WO2015142131A1 - Appareil de dépôt multi-type et procédé de formation de film mince l'utilisant - Google Patents

Appareil de dépôt multi-type et procédé de formation de film mince l'utilisant Download PDF

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WO2015142131A1
WO2015142131A1 PCT/KR2015/002783 KR2015002783W WO2015142131A1 WO 2015142131 A1 WO2015142131 A1 WO 2015142131A1 KR 2015002783 W KR2015002783 W KR 2015002783W WO 2015142131 A1 WO2015142131 A1 WO 2015142131A1
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process chamber
substrate
chamber
atomic layer
layer deposition
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PCT/KR2015/002783
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English (en)
Korean (ko)
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김운태
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김운태
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32788—Means for moving the material to be treated for extracting the material from the process chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools

Definitions

  • the present invention relates to a multi-type deposition apparatus and a method for forming a thin film using the same.
  • ALD atomic layer deposition
  • a process chamber and a process chamber for an atomic layer deposition process capable of separating and combining upper and lower portions are possible.
  • the present invention relates to a multi-type atomic layer deposition apparatus and method in which a plurality of process modules composed of vacuum chambers for maintaining a vacuum space in a stacked form are arranged in a stacked form.
  • a method of depositing a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or glass includes physical vapor deposition (PVD) using physical collision, such as sputtering, and chemical reaction using a chemical reaction.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • This atomic layer deposition method is similar to the general chemical vapor deposition method in that it uses a chemical reaction between gas molecules. However, unlike conventional CVD in which a plurality of gas molecules are simultaneously injected into a process chamber to deposit a reaction product generated on a substrate, an atomic layer deposition method is heated by injecting a gas containing one source material into the process chamber. The difference is that the product is deposited by chemical reaction between the source materials at the substrate surface by chemisorbing to the substrate and then injecting a gas containing another source material into the process chamber.
  • the atomic layer deposition method described above is a thin film bag for replacing a conventional glass bag in an AMOLED display, a barrier film of a flexible substrate, a buffer layer for photovoltaics, and a ferroelectric for semiconductors (high).
  • -k can be used to form high dielectric materials for capacitors or aluminum (Al), copper (Cu) wiring diffusion barriers (TiN, TaN, etc.) and the like.
  • the atomic layer deposition method is a process in which the sheet-fed, batch and substrates used in plasma enhanced chemical vapor deposition (PECVD) are transported to the bottom of the small reactor, or the method is carried out by the scan reactor to transport the substrate. have.
  • PECVD plasma enhanced chemical vapor deposition
  • the single sheet method is processed after the input of one substrate, and consists of a moving susceptor for input / export and heating of the substrate, a diffuser (mainstream of the showerhead type) and an exhaust part for process gas input and diffusion.
  • the chamber is very thick to prevent deformation of the process chamber and the periphery according to the external atmospheric pressure during vacuum formation, and the internal volume is required when constructing the equipment for the large-area substrate due to the need for a gate valve for loading / exporting the substrate and distinguishing the process area.
  • the batch type process which processes several substrates at the same time has a large volume of atomic layer deposition equipment, so that the raw material precursors and the reaction precursors require a lot of maintenance costs and low productivity. At the same time, the process is performed.
  • this batch type is partially applied to the solar cell process, there is a problem that simultaneous film formation is performed not only on the front side of the substrate but also on the back side, the uniformity and reproducibility of the thin film on a plurality of substrates, and one process compartment according to the unclear classification of the process area. Even when contamination occurs, there is a problem in that the entire ultra large chamber needs to be cleaned.
  • the scanning reactor method is a method in which a plurality of small reactors corresponding to the length of one side of the substrate in the vacuum chamber are disposed so that the substrate or the small reactor is reciprocated to form a film. Difficulties in controlling the gas flow of the reactor are known to have low productivity due to particle issues and long deposition times.
  • a plurality of process modules each of which has a separate vacuum forming and pressure control vacuum chamber as a basic unit, are disposed in the form of a plurality of process chambers that can separate and combine the upper and lower parts, and each unit process.
  • the process chamber and the vacuum chamber of the module are implemented to have only the minimum space for the optimal process, and the atomic layer deposition process can be performed simultaneously in the process chambers in the multiple process modules, thereby reducing the amount of raw material precursors and reaction precursors.
  • a multi-atomic layer deposition apparatus and method in which an atomic layer deposition target substrate or mask is in close contact with an upper process chamber or a lower process chamber in an optimized process chamber can prevent film formation on the back side of a substrate and simultaneously form two substrates.
  • the present invention described above is a multi-type atomic layer deposition apparatus, wherein a process module having a process chamber and a vacuum chamber as a minimum unit has an upper process chamber and a lower process chamber, and is loaded or unloaded when a substrate to be subjected to an atomic layer deposition process is formed.
  • the process chamber is separated from the upper process chamber and the lower process chamber, the process chamber for combining the upper process chamber and the lower process chamber to form a sealed reaction space during the deposition process on the substrate, at least one or more of the process
  • At least two vacuum chambers which support the chambers in a vertically stacked form and maintain or vacuum the space of the process chamber are included.
  • the upper process chamber is fixed to the vacuum chamber
  • the lower process chamber is characterized in that it is coupled to or separated from the upper process chamber by moving up and down in the vacuum chamber.
  • the upper process chamber may include a gas supply unit that supplies a process gas or purge gas to the sealed reaction space on one side of the upper process chamber, and exhausts the gas supplied to the sealed reaction space. A part is provided on the other side of the upper process chamber.
  • the gas supply unit characterized in that formed in the outer or central portion on the side or the upper surface of the upper process chamber.
  • an electrode for plasma generation is formed on the lower surface of the upper process chamber.
  • the electrode is characterized in that the coupling and detachment with the insulator and the power inlet contact portion of the upper process chamber by the detachable device of the upper process chamber.
  • an electrode for generating plasma may be formed at an introduction portion of the gas supply unit through which the process gas or the purge gas is introduced into the closed reaction space.
  • the electrode may be surrounded by an insulator so as to be insulated from the upper process chamber.
  • the gas supply unit may be formed as a diffusion space or a showerhead diffuser for uniform gas flow in the side or central portion of the upper process chamber, so that the process gas may be perpendicular or horizontal to the substrate in the sealed reaction space. It characterized in that the injection of the purge gas.
  • the vacuum chamber is characterized in that it comprises a guide unit for supporting or carrying in / carrying out by stacking the process chamber in the inner space of the vacuum chamber.
  • the vacuum chamber may include fixing means for fixing the upper process chamber and transfer means for moving the lower process chamber up and down.
  • the present invention is a stacked atomic layer deposition method, the step of loading a substrate and a mask in the process chamber, and when the substrate and mask is loaded, the upper process chamber and the lower process chamber of the process chamber is combined and sealed reaction Forming a space, and performing an atomic layer deposition process on the substrate in a closed reaction space.
  • the stacked atomic layer deposition method is characterized in that when the atomic layer deposition process is completed, the upper process chamber and the lower process chamber is separated, the substrate is unloaded.
  • the atomic layer deposition process is characterized in that carried out simultaneously in the process chamber in the two or more process modules.
  • the atomic layer deposition process is characterized in that performed separately in the process chamber for each vacuum chamber unit in the two or more process modules.
  • the upper process chamber is fixed to the vacuum chamber
  • the lower process chamber is characterized in that it is coupled to or separated from the upper process chamber by moving up and down by a transfer means provided in the vacuum chamber.
  • the performing of the atomic layer deposition process may include supplying a raw material precursor to the substrate in the reaction space through a gas supply part formed at one upper surface of the process chamber, and adsorbing the raw material precursor onto the substrate. And exhausting the raw material precursor that has not been adsorbed onto the substrate by supplying purge gas to the substrate through the gas supply unit, and supplying the reaction precursor to the substrate through the gas supply unit after exhausting the raw material precursor.
  • At least one of the raw material precursor, the reaction precursor, the purge gas is characterized in that the supply or exhaust through the shared gas pipe.
  • At least one of the raw material precursor, the reaction precursor, and the purge gas may be supplied through a gas supply part formed as a diffusion space or a shower head diffuser for uniform gas flow in the side or the center of the upper process chamber, It is characterized in that the injection in the vertical or horizontal direction to the substrate.
  • reaction precursor when supplied to the substrate, generating a plasma in the lower surface of the upper process chamber corresponding to the substrate or the inlet connected to the reaction space, and chemical reaction of the reaction precursor and the raw material precursor using the plasma Forming an atomic layer thin film through the reaction is characterized in that it further comprises.
  • a process module having one or more process chambers housed inside at least two or more stacked vacuum chambers is independently an atomic layer in the process chambers housed in each vacuum chamber.
  • the combination of the optimized process module can be performed simultaneously in each process chamber has the advantage that can significantly improve the productivity.
  • the volume optimization in the process chamber reduces the adsorption time of the precursor, the reaction time of the precursor and the purge time, thereby improving productivity, and increasing the precursor, reaction precursor, and purge.
  • reducing the consumption of gas has the advantage of reducing the cost of the atomic layer deposition process.
  • the separate external vacuum chamber configuration can simplify the process chamber and reduce the weight, thereby reducing the maintenance cost of the atomic layer deposition equipment and increasing the convenience of maintenance.
  • the atomic layer deposition target substrate in the optimized process chamber is in close contact with the upper process chamber or the lower process chamber has the advantage of preventing the film deposition on the back of the substrate.
  • FIG. 1 is a block diagram of an atomic layer deposition apparatus according to an embodiment of the present invention
  • FIG. 2 is a three-dimensional perspective view of an atomic layer deposition apparatus according to an embodiment of the present invention
  • FIG. 3 is a cross-sectional structure of an atomic layer deposition equipment according to an embodiment of the present invention, individual transfer and alignment device or simultaneous transfer and alignment device configuration diagram
  • FIG. 4 is a three-dimensional perspective view of a process chamber according to an embodiment of the present invention.
  • FIG. 5 is a detailed cross-sectional structural view of a process chamber according to an embodiment of the present invention.
  • FIG. 6 is a schematic configuration diagram of a cross-sectional structure of a process chamber according to an embodiment of the present invention in which a process gas crosses or moves on a substrate, and a plasma process is possible;
  • FIG. 7 is a schematic configuration diagram of a process chamber and purge gas and an exhaust part as a cross-sectional structure of a process chamber according to an exemplary embodiment of the present invention, and a multi-part deposition process using plasma;
  • FIG. 7 is a schematic configuration diagram of a process chamber and purge gas and an exhaust part as a cross-sectional structure of a process chamber according to an exemplary embodiment of the present invention, and a multi-part deposition process using plasma;
  • FIG. 8 is a cross-sectional configuration diagram of a process chamber according to an embodiment of the present invention.
  • the process module 1300 of the atomic layer deposition apparatus 1000 includes a plurality of vacuum chambers 1100 and the vacuum chamber ( At least one process chamber 1200 in 1100 may be included.
  • the process module 1300 is a heterogeneous thin film deposition, such as A or B, or each of the unit process modules 1300, each of which can be individually configured to control pressure and atmosphere, or have different processes such as ALD and CVD having different deposition pressures and deposition rates. Applicability is also easy to optimize the process of various combinations, and it is possible to maximize the use efficiency of the device is possible by the maintenance per unit process module (1300).
  • the process chamber 1200 is implemented as a chamber capable of performing an atomic layer deposition process on a substrate, each having an independent space, and at least one or more stacked in a vertical direction to form an external vacuum chamber 1100. Is accommodated in.
  • the process chamber 1200 is moved up and down by the upper process chamber 1210 and the transfer unit provided in the vacuum chamber 1100 when the position is fixed in the vacuum chamber 1100 is coupled to the upper process chamber 1210 or It may be composed of a separate lower process chamber 1220.
  • the process chamber 1200 is configured to be separated or combined into the upper process chamber 1210 and the lower process chamber 1220 as described above to ensure only the space for the optimal atomic layer deposition process to ensure the volume of the atomic layer deposition apparatus It can be designed to minimize the.
  • the process chamber 1200 may enter and exit the vacuum chamber 1100 in conjunction with the guide portion 1204 installed on the upper or side surfaces of the vacuum chamber 1100, and may be introduced into a reference position in the vacuum chamber 1100. It is possible to fix by adjusting the guide portion 1204 in the state.
  • the vacuum chamber 1100 has a multi-stage support portion 1202, a guide portion 1204, and the like, in which at least one or more process chambers can be loaded in a vertical direction, and maintains a vacuum state to process chamber 1200. Allow atomic layer deposition process to take place.
  • FIG. 2 is a three-dimensional perspective view showing the configuration of the atomic layer deposition apparatus 1000 and the process module 1300 according to the embodiment of the present invention described above.
  • a unit process module 1300 comprising a process chamber 1200 including an upper process chamber 1210 and a lower process chamber 1220 and at least two vacuum chambers 1100 including at least one process chamber. It is composed of a plurality of process modules 1300 are stacked.
  • a buffer space 1101 is configured to minimize deformation due to the difference.
  • FIG. 4 shows a detailed cross-sectional structure of a process chamber according to an embodiment of the present invention.
  • the lower process chamber 1220 is moved downward to load the substrate 1010 and the mask 1020 into the process chamber 1200, and the process chamber is opened.
  • the substrate 1010 and the mask 1020 are moved to a process chamber in a state in which the lower process chamber 1220 is moved from the upper process chamber 1210 to the lower portion in the vertical direction by the transfer unit 1110.
  • the substrate support 1015 and the mask support 1017 inside the 1200 are sequentially loaded.
  • the upper process chamber 1210 of the process chamber 1200 is fixed to and supported by the vacuum chamber 1100
  • the lower process chamber 1220 is supported by the conveying unit 1110 provided in the vacuum chamber 1100. It can be moved up and down in the vertical direction with respect to 1100.
  • the lower process chamber 1220 is raised by the transfer unit 1110, and the substrate 1010 and As the mask 1020 is sequentially seated in the lower process chamber 1220, the lower process chamber 1220 is finally coupled to the upper process chamber 1210.
  • the loading of the substrate 1010 and the mask 1020 may be performed separately for each process chamber 1200, or may be simultaneously performed in a state in which a plurality of process chambers 1200 in the vacuum chamber 1100 are opened. have.
  • the lower process chamber 1220 is raised by the transfer unit 1110 so that the lower process chamber 1220 becomes the upper process chamber ( By coupling to the 1210, an independent space of the process chamber 1200 may be formed.
  • the required gas is introduced into the process gas supply unit 1212 as the process proceeds, thereby providing a substrate 1010.
  • An atomic layer deposition process may be performed.
  • the lower process chamber 1220 is moved by the transfer unit 1110.
  • An unloading operation is performed in which the upper process chamber 1210 and the lower process chamber 1220 are separated by being lowered and carried out to the outside of the process chamber 1200 with respect to the substrate 1010 on which the process is completed in such an unloading state. You lose.
  • a gas supply part 1212 and an exhaust part 1211 may be formed on an upper surface of the upper process chamber 1210.
  • the gas supply part 1212 may be formed in a round tube shape at the center of both sides of the upper process chamber 1210.
  • the gas supplied from the gas supply unit 1212 is formed on the lower surface of the upper process chamber 1210 including an internal diffusion region to ensure a uniform flow of process gas on the entire surface on the substrate.
  • a mask support 1017 for seating the mask 1020 and a substrate support 1015 for seating the substrate 1010 may be formed on an upper surface of the lower process chamber 1220.
  • the mask 1020 and the substrate 1010 are loaded to be seated on the mask support 1017 and the substrate support 1015, respectively, and then in an independent space in the process chamber generated when the lower process chamber and the upper process chamber are combined. Will be located.
  • the lower surface of the lower process chamber, the height limit of the mask support 1017 and the substrate support 1015, the connection portion 1018 for stable support is formed, and the support hole of the lower process chamber and the Separate sealing parts such as O-rings and bellows can be added between the supports.
  • a mask using an image information processing (vision) apparatus for accurately securing and mounting the substrate 1020 and the mask 1020. It can be configured to enable accurate alignment by configuring the control unit portion that can control the left and right, front and rear, rotation of the unit or the substrate unit.
  • a lower surface of the upper process chamber 1210 constitutes a mask support portion 1017 for seating the mask 1020 and a substrate support portion 1015 for seating the substrate 1010 to form the upper process chamber 1210. Can be formed on the substrate and the substrate of the lower process chamber 1220 at the same time.
  • FIG. 5 is an exploded three-dimensional perspective view of the process chamber according to another embodiment of the present invention, a gas supply unit shows a three-dimensional perspective view of the process chamber formed by the showerhead method.
  • a gas supply part 1212 and an exhaust part 1211 may be formed on an upper surface of the upper process chamber 1210.
  • the gas supply part 1212 may be formed on the upper side or the side of the upper process chamber 1210.
  • a showerhead type diffuser 1312 is formed on a lower surface of the upper process chamber 1210 for spraying a process gas for spraying the gas supplied from the gas supply unit 1212 onto the entire surface of the substrate.
  • a mask support 1017 for seating the mask 1020 and a substrate support 1015 for seating the substrate 1010 may be formed on an upper surface of the lower process chamber 1220.
  • the mask 1020 and the substrate 1010 are loaded to be seated on the mask support 1017 and the substrate support 1015, and then a process generated when the lower process chamber 1220 and the upper process chamber 1210 are combined. It is located in an independent space in the chamber 1200.
  • a connection portion 1018 is formed on the lower surface of the lower process chamber 1220 to fix the mask support 1017 and the substrate support 1015 to the process chamber 1200.
  • FIG. 6 is a cross-sectional structure of a process chamber according to an exemplary embodiment of the present invention and illustrates a schematic configuration in which process gas is injected in a cross flow or moving wave manner on a substrate.
  • an atomic layer includes a raw material precursor, a reaction precursor, and a purge gas from a side surface of the upper process chamber 1210 to the substrate 1010 located inside the process chamber 1200 through the gas supply unit 1212. It supplies sequentially according to the order of the deposition process, and shows a structure to exhaust the process gas or purge gas used in each process through the gas exhaust unit 1211 formed on the other side of the upper process chamber 1210 have.
  • the raw material precursor (TMA, etc.) supplied to the gas supply unit 1212 passes through a solid or wavy region in which one side of the upper process chamber 1210 is easily diffused, and then the one of the substrate 1010. It is uniformly supplied to the side surface, and thus, an adsorption reaction occurs on the upper surface of the substrate 1010 seated in the lower process chamber 1220.
  • the purge gas Ar, O 2 , N 2 , N 2 O, etc.
  • the purge gas Ar, O 2 , N 2 , N 2 O, etc.
  • the purge gas is supplied to the gas supply unit 1212 again to remove all remaining reactive precursors that do not bond with the raw material precursors on the substrate 1010.
  • the atomic layer thin film on the substrate 1010 is formed to have a desired thickness through a repeating process using the above-described four-step process as one cycle.
  • a susceptor function may be performed by providing a heater function to the lower process chamber 1220 to enable temperature control of the substrate 1010.
  • the lower part may be prevented from generating particles due to gas leakage to the outside of the process chamber 1200 due to incomplete coupling of the process chamber 1200.
  • a basic sealing part 1221 and an additional sealing part 1222 may be configured on the outer side of the process chamber 1220, and a surface contact forming part for perfect surface contact between the upper process chamber 1210 and the lower process chamber 1220. It can also be configured additionally.
  • the gas supply unit ( The raw material precursor is supplied through 1212, and the raw material precursor supplied through the gas supply unit 1212 is sprayed onto the substrate 1010 to be subjected to the atomic layer deposition process so that a single molecular layer of the raw material precursor is provided on the substrate 1010.
  • the raw material precursor is sufficiently injected onto the substrate 1010, physical adsorption that is physically coupled onto the substrate 1010 by supplying a purge gas to the gas supply unit 1212 in the second step of the atomic layer deposition process.
  • the bond with the substrate 1010 is separated by the purge gas to be exhausted through the gas exhaust unit 1211 to obtain a single molecular layer of the precursor precursor.
  • the raw material precursor when the raw material precursor is injected onto the substrate 1010, the raw material precursor is chemically or physically adsorbed onto the surface of the substrate 1010 to form a thin film. In this state, the inert purge gas is transferred to the substrate 1010.
  • the precursor precursor of the physical adsorption layer which has a relatively weak bonding force, is separated from the substrate 1010 and exhausted, but is chemically bonded to the substrate 1010 through covalent bonding to provide a relatively strong bonding force compared to the physical adsorption layer.
  • the raw material precursor of the chemisorption layer is not separated.
  • the reaction precursor is supplied through the gas supply unit 1212 to inject the reaction precursor onto the substrate 1010.
  • the reaction precursor sprayed on the substrate 1010 reacts with the raw material precursor adsorbed on the substrate 1010 to form an atomic layer thin film.
  • the purge gas is supplied through the gas supply unit 1212 to supply excess gas on the substrate 1010. Remove precursor or physisorption molecules.
  • the atomic layer thin film is formed on the substrate 1010 by a desired thickness through an iterative process using the above four-step atomic layer deposition process as one cycle.
  • the gas supply unit 1212 is formed on one side of the process chamber 1200, and the process gas is described by way of example, which is injected by the cross flow or moving wave method on the substrate.
  • the gas supply unit 1212 may be formed in a shower head type on the upper process chamber 1210 so that the precursor is sprayed perpendicularly to the surface of the substrate 1010.
  • an electrode 1313 for forming plasma is disposed in the center of the upper process chamber 1210, and an insulator 1314 is formed between the electrode 1313 and the upper process chamber 1210 to form the upper process chamber 1210.
  • the structure which prevents a short between the electrodes 1313 is shown.
  • the raw material precursor is supplied to the gas supply unit 1212 and uniformly supplied to one side of the substrate 1010, and thus the upper layer of the substrate 1010 seated in the lower process chamber 1220. At this point, adsorption reaction occurs.
  • the purge gas is supplied to the gas supply part 1212 to discharge the raw material precursor remaining on the substrate 1010 to the gas exhaust part 1211.
  • the reaction precursor is supplied to the gas supply unit 1212 and sprayed onto the substrate, and then, power is supplied to the electrode 1313 to generate a plasma 1030 directly onto the substrate 1010 to generate a plasma 1030.
  • the atomic layer thin film is formed through the chemical reaction between the raw material precursor and the reaction precursor by.
  • the plasma 1030 is supplied when the raw material precursor on the substrate 1010 is completely removed by supplying a purge gas including the reaction precursor. May be formed to form a film.
  • a structure in which the gas supply unit 1212 has a separate electrode 1313 and the insulator 1314 may be configured.
  • a raw material precursor, a reaction precursor, and a purge gas are sequentially disposed in an order of the atomic layer deposition process through the gas supply unit 1212 to the substrate 1010 located inside the process chamber 1200 outside the upper process chamber 1210.
  • the gas supply unit 1211 may be configured to supply a process gas or purge gas used in each process through the gas exhaust unit 1211 formed at the center of the upper process chamber 1210.
  • the process proceeds while the gas supply unit 1212 and the gas exhaust unit 1211 are shared with the substrate or the blank mask 1050 which can be periodically replaced by the robot while minimizing contamination of the upper process chamber 1210. It is possible.
  • the raw material precursor, the reaction precursor, and the purge gas are transferred to the substrate 1010 located in the process chamber 1200 through the shower head diffuser 1312 formed at the center of the upper process chamber 1210.
  • the gas exhaust unit 1211 formed on both sides of the upper process chamber 1210 may be configured to exhaust the process gas or purge gas used in each process. .
  • the exhaust region adjacent to the substrate 1010 may be composed of both ends or the entire four sides of the substrate 1010, and improves the uniformity of flow such as a corrugated shape, a wavy shape, a hole diffuser, and a slit diffuser in a predetermined region of the exhaust path.
  • the exhaust entry portion may be disposed as close as possible to the substrate 1010 to minimize contamination of unnecessary areas other than the substrate 1010 requiring film formation.
  • a gap insulator between the electrode 1413 and the showerhead diffuser 1312 in addition to the insulator 1314 may be used to prevent the risk of damage to the lower layer.
  • 1414 may be further configured to generate a plasma 1030 only between the electrode 1413 and the diffuser 1312 to supply radicals through dissociation of the reaction precursor, thereby not damaging the substrate 1010. It can be configured to be formed.
  • FIG. 7 is a cross-sectional structure of a process chamber 1200 according to another embodiment of the present invention.
  • the upper process chamber 1210 is applied to the large area substrate 1010.
  • At least two regions may be divided to perform an atomic layer deposition process for each region, and the raw material precursor, the reaction precursor, and the purge gas may be sequentially disposed on the substrate 1010 for each region in the order of the atomic layer deposition process.
  • the structure to supply is shown.
  • each atomic layer deposition process unit 1340 has a gas supply unit 1312 for supplying a process gas to the substrate 1010 in each region, the process gas or purge gas used in each process on the outer periphery
  • the structure which has the gas exhaust part 1311 for exhausting the gas is shown.
  • the shower head-type diffuser, the central hole diffuser, the slit-type diffuser, etc. to form a uniform gas flow as possible, and the process proceeds using a direct plasma or an indirect plasma generated by supplying power to each diffuser.
  • a purge gas supply unit 1412 for additionally supplying purge gas to the boundary position may be provided to form a closed loop in connection with the gas exhaust unit 1311, so that the boundary between each divided region may be more clearly realized.
  • the shower head type diffuser and the center hole diffuser may be configured.
  • FIG. 8 is a detailed cross-sectional structure of a process chamber 1200 according to an exemplary embodiment of the present invention, and a schematic configuration for controlling a deposition region of a substrate 1010 and a driving gas 1415 is used without applying a mask 1020.
  • the schematic configuration for adjusting the height of the gap between the upper process chamber 1200 and the lower process chamber 1220, and the schematic configuration for implementing the removable electrode (1313) is shown.
  • a gas supply unit 1312 for supplying a process gas onto the substrate 1010 and a purge gas supply unit 1412 on the other side thereof, and a gas exhaust unit 1311 for exhausting the process gas and the purge gas in the center thereof.
  • the deposition material 1 is deposited, and the deposition material 2 is deposited in another process module or another process device and then reloaded. Expandable deposition is possible to completely cover the outer side of the film forming portion, thereby completely sealing each layer of the deposition material.
  • the basic sealing part 1221 is configured with a device part 1416 capable of adjusting the displacement according to the pressure having a membrane-like function, thereby easily increasing the height of the gap between the upper process chamber 1210 and the lower process chamber 1220. It can be adjusted to enable various process applications.
  • the detachable device part 1315 of the electrode 1313 formed in the upper process chamber 1210 is configured to easily carry the electrode 1313 into the substrate using a vertical transfer robot or a lower process chamber 1220. And since it is possible to carry out, a separate maintenance time for cleaning after a long process can be omitted, thereby increasing productivity.
  • a plurality of unit process chambers for the atomic layer deposition process capable of separating and combining the upper and lower portions are arranged in a stacked form, and the plurality of process chambers arranged in the stacked form.

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  • Physics & Mathematics (AREA)
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  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
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  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne une pluralité de modules de traitement, chacun ayant une chambre de traitement et une chambre à vide en tant qu'unité de base, qui sont disposés en empilement, la chambre de traitement comportant des chambres de traitement supérieure et inférieure qui peuvent être séparées l'une de l'autre et couplées l'une à l'autre et la chambre à vide est disposée séparément à l'extérieur de la chambre de traitement afin de former un vide et d'ajuster la pression. En outre, la chambre de traitement et la chambre à vide de chaque module de traitement unitaire sont mises en œuvre pour avoir un espace minimum dans lequel un traitement optimal peut être effectué et des traitements de dépôt de couche atomique peuvent être effectués simultanément dans les chambres de traitement de la pluralité de modules de traitement. Par conséquent, la quantité de précurseurs de réactif et de source utilisés peut être réduite et un temps de traitement peut être minimisé, ce qui permet de réaliser une réduction des coûts et une amélioration de la productivité et un traitement ou un entretien peuvent être effectués indépendamment pour chaque module de traitement, ce qui permet d'augmenter facilement l'extensibilité du fonctionnement de l'appareil. En outre, un substrat ou un masque soumis à un dépôt de couche atomique est amené à proximité de la chambre de traitement supérieure ou inférieure au sein de la chambre de traitement optimisée, ce qui empêche un film de se former sur le côté arrière du substrat et forme simultanément des films sur deux substrats.
PCT/KR2015/002783 2014-03-21 2015-03-21 Appareil de dépôt multi-type et procédé de formation de film mince l'utilisant WO2015142131A1 (fr)

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KR1020140033058A KR101634694B1 (ko) 2014-03-21 2014-03-21 멀티형 증착 장치 및 방법

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