WO2020036261A1 - Appareil de dépôt de couche atomique et procédé de dépôt de couche atomique utilisant celui-ci - Google Patents

Appareil de dépôt de couche atomique et procédé de dépôt de couche atomique utilisant celui-ci Download PDF

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WO2020036261A1
WO2020036261A1 PCT/KR2018/014690 KR2018014690W WO2020036261A1 WO 2020036261 A1 WO2020036261 A1 WO 2020036261A1 KR 2018014690 W KR2018014690 W KR 2018014690W WO 2020036261 A1 WO2020036261 A1 WO 2020036261A1
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Prior art keywords
gas supply
substrate
module
exhaust
flow path
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PCT/KR2018/014690
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English (en)
Korean (ko)
Inventor
최학영
최영태
김동원
김상훈
김근식
Original Assignee
주식회사 넥서스비
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Priority to CN201880096524.1A priority Critical patent/CN112654732B/zh
Publication of WO2020036261A1 publication Critical patent/WO2020036261A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Definitions

  • the present invention relates to an atomic layer deposition apparatus and an atomic layer deposition method.
  • a method of depositing a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or glass includes physical vapor deposition (PVD) using physical collisions such as sputtering, and chemical reaction using a chemical reaction.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • This atomic layer deposition method is similar to the general chemical vapor deposition method in that it utilizes chemical reactions between gas molecules. However, unlike conventional CVD in which a plurality of gas molecules are simultaneously injected into a process chamber to deposit a reaction product generated on a substrate, the atomic layer deposition method is heated by injecting a gas containing one source material into the process chamber. The difference is that the product is deposited by reaction between the source materials at the substrate surface by adsorbing to the substrate and then injecting a gas containing another source material into the process chamber.
  • an atomic layer deposition method such as a space division method in which a substrate is moved in a process chamber and a source gas or a reactive gas is supplied to each deposition region to perform atomic layer deposition It is proposed.
  • the present invention is to provide an atomic layer deposition apparatus and an atomic layer deposition method using the same to improve the atomic layer deposition performance, to form a high quality atomic layer faster.
  • an atomic layer deposition apparatus in an atomic layer deposition apparatus for forming an atomic layer on a substrate, the substrate is seated, the second direction different from the first direction and the first direction A substrate transfer unit transferring the substrate in a direction; And a source gas supply module disposed above the substrate conveyed by the substrate transfer unit, a source gas supply module supplying a source gas, a reaction gas supply module supplying a reaction gas, and between the source gas supply module and the reaction gas supply module.
  • a gas supply unit including a purge gas supply module disposed in the gas supply unit; And a gas supply pipe part including a source gas supply pipe connecting the source gas supply module and a source gas supply source, and a reactant gas supply pipe connecting the reactant gas supply module and a reactant gas supply source.
  • a supply module and the reactive gas supply module may vary a gas supply direction with respect to a substrate according to a substrate transfer direction of the substrate transfer unit.
  • At least one of the source gas supply module and the reactive gas supply module may include a first end gas supply passage and a second end gas supply passage connected to one of the source gas supply pipe and the reaction gas supply pipe. And a gas supply nozzle body formed, wherein the first end gas supply flow path is perpendicular to a plane in which the substrate is formed, and is inclined at a predetermined first supply angle with respect to a third direction toward the substrate from the gas supply part.
  • the first end gas supply passage and the second end gas supply passage may be alternately activated according to the transfer direction of the substrate.
  • the second terminal gas supply flow passage may include any one of the source gas and the reactive gas on the substrate in a direction inclined at a second supply angle predetermined with respect to the third direction orthogonal to the plane on which the substrate is formed.
  • the first gas supply direction by the first end gas supply flow path includes a first horizontal supply vector component parallel to the first direction and a first vertical supply vector component parallel to the third direction;
  • the second gas supply direction by the two-terminal gas supply flow path includes a second horizontal supply vector component parallel to the second direction and a second vertical supply vector component parallel to the third direction, wherein the first vertical supply vector component and the The second vertical feed vector component may be the same.
  • the first end gas supply passage and the second end gas supply passage each include a first nozzle unit formed to be inclined at the first supply angle and a second nozzle unit formed to be inclined at the second supply angle. It may include.
  • the second end gas supply flow path is activated, and when the substrate transfer unit transfers the substrate in the second direction, supply the first end gas.
  • the flow path can be activated.
  • At least one of the source gas supply module and the reactive gas supply module may be configured to selectively supply one of the source gas and the reactive gas to the first end gas supply flow path and the second end gas supply flow path. It may include a valve unit unit.
  • valve unit may include a first end valve unit disposed on the first end gas supply passage and a second end valve unit disposed on the second end gas supply passage.
  • the valve unit may be installed at a point where the first end gas supply flow path and the second end gas supply flow path branch from one of the source gas supply pipe and the reactive gas supply pipe.
  • At least one of the source gas supply module and the reactive gas supply module may be spaced apart from each other with an end gas supply flow path for supplying any one of the source gas and the reaction gas interposed therebetween.
  • a first exhaust passage and a second exhaust passage for discharging the surplus gas between the gas supply unit and the substrate to the outside, wherein the first exhaust pressure of the first exhaust passage and the second exhaust passage of the second exhaust passage are included.
  • the exhaust pressures can be independent of each other.
  • the first exhaust pressure provided by the first exhaust passage spaced apart in the first direction with respect to the second exhaust passage may be measured.
  • the second exhaust pressure provided by the second exhaust flow path is greater than the second exhaust pressure provided by the second exhaust flow path, and when the substrate transfer unit transports the substrate in the second direction. It may be formed smaller than the first exhaust pressure provided by.
  • a pumping module unit including a first pumping module connected to the first exhaust passage, and a second pumping module connected to the second exhaust passage; And an exhaust pipe part including a first exhaust pipe connecting the first pumping module and the first exhaust flow path and a second exhaust pipe connecting the second pumping module and the second exhaust flow path.
  • the first pumping module provides the first exhaust pressure to the first exhaust passage
  • the second pumping module provides the second exhaust pressure to the second exhaust passage, and the first pumping module and the first pumping module.
  • the second pumping module may vary the first exhaust pressure and the second exhaust pressure according to the transfer direction of the substrate and provide the first exhaust pressure and the second exhaust passage.
  • a pumping module unit including a first pumping module connected to the first exhaust passage and the second exhaust passage, and a second pumping module connected to the first exhaust passage and the second exhaust passage; A first variable valve unit disposed between a first pumping module and the first exhaust flow path, a second variable valve unit disposed between the first pumping module and the second exhaust flow path, the second pumping module and the And a variable valve unit including a third variable valve unit disposed between a first exhaust flow path and a fourth variable valve unit disposed between the second pumping module and the second exhaust flow path.
  • the exhaust pressure provided by each of the pumping module and the second pumping module is not variable, and the exhaust pressure of the pumping module of any one of the first pumping module and the second pumping module is the same as that of the other pumping module.
  • the first variable valve and the fourth variable valve are opened, the second variable valve and the third variable valve are closed, and the first variable valve and the fourth variable valve are closed.
  • the second variable valve and the third variable valve may be open.
  • condensation of the reaction gas and the source gas with the first pumping module via the first variable valve or the second variable valve is performed.
  • a first trap portion for suppressing is disposed, and flows to the second pumping module via the third variable valve or the fourth variable valve between the second pumping module, the third variable valve and the fourth variable valve.
  • a second trap portion for suppressing condensation of the reaction gas and the source gas may be disposed.
  • the plasma electrode unit may include a first electrode connected to the source gas supply pipe or the reaction gas supply pipe and a second electrode provided in the source gas supply pipe or the reaction gas supply pipe.
  • any one of the first electrode and the second electrode of the plasma electrode unit is connected to an RF oscillator, the other is a ground electrode, and the second electrode is in the source gas supply pipe or the reactive gas supply pipe. It may be formed extending in the direction parallel to the flow direction of the source gas or the reaction gas flowing in the.
  • An atomic layer deposition apparatus in the atomic layer deposition apparatus for forming an atomic layer on the substrate, the substrate is seated, the second direction different from the first direction and the first direction A substrate transfer unit transferring the substrate in a direction; And a source gas supply module disposed above the substrate conveyed by the substrate transfer unit, a source gas supply module supplying a source gas, a reaction gas supply module supplying a reaction gas, and between the source gas supply module and the reaction gas supply module.
  • a gas supply unit including a purge gas supply module disposed in the gas supply unit; And a gas supply pipe part including a source gas supply pipe connecting the source gas supply module and a source gas supply source, and a reactive gas supply pipe connecting the reactant gas supply module and a reactant gas supply source. At least one of the supply module and the reactive gas supply module is spaced apart from each other with an end gas supply flow path for supplying any one of the source gas and the reaction gas and the end gas supply flow path interposed therebetween, and the gas supply portion And a first exhaust passage and a second exhaust passage for discharging excess gas between the substrates to the outside, wherein the first exhaust pressure of the first exhaust passage and the second exhaust pressure of the second exhaust passage are mutually different. Independent.
  • At least one of the source gas supply module and the reactive gas supply module includes a gas supply nozzle body in which the terminal gas supply flow path is formed, which is connected to one of the source gas supply pipe and the reactive gas supply pipe.
  • the terminal gas supply passage includes a first terminal gas supply passage and a second terminal gas supply passage, wherein the first terminal gas supply passage is orthogonal to a plane on which the substrate is formed, and the substrate is removed from the gas supply unit.
  • One of the source gas and the reactive gas is supplied to the substrate in a direction inclined at a first supply angle with respect to the third direction, wherein the second terminal gas supply flow path includes a plane on which the substrate is formed.
  • the source in a direction inclined at a second predetermined supply angle with respect to the third direction that is orthogonal; Scan and the reaction gas supplied to any one of the substrate, the first end gas supply passage and the second end gas supply passage can be activated alternately according to the direction of transport of the substrate.
  • Atomic layer deposition method in the atomic layer deposition method for depositing an atomic layer on a substrate using an atomic layer deposition apparatus, the substrate in a first direction and a different from the first direction
  • a second deposition mode step of forming an atomic layer with respect to the substrate while transferring the substrate in the second direction while the substrate is mounted on the substrate transfer part in the atomic layer deposition method for depositing an atomic layer on a substrate using an atomic layer deposition apparatus, the substrate in a first direction and a different from the first direction
  • the first exhaust pressure of the first exhaust region which is located in the first direction with respect to the center of the deposition region and exhausts residual gas and
  • the second exhaust pressure of the second exhaust region located in the second direction with respect to the reference of the deposition region is differently formed.
  • the second exhaust pressure may be greater than the first exhaust pressure, and in the second deposition mode step, the second exhaust pressure may be less than the first exhaust pressure.
  • the gas supply module has a first vertical supply vector component parallel to a third direction which is a direction perpendicular to the substrate and a first horizontal supply vector component parallel to the first direction.
  • Supplying the source gas or the reactive gas to the substrate in a first gas supply direction and in the first deposition mode step, the gas supply module is configured to be parallel to the first vertical supply vector component and the second direction;
  • the source gas or the reactive gas may be supplied to the substrate in a second gas supply direction having two horizontal supply vector components.
  • a high quality atomic layer can be formed more quickly.
  • FIG. 1 is a view showing an atomic layer deposition apparatus according to an embodiment of the present invention.
  • FIG. 2 is an enlarged view of part II of the atomic layer deposition apparatus in the process of operating the atomic layer deposition apparatus of FIG. 1 in the first deposition mode.
  • FIG. 3 is a view illustrating a process of forming an atomic layer by the atomic layer deposition apparatus of FIG. 1.
  • FIG. 4 is an enlarged view of part II of the atomic layer deposition apparatus in the process of operating the atomic layer deposition apparatus of FIG. 1 in the second deposition mode.
  • FIG. 5 is a view illustrating an interior of a gas supply pipe of the atomic layer deposition apparatus of FIG. 1.
  • FIG. 6 is a view showing an atomic layer deposition method using the atomic layer deposition apparatus of FIG.
  • FIG. 7 is a view showing an atomic layer deposition apparatus according to another embodiment of the present invention.
  • “on” means to be located above or below the target member, and does not necessarily mean to be located above the gravity direction.
  • a part when a part is said to "include” a certain component, it means that it may further include other components, without excluding the other components unless otherwise stated.
  • a "part” includes the unit implemented by hardware, the unit implemented by software, or the unit implemented using both.
  • one unit may be realized using two or more pieces of hardware, and two or more units may be realized by one piece of hardware.
  • FIG. 1 is a view showing an atomic layer deposition apparatus according to an embodiment of the present invention
  • Figure 2 is an enlarged portion II of the atomic layer deposition apparatus during the operation of the atomic layer deposition apparatus of FIG. 3 is a view showing a process of forming an atomic layer by the atomic layer deposition apparatus of FIG. 4 is an enlarged view of part II of the atomic layer deposition apparatus in the process of operating the atomic layer deposition apparatus of FIG. 1 in the second deposition mode
  • FIG. 5 is a gas supply pipe of the atomic layer deposition apparatus of FIG. Figure showing the inside of the.
  • an atomic layer deposition apparatus 1 includes a substrate transfer part 100, gas supply parts 210 to 230, 310, 320, 410 and 460, and a gas supply source. 110, 120, 130, gas supply pipes 510, 520, 530, a plurality of pumping modules 610, 620, 630, 640, and a plurality of traps 710, 720, 730, 740 It includes.
  • the atomic layer deposition equipment gas module may form various thin film layers, and for example, may form at least one thin film layer among a metal thin film layer, an oxide thin film layer, a nitride thin film layer, a carbide thin film layer, and a sulfide thin film layer.
  • the atomic layer deposition apparatus 1 has a first direction D 1 or a first direction D in a state where the substrate S is seated on the substrate transfer part 100 in a process chamber formed therein. 1 ) is moved in a second direction (D 2 ) different from the source, the source gas (g s ), the reaction gas (in the gas supply unit 210 ⁇ 230, 310, 320, 410 ⁇ 460 disposed above the substrate (S) g r ) and a purge gas g s , respectively, so that a source material and a reactant are deposited on the substrate S in each deposition region formed at a corresponding position.
  • D 2 second direction
  • the first direction D 1 and the second direction D 2 may be directions opposite to each other, for example, and the atomic layer deposition apparatus 1 forms an atomic layer with respect to the substrate S moving linearly inside. can do.
  • the process chamber inside the atomic layer deposition apparatus 1 may be a vacuum atomic layer deposition apparatus having an air pressure lower than atmospheric pressure, or an atmospheric pressure atomic layer deposition apparatus having a pressure equal to or similar to atmospheric pressure.
  • a source gas is provided between the deposition region where the source gas g s is deposited and the deposition region where the reactive gas g r is deposited.
  • a purge gas g p is supplied to prevent the mixing of the g s and the reactive gas g r with each other.
  • the source gas g s for forming the metal thin film layer is one of TriMethyl Aluminum (TMA), Tri Ethyl Aluminum (TEA), and Di Methyl Aluminum Chloride (DMACl), and the reaction gas g r is , Oxygen gas and ozone gas.
  • the purge gas g p any one of argon (Ar), nitrogen (N 2), helium (He), or a mixture of two or more may be used.
  • the source gas g s for forming the silicon thin film layer may be one of silane (Silane, SiH 4), disilane (Disilane, Si 2 H 6), and silicon tetrafluoride (SiF 4) including a silicon, and a reaction gas.
  • g r may be one of an oxygen gas and an ozone gas.
  • the purge gas any one of argon (Ar), nitrogen (N 2), helium (He), or a mixture of two or more may be used.
  • the source gas g s , the purge gas g p , and the reaction gas g r are not limited to the above examples and may be changed according to the needs of those skilled in the art.
  • the substrate transfer part 100 moves in the first direction D 1 or the second direction D 2 in a state where the substrate S is seated, thereby moving the substrate S in the first direction D 1 or the second direction. Transfer direction D 2 .
  • the substrate transfer unit 100 may be, for example, a stage or a conveyor belt that is slidably movable.
  • the gas supply sources 110, 120, and 130 include a purge gas supply source 110 for supplying a purge gas g p , a reaction gas supply source 120 for supplying a reaction gas g r , and a source gas g s . It includes a source gas source 130 for supplying.
  • the gas supply units 210 to 230, 310, 320, and 410 to 460 are disposed above the substrate S transferred by the substrate transfer unit 100 and supply a source gas g s 310 to supply the source gas g s . , 320, between the reactant gas supply modules 210, 220, and 230 supplying the reactant gas g r , and between the source gas supply modules 310 and 320 and the reactant gas supply modules 210, 220, and 230.
  • purge gas supply modules 410, 420, 430, 440, 450, and 460 disposed therein.
  • An atomic layer deposition apparatus 1 for example, the first reaction gas supply module 210, the second reaction gas supply module 220, the third reaction gas supply module 210, A first source gas supply module 310 disposed between the first reactant gas supply module 210 and the second reactant gas supply module 220, and a second reactant gas supply module 220 and a third reactant gas supply module. And a second source gas supply module 320 disposed between the 230.
  • the atomic layer deposition apparatus 1 may include a first purge gas supply module 410 disposed at a position spaced apart in the first direction D 1 based on the first reaction gas supply module 210, and a third reaction.
  • the sixth purge gas supply module 460 disposed at a position spaced apart in the second direction D 2 with respect to the gas supply module 230, and the respective reactive gas supply modules 210, 220, and 230, and a source.
  • the second purge gas supply module 420 to the fifth purge gas supply module 450 are disposed between the gas supply modules 310 and 320.
  • the purge gas g p supplied from the second purge gas supply module 420 to the fifth purge gas supply module 450 toward the substrate S is mixed with the reaction gas g r and the source gas g s .
  • the purge gas g p supplied to the substrate 100 from the first purge gas supply module 410 and the sixth purge gas supply module 460 is external to the reaction gas g r .
  • the gas supply pipe parts 510, 520, and 530 may include a purge gas supply pipe 510 connected to the purge gas supply source 110, a reaction gas supply pipe 520 connected to the reaction gas supply source 120, and a source gas.
  • a source gas supply pipe 530 connected to the source 130.
  • the purge gas supply pipe 510 is connected to the first purge gas supply module 410 to the sixth purge gas supply module 460 so that the first purge gas supply module 410 to the sixth purge gas supply module 460 are connected to each other.
  • the purge gas g p is supplied to the side, and the reaction gas supply pipe 520 supplies the reaction gas g r to the first reaction gas supply module 210 to the third reaction gas supply module 230.
  • the source gas supply pipe 530 supplies the source gas g s to the first source gas supply module 310 and the second source gas supply module 320.
  • the reaction gas supply modules 210, 220, and 230 and the source gas supply modules 310 and 320 are alternately disposed as described above, and the substrate 100 is disposed. While moving in the first direction D 1 or the second direction D 2 , on one surface of the substrate S facing the reactive gas supply modules 210, 220, 230 and the source gas supply modules 310, 320. Adsorption and reaction of the reaction gas g r and the source gas gs are performed continuously, so that atomic layer deposition can be performed more quickly.
  • the pumping modules 610, 620, 630, and 640 may be configured to discharge the source gas g s and the reactant gas g r that are not adsorbed or reacted with the substrate S to the outside in the process chamber.
  • a third pumping module 730 and a fourth pumping module 740 may be a compressor for providing exhaust pressure, and the pumping modules 610, 620, 630, 640 may vary the exhaust pressure according to a control signal. Can be.
  • the trap units 710, 720, 730, and 740 are exhausted to connect the pumping modules 710, 720, 730, and 740 to the reactive gas supply modules 210, 220, 230, and the source gas supply modules 310, 320.
  • Reaction gas g r disposed in the pipe portions 541, 542, 543, and 543 and flowing to the pumping module 710, 720, 730, and 740 through the exhaust pipe portions 541, 542, 543, and 543, or Condensation of the source gas g s is suppressed to improve the exhaust efficiency.
  • the trap parts 710, 720, 730, and 740 apply thermal energy to the exhaust flow paths 541, 542, 543, and 543 to suppress condensation of the reaction gas g r or the source gas g s . can do.
  • the substrate S moves linearly inside the processing chamber.
  • a portion of the substrate S facing the one reaction gas supply module 210, 220, 230 or the source gas supply module 310, 320 is provided.
  • the density of the source gas (g s ) or the feed gas (g r ) is different, and the atomic layer deposition quality is reduced by the density of the under or excessive source gas (g s ) or the supply gas (g r ). A problem that is inhibited arises.
  • the gas density of the portion of one of the deposition regions located toward the traveling direction of the substrate S is increased.
  • substrate S appears high.
  • the substrate S may be formed in a direction perpendicular to the substrate S toward the substrate S. If the source gas g s or the reactive gas g r is supplied in the third direction D 3 , a problem arises in that the source material or the reactant material cannot be smoothly adsorbed or deposited on the surface of the structure. .
  • the exhaust pressure with respect to the portion located toward the traveling direction side of the deposition region middle substrate S and the traveling direction of the deposition region intermediate substrate S are determined.
  • the source gas supply modules 310 and 320 and the reactive gas supply modules 210, 220, and 230 are arranged in the substrate transfer direction of the substrate transfer unit 100.
  • the atomic layer deposition quality can be improved.
  • FIG. 2 is an enlarged view of a portion II of the atomic layer deposition apparatus in the process of operating the atomic layer deposition apparatus of FIG. 1 in a first deposition mode
  • FIG. 3 shows an atomic layer formed by the atomic layer deposition apparatus of FIG. 4 is an enlarged view of part II of the atomic layer deposition apparatus in the process of operating the atomic layer deposition apparatus of FIG. 1 in the second deposition mode.
  • the first reactive gas supply module 210 of the atomic layer deposition apparatus 1 may include a first end gas supply passage 216 and a first terminal gas supply passage 216 that are connected to the reaction gas supply pipe 520 therein.
  • the first terminal gas supply flow path 216 is a substrate S from the first reactive gas supply module 210 which is orthogonal to the plane where the substrate S is formed and disposed above the gas supply unit, for example, the substrate S.
  • FIG. ) is destined to supply the third with respect to the direction (D 3), the first feed angle ( ⁇ 1), the substrate (S) for the reactive gas (g r) in the direction inclined with respect to the preset.
  • the second terminal gas supply flow path 217 is configured such that the reaction gas g r is inclined with respect to the substrate S in a direction inclined at a second supply angle ⁇ 2 set with respect to the third direction D 3 . Supply.
  • the first gas supply direction by the first end gas supply flow path 216 is the first vertical supply vector component VD 1 parallel to the first direction D1 and the first vertical line parallel to the third direction D 3 .
  • first vertical supply vector component VD 31 and the second vertical supply vector component VD 32 are the same, and the first vertical supply vector component VD 31 and the second vertical supply vector component VD 32 are vertical.
  • the first end gas supply flow path 216 and the second end gas supply flow path 217 are formed such that the first nozzle unit 214 and the second supply angle ⁇ are inclined at the first supply angle ⁇ 1 . 2 ) each of the second nozzle unit 215 is formed to be inclined.
  • a reactive gas (g r) are supplied to the deposition zone in a direction inclined at a first feed angle ( ⁇ 1)
  • a reactive gas (g r) are supplied to the deposition zone in a direction which is inclined at a second feed angle ( ⁇ 2).
  • the first reactive gas supply module 210 may include a valve unit unit 218 for selectively supplying the reactive gas g r to the first terminal gas supply channel 216 and the second terminal gas supply channel 217. , 219).
  • the valve unit portions 218, 219 are provided with a first end valve unit 218 disposed on the first end gas supply passage 216 and a second end valve unit disposed on the second end gas supply passage 217. 219.
  • the first end valve unit 218 and the second end valve unit 219 selectively open the first end gas supply passage 216 and the second end gas supply passage 217 according to a control signal of a controller (not shown). Open and close.
  • the first end gas supply flow path 216 and the second end gas supply flow path 217 according to the present embodiment are alternately activated according to the transfer direction of the substrate S, so that the reaction gas g r is firstly supplied. It may be supplied to the deposition region between the reactive gas supply module 210 and the substrate (S).
  • the second terminal gas supply flow path 217 is activated to transfer the reaction gas g s to the substrate S.
  • the first end valve unit 218 of the first end gas supply flow passage 216 that is not activated closes the first end gas supply flow passage 216 to react the reaction gas in the first end gas supply flow passage 216.
  • the reaction material P of the reaction gas g r having the second horizontal supply vector component VD 2 in the direction opposite to the transfer direction of the substrate S has a structure such as a trench T or a via having a high aspect ratio. It may be easily adsorbed or deposited on the wall surface of the substrate, or bound to the wall surface and then easily adsorbed or deposited on the deeper trench T or the bottom surface of the via.
  • the first terminal gas supply flow path 216 is activated to transfer the reaction gas g s to the substrate S.
  • the second end valve unit 219 of the second end gas supply flow path 217 that is not activated closes the second end gas supply flow path 217 to react the reaction gas in the second end gas supply flow path 217. (g s ) Suppress flow (second deposition mode).
  • valve end portions 218 and 219 are disposed on the first end valve unit 218 and the second end gas supply flow passage 217, and the first end valve unit 218 and the second end valve unit.
  • the valve unit portion is provided at a point where the first end gas supply flow path 218 and the second end gas supply flow path 219 branch from the reaction gas supply pipe 520. It is also possible.
  • first exhaust passage 212 and the second exhaust passage 213 discharge the surplus gas between the first reaction gas supply module 210 and the substrate to the outside, the first exhaust passage 212 exhaust pressure (P 1) and a second exhaust pressure in the exhaust passage (213) (P 2) can be formed independently of each other.
  • the substrate transfer unit 100 transfers the substrate S in the first direction D 1 (first deposition mode)
  • the substrate transfer unit 100 is spaced apart in the first direction D 1 based on the first exhaust flow path 212.
  • the second exhaust pressure P 2 provided by the second exhaust flow path 213 is larger than the upper first exhaust pressure P 1 provided by the first exhaust flow path 212.
  • the second surface is caused by the surface tension of the substrate S and the purge gas g p supplied from the second purge gas supply module 420.
  • the density of the reaction gas g r in the region where the exhaust flow path 213 is located is greater than the density of the reaction gas g r in the region where the first exhaust flow path 212 is located.
  • the first exhaust pressure P 1 provided by the first exhaust flow path 212 is It may be larger than the second exhaust pressure P 2 provided by the second exhaust passage 213.
  • the first pumping module 610 of the pumping modules 610, 620, 630, and 640 is connected to the first exhaust flow path 212 through the first exhaust pipe 511
  • the second pumping module 620 is
  • the second exhaust pipe 213 is connected to the second exhaust passage 213 through the second exhaust pipe 512.
  • the first pumping module 610 and the second pumping module 620 provide the first exhaust pressure P 1 and the second exhaust pressure P 2 , respectively, according to the transport direction of the substrate S.
  • the first exhaust pressure P 1 and the second exhaust pressure P 2 provided by the pumping module 610 and the second pumping module 620 are variable.
  • the second exhaust pressure P 2 may be formed as 2P
  • the first exhaust pressure When P 1 is 2P the second exhaust pressure P 2 may be formed as P.
  • first source gas supply module 310 and the second source gas supply module 320 may include a third pumping module 630 and a fourth pumping module 640 for discharging the remaining source gas g s .
  • a third pumping module 630 and a fourth pumping module 640 for discharging the remaining source gas g s .
  • the atomic layer deposition apparatus 1 by converting the reaction gas (g r ) or source gas (g s ) into a plasma, the reaction rate between the reaction gas (g r ) and the source gas (g s ) Can improve.
  • a configuration for plasmalizing the reaction gas g r or the source gas g s will be described in detail.
  • FIG. 5 is a view illustrating an interior of a gas supply pipe of the atomic layer deposition apparatus of FIG. 1.
  • a voltage is supplied to the reaction gas g r flowing toward the gas supply unit, for example, the first reaction gas supply module 210.
  • the gas supply unit for example, the first reaction gas supply module 210.
  • the plasma electrode units 526 and 527 may be provided at a position adjacent to the first reactive gas supply module 210 or in the first reactive gas supply module 210.
  • the plasma electrode portions 526 and 527 may include a first electrode 527 connected to a reaction gas supply pipe 520 formed of a conductive material and a second electrode 526 provided in the reaction gas supply pipe 520. Include.
  • the first electrode 527 is a ground electrode
  • the second electrode 526 is connected to an RF oscillator 700 that provides a high frequency voltage.
  • the second electrode 526 extends in a direction parallel to the flow direction of the reaction gas g r flowing in the reaction gas supply pipe 520.
  • the wire for connecting the second electrode 527 and the RF oscillator 700 may pass through the reaction gas supply pipe 520 in an insulated state with respect to the reaction gas supply pipe 520.
  • the reaction gas flowing in the space between the inner surface of the gas supply pipe 520 facing the second electrode 526 formed in a column shape (g) As r ) is converted into plasma, there is an advantage that the plasma efficiency can be improved.
  • the first electrode 527 is described as being connected to the reaction gas supply pipe 520 formed of a metal material, but the reaction gas supply pipe 520 in which the first electrode 527 is formed of an insulating material is described. It is also possible to form a metal coating portion or a circular cylinder formed on the inner surface of the). In addition, a configuration in which the first electrode 527 is connected to the RF oscillator and the second electrode 526 is formed as a ground electrode is also possible.
  • the configuration in which the plasma electrode portions 526 and 527 are formed in the source gas supply pipe 530 is also possible.
  • FIG. 6 is a view showing an atomic layer deposition method using the atomic layer deposition apparatus of FIG.
  • a substrate mounting step S110 for mounting the substrate S on the substrate transfer unit 100 is performed.
  • Step S120 is performed.
  • reaction gas supply module 210, 220, 230 and the source gas supply module 310, 320 may have the second gas having a vertical supply vector component VD 3 and a second horizontal supply vector component VD 2 .
  • the reaction gas g r and the source gas g s are supplied to the substrate S in the supply direction.
  • the reactive gas supply modules 210, 220, 230, the source gas supply modules 310, 320, and the substrate S for supplying the reactive gas g r and the source gas g s to the substrate S are provided.
  • the second exhaust pressure P 2 of the second exhaust region positioned in the second direction D 2 with respect to the reference of the deposition region may be formed differently.
  • the first exhaust pressure P 1 in the first deposition mode step S120 is greater than the second exhaust pressure P 2 .
  • a second deposition mode step S130 of forming an atomic layer with respect to (S) is performed.
  • the reaction gas supply module 210, 220, 230 and the source gas supply module 310, 320 may include the first gas having a vertical supply vector component VD 3 and a first horizontal supply vector component VD 1 .
  • the reaction gas g r and the source gas g s are supplied to the substrate S in the supply direction.
  • the second exhaust pressure P 1 in the second deposition mode step S130 is greater than the first exhaust pressure P 2 .
  • the first exhaust pressure P 1 and the second exhaust pressure P 2 of the reaction gas supply modules 210, 220, 230 and the source gas supply modules 310, 320 are described as being different from each other.
  • the first exhaust pressure P 1 and the second exhaust pressure P 2 of any one of the gas supply modules of the reactive gas supply module 210, 220, 230 and the source gas supply module 310, 320 may be Although differently formed, different types of gas supply modules may perform exhaust of residual gas without distinguishing between the first exhaust pressure P 1 and the second exhaust pressure P 2 .
  • the substrate S is transferred in the second direction D 1 by a predetermined distance, it is determined whether to finish the deposition (S140), and if the atomic layer deposition process is not finished, the first deposition mode step (S120). If the atomic layer deposition process is completed, the control is terminated.
  • the control of the first end supply passage, the second end supply passage, the first exhaust pressure P 1 and the second exhaust pressure P 2 according to the first deposition mode and the second deposition mode is as follows. Same as
  • the first exhaust pressure P 1 and the second exhaust pressure P 2 are finely adjusted and supplied from the gas supply module.
  • the reactant gas g r and the source gas g s supplied angles can be finely adjusted based on the preset first supply angle ⁇ 1 and the second supply angle ⁇ 2 .
  • FIG. 7 is a view showing an atomic layer deposition apparatus according to another embodiment of the present invention.
  • the present embodiment differs only in the configuration of the pumping module and the exhaust passage, and in other configurations is the same as that of the atomic layer deposition apparatus of FIGS. 1 to 6, and therefore, the following description will focus on the characteristic parts of the present embodiment. do.
  • the first pumping module 650 and the second pumping module 660 of the atomic layer deposition apparatus 1 may include source gases of the reaction gas supply modules 210, 220, and 230. Both the first and second exhaust flow paths of the supply modules 310 and 320 are connected to each other.
  • the atomic layer deposition apparatus 1 includes a first variable valve unit 810 disposed between the first pumping module 650 and the first exhaust passage, the first pumping module 650, and the second exhaust.
  • a second variable valve unit 820 disposed between the flow paths, a second variable valve unit 830 disposed between the second pumping module 660 and the first exhaust flow path, a second pumping module 660, And a variable valve unit including a fourth variable valve unit 840 disposed between the second exhaust flow paths.
  • the exhaust pressure provided by each of the first pumping module 650 and the second pumping module 660 is not variable, and any one of the first pumping module 650 and the second pumping module 660 is pumped.
  • the exhaust pressure of may be greater than the exhaust pressure of the other pumping module.
  • the first pumping module 650 may be formed of a high pressure compressor
  • the second pumping module 660 may be formed of a low pressure compressor.
  • the first variable valve unit 810 and the fourth variable valve unit 840 are opened so that the high pressure first pumping module 650 is connected to the first exhaust flow path.
  • the low pressure second pumping module 660 is connected to the second exhaust flow path.
  • the second variable valve unit 820 and the third variable valve unit 830 are closed to disconnect the low pressure second pumping module 660 and the first exhaust flow path, and the high pressure first pumping module ( 650 and the second exhaust passage are disconnected.
  • the first exhaust pressure P 1 of the first exhaust flow path is greater than the second exhaust pressure P 2 of the second exhaust flow path.
  • the second variable valve unit 820 and the third variable valve unit 830 are opened so that the high pressure first pumping module 650 is connected to the second exhaust flow path.
  • the low pressure second pumping module 660 is connected to the first exhaust passage.
  • the first variable valve unit 820 and the fourth variable valve unit 840 are closed to disconnect the low pressure second pumping module 660 and the second exhaust flow path, and the high pressure first pumping module ( 650 and the first exhaust passage are disconnected.
  • the pumping modules 650 and 660 are operated with the exhaust pressure provided by the pumping modules 650 and 660 fixed, thereby improving the operation reliability of the pumping modules 650 and 660, There is an advantage that can employ the pumping module (650, 660) of the structure.
  • the source gas g s and the reaction in the first exhaust pipe connected to the first exhaust flow path and the second exhaust pipe connected to the second exhaust flow path of the atomic layer deposition apparatus 1 according to the present embodiment.
  • the gas g r is mixed and delivered to the pumping modules 650 and 660.
  • the exhaust efficiency may be reduced by the condensed reactants of the source gas g s and the reaction gas g r , so that the atomic layer deposition apparatus ( 1) includes trap portions 910 and 920 for suppressing condensation of the source gas g s and the reaction gas g r .
  • the trap units 910 and 920 include a first trap unit 910 and a second trap unit 920.
  • the first trap part 910 is disposed between the first pumping module 650 and the first variable valve 810 and the second variable valve 820, and the first variable valve 810 or the second variable valve 820. Restriction of the reaction gas (g r ) and the source gas (g s ) flowing to the first pumping module 650 through the ().
  • the second trap part 920 is disposed between the second pumping module 660 and the third variable valve 830 and the fourth variable valve 840, and the third variable valve 830 or the fourth variable valve ( Condensation of the reactant gas g r and the source gas g s flowing through the 840 to the second pumping module 660 is suppressed.
  • Embodiment according to the present invention relates to an atomic layer deposition apparatus, a manufacturing apparatus applied to the semiconductor industry, etc., there is a repeatability and industrial applicability.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un appareil de dépôt d'une couche atomique et un procédé de dépôt d'une couche atomique utilisant celui-ci. L'appareil de dépôt d'une couche atomique, selon la présente invention, est un appareil pour déposer une couche atomique pour former une couche atomique sur un substrat, et comprend : une unité de transfert de substrat pour installer un substrat sur celle-ci et transférer le substrat dans une première direction et dans une deuxième direction différente de la première direction; une unité de distribution de gaz, disposée au-dessus du substrat transféré par l'unité de transfert de substrat, comprenant un module de distribution de gaz source pour distribuer un gaz source, un module de distribution de gaz réactif pour distribuer un gaz réactif, et un module de distribution de gaz de purge disposé entre le module de distribution de gaz source et le module de distribution de gaz réactif; et une unité de tuyau de distribution de gaz comprenant un tuyau de distribution de gaz source pour raccorder le module de distribution de gaz source et une source de distribution de gaz source, et un tuyau de distribution de gaz réactif raccordant le module de distribution de gaz réactif et une source de distribution de gaz réactif, le module de distribution de gaz source et/ou le module de distribution de gaz réactif pouvant modifier une direction de distribution de gaz par rapport au substrat en fonction d'une direction de transfert de substrat de l'unité de transfert de substrat.
PCT/KR2018/014690 2018-08-17 2018-11-27 Appareil de dépôt de couche atomique et procédé de dépôt de couche atomique utilisant celui-ci WO2020036261A1 (fr)

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