WO2020036261A1 - Apparatus for depositing atomic layer and method for depositing atomic layer using same - Google Patents

Abstract

The present invention relates to an apparatus for depositing an atomic layer and a method for depositing an atomic layer using same. The apparatus for depositing an atomic layer, according to the present invention, is an apparatus for depositing an atomic layer for forming an atomic layer on a substrate, and comprises: a substrate transfer unit for seating a substrate thereon and transferring the substrate in a first direction and in a second direction different from the first direction; a gas supply unit, disposed above the substrate transferred by the substrate transfer unit, including a source gas supply module for supplying a source gas, a reactant gas supply module for supplying a reactant gas, and a purge gas supply module disposed between the source gas supply module and the reactant gas supply module; and a gas supply pipe unit including a source gas supply pipe for connecting the source gas supply module and a source gas supply source, and a reactant gas supply pipe connecting the reactant gas supply module and a reactant gas supply source, wherein at least one of the source gas supply module and the reactant gas supply module may change a gas supply direction with respect to the substrate according to a substrate transfer direction of the substrate transfer unit.

Description

Atomic layer deposition apparatus and atomic layer deposition method using the same

The present invention relates to an atomic layer deposition apparatus and an atomic layer deposition method.

In general, a method of depositing a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or glass includes physical vapor deposition (PVD) using physical collisions such as sputtering, and chemical reaction using a chemical reaction. Chemical vapor deposition (CVD) and the like.

Recently, as the design rules of semiconductor devices are drastically fined, a thin film of a fine pattern is required, and the step height of the region where the thin film is formed is also very large, and thus a fine pattern of atomic layer thickness can be formed very uniformly. In addition, the use of atomic layer deposition (ALD) with excellent step coverage has been increasing.

This atomic layer deposition method is similar to the general chemical vapor deposition method in that it utilizes chemical reactions between gas molecules. However, unlike conventional CVD in which a plurality of gas molecules are simultaneously injected into a process chamber to deposit a reaction product generated on a substrate, the atomic layer deposition method is heated by injecting a gas containing one source material into the process chamber. The difference is that the product is deposited by reaction between the source materials at the substrate surface by adsorbing to the substrate and then injecting a gas containing another source material into the process chamber.

However, in the atomic layer deposition process, due to the limitation of the reactivity between the source gas and the reactive gas, there is a problem that the deposition takes a long time.

Therefore, in order to reduce the deposition time in the atomic layer deposition process, an atomic layer deposition method such as a space division method in which a substrate is moved in a process chamber and a source gas or a reactive gas is supplied to each deposition region to perform atomic layer deposition It is proposed.

The present invention is to provide an atomic layer deposition apparatus and an atomic layer deposition method using the same to improve the atomic layer deposition performance, to form a high quality atomic layer faster.

In an atomic layer deposition apparatus according to an aspect of an embodiment of the present invention, in an atomic layer deposition apparatus for forming an atomic layer on a substrate, the substrate is seated, the second direction different from the first direction and the first direction A substrate transfer unit transferring the substrate in a direction; And a source gas supply module disposed above the substrate conveyed by the substrate transfer unit, a source gas supply module supplying a source gas, a reaction gas supply module supplying a reaction gas, and between the source gas supply module and the reaction gas supply module. A gas supply unit including a purge gas supply module disposed in the gas supply unit; And a gas supply pipe part including a source gas supply pipe connecting the source gas supply module and a source gas supply source, and a reactant gas supply pipe connecting the reactant gas supply module and a reactant gas supply source. At least one of a supply module and the reactive gas supply module may vary a gas supply direction with respect to a substrate according to a substrate transfer direction of the substrate transfer unit.

In addition, at least one of the source gas supply module and the reactive gas supply module may include a first end gas supply passage and a second end gas supply passage connected to one of the source gas supply pipe and the reaction gas supply pipe. And a gas supply nozzle body formed, wherein the first end gas supply flow path is perpendicular to a plane in which the substrate is formed, and is inclined at a predetermined first supply angle with respect to a third direction toward the substrate from the gas supply part. In this case, one of the source gas and the reactive gas is supplied to the substrate, and the first end gas supply passage and the second end gas supply passage may be alternately activated according to the transfer direction of the substrate.

The second terminal gas supply flow passage may include any one of the source gas and the reactive gas on the substrate in a direction inclined at a second supply angle predetermined with respect to the third direction orthogonal to the plane on which the substrate is formed. The first gas supply direction by the first end gas supply flow path includes a first horizontal supply vector component parallel to the first direction and a first vertical supply vector component parallel to the third direction; The second gas supply direction by the two-terminal gas supply flow path includes a second horizontal supply vector component parallel to the second direction and a second vertical supply vector component parallel to the third direction, wherein the first vertical supply vector component and the The second vertical feed vector component may be the same.

The first end gas supply passage and the second end gas supply passage each include a first nozzle unit formed to be inclined at the first supply angle and a second nozzle unit formed to be inclined at the second supply angle. It may include.

In addition, when the substrate transfer unit transfers the substrate in the first direction, the second end gas supply flow path is activated, and when the substrate transfer unit transfers the substrate in the second direction, supply the first end gas. The flow path can be activated.

In addition, at least one of the source gas supply module and the reactive gas supply module may be configured to selectively supply one of the source gas and the reactive gas to the first end gas supply flow path and the second end gas supply flow path. It may include a valve unit unit.

In addition, the valve unit may include a first end valve unit disposed on the first end gas supply passage and a second end valve unit disposed on the second end gas supply passage.

The valve unit may be installed at a point where the first end gas supply flow path and the second end gas supply flow path branch from one of the source gas supply pipe and the reactive gas supply pipe.

In addition, at least one of the source gas supply module and the reactive gas supply module may be spaced apart from each other with an end gas supply flow path for supplying any one of the source gas and the reaction gas interposed therebetween. And a first exhaust passage and a second exhaust passage for discharging the surplus gas between the gas supply unit and the substrate to the outside, wherein the first exhaust pressure of the first exhaust passage and the second exhaust passage of the second exhaust passage are included. The exhaust pressures can be independent of each other.

In addition, when the substrate transfer unit transfers the substrate in the first direction, the first exhaust pressure provided by the first exhaust passage spaced apart in the first direction with respect to the second exhaust passage may be measured. The second exhaust pressure provided by the second exhaust flow path is greater than the second exhaust pressure provided by the second exhaust flow path, and when the substrate transfer unit transports the substrate in the second direction. It may be formed smaller than the first exhaust pressure provided by.

In addition, a pumping module unit including a first pumping module connected to the first exhaust passage, and a second pumping module connected to the second exhaust passage; And an exhaust pipe part including a first exhaust pipe connecting the first pumping module and the first exhaust flow path and a second exhaust pipe connecting the second pumping module and the second exhaust flow path. The first pumping module provides the first exhaust pressure to the first exhaust passage, and the second pumping module provides the second exhaust pressure to the second exhaust passage, and the first pumping module and the first pumping module. The second pumping module may vary the first exhaust pressure and the second exhaust pressure according to the transfer direction of the substrate and provide the first exhaust pressure and the second exhaust passage.

In addition, a pumping module unit including a first pumping module connected to the first exhaust passage and the second exhaust passage, and a second pumping module connected to the first exhaust passage and the second exhaust passage; A first variable valve unit disposed between a first pumping module and the first exhaust flow path, a second variable valve unit disposed between the first pumping module and the second exhaust flow path, the second pumping module and the And a variable valve unit including a third variable valve unit disposed between a first exhaust flow path and a fourth variable valve unit disposed between the second pumping module and the second exhaust flow path. The exhaust pressure provided by each of the pumping module and the second pumping module is not variable, and the exhaust pressure of the pumping module of any one of the first pumping module and the second pumping module is the same as that of the other pumping module. When the first variable valve and the fourth variable valve are opened, the second variable valve and the third variable valve are closed, and the first variable valve and the fourth variable valve are closed. When closed, the second variable valve and the third variable valve may be open.

Further, between the first pumping module, the first variable valve, and the second variable valve, condensation of the reaction gas and the source gas with the first pumping module via the first variable valve or the second variable valve is performed. A first trap portion for suppressing is disposed, and flows to the second pumping module via the third variable valve or the fourth variable valve between the second pumping module, the third variable valve and the fourth variable valve. A second trap portion for suppressing condensation of the reaction gas and the source gas may be disposed.

In addition, at least one of the source gas supply pipe and the reaction gas pipe, a plasma electrode for supplying a voltage to the source gas or the reaction gas flowing toward the gas supply unit to plasma the source gas or the reaction gas In addition, the plasma electrode unit may include a first electrode connected to the source gas supply pipe or the reaction gas supply pipe and a second electrode provided in the source gas supply pipe or the reaction gas supply pipe.

In addition, any one of the first electrode and the second electrode of the plasma electrode unit is connected to an RF oscillator, the other is a ground electrode, and the second electrode is in the source gas supply pipe or the reactive gas supply pipe. It may be formed extending in the direction parallel to the flow direction of the source gas or the reaction gas flowing in the.

An atomic layer deposition apparatus according to another aspect of an embodiment of the present invention, in the atomic layer deposition apparatus for forming an atomic layer on the substrate, the substrate is seated, the second direction different from the first direction and the first direction A substrate transfer unit transferring the substrate in a direction; And a source gas supply module disposed above the substrate conveyed by the substrate transfer unit, a source gas supply module supplying a source gas, a reaction gas supply module supplying a reaction gas, and between the source gas supply module and the reaction gas supply module. A gas supply unit including a purge gas supply module disposed in the gas supply unit; And a gas supply pipe part including a source gas supply pipe connecting the source gas supply module and a source gas supply source, and a reactive gas supply pipe connecting the reactant gas supply module and a reactant gas supply source. At least one of the supply module and the reactive gas supply module is spaced apart from each other with an end gas supply flow path for supplying any one of the source gas and the reaction gas and the end gas supply flow path interposed therebetween, and the gas supply portion And a first exhaust passage and a second exhaust passage for discharging excess gas between the substrates to the outside, wherein the first exhaust pressure of the first exhaust passage and the second exhaust pressure of the second exhaust passage are mutually different. Independent.

In addition, at least one of the source gas supply module and the reactive gas supply module includes a gas supply nozzle body in which the terminal gas supply flow path is formed, which is connected to one of the source gas supply pipe and the reactive gas supply pipe. The terminal gas supply passage includes a first terminal gas supply passage and a second terminal gas supply passage, wherein the first terminal gas supply passage is orthogonal to a plane on which the substrate is formed, and the substrate is removed from the gas supply unit. One of the source gas and the reactive gas is supplied to the substrate in a direction inclined at a first supply angle with respect to the third direction, wherein the second terminal gas supply flow path includes a plane on which the substrate is formed. The source in a direction inclined at a second predetermined supply angle with respect to the third direction that is orthogonal; Scan and the reaction gas supplied to any one of the substrate, the first end gas supply passage and the second end gas supply passage can be activated alternately according to the direction of transport of the substrate.

Atomic layer deposition method according to another aspect of an embodiment of the present invention, in the atomic layer deposition method for depositing an atomic layer on a substrate using an atomic layer deposition apparatus, the substrate in a first direction and a different from the first direction A substrate mounting step of mounting on a substrate transfer part for transferring in two directions; A first deposition mode step of forming an atomic layer with respect to the substrate while transferring the substrate in the first direction while the substrate is mounted on the substrate transfer part; And a second deposition mode step of forming an atomic layer with respect to the substrate while transferring the substrate in the second direction while the substrate is mounted on the substrate transfer part. In the deposition region formed between the gas supply module for supplying the source gas and the substrate, the first exhaust pressure of the first exhaust region which is located in the first direction with respect to the center of the deposition region and exhausts residual gas and The second exhaust pressure of the second exhaust region located in the second direction with respect to the reference of the deposition region is differently formed.

Further, in the first deposition mode step, the second exhaust pressure may be greater than the first exhaust pressure, and in the second deposition mode step, the second exhaust pressure may be less than the first exhaust pressure.

Further, in the second deposition mode step, the gas supply module has a first vertical supply vector component parallel to a third direction which is a direction perpendicular to the substrate and a first horizontal supply vector component parallel to the first direction. Supplying the source gas or the reactive gas to the substrate in a first gas supply direction, and in the first deposition mode step, the gas supply module is configured to be parallel to the first vertical supply vector component and the second direction; The source gas or the reactive gas may be supplied to the substrate in a second gas supply direction having two horizontal supply vector components.

According to the proposed embodiment, a high quality atomic layer can be formed more quickly.

1 is a view showing an atomic layer deposition apparatus according to an embodiment of the present invention.

FIG. 2 is an enlarged view of part II of the atomic layer deposition apparatus in the process of operating the atomic layer deposition apparatus of FIG. 1 in the first deposition mode.

3 is a view illustrating a process of forming an atomic layer by the atomic layer deposition apparatus of FIG. 1.

FIG. 4 is an enlarged view of part II of the atomic layer deposition apparatus in the process of operating the atomic layer deposition apparatus of FIG. 1 in the second deposition mode.

FIG. 5 is a view illustrating an interior of a gas supply pipe of the atomic layer deposition apparatus of FIG. 1.

6 is a view showing an atomic layer deposition method using the atomic layer deposition apparatus of FIG.

7 is a view showing an atomic layer deposition apparatus according to another embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. In the drawings, parts irrelevant to the description are omitted to clearly describe the present invention, and like reference numerals designate like elements throughout the specification. In addition, since the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of description, the present invention is not necessarily limited to the illustrated.

In the present invention, "on" means to be located above or below the target member, and does not necessarily mean to be located above the gravity direction. In addition, throughout the specification, when a part is said to "include" a certain component, it means that it may further include other components, without excluding the other components unless otherwise stated. In addition, in this specification, a "part" includes the unit implemented by hardware, the unit implemented by software, or the unit implemented using both. In addition, one unit may be realized using two or more pieces of hardware, and two or more units may be realized by one piece of hardware.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a view showing an atomic layer deposition apparatus according to an embodiment of the present invention, Figure 2 is an enlarged portion II of the atomic layer deposition apparatus during the operation of the atomic layer deposition apparatus of FIG. 3 is a view showing a process of forming an atomic layer by the atomic layer deposition apparatus of FIG. 4 is an enlarged view of part II of the atomic layer deposition apparatus in the process of operating the atomic layer deposition apparatus of FIG. 1 in the second deposition mode, and FIG. 5 is a gas supply pipe of the atomic layer deposition apparatus of FIG. Figure showing the inside of the.

First, referring to FIG. 1, an atomic layer deposition apparatus 1 according to an embodiment of the present invention includes a substrate transfer part 100, gas supply parts 210 to 230, 310, 320, 410 and 460, and a gas supply source. 110, 120, 130, gas supply pipes 510, 520, 530, a plurality of pumping modules 610, 620, 630, 640, and a plurality of traps 710, 720, 730, 740 It includes.

The atomic layer deposition equipment gas module according to the present embodiment may form various thin film layers, and for example, may form at least one thin film layer among a metal thin film layer, an oxide thin film layer, a nitride thin film layer, a carbide thin film layer, and a sulfide thin film layer.

In more detail, the atomic layer deposition apparatus 1 has a first direction D ₁ or a first direction D in a state where the substrate S is seated on the substrate transfer part 100 in a process chamber formed therein. ₁ ) is moved in a second direction (D ₂ ) different from the source, the source gas (g _s ), the reaction gas (in the gas supply unit 210 ~ 230, 310, 320, 410 ~ 460 disposed above the substrate (S) g _r ) and a purge gas g _s , respectively, so that a source material and a reactant are deposited on the substrate S in each deposition region formed at a corresponding position.

The first direction D ₁ and the second direction D ₂ may be directions opposite to each other, for example, and the atomic layer deposition apparatus 1 forms an atomic layer with respect to the substrate S moving linearly inside. can do. In this case, the process chamber inside the atomic layer deposition apparatus 1 may be a vacuum atomic layer deposition apparatus having an air pressure lower than atmospheric pressure, or an atmospheric pressure atomic layer deposition apparatus having a pressure equal to or similar to atmospheric pressure.

As in the present embodiment, in the case of the spatial division type atomic layer deposition apparatus 1, a source gas is provided between the deposition region where the source gas g _s is deposited and the deposition region where the reactive gas g _r is deposited. A purge gas g _p is supplied to prevent the mixing of the g _s and the reactive gas g _r with each other.

For example, the source gas g _s for forming the metal thin film layer is one of TriMethyl Aluminum (TMA), Tri Ethyl Aluminum (TEA), and Di Methyl Aluminum Chloride (DMACl), and the reaction gas g _r is , Oxygen gas and ozone gas. In this case, as the purge gas g _p , any one of argon (Ar), nitrogen (N 2), helium (He), or a mixture of two or more may be used. In addition, the source gas g _s for forming the silicon thin film layer may be one of silane (Silane, SiH 4), disilane (Disilane, Si 2 H 6), and silicon tetrafluoride (SiF 4) including a silicon, and a reaction gas. (g _r ) may be one of an oxygen gas and an ozone gas. In this case, as the purge gas, any one of argon (Ar), nitrogen (N 2), helium (He), or a mixture of two or more may be used. In this case, the source gas g _s , the purge gas g _p , and the reaction gas g _r are not limited to the above examples and may be changed according to the needs of those skilled in the art.

The substrate transfer part 100 moves in the first direction D ₁ or the second direction D ₂ in a state where the substrate S is seated, thereby moving the substrate S in the first direction D ₁ or the second direction. Transfer direction D ₂ . The substrate transfer unit 100 may be, for example, a stage or a conveyor belt that is slidably movable.

The gas supply sources 110, 120, and 130 include a purge gas supply source 110 for supplying a purge gas g _p , a reaction gas supply source 120 for supplying a reaction gas g _r , and a source gas g _s . It includes a source gas source 130 for supplying.

The gas supply units 210 to 230, 310, 320, and 410 to 460 are disposed above the substrate S transferred by the substrate transfer unit 100 and supply a source gas g _s 310 to supply the source gas g _s . , 320, between the reactant gas supply modules 210, 220, and 230 supplying the reactant gas g _r , and between the source gas supply modules 310 and 320 and the reactant gas supply modules 210, 220, and 230. And purge gas supply modules 410, 420, 430, 440, 450, and 460 disposed therein.

An atomic layer deposition apparatus 1 according to an embodiment of the present invention, for example, the first reaction gas supply module 210, the second reaction gas supply module 220, the third reaction gas supply module 210, A first source gas supply module 310 disposed between the first reactant gas supply module 210 and the second reactant gas supply module 220, and a second reactant gas supply module 220 and a third reactant gas supply module. And a second source gas supply module 320 disposed between the 230. In addition, the atomic layer deposition apparatus 1 may include a first purge gas supply module 410 disposed at a position spaced apart in the first direction D ₁ based on the first reaction gas supply module 210, and a third reaction. The sixth purge gas supply module 460 disposed at a position spaced apart in the second direction D ₂ with respect to the gas supply module 230, and the respective reactive gas supply modules 210, 220, and 230, and a source. The second purge gas supply module 420 to the fifth purge gas supply module 450 are disposed between the gas supply modules 310 and 320.

The purge gas g _p supplied from the second purge gas supply module 420 to the fifth purge gas supply module 450 toward the substrate S is mixed with the reaction gas g _r and the source gas g _s . And the purge gas g _p supplied to the substrate 100 from the first purge gas supply module 410 and the sixth purge gas supply module 460 is external to the reaction gas g _r . To prevent mixing with air coming from

The gas supply pipe parts 510, 520, and 530 may include a purge gas supply pipe 510 connected to the purge gas supply source 110, a reaction gas supply pipe 520 connected to the reaction gas supply source 120, and a source gas. A source gas supply pipe 530 connected to the source 130. The purge gas supply pipe 510 is connected to the first purge gas supply module 410 to the sixth purge gas supply module 460 so that the first purge gas supply module 410 to the sixth purge gas supply module 460 are connected to each other. The purge gas g _p is supplied to the side, and the reaction gas supply pipe 520 supplies the reaction gas g _r to the first reaction gas supply module 210 to the third reaction gas supply module 230. The source gas supply pipe 530 supplies the source gas g _s to the first source gas supply module 310 and the second source gas supply module 320.

In the atomic layer deposition apparatus 1 according to the exemplary embodiment of the present invention, the reaction gas supply modules 210, 220, and 230 and the source gas supply modules 310 and 320 are alternately disposed as described above, and the substrate 100 is disposed. While moving in the first direction D ₁ or the second direction D ₂ , on one surface of the substrate S facing the reactive gas supply modules 210, 220, 230 and the source gas supply modules 310, 320. Adsorption and reaction of the reaction gas g _r and the source gas gs are performed continuously, so that atomic layer deposition can be performed more quickly.

Meanwhile, the pumping modules 610, 620, 630, and 640 may be configured to discharge the source gas g _s and the reactant gas g _{r that} are not adsorbed or reacted with the substrate S to the outside in the process chamber. A first pumping module 710, a second pumping module 720, and a source gas supply module 310, 320 that provide exhaust pressure and are connected to the reactive gas supply module 210, 220, 230. And a third pumping module 730 and a fourth pumping module 740. The pumping modules 610, 620, 630, 640 according to the present embodiment may be a compressor for providing exhaust pressure, and the pumping modules 610, 620, 630, 640 may vary the exhaust pressure according to a control signal. Can be.

The trap units 710, 720, 730, and 740 are exhausted to connect the pumping modules 710, 720, 730, and 740 to the reactive gas supply modules 210, 220, 230, and the source gas supply modules 310, 320. Reaction gas g _r disposed in the pipe portions 541, 542, 543, and 543 and flowing to the pumping module 710, 720, 730, and 740 through the exhaust pipe portions 541, 542, 543, and 543, or Condensation of the source gas g _s is suppressed to improve the exhaust efficiency.

In exemplary embodiments, the trap parts 710, 720, 730, and 740 apply thermal energy to the exhaust flow paths 541, 542, 543, and 543 to suppress condensation of the reaction gas g _r or the source gas g _s . can do.

On the other hand, in the atomic layer deposition apparatus 1 according to the embodiment of the present invention, the substrate S moves linearly inside the processing chamber. As the substrate S moves linearly inside the processing chamber, a portion of the substrate S facing the one reaction gas supply module 210, 220, 230 or the source gas supply module 310, 320 is provided. In the deposition region in between, the density of the source gas (g _s ) or the feed gas (g _r ) is different, and the atomic layer deposition quality is reduced by the density of the under or excessive source gas (g _s ) or the supply gas (g _r ). A problem that is inhibited arises. That is, due to the surface tension between the surface of the substrate S and the source gas g _s or the supply gas g _r , the gas density of the portion of one of the deposition regions located toward the traveling direction of the substrate S is increased. The gas density of the part located on the opposite side to the advancing direction of the board | substrate S appears high.

In addition, when a structure having a large aspect ratio such as a via hole or a trench is formed in the substrate S, the substrate S may be formed in a direction perpendicular to the substrate S toward the substrate S. If the source gas g _s or the reactive gas g _r is supplied in the third direction D ₃ , a problem arises in that the source material or the reactant material cannot be smoothly adsorbed or deposited on the surface of the structure. .

Therefore, in the atomic layer deposition apparatus 1 according to the embodiment of the present invention, the exhaust pressure with respect to the portion located toward the traveling direction side of the deposition region middle substrate S and the traveling direction of the deposition region intermediate substrate S are determined. By allowing the exhaust pressures for the parts located on the opposite side to be formed differently, a uniform gas density can be formed in the deposition region.

In addition, in the atomic layer deposition apparatus 1 according to the embodiment of the present invention, the source gas supply modules 310 and 320 and the reactive gas supply modules 210, 220, and 230 are arranged in the substrate transfer direction of the substrate transfer unit 100. By varying the gas supply direction to the substrate accordingly, the atomic layer deposition quality can be improved.

Hereinafter, the configuration of the gas supply module of the atomic layer deposition apparatus 1 according to the embodiment of the present invention will be described in more detail.

FIG. 2 is an enlarged view of a portion II of the atomic layer deposition apparatus in the process of operating the atomic layer deposition apparatus of FIG. 1 in a first deposition mode, and FIG. 3 shows an atomic layer formed by the atomic layer deposition apparatus of FIG. 4 is an enlarged view of part II of the atomic layer deposition apparatus in the process of operating the atomic layer deposition apparatus of FIG. 1 in the second deposition mode.

1 to 4, the first reactive gas supply module 210 of the atomic layer deposition apparatus 1 may include a first end gas supply passage 216 and a first terminal gas supply passage 216 that are connected to the reaction gas supply pipe 520 therein. A first exhaust flow path spaced apart from each other with the gas supply nozzle body 211 in which the second end gas supply flow path 217 is formed, and the first end gas supply flow path 21 and the second end gas supply flow path 217 interposed therebetween. 212 and a second exhaust flow path 213.

The first terminal gas supply flow path 216 is a substrate S from the first reactive gas supply module 210 which is orthogonal to the plane where the substrate S is formed and disposed above the gas supply unit, for example, the substrate S. FIG. ) is destined to supply the third with respect to the direction (D _3), the first feed angle (θ _1), the substrate (S) for the reactive gas (g _r) in the direction inclined with respect to the preset.

In addition, the second terminal gas supply flow path 217 is configured such that the reaction gas g _r is inclined with respect to the substrate S in a direction inclined at a second supply angle θ ₂ set with respect to the third direction D ₃ . Supply.

Therefore, the first gas supply direction by the first end gas supply flow path 216 is the first vertical supply vector component VD ₁ parallel to the first direction D1 and the first vertical line parallel to the third direction D ₃ . Feed vector component (VD ₃₁ ). Then, the second terminal the second gas supply direction by the gas supply passage 217 in the second direction (D ₂₎ and parallel to the second horizontal feed vector component (VD ₂₎ and the third direction and parallel to the second vertical feed vector component (VD ₃₂ ).

In this case, the first vertical supply vector component VD ₃₁ and the second vertical supply vector component VD ₃₂ are the same, and the first vertical supply vector component VD ₃₁ and the second vertical supply vector component VD ₃₂ are vertical. can be said feed vector component (VD _3).

The first end gas supply flow path 216 and the second end gas supply flow path 217 are formed such that the first nozzle unit 214 and the second supply angle θ are inclined at the first supply angle θ ₁ . ₂ ) each of the second nozzle unit 215 is formed to be inclined. Thus, when the reaction gas (g _r) are supplied through the first nozzle unit 214, a reactive gas (g _r) are supplied to the deposition zone in a direction inclined at a first feed angle (θ _1), the when the reaction gas (g _r) are supplied through the second nozzle unit 214, a reactive gas (g _r) are supplied to the deposition zone in a direction which is inclined at a second feed angle (θ _2).

In addition, the first reactive gas supply module 210 may include a valve unit unit 218 for selectively supplying the reactive gas g _r to the first terminal gas supply channel 216 and the second terminal gas supply channel 217. , 219). The valve unit portions 218, 219 are provided with a first end valve unit 218 disposed on the first end gas supply passage 216 and a second end valve unit disposed on the second end gas supply passage 217. 219.

The first end valve unit 218 and the second end valve unit 219 selectively open the first end gas supply passage 216 and the second end gas supply passage 217 according to a control signal of a controller (not shown). Open and close.

Therefore, the first end gas supply flow path 216 and the second end gas supply flow path 217 according to the present embodiment are alternately activated according to the transfer direction of the substrate S, so that the reaction gas g _r is _firstly supplied. It may be supplied to the deposition region between the reactive gas supply module 210 and the substrate (S).

For example, when the substrate transfer part 100 transfers the substrate S in the first direction D ₁ , the second terminal gas supply flow path 217 is activated to transfer the reaction gas g _s to the substrate S. ) At a second supply angle θ ₂ . At this time, the first end valve unit 218 of the first end gas supply flow passage 216 that is not activated closes the first end gas supply flow passage 216 to react the reaction gas in the first end gas supply flow passage 216. (g _s ) Suppress flow (first deposition mode).

Therefore, the reaction material P of the reaction gas g _r having the second horizontal supply vector component VD ₂ in the direction opposite to the transfer direction of the substrate S has a structure such as a trench T or a via having a high aspect ratio. It may be easily adsorbed or deposited on the wall surface of the substrate, or bound to the wall surface and then easily adsorbed or deposited on the deeper trench T or the bottom surface of the via.

On the contrary, when the substrate transfer part 100 transfers the substrate S in the second direction D ₂ , the first terminal gas supply flow path 216 is activated to transfer the reaction gas g _s to the substrate S. With respect to the first supply angle θ ₁ . At this time, the second end valve unit 219 of the second end gas supply flow path 217 that is not activated closes the second end gas supply flow path 217 to react the reaction gas in the second end gas supply flow path 217. (g _s ) Suppress flow (second deposition mode).

In the present embodiment, the valve end portions 218 and 219 are disposed on the first end valve unit 218 and the second end gas supply flow passage 217, and the first end valve unit 218 and the second end valve unit. Although described as a configuration including 219, the valve unit portion is provided at a point where the first end gas supply flow path 218 and the second end gas supply flow path 219 branch from the reaction gas supply pipe 520. It is also possible.

On the other hand, the first exhaust passage 212 and the second exhaust passage 213 discharge the surplus gas between the first reaction gas supply module 210 and the substrate to the outside, the first exhaust passage 212 exhaust pressure (P ₁₎ and a second exhaust pressure in the exhaust passage (213) (P ₂₎ can be formed independently of each other.

When the substrate transfer unit 100 transfers the substrate S in the first direction D ₁ (first deposition mode), the substrate transfer unit 100 is spaced apart in the first direction D ₁ based on the first exhaust flow path 212. The second exhaust pressure P ₂ provided by the second exhaust flow path 213 is larger than the upper first exhaust pressure P ₁ provided by the first exhaust flow path 212.

That is, when the substrate S is conveyed in the first direction D ₁ , the second surface is caused by the surface tension of the substrate S and the purge gas g _p supplied from the second purge gas supply module 420. The density of the reaction gas g _r in the region where the exhaust flow path 213 is located is greater than the density of the reaction gas g _r in the region where the first exhaust flow path 212 is located. By forming the _second exhaust pressure P ₂ of 213 to be greater than the first exhaust pressure P ₂ of the first exhaust flow path 212, the residual reaction gas (at a higher pressure in the second exhaust flow path 213) g _r ) may be discharged to the outside from the deposition region. Therefore, the density of the reaction gas g _r may be maintained uniformly over the entire section of the deposition region between the first reaction gas supply module 210 and the substrate S. FIG.

On the contrary, when the substrate transfer part 100 transfers the substrate S in the second direction D ₂ (second deposition mode), the first exhaust pressure P ₁ provided by the first exhaust flow path 212 is It may be larger than the second exhaust pressure P ₂ provided by the second exhaust passage 213.

Meanwhile, the first pumping module 610 of the pumping modules 610, 620, 630, and 640 is connected to the first exhaust flow path 212 through the first exhaust pipe 511, and the second pumping module 620 is The second exhaust pipe 213 is connected to the second exhaust passage 213 through the second exhaust pipe 512.

The first pumping module 610 and the second pumping module 620 provide the first exhaust pressure P ₁ and the second exhaust pressure P ₂ , respectively, according to the transport direction of the substrate S. The first exhaust pressure P ₁ and the second exhaust pressure P ₂ provided by the pumping module 610 and the second pumping module 620 are variable. For example, in the first deposition mode, when the first exhaust pressure P ₁ is P, the second exhaust pressure P ₂ may be formed as 2P, and conversely, in the first deposition mode, the first exhaust pressure When P ₁ is 2P, the second exhaust pressure P ₂ may be formed as P.

Since the second reaction gas supply module 220 and the third reaction gas supply module 230 are the same as those of the first reaction gas supply module 210, detailed description thereof will be omitted.

In addition, the first source gas supply module 310 and the second source gas supply module 320 may include a third pumping module 630 and a fourth pumping module 640 for discharging the remaining source gas g _s . There is a difference in the configuration that is connected to, and in other configurations is substantially the same as the first reaction gas supply module 210, a detailed description thereof will be omitted.

On the other hand, the atomic layer deposition apparatus 1 according to an embodiment of the present invention by converting the reaction gas (g _r ) or source gas (g _s ) into a plasma, the reaction rate between the reaction gas (g _r ) and the source gas (g _s ) Can improve. Hereinafter, a configuration for plasmalizing the reaction gas g _r or the source gas g _s will be described in detail.

FIG. 5 is a view illustrating an interior of a gas supply pipe of the atomic layer deposition apparatus of FIG. 1.

Referring to FIG. 5, in the reaction gas pipe 520 according to the embodiment of the present invention, a voltage is supplied to the reaction gas g _r flowing toward the gas supply unit, for example, the first reaction gas supply module 210. By providing a plasma electrode unit 526, 527 to plasma the reaction gas (g _r ) is provided. In this case, the plasma electrode units 526 and 527 may be provided at a position adjacent to the first reactive gas supply module 210 or in the first reactive gas supply module 210.

The plasma electrode portions 526 and 527 may include a first electrode 527 connected to a reaction gas supply pipe 520 formed of a conductive material and a second electrode 526 provided in the reaction gas supply pipe 520. Include. In this embodiment, the first electrode 527 is a ground electrode, and the second electrode 526 is connected to an RF oscillator 700 that provides a high frequency voltage. The second electrode 526 extends in a direction parallel to the flow direction of the reaction gas g _r flowing in the reaction gas supply pipe 520. In this case, the wire for connecting the second electrode 527 and the RF oscillator 700 may pass through the reaction gas supply pipe 520 in an insulated state with respect to the reaction gas supply pipe 520.

According to the atomic layer deposition apparatus 1 according to the embodiment of the present invention, the reaction gas flowing in the space between the inner surface of the gas supply pipe 520 facing the second electrode 526 formed in a column shape (g) _{As r} ) is converted into plasma, there is an advantage that the plasma efficiency can be improved.

In this embodiment, the first electrode 527 is described as being connected to the reaction gas supply pipe 520 formed of a metal material, but the reaction gas supply pipe 520 in which the first electrode 527 is formed of an insulating material is described. It is also possible to form a metal coating portion or a circular cylinder formed on the inner surface of the). In addition, a configuration in which the first electrode 527 is connected to the RF oscillator and the second electrode 526 is formed as a ground electrode is also possible.

In addition, the configuration in which the plasma electrode portions 526 and 527 are formed in the source gas supply pipe 530 is also possible.

Hereinafter, an atomic layer deposition method using the atomic layer deposition apparatus 1 according to the embodiment of the present invention will be described in detail.

6 is a view showing an atomic layer deposition method using the atomic layer deposition apparatus of FIG.

Referring to FIG. 6, first, a substrate mounting step S110 for mounting the substrate S on the substrate transfer unit 100 is performed.

Next, in a state in which the substrate S is mounted on the substrate transfer part 100, a first deposition mode in which an atomic layer is formed on the substrate S while transferring the substrate S in the first direction D ₁ . Step S120 is performed.

In this case, the reaction gas supply module 210, 220, 230 and the source gas supply module 310, 320 may have the second gas having a vertical supply vector component VD ₃ and a second horizontal supply vector component VD ₂ . The reaction gas g _r and the source gas g _s are supplied to the substrate S in the supply direction.

In addition, the reactive gas supply modules 210, 220, 230, the source gas supply modules 310, 320, and the substrate S for supplying the reactive gas g _r and the source gas g _s to the substrate S are provided. In the deposition regions formed between the first exhaust pressure P ₁ and the first exhaust region P ₁ located in the first direction D ₁ with respect to the center of each of the deposition regions and exhausting residual gas; The second exhaust pressure P ₂ of the second exhaust region positioned in the second direction D ₂ with respect to the reference of the deposition region may be formed differently. The first exhaust pressure P ₁ in the first deposition mode step S120 is greater than the second exhaust pressure P ₂ .

After the substrate S is transferred in the first direction D ₁ by a predetermined distance, the transfer direction of the substrate transfer unit 100 is reversed, and the substrate S is transferred in the second direction D ₂ . A second deposition mode step S130 of forming an atomic layer with respect to (S) is performed.

In this case, the reaction gas supply module 210, 220, 230 and the source gas supply module 310, 320 may include the first gas having a vertical supply vector component VD ₃ and a first horizontal supply vector component VD ₁ . The reaction gas g _r and the source gas g _s are supplied to the substrate S in the supply direction.

In addition, the second exhaust pressure P ₁ in the second deposition mode step S130 is greater than the first exhaust pressure P ₂ .

In the present embodiment, the first exhaust pressure P ₁ and the second exhaust pressure P ₂ of the reaction gas supply modules 210, 220, 230 and the source gas supply modules 310, 320 are described as being different from each other. However, the first exhaust pressure P ₁ and the second exhaust pressure P ₂ of any one of the gas supply modules of the reactive gas supply module 210, 220, 230 and the source gas supply module 310, 320 may be Although differently formed, different types of gas supply modules may perform exhaust of residual gas without distinguishing between the first exhaust pressure P ₁ and the second exhaust pressure P ₂ .

After the substrate S is transferred in the second direction D ₁ by a predetermined distance, it is determined whether to finish the deposition (S140), and if the atomic layer deposition process is not finished, the first deposition mode step (S120). If the atomic layer deposition process is completed, the control is terminated.

The control of the first end supply passage, the second end supply passage, the first exhaust pressure P ₁ and the second exhaust pressure P ₂ according to the first deposition mode and the second deposition mode is as follows. Same as

	Board transfer direction	First end feed passage	Second end supply flow path	First exhaust pressure	Second exhaust pressure
First deposition mode	First direction (D 1 )	Disabled	Activation	greatness	littleness
Second deposition mode	Second direction (D 2 )	Activation	Disabled	littleness	greatness

Meanwhile, in the first deposition mode step S120 and the second deposition mode step S130, the first exhaust pressure P ₁ and the second exhaust pressure P ₂ are finely adjusted and supplied from the gas supply module. The reactant gas g _r and the source gas g _s supplied angles can be finely adjusted based on the preset first supply angle θ ₁ and the second supply angle θ ₂ .

7 is a view showing an atomic layer deposition apparatus according to another embodiment of the present invention.

The present embodiment differs only in the configuration of the pumping module and the exhaust passage, and in other configurations is the same as that of the atomic layer deposition apparatus of FIGS. 1 to 6, and therefore, the following description will focus on the characteristic parts of the present embodiment. do.

Referring to FIG. 7, the first pumping module 650 and the second pumping module 660 of the atomic layer deposition apparatus 1 according to the present exemplary embodiment may include source gases of the reaction gas supply modules 210, 220, and 230. Both the first and second exhaust flow paths of the supply modules 310 and 320 are connected to each other.

In addition, the atomic layer deposition apparatus 1 includes a first variable valve unit 810 disposed between the first pumping module 650 and the first exhaust passage, the first pumping module 650, and the second exhaust. A second variable valve unit 820 disposed between the flow paths, a second variable valve unit 830 disposed between the second pumping module 660 and the first exhaust flow path, a second pumping module 660, And a variable valve unit including a fourth variable valve unit 840 disposed between the second exhaust flow paths.

In addition, the exhaust pressure provided by each of the first pumping module 650 and the second pumping module 660 is not variable, and any one of the first pumping module 650 and the second pumping module 660 is pumped. The exhaust pressure of may be greater than the exhaust pressure of the other pumping module. For example, the first pumping module 650 may be formed of a high pressure compressor, and the second pumping module 660 may be formed of a low pressure compressor.

That is, in the present embodiment, the variable valve units 810, 820, 830, 840 of the variable valve unit in a state where the exhaust pressure provided by the first pumping module 650 and the second pumping module 660 is fixed. ) May be controlled to provide different exhaust pressures in the first exhaust passage and the second exhaust passage according to the transfer direction of the substrate S.

In example embodiments, in the first deposition mode, the first variable valve unit 810 and the fourth variable valve unit 840 are opened so that the high pressure first pumping module 650 is connected to the first exhaust flow path. The low pressure second pumping module 660 is connected to the second exhaust flow path. In addition, the second variable valve unit 820 and the third variable valve unit 830 are closed to disconnect the low pressure second pumping module 660 and the first exhaust flow path, and the high pressure first pumping module ( 650 and the second exhaust passage are disconnected.

Therefore, in the first deposition mode, the first exhaust pressure P ₁ of the first exhaust flow path is greater than the second exhaust pressure P ₂ of the second exhaust flow path.

On the contrary, in the second deposition mode, the second variable valve unit 820 and the third variable valve unit 830 are opened so that the high pressure first pumping module 650 is connected to the second exhaust flow path. The low pressure second pumping module 660 is connected to the first exhaust passage. Then, the first variable valve unit 820 and the fourth variable valve unit 840 are closed to disconnect the low pressure second pumping module 660 and the second exhaust flow path, and the high pressure first pumping module ( 650 and the first exhaust passage are disconnected.

According to the present embodiment, the pumping modules 650 and 660 are operated with the exhaust pressure provided by the pumping modules 650 and 660 fixed, thereby improving the operation reliability of the pumping modules 650 and 660, There is an advantage that can employ the pumping module (650, 660) of the structure.

On the other hand, the source gas g _s and the reaction in the first exhaust pipe connected to the first exhaust flow path and the second exhaust pipe connected to the second exhaust flow path of the atomic layer deposition apparatus 1 according to the present embodiment. The gas g _r is mixed and delivered to the pumping modules 650 and 660.

When the source gas g _s and the reaction gas g _r are mixed, the exhaust efficiency may be reduced by the condensed reactants of the source gas g _s and the reaction gas g _r , so that the atomic layer deposition apparatus ( 1) includes trap portions 910 and 920 for suppressing condensation of the source gas g _s and the reaction gas g _r .

The trap units 910 and 920 include a first trap unit 910 and a second trap unit 920.

The first trap part 910 is disposed between the first pumping module 650 and the first variable valve 810 and the second variable valve 820, and the first variable valve 810 or the second variable valve 820. Restriction of the reaction gas (g _r ) and the source gas (g _s ) flowing to the first pumping module 650 through the ().

The second trap part 920 is disposed between the second pumping module 660 and the third variable valve 830 and the fourth variable valve 840, and the third variable valve 830 or the fourth variable valve ( Condensation of the reactant gas g _r and the source gas g _s flowing through the 840 to the second pumping module 660 is suppressed.

Although the embodiments have been described by the limited embodiments and the drawings as described above, various modifications and variations are possible to those skilled in the art from the above description. For example, the described techniques may be performed in a different order than the described method, and / or components of the described systems, structures, devices, circuits, etc. may be combined or combined in a different form than the described method, or other components. Or, even if replaced or substituted by equivalents, an appropriate result can be achieved. Therefore, other implementations, other embodiments, and equivalents to the claims are within the scope of the following claims.

Embodiments for carrying out the invention have been described together in the best mode for carrying out the above invention.

Embodiment according to the present invention relates to an atomic layer deposition apparatus, a manufacturing apparatus applied to the semiconductor industry, etc., there is a repeatability and industrial applicability.

Claims (20)

1. An atomic layer deposition apparatus for forming an atomic layer on a substrate,

   A substrate transfer part on which a substrate is seated and transferring the substrate in a first direction and a second direction different from the first direction; And

   A source gas supply module for supplying a source gas, a reaction gas supply module for supplying a reaction gas, and a gap between the source gas supply module and the reaction gas supply module, which are disposed above the substrate conveyed by the substrate transfer unit; A gas supply unit including a purge gas supply module disposed; And

   And a gas supply pipe part including a source gas supply pipe connecting the source gas supply module and a source gas supply source, and a reactive gas supply pipe connecting the reactant gas supply module and a reactant gas supply source.

   And at least one of the source gas supply module and the reactive gas supply module may vary a gas supply direction with respect to a substrate according to a substrate transfer direction of the substrate transfer unit.
2. According to claim 1,

   At least one of the source gas supply module and the reactive gas supply module,

   A gas supply nozzle body having a first end gas supply flow path and a second end gas supply flow path connected to one of the source gas supply pipe and the reactive gas supply pipe therein, wherein the first end gas supply flow path includes: Supplying any one of the source gas and the reactive gas to the substrate in a direction orthogonal to a plane where the substrate is formed and inclined at a predetermined first supply angle with respect to a third direction from the gas supply part toward the substrate,

   And the first end gas supply passage and the second end gas supply passage are alternately activated according to a transfer direction of the substrate.
3. The method of claim 2,

   The second terminal gas supply flow passage supplies any one of the source gas and the reactive gas to the substrate in a direction inclined at a second predetermined supply angle with respect to the third direction orthogonal to the plane on which the substrate is formed. and,

   The first gas supply direction by the first terminal gas supply flow path includes a first horizontal supply vector component parallel to the first direction and a first vertical supply vector component parallel to the third direction, and the second terminal gas supply The second gas supply direction by the flow path includes a second horizontal supply vector component parallel to the second direction and a second vertical supply vector component parallel to the third direction, wherein the first vertical supply vector component and the second vertical supply An atomic layer deposition apparatus, wherein the vector components are the same.
4. The method of claim 3, wherein

   The first end gas supply passage and the second end gas supply passage each include a first nozzle unit formed to be inclined at the first supply angle and a second nozzle unit formed to be inclined at the second supply angle. An atomic layer deposition apparatus, characterized in that.
5. The method of claim 3, wherein

   When the substrate transfer unit transfers the substrate in the first direction, the second end gas supply passage is activated, and when the substrate transfer unit transfers the substrate in the second direction, the first end gas supply passage is Atomic layer deposition apparatus, characterized in that activated.
6. The method of claim 2,

   At least one of the source gas supply module and the reactive gas supply module is a valve unit for selectively supplying any one of the source gas and the reactive gas to the first end gas supply flow path and the second end gas supply flow path. An atomic layer deposition apparatus comprising a portion.
7. The method of claim 6,

   And the valve unit portion includes a first end valve unit disposed on the first end gas supply flow path and a second end valve unit disposed on the second end gas supply flow path.
8. The method of claim 6,

   And the valve unit is provided at a point where the first end gas supply flow path and the second end gas supply flow path branch from any one of the source gas supply pipe and the reactive gas supply pipe.
9. According to claim 1,

   At least one of the source gas supply module and the reactant gas supply module is spaced apart from each other with an end gas supply flow path for supplying any one of the source gas and the reactant gas interposed therebetween, A first exhaust passage and a second exhaust passage for discharging the surplus gas between the gas supply unit and the substrate to the outside;

   And the first exhaust pressure of the first exhaust passage and the second exhaust pressure of the second exhaust passage are independent of each other.
10. The method of claim 9,

    When the substrate transfer unit transfers the substrate in the first direction, the first exhaust pressure provided by the first exhaust passage spaced apart in the first direction with respect to the second exhaust passage may be the second exhaust pressure. Greater than the second exhaust pressure provided by the exhaust flow path,

    And the second exhaust pressure provided by the second exhaust flow path is smaller than the first exhaust pressure provided by the first exhaust flow path when the substrate transfer part transports the substrate in the second direction. Deposition apparatus.
11. The method of claim 10,

    A pumping module unit including a first pumping module connected to the first exhaust flow path and a second pumping module connected to the second exhaust flow path; And

    And an exhaust pipe part including a first exhaust pipe connecting the first pumping module and the first exhaust flow path and a second exhaust pipe connecting the second pumping module and the second exhaust flow path.

    The first pumping module provides the first exhaust pressure to the first exhaust passage, and the second pumping module provides the second exhaust pressure to the second exhaust passage, and the first pumping module and the first pumping module. 2. The atomic pumping apparatus of claim 2, wherein the pumping module varies the first exhaust pressure and the second exhaust pressure in accordance with a transfer direction of the substrate, and provides the first exhaust pressure and the second exhaust passage to the first exhaust passage and the second exhaust passage.
12. The method of claim 10,

    A pumping module unit including a first pumping module connected to the first exhaust passage and the second exhaust passage, and a second pumping module connected to the first exhaust passage and the second exhaust passage;

    A first variable valve unit disposed between the first pumping module and the first exhaust flow path, a second variable valve unit disposed between the first pumping module and the second exhaust flow path, and the second pumping module; And a variable valve unit including a third variable valve unit disposed between the first exhaust flow path and a fourth variable valve unit disposed between the second pumping module and the second exhaust flow path.

    The exhaust pressure provided by the first pumping module and the second pumping module, respectively, is not variable, and the exhaust pressure of any one of the first pumping module and the second pumping module is the other pumping module. Is formed greater than the exhaust pressure of

    When the first variable valve and the fourth variable valve are open, the second variable valve and the third variable valve are closed,

    And the second variable valve and the third variable valve are open when the first variable valve and the fourth variable valve are closed.
13. The method of claim 12,

    Between the first pumping module, the first variable valve and the second variable valve, to suppress the condensation of the reaction gas and the source gas to the first pumping module via the first variable valve or the second variable valve A first trap portion for

    Condensation of the reaction gas and the source gas flowing between the second pumping module, the third variable valve, and the fourth variable valve through the third variable valve or the fourth variable valve to the second pumping module. An atomic layer deposition apparatus, characterized in that the second trap portion for suppressing the arrangement.
14. According to claim 1,

    At least one of the source gas supply pipe and the reaction gas pipe may include a plasma electrode part for supplying a voltage to the source gas or the reaction gas flowing toward the gas supply part to convert the source gas or the reaction gas into a plasma. ,

    The plasma electrode part may include a first electrode connected to the source gas supply pipe or the reactive gas supply pipe and a second electrode provided in the source gas supply pipe or the reactive gas supply pipe. Device.
15. The method of claim 14,

    One of the first electrode and the second electrode of the plasma electrode unit is connected to an RF oscillator, the other is a ground electrode,

    And the second electrode extends in a direction parallel to a flow direction of the source gas or the reaction gas flowing in the source gas supply pipe or the reaction gas supply pipe.
16. An atomic layer deposition apparatus for forming an atomic layer on a substrate,

    A substrate transfer part on which a substrate is seated and transferring the substrate in a first direction and a second direction different from the first direction; And

    A source gas supply module for supplying a source gas, a reaction gas supply module for supplying a reaction gas, and a gap between the source gas supply module and the reaction gas supply module, which are disposed above the substrate conveyed by the substrate transfer unit; A gas supply unit including a purge gas supply module disposed; And

    And a gas supply pipe part including a source gas supply pipe connecting the source gas supply module and a source gas supply source, and a reactive gas supply pipe connecting the reactant gas supply module and a reactant gas supply source.

    At least one of the source gas supply module and the reactive gas supply module,

    An end gas supply flow path for supplying any one of the source gas and the reactive gas, and spaced apart from each other with the end gas supply flow path interposed therebetween, and configured to discharge surplus gas between the gas supply part and the substrate to the outside. A first exhaust passage and a second exhaust passage,

    And the first exhaust pressure of the first exhaust passage and the second exhaust pressure of the second exhaust passage are independent of each other.
17. The method of claim 16,

    At least one of the source gas supply module and the reactive gas supply module,

    A gas supply nozzle body formed therein, wherein the end gas supply flow path is connected to one of the source gas supply pipe and the reactive gas supply pipe;

    The terminal gas supply passage includes a first terminal gas supply passage and a second terminal gas supply passage,

    The first end gas supply flow passage is perpendicular to a plane in which the substrate is formed and is inclined at a predetermined first supply angle with respect to a third direction from the gas supply part toward the substrate. Supply one to the substrate,

    The second terminal gas supply flow passage supplies any one of the source gas and the reactive gas to the substrate in a direction inclined at a second predetermined supply angle with respect to the third direction orthogonal to the plane on which the substrate is formed. and,

    And the first end gas supply passage and the second end gas supply passage are alternately activated according to a transfer direction of the substrate.
18. In the atomic layer deposition method of depositing an atomic layer on a substrate using an atomic layer deposition apparatus,

    A substrate mounting step of mounting the substrate on a substrate transfer part for transferring the substrate in a first direction and a second direction different from the first direction;

    A first deposition mode step of forming an atomic layer with respect to the substrate while transferring the substrate in the first direction while the substrate is mounted on the substrate transfer part; And

    And a second deposition mode step of forming an atomic layer with respect to the substrate while transferring the substrate in the second direction while the substrate is mounted on the substrate transfer part.

    A first exhaust positioned in the first direction with respect to the center of the deposition region in a deposition region formed between a gas supply module for supplying a reactive gas or a source gas to the substrate and the substrate; And the first exhaust pressure of the region and the second exhaust pressure of the second exhaust region located in the second direction about the reference of the deposition region are different from each other.
19. The method of claim 18,

    In the first deposition mode step, the second exhaust pressure is greater than the first exhaust pressure,

    And in said second deposition mode step, said second exhaust pressure is less than said first exhaust pressure.
20. The method of claim 18,

    In the second deposition mode step, the gas supply module includes a first vertical supply vector component parallel to a third direction that is perpendicular to the substrate and a first horizontal supply vector component parallel to the first direction Supplying the source gas or the reactive gas to the substrate in a gas supply direction,

    In the first deposition mode step, the gas supply module includes the source gas or the source gas relative to the substrate in a second gas supply direction having a second horizontal supply vector component parallel to the first vertical supply vector component and the second direction. And supplying the reaction gas.

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