WO2015130138A1 - Structure de dispositif d'alignement et procédé d'alignement - Google Patents

Structure de dispositif d'alignement et procédé d'alignement Download PDF

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Publication number
WO2015130138A1
WO2015130138A1 PCT/KR2015/001956 KR2015001956W WO2015130138A1 WO 2015130138 A1 WO2015130138 A1 WO 2015130138A1 KR 2015001956 W KR2015001956 W KR 2015001956W WO 2015130138 A1 WO2015130138 A1 WO 2015130138A1
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WO
WIPO (PCT)
Prior art keywords
substrate
mask
alignment
support
relative movement
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PCT/KR2015/001956
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English (en)
Korean (ko)
Inventor
조생현
Original Assignee
(주)브이앤아이솔루션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Priority claimed from KR1020140136990A external-priority patent/KR20150101906A/ko
Application filed by (주)브이앤아이솔루션 filed Critical (주)브이앤아이솔루션
Priority to CN201580010595.1A priority Critical patent/CN106062990B/zh
Priority to US15/121,825 priority patent/US20170069844A1/en
Publication of WO2015130138A1 publication Critical patent/WO2015130138A1/fr
Priority to US15/933,969 priority patent/US20180212150A1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the present invention relates to a substrate processing apparatus, and more particularly, to an aligner structure and an alignment method for aligning a substrate and a mask to perform a deposition process on a substrate.
  • Such flat panel displays include liquid crystal displays, plasma display panels, and organic light emitting diodes.
  • organic light emitting display has the following advantages: fast response speed, lower power consumption than conventional liquid crystal display, light weight, ultra thin because no additional back light device is required, and high brightness. It is spotlighted as an element.
  • Such an organic light emitting display uses a principle of sequentially emitting an anode, an organic film, and a cathode on a substrate and emitting light by applying a voltage between the anode and the cathode.
  • an anode a hole injection layer, a hole transfer layer, an emitting layer, an electron transfer layer, an electron injection layer may be formed on a substrate.
  • the cathode the cathode (cathode) is formed sequentially.
  • ITO Indium Tin Oxide
  • an encapsulation film for sealing the organic film or the like is formed on the top to increase the life time of the device.
  • the positive electrode, the negative electrode, the organic film, the encapsulation film is generally formed by vacuum deposition.
  • the vacuum deposition method refers to a method of installing a source for heating and depositing a deposition material in a vacuum chamber, and depositing the deposition material evaporated from the source on the substrate surface.
  • an anode, a cathode, an organic film, and the like having a predetermined pattern are formed by bonding a mask M to a substrate S.
  • F denotes a supporting member for closely contacting the mask M and the substrate S that are aligned by magnetic force or the like.
  • Korean Patent No. 10-0627679 is a conventional aligner structure.
  • the conventional aligner structure has a problem in that fine movement of the substrate S or the mask M is impossible due to the adoption of a mechanical operation method such as a ball screw.
  • the conventional method adopting the mechanical operation method is not easy to precisely align the substrate (S) and the mask (M) is performed by the alignment through several iterations for the alignment of the substrate (S) and the mask (M)
  • the productivity of the display is lowered by increasing the overall process time by increasing the time required.
  • the time required for the alignment of the substrate S and the mask M increases the overall process time, thereby reducing the productivity of the display. Therefore, a faster alignment method for the substrate S and the mask M is required. Do.
  • the present invention provides a first order relative movement between the substrate S and the mask M at a relatively large movement scale and a second order relative between the substrate S and the mask M at a relatively small movement scale. It is an object of the present invention to provide an aligner structure and an alignment method capable of quickly and accurately aligning a substrate and a mask by a combination of movements.
  • an object of the present invention is to provide an aligner structure and an alignment method capable of quickly performing alignment of a substrate (S) and a mask (M).
  • the present invention is an aligner structure for aligning the mask (M) and the substrate (S) before performing a thin film deposition process on the surface of the substrate (S), the substrate (S) and the mask (M)
  • the primary alignment unit 100 for sequentially primary alignment of the substrate S and the mask M by the first relative movement, and the substrate S after the primary alignment by the primary alignment unit 100.
  • a second alignment portion 200 which sequentially aligns the substrate S and the mask M sequentially by the second relative movement of the mask M, and the movement scale of the second relative movement is
  • the aligner structure is characterized in that it is smaller than the moving scale of the first relative movement.
  • the primary alignment portion 100 and the secondary alignment portion 200 are coupled to a mask support portion 310 supporting the mask M to move the mask support portion 310 to the mask support portion with respect to the substrate S.
  • FIG. The first relative movement and the second relative movement of the mask M supported by the 310 may be configured to be performed.
  • the primary aligning unit 100 and the secondary aligning unit 200 are coupled to the substrate supporting unit 320 supporting the substrate S to move the substrate supporting unit 320 so as to move the substrate supporting unit with respect to the mask M ( It may be configured to perform the first relative movement and the second relative movement of the substrate (S) supported on 320.
  • the secondary alignment portion 100 is coupled to a mask support portion 310 that supports the mask M, and moves the mask support portion 310 to support the mask M supported by the mask support portion 310 with respect to the substrate S.
  • the second relative movement of the ()), the primary alignment portion 220 is coupled to the substrate support portion 310 for supporting the substrate (S) to move the substrate support portion 320 to the substrate (M) It may be configured to perform a first relative movement of the substrate (S) supported by the support 320.
  • the primary alignment part 100 is coupled to a mask support part 310 that supports the mask M, and moves the mask support part 310 to support the mask S 310 supported by the mask support part 310 with respect to the substrate S.
  • FIG. The first relative movement of the ()), the secondary alignment portion 220 is coupled to the substrate support portion 310 for supporting the substrate (S) to move the substrate support portion 320 to the substrate (M) It may be configured to perform a second relative movement of the substrate (S) supported by the support 320.
  • the movement range of the first relative movement is 5 ⁇ m to 10 ⁇ m
  • the movement range of the second relative movement is 10 nm to 5 ⁇ m.
  • the primary alignment unit 100 may be linearly driven by any one of a ball screw combination, a rack and pinion combination, and a belt and pulley combination, and the secondary alignment unit 200 may be linearly driven by a piezoelectric element. .
  • the present invention also provides an alignment method for aligning the mask (M) and the substrate (S) before performing a thin film deposition process on the surface of the substrate (S), the adhesion process for bringing the substrate S and the mask (M) in close contact
  • An alignment method characterized in that an alignment process for a substrate (S) and a mask (M) is performed simultaneously.
  • the adhesion process for closely contacting the substrate S and the mask M is first performed, and if the relative distance between the substrate S and the mask M becomes a preset value G, the adhesion process and alignment process are performed. Can be done at the same time.
  • the present invention is also an alignment method for aligning the mask M and the substrate S before performing a thin film deposition process on the surface of the substrate S.
  • the alignment of the substrate S and the mask M is performed.
  • the alignment process, the adhesion process of closely contacting the substrate S and the mask M after the alignment process, and the error between the substrate S and the mask M after the adhesion process is set in a predetermined tolerance range E 1.
  • the alignment If the error measured in the alignment process, whether the alignment is within the tolerance is greater than the tolerance range (E 1 ), after separating the substrate (S) and the mask (M), the alignment And a subsequent alignment process of performing the process to the alignment measurement measurement again, wherein the subsequent alignment process includes an error of which the error measured in the alignment measurement process is larger than the tolerance range E 1 and is set in advance. It is smaller than the area (e 2) the substrate (S) and e It discloses an alignment method wherein the size contains the second alignment step of (M) performs the alignment of the substrate (S) and the mask (M) in a close contact state.
  • the auxiliary alignment process is preferably performed by moving the substrate S and the mask M relative to each other by a piezoelectric element.
  • the alignment process and the adhesion process may be performed at the same time.
  • the adhesion process for closely contacting the substrate S and the mask M is first performed, and if the relative distance between the substrate S and the mask M becomes a preset value G, the adhesion process and alignment process are performed. Can be done at the same time.
  • the aligner structure according to the present invention completes the first relative movement between the substrate S and the mask M at a relatively large movement scale and then moves the primary relative movement between the substrate S and the mask M at a relatively small movement scale. Fast and precise alignment of the substrate and mask is possible by performing
  • the alignment process is performed in a state in which the gap between the substrate S and the mask M is fixed. Compared to the prior art, process execution time can be minimized.
  • the substrate S and the mask M may be in close contact with each other according to the measurement result. As the alignment of the substrate S and the mask M is performed in the state, the alignment process may be performed more quickly and accurately.
  • 1 is a cross-sectional view showing a state in which the substrate and the mask in close contact in the evaporator for performing the deposition process
  • FIG. 2 is a partial plan view illustrating an alignment process of a substrate and a mask
  • FIG. 3 is a cross-sectional view showing an aligner structure according to the first embodiment of the present invention.
  • FIG. 4 is a partial plan view illustrating the primary aligner unit in FIG. 3;
  • FIG. 5 is a partial side view illustrating the secondary aligner unit in FIG. 3;
  • FIG. 6 is a cross-sectional view showing an aligner structure according to a second embodiment of the present invention.
  • FIG. 7 is a cross-sectional view showing an aligner structure according to a third embodiment of the present invention.
  • FIG. 8 is a plan view showing an aligner structure according to a fourth embodiment of the present invention.
  • FIG. 9 is a partial cross-sectional view showing a substrate and a mask for performing the substrate aligner method according to the present invention.
  • 10 is a partial plan view showing alignment errors of a substrate and a mask
  • FIG. 11 is a cross-sectional view of an embodiment of a distance detector for detecting a gap between a substrate S and a mask M.
  • the aligner structure according to the present invention is an aligner structure for aligning the mask M and the substrate S before performing a thin film deposition process on the surface of the substrate S as shown in FIGS. 3 to 7.
  • a second alignment part 200 sequentially aligning the substrate S and the mask M sequentially by the second relative movement of the substrate S and the mask M after the first alignment.
  • the aligner structure according to the present invention may be installed in a chamber installed in a clean room in which a cleaning environment is formed or in a chamber that forms an inner space separate from the outside of the evaporator illustrated in FIG. 1.
  • the aligner structure according to the present invention may be installed in the deposition apparatus shown in FIG. 1 and may be configured to align the mask M and the substrate S before performing the increase process.
  • the reason for performing by the primary aligning unit 100 and the secondary aligning unit 200 is that the primary movement during the relative movement of the substrate S and the mask M is performed.
  • the second alignment unit 200 performs fine movement by the second movement of the relatively small scale, thereby aligning the substrate S and the mask M. This is to enable the phosphorus to be carried out quickly and precisely.
  • the movement scale of the second relative movement is preferably smaller than the movement scale of the first relative movement.
  • the movement range of the first relative movement is 5 ⁇ m to 10 ⁇ m
  • the movement range of the second relative movement is 10 nm. It is preferable that it is-5 micrometers.
  • the substrate S and the mask M are supported by the substrate support 320 and the mask support 310.
  • the substrate support part 320 may support the edge of the substrate S, and the plurality of support members 321 may be supported at a plurality of points at the edge of the substrate S in consideration of the size center of gravity of the substrate S. It is preferable to include them.
  • the plurality of supporting members 321 may be installed to be shangdong by means of shanghai east (not shown) in consideration of the bonding with the mask (M) as a component to support at a plurality of points at the edge of the substrate (S). .
  • the mask supporting part 310 supports the edge of the mask M, and a plurality of supporting members 311 supporting the plurality of points at the edge of the mask M in consideration of the size center of gravity of the mask M. It is preferable to include them.
  • the plurality of supporting members 311 may be installed to be shangdong by means of shanghai east (not shown) in consideration of the adhesion to the substrate (S) as a component to support at a plurality of points at the edge of the mask (M). .
  • the primary alignment unit 100 is a component that sequentially aligns the substrate S and the mask M sequentially by the first relative movement of the substrate S and the mask M.
  • the primary alignment unit 100 moves relative to the substrate S and the mask M, for example, moves the other one in a state in which one of the substrate S and the mask M is fixed, or the substrate S is fixed. ) And various methods are possible, such as performing alignment of the substrate S and the mask M while both the mask and the mask M are moved.
  • the primary alignment unit 100 may be formed by any one of a ball screw combination, a rack and pinion combination, and a belt and pulley combination in consideration of a relatively large scale movement in the movement of the substrate S and the mask M. Can be linearly driven.
  • the primary alignment unit 100 may include a rotary motor 110, a screw member 130 rotated by the rotary motor 110, and a screw member (as shown in FIG. 3). 130 is coupled to the linear movement member 120 is moved by the rotation of the screw member 130, the linear movement member 120 is coupled to the substrate (S) or mask by the movement of the linear movement member 120 It may include a moving member 140 for moving (M).
  • the primary alignment unit 100 may rotate the motor 110 and the screw member 130 to correct the X-axis deviation, the Y-axis deviation, and the ⁇ deviation (mask and substrate misalignment) based on the rectangular substrate S.
  • the linear moving member 120 and the moving member 140 may be installed in an appropriate number.
  • the rotary motor 110, the screw member 130, the linear moving member 120, and the moving member 140 constituting the primary alignment unit 100 may have a rectangular mask ( The case where four were installed corresponding to four sides of M) was shown.
  • the movable member 140 may be indirectly coupled to the mask support 310 by supporting the secondary alignment unit 200 supporting the movable block 312 of the mask support 310.
  • the moving member 140 is directly or indirectly coupled to the mask supporter 310 according to the moving object of the primary alignment unit 100, or indirectly or indirectly with the substrate supporter 320 as shown in FIGS. 6 and 7.
  • Various embodiments are possible, such as being directly coupled.
  • the secondary alignment unit 200 sequentially moves the substrate S and the mask M by the second relative movement of the substrate S and the mask M after the primary alignment by the primary alignment unit 100. Secondary alignment component.
  • the secondary alignment unit 200 moves relative to the substrate S and the mask M, for example, moves the other one in a state in which one of the substrate S and the mask M is fixed, or the substrate S ) And various methods are possible, such as performing alignment of the substrate S and the mask M while both the mask and the mask M are moved.
  • the secondary alignment unit 200 is intended for the movement of a relatively small scale, and any driving method can be adopted as long as the driving method is capable of fine movement in the range of 10 nm to 5 ⁇ m. This is preferred.
  • the piezoelectric element can be precisely removed in the range of 10nm ⁇ 5 ⁇ m bar can be an optimal method for correcting the minute deviation between the substrate (S) and the mask (M).
  • the secondary alignment unit 200 includes a linear driving unit 210 for generating a linear driving force by the piezoelectric element as shown in FIGS. 3 and 4, and a linear driving force of the linear driving unit 210. It may include a linear moving member 220 which is linearly moved by.
  • the secondary alignment unit 200 may correct the X-axis deviation, the Y-axis deviation, and the ⁇ deviation (misalignment between the mask and the substrate) based on the rectangular substrate S, and the linear driving unit 210 and the linear moving member 220. ) Can be installed in any suitable number.
  • the rotary motor 110, the screw member 130, the linear moving member 120, and the moving member 140 constituting the primary alignment unit 100 may have a rectangular mask ( The case where it installed corresponding to four sides of M) is shown.
  • linear moving member 220 may be directly coupled to the mask support 310 such as supporting the moving block 312 of the mask support 310.
  • the linear moving member 220 is directly or indirectly coupled to the mask support part 310 as shown in FIGS. 6 and 7 or the substrate support part 320 according to the moving object of the secondary alignment part 200.
  • Various embodiments are possible, such as combined with indirect or direct.
  • the configuration of the primary alignment unit 100 and the secondary alignment unit 200 as described above is possible in various embodiments depending on the position and coupling structure.
  • the first alignment unit 100 and the first alignment unit 100 that drive the first relative movement may be used. It may include a secondary alignment unit 100 for driving the second relative movement after one relative movement.
  • the primary alignment unit 100 is coupled to the rotary motor 110, the screw member 130 rotated by the rotary motor 110, and the screw member 130, and is linearly rotated by the screw member 130. It may include a linear moving member 120 to be moved.
  • the screw member 130 may be rotatably supported by one or more brackets for stable installation and rotation.
  • the secondary alignment unit 200 is coupled to the linear moving member 120 to move linearly with the primary alignment unit 100 and the moving block 312 is connected to the support member for supporting the substrate (S) or mask (M) It may include a fine linear moving member for linear movement.
  • the fine linear moving member of the secondary alignment unit 200 is preferably composed of a piezo actuator (ie, a linear driving module using a piezoelectric element).
  • the moving block 312 is connected to the supporting member supporting the substrate S or the mask M, and the first relative movement and the second relative movement of the primary alignment unit 100 and the secondary alignment unit 200 are performed. Any configuration can be used as long as it can be transferred to the substrate S or the mask M. FIG.
  • the secondary alignment unit 200 is coupled to the moving block 312 so that the stable first relative movement and the second relative movement, the second alignment unit 200 is at least one first guide rail installed in the chamber, etc.
  • a first support block 332 installed to be movable along the 334 and linearly moved by the micro linear moving member, and at least one agent supported on the first support block 332 and installed on the first support block 332.
  • the second guide block 333 may be installed to be movable along the second guide rail 333 and support the moving block 312.
  • first support block 332 and the second support block 331 it is possible to stably support the moving block 312, the first relative movement and the second relative movement can be made smoothly.
  • the primary alignment unit 100 and the secondary alignment unit 200 having the above-described configuration may correct the X-axis deviation, the Y-axis deviation, and the ⁇ deviation (wrong mask and substrate) based on the rectangular substrate S. It can be installed in an appropriate number, such as three.
  • the primary alignment unit 100 and the secondary alignment unit 200 may have various embodiments depending on the coupling structure and the installation position in the relative movement of the substrate S and the mask M.
  • FIG. 1 the primary alignment unit 100 and the secondary alignment unit 200 may have various embodiments depending on the coupling structure and the installation position in the relative movement of the substrate S and the mask M.
  • the aligner structure according to the first exemplary embodiment of the present invention has a primary alignment portion 100 and a secondary alignment portion 200 provided on a mask support portion 310 that supports the mask M.
  • FIG. The first and second relative movements of the mask M supported by the mask supporter 310 may be performed by moving the mask supporter 310 to move the mask supporter 310.
  • the primary alignment unit 100 and the secondary alignment unit 200 support the substrate S. As shown in FIG. It may be coupled to the substrate support 320 to move the substrate support 320 to perform the first relative movement and the second relative movement of the substrate (S) supported on the substrate support 320 with respect to the mask (M). have.
  • the aligner structure according to the third exemplary embodiment of the present invention is coupled to the mask support part 310 that supports the mask M, thereby forming the mask support part 310.
  • the primary alignment unit 220 is connected to the substrate supporter 310 that supports the substrate S. It may be coupled to move the substrate support 320 to perform a first relative movement of the substrate S supported by the substrate support 320 with respect to the mask (M).
  • the primary alignment unit 100 is coupled to the mask support unit 310 that supports the mask M to form the mask support unit 310. It moves to perform the first relative movement of the mask (M) supported on the mask support portion 310 with respect to the substrate (S), the secondary alignment portion 220 to the substrate support portion 310 for supporting the substrate (S) It may be coupled to move the substrate support 320 to perform a second relative movement of the substrate (S) supported on the substrate support 320 with respect to the mask (M).
  • the aligner structure according to the present invention has the mask M on the substrate S.
  • the close contact with respect to the upper side from the lower side it can be applied to the case where the mask (M) is in close contact with the horizontal direction in a state where the substrate (S) is disposed vertically.
  • the aligner structure when the process is performed with the substrate processing surface facing downward, when the process is performed with the substrate processing surface facing upward, the process is performed with the substrate processing surface perpendicular to the horizontal line.
  • the process is performed with the substrate processing surface perpendicular to the horizontal line. The case may apply to both.
  • Reference numeral 340 not described in FIGS. 3, 6, and 7 denotes a camera for recognizing marks m1 and m2 formed on each of the substrate S and the mask M
  • 300 denotes a substrate S and a mask
  • 332 indicates that the mask M is in close contact with the substrate S. After rotating the support means 300 for thin film deposition, etc. to indicate a rotating motor.
  • the support means 300 may be a susceptor installed in a carrier or a vacuum chamber which is moved together while supporting the substrate S as a component for supporting the back surface of the substrate S on which the mask M is in close contact. have.
  • At least one damping member 120 may be installed to prevent excessive impact on the substrate S when the mask M is in close contact with the substrate S, as shown in FIG. 11. .
  • Damping member 120 may be used a flexible material such as rubber.
  • the support means 300 is a plurality of sensing sensors 150 for sensing the alignment between the substrate (S) and the mask (M), that is, the distance between the substrate (S) and the mask (M) during alignment. Can be installed as
  • the sensor 150 is an ultrasonic sensor for measuring a distance and the like, and detects the distance between the substrate S and the mask M so that a controller (not shown) of the device contacts the substrate S and the mask M. FIG. It is possible to determine whether or not there is an alignable distance.
  • the sensor 150 may transmit a signal to the controller of the device in a wired manner by a signal transmission member 130 or the like by wireless communication or separately installed in transmitting a signal to the controller of the device.
  • the senor 150 is installed at a plurality of points to calculate the parallelism between the substrate (S) and the mask (M) and by the parallelism control device (not shown) described later between the substrate (S) and the mask (M) It can be used to control the degree of parallelism.
  • the combination of the primary alignment unit 100 and the secondary alignment unit 200 may be various embodiments depending on the installation position and the coupling structure thereof.
  • the present invention provides a quick alignment method for the substrate (S) and the mask (M).
  • the alignment method according to the present invention is characterized in that the adhesion process for closely contacting the substrate S and the mask M and the alignment process for the substrate S and the mask M are simultaneously performed.
  • the adhesion process of closely contacting the substrate S and the mask M is first performed, and as shown in FIG. 9, the relative distance between the substrate S and the mask M is previously determined.
  • the set value (G) it is preferable to perform the close contact and the align process at the same time.
  • a distance sensor 150 for measuring a distance between the substrate S and the mask M may be installed in the chamber.
  • the distance sensor is a configuration for measuring the distance between the substrate (S) and the mask (M) may be any configuration as long as the sensor that can measure the distance, such as the ultrasonic sensor 150.
  • the process execution time can be minimized as compared with the prior art of performing the alignment process in a state where the gap between the substrate S and the mask M is fixed. have.
  • the gap between the substrate S and the mask M becomes smaller when the alignment process is performed. As it is performed in, the alignment process can be performed more accurately.
  • the alignment method according to the present invention as described above can be applied regardless of the alignment structure for the alignment of the substrate (S) and the mask (M).
  • the alignment process of the substrate S and the mask M is performed, the adhesion between the substrate S and the mask M, and a preset tolerance Performing alignment measurement within the range (E 1 ) (refer to FIG. 10), if the measurement result error of alignment is larger than the tolerance range (E 1 ), after separating again, it is common to perform alignment process and alignment determination again. to be.
  • the present invention provides a substrate (S) and a mask (M) when the measured error is greater than the tolerance range (E 1 ) but smaller than the preset tolerance range (E 2 ). Without the separation, that is, the auxiliary alignment process for performing alignment of the substrate S and the mask M in a state in which the substrate S and the mask M are in close contact may be performed.
  • the substrate S and the mask M are separated again, and then the alignment process and alignment measurement are performed again. .
  • a linear driving device capable of driving a fine linear movement in consideration of the minute relative linear movement between the substrate S and the mask M is preferable.
  • the linear driving device capable of driving a fine linear movement may be configured such as the piezo actuator described above.
  • the substrate S and the mask M in close contact are chucked by a permanent magnet or the like.
  • the alignment process of the substrate S and the mask M is performed as described above, the substrate S and the mask M are aligned while the substrate S and the mask M are in close contact with each other according to the measurement result. As a result, the alignment process can be performed more quickly and accurately.
  • the alignment method according to the present invention as described above can be applied regardless of the alignment structure for the alignment of the substrate (S) and the mask (M).
  • the substrate supporting part for measuring the parallelism between the substrate S and the mask M using the plurality of distance sensors 150 described above and supporting the substrate S and the mask M by the parallelism adjusting device By moving at least one of the 320 and the mask support part 310 up and down, the substrate S and the mask M may be maintained in parallel with each other.
  • the parallelism adjusting device is configured to move at least one of the substrate support part 320 and the mask support part 310 which support the substrate S and the mask M, respectively, so that the substrate S and the mask M are moved. It will control the state parallel to each other.
  • the substrate support 320 and the mask support 310 include a plurality of support members 321 and 311 for supporting a plurality of points of the edges in the horizontal state of the substrate S and the mask M, respectively.
  • the substrate S and the mask M are controlled to be parallel to each other by varying the movement of the support members 321 and 311 of some of the plurality of points.
  • the parallelism adjusting device may be installed in combination with the primary alignment unit 100 and the secondary alignment unit 200, and the primary alignment unit 100 and the secondary alignment unit 200 are installed in the mask support unit 310. If so, it may be installed on the substrate support 320 to prevent interference.
  • the parallelism adjusting device may be used as long as it is configured for linear movement in the vertical direction such as a screw jack installed in the vacuum chamber in consideration of the lifting operation in the vertical direction.
  • the aligner structure alignment method according to the present invention has been described as an embodiment using an apparatus for performing a thin film deposition process
  • the apparatus for performing a process by bringing a mask into close contact with a substrate is a device requiring alignment of the substrate and the mask. All are applicable.

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  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention a pour objet de produire une structure de dispositif d'alignement capable d'aligner rapidement et avec précision un substrat (S) et un masque (M) en effectuant un déplacement relatif primaire entre le substrat (S) et le masque (M) avec une échelle de déplacement relativement petite après avoir terminé le déplacement relatif primaire entre le substrat (S) et le masque (M) avec une échelle de déplacement relativement grande. La structure de dispositif d'alignement selon la présente invention aligne le masque (M) et le substrat (S) avant d'effectuer un processus de dépôt d'un film mince sur la surface du substrat (S). La structure de dispositif d'alignement comprend : une partie d'alignement primaire (100) destinée à effectuer un alignement séquentiel et primaire du substrat (S) et du masque (M) par le déplacement relatif primaire entre le substrat (S) et le masque (M) ; et une partie d'alignement secondaire (200) destinée à effectuer un alignement séquentiel et secondaire du substrat (S) et du masque (M) par le déplacement relatif secondaire entre le substrat (S) et le masque (M) après l'alignement primaire par la partie d'alignement primaire (100). L'échelle de déplacement du déplacement relatif secondaire est plus petite que l'échelle de déplacement du déplacement relatif primaire, de sorte que le substrat (S) et le masque (M) peuvent être alignés rapidement et avec précision en effectuant le déplacement relatif primaire entre le substrat (S) et le masque (M) avec une échelle de déplacement relativement petite après avoir terminé le déplacement relatif primaire entre le substrat (S) et le masque (M) avec une échelle de déplacement relativement grande.
PCT/KR2015/001956 2014-02-27 2015-02-27 Structure de dispositif d'alignement et procédé d'alignement WO2015130138A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201580010595.1A CN106062990B (zh) 2014-02-27 2015-02-27 对准器结构及对准方法
US15/121,825 US20170069844A1 (en) 2014-02-27 2015-02-27 Aligner structure and alignment method
US15/933,969 US20180212150A1 (en) 2014-02-27 2018-03-23 Aligner structure and alignment method

Applications Claiming Priority (6)

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