of process chambers which are realized to have a vacuum chamber for vacuum formation and pressure control and to have a minimum space for optimum process so that the amount of raw material precursor and reaction precursor can be reduced, Minimize costs and improve productivity. In addition, in the optimized process chamber, the substrate to be atomic layer deposition is completely brought into close contact with the upper process chamber or the lower process chamber, thereby preventing film formation on the back surface of the substrate.

Description

TECHNICAL FIELD [0001] The present invention relates to an apparatus and a method for depositing a stacked atomic layer,

The present invention relates to a vapor deposition reactor and a method of forming a thin film using the same, and more particularly, to a process for forming a unit process chamber for an atomic layer deposition (ALD) Type atomic layer deposition apparatus and method.

In general, a method of depositing a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or a glass substrate includes physical vapor deposition (PVD) using physical collision such as sputtering, And chemical vapor deposition (CVD).

However, in recent years, as the design rule of a semiconductor device has become finer, a thin film of a fine pattern is required and a step of a region where a thin film is formed is greatly increased, so that a fine pattern of atomic layer thickness is formed very uniformly But also the use of atomic layer deposition (ALD), which is excellent in step coverage, is increasing.

This atomic layer deposition method is similar to the general chemical vapor deposition method in that it utilizes a chemical reaction between gas molecules. However, unlike conventional CVD in which a plurality of gaseous molecules are injected into a process chamber at the same time and the resulting reaction product is deposited on the substrate, the atomic layer deposition method injects a gas containing one source material into the process chamber, There is a difference in that a product by chemical reaction between the source material at the substrate surface is deposited by chemically adsorbing the substrate and then introducing a gas containing another source material into the process chamber.

The atomic layer deposition method can be applied to a thin film encapsulation of an AMOLED display, a barrier film of a flexible substrate, a buffer layer of a solar cell, a high dielectric constant material for a ferroelectric capacitor for a semiconductor, Or aluminum (Al), a copper (Cu) wiring diffusion preventing film (TiN, TaN, etc.).

This atomic layer deposition method is currently being carried out by transferring a small-sized, batch-type, and scan-type small reactors used in plasma enhanced chemical vapor deposition (PECVD) on a substrate or in the opposite manner.

First, in the sheet processing system, a process is performed after one sheet of substrate is loaded, and is composed of a moving susceptor for input / output and heating of a substrate, a diffuser (main body of a showerhead type) for feeding process gas and an exhaust section. However, in the single-wafer type, the chambers are very thick to prevent deformation of the process chambers and peripheral portions due to external atmospheric pressure during vacuum formation, and gate valves for carrying in / There is a problem that the productivity is remarkably reduced due to a rapid increase in consumption of raw precursor and reaction precursor, a rapid increase in maintenance cost, and an increase in process time due to an increase in adsorption-purge-reaction-purge time.

In order to solve the problem of increased maintenance cost and low productivity due to the large volume of raw material precursor and reaction precursor due to the large volume of conventional atomic layer deposition equipment, The process is carried out simultaneously. This arrangement type is partially applied to the solar cell process, however, there is a problem of simultaneous film formation on the front side as well as the back side of the substrate, uniformity of the thin film on many substrates and reproducibility, There is a problem to be done.

Next, in the scan type small reactor system, several small reactors corresponding to the length of one side of the substrate in the vacuum chamber are arranged and the substrates or the small reactors are reciprocated to form a film. However, It is difficult to control the perfect gas flow in a small reactor, and it is difficult to clearly separate the precursor of the raw material and the precursor of the reaction, so that there is a problem that particle issues arise.

(Patent Literature)

Korean Patent No. 10-1044913 (registered on June 22, 2011) discloses a technique for a batch type atomic layer deposition apparatus.

Accordingly, in the present invention, a plurality of unit process chambers capable of separating and combining upper and lower parts are arranged in a stacked manner, and a separate vacuum chamber and a vacuum chamber for pressure regulation are provided outside the plurality of process chambers arranged in a stacked configuration By enabling simultaneous atomic layer deposition processes in a number of process chambers that are designed to have the smallest possible space for optimal processing, the productivity can be improved while reducing costs and minimizing process time by reducing the amount of raw precursor and reaction precursor To provide a stacked atomic layer deposition apparatus and method capable of preventing the deposition of the rear surface of the substrate by allowing the substrate to be atomic layer deposition completely in close contact with the upper process chamber or the lower process chamber in an optimized process chamber do.

The upper and lower process chambers are separated from each other during loading or unloading of a substrate to be subjected to an atomic layer deposition process. The upper process chamber and the lower process chamber are separated from each other, A process chamber in which the upper process chamber and the lower process chamber are combined to form a closed reaction space, and at least two process chambers are stacked in a vertically stacked state, The chamber includes a vacuum chamber for keeping the stacked space in a vacuum state.

The upper process chamber is fixed to the vacuum chamber, and the lower process chamber moves up and down in the vacuum chamber to be coupled to or separated from the upper process chamber.

The upper process chamber may include a gas supply unit for supplying a process gas or a purge gas to the closed reaction space on one upper surface of the upper process chamber and a gas for exhausting the gas supplied to the closed reaction space And an exhaust part is provided on the upper surface of the other side of the upper process chamber.

Further, the gas supply unit is formed at an outer or central portion on a side surface or an upper surface of the upper process chamber.

An electrode for generating plasma is formed on the lower surface of the upper process chamber.

An electrode for generating a plasma is formed at an inlet of the gas supply unit in which the process gas or the purge gas is introduced into the closed reaction space.

The electrode is surrounded by an insulator so as to be insulated from the upper process chamber.

The gas supply unit may be formed as a diffusion space or a showerhead diffuser for uniform gas flow on a side or a central part of the upper process chamber and may be formed in a vertically or horizontally perpendicular direction to the substrate in the closed reaction space, And purge gas is injected.

Further, the vacuum chamber may include a guide portion for stacking the process chamber in the inner space of the vacuum chamber, and for supporting or transferring the process chamber.

The vacuum chamber may include fixing means for fixing the upper process chamber and transfer means for moving the lower process chamber up and down.

The present invention also provides a method of depositing a layered atomic layer, comprising: loading a substrate and a mask in the process chamber; and, when the substrate and the mask are loaded, the upper process chamber and the lower process chamber of the process chamber are combined, Forming a space, and performing an atomic layer deposition process on the substrate in an enclosed reaction space.

The atomic layer deposition method may further include separating the upper process chamber and the lower process chamber from each other after the atomic layer deposition process is completed, thereby unloading the substrate.

Further, the atomic layer deposition process is performed simultaneously in the two or more process chambers.

The upper process chamber is fixed to the vacuum chamber, and the lower process chamber moves up and down in the vertical direction in the vacuum chamber to be coupled to or separated from the upper process chamber.

Further, the lower process chamber is moved up and down by a transfer means provided in the vacuum chamber, and is separated or coupled with the upper process chamber.

The step of performing the atomic layer deposition step may include the steps of supplying a raw material precursor to the substrate in the reaction space through a gas supply unit formed on one side of the process chamber, Supplying a purge gas to the substrate through the gas supply unit to exhaust a raw precursor that has not been adsorbed on the substrate, and supplying the reaction precursor to the substrate through the gas supply unit after the exhaust, Forming an atomic layer thin film through a chemical reaction with the precursor and supplying a purge gas to the substrate through the gas supply unit after the formation of the atomic layer thin film to exhaust a reaction precursor that can not bind to the precursor .

Also, at least one of the raw material precursor, the reaction precursor, and the purge gas may be supplied through a gas supply unit formed as a diffusion space or a showerhead diffuser for uniform gas flow to the side or the center of the upper process chamber, And is injected perpendicularly or horizontally to the substrate.

Generating a plasma at a lower surface of the upper process chamber corresponding to the substrate or an introduction portion connected to the reaction space when the reaction precursor is supplied to the substrate; and a step of forming the chemical precursor of the reaction precursor and the precursor And forming an atomic layer thin film through the reaction.

According to the present invention, in the atomic layer deposition, by providing a plurality of process chambers housed in a stacked manner inside a vacuum chamber, and independently performing an atomic layer deposition process in each process chamber, It is possible to simultaneously perform the process in the process chamber, thereby remarkably improving the productivity.

Also, by minimizing the space for the process in each process chamber, it is possible to improve the productivity by reducing the adsorption time of the raw precursor, the reaction time and the purge time of the reaction precursor by optimizing the volume in the process chamber, and improving the productivity of the raw material precursor, There is an advantage that the consumption of the gas can be reduced and the cost required for the atomic layer deposition process can be reduced.

In addition, a separate external vacuum chamber configuration can simplify the process chamber and reduce weight, which can reduce the maintenance cost of the atomic layer deposition equipment and increase maintenance convenience.

In addition, in the optimized process chamber, the substrate to be atomic layer deposition is completely brought into close contact with the upper process chamber or the lower process chamber, thereby preventing deposition on the back surface of the substrate.

In addition, since a plurality of process chambers are fixed to an external vacuum chamber, it is possible to solve the problem of particles generated due to the difficulty of gas control due to the relative movement between the substrate and the process chamber, It is possible to easily change the configuration of the input / output part according to the various process characteristics and the substrate in the future.

1 is a three-dimensional perspective view of an atomic layer deposition apparatus according to an embodiment of the present invention,
FIGS. 2A and 2B are cross-sectional detailed structural views of a process chamber according to an embodiment of the present invention;
FIGS. 3A and 3B are perspective views of the process chamber shown in FIGS. 2A and 2B, respectively,
FIGS. 3c and 3d are exploded perspective views of a process chamber according to another embodiment of the present invention; FIG.
FIG. 4A is a schematic cross-sectional view of a process chamber according to an embodiment of the present invention, in which the process gas is injected in a cross flow or a traveling wave manner on a substrate,
FIG. 4B is a schematic cross-sectional view of a process chamber according to an embodiment of the present invention,
FIG. 4c is a schematic cross-sectional view of a process chamber according to an embodiment of the present invention,
5A is a schematic cross-sectional view of a process chamber according to another embodiment of the present invention, in which the process gas is jetted on a substrate in a cross flow or a traveling wave manner,
FIG. 5B is a schematic cross-sectional view of a process chamber according to another embodiment of the present invention,
FIG. 5c is a schematic cross-sectional view of a process chamber according to another embodiment of the present invention, and is a schematic view illustrating an indirect plasma process. FIG.

Hereinafter, the operation principle of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. The following terms are defined in consideration of the functions of the present invention, and these may be changed according to the intention of the user, the operator, or the like. Therefore, the definition should be based on the contents throughout this specification.

FIG. 1 is a perspective view of a structure of an atomic layer deposition apparatus according to an embodiment of the present invention. The atomic layer deposition apparatus 1000 includes a plurality of process chambers 1200 and a plurality of process chambers 1200 A vacuum chamber 1100, and the like.

Hereinafter, the structure of the atomic layer deposition apparatus 1000 of the present invention will be described in detail with reference to FIG.

First, a plurality of process chambers 1200 are chambers capable of performing an atomic layer deposition process for the substrates, each having an independent space, stacked vertically and accommodated in an external vacuum chamber 1100 do. The process chamber 1200 is moved up and down by an upper process chamber 1210 whose position is fixed when the vacuum chamber 1100 is drawn into the vacuum chamber 1100 and a transfer unit provided to the vacuum chamber 1100, And a separate lower process chamber 1220.

Such a process chamber 1200 can be separated or coupled to the upper process chamber 1210 and the lower process chamber 1220 as described above to secure only a space capable of performing an optimal atomic layer deposition process, Can be minimized.

The detailed structure and operation of the upper process chamber 1210 and the lower process chamber 1220 will be described in more detail in the following description of FIG. 2 to FIG.

The process chamber 1200 is capable of entering and exiting the vacuum chamber 1100 in conjunction with the guide portion 1204 provided on the upper side or the side surface of the vacuum chamber 1100, The guide portion 1204 can be adjusted to be fixed.

The vacuum chamber 1100 has a multi-stage support portion 1202 and a guide portion 1204 that can vertically stack a plurality of process chambers therein. The vacuum chamber 1100 maintains a vacuum state, So that an atomic layer deposition process can be performed.

That is, the vacuum chamber 1100 supports a plurality of inner process chambers 1200 in which a unit process chamber 1200 configured to be detachable for the atomic layer deposition process is stacked and arranged, And to minimize the influence of external forces exerted on the inner process chamber 1200 from the environment in which there is an external atmosphere and pressure difference.

Accordingly, when a plurality of process chambers 1200 in which independent atomic layer deposition processes are performed as shown in FIG. 1 are vertically stacked in one vacuum chamber 1100, a plurality of process chambers 1200 The substrate is simultaneously formed on the substrate, so that productivity can be improved several times as compared with the conventional single substrate evaporator.

FIGS. 2A and 2B illustrate a detailed cross-sectional structure of a process chamber according to an embodiment of the present invention.

2A illustrates a state in which the lower process chamber 1220 is moved down to load the substrate 1010 and the mask 1020 into the process chamber 1200 and the process chamber is opened.

2A, when the lower process chamber 1220 is moved from the upper process chamber 1210 to the lower side in the vertical direction by the transfer unit 1110 and the substrate 1010 and the mask 1020 are opened in the process chamber And is sequentially loaded on the substrate supporting portion 1015 and the mask supporting portion 1017 in the wafer stage 1200. At this time, the upper process chamber 1210 of the process chamber 1200 is fixedly supported in the vacuum chamber 1100, and the lower process chamber 1220 is supported by the transfer chamber 1110 provided in the vacuum chamber 1100, 1100 in the vertical direction.

When the substrate 1010 and the mask 1020 are loaded on the substrate supporting portion 1015 and the mask supporting portion 1017, the lower processing chamber 1220 is raised by the transferring portion 1110, The mask 1020 is sequentially seated in the lower process chamber 1220 so that the lower process chamber 1220 is finally coupled to the upper process chamber 1210 as in FIG.

At this time, the loading of the substrate 1010 and the mask 1020 may be performed separately for each of the process chambers 1200, and the plurality of process chambers 1200 in the vacuum chamber 1100 may be simultaneously opened have.

Next, FIG. 2B illustrates a state in which the lower process chamber 1220 is moved upward to be coupled with the upper process chamber 1210 for the process progress while the substrate 1010 and the mask 1020 are loaded in the process chamber 1200 FIG.

Referring to FIG. 2B, after the substrate 1010 and the mask 1020 are loaded with the process chamber 1200 opened, the lower process chamber 1220 is raised by the transfer unit 1110 to the lower process chamber 1220 are coupled to the upper process chamber 1210 so that an independent space of the process chamber 1200 can be formed.

When an independent space is formed in which the upper process chamber 1210 and the lower process chamber 1220 are coupled to each other, the required gas is introduced into the process gas supply unit 1212 according to the progress of the process, An atomic layer deposition process can be performed.

When the atomic layer deposition process for the substrate 1010 is completed in a state where the upper process chamber 1210 and the lower process chamber 1220 are coupled as described above, the lower process chamber 1220 is moved by the transfer unit 1110 The unloading operation for separating the upper process chamber 1210 and the lower process chamber 1220 is performed and the substrate 1010 which has been processed in the unloading state is taken out of the process chamber 1200 .

3A and 3B are perspective views of the process chamber shown in FIGS. 2A and 2B, respectively.

3A is a perspective view of the upper process chamber 1210 and the lower process chamber 1220 of the process chamber 1200 from above and FIG. 3B is a perspective view of the upper process chamber 1210 and the lower process chamber 1220 of the process chamber 1200. FIG. 1220) from the bottom.

Referring to FIGS. 3A and 3B, a gas supply unit 1212 and an exhaust unit 1211 may be formed on the upper surface of the upper process chamber 1210. At this time, the gas supply unit 1212 may be formed in the shape of a round tube at the center of both side surfaces of the upper process chamber 1210. A slit 1216 including an internal diffusion region is formed on the lower surface of the upper process chamber 1210 in order to ensure a uniform flow of the process gas over the entire surface of the substrate.

A mask support 1017 for seating the mask 1020 and a substrate support 1015 for seating the substrate 1010 may be formed on the upper surface of the lower process chamber 1220. The mask 1020 and the substrate 1010 are then loaded to be seated on the respective mask support 1017 and the substrate support 1015 and then placed in an independent space in the process chamber that is created upon coupling the lower process chamber and the upper process chamber . A connection portion 1018 is formed on the lower surface of the lower process chamber for increasing the weight of the mask support 1017 and the substrate support 1015 and for supporting the process height. Separate sealing parts such as an o-ring and a bellows can be additionally formed between the hole and the support.

FIGS. 3C and 3D illustrate a perspective view of a process chamber according to another embodiment of the present invention, and show a three-dimensional perspective view of a process chamber in which a gas supply unit is formed by a showerhead method.

3C is a perspective view of the upper process chamber 1210 and the lower process chamber 1220 of the process chamber 1200 from above and FIG. 3D is a perspective view of the upper process chamber 1210 and the lower process chamber 1210 of the process chamber 1200. FIG. 1220) from the bottom.

Referring to FIGS. 3c and 3d, a gas supply unit 1212 and an exhaust unit 1211 may be formed on the upper surface of the upper process chamber 1210. At this time, the gas supply unit 1212 may be formed in the shape of a round tube at the center of both side surfaces of the upper process chamber 1210. A showerhead type diffuser 1312 for injecting a process gas is formed on the lower surface of the upper process chamber 1210 so that gas supplied from the gas supply unit 1212 is sprayed onto the entire surface of the substrate.

A mask support 1017 for seating the mask 1020 and a substrate support 1015 for seating the substrate 1010 may be formed on the upper surface of the lower process chamber 1220. The mask 1020 and the substrate 1010 are then loaded to be seated on the respective mask support 1017 and the substrate support 1015 and then transferred to a process And is located in an independent space in the chamber 1200. A connection portion 1018 for fixing the mask support 1017 and the substrate support 1015 to the process chamber 1200 is formed on the lower surface of the lower process chamber 1220.

4A is a cross-sectional view of a process chamber according to an embodiment of the present invention, showing a schematic configuration in which the process gas is injected in a cross flow or a traveling wave manner on a substrate.

Referring to FIG. 4A, a raw material precursor, a reaction precursor, and a purge gas are introduced into a substrate 1010 located inside the process chamber 1200 from one side of the upper process chamber 1210 through a gas supply unit 1212, And a process gas or purge gas used in each process is exhausted through a gas exhaust unit 1211 formed on the other side of the upper process chamber 1210 have.

Hereinafter, the operation of the substrate 1010 will be described with reference to the case where the raw precursor (TAM or the like) supplied to the gas supply unit 1212 passes through the area of the corrugated or wavy shape where one side of the upper process chamber 1210 is easily diffused, So that the adsorption reaction occurs on the upper surface of the substrate 1010 which is seated in the lower process chamber 1220. [

After the adsorption is completed, purge gas (Ar, O 2 , N 2 , N 2 O, etc.) is supplied to the gas supply unit 1212 to discharge the source precursor remaining on the substrate to the gas exhaust unit 1211, Is supplied to the gas supply unit 1212 and is injected into the substrate 1010 to form a desired atomic layer thin film by a chemical reaction between the raw material precursor and the reaction precursor.

After the thin film is formed on the substrate 1010, the purge gas is supplied to the gas supply unit 1212 again to remove the remaining precursor, which is not bonded to the substrate precursor on the substrate 1010, And the atomic layer thin film on the substrate 1010 is formed to a desired thickness by repeating the above four steps as one cycle.

At this time, in order to smoothly react the reaction precursor and improve the thin film characteristics, a heater function is applied to the lower process chamber 1220 to control the temperature of the substrate 1010, thereby performing a susceptor function. After the upper process chamber 1210 and the lower process chamber 1220 are coupled to each other, the process chamber 1200 is coupled to the lower portion of the process chamber 1200 to prevent particles from being generated due to gas leakage to the outside of the process chamber 1200, A base sealing portion 1221 and an additional sealing portion 1222 can be formed outside the process chamber 1220 and a surface contact forming portion for perfect surface contact between the upper process chamber 1210 and the lower process chamber 1220 It may be further configured.

Hereinafter, the atomic layer deposition process in the upper process chamber 1200 will be described in more detail.

First, when the upper process chamber 1210 and the lower process chamber 1220 of the process chamber 1200 are combined and the process of the atomic layer deposition process becomes possible, in the first step of the atomic layer deposition process, 1212 and the raw material precursor supplied through the gas supply unit 1212 is injected onto the substrate 1010 to be subjected to the atomic layer deposition process so that a single molecular layer of the raw precursor . Next, when the precursor of the raw material is sufficiently injected on the substrate 1010, the purge gas is supplied to the gas supply unit 1212 in the second step of the atomic layer deposition process, and the physical adsorption Layer raw material precursor is separated by the purge gas from the substrate 1010 and exhausted through the gas exhaust portion 1211 to obtain a single molecular layer of the raw material precursor.

At this time, when the precursor material is injected onto the substrate 1010, the precursor material is chemically or physically adsorbed on the surface of the substrate 1010 to form a thin film. In this state, an inert purge gas is introduced into the substrate 1010 The raw precursor of the physical adsorption layer having relatively weak bonding force is separated from the substrate 1010 and exhausted. However, the precursor of the physical adsorption layer is bonded via the covalent bond on the substrate 1010, The raw precursor of the chemisorbing layer is not separated.

Next, in a third step of the atomic layer deposition process, the reaction precursor is supplied through the gas supply unit 1212 to spray the reaction precursor onto the substrate 1010. Accordingly, the reaction precursor injected onto the substrate 1010 reacts with the raw precursor adsorbed on the substrate 1010 to form an atomic layer thin film. When the atomic layer deposition is performed by the gas phase reaction between the precursor and the reaction precursor as described above, the purge gas is supplied through the gas supply unit 1212 in the fourth step of the atomic layer deposition process, Precursor or physically adsorbed molecules.

By repeating the above-described four-step atomic layer deposition process in one cycle, the atomic layer thin film is formed on the substrate 1010 to a desired thickness.

At this time, in the above-described atomic layer deposition process, the gas supply unit 1212 is formed on one side of the process chamber 1200, and the process gas is sprayed on the substrate in a cross flow or a moving wave manner. However, The gas supply unit 1212 may be formed as a shower head type or the like on the upper process chamber 1210 so that the precursor may be injected perpendicularly to the surface of the substrate 1010.

FIG. 4B is a cross-sectional view of a process chamber 1200 according to an embodiment of the present invention, showing a schematic configuration capable of plasma processing.

Referring to FIG. 4B, the raw material precursor, the reaction precursor, the fugitive material, and the like are supplied to the substrate 1010 located inside the process chamber 1200 from one side of the outer side of the upper process chamber 1210 through the gas supply unit 1212, So that the process gas or purge gas used in each process is exhausted through the gas exhaust unit 1211 formed on the other side of the upper process chamber 1210. [ .

4B, an electrode 1313 for plasma formation is disposed at the center of the upper process chamber 1210, and an electrode 1313 and an upper process chamber (not shown) are formed in order to use plasma in the atomic layer deposition process, 1210 are formed with an insulator 1314 so as to prevent a short between the upper process chamber 1210 and the electrode 1313 from occurring.

First, the precursor of the raw material is supplied to the gas supply unit 1212 and uniformly supplied to one side of the substrate 1010, so that the upper portion of the substrate 1010, which is seated in the lower process chamber 1220, Adsorption reaction occurs on the surface.

After the adsorption of the raw precursor is completed, a purge gas is supplied to the gas supply unit 1212 to discharge the raw material precursor remaining on the substrate 1010 to the gas exhaust unit 1211.

Subsequently, the reaction precursor is supplied to the gas supply unit 1212 and injected to the substrate. Then, power is supplied to the electrode 1313 to generate a plasma 1030 directly on the substrate 1010 to generate plasma 1030, The precursor of the precursor is reacted with the precursor to form an atomic layer. At this time, in the formation of the atomic layer thin film on the substrate 1010 using the plasma 1030, the purge gas containing the reaction precursor is supplied as another embodiment, and the plasma 1030 is supplied at the time when the precursor of the raw material on the substrate 1010 is completely removed. To form a film.

FIG. 4C is a cross-sectional view of a process chamber 1200 according to an embodiment of the present invention, showing a schematic configuration capable of an indirect plasma process.

Referring to FIG. 4C, a raw material precursor, a reaction precursor, and a purge gas are introduced into the substrate 1010 located in the process chamber 1200 from one side of the upper process chamber 1210 through the gas supply unit 1212, And a process gas or a purge gas used in each process is exhausted through a gas exhaust unit 1211 formed on the other side of the upper process chamber 1210. [

4C, a separate electrode 1313 and an insulator 1314 are provided in the gas supply part 1212 to minimize the influence of the direct plasma 1030 shown in FIG. 4B on the thin film of the substrate 1010 And the like.

Hereinafter, an operation will be described. First, a raw material precursor is supplied to the gas supply unit 1212 and uniformly supplied to one side of the substrate 1010, so that the upper surface of the substrate 1010, which is seated in the lower process chamber 1220, The adsorption reaction occurs.

After the adsorption of the raw precursor is completed, a purge gas is supplied to the gas supply unit 1212 to discharge the raw material precursor remaining on the substrate 1010 to the gas exhaust unit 1211.

Next, at the time of supplying the reaction precursor to the gas supply unit 1212 and injecting the plasma to the substrate 1010, power is supplied to the electrode 1313 for plasma generation formed in the gas supply unit 1212 to generate the plasma 1030 . The reaction precursor and the radical generated by the plasma 1030 are supplied onto the substrate 1010 in accordance with the gas flow to form an atomic layer by chemical reaction between the precursor of the precursor and the precursor of the plasma 1030 .

5A is a cross-sectional view of a process chamber 1200 according to another embodiment of the present invention, showing a schematic configuration in which process gases are injected in a cross flow or a traveling wave manner on a substrate.

Referring to FIG. 5A, a raw precursor, a reaction precursor, and a purge gas are introduced into a substrate 1010 located inside the process chamber 1200 from the outside of the upper process chamber 1210 through a gas supply unit 1212, And a process gas or a purge gas used in each process is exhausted through a gas exhaust unit 1211 formed at the center of the upper process chamber 1210. [

Hereinafter, The gas is supplied uniformly onto the substrate 1010 through the gas supply unit 1212 formed on both outer sides of the upper process chamber 1210. After being used in the process, And is discharged through the base 1211. The adsorption reaction occurs at the upper surface of the substrate 1010 which is seated in the lower process chamber 1220 through the above process.

After the adsorption is completed, a purge gas is supplied to the gas supply unit 1212 to discharge the source precursor remaining on the substrate 1010 to the gas exhaust unit 1211, and then the reaction precursor is supplied to the gas supply unit 1212, ) To form a desired atomic layer thin film by a chemical reaction between the precursor of the raw material and the reaction precursor.

After the thin film is formed on the substrate 1010, the purge gas is supplied to the gas supply unit 1212 again to remove the remaining precursor, which is not bonded to the substrate precursor on the substrate 1010, And the atomic layer thin film on the substrate 1010 is formed to a desired thickness by repeating the above four steps in one cycle.

Also, in order to minimize contamination of the upper process chamber 1210, the process is progressed with the substrate or blank mask 1050 periodically replaceable by the robot while sharing the gas supply unit 1212 and the gas exhaust unit 1211 It is possible.

FIG. 5B is a cross-sectional view of a process chamber 1200 according to another embodiment of the present invention, showing a schematic configuration capable of plasma processing.

Referring to FIG. 5B, a raw precursor, a reaction precursor, and a purge gas are introduced into a substrate 1010 located in the process chamber 1200 in a showerhead manner through a showerhead diffuser 1312 formed at the center of the upper process chamber 1210 And the atomic layer deposition process, and the process gas or purge gas used in each process is exhausted through the gas exhaust unit 1211 formed at both outer sides of the upper process chamber 1210 Respectively.

The raw precursor supplied through the central portion of the upper process chamber 1210 is uniformly distributed on the substrate 1010 through the showerhead diffuser 1312 formed on the substrate 1010 in a similar manner to the substrate area, And is discharged through a gas exhaust unit 1211 formed on the outer surface of the upper process chamber 1210 after being used in the process. The adsorption reaction occurs at the upper surface of the substrate 1010 which is seated in the lower process chamber 1220 through the above process.

After the adsorption is completed, a purge gas is supplied to the gas supply unit 1212 to discharge the source precursor remaining on the substrate 1010 to the gas exhaust unit 1211, and then the reaction precursor is supplied to the gas supply unit 1212, Diffuser 1312 onto the substrate 1010. In this way, At this time, when the reaction precursor is supplied, electric power is supplied to the electrode 1413 formed in the showerhead diffuser 1312 to form the plasma 1030 on the substrate 1010, so that the distance between the raw material precursor using the plasma 1030 and the reaction precursor And a desired thin film is formed by a chemical reaction. At this time, an insulator 1314 is formed between the electrode 1413 and the upper process chamber 1210 to prevent a short circuit between the upper process chamber 1210 and the electrode 1413.

The exhaust region in the vicinity of the substrate 1010 may be formed at both ends or all four sides of the substrate 1010. In a certain region of the exhaust path, an exhaust pressure uniformity such as a corrugated shape, a wave shape, a hole type diffuser, And the exhaust inlet portion may be disposed as close as possible to the substrate 1010 to minimize contamination of unnecessary regions other than the substrate 1010 which is required to be formed.

5C shows a schematic configuration in which an indirect plasma process can be performed as a cross-sectional structure of a process chamber 1200 according to another embodiment of the present invention.

Referring to FIG. 5C, a raw precursor, a reaction precursor, and a purge gas are introduced into the substrate 1010 located in the process chamber 1200 through a showerhead diffuser 1312 formed at the center of the upper process chamber 1210, And the atomic layer deposition process, and the process gas or purge gas used in each process is exhausted through an exhaust part 1211 formed at both outer sides of the upper process chamber 1210 Respectively.

The raw precursor supplied through the central portion of the upper process chamber 1210 is transferred to the substrate 1010 through the showerhead diffuser 1312 formed on the substrate 1010 in a similar manner to the substrate 1010, And is discharged through a gas exhaust unit 1211 formed on the outer surface of the upper process chamber 1210 after being used in the process. The adsorption reaction occurs at the upper surface of the substrate 1010 which is seated in the lower process chamber 1220 through the above process.

After the adsorption is completed, a purge gas is supplied through the showerhead diffuser 1312 to discharge the raw material precursor remaining on the substrate 1010 to the gas exhaust part 1211, and then the showerhead diffuser 1312, when supplying the reaction precursor, The plasma is generated on the substrate 1010 by supplying power to the electrode 1413 formed on the plasma 1030 to form an atomic layer thin film by a chemical reaction between the precursor of the plasma 1030 and the reaction precursor.

In this case, unlike FIG. 5B, in order to prevent the risk of damage to the lower film when damage to the lower film due to ions or electrons is difficult, the electrode 1413 and the shower head A gap insulator 1414 is additionally provided between the diffuser 1312 to generate a plasma 1030 only between the electrode 1413 and the diffuser 1312 to supply radicals through dissociation of the reaction precursor to damage the substrate 1010 So that it is possible to form an atomic layer thin film.

As described above, in the present invention, in the atomic layer deposition, a plurality of unit process chambers for the atomic layer deposition process capable of separating and bonding upper and lower parts are arranged in a stacked manner, and a plurality of process chambers It is possible to simultaneously carry out the atomic layer deposition process in a plurality of process chambers which are realized to have a separate vacuum forming chamber and a vacuum chamber for controlling the pressure, Reduce usage and minimize process time to reduce costs and improve productivity. In addition, according to the present invention, the substrate to be atomic layer deposition is completely brought into close contact with the upper process chamber or the lower process chamber in the optimized process chamber, thereby preventing deposition on the back surface of the substrate.

While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. For example, although the operation of the atomic layer deposition apparatus is described by way of example in the embodiment of the present invention, the present invention is equally applicable to PECVD.

Accordingly, the scope of the invention should not be limited by the described embodiments but should be defined by the appended claims.

1100: Vacuum chamber 1200: Process chamber
1010: substrate 1015: substrate support
1017: mask supporting portion 1020: mask
1030: plasma 1050: blank mask
1110: Lower process chamber transfer part 1120: Susceptor support part
1202: multi-stage supporting portion 1204:
1210: upper process chamber 1220: lower process chamber
1211: gas exhaust part 1212: gas supply part
1221: base sealing part 1222: additional sealing part
1312: Diffuser 1313, 1413: Electrode
1314: Insulator 1414: Gap insulator

Claims (18)

The upper process chamber and the lower process chamber are separated from each other when the substrate to be subjected to the atomic layer deposition process is loaded or unloaded. When the deposition process is performed on the substrate, the upper process chamber A process chamber in which a lower process chamber is joined to form a closed reaction space,
At least two of the process chambers are stacked in a vertical direction, and the process chamber is provided with a vacuum chamber
And a second electrode.
The method according to claim 1,
Wherein the upper process chamber is fixed to the vacuum chamber and the lower process chamber moves up and down in the vacuum chamber to be coupled to or separated from the upper process chamber.
The method according to claim 1,
The upper process chamber includes:
A gas supply part for supplying a process gas or a purge gas to the sealed reaction space is provided on one upper surface of the upper process chamber,
And a gas exhaust unit for exhausting the gas supplied to the closed reaction space is provided on the upper surface of the other side of the upper process chamber.
The method of claim 3,
The gas-
Wherein the deposition chamber is formed at an outer or central portion of a side surface or an upper surface of the upper process chamber.
The method according to claim 1,
And an electrode for plasma generation is formed on a lower surface of the upper process chamber.
The method of claim 3,
Wherein an electrode for generating a plasma is formed at an inlet of the gas supply unit in which the process gas or the purge gas is introduced into the closed reaction space.
The method according to claim 6,
The electrode
And is surrounded by an insulator so as to be insulated from the upper process chamber.
The method of claim 3,
The gas-
And a showerhead diffuser for uniform gas flow at a side central portion of the upper process chamber to spray the process gas or the purge gas in a vertical or horizontal direction to the substrate in the closed reaction space. The atomic layer deposition apparatus comprising:
The method according to claim 1,
The vacuum chamber includes:
And a guide part for stacking and supporting or loading / unloading / transporting the process chamber in an internal space of the vacuum chamber.
The method according to claim 1,
The vacuum chamber includes:
A fixing means for fixing the upper process chamber, and a transfer means for moving the lower process chamber up and down.
A method of atomic layer deposition performed in a stacked atomic layer deposition apparatus wherein at least two process chambers are stacked in a vacuum chamber,
Wherein the substrate and the mask are loaded in the process chamber,
Forming a sealed reaction space by combining the upper process chamber and the lower process chamber of the process chamber when the substrate and the mask are loaded;
Performing an atomic layer deposition process on the substrate in the closed reaction space
≪ / RTI >
12. The method of claim 11,
Wherein upon completion of the atomic layer deposition process, the upper process chamber and the lower process chamber are separated and the substrate is unloaded.
12. The method of claim 11,
Wherein the atomic layer deposition process is performed simultaneously in the at least two process chambers.
12. The method of claim 11,
Wherein the upper process chamber is fixed to the vacuum chamber and the lower process chamber moves up and down in the vacuum chamber to be coupled to or separated from the upper process chamber.
12. The method of claim 11,
The lower process chamber includes:
Wherein the vacuum chamber is vertically moved by the transfer means provided in the vacuum chamber to be separated or coupled with the upper process chamber.
12. The method of claim 11,
The step of performing the atomic layer deposition process includes:
Supplying a raw material precursor to the substrate in the reaction space through a gas supply unit formed on one upper surface of the process chamber,
Supplying a purge gas to the substrate through the gas supply unit after the source precursor is adsorbed on the substrate to evacuate the raw precursor that has not been adsorbed on the substrate;
Supplying a reaction precursor to the substrate through the gas supply unit to form an atomic layer thin film through a chemical reaction with the raw precursor,
Supplying a purge gas to the substrate through the gas supply unit after the formation of the atomic layer thin film to exhaust a reaction precursor not capable of bonding with the raw precursor
And depositing an atomic layer on the substrate.
17. The method of claim 16,
At least one of the raw material precursor, the reaction precursor,
Characterized in that the gas is supplied through a gas supply portion formed as a diffusion space or a showerhead diffuser for uniform gas flow to the side or center of the upper process chamber and is sprayed in a vertical or horizontal direction on the substrate in the reaction space Way.
17. The method of claim 16,
Further comprising generating a plasma at a lower surface of the upper process chamber corresponding to the substrate when the reaction precursor is supplied to the substrate, or at an inlet connected to the reaction space,
Wherein the step of forming the atomic layer thin film induces a chemical reaction between the reaction precursor and the precursor material using the plasma.
KR20130107378A 2013-09-06 2013-09-06 Stack-type atomic layer deposition apparatus and method thereof KR20150028574A (en)

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